Collector, traveling wave tube and electronic device
By designing a first-stage electrode extending into the transition channel and a multi-stage electrode with an inclined angle in the collector of the traveling wave tube, the problem of poor efficiency of existing traveling wave tubes in peak and deep back-off states is solved, achieving a balance between low backflow rate and high-efficiency energy recovery, and improving the overall performance of the traveling wave tube.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- HUAWEI TECH CO LTD
- Filing Date
- 2025-11-12
- Publication Date
- 2026-07-02
AI Technical Summary
Existing traveling wave tubes struggle to achieve optimal performance simultaneously under peak and deep back-off conditions, especially when it is difficult to balance low back-off rate and extremely high collection efficiency at peak power output.
By redesigning the electrode structure of the collector, the end of the first-stage electrode extends into the transition channel of the slow-wave structure. The tilt angle of the electrode is determined according to the speed of the electron beam. A multi-stage, sequentially voltage-reducing electrode design is adopted to ensure that the electron beam can immediately enter the deceleration electric field of the collector after leaving the slow-wave structure, thereby suppressing the peak backflow rate and improving the energy recovery efficiency.
It achieves both low backflow rate and high energy recovery under peak and deep back-off conditions, improving the overall efficiency of the traveling wave tube and meeting the performance requirements of the communication system.
Smart Images

Figure CN2025134340_02072026_PF_FP_ABST
Abstract
Description
Collector, traveling wave tube and electronic equipment
[0001] This application claims priority to Chinese patent application filed on December 27, 2024, with application number 202411984352.5 and entitled "Collector, Traveling Wave Tube and Electronic Device", the entire contents of which are incorporated herein by reference. Technical Field
[0002] This application relates to the field of traveling wave tube technology, and more particularly to a collector electrode, a traveling wave tube, and an electronic device. Background Technology
[0003] A traveling wave tube (TWT) is a microwave electron tube characterized by high gain, wide bandwidth, and low noise.
[0004] A traveling wave tube (TWT) mainly consists of an electron gun, a slow-wave structure, and a collector. Its working principle is based on the interaction between an electron beam and electromagnetic waves. When the electron beam passes through the TWT, it is affected by the input electromagnetic wave, resulting in velocity modulation. This causes energy exchange between the electron beam and the electromagnetic wave, amplifying the signal.
[0005] Currently, while traveling wave tubes have demonstrated unique advantages in signal amplification in the field of communications, they also face some technical challenges that make it difficult to meet the performance requirements of current communication systems. Summary of the Invention
[0006] This application provides a collector, a traveling wave tube, and an electronic device that can solve the technical problem that existing traveling wave tubes cannot meet the performance requirements of current communication systems.
[0007] In a first aspect, a collector electrode is provided for use in a traveling wave tube, the traveling wave tube including a slow wave structure and a collector electrode; the end of the slow wave structure includes a transition channel corresponding to the electron beam; the collector electrode includes multiple electrodes with sequentially decreasing voltage.
[0008] The end of the first-stage electrode in the above-mentioned multi-stage sequentially decreasing voltage electrode is located within the above-mentioned transition channel;
[0009] Alternatively, the end of the first-stage electrode is tilted into the cavity of the collecting electrode at a first tilt angle along the axis of the electron beam, the first tilt angle being determined according to the velocity of the electron beam.
[0010] In this embodiment, by extending the end of the first-stage electrode of the collector into the transition channel at the end of the slow-wave structure, the electron beam can immediately enter the deceleration electric field of the collector after leaving the slow-wave structure, thereby achieving efficient energy recovery and enabling the collector to simultaneously achieve both low peak backflow rate and high efficiency of deep backflow collectors. Alternatively, the end of the first-stage electrode can be designed to tilt inwards into the cavity of the collector at a first tilt angle along the axis of the electron beam, and the first tilt angle can be determined based on the velocity of the electron beam. This allows the first-stage electrode to more effectively collect and guide the electron beam, suppressing the peak backflow rate, thereby improving the efficiency and performance of the collector and enabling the collector to simultaneously achieve both low peak backflow rate and high efficiency of deep backflow collectors.
[0011] In one possible implementation, the end of the second-stage electrode in the multi-stage sequentially depressurized electrode is inclined at a second tilt angle θ2 toward the cavity of the collecting electrode along the axis of the electron beam.
[0012] By designing the end of the second-stage electrode to be inclined at a certain angle towards the cavity of the collector along the axis of the electron beam, the efficiency of the deep back-out collector can be improved, the backflow of electrons can be reduced, and the collector can better balance the low peak backflow rate and the high efficiency of the deep back-out collector.
[0013] In one possible implementation, the end of the first-stage electrode is located within the transition channel, and the length L of the end of the first-stage electrode extending into the transition channel satisfies the following condition: L0 > L ≥ 0.05L0
[0014] Where L0 is the length of the aforementioned transition channel.
[0015] In one possible implementation, L = 0.05L0, or L = 0.13L0, or L = 0.2L0.
[0016] The length L of the first-stage electrode extending into the transition channel, determined by the above implementation method, ensures that the first-stage electrode can effectively guide the electron beam into the deceleration electric field of the collector electrode, and also avoids excessive interference of the first-stage electrode to the electromagnetic field distribution at the end of the slow-wave structure.
[0017] In one possible implementation, the second tilt angle θ2 mentioned above satisfies the following condition:
[0018] In one possible implementation, the end of the first-stage electrode is inclined at a first tilt angle into the cavity of the collecting electrode along the axis of the electron beam, wherein the first tilt angle θ1 satisfies the following condition:
[0019] or,
[0020] Among them, v x v represents the component of the electron beam velocity along the x-axis. z v represents the component of the electron beam velocity along the y-axis. z This represents the component of the electron beam velocity along the z-axis, which is the axial direction of the electron beam.
