Semiconductor reaction chamber and semiconductor film deposition apparatus
By setting up air blowing and cooling circulation pipelines in the semiconductor reaction chamber, the problem of process by-product accumulation in the gaps was solved, and the heat dissipation effect of the spray plate and heating plate and the uniformity of thin film deposition were improved.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- JIANGSU MICROVIA NANO EQUIP TECH CO LTD
- Filing Date
- 2025-12-26
- Publication Date
- 2026-07-02
Smart Images
Figure CN2025146105_02072026_PF_FP_ABST
Abstract
Description
A semiconductor reaction chamber and a semiconductor coating device Technical Field
[0001] This application relates to the field of semiconductor technology, specifically to a semiconductor reaction chamber and semiconductor coating equipment. Background Technology
[0002] Currently, atomic layer deposition (ALD) coating technology can introduce two or more process gases separately into the semiconductor reaction chamber, so that each process gas undergoes a fully saturated surface chemical reaction on the substrate surface and is deposited on the substrate surface in the form of a single atomic film.
[0003] In the process of implementing the embodiments of this disclosure, at least the following problems were found in the related art:
[0004] In existing semiconductor coating equipment, gaps exist between the heating plate and the ceramic ring, as well as between the spray plate and the extraction ring. As the coating process is repeated, process gases move between these gaps, causing process byproducts to adhere to the edges of both the spray plate and the heating plate. Over time, this accumulation of byproducts leads to reduced heat dissipation from the spray plate and the heating plate.
[0005] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this application, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention
[0006] To provide a basic understanding of some aspects of the disclosed embodiments, a brief summary is given below. This summary is not intended as a general commentary, nor is it intended to identify key / important components or describe the scope of protection of these embodiments, but rather as a prelude to the detailed description that follows.
[0007] This disclosure provides a semiconductor reaction chamber and a semiconductor coating apparatus to reduce the accumulation of byproducts after long-term process and improve the heat dissipation effect of the spray plate and heating plate.
[0008] In some embodiments, the semiconductor reaction chamber includes a cavity body and a chamber formed within the cavity body. A spray plate, a heating plate, a vacuum ring, and a ceramic ring are disposed within the chamber body. A first component gap exists between the spray plate and the vacuum ring, and a second component gap exists between the heating plate and the ceramic ring. The chamber also includes an air blowing pipe, which comprises:
[0009] A gas inflow pipe is installed inside the side wall of the cavity and connected to an external gas source, used to introduce purge gas from the external gas source into the purge pipe.
[0010] The main air blowing pipe is located inside the side wall of the cavity. One end of the main air blowing pipe is located at the top of the spray plate and is connected to the gas inflow pipe to obtain the purging gas. The other end is located at the bottom of the ceramic ring. A first air blowing port is provided on the main air blowing pipe facing the gap between the first components so that the purging gas is blown into the gap between the first components through the first air blowing port.
[0011] A branch blowing pipe has one end connected to the main blowing pipe for obtaining purge gas, and the other end extends along the bottom of the ceramic ring and forms a second blowing port on the ceramic ring facing the gap of the second component, so that the purge gas is blown into the gap of the second component through the second blowing port.
[0012] Optionally, the number of first air outlets is multiple, arranged in a ring along the edge region of the gap between the first components, so that the purging gas is blown evenly to the bottom of the spray plate;
[0013] The second air inlet is multiple in number and arranged in a ring along the edge region of the gap between the second components, so that the blowing gas is evenly blown to the bottom of the heating plate.
[0014] Optionally, the semiconductor reaction chamber further includes:
[0015] The flow-blocking element has a centrally recessed structure and is located at the bottom of the chamber and below the heating plate. The sidewall of the flow-blocking element is adjacent to the sidewall of the ceramic ring and spaced apart. The top of the flow-blocking element is adjacent to the bottom of the heating plate and spaced apart.
[0016] Optionally, the purging gas forms a first fluid passage between the spray plate and the suction ring via a gas inlet pipe, a main blowing pipe and a first blowing port, so as to purge the process by-products accumulated at the edge of the spray plate.
[0017] The purging gas, via a gas inlet pipe, a main purging pipe, a branch purging pipe, and a second purging port, forms a second fluid passage between the ceramic ring and the flow-blocking element to purge the process byproducts accumulated at the edge of the heating plate.
