Film-like adhesive for semiconductors, adhesive tape, semiconductor device, and production method for same

Abstract

Disclosed is a film-like adhesive for semiconductors that comprises a thermosetting resin, a curing agent, a thermoplastic resin, and a filler. The thermosetting resin contains an epoxy resin that is solid at 25°C. The total content of the epoxy resin that is solid at 25°C and the thermoplastic resin is not less than 40 mass% with respect to the entire amount of the film-like adhesive for semiconductors. The mass ratio of content of the epoxy resin that is solid at 25°C to the content of the thermoplastic resin is not less than 3.0.

Description

Film-type adhesive for semiconductors, adhesive tape, semiconductor device, and method for manufacturing the same.

[0001] This disclosure relates to film-type adhesives for semiconductors, adhesive tapes, semiconductor devices, and methods for manufacturing the same.

[0002] Traditionally, wire bonding, which uses thin metal wires such as gold wires, has been widely applied to connect semiconductor chips and substrates. On the other hand, in order to meet the demands for higher functionality, higher integration, and higher speed for semiconductor devices, the flip-chip connection method (FC connection method), which directly connects the semiconductor chip and substrate by forming conductive protrusions called bumps on the semiconductor chip or substrate, is becoming widespread.

[0003] For example, regarding the connection between semiconductor chips and substrates, the COB (Chip On Board) connection method, which is widely used in BGA (Ball Grid Array) and CSP (Chip Size Package), also falls under the category of FC connection methods. Furthermore, FC connection methods are also widely used in COC (Chip On Chip) connection methods, which connect semiconductor chips by forming connection parts (e.g., bumps and wiring) on ​​the semiconductor chip.

[0004] Furthermore, in packages where further miniaturization, thinning, and enhanced functionality are strongly demanded, chip stack packages, POP (Package On Package), and TSV (Through-Silicone Via), which stack chips in multiple layers using the aforementioned connection methods, are beginning to become widely adopted. Such stacking and multi-layering technologies allow for smaller packages compared to two-dimensional arrangement methods because semiconductor chips are arranged three-dimensionally. In addition, they are effective in improving semiconductor performance, reducing noise, reducing mounting area, and saving power, and are attracting attention as next-generation semiconductor wiring technologies.

[0005] Film-type adhesives are sometimes used to connect connecting members, such as connecting semiconductor chips to substrates or connecting semiconductor chips to each other (see, for example, Patent Document 1).

[0006] Japanese Patent Publication No. 2008-294382

[0007] Incidentally, when stacking semiconductor chips in multiple layers using film adhesives, differences in thermal history between the top and bottom layers can cause defects such as substrate warping. From the perspective of suppressing such defects, there is a need for further reduction in viscosity of film adhesives used in such applications. On the other hand, from the perspective of heat dissipation, it is necessary to suppress fluctuations in the amount of fillet (adhesive component of the film adhesive that protrudes between the semiconductor chip and the substrate, or between semiconductor chips themselves) originating from the film adhesive.

[0008] Therefore, the main objective of this disclosure is to provide a film-type adhesive for semiconductors that has a sufficiently low minimum melt viscosity and can suppress fluctuations in the amount of fillet generated.

[0009] The present inventors investigated various methods to reduce the minimum melt viscosity in semiconductor film adhesives. They found that while many methods (such as increasing the particle size of fillers and changing the type of flux (e.g., applying fluxes with different PKas)) were able to reduce the minimum melt viscosity, the physical properties of the semiconductor film adhesive changed significantly, and consequently, the amount of fillet generated also tended to fluctuate greatly. Furthermore, they found that in semiconductor film adhesives where the amount of fillet generated fluctuated greatly, the temperature at which the minimum melt viscosity is observed (melting temperature) also fluctuated greatly. The present inventors conducted further investigations focusing on the melting temperature and found that by changing the content of predetermined components in the constituent components of the semiconductor film adhesive, it is possible to sufficiently reduce the minimum melt viscosity, and the melt viscosity does not fluctuate greatly. As a result, it is possible to suppress fluctuations in the amount of fillet generated. This led to the completion of the present invention.

[0010] This disclosure provides semiconductor film adhesives as described in [1] to [6], adhesive tape as described in [7], a method for manufacturing a semiconductor device as described in [8], and a semiconductor device as described in [9]. [1] A semiconductor film adhesive comprising a thermosetting resin, a curing agent, a thermoplastic resin, and a filler, wherein the thermosetting resin comprises an epoxy resin that is solid at 25°C, the total content of the epoxy resin that is solid at 25°C and the thermoplastic resin is 40% by mass or more based on the total amount of the semiconductor film adhesive, and the mass ratio of the content of the epoxy resin that is solid at 25°C to the content of the thermoplastic resin is 3.0 or more. [2] The semiconductor film adhesive according to [1], wherein the thermosetting resin comprises an epoxy resin that is liquid at 25°C. [3] The semiconductor film adhesive according to [1] or [2], wherein the filler comprises an inorganic filler and an organic filler. [4] The semiconductor film adhesive according to any one of [1] to [3], further comprising a flux compound. [5] A non-conductive film-like adhesive for semiconductors according to any one of [1] to [4]. [6] A film-like adhesive for semiconductors according to any one of [1] to [5] used to bond a semiconductor chip to a substrate and to seal the gap between the semiconductor chip and the substrate. [7] An adhesive tape comprising: a film-like adhesive for semiconductors according to any one of [1] to [6]; and an adhesive tape provided on the film-like adhesive for semiconductors. [8] A method for manufacturing a semiconductor device, comprising: a step of preparing a semiconductor chip with a film-like adhesive, comprising a semiconductor chip and a film-like adhesive for semiconductors according to any one of [1] to [6] provided on the semiconductor chip; and a step of placing the semiconductor chip with the film-like adhesive on a substrate from the film-like adhesive side and heating it to electrically connect the connection portion of the semiconductor chip to the connection portion of the substrate and to seal the gap between the semiconductor chip and the substrate.[9] A semiconductor device comprising: a semiconductor chip having a first connection portion; a substrate having a second connection portion electrically connected to the first connection portion; and a sealing portion that joins the semiconductor chip and the substrate and fills the gap between the semiconductor chip and the substrate, wherein the sealing portion is a cured product of a semiconductor film adhesive described in any of [1] to [6].

[0011] This disclosure provides a semiconductor film adhesive that has a sufficiently low minimum melt viscosity and can suppress fluctuations in the amount of fillet generated. Furthermore, this disclosure provides an adhesive tape, a method for manufacturing a semiconductor device, and a semiconductor device using such a semiconductor film adhesive.