[0021] By implementing the above method, the first tilt angle is determined based on the speed of the electron beam, which enables the first-stage electrode to collect and guide the electron beam more effectively, suppress the peak backflow rate, thereby improving the efficiency and performance of the collecting electrode, and enabling the collecting electrode to simultaneously achieve both low peak backflow rate and high efficiency of deep backflow collecting electrode.
[0022] In one possible implementation, θ1 = 106°, or θ1 = 110°, or θ1 = 113°.
[0023] In one possible implementation, the first tilt angle θ1 and the second tilt angle θ2 satisfy the following conditions:
[0024] The above implementation method can improve the efficiency of the deep back-out collector, reduce electron backflow, and enable the collector to better balance the low peak backflow rate and the high efficiency of the deep back-out collector.
[0025] In a second aspect, a traveling wave tube is provided, which includes the collecting electrode provided by the first aspect of this application and the corresponding feasible embodiments.
[0026] Thirdly, this application provides an electronic device that includes the traveling wave tube provided in the second aspect of this application.
[0027] In one possible implementation, the electronic device includes a radio frequency (RF) unit, and the traveling wave tube is disposed in the RF unit.
[0028] The beneficial effects achieved by the second and third aspects of this application are similar to those of the first aspect of this application and the corresponding feasible implementation methods, and will not be described again. Attached Figure Description
[0029] Figure 1 is a schematic diagram of the architecture of a communication system provided in an embodiment of this application;
[0030] Figure 2 is a schematic diagram of a traveling wave tube provided in an embodiment of this application;
[0031] Figure 3 is a cross-sectional schematic diagram of a collecting electrode provided in an embodiment of this application;
[0032] Figure 4 is a schematic diagram of the voltage distribution of a collecting electrode provided in an embodiment of this application;
[0033] Figure 5 is a cross-sectional schematic diagram of a collecting electrode provided in an embodiment of this application;
[0034] Figure 6 is a cross-sectional schematic diagram of a collecting electrode provided in an embodiment of this application;
[0035] Figure 7 is a cross-sectional schematic diagram of a collecting electrode provided in an embodiment of this application;
[0036] Figure 8 is a cross-sectional schematic diagram of a collecting electrode provided in an embodiment of this application;
[0037] Figure 9 is a schematic diagram of the change in magnetic field value in a transition channel provided in an embodiment of this application;
[0038] Figure 10 is a cross-sectional schematic diagram of another collecting electrode provided in an embodiment of this application;
[0039] Figure 11 is a cross-sectional schematic diagram of another collecting electrode provided in the embodiment of this application;
[0040] Figure 12 is a cross-sectional schematic diagram of another collecting electrode provided in the embodiment of this application;
[0041] Figure 13 is a cross-sectional schematic diagram of another collecting electrode provided in the embodiments of this application.
[0042] Reference numerals in the attached figures: 10: Electron gun; 20: Slow-wave structure; 21: End of slow-wave structure; 211: Transition channel; 30: Collector electrode; 31: First-stage electrode; 311: End of first-stage electrode; 32: Second-stage electrode; 33: Third-stage electrode; 34: Fourth-stage electrode; 35: Fifth-stage electrode; 40: Input energy coupler; 50: Output energy coupler. Detailed Implementation
[0043] The technical solution provided in this application will now be described with reference to the accompanying drawings.
[0044] To facilitate understanding of the embodiments of this application, in this application, "at least one" refers to one or more, and "more than one" refers to two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone, where A and B can be singular or plural. The character " / " generally indicates an "or" relationship between the preceding and following related objects, but does not exclude the possibility of indicating an "and" relationship. The specific meaning can be understood in conjunction with the context. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c can represent: a, b, c; a and b; a and c; b and c; or a and b and c. Here, a, b, and c can be single or multiple.
[0045] The technical solutions provided in this application can be applied to various communication systems, such as: Long Term Evolution (LTE) systems, LTE Frequency Division Duplex (FDD) systems, LTE Time Division Duplex (TDD) systems, sidelink (SL) communication systems, Universal Mobile Telecommunication System (UMTS), Worldwide Interoperability for Microwave Access (WiMAX) communication systems, 5th Generation (5G) mobile communication systems, or new radio access technology (NR). Among these, 5G mobile communication systems can include non-standalone (NSA) and / or standalone (SA) networking. The technical solutions provided in this application can also be applied to future communication systems, etc. This application does not limit these applications.
[0046] Figure 1 is a schematic diagram of the architecture of a communication system provided in an embodiment of this application. Figure 1 shows a schematic diagram of a possible, non-limiting system architecture. As shown in Figure 1, the communication system 100 includes a radio access network (RAN) 10 and a core network (CN) 20. Optionally, the communication system 100 also includes an Internet 30. RAN 10 includes at least one RAN node (110a and 110b in Figure 1, collectively referred to as 110) and at least one terminal (120a-120j in Figure 1, collectively referred to as 120). RAN 10 may also include other RAN nodes, such as wireless relay devices and / or wireless backhaul devices (not shown in Figure 1). Terminal 120 is wirelessly connected to RAN node 110. RAN node 110 is wirelessly or wiredly connected to core network 20. The core network device in core network 20 and RAN node 110 in RAN 10 can be different physical devices, or they can be the same physical device integrating core network logical functions and radio access network logical functions.
[0047] RAN10 can be a cellular system related to the 3rd Generation Partnership Project (3GPP), such as a 5G mobile communication system, or a future-oriented evolution system. RAN10 can also be an open access network (O-RAN or ORAN), a cloud radio access network (CRAN), or a wireless-fidelity (Wi-Fi) system. RAN10 can also be a communication system that integrates two or more of the above systems.
[0048] RAN node 110, sometimes also referred to as access network equipment, RAN entity, or access node, is part of the communication system and helps terminals achieve wireless access. Multiple RAN nodes 110 in communication system 100 can be of the same type or different types. In some scenarios, the roles of RAN node 110 and terminal 120 are relative. For example, network element 120i in Figure 1 can be a helicopter or drone, which can be configured as a mobile base station. For terminals 120j accessing RAN 10 through network element 120i, network element 120i is a base station; but for base station 110a, network element 120i is a terminal. RAN node 110 and terminal 120 are sometimes both referred to as communication devices. For example, network elements 110a and 110b in Figure 1 can be understood as communication devices with base station functions, and network elements 120a-120j can be understood as communication devices with terminal functions.
