Substrate processing method and substrate processing apparatus

Abstract

A substrate processing method includes: a step for carrying a first substrate into a chamber; a step of performing main processing on the first substrate by supplying, from a chemical liquid nozzle, a processing liquid at a temperature different from room temperature to the substrate; a step for carrying the first substrate out of the chamber and carrying a second substrate into the chamber; a step for starting discharge of the processing liquid at a timing when a fixed period of time has elapsed since the discharge of the processing liquid was stopped, and performing the main processing on the second substrate; a step for carrying the second substrate out of the chamber and carrying a third substrate into the chamber; and a step for starting discharge of the processing liquid at a timing when a fixed period of time has elapsed since the discharge of the processing liquid was stopped, and performing the main processing on the third substrate.

Description

Substrate Processing Method and Substrate Processing Apparatus

[0001] The present invention relates to a substrate processing method and a substrate processing apparatus for processing a substrate. Examples of the substrate include a semiconductor wafer, a substrate for an FPD (Flat Panel Display) such as a liquid crystal display device or an organic EL (electroluminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, a substrate for a solar cell, and the like.

[0002] Patent Document 1 discloses a substrate processing apparatus and a substrate processing method capable of improving the uniformity of the processing results with a processing liquid among a plurality of substrates. In paragraph 0069 of Patent Document 1, it is described that "the control unit 30 controls the discharge time of the processing liquid in the pre-dispensing process for each substrate W so that the temperature of the processing liquid at the end time of the pre-dispensing process is uniform among the three substrates W based on the detection result of the temperature detection unit 17."

[0003] Japanese Unexamined Patent Application Publication No. 2019-160910

[0004] At least one embodiment of the present invention provides a substrate processing method and a substrate processing apparatus capable of suppressing variations in processing among a plurality of substrates by a method different from the conventional method when processing a plurality of substrates one by one with a processing liquid.

[0005] One embodiment of the present invention includes a first transfer step of loading a first substrate into a chamber, a first main processing step of performing a main process of supplying a processing liquid at a temperature different from room temperature from a processing liquid nozzle to the first substrate, a second transfer step of unloading the first substrate from the chamber and loading a second substrate into the chamber, a second main processing step of starting the discharge of the processing liquid at a timing when a certain time has elapsed after stopping the discharge of the processing liquid in the first main processing step and performing the main process on the second substrate, a third transfer step of unloading the second substrate from the chamber and loading a third substrate into the chamber, and a third main processing step of starting the discharge of the processing liquid at a timing when the certain time has elapsed after stopping the discharge of the processing liquid in the second main processing step and performing the main process on the third substrate.

[0006] In the above embodiment, at least one of the following features may be added to the substrate processing method.

[0007] The second processing step supplies the processing liquid that was first discharged from the processing liquid nozzle after the discharge of the processing liquid in the first processing step was stopped to the second substrate, and the third processing step supplies the processing liquid that was first discharged from the processing liquid nozzle after the discharge of the processing liquid in the second processing step was stopped to the third substrate.

[0008] The substrate processing method further includes a pre-processing step of discharging the processing liquid from the processing liquid nozzle toward an object other than the substrate to be used in the main processing, and the first main processing step starts discharging the processing liquid at a certain time after the discharging of the processing liquid in the pre-processing step has stopped, and performs the main processing on the first substrate.

[0009] The substrate processing method further includes a time measurement step of measuring the elapsed time since the processing liquid nozzle stopped discharging the processing liquid, the second processing step of causing the processing liquid nozzle to wait to discharge the processing liquid until the elapsed time since the processing liquid nozzle stopped discharging the processing liquid to the first substrate reaches the predetermined time, and the third processing step of causing the processing liquid nozzle to wait to discharge the processing liquid until the elapsed time since the processing liquid nozzle stopped discharging the processing liquid to the second substrate reaches the predetermined time.

[0010] In the second processing step, even if the second substrate is inside the chamber, the processing liquid nozzle is kept waiting to discharge the processing liquid until the elapsed time reaches the predetermined time. In the third processing step, even if the third substrate is inside the chamber, the processing liquid nozzle is kept waiting to discharge the processing liquid until the elapsed time reaches the predetermined time.

[0011] In the second processing step, if the processing liquid nozzle is not ready to discharge the processing liquid toward the second substrate before the elapsed time from when the processing liquid nozzle stopped discharging the processing liquid toward the first substrate reaches a time limit shorter than the predetermined time, the processing liquid nozzle will discharge the processing liquid toward an object other than the substrate to be used for the processing, and then, at the timing when the predetermined time has elapsed since the discharge of the processing liquid stopped, the discharge of the processing liquid will be started and the processing of the second substrate will be performed.

[0012] The time from when the first substrate is removed from the chamber until the second substrate is loaded into the chamber is different from the time from when the second substrate is removed from the chamber until the third substrate is loaded into the chamber.

[0013] The substrate processing method further includes: a schedule creation step of creating a schedule for processing three or more substrates one by one in the chamber with the processing liquid discharged from the processing liquid nozzle; an interval confirmation step of checking in the schedule whether all the times from when the processing liquid nozzle stops discharging the processing liquid to the substrates in the chamber until when the processing liquid nozzle starts discharging the processing liquid to the next substrate in the chamber are the same; a schedule modification step of adjusting all the times in the schedule to match the maximum value of the times in the schedule if all the times in the schedule are not the same; and a schedule execution step of executing a plurality of steps, including the first transport step, the first main processing step, the second transport step, the second main processing step, the third transport step, and the third main processing step, by executing the schedule in which all the times are the same.

[0014] Another embodiment of the present invention includes a processing liquid nozzle that discharges a processing liquid at a temperature different from room temperature; a processing liquid valve that switches between an open state in which the processing liquid nozzle performs the discharge of the processing liquid and a closed state in which the processing liquid nozzle stops the discharge of the processing liquid; a chamber that houses a single substrate to which the processing liquid discharged from the processing liquid nozzle should be supplied; a transport system that loads and unloads a plurality of substrates one by one into and out of the chamber; and a control device that controls the processing liquid valve and the transport system, wherein the control device includes a first transport step of loading the first substrate into the chamber and the main process of supplying the processing liquid from the processing liquid nozzle to the substrate for the first substrate. The present invention provides a substrate processing apparatus that performs the following steps: a first main processing step of removing the first substrate from the chamber and loading the second substrate into the chamber; a second main processing step of starting the discharge of the processing liquid after a certain period of time has elapsed since the discharge of the processing liquid in the first main processing step was stopped, and performing the main processing on the second substrate; a third transport step of removing the second substrate from the chamber and loading the third substrate into the chamber; and a third main processing step of starting the discharge of the processing liquid after a certain period of time has elapsed since the discharge of the processing liquid in the second main processing step was stopped, and performing the main processing on the third substrate.

[0015] In the above embodiment, at least one of the following features may be added to the substrate processing apparatus.

[0016] The second processing step supplies the processing liquid that was first discharged from the processing liquid nozzle after the discharge of the processing liquid in the first processing step was stopped to the second substrate, and the third processing step supplies the processing liquid that was first discharged from the processing liquid nozzle after the discharge of the processing liquid in the second processing step was stopped to the third substrate.

[0017] The substrate processing apparatus further includes an object other than the substrate used in the main processing, the control device further performs a pre-processing step of discharging the processing liquid from the processing liquid nozzle toward the object, and the first main processing step starts discharging the processing liquid at a certain time after the discharging of the processing liquid in the pre-processing step has stopped, and performs the main processing on the first substrate.

[0018] The substrate processing apparatus further includes a clock or timer for measuring the elapsed time since the processing liquid nozzle stopped discharging the processing liquid, the control device further performs a time measurement step for measuring the elapsed time since the processing liquid nozzle stopped discharging the processing liquid, the second processing step causes the processing liquid nozzle to wait to discharge the processing liquid until the elapsed time since the processing liquid nozzle stopped discharging the processing liquid to the first substrate reaches the predetermined time, and the third processing step causes the processing liquid nozzle to wait to discharge the processing liquid until the elapsed time since the processing liquid nozzle stopped discharging the processing liquid to the second substrate reaches the predetermined time.

[0019] In the second processing step, even if the second substrate is inside the chamber, the processing liquid nozzle is kept waiting to discharge the processing liquid until the elapsed time reaches the predetermined time. In the third processing step, even if the third substrate is inside the chamber, the processing liquid nozzle is kept waiting to discharge the processing liquid until the elapsed time reaches the predetermined time.

[0020] In the second processing step, if the processing liquid nozzle is not ready to discharge the processing liquid toward the second substrate before the elapsed time from when the processing liquid nozzle stopped discharging the processing liquid toward the first substrate reaches a time limit shorter than the predetermined time, the processing liquid nozzle will discharge the processing liquid toward an object other than the substrate to be used for the processing, and then, at the timing when the predetermined time has elapsed since the discharge of the processing liquid stopped, the discharge of the processing liquid will be started and the processing of the second substrate will be performed.

[0021] The time from when the first substrate is removed from the chamber until the second substrate is loaded into the chamber is different from the time from when the second substrate is removed from the chamber until the third substrate is loaded into the chamber.

[0022] The control device further executes: a schedule creation step of creating a schedule for processing three or more substrates one by one in the chamber with the processing liquid discharged from the processing liquid nozzle; an interval confirmation step of checking in the schedule whether all the times from when the processing liquid nozzle stops discharging the processing liquid to the substrates in the chamber until when the processing liquid nozzle starts discharging the processing liquid to the next substrate in the chamber are the same; a schedule modification step of adjusting all the times in the schedule to match the maximum value of the times in the schedule if all the times in the schedule are not the same; and a schedule execution step of executing a schedule in which all the times are the same, thereby executing a plurality of steps including the first transport step, the first main processing step, the second transport step, the second main processing step, the third transport step, and the third main processing step.

[0023] This is a schematic plan view showing the layout of a substrate processing apparatus according to one embodiment. This is a schematic side view of the substrate processing apparatus. This is a schematic diagram showing the interior of the processing unit viewed horizontally. This is a block diagram showing the electrical configuration of the substrate processing apparatus. This is a process diagram illustrating an example of substrate processing performed by the substrate processing apparatus. This is a schematic diagram illustrating multiple processes performed in one chamber. This is a schematic diagram showing three examples of multiple processes performed in one chamber. This is a flowchart illustrating Example 3 in Figure 6. This is a block diagram illustrating the scheduler. This is a flowchart showing the flow from creating a schedule to executing it.