[0012] Figure 1 is a schematic cross-sectional view showing one embodiment of the semiconductor film adhesive of the present disclosure. Figure 2(a) is a schematic cross-sectional view showing one embodiment of the semiconductor device of the present disclosure, and Figure 2(b) is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present disclosure. Figure 3 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present disclosure. Figures 4(a) and 4(b) are schematic process cross-sectional views showing one embodiment of the method for manufacturing the semiconductor device of the present disclosure. Figures 5(a) and 5(b) are schematic process cross-sectional views showing the process following Figures 4(a) and 4(b). Figures 6(a) and 6(b) are schematic process cross-sectional views showing the process following Figures 5(a) and 5(b). Figure 7 is a schematic process cross-sectional view showing the process following Figures 6(a) and 6(b). Figures 8(a) and 8(b) are schematic process cross-sectional views showing the process following Figure 7.

[0013] In this specification, "(meth)acrylic" means at least one of acrylic and its corresponding methacrylic. The same applies to other similar expressions such as "(meth)acryloyl" and "(meth)acrylate." Furthermore, numerical ranges indicated using "~" indicate a range that includes the numbers before and after "~" as the minimum and maximum values, respectively. In addition, in numerical ranges described herein, the upper or lower limits of the numerical range may be replaced with the values ​​shown in the examples. Furthermore, the upper and lower limits described individually can be combined in any way. In addition, unless otherwise specified, the materials exemplified below may be used individually or in combination of two or more. The content of each component in the composition means the total amount of the multiple substances present in the composition if there are multiple substances corresponding to each component in the composition, unless otherwise specified.

[0014] The embodiments of this disclosure will be described in detail below, with reference to the drawings as appropriate. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant explanations are omitted. Furthermore, unless otherwise specified, positional relationships such as top, bottom, left, and right are based on the positional relationships shown in the drawings. Moreover, the dimensional ratios in the drawings are not limited to those shown.

[0015] <Film-type adhesive for semiconductors> One embodiment of a film-type adhesive for semiconductors (hereinafter sometimes simply referred to as "film-type adhesive") is an adhesive used for connecting (joining) and sealing connecting members such as semiconductor chips, and is suitably used to join a semiconductor chip to a substrate and to seal the gap between the semiconductor chip and the substrate.

[0016] Figure 1 is a schematic cross-sectional view showing a film-like adhesive according to one embodiment. The film-like adhesive 1 shown in Figure 1 contains a thermosetting resin (hereinafter sometimes referred to as "component (A)"), a curing agent (hereinafter sometimes referred to as "component (B)"), a thermoplastic resin (hereinafter sometimes referred to as "component (C)"), and a filler (hereinafter sometimes referred to as "component (D)"). The film-like adhesive 1 may further contain a flux compound (hereinafter sometimes referred to as "component (E)").

[0017] (A) Component: Thermosetting resin Component (A) is a component that hardens by forming three-dimensional bonds between molecules when heated, etc., and exhibits adhesive properties after hardening. Component (A) may be an epoxy resin. Component (A) can be used without particular limitations as long as it has epoxy groups in its molecule. Component (A) may be a compound having two or more epoxy groups in its molecule.

[0018] Component (A) contains an epoxy resin that is solid at 25°C (hereinafter sometimes referred to as "component (A1)"). The inclusion of component (A1) in component (A) tends to result in a film-like adhesive with a sufficiently low minimum melt viscosity, and furthermore, it tends to suppress variations in the amount of fillet generated while suppressing variations in the melt temperature due to variations in component (A1). Here, "solid at 25°C" means that the viscosity at 25°C, as measured by an E-type viscometer, is greater than 400 Pa·s.

[0019] Examples of component (A1) include bisphenol A type epoxy resin, bisphenol F type epoxy resin, naphthalene type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, phenol aralkyl type epoxy resin, biphenyl type epoxy resin, triphenylmethane type epoxy resin, triphenolmethane type epoxy resin, dicyclopentadiene type epoxy resin, and various polyfunctional epoxy resins. Component (A1) may also contain triphenolmethane type epoxy resin (triphenolmethane skeleton-containing epoxy resin) from the viewpoint of suppressing fluctuations in fillet generation.

[0020] The epoxy equivalent of component (A1) may be 50 to 500 g / eq, or 100 to 400 g / eq or 120 to 370 g / eq.

[0021] Component (A) may contain an epoxy resin that is liquid at 25°C (hereinafter sometimes referred to as "component (A2)"). The inclusion of component (A2) in component (A) tends to suppress the occurrence of cracks and fissures on the film surface. Here, "liquid at 25°C" means that the viscosity at 25°C, as measured by an E-type viscometer, is 400 Pa·s or less.

[0022] (A2) Examples of components include bisphenol A type glycidyl ether, bisphenol AD ​​type glycidyl ether, bisphenol S type glycidyl ether, bisphenol F type glycidyl ether, water-added bisphenol A type glycidyl ether, ethylene oxide adduct bisphenol A type glycidyl ether, propylene oxide adduct bisphenol A type glycidyl ether, naphthalene resin glycidyl ether, trifunctional or tetrafunctional glycidylamines, etc.

[0023] (A2) The epoxy equivalent of component may be 100 to 3000 g / eq, or 100 to 2000 g / eq or 100 to 1500 g / eq.

[0024] (A) The content of component (A) may be 30% by mass or more, 35% by mass or more, 40% by mass or more, 42% by mass or more, or 45% by mass or more, based on the total amount of the film-like adhesive, from the viewpoint of suppressing fluctuations in the amount of fillet formation. (A) The content of component (A) may be 65% by mass or less, 60% by mass or less, 55% by mass or less, or 50% by mass or less, based on the total amount of the film-like adhesive, from the viewpoint of making it easier to obtain good sealing properties and making it easier to suppress the formation of voids.

[0025] (A1) The content of component (A1) may be 25% by mass or more, 30% by mass or more, 33% by mass or more, 36% by mass or more, or 39% by mass or more, based on the total amount of the film-like adhesive, from the viewpoint of suppressing fluctuations in the amount of fillet formation. (A1) The content of component (A1) may be 55% by mass or less, 50% by mass or less, 48% by mass or less, or 45% by mass or less, based on the total amount of the film-like adhesive, from the viewpoint of making it easier to obtain good sealing properties and making it easier to suppress the formation of voids.

[0026] The mass ratio of the content of component (A1) to the content of component (A) (content of component (A1) / content of component (A)) may be 0.70 or more, 0.75 or more, 0.80 or more, or 0.85 or more, from the viewpoint of suppressing fluctuations in the amount of fillet generated. The mass ratio of the content of component (A1) to the content of component (A) may be 1.00 or less, 0.98 or less, 0.95 or less, 0.92 or less, or 0.90 or less, from the viewpoint of making it easier to obtain good sealing properties and making it easier to suppress the generation of voids.

[0027] The mass ratio of the content of component (A2) to the content of component (A) (content of component (A2) / content of component (A)) may be 0 or more, 0.02 or more, 0.05 or more, 0.08 or more, or 0.10 or more, and may be 0.30 or less, 0.25 or less, 0.20 or less, or 0.15 or less.