[0049] In one possible scenario, a RAN node can be a base station, an evolved NodeB (eNodeB), an access point (AP), a transmission reception point (TRP), a next-generation NodeB (gNB), a next-generation base station in a 6G mobile communication system, a base station in a future mobile communication system, or an access node in a WiFi system. A RAN node can be a macro base station (as shown in Figure 1, 110a), a micro base station or indoor station (as shown in Figure 1, 110b), a relay node or donor node, or a radio controller in a CRAN scenario. Optionally, a RAN node can also be a server, wearable device, vehicle, or in-vehicle equipment. For example, the access network equipment in vehicle-to-everything (V2X) technology can be a roadside unit (RSU).
[0050] In another possible scenario, multiple RAN nodes collaborate to assist the terminal in achieving wireless access, with each RAN node performing a portion of the base station's functions. For example, RAN nodes can be central units (CUs), distributed units (DUs), CU-control plane (CPs), CU-user plane (UPs), or radio units (RUs), etc. CUs and DUs can be separate entities or included in the same network element, such as a baseband unit (BBU). RUs can be included in radio frequency equipment or radio frequency units, such as remote radio units (RRUs), active antenna units (AAUs), or remote radio heads (RRHs).
[0051] In different systems, CU (or CU-CP and CU-UP), DU, or RU may have different names, but those skilled in the art will understand their meaning. For example, in an ORAN system, CU can also be called O-CU (open CU), DU can also be called O-DU, CU-CP can also be called O-CU-CP, CU-UP can also be called O-CU-UP, and RU can also be called O-RU. For ease of description, this application uses CU, CU-CP, CU-UP, DU, and RU as examples. Any of the units among CU (or CU-CP, CU-UP), DU, and RU in this application can be implemented through software modules, hardware modules, or a combination of software and hardware modules.
[0052] A terminal can also be called a terminal device, user equipment (UE), mobile station, mobile terminal, etc. Terminals can be widely used in various scenarios, such as device-to-device (D2D), vehicle-to-everything (V2X) communication, machine-type communication (MTC), Internet of Things (IoT), virtual reality, augmented reality, industrial control, autonomous driving, telemedicine, smart grids, smart furniture, smart offices, smart wearables, smart transportation, smart cities, etc. Terminals can be mobile phones, tablets, computers with wireless transceiver capabilities, wearable devices, vehicles, drones, helicopters, airplanes, ships, robots, robotic arms, smart home devices, etc.
[0053] In this application embodiment, the terminal and network device can be hardware devices, or software functions running on dedicated hardware, or software functions running on general-purpose hardware, such as virtualization functions instantiated on a platform (e.g., a cloud platform), or entities that include dedicated or general-purpose hardware devices and software functions. This application does not limit the specific form of the terminal and network device.
[0054] A traveling wave tube is a type of vacuum tube that amplifies electromagnetic waves (such as microwaves) and can be used in fields such as communications, radar, satellite communications, and electronic warfare.
[0055] The working principle of a traveling wave tube (TWT) is based on the interaction between an electron beam and an electromagnetic wave (traveling wave). When the electron beam passes through the TWT, it is affected by the input electromagnetic wave, resulting in velocity modulation and energy exchange between the electron beam and the electromagnetic wave. This interaction leads to minute changes in the speed and density of the electron beam, thereby amplifying the signal. Specifically, when an electromagnetic wave signal enters the slow-wave structure, it forms an electromagnetic wave field during its journey. This electromagnetic wave field interacts with the electron beam, and the electron beam continuously transfers kinetic energy to the electromagnetic wave field. Because the electromagnetic wave field and the electron beam continuously interact throughout the slow-wave circuit, electromagnetic wave signal amplification is achieved.
[0056] Based on their function, traveling wave tubes can be classified into broadband traveling wave tubes, high-power traveling wave tubes, dual-mode traveling wave tubes, phase-coherent traveling wave tubes, satellite communication traveling wave tubes, low-noise traveling wave tubes, phase-modulated traveling wave tubes, and frequency storage traveling wave tubes, etc.
[0057] Based on their structural characteristics, traveling wave tubes (TWTs) can be classified into helical TWTs, coupled-cavity TWTs, and microstrip TWTs. Helical TWTs, with their broadband characteristics, can be used in communication and radar systems. Coupled-cavity TWTs, due to their high peak power, high average power output, and high efficiency, are suitable for fire control, search and surveillance radars. Microstrip TWTs, with their small size and light weight, are suitable for microwave and satellite communication applications.
[0058] Optionally, the traveling wave tube may structurally include an electron gun, a slow-wave structure, an attenuator, an energy coupler, a focusing system, and a collector electrode. Among these:
[0059] An electron gun can generate an electron beam that meets design requirements.
[0060] Slow-wave structures interact with electrons through periodic electromagnetic fields, causing electron energy to propagate in the form of traveling waves. The task of a slow-wave structure is to reduce the phase velocity of the electromagnetic wave, allowing for sufficient energy exchange between the electrons and the electromagnetic wave, thus amplifying the signal. Optionally, the aforementioned slow-wave structures may include helical structures and coupled-cavity structures.
[0061] A focusing system can maintain the electron beam in the desired shape, ensuring that the electron beam can pass smoothly through the slow-wave structure and interact effectively with the electromagnetic field.
[0062] The electromagnetic wave signal to be amplified enters the slow-wave structure through the input energy coupler and travels along the slow-wave structure. Electrons exchange energy with the traveling electromagnetic wave field, amplifying the electromagnetic wave signal. The amplified electromagnetic wave signal is then sent to the load through the output energy coupler.