[0024] Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0025] Figure 1A is a schematic plan view showing the layout of a substrate processing apparatus 1 according to one embodiment. Figure 1B is a schematic side view of the substrate processing apparatus 1.

[0026] As shown in Figure 1A, the substrate processing apparatus 1 is a single-wafer type apparatus that processes disc-shaped substrates W, such as semiconductor wafers, one at a time. The substrate processing apparatus 1 includes a load port LP that holds carriers CA, such as FOUPs (Front-Opening Unified Pods), which accommodate multiple substrates W; multiple processing units 2 that process the substrates W transported from the carriers CA on the load port LP with processing fluids such as processing liquid and processing gas; a transport system TS that transports the substrates W between the carriers CA on the load port LP and the multiple processing units 2; an outer wall 1a that forms a sealed space housing the multiple processing units 2 and the transport system TS; and a control device 3 that controls the substrate processing apparatus 1.

[0027] Multiple processing units 2 form multiple towers TW. Figure 1A shows an example in which four towers TW are formed. As shown in Figure 1B, the multiple processing units 2 contained in one tower TW are stacked vertically. As shown in Figure 1A, the multiple towers TW form two rows that extend in the depth direction of the substrate processing apparatus 1 (left-right direction in Figure 1A) in a plan view. In a plan view, the two rows face each other via a transport path TP.

[0028] The transport system TS includes an indexer robot IR that loads and unloads substrates W to and from a carrier CA on a load port LP, and a center robot CR that loads and unloads substrates W to and from a plurality of processing units 2. The center robot CR is positioned on the transport path TP. The indexer robot IR is positioned between the load port LP and the center robot CR in a plan view. The indexer robot IR passes the substrates W to the center robot CR and receives the substrates W from the center robot CR. The same applies to the center robot CR.

[0029] The indexer robot IR includes one or more hands Hi that horizontally support the substrate W. The hands Hi are movable in both the horizontal and vertical directions. The hands Hi are rotatable around a vertical line. The hands Hi can load and unload the substrate W to and from any carrier CA on any load port LP, and can transfer the substrate W between the center robot CR and the hand Hi.

[0030] The central robot CR includes one or more hands Hc that horizontally support the substrate W. The hands Hc are movable in both the horizontal and vertical directions. The hands Hc are rotatable around a vertical line. The hands Hc can transfer the substrate W to and from the indexer robot IR, and can load and unload the substrate W to and from any of the processing units 2.

[0031] The control device 3 controls the electrical and electronic equipment provided in the substrate processing device 1. The control device 3 includes at least one computer that can communicate with each other. The computer includes a CPU (Central Processing Unit) 3a that processes information such as program execution, and a memory 3b that stores information such as programs to be executed by the CPU 3a. The CPU is also called a processor. The control device 3 controls the substrate processing device 1 to transport and process the substrate W, which will be described later. In other words, the control device 3 is programmed to transport and process the substrate W, which will be described later.

[0032] The substrate processing apparatus 1 may include a dummy substrate WD. The dummy substrate WD is a board that is the same as or approximately the same as the substrate W in shape and size. The specifications of the dummy substrate WD other than shape and size (such as weight and material) may be the same as or different from those of the substrate W. The dummy substrate WD may be a board with different specifications from the substrate W, or it may be a board that can be used as the substrate W. In the latter case, the dummy substrate WD differs from the substrate W only in that semiconductor devices are not formed on it, and its specifications other than shape and size are the same as those of the substrate W.

[0033] If a transport system TS, such as a center robot CR, can access the dummy substrate WD, the dummy substrate WD may be placed outside or inside the substrate processing device 1. In the former case, the dummy substrate WD may be placed inside the carrier CA on the load port LP. Figure 1A shows an example in which the dummy substrate WD is placed inside the carrier CA at the bottom of the page. The dummy substrate WD is used, for example, when performing ADR (Auto Dummy Run), which will be described later.

[0034] Next, we will describe the processing unit 2.

[0035] Figure 2 is a schematic diagram showing the inside of the processing unit 2 viewed horizontally. The processing unit 2 includes a chamber 4 for housing the substrate W and a spin chuck 10 that holds one substrate W horizontally within the chamber 4 and rotates it around a vertical axis of rotation A1 passing through the center of the substrate W.

[0036] Chamber 4 includes a box-shaped partition wall 5 with a passage 5b through which the substrate W passes, and a door 6 that opens and closes the passage 5b. The FFU 7 (Fan Filter Unit 7) is positioned above an air outlet 5a located at the top of the partition wall 5. The FFU 7 constantly supplies clean air (air filtered by the filter) into Chamber 4 from the air outlet 5a. The gas inside Chamber 4 is discharged from Chamber 4 through an exhaust duct 8 connected to the bottom of the processing cup 21. This constantly creates a downflow of clean air inside Chamber 4. The flow rate of the exhaust discharged into the exhaust duct 8 is changed according to the opening degree of the exhaust valve 9 located inside the exhaust duct 8.

[0037] The spin chuck 10 includes a horizontally held disc-shaped spin base 12, a plurality of chuck pins 11 that horizontally hold the substrate W above the spin base 12, and a spin motor 13 that rotates the spin base 12 and the plurality of chuck pins 11 around the rotation axis A1. Although the spin chuck 10 includes three or more chuck pins 11, Figure 2 is depicted as having only two chuck pins 11.

[0038] The spin chuck 10 is not limited to a clamping type chuck in which a plurality of chuck pins 11 contact the end face of the substrate W, but may also be a vacuum type chuck that holds the substrate W horizontally by adhering the back surface (bottom surface) of the substrate W, which is a non-device forming surface, to the upper surface 12u of the spin base 12. When the spin chuck 10 is a clamping type chuck, the plurality of chuck pins 11 correspond to a substrate holder. When the spin chuck 10 is a vacuum type chuck, the spin base 12 corresponds to a substrate holder.

[0039] The processing unit 2 includes a cylindrical processing cup 21 that receives processing liquid scattered from the substrate W. The processing cup 21 includes a plurality of guards 24 that receive processing liquid discharged outward from the substrate W held by the spin chuck 10, a plurality of cups 23 that receive processing liquid guided downward by the plurality of guards 24, and a cylindrical outer wall 22 that surrounds the plurality of guards 24 and the plurality of cups 23. Figure 2 shows an example in which four guards 24 and three cups 23 are provided, and the outermost cup 23 is integrated with the third guard 24 from the top.

[0040] The guard 24 includes a cylindrical portion 25 surrounding the spin chuck 10 and an annular ceiling portion 26 extending diagonally upward toward the rotation axis A1 from the upper end of the cylindrical portion 25. Multiple ceiling portions 26 are stacked vertically, and multiple cylindrical portions 25 are arranged concentrically. The annular upper end of the ceiling portion 26 corresponds to the upper end 24u of the guard 24 surrounding the substrate W and spin base 12 in a plan view. Multiple cups 23 are each located below the multiple cylindrical portions 25. The cups 23 form annular grooves that receive the processing liquid guided downward by the guard 24.

[0041] The processing unit 2 includes a guard lifting actuator 27 that individually raises and lowers a plurality of guards 24. The guard lifting actuator 27 stops the guard 24 at an arbitrary position within the range from the upper position to the lower position. FIG. 2 shows a state in which two guards 24 are arranged at the upper position and the remaining two guards 24 are arranged at the lower position. The upper position is a position arranged above the holding position where the substrate W held by the spin chuck 10 is arranged and where the upper end 24u of the guard 24 is held by the spin chuck 10. The lower position is a position where the upper end 24u of the guard 24 is arranged below the holding position.

[0042] An actuator is a device that converts driving energy representing electrical, fluid, magnetic, thermal, or chemical energy into mechanical work, that is, the movement of a physical object. Actuators include electric motors (rotary motors), linear motors, air cylinders, and other devices. When the movement of the actuator is different from the movement of the object, a motion converter that converts the movement of the actuator into linear motion or rotation may be provided. For example, when the actuator is an electric motor and the object is to be linearly moved, the rotation of the electric motor may be converted into linear motion by a motion converter such as a ball screw and a ball nut.

[0043] The processing unit 2 includes a plurality of nozzles that discharge a processing fluid such as a processing liquid or a processing gas toward the substrate W held by the spin chuck 10. The plurality of nozzles include a chemical liquid nozzle 31 that discharges a chemical liquid toward the upper surface of the substrate W, a first rinse liquid nozzle 32 that discharges a rinse liquid toward the upper surface of the substrate W, and a second rinse liquid nozzle 33 that discharges a rinse liquid toward the upper surface of the substrate W. FIG. 2 shows an example in which the chemical liquid is SPM and the rinse liquid is pure water (DIW).

[0044] The chemical liquid nozzle 31 is connected to a chemical liquid pipe 31p that guides the chemical liquid. When the chemical liquid valve 31v attached to the chemical liquid pipe 31p is opened, the discharge port 31o of the chemical liquid nozzle 31 continuously discharges the chemical liquid downward. The chemical liquid may be a liquid containing at least one of sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, acetic acid, aqueous ammonia, hydrogen peroxide water, organic acids (such as citric acid, oxalic acid, etc.), organic alkalis (such as TMAH: tetramethylammonium hydroxide, etc.), surfactants, and corrosion inhibitors, or it may be other liquids.

[0045] Although not shown in the figure, the chemical liquid valve 31v includes a valve body provided with an annular valve seat through which the chemical liquid passes, a valve element movable with respect to the valve seat, and an actuator that moves the valve element between a closed position where the valve element contacts the valve seat and an open position where the valve element is separated from the valve seat. The same applies to other valves. The actuator may be a pneumatic actuator or an electric actuator, or it may be other actuators. The control device 3 opens and closes the chemical liquid valve 31v, etc. by controlling the actuator.

[0046] The chemical liquid nozzle 31 is an example of a processing liquid nozzle. The chemical liquid valve 31v is an example of a processing liquid valve. The chemical liquid pipe 31p is an example of a processing liquid pipe. The state where the chemical liquid valve 31v is open corresponds to the open state where the chemical liquid nozzle 31 executes the discharge of the chemical liquid. The state where the chemical liquid valve 31v is closed corresponds to the closed state where the chemical liquid nozzle 31 stops the discharge of the chemical liquid. The chemical liquid discharged from the chemical liquid nozzle 31 is an example of a processing liquid. The processing liquid is a liquid at a temperature different from room temperature (for example, 20 to 30°C). Room temperature is the air temperature in the clean room where the substrate processing apparatus 1 is installed. Strictly speaking, room temperature is the temperature of the atmosphere in contact with the chemical liquid nozzle 31. Room temperature may also be the air temperature in the chamber 4.