[0028] (B) Component: Curing agent Examples of (B) component include phenol resin curing agents, acid anhydride curing agents, amine curing agents, imidazole curing agents, and phosphine curing agents. Among these, phenol resin curing agents, acid anhydride curing agents, amine curing agents, and imidazole curing agents exhibit flux activity that suppresses the formation of oxide films at the connection site, and by using these curing agents, connection reliability can be improved.

[0029] The phenolic resin curing agent is not particularly limited as long as it has two or more phenolic hydroxyl groups in its molecule. Examples of phenolic resin curing agents include phenol novolac resins, cresol novolac resins, phenol aralkyl resins, cresol naphthol formaldehyde polycondensates, triphenylmethane-type polyfunctional phenolic resins, and various polyfunctional phenolic resins.

[0030] Examples of acid anhydride-based curing agents include methylcyclohexanetetracarboxylic acid dianhydride, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic acid dianhydride, and ethylene glycol bisanhydrotrimellitate.

[0031] Examples of amine-based curing agents include dicyandiamide.

[0032] Examples of imidazole-based curing agents include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, and 2,4-diamino-6 Examples include -[2'-undecylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanurate adduct, 2-phenylimidazole isocyanurate adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, and adducts of epoxy resins and imidazoles. Among these, imidazole-based curing agents are selected from the viewpoint of excellent curing properties, storage stability, and connection reliability, including 1-cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, and 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine. These may be 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanurate adduct, 2-phenylimidazole isocyanurate adduct, 2-phenyl-4,5-dihydroxymethylimidazole, or 2-phenyl-4-methyl-5-hydroxymethylimidazole. These imidazole-based curing agents may be microencapsulated and used as latent curing agents.

[0033] Examples of phosphine-based curing agents include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra(4-methylphenyl)borate, and tetraphenylphosphonium (4-fluorophenyl)borate.

[0034] (B) Component (B) may contain at least one selected from the group consisting of phenolic resin curing agents, amine curing agents, imidazole curing agents, and phosphine curing agents, from the viewpoint of further improving storage stability and making it less susceptible to decomposition or deterioration due to moisture absorption, and may contain an imidazole curing agent.

[0035] The content of component (B) may be 0.1 to 20 parts by mass, 0.1 to 10 parts by mass, or 0.1 to 5 parts by mass per 100 parts by mass of component (A). When the content of the curing agent is 0.1 parts by mass or more per 100 parts by mass of component (A), the curability tends to improve, and when it is 20 parts by mass or less, the film-like adhesive does not harden before the metal bond is formed, and connection failures tend to occur less easily.

[0036] (C) Component: Thermoplastic resin Component (C) is a polymer that softens at high temperatures and is a component that contributes to improved heat resistance and film formation properties.

[0037] Examples of component (C) include phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, acrylic resin, polyester resin, polyethylene resin, polyethersulfone resin, polyetherimide resin, polyvinyl acetal resin, urethane resin, and acrylic rubber. Among these, component (C) may contain phenoxy resin, polyimide resin, acrylic rubber, cyanate ester resin, or polycarbodiimide resin, or it may contain phenoxy resin, polyimide resin, or acrylic rubber, from the viewpoint of easily obtaining excellent heat resistance and film formation properties.

[0038] The weight-average molecular weight of component (C) is, for example, 10,000 or more, and may be 20,000 or more or 30,000 or more. According to such a thermoplastic resin, the heat resistance and film-forming property of the film-like adhesive can be further improved. The weight-average molecular weight of component (C) may be 1,000,000 or less, and may be 500,000 or less, from the viewpoint that the effect of improving heat resistance is easily obtained. In this specification, the weight-average molecular weight means the weight-average molecular weight measured in terms of polystyrene using high-performance liquid chromatography (manufactured by Shimadzu Corporation, trade name: C-R4A). For the measurement, for example, the following conditions can be used. Detector: LV4000 UV Detector (manufactured by Hitachi, Ltd., trade name) Pump: L6000 Pump (manufactured by Hitachi, Ltd., trade name) Column: Gelpack GL-S300MDT-5 (total 2) (manufactured by Resonac Co., Ltd., trade name) Eluent: THF / DMF = 1 / 1 (volume ratio) + LiBr (0.03 mol / L) + H3PO4 (0.06 mol / L) Flow rate: 1 mL / min

[0039] The glass transition temperature (Tg) of component (C) may be 120°C or less, 100°C or less, or 85°C or less, from the viewpoint of excellent adhesiveness of the film-like adhesive to a connecting member (for example, a semiconductor chip). Here, Tg means the Tg measured under the conditions of a sample amount of 10 mg, a heating rate of 10°C / min, and a measurement atmosphere of air using DSC (for example, manufactured by PerkinElmer, trade name: DSC-7 type).

[0040] The content of component (C) may be 1% by mass or more, 2% by mass or more, 3% by mass or more, 4% by mass or more, or 5% by mass or more, based on the total amount of the film-like adhesive, from the viewpoint that heat resistance and film-forming property are easily improved. The content of component (C) may be 20% by mass or less, 15% by mass or less, 12% by mass or less, 10% by mass or less, or 9% by mass or less, based on the total amount of the film-like adhesive, from the viewpoint of suppressing fluctuations in the amount of fillet generation.

[0041] The total content of the (A1) component and the (C) component is 40% by mass or more based on the total amount of the film-like adhesive. When the total content of the (A1) component and the (C) component is 40% by mass or more based on the total amount of the film-like adhesive, the film-like adhesive has a sufficiently low minimum melt viscosity and tends to be able to suppress fluctuations in the amount of fillet generation. The total content of the (A1) component and the (C) component may be 42% by mass or more, 45% by mass or more, or 48% by mass or more based on the total amount of the film-like adhesive. The total content of the (A1) component and the (C) component may be 70% by mass or less, 60% by mass or less, or 55% by mass or less based on the total amount of the film-like adhesive.

[0042] The mass ratio of the content of the (A1) component to the content of the (C) component ((content of the (A1) component / content of the (C) component)) is 3.0 or more. When the mass ratio of the content of the (A1) component to the content of the (C) component is 3.0 or more, the film-like adhesive has a sufficiently low minimum melt viscosity and tends to be able to suppress fluctuations in the amount of fillet generation. The mass ratio of the content of the (A1) component to the content of the (C) component may be 3.2 or more, 3.5 or more, 3.8 or more, 4.0 or more, 4.2 or more, or 4.5 or more. The mass ratio of the content of the (A1) component to the content of the (C) component may be 20 or less, 18 or less, 16 or less, 14 or less, 12 or less, 10 or less, or 8 or less from the viewpoint of suppressing fluctuations in the amount of fillet generation.

[0043] (D) component: Filler (filling agent) The (D) component is a component that acts on the control of viscosity, physical properties, etc. More specifically, by using the (D) component, it is possible to suppress the generation of voids during connection and reduce the moisture absorption rate of the cured product. The filler may be an inorganic filler (inorganic particles, hereinafter sometimes referred to as the "(D1) component"), an organic filler (organic particles, hereinafter sometimes referred to as the "(D2) component"), or may contain both the (D1) component and the (D2) component.