[0063] Good impedance matching is required between the input / output energy couplers and the slow-wave structure, as well as between different parts of the slow-wave structure. Poor impedance matching can cause electromagnetic wave reflection, which in turn induces feedback and leads to parasitic oscillations within the traveling-wave tube. To avoid these oscillations, attenuators can be placed at specific locations within the slow-wave structure. These attenuators can be constructed from lossy coatings or lossy ceramic sheets and are used to adjust the degree of signal attenuation.
[0064] The collector electrode is used to collect electrons that have already exchanged energy with the electromagnetic field. After completing its interaction with the microwave field, the electron beam exits the slow-wave structure and strikes the collector electrode.
[0065] For example, referring to Figure 2, which is a schematic diagram of a traveling wave tube provided in an embodiment of this application.
[0066] Optionally, the traveling wave tube mentioned above includes an electron gun 10, a slow wave structure 20, a collector 30, an input energy coupler 40, and an output energy coupler 50.
[0067] In some embodiments, the electron gun 10 generates and accelerates a beam of electrons, which then enter the slow-wave structure 20. In the slow-wave structure 20, the velocity of the electron beam is modulated to match the phase velocity of the input electromagnetic wave signal (introduced via the input energy coupler 40), thereby achieving effective interaction between the electrons and the electromagnetic wave signal. This interaction results in the amplification of the electromagnetic wave signal, while the electrons lose some energy. The amplified electromagnetic wave signal is then extracted via the output energy coupler 50 for subsequent use. Simultaneously, the energy-depleted electrons are captured by the collecting electrode 30 and converted into heat energy.
[0068] Currently, while traveling wave tubes have demonstrated unique advantages in signal amplification in the field of communications, they also face some technical challenges.
[0069] For example, the overall efficiency of a traveling wave tube can be determined by thermal power dissipation, slow wave intercept current loss, line loss, collector power recovery, collector heat dissipation, etc., and its overall efficiency η ov The formula can be simplified as follows:
[0070] Where, η e For slow-wave electron efficiency, η coll To achieve extremely high collection efficiency.
[0071] As can be seen from the above formula, under the condition of a certain slow-wave electron efficiency, the total efficiency of the traveling wave tube depends on the collector efficiency. Therefore, in order to make the traveling wave tube more efficient, the collector efficiency can be improved.
[0072] In some embodiments, to improve the collector efficiency, the collector can employ a multi-stage voltage reduction technique, utilizing multiple stages of sequentially decreasing voltage electrodes to cause electrons to undergo multiple deceleration stages as they reach the collector. Each stage electrode can be designed with an appropriate potential drop to ensure that electrons gradually release their remaining energy as they pass through each stage. This energy is then collected and fed back to the power source, thereby improving the overall system efficiency.
[0073] In practical applications in the field of communications, there are two states: peak power output and deep back-off power output. During peak power output, the traveling wave tube (TWT) needs to ensure the lowest possible back-off rate to maintain efficient energy conversion and reduce unnecessary energy loss. During deep back-off power output, the TWT requires a higher collector efficiency to maximize the recovery of electron energy and reduce heat dissipation while reducing output power.
[0074] However, existing traveling wave tube collector designs often struggle to achieve optimal performance in both states simultaneously. Specifically, when the collector design focuses on improving peak collector efficiency or reducing peak backflow rate, it often exhibits lower collector efficiency in deep backflow state; conversely, if the goal is to improve deep backflow collector efficiency, a higher backflow rate may exist in peak state.
[0075] For example, in some implementations, the inlet size of each collector electrode can be determined based on the slow wave interface size, the radial and / or axial velocity of the electron beam, and the magnetic field in the transition region, and the outer diameter and length of each collector electrode can be determined in combination with the power consumption, heat dissipation capacity and system constraints of each electrode.
[0076] For example, referring to Figure 3, which is a cross-sectional schematic diagram of a collecting electrode provided in an embodiment of this application.
[0077] In some embodiments, the above-mentioned collecting electrode includes four stages of electrodes with successively decreasing voltages, wherein the voltage U1 of the first stage electrode 31, the voltage U2 of the second stage electrode 32, the voltage U3 of the third stage electrode 33, and the voltage U4 of the fourth stage electrode 34 satisfy: U1 < U2 < U3 < U4.
[0078] In some embodiments, the voltages of each stage of the collector electrode can be represented by the inflection point voltages of the peak / backoff energy spectrum. For example, refer to Figure 4, which is a schematic diagram of the voltage distribution of a collector electrode provided in an embodiment of this application.
[0079] Simulations reveal that the lowest peak backflow rate of the aforementioned collector is only 16.22%, while the highest efficiency of the deep backflow collector can reach 90.89%. Therefore, only the high efficiency of the deep backflow collector can be achieved, but not the low peak backflow rate.
[0080] In some embodiments, algorithms can be used to optimize the multimodal energy spectrum voltage, by incorporating the energy spectrum corresponding to different powers into the algorithm and selecting the equilibrium point as the voltage of each stage of the collecting electrode.
[0081] For example, energy spectrum data at K different power levels can be obtained. For each energy spectrum, its corresponding collector efficiency is calculated. The minimum collector efficiency *a* and the average collector efficiency *b* of the K energy spectra are determined. Further, the maximum value is taken. The efficiency of the collector corresponding to the kth energy spectrum is approximately equal to A. The voltage distribution corresponding to it is taken as the voltage of each stage of the collector electrode, which also satisfies U1 < U2 < U3 < U4.
[0082] Simulations reveal that the peak reflux rate of the aforementioned collector can reach as low as 8.3%, while the efficiency of the deep back-out collector can only reach 80.37%. Therefore, only the low peak reflux rate requirement can be met, and the high efficiency requirement of the deep back-out collector cannot be satisfied.
[0083] To address the aforementioned technical issues, this application provides a collector electrode. By redesigning the electrodes in the collector electrode, it is possible to simultaneously achieve both low peak backflow rate and high efficiency of deep backflow collector electrode.
[0084] The collection poles provided in the various embodiments of this application will now be described in detail with reference to the accompanying drawings.