[0047] The discharge port 31o of the chemical solution nozzle 31 is located inside the chamber 4. The discharge port 31o of the chemical solution nozzle 31 corresponds to the discharge port of the processing liquid nozzle. If the temperature of the processing liquid when discharged from the discharge port of the processing liquid nozzle is different from room temperature, the processing liquid may be an unmixed liquid that is not mixed with other liquids inside the substrate processing apparatus 1 or its peripheral equipment (such as a cabinet arranged around the substrate processing apparatus 1), or it may be a mixed liquid containing two or more component liquids that are mixed inside the substrate processing apparatus 1 or its peripheral equipment.

[0048] The temperature of the processing solution may be controlled by heating with a heater, cooling with a cooler, or by a chemical reaction (exothermic or endothermic) resulting from the mixing of two or more component solutions, or by two or more of these methods. If the processing solution is a mixture, it is acceptable for two or more component solutions at room temperature to be included, as long as two or more component solutions at temperatures different from room temperature are included.

[0049] If the processing liquid is a mixture containing two or more component liquids that are mixed as they flow toward the discharge port of the processing liquid nozzle, the two or more component liquids may be mixed within the processing liquid nozzle or before reaching the processing liquid nozzle. In the former case, two or more component liquid pipes guiding the two or more component liquids can be connected separately to the processing liquid nozzle.

[0050] SPM is a mixture of sulfuric acid and hydrogen peroxide. SPM is an example of a mixture. Sulfuric acid and hydrogen peroxide are examples of individual components. The temperature of SPM is higher than room temperature. Figure 2 shows an example in which sulfuric acid and hydrogen peroxide, mixed upstream of the chemical solution piping 31p, flow through the chemical solution piping 31p towards the chemical solution nozzle 31.

[0051] The material to be etched from the substrate W by SPM may be made of resist or of a material other than resist, such as metal. If the material to be etched is metal, the metal may be titanium nitride (TiN) or tungsten (W), or any other metal. The processing solution may be an etching solution other than SPM, or any liquid other than an etching solution. The processing solution may be SC1 (a mixture of ammonia, hydrogen peroxide, and water), and the material to be etched may be made of polysilicon.

[0052] The combinations of processing solution and etching target are SPM and TiN, SPM and SiN (silicon nitride), SC1 and PolySi (polysilicon), and dNH ４ OH (diluted aqueous ammonia) and PolySi, TMAH and PolySi, SC1 and TEOS (silicon oxide made using tetraethoxysilane), SC1 and TiN, dNH ４ OH and a-Si (amorphous silicon), and HF and SiO ２ Any of the (silicon oxide) materials may be used. However, the combination is not limited to these.

[0053] The first rinse liquid nozzle 32 is connected to the first rinse liquid piping 32p that guides the rinse liquid. When the first rinse liquid valve 32v attached to the first rinse liquid piping 32p is opened, the discharge port of the first rinse liquid nozzle 32 continuously discharges the rinse liquid downwards. The rinse liquid may be any of the following: pure water (deionized water: DIW), carbonated water, electrolyzed ionized water, hydrogen water, ozone water, hydrochloric acid water at a dilution concentration (e.g., about 1 to 100 ppm), or ammonia water at a dilution concentration (e.g., about 1 to 100 ppm), or any other liquid.

[0054] The second rinse fluid nozzle 33 is connected to a second rinse fluid pipe 33p that guides the rinse fluid. When the second rinse fluid valve 33v attached to the second rinse fluid pipe 33p is opened, the discharge port of the second rinse fluid nozzle 33 continuously discharges the rinse fluid downward. At least one of the components, concentration, and temperature of the rinse fluid discharged from the second rinse fluid nozzle 33 may be the same as or different from the components, concentration, and temperature of the rinse fluid discharged from the first rinse fluid nozzle 32.

[0055] The chemical solution nozzle 31 may be a scan nozzle that can move horizontally while discharging the chemical solution toward the substrate W, or it may be a fixed nozzle that cannot move horizontally while discharging the chemical solution toward the substrate W. The same applies to the other nozzles. Figure 2 shows an example in which the chemical solution nozzle 31 and the first rinse solution nozzle 32 are scan nozzles, and the second rinse solution nozzle 33 is a fixed nozzle.

[0056] The chemical nozzle 31 is connected to a nozzle actuator 31a that moves the chemical nozzle 31 in at least one of the vertical and horizontal directions. The first rinse liquid nozzle 32 is connected to a nozzle actuator 32a that moves the first rinse liquid nozzle 32 in at least one of the vertical and horizontal directions.

[0057] The nozzle actuator 31a moves the chemical solution nozzle 31 horizontally between a processing position where the chemical solution discharged from the chemical solution nozzle 31 is supplied to the upper surface of the substrate W, and a standby position where the chemical solution nozzle 31 is positioned around the processing cup 21 in a plan view. The nozzle actuator 32a works similarly. Figure 2 shows the chemical solution nozzle 31 positioned at the processing position with a solid line, and the chemical solution nozzle 31 positioned at the standby position with a dashed line.

[0058] The processing unit 2 may include a standby pod 41 that receives the chemical solution discharged downward from the chemical solution nozzle 31. The standby pod 41 is also called a standby pot. The standby pod 41 is located inside the chamber 4. When the substrate W held by the spin chuck 10 is viewed vertically from above the substrate W, the standby pod 41 is located around the substrate W. The standby pod 41 includes a cylindrical inner surface that forms an internal space visible when the standby pod 41 is viewed vertically from above the standby pod 41, and a bottom surface that closes the lower end of the inner surface of the standby pod 41. The liquid inside the standby pod 41, that is, the liquid in the internal space of the standby pod 41, is discharged outside the standby pod 41 through an outlet that opens at the bottom surface of the standby pod 41.

[0059] When the drug nozzle 31 is in the pre-dispense position, it discharges the drug downward toward the standby pod 41. The standby position is an example of the pre-dispense position. The pre-dispense position is the position where the discharge port 31o of the drug nozzle 31 and the standby pod 41 face each other vertically. The drug discharged from the drug nozzle 31 toward the standby pod 41 may or may not be reused. In other words, the drug may or may not be supplied back to the drug nozzle 31.

[0060] If the discharge port 31o of the liquid chemical nozzle 31 and the standby pod 41 are facing each other vertically, the pre-dispense position may be a position where the discharge port 31o of the liquid chemical nozzle 31 is located outside the standby pod 41, or a position where the discharge port 31o of the liquid chemical nozzle 31 is located inside the standby pod 41. In the latter case, the nozzle actuator 31a may move the liquid chemical nozzle 31 vertically between a standby position where the discharge port 31o of the liquid chemical nozzle 31 is located above the standby pod 41 and a pre-dispense position where the discharge port 31o of the liquid chemical nozzle 31 is located inside the standby pod 41.

[0061] Next, the electrical configuration of the substrate processing apparatus 1 will be described.

[0062] Figure 3 is a block diagram showing the electrical configuration of the substrate processing apparatus 1. The substrate processing apparatus 1 includes a control device 3 that controls the controlled objects 3g, such as electrical equipment and electronic equipment provided in the substrate processing apparatus 1. The devices provided in the substrate processing apparatus 1, such as the processing unit 2 and actuators, are included in the controlled objects 3g.

[0063] The control device 3 includes at least one computer capable of communicating with each other. The computer includes a CPU 3a that executes various instructions. The computer further includes a main memory 3c that stores information to be sent and received with the CPU 3a, a storage 3d that stores information to be sent and received with the main memory 3c, such as a program PG, and a communication interface 3f to which other devices such as a host computer HC are connected. The computer may also include a reader 3e that reads information from a removable media RM. The computer may be connected to an external storage ES via the communication interface 3f.

[0064] The control device 3 is connected to an input device 3h and a display device 3i. The input device 3h is operated when an operator, such as a user or maintenance personnel, inputs information into the substrate processing device 1. The information is displayed on the screen of the display device 3i. The input device 3h may be a keyboard, a pointing device, or a touch panel, or it may be a device other than these. A touch panel display that serves as both the input device 3h and the display device 3i may be provided in the substrate processing device 1.

[0065] The CPU 3a executes the program PG stored in the storage 3d. The program PG in the storage 3d may be pre-installed on the control device 3, sent to the storage 3d from an external device such as an external storage ES via the communication interface 3f, or sent to the storage 3d from the removable media RM via the reader 3e.

[0066] Main memory 3c is the primary memory. Storage 3d, removable media RM, and external storage ES are auxiliary memory. Main memory 3c is volatile memory that retains data only when power is supplied. Storage 3d, removable media RM, and external storage ES are non-volatile memory that retains data even when power is not supplied.

[0067] Storage 3d is, for example, a magnetic storage device such as a hard disk drive or a semiconductor memory such as an SSD (Solid State Drive). Removable media RM is, for example, an optical disc such as a compact disc or a semiconductor memory such as a memory card. External storage ES is a magnetic storage device such as a hard disk drive, or a semiconductor memory such as an SSD or a USB (Universal Serial Bus) flash drive (so-called USB memory).

[0068] The external storage ES may be connected to the communication interface 3f via a USB cable, or via a LAN (Local Area Network). In the latter case, the external storage ES may be a NAS (Network Attached Storage). If the control device 3 does not have a reader 3e, the removable media RM may be connected to the communication interface 3f via an external reader 3e.

[0069] Main memory 3c, storage 3d, removable media RM, and external storage ES are examples of memory 3b that store at least one of the information sent to the CPU 3a and the information received from the CPU 3a. Storage 3d, removable media RM, and external storage ES are examples of computer-readable recording media on which a program PG is recorded. Storage 3d, removable media RM, and external storage ES are non-transitory tangible media.

[0070] Storage 3d stores multiple recipes RC. Recipe RC is information that defines the processing content, processing conditions, and processing procedure of the substrate W. Multiple recipes RC differ from each other in at least one of the processing content, processing conditions, and processing procedure of the substrate W. The control device 3 controls the substrate processing apparatus 1 so that the substrate W is processed according to the recipe RC specified by the host computer HC. The control device 3 is programmed to execute each of the steps described later. The program PG that executes each of the steps described later may be stored in storage 3d, removable media RM, or external storage ES.