[0018] Optionally, the semiconductor reaction chamber further includes:
[0019] A cooling circulation pipe is provided in the air blowing pipe and extends to the edge region of the gap between the first component and the edge region of the gap between the second component, for surrounding the spray plate and the heating plate, so that the coolant in the cooling circulation pipe circulates along the edge of the spray plate and the edge of the heating plate.
[0020] Optionally, the cooling circulation pipeline includes:
[0021] The main circulation pipeline has one end laid along the gas inflow pipeline of the blowing pipeline, and the other end extends through the main blowing pipeline of the blowing pipeline to the branch blowing pipeline of the blowing pipeline.
[0022] Optionally, the cooling circulation pipeline includes:
[0023] The first branch circulation pipe is connected to the main circulation pipe and is arranged in a ring in the edge region of the gap between the second components to surround the edge region of the spray pipe.
[0024] Optionally, the cooling circulation pipeline includes:
[0025] The second branch circulation pipe is connected to the main circulation pipe, and in the vertical direction, one end of the second branch circulation pipe extends along the side wall of the ceramic ring to the edge of the heating plate, and the other end flows back to the main circulation pipe via the bottom of the ceramic ring and the bottom of the cavity.
[0026] Optionally, the semiconductor reaction chamber further includes:
[0027] An exhaust gas treatment pipeline is located at the bottom of the chamber and extends through the side wall of the chamber along the lifting mechanism of the heating plate. It is used to collect and treat the process byproducts purged by the blowing pipeline.
[0028] In some embodiments, the semiconductor coating apparatus includes a semiconductor reaction chamber as described in this application.
[0029] The semiconductor reaction chamber and semiconductor coating equipment provided in this disclosure can achieve the following technical effects:
[0030] By using a separate air blowing pipeline, which includes a gas inlet pipeline, a main air blowing pipeline, and branch air blowing pipelines, a first air blowing port is provided on the main air blowing pipeline to allow purge gas to be blown into the first component gap between the spray plate and the suction ring. The branch air blowing pipeline forms a second air blowing port on the ceramic ring, facing the second component gap, to allow purge gas to be blown into the second component gap between the heating plate and the ceramic ring. In this way, the gaps between the heating plate and the ceramic ring, and between the spray plate and the suction ring, can be purged through the air blowing pipeline, thereby reducing the accumulation of by-products on the edges of the spray plate and the heating plate after long-term processing, improving the heat dissipation effect of the spray plate and the heating plate, and preventing particle adhesion in the gaps.
[0031] The above general description and the description below are exemplary and illustrative only and are not intended to limit this application. Attached Figure Description
[0032] One or more embodiments are illustrated by way of example with reference to the accompanying drawings. These illustrations and drawings do not constitute a limitation on the embodiments. Elements having the same reference numerals in the drawings are shown as similar elements. The drawings are not to be scaled. And wherein:
[0033] Figure 1 is a schematic diagram of a semiconductor reaction chamber provided in an embodiment of this disclosure;
[0034] Figure 2 is a schematic diagram of another semiconductor reaction chamber provided in an embodiment of this disclosure.
[0035] Figure label:
[0036] 1-Semiconductor reaction chamber; 101-Cavity; 102-Chamber; 2-Spray plate; 3-Heating plate; 4-Wafer; 5-Evacuation ring; 6-Ceramic ring; 7-First component gap; 8-Second component gap; 9-Flow obstruction; 10-Exhaust gas treatment pipeline; 11-Blowing pipeline; 111-Gas inflow pipeline; 112-Main blowing pipeline; 113-Branch blowing pipeline; 114-First blowing port; 115-Second blowing port; 12-Cooling circulation pipeline; 121-Main circulation pipeline; 122-First branch circulation pipeline; 123-Second branch circulation pipeline; 13-First fluid passage; 14-Second fluid passage. Detailed Implementation
[0037] To provide a more detailed understanding of the features and technical content of the embodiments of this disclosure, the implementation of the embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. The accompanying drawings are for illustrative purposes only and are not intended to limit the embodiments of this disclosure. In the following technical description, for ease of explanation, several details are used to provide a full understanding of the disclosed embodiments. However, one or more embodiments may still be implemented without these details. In other cases, well-known structures and devices may be simplified in their depiction to simplify the drawings.