[0085] Referring to Figure 5, which is a cross-sectional schematic diagram of a collecting electrode provided in an embodiment of this application.
[0086] In some embodiments, the traveling wave tube includes a slow-wave structure and a collector electrode; the end 21 of the slow-wave structure includes a transition channel 211 corresponding to the electron beam. The transition channel 211 can guide the electron beam to smoothly transition from the slow-wave structure to the collector electrode, ensuring that the electron beam can be successfully collected by the collector electrode after energy exchange.
[0087] Within the transition channel 211, the electron beam is subjected to a combination of forces, including the Lorentz force, electric field force, centrifugal force, and space charge force. These forces can cause the electron beam to be in a dynamic divergence process.
[0088] In some embodiments, the collecting electrode comprises multiple stages of electrodes with progressively decreasing voltages, forming a decelerating electric field. When high-energy electrons enter this electric field, they gradually decelerate and are eventually collected by the electrodes at each stage. For ease of understanding, only the first-stage electrode 31 of the collecting electrode is shown in Figure 5. In this embodiment, there are no limitations on the number of electrodes in the collecting electrode or the shape of other electrodes.
[0089] In some embodiments, the end 311 of the first stage electrode 31 in the multi-stage sequentially decreasing electrode is located within the transition channel 211.
[0090] It is understandable that by extending the end 311 of the first-stage electrode 31 into the transition channel 211, the electron beam can immediately enter the deceleration electric field of the collector after leaving the slow-wave structure, thereby achieving efficient energy recovery.
[0091] The collector provided in this application embodiment extends the end of the first-stage electrode of the collector into the transition channel at the end of the slow-wave structure, so that the electron beam can immediately enter the deceleration electric field of the collector after leaving the slow-wave structure. This can suppress the peak backflow rate and achieve efficient energy recovery, enabling the collector to simultaneously achieve both low peak backflow rate and high efficiency of deep backflow collector.
[0092] In some embodiments, the length L of the end 311 of the first-stage electrode 31 extending into the transition channel 211 satisfies the following condition: L0 > L ≥ 0.05L0
[0093] Where L0 is the length of transition channel 211.
[0094] The above conditions ensure that the length L of the end 311 of the first-stage electrode 31 extending into the transition channel 211 is neither too short (to effectively guide the electron beam into the deceleration electric field of the collector) nor too long (to avoid excessive interference to the electromagnetic field distribution at the end of the slow-wave structure).
[0095] Optionally, the specific value of the aforementioned insertion length L can be determined by considering multiple factors, including the energy distribution of the electron beam, the characteristics of the slow-wave structure, the design requirements of the collector electrode, and the overall system performance objectives.
[0096] Referring to Figure 6, which is a cross-sectional schematic diagram of a collecting electrode provided in an embodiment of this application.
[0097] In some embodiments, the collecting electrode may further include a second electrode 32, the end of which is inclined at a second tilt angle θ2 toward the cavity of the collecting electrode along the axial direction of the electron beam.
[0098] It is understood that, in addition to the first-stage electrode 31 and the second-stage electrode 32 shown in Figure 6, the above-mentioned collecting electrode may also include other electrodes. In the embodiments of this application, there are no restrictions on the number of electrodes in the above-mentioned collecting electrode or the shape of other electrodes.
[0099] The end of the second-stage electrode 32 extends into the cavity of the collecting electrode at a second tilt angle θ2 along the axis of the electron beam, which can improve the electron collection efficiency of the second-stage electrode 32 and reduce the number of backflowing electrons.
[0100] Optionally, the second tilt angle θ2 satisfies the following condition:
[0101] Because the electron beam has a wide energy and emission angle distribution under peak operating conditions, the tilted end of the second-stage electrode 32 can more effectively guide these high-speed electrons, allowing them to transition more smoothly to the next-stage electrode or return to the previous-stage electrode, thereby reducing the number of backflowing electrons.
[0102] Under deep back-off conditions, the energy of the electron beam is more concentrated and the divergence angle is smaller. The tilted end of the second-stage electrode 32 can better capture these high-energy, low-divergence electrons, making them easier to be captured by the collecting electrode, thereby improving the collection efficiency.
[0103] The collector electrode provided in this application embodiment is designed such that the end of the second-stage electrode is tilted towards the cavity of the collector electrode at a certain angle along the axis of the electron beam, which can enable the collector electrode to better balance the low peak backflow rate and the high efficiency of the deep backflow collector electrode.
[0104] Referring to Figure 7, which is a cross-sectional schematic diagram of a collecting electrode provided in an embodiment of this application.
[0105] In some embodiments, the collecting electrode may further include a third electrode 33, the end of which is inclined at a third tilt angle θ3 toward the cavity of the collecting electrode along the axial direction of the electron beam.
[0106] It is understood that, in addition to the first-stage electrode 31, the second-stage electrode 32, and the third-stage electrode 33 shown in Figure 7, the above-mentioned collecting electrode may also include other electrodes. In the embodiments of this application, there are no restrictions on the number of electrodes in the above-mentioned collecting electrode or the shape of other electrodes.
[0107] The end of the third electrode 33 extends into the cavity of the collecting electrode at a third tilt angle θ3 along the axis of the electron beam, which can improve the electron collection efficiency of the third electrode 33 and reduce the number of backflowing electrons.
[0108] Optionally, the third tilt angle θ3 satisfies the following condition:
[0109] Similarly, since the electron beam has a wider energy and emission angle distribution under peak operating conditions, the tilted end of the third electrode 33 can more effectively guide these high-speed electrons, allowing them to transition more smoothly to the next electrode or return to the first two electrodes, thereby reducing the number of backflowing electrons.
[0110] Under deep back-off conditions, the energy of the electron beam is more concentrated and the divergence angle is smaller. The tilted end of the third electrode 33 can capture these high-energy, low-divergence electrons, making them easier to be captured by the collecting electrode, thereby improving the collection efficiency.