[0044] (D1) Component may include insulating inorganic fillers such as glass, silica, alumina, titanium oxide, mica, and boron nitride. Among these, at least one selected from the group consisting of silica, alumina, titanium oxide, and boron nitride may be included, or at least one selected from the group consisting of silica, alumina, and boron nitride may be included.

[0045] Component (D2) may include, for example, resin fillers (resin particles). Examples of resin fillers include polyurethane and polyimide. Resin fillers can provide flexibility at high temperatures such as 260°C. Note that organic fillers composed of thermoplastic resins are not included in component (C).

[0046] Component (D) may exhibit insulating properties from the viewpoint of even greater insulation reliability. The film adhesive may not contain a filler (conductive filler) containing conductive materials such as silver, solder, or carbon black.

[0047] The physical properties of component (D) can be adjusted as appropriate by surface treatment. Component (D) may be a filler that has been surface treated to improve dispersibility or adhesion. Examples of surface treatment agents include glycidyl (epoxy), amine, phenyl, phenylamino, (meth)acrylic, and vinyl compounds.

[0048] The average particle size of component (D) may be, for example, 0.01 to 1.5 μm. The average particle size of component (D) may be 1.5 μm or less from the viewpoint of preventing jamming during flip-chip connection, and may be 1.0 μm or less from the viewpoint of excellent visibility (transparency). The average particle size of component (D) may be, for example, 0.1 μm or more. The average particle size of component (D) is the particle size at the point corresponding to 50% of the volume when the cumulative frequency distribution curve by particle size is calculated with the total volume of the particles set to 100%, and can be measured with a particle size distribution analyzer using laser diffraction scattering or the like.

[0049] The content of component (D) may be 30% by mass or more, 35% by mass or more, or 40% by mass or more, based on the total amount of the film adhesive, from the viewpoint of suppressing a decrease in heat dissipation and from the viewpoint of easily suppressing the generation of voids and an increase in moisture absorption rate. The content of the filler may be 60% by mass or less, 55% by mass or less, or 50% by mass or less, based on the total amount of the film adhesive, from the viewpoint of suppressing the trapping of the filler into the connection part.

[0050] If component (D) contains component (D1) and component (D2), the mass ratio of the content of component (D1) to the content of component (D) (content of component (D1) / content of component (D)) may be 0.60 or more, 0.70 or more, or 0.80 or more, and may be 0.98 or less, 0.95 or less, or 0.90 or less.

[0051] If component (D) contains component (D1) and component (D2), the mass ratio of the content of component (D2) to the content of component (D) (content of component (D2) / content of component (D)) may be 0.02 or more, 0.05 or more, or 0.10 or more, and may be 0.40 or less, 0.30 or less, or 0.20 or less.

[0052] (E) Component: Flux compound Component (E) is a compound having flux activity. Component (E) can be any known compound without particular limitations, as long as it reduces and removes the oxide film on the surface of solder, etc., to facilitate metal bonding.

[0053] Component (E) may be a compound having a carboxyl group (carboxylic acid), or a polycarboxylic acid having two or more carboxyl groups, from the viewpoint of obtaining sufficient flux activity and superior connection reliability. The number of carboxyl groups in the polycarboxylic acid may be two. Polycarboxylic acids tend to be less volatile at high temperatures during connection compared to compounds having one carboxyl group (monocarboxylic acids). Therefore, polycarboxylic acids can further suppress the generation of voids. Furthermore, among polycarboxylic acids, compounds having two carboxyl groups are superior to compounds having three or more carboxyl groups in terms of suppressing the increase in viscosity of the film-like adhesive during storage and connection work.

[0054] Component (E) may be a compound having a group represented by formula (1).

[0055]

[0056] In formula (1), R １ This indicates a hydrogen atom or an electron-donating group.

[0057] R １ It may be electron-donating from the viewpoint of having excellent reflow resistance and even better connection reliability.

[0058] Examples of electron-donating groups include alkyl groups, hydroxyl groups, amino groups, alkoxy groups, and alkylamino groups. The electron-donating group may be a group that does not readily react with other components (for example, component (A)), and more specifically, it may be an alkyl group, a hydroxyl group, or an alkoxy group, and may be an alkyl group.

[0059] Alkyl groups may be linear or branched, but linear is preferable. Alkyl groups may have 1 to 10 carbon atoms, or 1 to 5 carbon atoms. The more carbon atoms an alkyl group has, the greater its electron-donating and steric hindrance tends to be. Alkyl groups with a carbon number within this range offer an excellent balance between electron-donating and steric hindrance.

[0060] Examples of the flux compound having two carboxy groups include, for example, the compound represented by formula (2). According to the compound represented by formula (2), the reflow resistance and connection reliability of the semiconductor device can be further improved.

[0061]

[0062] In formula (2), R １ has the same meaning as R of formula (1). １ R ２ represents a hydrogen atom or an electron-donating group, and n represents an integer of 0 or 1 or more.

[0063] As the electron-donating property represented by R ２ , the same ones as the electron-donating groups exemplified as R １ are included. R ２ may be the same as or different from R １ . When there are a plurality of R ２ , they may be the same as or different from each other.

[0064] In formula (2), n may be 1 or more. When n is 1 or more, the flux compound is less likely to volatilize even at a high temperature during connection as compared with the case where n is 0, and the generation of voids can be further suppressed. In formula (2), n may be 15 or less, 11 or less, 6 or less, or 4 or less. When n is 15 or less, there is a tendency to obtain more excellent connection reliability.

[0065] Specific examples of such a flux compound having two carboxy groups include dicarboxylic acids such as succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, dodecanedioic acid; compounds in which an electron-donating group is substituted at the 2-position of these dicarboxylic acids (for example, 2-methylglutaric acid), and the like. Among these, the flux compound having two carboxy groups may be 2-methylglutaric acid from the viewpoint that the effects of reducing voids and improving the sealing property are further improved by the combination with the components (A) and (B).

[0066] The melting point of component (E) may be 150°C or lower, 140°C or lower, or 130°C or lower. Such component (E) tends to exhibit sufficient flux activity before the curing reaction between component (A) and component (B) occurs. Therefore, by using such a component (E), a semiconductor device with even better connection reliability can be obtained. Component (E) may be solid at room temperature (25°C). The melting point of the flux compound may be 25°C or higher, or 50°C or higher. In this specification, a melting point of 150°C or lower means that the upper limit of the melting point is 150°C or lower, and a melting point of 25°C or higher means that the lower limit of the melting point is 25°C or higher.

[0067] The content of component (E) may be 0.1% by mass or more, 0.3% by mass or more, or 0.5% by mass or more, based on the total amount of the film-like adhesive, from the viewpoint of obtaining a better flux effect. The content of component (E) may be 5% by mass or less, 3% by mass or less, or 2% by mass or less, based on the total amount of the film-like adhesive, from the viewpoint of reducing the amount of wafer warping when manufacturing semiconductor devices.