[0071] The substrate processing apparatus 1 may be equipped with a clock or timer. The clock or timer may be part of the control device 3, or it may be a separate device connected to the control device 3. Figure 3 shows an example in which the control device 3 is equipped with a timer TM. The clock or timer is used, for example, to measure the elapsed time since the chemical nozzle 31 (see Figure 2) stopped discharging the chemical. Whether the elapsed time has reached a predetermined time, such as a fixed time or a time limit, may be determined based on whether the time obtained by adding the elapsed time to an initial value (e.g., 0 seconds) has reached the predetermined time, or it may be determined based on whether the current time has reached the time obtained by adding the predetermined time to the stop time (the time when the chemical nozzle 31 stopped discharging the chemical).

[0072] Next, we will describe an example of the processing of substrate W.

[0073] Figure 4 is a process diagram illustrating an example of the processing of the substrate W performed by the substrate processing apparatus 1. The following references are to Figures 1A, 2, and 4.

[0074] When processing the substrate W with the substrate processing apparatus 1, a loading process (step S11 in Figure 4) is performed in which the substrate W is loaded into the chamber 4.

[0075] Specifically, with all guards 24 in the lower position and all scan nozzles in the standby position, the center robot CR supports the substrate W horizontally with the hand Hc and places the substrate W on the hand Hc onto the multiple chuck pins 11. Then, the center robot CR moves the hand Hc out of the chamber 4. After the substrate W is placed on the multiple chuck pins 11, all the chuck pins 11 are pressed against the end face of the substrate W, and the substrate W is held by the multiple chuck pins 11. Then, the spin motor 13 is driven and the rotation of the substrate W begins (step S12 in Figure 4).

[0076] Next, a chemical solution supply step (step S13 in Figure 4) is performed, in which SPM, an example of a chemical solution, is supplied to the upper surface of the substrate W.

[0077] Specifically, the nozzle actuator 31a moves the chemical nozzle 31 from the standby position to the processing position. Then, with at least one guard 24 in the upper position, the chemical valve 31v is opened and the chemical nozzle 31 starts discharging SPM. After a predetermined time has elapsed since the chemical valve 31v was opened, the chemical valve 31v is closed and the discharge of SPM stops. Then, the nozzle actuator 31a moves the chemical nozzle 31 back to the standby position.

[0078] The SPM discharged from the chemical nozzle 31 collides with the upper surface of the substrate W, which is rotating at the chemical supply speed, and then flows outward along the upper surface of the substrate W. As a result, the SPM is supplied to the entire upper surface of the substrate W, and a liquid film of SPM is formed that covers the entire upper surface of the substrate W. When the chemical nozzle 31 is discharging SPM, the nozzle actuator 31a may move the collision position of the SPM with respect to the upper surface of the substrate W so that the collision position passes through the center and the outer periphery, or it may keep the collision position stationary in the center. The same applies to the processing liquid supplied to the upper surface of the substrate W after the SPM, regarding whether or not to move the collision position.

[0079] Next, a first rinse solution supply step (step S14 in Figure 4) is performed, in which pure water, which is an example of a rinse solution, is supplied to the upper surface of the substrate W.

[0080] Specifically, the nozzle actuator 32a moves the first rinse liquid nozzle 32 from the standby position to the processing position. Then, with at least one guard 24 in the upper position, the first rinse liquid valve 32v is opened, and the first rinse liquid nozzle 32 begins to discharge pure water. Before the discharge of pure water begins, the guard lifting actuator 27 may move at least one guard 24 vertically to switch the guard 24 that receives the liquid discharged from the substrate W. The same applies to the processing liquid supplied to the upper surface of the substrate W after the pure water, regarding whether or not to switch the guard 24 that receives the liquid discharged from the substrate W.

[0081] The pure water discharged from the first rinse liquid nozzle 32 collides with the upper surface of the substrate W, which is rotating at the first rinse liquid supply speed, and then flows outward along the upper surface of the substrate W. The SPM on the substrate W is replaced by the pure water discharged from the first rinse liquid nozzle 32. As a result, a liquid film of pure water is formed that covers the entire upper surface of the substrate W. After a predetermined time has elapsed since the first rinse liquid valve 32v was opened, the first rinse liquid valve 32v is closed and the discharge of pure water stops. Subsequently, the nozzle actuator 32a moves the first rinse liquid nozzle 32 to the standby position.

[0082] Next, a second rinsing solution supply step (step S15 in Figure 4) is performed, in which pure water, which is an example of a rinsing solution, is supplied to the upper surface of the substrate W.

[0083] Specifically, with at least one guard 24 in the upper position, the second rinse fluid valve 33v is opened and the second rinse fluid nozzle 33 begins discharging pure water. The pure water discharged from the second rinse fluid nozzle 33 collides with the upper surface of the substrate W, which is rotating at the second rinse fluid supply speed, and then flows outward along the upper surface of the substrate W. The pure water on the substrate W is replaced by the pure water discharged from the second rinse fluid nozzle 33. Even if SPM remains on the upper surface of the substrate W after the pure water discharged from the first rinse fluid nozzle 32 has been supplied, this SPM is washed away by the pure water discharged from the second rinse fluid nozzle 33. After a predetermined time has elapsed since the second rinse fluid valve 33v was opened, the second rinse fluid valve 33v is closed and the discharge of pure water is stopped.

[0084] Next, a drying process (step S16 in Figure 4) is performed in which the substrate W is dried by rotating the substrate W.

[0085] Specifically, the spin motor 13 accelerates the substrate W in the rotational direction. This causes the substrate W to rotate at a drying speed (e.g., several thousand rpm) greater than the rotational speed when the processing liquid, such as a chemical solution, is supplied to the substrate W. As the substrate W rotates at the drying speed, the liquid is removed from the substrate W, and the substrate W dries. After that, the spin motor 13 stops rotating. This stops the rotation of the substrate W (step S17 in Figure 4).

[0086] Next, the substrate W is removed from the chamber 4 in an unloading process (step S18 in Figure 4).

[0087] Specifically, the guard lifting actuator 27 lowers all the guards 24 to their lowest position. Then, the center robot CR moves the hand Hc into the chamber 4. After the multiple chuck pins 11 release the grip of the substrate W, the center robot CR supports the substrate W on the spin chuck 10 with the hand Hc. Then, while supporting the substrate W with the hand Hc, the center robot CR moves the hand Hc out of the chamber 4. As a result, the processed substrate W is discharged from the chamber 4.

[0088] Next, we will describe the multiple processes that take place in one chamber 4.

[0089] Figure 5 is a schematic diagram illustrating multiple processes performed in a single chamber 4. Figure 6 is a schematic diagram showing three examples (Examples 1-3) of multiple processes performed in a single chamber 4. Figure 7 is a flowchart illustrating Example 3 in Figure 6. In Figure 6, the horizontal axis represents time progressing from right to left. In the following explanation, "N" represents a positive integer (N = 1, 2, 3...).

[0090] First, definitions and terminology will be explained, followed by specific examples of the multiple processes performed in a single chamber 4.

[0091] The rectangular frames drawn with solid lines and dashed lines in Figures 5 and 6 represent processing periods during which the main process or preprocessing is performed. Of these, the rectangular frames drawn with solid lines represent the period during which the main process is performed. Of these, the rectangular frames drawn with dashed lines represent the period during which preprocessing is performed.

[0092] This process involves treating a single substrate W with a chemical solution discharged from a chemical nozzle 31, followed by drying the substrate W. This process is performed inside a chamber 4. The treatment of the substrate W shown in Figure 4 is an example of this process. Example 1 in Figure 6 shows an example where all of this process is the same. The same applies to Examples 2 and 3 in Figure 6.

[0093] Pretreatment is a process performed before the main process to prepare for the main process. Pretreatment is also called preparation or preparatory processing. Pretreatment is a process performed inside the chamber 4. Pretreatment is a process in which the chemical solution is discharged from the chemical solution nozzle 31 toward objects other than the substrate W, such as the dummy substrate WD and the standby pod 41.

[0094] Pre-processing is performed in a certain chamber 4 before the first main processing is performed in that chamber 4 after the substrate processing device 1 is started up. Pre-processing is performed in a certain chamber 4 if the main processing has not been performed in that chamber 4 for a long period of time (longer than a certain period of time described later). Pre-processing may also be performed at any other time.

[0095] The pretreatment may be at least one of ADR (Auto Dummy Run) and pre-dispense, or it may be a treatment other than ADR and pre-dispense. ADR is the same or generally the same as the main treatment performed first after ADR, except that the substrate W is replaced with a dummy substrate WD. Pre-dispense is the treatment in which the chemical nozzle 31 discharges the chemical solution toward the standby pod 41. Pre-dispense is also called dummy dispense.

[0096] The process of performing the main process corresponds to the main process, and the process of performing the preprocessing corresponds to the preprocessing process. When the main process is performed, the processing period is the period during which the substrate W is inside the chamber 4, that is, the period from when the substrate W is loaded into the chamber 4 until the substrate W is removed from the chamber 4. When ADR, an example of preprocessing, is performed, the processing period is the period during which the dummy substrate WD is inside the chamber 4, that is, the period from when the dummy substrate WD is loaded into the chamber 4 until the dummy substrate WD is removed from the chamber 4.

[0097] The hatched areas in Figures 5 and 6 represent the discharge period during which the chemical nozzle 31 is discharging the chemical solution. Of these, areas with narrow hatching intervals represent the period during which the chemical nozzle 31 is discharging the chemical solution toward the substrate W (discharging period of the main process). Of these, areas with wide hatching intervals represent the period during which the chemical nozzle 31 is discharging the chemical solution toward objects other than the substrate W, such as the dummy substrate WD or the standby pod 41 (discharging period of the pre-treatment). If all main processes are the same, the length of the discharge period of the main process (discharging time TB) is constant.

[0098] In both the main process and the pre-processing, the discharge period is part of the processing period. In addition to the discharge period, the processing period may include a non-discharge period during which the chemical nozzle 31 is not discharging the chemical. The non-discharge period may include an input / discharge interval TA, which is the time from when the substrate W or dummy substrate WD is loaded into the chamber 4 until the chemical nozzle 31 starts discharging the chemical onto the substrate W or dummy substrate WD, and a discharge / removal interval TC, which is the time from when the chemical nozzle 31 stops discharging the chemical onto the substrate W or dummy substrate WD until the substrate W or dummy substrate WD is removed from the chamber 4.