[0111] The collector electrode provided in this application embodiment is designed such that the end of the third-stage electrode is tilted towards the cavity of the collector electrode at a certain angle along the axis of the electron beam, which can further enable the collector electrode to better balance the low peak backflow rate and the high efficiency of the deep backflow collector electrode.
[0112] For example, referring to Figure 8, which is a cross-sectional schematic diagram of a collecting electrode provided in an embodiment of this application.
[0113] In some embodiments, the above-mentioned collecting electrode may further include a fourth electrode 34 and a fifth electrode 35. In this embodiment, the shape of the fourth electrode 34 and the fifth electrode 35 is not limited.
[0114] In some implementations, the magnetic field value Bz (in Gs) within the transition channel can be determined based on the axial position (in mm) within the transition channel.
[0115] Referring to Figure 9, which is a schematic diagram of the change of magnetic field value in a transition channel provided in an embodiment of this application.
[0116] In some implementations, the size of each electrode in the collecting electrode can be determined based on factors such as interface size, heat dissipation capacity of each electrode, and particle velocity.
[0117] Optionally, in some embodiments, the length of the transition channel L0 = 6 mm, the height of the first-stage electrode 31 L1 = 4 mm, the height of the second-stage electrode 32 L2 = 3.5 mm, the height of the third-stage electrode 33 L3 = 3 mm, the height of the fourth-stage electrode 34 L4 = 8 mm, the height of the fifth-stage electrode 35 L5 = 20 mm, the outer diameter of each electrode R = 20 mm, the inner diameter of the first-stage electrode 31 r1 = 2.0 mm, the inner diameter of the second-stage electrode 32 r2 = 3 mm, the inner diameter of the third-stage electrode 33 r3 = 5 mm, the inner diameter of the fourth-stage electrode 34 r4 = 7 mm, and the inner diameter of the fifth-stage electrode 35 r5 = 12 mm.
[0118] Optionally, the second tilt angle θ2 = 110° and the third tilt angle θ3 = 120°.
[0119] Optionally, the length L = 0.05L = 0.3mm of the end of the first-stage electrode 31 extending into the transition channel.
[0120] In some implementations, the inflection point voltage can be selected as the voltage of each stage of the collector electrode, from smallest to largest, based on the peak value and / or backoff energy spectrum. Specifically, the voltages U1 of the first stage electrode 31, U2 of the second stage electrode 32, U3 of the third stage electrode 33, U4 of the fourth stage electrode 34, and U5 of the fifth stage electrode 35 satisfy the following condition: U1 < U2 < U3 < U4 < U5.
[0121] In some implementations, the above-mentioned collector can be simulated using peak and fallback interface files to obtain simulation results.
[0122] Simulation results show that, for the collector provided in this embodiment, the peak collector efficiency is 66.77% and the return rate is 10%, while the deep back-off collector efficiency is 91.15% and the return rate is 0.29%, simultaneously satisfying both the low peak return rate and the high deep back-off collector efficiency. This meets the performance requirements of a communication system where the peak return rate is less than or equal to 10% and the deep back-off collector efficiency is greater than 90%.
[0123] Optionally, in other embodiments, the length L = 0.13L = 0.78mm of the end of the first electrode 31 extending into the transition channel.
[0124] Simulations of the aforementioned collector show that its peak collector efficiency is 68.09% with a return rate of 8.71%, and its deep back-off collector efficiency is 91.18% with a return rate of 0.24%. This simultaneously satisfies both the low peak return rate and high deep back-off collector efficiency requirements. This aligns with the performance requirements of a communication system where the peak return rate is less than or equal to 10% and the deep back-off collector efficiency is greater than 90%.
[0125] Optionally, in some other embodiments, the length L = 0.2L = 1.2 mm for the end of the first electrode 31 extending into the transition channel.
[0126] Simulations of the aforementioned collector show that its peak collector efficiency is 69.58% and its return current rate is 6.73%, while the deep back-off collector efficiency is 91.36% and its return current rate is 0.1%. This simultaneously satisfies both the low peak return current rate and the high deep back-off collector efficiency. This meets the performance requirements of a communication system where the peak return current rate is less than or equal to 10% and the deep back-off collector efficiency is greater than 90%.
[0127] Referring to Figure 10, which is a cross-sectional schematic diagram of another collecting electrode provided in an embodiment of this application.
[0128] In some embodiments, the traveling wave tube includes a slow-wave structure and a collector electrode; the end 21 of the slow-wave structure includes a transition channel corresponding to the electron beam. This transition channel can guide the electron beam to smoothly transition from the slow-wave structure to the collector electrode, ensuring that the electron beam can be successfully collected after energy exchange.
[0129] Within the aforementioned transition channel, the electron beam is subjected to the combined action of multiple forces, including the Lorentz force, electric field force, centrifugal force, and space charge force. These forces can cause the electron beam to be in a dynamic divergence process.
[0130] In some embodiments, the collecting electrode comprises multiple stages of electrodes with progressively decreasing voltages, forming a decelerating electric field. When high-energy electrons enter this electric field, they gradually decelerate and are eventually collected by each stage of the electrodes. For ease of understanding, only the first stage electrode 31 of the collecting electrode is shown in Figure 10. In this embodiment, there are no limitations on the number of electrodes in the collecting electrode or the shape of other electrodes.
[0131] In some embodiments, the end of the first electrode 31 is inclined at a first tilt angle θ1 toward the cavity of the collecting electrode along the axial direction of the electron beam. The first tilt angle θ1 can be determined according to the velocity of the electron beam.
[0132] Because the electron beam has a wide energy and emission angle distribution under peak operating conditions, the tilted end of the first-stage electrode 31 can more effectively guide these high-speed electrons, allowing them to transition more smoothly to the next-stage electrode or return to the first-stage electrode, thereby reducing the number of backflowing electrons.