[0068] Other additives in film-type adhesives may further contain other additives such as antioxidants, silane coupling agents, titanium coupling agents, leveling agents, and ion trapping agents. The content of these additives can be adjusted as appropriate to ensure that the effects of each additive are realized.

[0069] The thickness of the film-like adhesive 1 may be, for example, 1 to 100 μm. The thickness of the film-like adhesive 1 may be 2 μm or more, 3 μm or more, or 4 μm or more, and may be 70 μm or less, 50 μm or less, 30 μm or less, 20 μm or less, or 10 μm or less.

[0070] The film-like adhesive 1 may be non-conductive. That is, the film-like adhesive 1 may be a so-called NCF (Non-Conductive Film).

[0071] The film-like adhesive 1 may be used as a multilayer film-like adhesive consisting of two or more layers by laminating it with other film-like adhesives.

[0072] The film-like adhesive 1 may be provided with a substrate such as a support film or protective film on one main surface and / or the other main surface. In this disclosure, as one embodiment, a laminate comprising a film-like adhesive and a substrate provided on the film-like adhesive is referred to as an "adhesive tape".

[0073] Examples of the base material include the same base material used in the method for manufacturing the film-like adhesive described later. The base material may be an adhesive tape comprising a base layer and an adhesive layer provided on the base layer, and the adhesive tape may be a backgrind tape. Examples of the base layer include the same base material used in the method for manufacturing the film-like adhesive described later. A preferred embodiment of the present disclosure is an adhesive tape (adhesive tape with adhesive tape) comprising a film-like adhesive and an adhesive tape provided on the film-like adhesive. The adhesive tape with adhesive tape may be an adhesive tape with a backgrind tape.

[0074] Adhesive tape (backgrind tape) is usually configured such that one main surface side is the adhesive layer. However, in adhesive tape, the adhesive tape (backgrind tape) is placed on the film-like adhesive 1 such that the film-like adhesive and the adhesive layer are in contact. The thickness of the base material (for example, the thickness of the adhesive tape (backgrind tape)) may be 20 to 300 μm.

[0075] The adhesive tape may be a laminate of a substrate and a film-like adhesive obtained by a method for manufacturing a film-like adhesive described later, that is, by applying a coating liquid to a substrate, forming a coating film, and drying it, or it may be a laminate obtained by attaching a substrate to the film-like adhesive 1 (for example, laminating the film-like adhesive 1 and the substrate).

[0076] When the substrate is an adhesive tape (backgrind tape), applying and drying the coating liquid on the adhesive layer of the adhesive tape (backgrind tape) may cause problems such as damage to the adhesive layer and migration of components between the adhesive and the bonding agent. Therefore, the adhesive tape may be manufactured by a method that includes the steps of preparing a film-like adhesive 1 and an adhesive tape (backgrind tape), and obtaining the adhesive tape by attaching the adhesive layer of the adhesive tape (backgrind tape) to the film-like adhesive 1.

[0077] <Method for Manufacturing Film-Like Adhesives for Semiconductors> Film-like adhesive 1 can be obtained by a method that includes the step of forming an adhesive layer (film-like adhesive) on a substrate (for example, a film-like substrate). When forming an adhesive layer on a substrate, for example, first, components (A), (B), (C), (D), and other components added as needed (component (E), other additives) are added to an organic solvent and dissolved or dispersed by stirring, mixing, kneading, etc. to prepare a coating solution. Then, the prepared coating solution is applied to a substrate that has been subjected to a release treatment using a knife coater, roll coater, applicator, etc. to form a coating film, and the organic solvent is reduced from the coating film by heating. This allows an adhesive layer (film-like adhesive) to be formed.

[0078] The organic solvent used in preparing the coating solution may have the property of uniformly dissolving or dispersing each component. Examples of effective solvents include dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, dimethyl sulfoxide, diethylene glycol dimethyl ether, toluene, benzene, xylene, methyl ethyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, cyclohexanone, and ethyl acetate. Stirring, mixing, and kneading during the preparation of the coating solution can be carried out using, for example, a stirrer, a sloshing machine, a three-roll mill, a ball mill, a bead mill, a homodisper, etc.

[0079] The substrate is not particularly limited as long as it has heat resistance that can withstand the heating conditions when volatilizing organic solvents. Examples of substrates include polyolefin films such as polypropylene film and polymethylpentene film; polyester films such as polyethylene terephthalate film and polyethylene naphthalate film; polyimide films; and polyetherimide films. The substrate is not limited to a single layer made of these films, but may also be a multilayer film made of two or more materials. The substrate may also be a film with a release treatment applied to its surface.

[0080] The drying conditions for volatilizing the organic solvent from the coating on the substrate are not particularly limited as long as the conditions allow for sufficient volatilization of the organic solvent. The heating temperature may be 50 to 200°C, and the heating time (holding time) may be 0.1 to 90 minutes. If there is no effect on voids or viscosity adjustment after mounting, the drying conditions may be such that the organic solvent is removed to 1.5% by mass or less based on the total amount of the film-like adhesive.

[0081] <Semiconductor Device> Next, a semiconductor device manufactured using the film adhesive of this embodiment will be described.

[0082] Figure 2 is a schematic cross-sectional view showing one embodiment of a semiconductor device. The semiconductor device 100 shown in Figure 2(a) includes a semiconductor chip 20 and a substrate 25 facing each other, wiring (first connection part and second connection part) 15 arranged on the opposing surfaces of the semiconductor chip 20 and the substrate 25, connection bumps 30 that connect the wiring 15 of the semiconductor chip 20 and the substrate 25 to each other, and a sealing part 40 made of a cured film-like adhesive that fills the gap between the semiconductor chip 20 and the substrate 25. The semiconductor chip 20 and the substrate 25 are flip-chip connected by the wiring 15 and the connection bumps 30. The wiring 15 and the connection bumps 30 are sealed by the cured adhesive and isolated from the external environment.

[0083] The semiconductor device 200 shown in Figure 2(b) comprises a semiconductor chip 20 and a substrate 25 facing each other, bumps (first connection portion and second connection portion) 32 arranged on the opposing surfaces of the semiconductor chip 20 and the substrate 25, and a sealing portion 40 made of a cured film-like adhesive that fills the gap between the semiconductor chip 20 and the substrate 25. The semiconductor chip 20 and the substrate 25 are connected via a flip-chip connection by the opposing bumps 32 being connected to each other. The bumps 32 are sealed by the sealing portion 40 made of a cured film-like adhesive and are isolated from the external environment.

[0084] Examples of semiconductor chips 20 include semiconductor chips made from elemental semiconductors composed of the same type of element, such as silicon and germanium, and semiconductor chips made from compound semiconductors, such as gallium arsenide and indium phosphide.

[0085] The substrate 25 is not particularly limited as long as it is used to mount the semiconductor chip 20. Examples of the substrate 25 include semiconductor chips, semiconductor wafers, wiring circuit boards, etc.