[0038] The terms "first," "second," etc., used in the specification, claims, and accompanying drawings of this disclosure are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate for the embodiments of this disclosure described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion.
[0039] In this disclosure, the terms "upper," "lower," "inner," "middle," "outer," "front," and "rear," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for better description of the embodiments of this disclosure and their implementations, and are not intended to limit the indicated devices, elements, or components to having a specific orientation, or to require them to be constructed and operated in a specific orientation. Furthermore, some of the aforementioned terms may be used to indicate other meanings besides orientation or positional relationship; for example, the term "upper" may in some cases indicate a dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in the embodiments of this disclosure according to the specific circumstances.
[0040] Furthermore, the terms "set up," "connect," and "fix" should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this disclosure according to the specific circumstances.
[0041] Unless otherwise stated, the term "multiple" means two or more.
[0042] In this embodiment of the disclosure, the character " / " indicates that the objects before and after it are in an "or" relationship. For example, A / B means: A or B.
[0043] The term "and / or" describes an association between objects, indicating that three relationships can exist. For example, A and / or B means: A or B, or A and B.
[0044] It should be noted that, unless otherwise specified, the embodiments and features described in the present disclosure can be combined with each other.
[0045] At present, traditional thin film deposition technologies, including Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD), are no longer able to effectively and precisely control film properties and meet increasingly stringent process requirements in some key production steps. Therefore, ALD's unique properties, such as forming high-quality, pinhole-free, and conformal films on non-planar complex structures and three-dimensional surfaces, have become apparent.
[0046] Currently, atomic layer deposition (ALD) technology, as one of the most advanced thin film deposition technologies, has been widely used in advanced manufacturing industries such as microelectronics, displays, MEMS, sensors, and photovoltaic cells. With the continuous development of modern science and technology, its applications will continue to expand in the near future.
[0047] This disclosure provides a semiconductor deposition apparatus including a semiconductor reaction chamber as described in this application. The semiconductor deposition apparatus can be an etching apparatus, a chemical vapor deposition apparatus, or an atomic layer deposition apparatus. Specifically, atomic layer deposition (ALD) is a deposition technique that utilizes the chemical adsorption and desorption generated by the surface saturation reaction of a precursor on a substrate (wafer) surface to form a single atomic layer. This technique deposits materials layer by layer on the substrate surface in the form of single atomic layers, and the thickness of the thin film can be easily and precisely controlled by controlling the number of reaction cycles to form atomic layer films of different thicknesses.
[0048] Referring to Figures 1 and 2, this embodiment of the present disclosure provides a semiconductor reaction chamber 1, including a cavity 101 and a chamber 102 formed within the cavity 101. A spray plate 2, a heating plate 3, a vacuum ring 5, and a ceramic ring 6 are disposed within the chamber 102. A first component gap 7 exists between the spray plate 2 and the vacuum ring 5, and a second component gap 8 exists between the heating plate 3 and the ceramic ring 6. Simultaneously, process byproducts can easily accumulate in the first component gap 7 and the second component gap 8 after long-term process operation, resulting in poor heat dissipation of the spray plate 2 and the heating plate 3.
[0049] In this application, the semiconductor reaction chamber 1 further includes a blowing pipe 11, which comprises a gas inlet pipe 111, a main blowing pipe 112, and a branch blowing pipe 113. Specifically, the gas inlet pipe 111 is disposed inside the side wall of the chamber 101 and communicates with an external gas source to introduce purge gas from the external gas source into the blowing pipe 11. The main blowing pipe 112 is disposed inside the side wall of the chamber 101, with one end located at the top of the spray plate 2 and communicating with the gas inlet pipe 111 to obtain purge gas, and the other end located at the bottom of the ceramic ring 6. A first blowing port 114 is provided on the main blowing pipe 112 facing the first component gap 7 so that the purge gas is blown into the first component gap 7 through the first blowing port 114. One end of the branch blowing pipe 113 is connected to the main blowing pipe 112 to obtain the purging gas, and the other end extends along the bottom of the ceramic ring 6 and forms a second blowing port 115 on the ceramic ring 6 facing the second component gap 8, so that the purging gas is blown into the second component gap 8 through the second blowing port 115.