[0099] In any processing period, the length of the discharge period (discharge time TB) may be equal to or different from the length of the non-discharge period (non-discharge time). In any processing period, the input / discharge interval TA may be equal to or different from the discharge / export interval TC. In any processing period, the discharge time TB may be equal to or different from the input / discharge interval TA. Similarly, in any processing period, the discharge time TB may be equal to or different from the discharge / export interval TC.

[0100] In the following explanation, the loading / unloading interval TD refers to the time from when the substrate W or dummy substrate WD is loaded out of chamber 4 until the substrate W or dummy substrate WD is first loaded into chamber 4. In Figures 5 and 6, the left end of the rectangular frame represents the time when the substrate W or dummy substrate WD is loaded into chamber 4, and the right end of the frame represents the time when the substrate W or dummy substrate WD is loaded out of chamber 4.

[0101] In the following explanation, the discharge interval T1 refers to the time from the end of the first discharge, in which the chemical nozzle 31 discharges the chemical solution toward the first target object, until the start of the second discharge, in which the chemical nozzle 31 discharges the chemical solution toward the second target object. However, the chemical nozzle 31 does not discharge any chemical solution during the period between the end of the first discharge and the start of the second discharge. In Figures 5 and 6, the left end of the hatched area represents the time when the chemical nozzle 31 started discharging the chemical solution, and the right end of the same area represents the time when the chemical nozzle 31 stopped discharging the chemical solution.

[0102] In both the first and second discharges, a chemical solution at a constant temperature flows toward the chemical nozzle 31 at a constant flow rate.

[0103] For example, when heating the chemical solution with a heater, the conditions for heating the chemical solution (such as the heater's set temperature and heating time) are the same whether performing the first or second discharge. Similarly, when heating the chemical solution with heat generated by mixing two component solutions, such as sulfuric acid and hydrogen peroxide, the conditions for heating the chemical solution (such as the temperature and mixing ratio of sulfuric acid and hydrogen peroxide) are the same whether performing the first or second discharge. Therefore, if the temperature change of the chemical solution between the time its temperature is adjusted and when it is discharged from the chemical solution nozzle 31 is constant or nearly constant, then in either the first or second discharge, a chemical solution at a constant or nearly constant temperature will be discharged from the chemical solution nozzle 31 at a constant flow rate.

[0104] The first object and the second object may be two different tangible objects, or they may be one tangible object. The first object may be any of the substrate W, the dummy substrate WD, and the standby pod 41, or it may be any other tangible object. The same applies to the second object.

[0105] When the main treatment is performed in the same chamber 4 after ADR or predispense as a pretreatment, the discharge of the chemical solution from the chemical solution nozzle 31 in the pretreatment is the first discharge, and the discharge of the chemical solution from the chemical solution nozzle 31 in the main treatment is the second discharge. In this case, the first object is a dummy substrate WD or a standby pod 41, and the second object is a substrate W. When the main treatment is performed twice consecutively in one chamber 4, the first and second objects are two substrates W.

[0106] As will be discussed later, there are exceptional cases where preprocessing is performed twice consecutively, or preprocessing is performed after the main process.

[0107] If pre-treatment is performed in the same chamber 4 after this treatment, the discharge of the chemical solution from the chemical solution nozzle 31 in this treatment is the first discharge, and the discharge of the chemical solution from the chemical solution nozzle 31 in the pre-treatment is the second discharge. In this case, if the pre-treatment is ADR or pre-dispense, the first target object is the substrate W, and the second target object is the dummy substrate WD or the standby pod 41.

[0108] When pretreatment is performed twice consecutively in one chamber 4, the discharge of the chemical solution from the chemical solution nozzle 31 during the first pretreatment is the first discharge, and the discharge of the chemical solution from the chemical solution nozzle 31 during the second pretreatment is the second discharge. In this case, if the first and second pretreatments are either ADR or predispense, the first and second objects are either the dummy substrate WD or the standby pod 41.

[0109] In either the first or second discharge, if the chemical nozzle 31 discharges the chemical solution intermittently multiple times, the series of discharges is considered as one discharge. If the chemical solution is discharged intermittently multiple times in the first discharge, the point at which the chemical nozzle 31 last stops discharging the chemical solution corresponds to the point at which the first discharge is completed. If the chemical solution is discharged intermittently multiple times in the second discharge, the point at which the chemical nozzle 31 first starts discharging the chemical solution corresponds to the point at which the second discharge is started.

[0110] In the following, the inter-discharge interval T1 when the second object is a substrate W may be referred to as the inter-discharge interval T1 before processing the substrate W, or the pre-processing interval. In this case, the first object may be a substrate W, or it may be an object other than a substrate W.

[0111] When the main treatment is performed multiple times in the same chamber 4 after pretreatment, the discharge interval T1 between the pretreatment and the first main treatment means the time from when the chemical nozzle 31 stops discharging the chemical (first discharge) during the pretreatment until when the chemical nozzle 31 starts discharging the chemical (second discharge) during the first main treatment. The discharge interval T1 between the Nth main treatment and the (N+1)th main treatment means the time from when the chemical nozzle 31 stops discharging the chemical (first discharge) during the Nth main treatment until when the chemical nozzle 31 starts discharging the chemical (second discharge) during the (N+1)th main treatment. Therefore, both the discharge interval T1 between the pretreatment and the first main treatment, and the discharge interval T1 between the Nth main treatment and the (N+1)th main treatment, correspond to the pre-main treatment interval.

[0112] As will be described later, the discharge interval T1 is kept constant. In Figure 6, the length of the line segment labeled T1 (a line segment with arrows at both ends, extending to the left and right) represents the length of the discharge interval T1. Of the nine line segments labeled T1 in Figure 6, the eight line segments that intersect with two parallel line segments extending vertically represent multiple discharge intervals T1 of equal length. The length of each of these eight line segments represents a constant time. This constant time corresponds to a constant interval.

[0113] The discharge interval T1 is maintained for a certain period of time (for example, a constant value within the range of 10 to 100 seconds) in order to stabilize the temperature of the chemical solution when it is discharged from the chemical solution nozzle 31. This constant period is shorter than the time it takes for the temperature of the chemical solution flow path, including the chemical solution nozzle 31, to return to room temperature after the chemical solution nozzle 31 has discharged the chemical solution.

[0114] The ejection interval T1 does not have to be exactly a constant time. For example, the ejection interval T1 does not have to be exactly a constant time down to the decimal point. If the variation in processing among multiple substrates W treated with the chemical solution is within an acceptable range, the ejection interval T1 may deviate from a constant time by a range of less than 10 seconds. In other words, the ejection interval T1 may be exactly a constant time, or it may be substantially a constant time.

[0115] While the discharge interval T1 is kept constant, the loading / unloading interval TD is not necessarily constant. The length of the processing period is also not necessarily constant. The maximum length of the processing period may be equal to or different from the maximum value of the loading / unloading interval TD. Similarly, the maximum length of the processing period may be equal to or different from the discharge interval T1. The discharge interval T1 may be equal to or different from the maximum value of the loading / unloading interval TD.

[0116] Next, we will describe specific examples of multiple processes performed in a single chamber 4.

[0117] Example 1 in Figure 6 shows an example in which pretreatment is performed once, and then the main treatment is performed multiple times in the same chamber 4 (the chamber 4 in which pretreatment was performed). In Example 1, the pretreatment is ADR. In Example 1, the discharge interval T1 is constant, and the transfer / input interval TD is constant. Both discharge intervals T1 are constant in duration.

[0118] In Example 1, once the discharge of the chemical solution from the chemical solution nozzle 31 during pretreatment (first discharge) is completed, the control device 3 begins measuring the elapsed time from the time the discharge is completed, that is, the elapsed time from the time the control device 3 closes the chemical solution valve 31v (see Figure 2).

[0119] The control device 3 further checks whether the first substrate W has been loaded into the chamber 4 before the elapsed time reaches the time limit T2. The time limit T2 is the longest elapsed time at which the discharge of the chemical solution from the chemical solution nozzle 31 can be started simultaneously with the elapsed time reaching a certain period of time.

[0120] If the first substrate W is loaded into the chamber 4 before the elapsed time reaches the time limit T2, the control device 3 opens the chemical valve 31v at the same time that the elapsed time reaches a certain time. This starts the discharge of the chemical solution from the chemical nozzle 31 (second discharge) in the first main process, and the chemical solution discharged from the chemical nozzle 31 is supplied to the first substrate W in the chamber 4. When the second discharge starts, the control device 3 resets the elapsed time to its initial value.

[0121] When the discharge of the chemical solution from the chemical solution nozzle 31 (first discharge) in the first main treatment is completed, the control device 3, as described above, starts measuring the elapsed time from the time the discharge is completed and checks whether the second substrate W has been loaded into the chamber 4 before the elapsed time reaches the time limit T2. If the second substrate W has been loaded into the chamber 4 before the elapsed time reaches the time limit T2, the control device 3 starts the discharge of the chemical solution from the chemical solution nozzle 31 (second discharge) at the same time that the elapsed time reaches a certain time. Therefore, in Example 1, the discharge interval T1 between the pretreatment and the first main treatment is equal to the discharge interval T1 between the first main treatment and the second main treatment.

[0122] When performing the main process for the third time or later, the control device 3, as described above, starts measuring the elapsed time from the point when the discharge of the chemical solution from the chemical solution nozzle 31 (first discharge) is stopped, and starts the discharge of the chemical solution from the chemical solution nozzle 31 (second discharge) at the same time as the elapsed time reaches a certain period of time. Therefore, in Example 1, the discharge interval T1 between the Nth main process and the (N+1)th main process is equal to the discharge interval T1 between the (N+1)th main process and the (N+2)th main process.

[0123] If the pre-processing is ADR, the loading / unloading interval TD between the pre-processing and the first main processing corresponds to the time from when the dummy substrate WD is unloaded from chamber 4 until the first substrate W is loaded into the same chamber 4. The loading / unloading interval TD between the Nth main processing and the (N+1)th main processing corresponds to the time from when the Nth substrate W is unloaded from chamber 4 until the (N+1)th substrate W is loaded into the same chamber 4.

[0124] In Example 1, the loading / unloading interval TD between the pre-processing and the first main processing is equal to the loading / unloading interval TD between the first main processing and the second main processing. Furthermore, in Example 1, the loading / unloading interval TD between the Nth main processing and the (N+1)th main processing is equal to the loading / unloading interval TD between the (N+1)th main processing and the (N+2)th main processing.