[0086] The semiconductor chip that can be used as the substrate 25 is the same as the semiconductor chip 20, and the same semiconductor chip as the semiconductor chip 20 can be used as the substrate 25.

[0087] The semiconductor wafer that can be used as the substrate 25 may, for example, have a configuration in which multiple semiconductor chips, as exemplified by the semiconductor chip 20, are linked together.

[0088] Examples of wiring circuit boards that can be used as the substrate 25 include circuit boards having wiring (wiring patterns) 15 formed by etching away unnecessary parts of a metal film on the surface of an insulating substrate mainly composed of glass epoxy, polyimide, polyester, ceramic, epoxy, bismaleimidotriazine, etc., circuit boards in which wiring 15 is formed on the surface of an insulating substrate by metal plating or the like, and circuit boards in which wiring 15 is formed by printing a conductive material on the surface of an insulating substrate.

[0089] The connection parts such as the wiring 15 and bumps 32 may contain gold, silver, copper, solder (the main components being, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper, etc.), nickel, tin, lead, etc., and may contain multiple metals.

[0090] The main metal component of the connection part may be gold, silver, or copper, or silver or copper, from the viewpoint of obtaining a package with excellent electrical and thermal conductivity of the connection part. The main metal component of the connection part may be silver, copper, or solder, which are inexpensive materials, or copper or solder, or solder, from the viewpoint of obtaining a package with reduced costs. The main metal component of the connection part may be gold, silver, copper, or solder, or gold, silver, or solder, or gold or silver, from the viewpoint of suppressing the formation of an oxide film on the surface of the metal at room temperature (25°C), as this can reduce productivity and increase costs.

[0091] On the surfaces of the wiring 15 and bump 32, a metal layer may be formed, for example by plating, with gold, silver, copper, solder (main components being, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, etc.), tin, nickel, etc. as the main components. This metal layer may consist of only a single component or multiple components. Furthermore, the metal layer may be a single-layer structure or a multi-layer structure in which multiple metal layers are laminated.

[0092] A semiconductor device may be a stack of multiple structures (packages) as shown in semiconductor devices 100 and 200. In this case, semiconductor devices 100 and 200 may be electrically connected to each other by bumps, wiring, etc., containing gold, silver, copper, solder (main components of which are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper, etc.), tin, nickel, etc.

[0093] As a method for stacking multiple semiconductor devices, as shown in Figure 3, one example is the TSV (Through-Silicone Via) technology. In the semiconductor device 500 shown in Figure 3, the semiconductor chip 20 and the interposer 50 are connected via a flip-chip connection by connecting the wiring 15 formed on the interposer 50 to the wiring 15 of the semiconductor chip 20 via connecting bumps 30. The gap between the semiconductor chip 20 and the interposer 50 is filled with a cured film-like adhesive, forming a sealing portion 40. On the surface of the semiconductor chip 20 opposite to the interposer 50, semiconductor chips 20 are repeatedly stacked via the wiring 15, connecting bumps 30, and sealing portion 40. The wiring 15 on the pattern surfaces on the front and back of the semiconductor chip 20 are connected to each other by through-electrodes 34 filled in holes that penetrate the inside of the semiconductor chip 20. The material of the through-electrodes 34 can be copper, aluminum, etc.

[0094] This TSV technology makes it possible to acquire signals from the back surface of semiconductor chips that are not normally used. Furthermore, because the through-electrode 34 is passed vertically through the semiconductor chip 20, the distance between opposing semiconductor chips 20 and between the semiconductor chip 20 and the interposer 50 is shortened, allowing for flexible connections. The film-like adhesive of this embodiment can be applied as a film-like adhesive between opposing semiconductor chips 20 and between the semiconductor chip 20 and the interposer 50 in this TSV technology.

[0095] Furthermore, with highly flexible bump formation methods such as area bump chip technology, semiconductor chips can be directly mounted to the motherboard without the need for an interposer. The film adhesive of this embodiment can also be applied when directly mounting such semiconductor chips to the motherboard. In addition, the film adhesive of this embodiment can also be applied when sealing gaps (air spaces) between two wiring circuit boards when they are laminated together.

[0096] <Method for Manufacturing Semiconductor Devices> Next, a method for manufacturing semiconductor devices using the film-like adhesive of this embodiment will be described.

[0097] A semiconductor device manufacturing method according to one embodiment includes the steps of: preparing a semiconductor chip with a film-like adhesive, which comprises a semiconductor chip and a film-like adhesive of this embodiment provided on the semiconductor chip; and placing the semiconductor chip with the film-like adhesive onto a substrate from the film-like adhesive side and heating it to electrically connect the connection portion of the semiconductor chip to the connection portion of the substrate and to seal the gap between the semiconductor chip and the substrate. The semiconductor device manufacturing method may further include the step of attaching the film-like adhesive of this embodiment to the connection surface of the semiconductor chip or its precursor. Here, the semiconductor chip precursor means a component that becomes a semiconductor chip through processing. A specific example of a semiconductor chip precursor is a semiconductor wafer. When a semiconductor wafer is used as the semiconductor chip precursor, the semiconductor device manufacturing method may further include the step of dicing the semiconductor wafer or the semiconductor wafer with the film-like adhesive.

[0098] In the method for manufacturing a semiconductor device, the adhesive tape with backgrind tape described above may be used. In this case, the method for manufacturing a semiconductor device may further include a lamination step in which the adhesive tape with backgrind tape is attached to the connection surface of a semiconductor wafer, which is a precursor of a semiconductor chip, from the film-like adhesive side, and a backgrind step in which the semiconductor wafer to which the adhesive tape is attached is ground from the side opposite to the adhesive tape.

[0099] The following section will provide a more detailed explanation of the manufacturing method for semiconductor devices, using a semiconductor chip precursor (semiconductor wafer) as an example.

[0100] Figures 4, 5, 6, 7, and 8 are schematic cross-sectional views illustrating one embodiment of a semiconductor device manufacturing method. The manufacturing method of one embodiment of a semiconductor device includes the following steps (a) to (e). Note that if a semiconductor wafer with a pre-adjusted thickness is used, step (b) may not be performed. Step (a): A step of preparing a laminate 6 comprising a semiconductor wafer A having a connecting portion (first connecting portion) 5 on one main surface (connecting surface) and a film-like adhesive 1 provided on the main surface of the semiconductor wafer A (see Figure 4). Step (b): A back-grinding step of grinding the side of the laminate 6 opposite to the side on which the film-like adhesive 1 is provided (the side opposite to the side on which the connecting portion 5 of the semiconductor wafer A is provided) (see Figure 5). Step (c): A step of separating the laminate 6 into individual pieces to obtain a semiconductor chip 8 with film-like adhesive having a connecting portion 5 (see Figure 6). Step (d): A step of picking up the semiconductor chip 8 with film-like adhesive from the side of the separated film-like adhesive 1a (see Figure 7). Step (e): The semiconductor chip 8 with film adhesive is placed on the main surface (connecting surface) of a substrate 9 having a connecting portion (second connecting portion) 10 on one of its main surfaces, starting from the side with the film adhesive 1a, and heated to electrically connect the connecting portion 5 of the semiconductor chip 8 with film adhesive to the connecting portion 10 of the substrate 9, and to seal the gap between the semiconductor chip 8 with film adhesive and the substrate 9 (see Figure 8).