[0050] Optionally, the first air outlet 114 of this application can be multiple, arranged in a ring along the edge region of the first component gap 7, so that the purging gas is evenly blown towards the bottom of the spray plate 2. At the same time, the second air outlet 115 of this application can be multiple, arranged in a ring along the edge region of the second component gap 8, so that the purging gas is evenly blown towards the bottom of the heating plate 3. In this way, it is possible to better achieve all-round purging of the spray plate 2 and the heating plate 3.
[0051] Using the semiconductor reaction chamber 1 provided in this embodiment, an additional air blowing pipe 11 is provided. This air blowing pipe 11 includes a gas inlet pipe 111, a main air blowing pipe 112, and a branch air blowing pipe 113. A first air blowing port 114 is provided on the main air blowing pipe 112 so that the purge gas is blown into the first component gap 7 between the spray plate 2 and the suction ring 5 through the first air blowing port 114. The branch air blowing pipe 113 forms a second air blowing port 115 on the ceramic ring 6 facing the second component gap 8 so that the purge gas is blown into the second component gap 8 between the heating plate 3 and the ceramic ring 6 through the second air blowing port 115. In this way, the gaps between the heating plate 3 and the ceramic ring 6 and between the spray plate 2 and the suction ring 5 can be purged by the air blowing pipe 11, thereby reducing the accumulation of by-products on the edges of the spray plate 2 and the heating plate 3 after long-term process, improving the heat dissipation effect of the spray plate 2 and the heating plate 3, and avoiding particle adhesion in the gaps.
[0052] In one embodiment of this application, as shown in Figures 1 and 2, the semiconductor reaction chamber 1 further includes a flow-blocking element 9. The flow-blocking element 9 has a centrally recessed structure and is disposed at the bottom of the chamber 102 and below the heating plate 3 (i.e., coaxially arranged with the heating plate 3 along its axial direction). The sidewalls of the flow-blocking element 9 and the ceramic ring 6 are arranged adjacent to each other at intervals, meaning the sidewalls of the flow-blocking element 9 can be parallel to each other. The top of the flow-blocking element 9 and the bottom of the heating plate 3 are arranged adjacent to each other at intervals, meaning there is space between the highest point of the flow-blocking element 9 and the lowest point of the heating plate 3 for the flow of process gases and / or process by-products.
[0053] Specifically, the purge gas of this application forms a first fluid passage 13 between the spray plate 2 and the suction ring 5 via the gas inlet pipe 111, the main purge pipe 112, and the first purge port 114 to purge process byproducts accumulated at the edge of the spray plate 2. Simultaneously, the purge gas of this application forms a second fluid passage 14 between the ceramic ring 6 and the flow-blocking element 9 via the gas inlet pipe 111, the main purge pipe 112, the branch purge pipe 113, and the second purge port 115 to purge process byproducts accumulated at the edge of the heating plate 3. This allows for better planning of the fluid path of the purge gas through the flow-blocking element 9, thereby improving the purge efficiency, increasing the uniformity of temperature distribution in the semiconductor reaction chamber 1, and resulting in a more uniform film thickness after deposition.
[0054] In one embodiment of this application, the ceramic ring 6 is disposed on the outer side of the heating plate 3 and coaxially arranged with the heating plate 3. The ceramic ring 6 also includes a multi-layer structure. The lower layer of the ceramic ring 6 has an opening facing the wafer 4 transfer direction for receiving the wafer 4 to be processed via the transfer mechanism. The middle layer of the ceramic ring 6 has fully enclosed ceramic sidewalls for heat preservation of the heating plate 3 and ensuring uniform temperature distribution in all directions of the wafer 4. The upper layer of the ceramic ring 6 has multiple circumferentially arranged extraction ports for extracting residual gases during the thin film deposition process.
[0055] In one embodiment of this application, as shown in Figures 1 and 2, the semiconductor reaction chamber 1 further includes a cooling circulation pipe 12. The cooling circulation pipe 12 is disposed within the air blowing pipe 11 and extends to the edge regions of the first component gap 7 and the second component gap 8, serving to surround the spray plate 2 and the heating plate 3, so that the coolant in the cooling circulation pipe 12 circulates along the edges of the spray plate 2 and the heating plate 3.