[0133] Under deep back-out conditions, the energy of the electron beam is more concentrated and the divergence angle is smaller. The tilted end of the first-stage electrode 31 can better capture the small number of high-energy, low-divergence electrons that return, making them easier to be captured by the collecting electrode, thereby improving the collection efficiency.
[0134] In this embodiment, determining the first tilt angle based on the electron beam velocity enables the first-stage electrode to collect and guide the electron beam more effectively, suppressing the peak backflow rate, thereby improving the efficiency and performance of the collecting electrode, and enabling the collecting electrode to simultaneously achieve both low peak backflow rate and high efficiency of deep backflow collecting electrode.
[0135] In some embodiments, the first tilt angle θ1 satisfies the following condition:
[0136] or,
[0137] Among them, v x v represents the component of the electron beam velocity along the x-axis. zv represents the component of the electron beam velocity along the y-axis. z This represents the component of the electron beam velocity along the z-axis, which is the axial direction of the electron beam.
[0138] Alternatively, in one possible implementation, θ1 = 106°, or θ1 = 110°, or θ1 = 113°.
[0139] Referring to Figure 11, which is a cross-sectional schematic diagram of another collecting electrode provided in an embodiment of this application.
[0140] In some embodiments, the collecting electrode may further include a second electrode 32, the end of which is inclined at a second tilt angle θ2 toward the cavity of the collecting electrode along the axial direction of the electron beam.
[0141] It is understood that, in addition to the first-stage electrode 31 and the second-stage electrode 32 shown in Figure 11, the above-mentioned collecting electrode may also include other electrodes. In the embodiments of this application, there are no restrictions on the number of electrodes in the above-mentioned collecting electrode or the shape of other electrodes.
[0142] The end of the second-stage electrode 32 extends into the cavity of the collecting electrode at a second tilt angle θ2 along the axis of the electron beam, which can improve the electron collection efficiency of the second-stage electrode 32 and reduce the number of backflowing electrons.
[0143] Optionally, the second tilt angle θ2 satisfies the following condition:
[0144] Because the electron beam has a wide energy and emission angle distribution under peak operating conditions, the tilted end of the second-stage electrode 32 can more effectively guide these high-speed electrons, allowing them to transition more smoothly to the next-stage electrode or return to the previous electrode, thereby reducing the number of backflowing electrons.
[0145] Under deep back-off conditions, the energy of the electron beam is more concentrated and the divergence angle is smaller. The tilted end of the second-stage electrode 32 can better capture these high-energy, low-divergence electrons, making them easier to be captured by the collecting electrode, thereby improving the collection efficiency.
[0146] The collector electrode provided in this application embodiment is designed such that the end of the second-stage electrode is tilted towards the cavity of the collector electrode at an angle θ2 along the axis of the electron beam, and θ2 < θ1. This can improve the efficiency of the deep back-out collector electrode, reduce the number of backflow electrons, and enable the collector electrode to better balance the low peak backflow rate and the high efficiency of the deep back-out collector electrode.
[0147] Referring to Figure 12, which is a cross-sectional schematic diagram of another collecting electrode provided in an embodiment of this application.
[0148] In some embodiments, the collecting electrode may further include a third electrode 33, the end of which is inclined at a third tilt angle θ3 toward the cavity of the collecting electrode along the axial direction of the electron beam.
[0149] It is understood that, in addition to the first-stage electrode 31, the second-stage electrode 32, and the third-stage electrode 33 shown in Figure 12, the above-mentioned collecting electrode may also include other electrodes. In the embodiments of this application, there are no restrictions on the number of electrodes in the above-mentioned collecting electrode or the shape of other electrodes.
[0150] The end of the third electrode 33 extends into the cavity of the collecting electrode at a third tilt angle θ3 along the axis of the electron beam, which can improve the electron collection efficiency of the third electrode 33 and reduce the number of backflowing electrons.
[0151] Optionally, the third tilt angle θ3 satisfies the following condition:
[0152] Similarly, since the electron beam has a wider energy and emission angle distribution under peak operating conditions, the tilted end of the third electrode 33 can more effectively guide these high-speed electrons, allowing them to transition more smoothly to the next electrode or return to the first two electrodes, thereby reducing the number of backflowing electrons.
[0153] Under deep back-off conditions, the energy of the electron beam is more concentrated and the divergence angle is smaller. The tilted end of the third electrode 33 can capture these high-energy, low-divergence electrons, making them easier to be captured by the collecting electrode, thereby improving the collection efficiency.
[0154] The collector electrode provided in this application embodiment is designed such that the end of the third-stage electrode is tilted towards the cavity of the collector electrode at a certain angle along the axis of the electron beam, which can further enable the collector electrode to better balance the low peak backflow rate and the high efficiency of the deep backflow collector electrode.
[0155] For example, referring to Figure 13, which is a cross-sectional schematic diagram of another collecting electrode provided in an embodiment of this application.
[0156] In some embodiments, the above-mentioned collecting electrode may further include a fourth electrode 34 and a fifth electrode 35. In this embodiment, the shape of the fourth electrode 34 and the fifth electrode 35 is not limited.
[0157] In some implementations, the magnetic field value Bz (in Gs) within the transition channel can be determined based on the axial position (in mm) within the transition channel. See Figure 9 for details; further elaboration is omitted in this embodiment.
[0158] In some implementations, the size of each electrode in the collecting electrode can be determined based on factors such as interface size, heat dissipation capacity of each electrode, and particle velocity.
[0159] Optionally, in some embodiments, the length of the transition channel L0 = 6 mm, the height of the first-stage electrode 31 L1 = 2.5 mm, the height of the second-stage electrode 32 L2 = 3 mm, the height of the third-stage electrode 33 L3 = 3 mm, the height of the fourth-stage electrode 34 L4 = 3 mm, the height of the fifth-stage electrode 35 L5 = 20 mm, the outer diameter of each electrode R = 20 mm, the inner diameter of the first-stage electrode 31 r1 = 2 mm, the inner diameter of the second-stage electrode 32 r2 = 3 mm, the inner diameter of the third-stage electrode 33 r3 = 5 mm, the inner diameter of the fourth-stage electrode 34 r4 = 7 mm, and the inner diameter of the fifth-stage electrode 35 r5 = 12 mm.