[0101] (Step (a)) Step (a) may be a step of preparing a pre-fabricated laminate 6, or it may be a step of manufacturing the laminate 6. The laminate 6 may be manufactured, for example, by the following method.

[0102] First, an adhesive tape is prepared, in which a base material 4 is provided on a film-like adhesive 1, and this is placed in a predetermined apparatus (see Figure 4(a)). The base material 4 is, for example, a backgrind tape. Next, a semiconductor wafer A having a connection portion 5 (wiring, bump, etc.) on one main surface is prepared, and the film-like adhesive 1 is attached to the main surface of the semiconductor wafer A (the surface on which the connection portion 5 is provided, the connection surface). This results in a laminate 6 in which the semiconductor wafer A, the film-like adhesive 1, and the base material 4 are stacked in this order (see Figure 4(b)).

[0103] The film-like adhesive 1 can be applied by heat pressing, roll lamination, vacuum lamination, etc. The supply area and thickness of the film-like adhesive 1 are appropriately set according to the size of the semiconductor wafer and substrate, the height of the connection part, etc. In Figure 4, the thickness of the film-like adhesive 1 is greater than the height of the connection part 5 of the semiconductor wafer A, and the connection part 5 is covered with the film-like adhesive 1, but the thickness of the film-like adhesive 1 may be less than the height of the connection part 5.

[0104] (Step (b)) In step (b), for example, the semiconductor wafer A of the laminate 6 is ground using a grinder G (see Figures 5(a) and 5(b)). This thins the semiconductor wafer A. The thickness of the semiconductor wafer after grinding may be, for example, 10 to 300 μm. From the viewpoint of miniaturizing and thinning semiconductor devices, the thickness of the semiconductor wafer may be 20 to 100 μm.

[0105] (Step (c)) In step (c), for example, first, a dicing tape 7 is attached to the semiconductor wafer A side of the laminate 6, and this is placed in a predetermined apparatus (see Figure 6(a)). The substrate 4 may be peeled off before or after attaching the laminate 6 to the dicing tape 7. Next, the laminate 6 is diced with a dicing saw D. In this way, the laminate 6 is divided into individual pieces, and a semiconductor chip 8 with a film-like adhesive, which has a film-like adhesive 1a on the semiconductor chip A', is obtained (see Figure 6(b)). A connecting portion 5 is provided on the side of the semiconductor chip A' that has the film-like adhesive 1a.

[0106] (Step (d)) In step (d), for example, the dicing tape 7 is expanded to separate the film-adhesive-coated semiconductor chips 8 obtained by the dicing process, and the film-adhesive-coated semiconductor chips 8 that have been pushed up from the dicing tape 7 side by the needle N are picked up from the film-adhesive 1a side by the pick-up tool P (see Figure 7). The picked-up film-adhesive-coated semiconductor chips 8 are then passed to the bonding tool and used for bonding in step (e).

[0107] (Step (e)) In step (e), for example, first, a substrate 9 for mounting a semiconductor chip having a connection portion 10 (second connection portion) on one side is prepared, and the semiconductor chip 8 with film adhesive and the substrate 9 are aligned. Next, using a bonding tool, the semiconductor chip 8 with film adhesive is placed on the main surface of the substrate 9 where the connection portion 10 (wiring, bumps, etc.) is provided, from the film adhesive 1a side, and heated to bond the semiconductor chip 8 with film adhesive and the substrate 9 (see Figures 8(a) and 8(b)). As a result, the connection portion 5 of the semiconductor chip 8 with film adhesive and the connection portion 10 of the substrate 9 are electrically connected, and a sealing portion 1a' made of cured film adhesive 1a is formed between the semiconductor chip A' and the substrate 9, sealing the gap between the semiconductor chip 8 with film adhesive and the substrate 9, and a semiconductor device 11, which is a bonded body of the semiconductor chip 8 with film adhesive and the substrate 9, is obtained.

[0108] When a solder bump is used on either the connection part 5 or the connection part 10 (for example, when the connection part 5 or the connection part 10 is a wire with a solder bump), the connection part 5 and the connection part 10 are electrically and mechanically connected by soldering.

[0109] The heating in step (e) may be performed while the semiconductor chip is being placed, or after the semiconductor chip has been placed. The heating and placement in step (e) may be performed by thermocompression bonding. Step (e) may include a step of temporarily fixing the chip after alignment (temporary fixing step) and a step of joining the semiconductor chip A' and the substrate 9 and sealing the connection by melting the bumps (e.g., solder bumps) provided at the connection by heat treatment (sealing step). Since it is not necessarily required to form a metal bond at the temporary fixing stage, the temporary fixing step can be carried out with low load, short time, and low temperature. Therefore, when the temporary fixing step and the sealing step are carried out in step (e), productivity can be improved and deterioration of the connection can be suppressed.

[0110] The load applied for temporary fixing is set appropriately, taking into consideration the number of connection points (bumps), the absorption of variations in the height of the connection points (bumps), and the amount of deformation of the connection points (bumps). From the viewpoint of eliminating voids and facilitating contact between the connection points, the load may be, for example, 0.009 to 0.2 N per connection point (e.g., bump).

[0111] Heating during the sealing process may be performed using equipment capable of heating above the melting point of the metal at the connection point. The heating temperature may be the temperature at which the film adhesive begins to harden, or it may be the temperature at which it hardens completely. The heating temperature and heating time can be set as appropriate.

[0112] The heating time in the sealing process varies depending on the type of metal that makes up the connection, but from the viewpoint of improving productivity, it may be short. When solder bumps are used in the connection, the heating time may be 20 seconds or less, 10 seconds or less, or 5 seconds or less. In the case of copper-copper or copper-gold metal connections, the connection time may be 60 seconds or less.

[0113] In the sealing process, heating and pressurization may be performed simultaneously using a device capable of both heating and pressurization. That is, heating in the sealing process may be done by thermocompression bonding. In this case, the load (connecting load) is set considering the size of the connecting members, the number of connection points, variations in height, the amount of deformation of the connection points due to pressurization, etc. The connecting load may be, for example, above atmospheric pressure and 1 MPa or less. From the viewpoint of void suppression and improved connectability, the load may be 0.05 to 0.5 MPa. The crimping time (connecting time) varies depending on the type of metal constituting the connection point, but from the viewpoint of improving productivity, it may be short. If the connection point is a solder bump, the crimping time may be 20 seconds or less, 10 seconds or less, or 5 seconds or less. Note that with direct pressurization using a crimping machine, the heat from the crimping machine is not easily transferred to the fillet, so from the viewpoint of easily ensuring sufficient effect on the fillet, pressurization by air pressure may be used. From the viewpoint of batch sealing, pressurization during heating may also be pressurization by air pressure (pressurization by a pressurized reflow oven, pressurized oven, etc.).