[0056] This disclosure provides a semiconductor reaction chamber by additionally configuring a cooling circulation pipe within a separate air blowing pipe. The coolant in the cooling circulation pipe circulates along the edges of the spray plate and the heating plate. This achieves indirect cooling of the spray plate and heating plate while simultaneously purging process byproducts, further reducing the problem of excessively high temperatures in the spray plate and / or heating plate caused by the accumulation of process byproducts.
[0057] Specifically, the cooling circulation pipe 12 of this application includes a main circulation pipe 121, a first branch circulation pipe 122, and a second branch circulation pipe 123. One end of the main circulation pipe 121 is arranged along the gas inflow pipe 111 of the blowing pipe 11, and the other end of the main circulation pipe 121 extends through the main blowing pipe 112 of the blowing pipe 11 to the branch blowing pipe 113 of the blowing pipe 11. The first branch circulation pipe 122 communicates with the main circulation pipe 121 and is arranged in a ring shape in the edge region of the second component gap 8 to surround the edge region of the spray pipe. The second branch circulation pipe 123 communicates with the main circulation pipe 121, and in the vertical direction, one end of the second branch circulation pipe 123 extends along the side wall of the ceramic ring 6 to the edge of the heating plate 3, and the other end flows back to the main circulation pipe 121 via the bottom of the ceramic ring 6 and the bottom of the cavity 101.
[0058] This reduces space requirements and allows for simultaneous purging and cooling, improving the process stability and reliability of the spray plate 2 and heating plate 3.
[0059] In one embodiment of this application, as shown in Figures 1 and 2, the semiconductor reaction chamber 1 further includes a tail gas treatment pipeline 10. The tail gas treatment pipeline 10 is located at the bottom of the chamber 102 and extends along the lifting mechanism of the heating plate 3 through the side wall of the chamber 101. It is used to collect and treat process byproducts blown out by the blowing pipeline 11. Specifically, the process byproducts blown off pass through multiple extraction ports on the tail gas treatment pipeline 10, and then through the gap between the heating plate 3 and the flow obstruction member 9, are drawn away by the vacuum pump of the semiconductor coating equipment. This achieves a gap extraction method, which avoids weak turbulence causing particles to move upwards and affect the particle size of the thin film surface, thus improving product yield.
[0060] This disclosure provides a semiconductor coating apparatus, including a semiconductor reaction chamber as described in this application. The semiconductor coating apparatus includes etching equipment, chemical vapor deposition equipment, or atomic layer deposition equipment. Specifically, the semiconductor coating apparatus generally includes a housing, a gas delivery system, a semiconductor reaction chamber, a spray plate, a heating plate, and an exhaust assembly. The heating plate carries a semiconductor substrate (wafer) into the semiconductor reaction chamber. Under vacuum conditions, the substrate undergoes a chemical reaction with the reaction gas delivered by the gas delivery system, including an etching stage, a thin film deposition stage, a cleaning stage, or any other stage known to those skilled in the art. The exhaust assembly can be kept normally open to continuously ensure the flow of gas and particles within the reaction chamber.
[0061] The semiconductor coating equipment provided in this embodiment of the present disclosure utilizes an additional air blowing pipeline. This air blowing pipeline includes a gas inlet pipeline, a main air blowing pipeline, and branch air blowing pipelines. A first air blowing port is provided on the main air blowing pipeline to allow purge gas to be blown into the first component gap between the spray plate and the suction ring. A second air blowing port is formed on the ceramic ring, facing the second component gap, to allow purge gas to be blown into the second component gap between the heating plate and the ceramic ring. This allows the air blowing pipeline to purge the gaps between the heating plate and the ceramic ring, and between the spray plate and the suction ring, thereby reducing the accumulation of by-products on the edges of the spray plate and the heating plate after long-term processing, improving the heat dissipation effect of the spray plate and the heating plate, and preventing particle adhesion in the gaps.
[0062] The foregoing description and accompanying drawings fully illustrate embodiments of the present disclosure to enable those skilled in the art to practice them. Other embodiments may include structural and other changes. The embodiments represent only possible variations. Individual components and functions are optional unless explicitly required, and the order of operation may vary. Parts and features of some embodiments may be included or substituted for parts and features of other embodiments. Embodiments of the present disclosure are not limited to the structures described above and shown in the accompanying drawings, and various modifications and changes may be made without departing from its scope. The scope of the present disclosure is limited only by the appended claims.