[0125] Example 2 in Figure 6 shows an example where pre-processing is performed once, and then the main process is performed multiple times in the same chamber 4. Example 2 differs from Example 1 in that the loading / unloading interval TD is not constant.

[0126] Specifically, in Example 2, the loading / unloading interval TD between the first and second main processing is shorter than the other loading / unloading intervals TD, and the processing period of the second main processing is longer than the processing periods of the other main processing. However, the loading / unloading interval TD between the first and second main processing may be longer than the other loading / unloading intervals TD. In this case, the processing period of the second main processing may be less than or equal to the processing periods of the other main processing.

[0127] Regardless of whether the loading / unloading interval TD between the first and second main processing is relatively long or short, once the discharge of the chemical solution from the chemical solution nozzle 31 in the first main processing (first discharge) is completed, the control device 3, as described above, starts measuring the elapsed time from the time the discharge is completed and checks whether the second substrate W has been loaded into the chamber 4 before the elapsed time reaches the time limit T2.

[0128] If the second substrate W is loaded into the chamber 4 before the elapsed time reaches the time limit T2, the control device 3 starts discharging the chemical solution from the chemical solution nozzle 31 (second discharge) at the same time that the elapsed time reaches a certain time. Therefore, in Example 2, although the loading / discharging interval TA (see Figure 5) between the first and second main processes is longer or shorter than other loading / discharging intervals TA, the discharge interval T1 is maintained at a constant time. In Example 2, when performing the third and subsequent main processes, the discharge interval T1 is maintained at a constant time, similar to Example 1.

[0129] When multiple substrates W are loaded one by one into a single chamber 4, the substrates W are not necessarily loaded into the chamber 4 at regular intervals. Therefore, the loading / unloading interval TD is not necessarily constant. The control device 3 maintains a constant discharge interval T1 regardless of the length of the loading / unloading interval TD. Specifically, when the loading / unloading interval TD is relatively short, the control device 3 maintains a constant discharge interval T1 by lengthening the loading / unloading interval TA (see Figure 5). When the loading / unloading interval TD is relatively long, the control device 3 maintains a constant discharge interval T1 by shortening the loading / unloading interval TA.

[0130] Example 3 in Figure 6 shows an example where the preparation for discharging the chemical solution from the chemical solution nozzle 31 toward the substrate W was not completed before the elapsed time from the point when the chemical solution nozzle 31 finished discharging the chemical solution reached the time limit T2.

[0131] In Example 3, when the discharge of the chemical solution from the chemical solution nozzle 31 in the pretreatment or main treatment is completed (Yes in step S21 of Figure 7), the control device 3 starts measuring the elapsed time from the time the discharge was completed (step S22 of Figure 7) and checks whether the discharge preparation is complete (step S23 of Figure 7). If the discharge preparation is not complete (No in step S23 of Figure 7), it checks whether the elapsed time has reached the time limit T2 (step S24 of Figure 7). If the discharge preparation is not complete and the elapsed time has reached the time limit T2 (Yes in step S24 of Figure 7), the control device 3 checks whether the main treatment has been performed on all substrates W to be processed in the chamber 4 (step S25 of Figure 7).

[0132] If the ejection preparation is not completed by the time the elapsed time reaches the time limit T2 (Yes in step S24 of Figure 7), but the main process has been performed on all substrates W to be processed in the chamber 4 (Yes in step S25 of Figure 7), the control device 3 terminates processing in the chamber 4. If the ejection preparation is not completed by the time the elapsed time reaches the time limit T2 (Yes in step S24 of Figure 7), AND the main process has not been performed on all substrates W to be processed in the chamber 4 (No in step S25 of Figure 7), the control device 3 performs a pre-processing step, which is an example of an ejection on / off process, in the chamber 4 (step S26 of Figure 7).

[0133] Specifically, if the preceding process is a preprocessing step, the control device 3 performs the preprocessing step twice in a row. If the preceding process is the main process, the control device 3 performs the main process first, and then performs the preprocessing step in the same chamber 4. Example 3 in Figure 6 shows the latter example.

[0134] When the chemical nozzle 31 starts discharging the chemical solution during the discharge on / off process, that is, during the second pre-processing or the pre-processing after the main process, the control device 3 resets the elapsed time to its initial value. The time (elapsed time) from when the chemical nozzle 31 stops discharging the chemical solution in the process immediately preceding the discharge on / off process until when the chemical nozzle 31 starts discharging the chemical solution in the discharge on / off process may be a fixed time or may exceed a fixed time. Example 3 in Figure 6 shows the latter example.

[0135] Example 3 in Figure 6 shows an example where the pretreatment, which is an example of a discharge on / off process, is ADR. If the chemical nozzle 31 discharges the chemical solution, the discharge on / off process may be predispense, or a process other than ADR or predispense. If the discharge on / off process is performed after the pretreatment, the discharge on / off process may be the same as the pretreatment, or a different process from the pretreatment.

[0136] After performing a pre-treatment, which is an example of a discharge on / off process, the control device 3 checks whether the discharge of the chemical solution from the chemical solution nozzle 31 in the pre-treatment (first discharge) has finished (returning to step S21 in Figure 7). If the first discharge has finished (Yes in step S21 in Figure 7), the control device 3 starts measuring the elapsed time from the time the first discharge finished (step S22 in Figure 7) and checks whether the discharge preparation is complete (step S23 in Figure 7). If the discharge preparation is completed before the elapsed time reaches the time limit T2 (Yes in step S23 in Figure 7), the control device 3 checks whether the elapsed time has reached a certain time (step S27 in Figure 7). If the elapsed time has reached a certain time (Yes in step S27 in Figure 7), the control device 3 starts the discharge of the chemical solution from the chemical solution nozzle 31 (second discharge) at the same time that the elapsed time reaches a certain time (step S28 in Figure 7).

[0137] Subsequently, the control device 3 performs this process one or more times, similar to Example 1 or Example 2 in Figure 6. If the discharge preparation is not completed in time again before the elapsed time reaches the time limit T2 (No in step S25 in Figure 7), the control device 3 performs the pre-processing, which is an example of the discharge on / off process, again (step S26 in Figure 7), and starts measuring the elapsed time from the point when the discharge of the chemical solution from the chemical solution nozzle 31 in the discharge on / off process is completed. These steps are the same in Examples 1 and 2 in Figure 6.

[0138] In this way, if the dispensing preparation is not completed in time before the elapsed time reaches the time limit T2, the control device 3 performs a dispensing on / off process. Therefore, even after the dispensing preparation is not completed in time, the control device 3 can perform the processing while maintaining a constant dispensing interval T1. This makes it possible to reduce fluctuations in the temperature of the chemical solution when processing multiple substrates W one by one with the chemical solution dispensed from a single chemical solution nozzle 31, and to suppress variations in the quality of the substrates W caused by differences in the temperature of the chemical solution.

[0139] It is conceivable that pre-dispensing be performed each time the substrate W is treated with the chemical solution. In other words, each main treatment may include pre-dispensing, in which the chemical solution is discharged from the chemical solution nozzle 31 toward the standby pod 41 after the substrate W has been brought in, and main dispensing, in which the chemical solution is discharged from the chemical solution nozzle 31 toward the substrate W after the pre-dispensing.

[0140] However, if pre-dispensing is performed every time a substrate W is treated with the chemical solution, the throughput (number of substrates W processed per unit time) decreases. If the chemical solution used for pre-dispensing is not reused, the amount of chemical solution used increases. There is a possibility that residual chemical solution may drip from the chemical solution nozzle 31 during pre-dispensing. Such dripping of chemical solution is also called dripping. There is a possibility that mist or vapor from the chemical solution generated during pre-dispensing may adhere to the substrate W, etc.

[0141] As shown in Examples 1-3 of Figure 6, if pre-dispensing is omitted or reduced, throughput can be increased compared to the case where pre-dispensing is performed each time the substrate W is treated with the chemical solution. Furthermore, compared to this case, the amount of chemical solution used can be reduced, and the possibility of the chemical solution dripping from the chemical solution nozzle 31 and the possibility of chemical mist or vapor adhering to the substrate W can be reduced.

[0142] Next, I will explain Scheduler3j.

[0143] Figure 8 is a block diagram illustrating the scheduler 3j. Figure 9 is a flowchart showing the flow from creating a schedule SD to executing it.

[0144] As shown in Figure 8, the control device 3 includes a scheduler 3j that creates a schedule SD for the transport and processing of the substrate W performed by the substrate processing device 1. The scheduler 3j is a function provided by the control device 3 executing a scheduling program PG1 stored in the control device 3.

[0145] The control device 3 creates a schedule SD before the substrate processing device 1 starts transporting and processing the substrates W. Then, the control device 3 executes the schedule SD. That is, the control device 3 controls the substrate processing device 1 to transport and process multiple substrates W according to the schedule SD. Examples 1 to 3 in Figure 6 show the results of the schedule SD execution. The control device 3 can also modify the schedule SD before and during its execution.

[0146] When the substrate processing apparatus 1 processes multiple substrates W, the processing content, processing conditions, and processing procedure for each substrate W may be the same or different for all substrates W, or they may be the same for only a few substrates W, less than the total number of substrates W. In other words, all substrates W may be processed according to the same recipe RC, or they may be processed according to different recipes RC. Alternatively, only a few substrates W, less than the total number of substrates W, may be processed according to the same recipe RC.

[0147] When the substrate processing apparatus 1 processes multiple substrates W, the control device 3 creates a schedule SD in which the multiple substrates W are processed one by one in a single chamber 4 using a chemical solution (step S31 in Figure 9). In this schedule SD, the multiple substrates W are not necessarily loaded into the chamber 4 at regular intervals. Furthermore, in this schedule SD, the loading / discharging interval TA (see Figure 5) is constant. Therefore, the discharging interval T1 (see Figure 5) on the schedule SD may not be constant.

[0148] After creating the schedule SD, the control device 3 checks whether all the inter-discharge intervals T1 in the schedule SD are the same (step S32 in Figure 9). If all the inter-discharge intervals T1 in the schedule SD are the same (Yes in step S32 in Figure 9), the control device 3 executes the schedule SD (step S33 in Figure 9).