[0114] After connecting the semiconductor chip A' and the substrate 9, the connection reliability may be further improved by performing a heat treatment in an oven or the like.

[0115] The present disclosure will be described in more detail below with reference to examples, but the present disclosure is not limited to these examples.

[0116] Examples 1-4 and Comparative Example 1 <Preparation of Film-like Adhesives> (Preparation of Materials) The following materials were prepared. (A) Components: Thermosetting resin (A1) Components: Epoxy resin that is solid at 25°C (A1-1) Triphenolmethane skeleton-containing polyfunctional solid epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name: jER1032H60, "jER" is a registered trademark (hereinafter the same), epoxy equivalent: 163-175 g / eq, softening point: 62°C) (A2) Components: Epoxy resin that is liquid at 25°C (A2-1) Bisphenol F type liquid epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name: jERYL983U, epoxy equivalent: 165-175 g / eq) (A2-2) Flexible epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name: jERYX7110B80, epoxy equivalent: 950-1250 g / eq) (B) Components: Curing agent (B-1) 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanurate adduct (manufactured by Shikoku Chemicals, Ltd., product name: 2MAOK-PW) (C) Component: Thermoplastic resin (C-1) Phenoxy resin (phenoxy resin, manufactured by Nippon Steel Chemical & Material Co., Ltd., product name: ZX-1356-2, Tg: approx. 71℃, weight-average molecular weight Mw: approx. 63000) (D) Component: Filler (D1) Component: Inorganic filler (D1-1) Silica filler (manufactured by Admatex Co., Ltd., product name: KE180G-HLA) (D2) Component: Organic filler (D2-1) Core-shell type organic microparticles (manufactured by Rohm & Haas Japan Co., Ltd., product name: EXL-2655) (E) Component: Flux compound (E-1) 2-methylglutaric acid (manufactured by Aldrich, melting point: approximately 78°C)

[0117] (Preparation of film-like adhesive) The components shown in Table 1 were added to an organic solvent (cyclohexanone) so that the NV value ([mass of paint after drying] / [mass of paint before drying] × 100) was 42%, and a mixture was obtained. At this time, the amount of each component added was as shown in Table 1 (unit: parts by mass). Then, Φ1.0 mm beads and Φ2.0 mm beads were added to the above mixture and stirred for 60 minutes in a bead mill (Fritsch Japan Co., Ltd., planetary type fine grinder P-7). The amount of beads added was the same as the mass of the mixture. After stirring, the beads were removed by filtration. This obtained a coating liquid for forming a film-like adhesive.

[0118] The obtained coating liquid was used to prepare the film-like adhesives of Examples 1 to 4 and Comparative Example 1. Specifically, first, the coating liquid was applied to a base film (manufactured by Teijin DuPont Films Ltd. (now Toyobo Co., Ltd.), product name: Purex A31B) using a small precision coating device (manufactured by Yasui Seiki Co., Ltd.) so that the thickness after drying would be 5 μm. Next, the coating film was dried in a clean oven (manufactured by ESPEC Corporation) at 100°C for 5 minutes to prepare the film-like adhesives of Examples 1 to 4 and Comparative Example 1.

[0119] <Evaluation of Film-Like Adhesives> (Measurement of Minimum Melt Viscosity and Melting Temperature) For the film-like adhesives prepared in Examples 1 to 4 and Comparative Example 1, the minimum melt viscosity and the temperature at which the minimum melt viscosity is observed (melting temperature) were measured using a rotary rheometer (TA Instruments, product name: ARES) under the following measurement conditions. (Measurement conditions) ・Heating rate: 10°C / min ・Frequency: 10 Hz ・Temperature range: 30 to 170°C

[0120]

[0121] As shown in Table 1, the film adhesives of Examples 1 to 4 had lower minimum melt viscosity compared to the film adhesive of Comparative Example 1. Furthermore, it was found that the melt temperature of the film adhesives of Examples 1 to 4 did not vary significantly compared to the film adhesive of Comparative Example 1. These results confirm that the semiconductor film adhesive of this disclosure has a sufficiently low minimum melt viscosity and can suppress fluctuations in the amount of fillet generated.

[0122] 1, 1a...Film-like adhesive (film-like adhesive for semiconductors), 4...Substrate, 5...Connecting part (first connecting part), 9...Base body, 10...Connecting part (second connecting part), 11...Semiconductor device, 15...Wiring (first and second connecting parts), 20...Semiconductor chip, 25...Base body, 30...Connecting bump, 32...Bump (first and second connecting parts), 40...Sealing part, 100, 200, 500...Semiconductor device, A...Semiconductor wafer, A'...Semiconductor chip.

Claims

A film-like adhesive for semiconductors, comprising a thermosetting resin, a curing agent, a thermoplastic resin, and a filler, The thermosetting resin includes an epoxy resin that is solid at 25°C. The total content of the epoxy resin that is solid at 25°C and the thermoplastic resin is 40% by mass or more, based on the total amount of the semiconductor film adhesive. The mass ratio of the content of the epoxy resin that is solid at 25°C to the content of the thermoplastic resin is 3.0 or more. Film-type adhesive for semiconductors. 　 The thermosetting resin includes an epoxy resin that is liquid at 25°C. The semiconductor film adhesive according to claim 1. 　 The filler includes inorganic fillers and organic fillers. The semiconductor film adhesive according to claim 1. 　 Further containing flux compounds, The semiconductor film adhesive according to claim 1. A non-conductive film-like adhesive for semiconductors according to claim 1. 　 A semiconductor film adhesive according to claim 1, used for joining a semiconductor chip to a substrate and sealing the gap between the semiconductor chip and the substrate. 　 A semiconductor film adhesive according to any one of claims 1 to 6, An adhesive tape provided on the aforementioned semiconductor film-like adhesive, Equipped with, Adhesive tape. 　 A step of preparing a semiconductor chip with a film-like adhesive, comprising a semiconductor chip and a semiconductor film-like adhesive according to any one of claims 1 to 6 provided on the semiconductor chip, The process involves placing the semiconductor chip with the film-like adhesive onto a substrate from the film-like adhesive side, and heating it to electrically connect the connection portion of the semiconductor chip to the connection portion of the substrate, and to seal the gap between the semiconductor chip and the substrate. Equipped with, A method for manufacturing a semiconductor device. 　 A semiconductor chip having a first connection portion, A base having a second connection part electrically connected to the first connection part, A sealing portion that joins the semiconductor chip and the substrate and fills the gap between the semiconductor chip and the substrate, Equipped with, The sealing portion is a cured product of a semiconductor film adhesive according to any one of claims 1 to 6. Semiconductor equipment.

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