Claims
1. A semiconductor reaction chamber, comprising a cavity body and a chamber formed within the cavity body, wherein a spray plate, a heating plate, a vacuum ring, and a ceramic ring are disposed within the chamber body, wherein, A first component gap exists between the spray plate and the suction ring, and a second component gap exists between the heating plate and the ceramic ring. The feature is that it further includes an air blowing pipe, the air blowing pipe comprising: A gas inflow pipe is installed inside the side wall of the cavity and connected to an external gas source, used to introduce purge gas from the external gas source into the purge pipe. The main air blowing pipe is located inside the side wall of the cavity. One end of the main air blowing pipe is located at the top of the spray plate and is connected to the gas inflow pipe to obtain the purging gas. The other end is located at the bottom of the ceramic ring. A first air blowing port is provided on the main air blowing pipe facing the gap between the first components so that the purging gas is blown into the gap between the first components through the first air blowing port. A branch blowing pipe has one end connected to the main blowing pipe for obtaining purge gas, and the other end extends along the bottom of the ceramic ring and forms a second blowing port on the ceramic ring facing the gap of the second component, so that the purge gas is blown into the gap of the second component through the second blowing port.
2. The semiconductor reaction chamber according to claim 1, characterized in that, The first air inlet is multiple in number and is arranged in a ring along the edge region of the gap between the first components, so that the purging gas is blown evenly to the bottom of the spray plate; The second air inlet is multiple in number and arranged in a ring along the edge region of the gap between the second components, so that the blowing gas is evenly blown to the bottom of the heating plate.
3. The semiconductor reaction chamber according to claim 1, characterized in that, Also includes: The flow-blocking element has a centrally recessed structure and is located at the bottom of the chamber and below the heating plate. The sidewall of the flow-blocking element is adjacent to the sidewall of the ceramic ring and spaced apart. The top of the flow-blocking element is adjacent to the bottom of the heating plate and spaced apart.
4. The semiconductor reaction chamber according to claim 1, characterized in that, The purging gas, via the gas inlet pipe, the main purging pipe and the first purging port, forms a first fluid passage between the spray plate and the suction ring to purge the process by-products accumulated at the edge of the spray plate. The purging gas, via a gas inlet pipe, a main purging pipe, a branch purging pipe, and a second purging port, forms a second fluid passage between the ceramic ring and the flow-blocking element to purge the process byproducts accumulated at the edge of the heating plate.
5. The semiconductor reaction chamber according to any one of claims 1 to 4, characterized in that, Also includes: A cooling circulation pipe is provided in the air blowing pipe and extends to the edge region of the gap between the first component and the edge region of the gap between the second component, for surrounding the spray plate and the heating plate, so that the coolant in the cooling circulation pipe circulates along the edge of the spray plate and the edge of the heating plate.
6. The semiconductor reaction chamber according to claim 5, characterized in that, The cooling circulation pipeline includes: The main circulation pipeline has one end laid along the gas inflow pipeline of the blowing pipeline, and the other end extends through the main blowing pipeline of the blowing pipeline to the branch blowing pipeline of the blowing pipeline.
7. The semiconductor reaction chamber according to claim 6, characterized in that, The cooling circulation pipeline includes: The first branch circulation pipe is connected to the main circulation pipe and is arranged in a ring in the edge region of the gap between the second components to surround the edge region of the spray pipe.
8. The semiconductor reaction chamber according to claim 6, characterized in that, The cooling circulation pipeline includes: The second branch circulation pipe is connected to the main circulation pipe, and in the vertical direction, one end of the second branch circulation pipe extends along the side wall of the ceramic ring to the edge of the heating plate, and the other end flows back to the main circulation pipe via the bottom of the ceramic ring and the bottom of the cavity.
9. The semiconductor reaction chamber according to claim 1, characterized in that, Also includes: An exhaust gas treatment pipeline is located at the bottom of the chamber and extends through the side wall of the chamber along the lifting mechanism of the heating plate. It is used to collect and treat the process byproducts purged by the blowing pipeline.
10. A semiconductor coating apparatus, characterized in that, Includes the semiconductor reaction chamber as described in any one of claims 1 to 9.