[0160] Optionally, the first tilt angle θ1 = 106°, the second tilt angle θ2 = 102°, and the third tilt angle θ3 = 101°.
[0161] In some implementations, the inflection point voltage can be selected as the voltage of each stage of the collector electrode, from smallest to largest, based on the peak value and / or backoff energy spectrum. Specifically, the voltages U1 of the first stage electrode 31, U2 of the second stage electrode 32, U3 of the third stage electrode 33, U4 of the fourth stage electrode 34, and U5 of the fifth stage electrode 35 satisfy the following condition: U1 < U2 < U3 < U4 < U5.
[0162] In some implementations, the above-mentioned collector can be simulated using peak and fallback interface files to obtain simulation results.
[0163] Simulation results show that, for the collector provided in this embodiment, the peak collector efficiency is 66.5% and the return current rate is 9.98%, while the deep back-off collector efficiency is 90.0% and the return current rate is 1.46%. This simultaneously satisfies both the low peak return current rate and the high deep back-off collector efficiency. This meets the performance requirements of a communication system where the peak return current rate is less than or equal to 10% and the deep back-off collector efficiency is greater than or equal to 90%.
[0164] Optionally, in other embodiments, the first tilt angle θ1 = 110°, the second tilt angle θ2 = 102°, and the third tilt angle θ3 = 101°.
[0165] Simulations of the aforementioned collector show that its peak collector efficiency is 71.91% with a return rate of 3.2%, and its deep back-off collector efficiency is 89.66% with a return rate of 1.8%. This simultaneously satisfies both the low peak return rate and high deep back-off collector efficiency requirements. This aligns with the performance requirements of a communication system where the peak return rate is less than or equal to 10% and the deep back-off collector efficiency is greater than 89%.
[0166] Optionally, in other embodiments, the first tilt angle θ1 = 113°, the second tilt angle θ2 = 102°, and the third tilt angle θ3 = 101°.
[0167] Simulations of the aforementioned collector show that its peak collector efficiency is 72.23% with a return rate of 2.91%, and its deep back-off collector efficiency is 89.11% with a return rate of 2.38%. This satisfies both the low peak return rate and high deep back-off collector efficiency requirements. This aligns with the performance requirements of a communication system where the peak return rate is less than or equal to 10% and the deep back-off collector efficiency is greater than 89%.
[0168] Based on the collecting electrode provided in the above embodiments, this application also provides a traveling wave tube, which may include the collecting electrode provided in the above embodiments, and will not be described again in this application.
[0169] In some embodiments, this application also provides an electronic device including the aforementioned traveling wave tube.
[0170] In some embodiments, the electronic device is a radio frequency unit.
[0171] Optionally, the above-mentioned electronic device includes a radio frequency unit, and the traveling wave tube is disposed in the radio frequency unit.
[0172] The aforementioned radio frequency (RF) unit is used to process RF signals, and it includes functions such as signal reception, amplification, modulation, and demodulation. Placing a traveling wave tube (TWT) within the RF unit can fully utilize its amplification characteristics and improve the overall performance of the electronic device.
[0173] Optionally, the aforementioned electronic device may be a network device, such as a RAN device, etc., and this application embodiment does not impose any restrictions.
[0174] In the several embodiments provided in this application, it should be understood that the disclosed device can be implemented in other ways. The devices described above as separate components may or may not be physically separate.
[0175] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them; although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.
Claims
1. A collecting electrode, characterized in that, The invention is applied to a traveling wave tube, which includes a slow-wave structure and a collecting electrode; the end of the slow-wave structure includes a transition channel corresponding to the electron beam; the collecting electrode includes multiple electrodes with sequentially decreasing voltage. The end of the first-stage electrode in the multi-stage sequentially decreasing voltage electrode is located within the transition channel; Alternatively, the end of the first-stage electrode is tilted into the cavity of the collecting electrode at a first tilt angle along the axial direction of the electron beam, the first tilt angle being determined according to the velocity of the electron beam.
2. The collecting electrode according to claim 1, characterized in that, The end of the second-stage electrode in the multi-stage sequentially depressurized electrode is inclined at a second tilt angle θ2 toward the cavity of the collecting electrode along the axis of the electron beam.
3. The collecting electrode according to claim 2, characterized in that, The end of the first-stage electrode is located within the transition channel, and the length L of the end of the first-stage electrode extending into the transition channel satisfies the following condition: L0>L≥0.05L0 Where L0 is the length of the transition channel.
4. The collecting electrode according to claim 3, characterized in that, L = 0.05L0, or L = 0.13L0, or L = 0.2L0.
5. The collecting electrode according to any one of claims 2 to 4, characterized in that, The second tilt angle θ2 satisfies the following condition:
6. The collecting electrode according to claim 2, characterized in that, The end of the first-stage electrode is inclined at a first tilt angle into the cavity of the collecting electrode along the axial direction of the electron beam, and the first tilt angle θ1 satisfies the following condition: or, Among them, v x v represents the component of the electron beam velocity along the x-axis. z v represents the component of the electron beam's velocity along the y-axis. z This represents the component of the electron beam's velocity along the z-axis, where the z-axis is the axial direction of the electron beam.
7. The collecting electrode according to claim 6, characterized in that, θ1 = 106°, or θ1 = 110°, or θ1 = 113°.
8. The collecting electrode according to claim 6 or 7, characterized in that, The first tilt angle θ1 and the second tilt angle θ2 satisfy the following conditions:
9. A traveling wave tube, characterized in that, The traveling wave tube includes the collector electrode as described in any one of claims 1 to 8.
10. An electronic device, characterized in that, The electronic device includes the traveling wave tube of claim 9.
11. The electronic device according to claim 10, characterized in that, The electronic device includes a radio frequency unit, and the traveling wave tube is disposed in the radio frequency unit.