[0149] If all the inter-discharge intervals T1 in the scheduled SD are not the same (No in step S32 of Figure 9), the control device 3 selects the longest interval in the scheduled SD, i.e., the longest inter-discharge interval T1 in the scheduled SD. The longest interval corresponds to the aforementioned fixed time. After selecting the longest interval, the control device 3 changes the scheduled SD to make all the inter-discharge intervals T1 in the scheduled SD match the longest interval (step S34 of Figure 9). Then the control device 3 executes the scheduled SD (step S33 of Figure 9). As a result, a scheduled SD in which all inter-discharge intervals T1 are the same is executed.

[0150] Instead of changing the schedule SD in this way, the control device 3 may create a schedule SD so that all inter-discharge intervals T1 match the predetermined time from the beginning. The predetermined time may be a value determined empirically or experimentally. The aforementioned constant time is an example of a predetermined time.

[0151] If the default time is too short, the schedule SD may not be completed because it exceeds the number of substrates W that the transport system TS can transport simultaneously, or because the previous substrate W has not been removed from the chamber 4 by the time it should be loaded into the chamber 4. If the schedule SD cannot be completed due to a short default time, the control device 3 can create or modify the schedule SD while gradually increasing the default time by a fixed amount until the schedule SD can be completed. If the schedule SD can be completed using the initial default time, there is no need to modify the schedule SD, thus reducing the time required to create the schedule SD.

[0152] Next, the effects of this embodiment will be described.

[0153] In this embodiment, a substrate W is brought into the chamber 4, and a chemical solution is discharged from the chemical solution nozzle 31 toward the substrate W inside the chamber 4. Then, the substrate W is removed from the chamber 4, and the next substrate W is brought into the chamber 4. Then, the chemical solution is discharged from the chemical solution nozzle 31 toward the substrate W inside the chamber 4. By repeating this series of steps, multiple substrates W are processed one by one in the chamber 4 with the chemical solution.

[0154] When processing three or more substrates W one by one in the chamber 4 with a chemical solution, the discharge interval T1 before processing at least the second and third substrates W is the same. That is, the time from when the chemical solution nozzle 31 stops discharging the chemical solution to the first substrate W until the chemical solution nozzle 31 starts discharging the chemical solution to the second substrate W is constant. The time from when the chemical solution nozzle 31 stops discharging the chemical solution to the second substrate W until the chemical solution nozzle 31 starts discharging the chemical solution to the third substrate W is also constant.

[0155] The chemical solution is an example of a processing liquid. The processing liquid is a liquid at a temperature different from room temperature. When such a chemical solution comes into contact with the flow path that guides the chemical solution to the discharge port of the chemical solution nozzle 31, the temperature of the flow path, including the chemical solution nozzle 31, rapidly or gradually approaches the temperature of the chemical solution. When the chemical solution nozzle 31 stops discharging the chemical solution, the temperature of the flow path gradually returns to room temperature.

[0156] By keeping the discharge interval T1 constant before processing the substrate W, the difference between the temperature of the chemical nozzle 31 when the chemical solution is discharged to the previous substrate W and the temperature of the chemical nozzle 31 when the chemical solution is discharged to the next substrate W can be reduced. This reduces the temperature difference of the chemical solution supplied to multiple substrates W, thereby suppressing variations in processing between multiple substrates W. In other words, when comparing the quality (etching amount, cleanliness, etc.) of multiple substrates W processed with the chemical solution, the difference in quality between multiple substrates W can be reduced, improving the reproducibility of the processing.

[0157] In this embodiment, the chemical solution dispensed from the chemical solution nozzle 31 for the first time after the chemical solution nozzle 31 stops discharging the chemical solution to the substrate W is supplied to the next substrate W. In other words, the chemical solution nozzle 31 does not dispense chemical solution from the time it stops discharging chemical solution to the substrate W until it starts discharging chemical solution to the next substrate W. When the chemical solution nozzle 31 dispenses chemical solution, the temperature of the chemical solution flow path that guides the chemical solution to the discharge port of the chemical solution nozzle 31 changes. By doing so, it is possible to prevent the temperature of the flow path from changing due to the discharging of chemical solution before the discharging of chemical solution to the next substrate W begins.

[0158] In this embodiment, before discharging the chemical solution from the chemical solution nozzle 31 toward the substrate W, the chemical solution is first discharged toward objects other than the substrate W, such as a dummy substrate WD or a standby pod 41. Subsequently, after a certain period of time has elapsed since the chemical solution nozzle 31 stopped discharging the chemical solution toward objects other than the substrate W, the chemical solution nozzle 31 is started to discharge the chemical solution toward the substrate W in the chamber 4. Therefore, not only the discharge interval T1 before processing the second and subsequent substrates W after pretreatment, but also the discharge interval T1 before processing the first substrate W after pretreatment can be maintained at a constant time.

[0159] In this embodiment, the chemical nozzle 31 is made to start discharging the chemical solution based on the elapsed time since it stopped discharging the chemical solution to the substrate W. Specifically, the chemical nozzle 31 is made to wait before discharging the chemical solution until a certain amount of time has elapsed since it stopped discharging the chemical solution to the previous substrate W. Simultaneously with reaching this certain amount of time, the chemical nozzle 31 is made to discharge the chemical solution towards the next substrate W in the chamber 4. Since the elapsed time since the chemical nozzle 31 stopped discharging the chemical solution is measured, the discharge interval T1 can be matched to a certain amount of time more precisely than when the elapsed time is not measured.

[0160] In this embodiment, even when the next substrate W is loaded into the chamber 4, the chemical nozzle 31 is kept waiting to discharge the chemical solution until a certain amount of time has elapsed since the chemical solution was stopped being discharged to the previous substrate W. In other words, even if preparations are complete to start supplying the chemical solution to the next substrate W, the chemical nozzle 31 will not start discharging the chemical solution until the elapsed time matches a certain amount of time. That is, the discharge interval T1 is kept constant, rather than the time from when the substrate W is loaded into the chamber 4 until the chemical nozzle 31 starts discharging the chemical solution to the same substrate W. This makes it possible to reduce the temperature difference of the chemical solution when it is supplied to multiple substrates W.

[0161] When multiple substrates W are loaded one by one into a single chamber 4, the substrates W are not necessarily loaded into the chamber 4 at regular intervals. The loading interval of substrates W into the chamber 4 may vary due to constraints of the transport system TS and the processing unit 2. Anomalies occurring in the substrate processing device 1, peripheral devices of the substrate processing device 1, or other devices may also delay the time when substrates W are loaded into the chamber 4. Operations performed on the substrate processing device 1 by operators such as users or maintenance personnel may also delay the loading time.

[0162] If the chemical nozzle 31 is not ready to dispense the chemical solution towards the substrate W before the elapsed time reaches the time limit T2, which is shorter than a certain time, the chemical solution is dispensed from the chemical nozzle 31 towards an object other than the substrate W, such as a dummy substrate WD or a standby pod 41. After that, the dispensing of the chemical solution from the chemical nozzle 31 is stopped. If the dispensing preparation is completed in time before the elapsed time from when the chemical nozzle 31 stopped dispensing the chemical solution reaches the time limit T2, the chemical solution is dispensed from the chemical nozzle 31 towards the substrate W in the chamber 4 at the same time that the elapsed time reaches the certain time. Therefore, even if the dispensing preparation is not completed in time before the time limit T2, the substrate W can be processed with the chemical solution while maintaining a certain interval T1 between dispensing before processing the substrate W.

[0163] In this embodiment, the substrate W loading / unloading interval TD, that is, the time from when a substrate W is loaded out of the chamber 4 until the next substrate W is loaded into the same chamber 4, can change. If the loading / discharging interval TA, that is, the time from when a substrate W is loaded into the chamber 4 until the chemical nozzle 31 starts discharging the chemical solution to the substrate W, is constant, then when the substrate W loading / unloading interval TD changes, the discharging interval T1 before processing the substrate W also changes. If the loading / unloading interval TD is relatively short, the discharging interval T1 can be kept constant by lengthening the loading / discharging interval TA. If the loading / unloading interval TD is relatively long, the discharging interval T1 can be kept constant by shortening the loading / discharging interval TA. This makes it possible to process multiple substrates W one by one with the chemical solution while maintaining a constant discharging interval T1 before processing the substrates W.

[0164] In this embodiment, a schedule SD is created to process three or more substrates W one by one in the chamber 4 using a chemical solution discharged from a chemical solution nozzle 31. Then, it is checked whether all discharge intervals T1 are the same. If they are not the same, the schedule SD is changed to make all discharge intervals T1 match the longest interval, that is, the maximum value of all discharge intervals T1. Then, the schedule SD in which all discharge intervals T1 are the longest interval is executed. Therefore, compared to creating a schedule SD so that all discharge intervals T1 coincide at a predetermined time, the discharge intervals T1 can be shortened and throughput can be increased.

[0165] Next, other embodiments will be described.

[0166] In the processing of the substrate W shown in Figure 4, either the first rinse solution supply step (step S14 in Figure 4) or the second rinse solution supply step (step S15 in Figure 4) may be omitted.

[0167] When processing four or more substrates W one by one with a chemical solution in a single chamber 4, that is, when this process is performed four or more times in a single chamber 4, the discharge interval T1 does not need to be constant for all of them, as long as there is no problem with the quality of the processed substrates W.

[0168] The chemical solution supplied to the substrate W does not have to be the first chemical solution discharged from the chemical solution nozzle 31 after the chemical solution nozzle 31 stops discharging the chemical solution to the substrate W.

[0169] For example, pre-dispensing may be performed each time the substrate W is treated with the chemical solution. In other words, if the temperature of the flow path including the chemical solution nozzle 31 is constant or nearly constant when the chemical solution nozzle 31 starts discharging the chemical solution onto the substrate W (when the main dispensing starts), then each main treatment may include the aforementioned pre-dispensing and main dispensing. In this case, the time for pre-dispensing, the time from the end of pre-dispensing to the start of main dispensing, the time for main dispensing, and the time from the end of main dispensing to the start of pre-dispensing for the next main treatment should be kept constant.

[0170] The discharge interval T1 between the pretreatment and the first main treatment, that is, the time from when the chemical nozzle 31 stops discharging the chemical solution during the pretreatment until when the chemical nozzle 31 starts discharging the chemical solution during the first main treatment, may be different from a fixed time.

[0171] If the preparation for dispensing is not completed in time before the elapsed time from when the chemical nozzle 31 stops dispensing the chemical onto the substrate W reaches the time limit T2, that is, if the preparation for dispensing is completed after the elapsed time reaches the time limit T2, the main process may be performed without performing the pre-processing, which is an example of the dispensing on / off process.

[0172] If this process is performed multiple times in a single chamber 4, all of the processes do not have to be the same.

[0173] The chemical nozzle 31 is an example of a processing liquid nozzle, and the chemical solution discharged from the chemical nozzle 31 is an example of a processing liquid. The processing liquid is a temperature-controlled liquid at a temperature different from room temperature. When the chemical nozzle 31 starts discharging the chemical solution, the temperature of the flow path of the chemical solution that guides the chemical solution to the discharge port 31o of the chemical nozzle 31 approaches the temperature of the chemical solution. As the chemical nozzle 31 continues to discharge the chemical solution, the temperature of the flow path including the chemical nozzle 31 stabilizes at a constant value below the temperature of the chemical solution. This constant value is defined as the saturation temperature.

[0174] The temperature of the flow path including the chemical nozzle 31 increases to the saturation temperature as time increases from the time since the chemical nozzle 31 started discharging the chemical. The time it takes for the flow path temperature to reach the saturation temperature varies depending on the temperature of the flow path when the chemical nozzle 31 started discharging the chemical. If all the processes performed in one chamber 4 are not the same, the discharge time TB (see Figure 5) of the process may be constant or vary, as long as the temperature of the flow path is above the saturation temperature when the chemical nozzle 31 stops discharging the chemical.

[0175] The substrate processing apparatus 1 is not limited to an apparatus for processing a disc-shaped substrate W, but may also be an apparatus for processing a polygonal substrate W.

[0176] You may combine two or more of the above-mentioned components. You may also combine two or more of the above-mentioned processes.

[0177] Although embodiments of the present invention have been described in detail, these are merely specific examples used to clarify the technical content of the present invention, and the present invention should not be construed as being limited to these specific examples. The spirit and scope of the present invention are limited only by the appended claims.

[0178] This application claims priority under Japanese Patent Application No. 2024-221745, filed on 18 December 2024, and the entire contents of this application are incorporated herein by reference.

Claims

1. A substrate processing method comprising: a first transport step of transporting a first substrate into a chamber; a first main processing step of performing a main processing on the first substrate by supplying a processing liquid at a temperature different from room temperature to the substrate from a processing liquid nozzle; a second transport step of transporting the first substrate out of the chamber and transporting a second substrate into the chamber; a second main processing step of performing the main processing on the second substrate by starting the discharge of the processing liquid at a time when a certain period of time has elapsed since the discharge of the processing liquid in the first main processing step was stopped; a third transport step of transporting the second substrate out of the chamber and transporting a third substrate into the chamber; and a third main processing step of performing the main processing on the third substrate by starting the discharge of the processing liquid at a time when a certain period of time has elapsed since the discharge of the processing liquid in the second main processing step was stopped.

2. The substrate processing method according to claim 1, wherein the second processing step supplies the processing liquid first discharged from the processing liquid nozzle after stopping the discharge of the processing liquid in the first processing step to the second substrate, and the third processing step supplies the processing liquid first discharged from the processing liquid nozzle after stopping the discharge of the processing liquid in the second processing step to the third substrate.

3. The substrate processing method according to claim 1 or 2, further comprising a pre-processing step of discharging the processing liquid from the processing liquid nozzle toward an object other than the substrate to be used in the main processing, wherein the first main processing step starts discharging the processing liquid at a certain time after the discharging of the processing liquid in the pre-processing step has stopped, and performs the main processing on the first substrate.

4. The substrate processing method according to any one of claims 1 to 3, further comprising a time measurement step of measuring the elapsed time since the processing liquid nozzle stopped discharging the processing liquid, the second processing step of causing the processing liquid nozzle to wait to discharge the processing liquid until the elapsed time since the processing liquid nozzle stopped discharging the processing liquid to the first substrate reaches the certain time, and the third processing step of causing the processing liquid nozzle to wait to discharge the processing liquid until the elapsed time since the processing liquid nozzle stopped discharging the processing liquid to the second substrate reaches the certain time.

5. The substrate processing method according to claim 4, wherein the second processing step involves delaying the discharge of the processing liquid from the processing liquid nozzle until the elapsed time reaches the predetermined time, even if the second substrate is inside the chamber, and the third processing step involves delaying the discharge of the processing liquid from the processing liquid nozzle until the elapsed time reaches the predetermined time, even if the third substrate is inside the chamber.

6. The substrate processing method according to claim 4, wherein in the second main processing step, if the processing liquid nozzle is not ready to discharge the processing liquid toward the second substrate before the elapsed time from when the processing liquid nozzle stops discharging the processing liquid toward the first substrate reaches a time limit shorter than the predetermined time, the processing liquid nozzle discharges the processing liquid toward an object other than the substrate to be used for the main processing, and then, at the timing when the predetermined time has elapsed since the discharge of the processing liquid stopped, the discharge of the processing liquid is started and the main processing is performed on the second substrate.

7. The substrate processing method according to any one of claims 1 to 6, wherein the time from when the first substrate is removed from the chamber until when the second substrate is loaded into the chamber is different from the time from when the second substrate is removed from the chamber until when the third substrate is loaded into the chamber.

8. A substrate processing method according to any one of claims 1 to 7, further comprising: a schedule creation step of creating a schedule for processing three or more substrates one by one in the chamber with the processing liquid discharged from the processing liquid nozzle; an interval confirmation step of checking in the schedule whether all the times from when the processing liquid nozzle stops discharging the processing liquid to the substrates in the chamber to when the processing liquid nozzle starts discharging the processing liquid to the next substrate in the chamber are the same; a schedule modification step of adjusting all the times in the schedule to match the maximum value of the times in the schedule if all the times in the schedule are not the same; and a schedule execution step of executing a plurality of steps, including the first transport step, the first main processing step, the second transport step, the second main processing step, the third transport step, and the third main processing step, by executing the schedule in which all the times are the same.

9. A processing liquid nozzle that discharges a processing liquid at a temperature different from room temperature; a processing liquid valve that switches between an open state in which the processing liquid nozzle performs the discharge of the processing liquid and a closed state in which the processing liquid nozzle stops the discharge of the processing liquid; a chamber that houses one substrate to which the processing liquid discharged from the processing liquid nozzle should be supplied; a transport system that loads and unloads multiple substrates one by one into and out of the chamber; and a control device that controls the processing liquid valve and the transport system, wherein the control device comprises: a first transport step of loading the first substrate into the chamber; a first main processing step of performing the main processing on the first substrate by supplying the processing liquid from the processing liquid nozzle to the substrate; a second transport step of unloading the first substrate from the chamber and loading the second substrate into the chamber; and a second main processing step of starting the discharge of the processing liquid at a time when a certain period of time has elapsed since the discharge of the processing liquid in the first main processing step was stopped, and performing the main processing on the second substrate. A substrate processing apparatus that performs: a third transport step of unloading the second substrate from the chamber and unloading the third substrate into the chamber; and a third main processing step of starting the discharge of the processing liquid after a certain period of time has elapsed since stopping the discharge of the processing liquid in the second main processing step, and performing the main processing on the third substrate.

10. The substrate processing apparatus according to claim 9, wherein the second processing step supplies the processing liquid first discharged from the processing liquid nozzle after stopping the discharge of the processing liquid in the first processing step to the second substrate, and the third processing step supplies the processing liquid first discharged from the processing liquid nozzle after stopping the discharge of the processing liquid in the second processing step to the third substrate.

11. The substrate processing apparatus according to claim 9 or 10, further comprising an object other than the substrate used for the main processing, wherein the control device further performs a pre-processing step of discharging the processing liquid from the processing liquid nozzle toward the object, and the first main processing step starts discharging the processing liquid at a certain time after the discharging of the processing liquid in the pre-processing step has stopped, and performs the main processing on the first substrate.

12. The substrate processing apparatus according to any one of claims 9 to 11, further comprising a clock or timer for measuring the elapsed time since the processing liquid nozzle stopped discharging the processing liquid, the control device further performing a time measurement step for measuring the elapsed time since the processing liquid nozzle stopped discharging the processing liquid, the second processing step forcing the processing liquid nozzle to wait to discharge the processing liquid until the elapsed time since the processing liquid nozzle stopped discharging the processing liquid to the first substrate reaches the predetermined time, and the third processing step forcing the processing liquid nozzle to wait to discharge the processing liquid until the elapsed time since the processing liquid nozzle stopped discharging the processing liquid to the second substrate reaches the predetermined time.

13. The substrate processing apparatus according to claim 12, wherein the second processing step is to keep the processing liquid nozzle on standby for discharge until the elapsed time reaches the predetermined time, even if the second substrate is inside the chamber, and the third processing step is to keep the processing liquid nozzle on standby for discharge until the elapsed time reaches the predetermined time, even if the third substrate is inside the chamber.

14. The substrate processing apparatus according to claim 12, wherein, if the processing liquid nozzle is not ready to discharge the processing liquid toward the second substrate before the elapsed time from when the processing liquid nozzle stops discharging the processing liquid toward the first substrate reaches a time limit shorter than the predetermined time, the processing liquid nozzle discharges the processing liquid toward an object other than the substrate to be used for the processing, and then, at the timing when the predetermined time has elapsed since the discharge of the processing liquid stopped, the discharge of the processing liquid is started and the processing of the second substrate is performed.

15. The substrate processing apparatus according to any one of claims 9 to 14, wherein the time from when the first substrate is removed from the chamber until when the second substrate is loaded into the chamber is different from the time from when the second substrate is removed from the chamber until when the third substrate is loaded into the chamber.

16. The substrate processing apparatus according to any one of claims 9 to 15, further comprising: a schedule creation step of creating a schedule for processing three or more substrates one by one in the chamber with the processing liquid discharged from the processing liquid nozzle; an interval confirmation step of checking in the schedule whether all the times from when the processing liquid nozzle stops discharging the processing liquid to the substrates in the chamber to when the processing liquid nozzle starts discharging the processing liquid to the next substrate in the chamber are the same; a schedule modification step of adjusting all the times in the schedule to match the maximum value of the times in the schedule if all the times in the schedule are not the same; and a schedule execution step of executing a plurality of steps, including the first transport step, the first main processing step, the second transport step, the second main processing step, the third transport step, and the third main processing step, by executing the schedule in which all the times are the same.

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