Bonding program, bonding system, and bonding method

Abstract

A bonding program according to the present disclosure causes a computer to execute: a procedure for acquiring, as information pertaining to a plurality of first alignment marks (P1) provided on a first substrate (W1), first information pertaining to a deviation between an ideal position and a measured position of each of the first alignment marks (P1) on the substrate; a procedure for acquiring, as information pertaining to a plurality of second alignment marks (P2) provided on a second substrate (W2), second information pertaining to a deviation between an ideal position and a measured position of each of the second alignment marks (P2) on the substrate; and a procedure for adjusting a processing condition of a bonding process for bonding the first substrate (W1) and the second substrate (W2) on the basis of the first information and the second information acquired in the procedures for acquisition.

Description

Joining program, joining system, and joining method

[0001] This disclosure relates to a joining program, a joining system, and a joining method.

[0002] Conventionally, bonding apparatuses for joining substrates such as semiconductor wafers are known (see Patent Document 1).

[0003] Japanese Patent Publication No. 2020-145287

[0004] This disclosure provides a technology that can improve the precision of substrate bonding.

[0005] A bonding program according to one aspect of the present disclosure involves causing a computer to execute the following steps: a procedure for acquiring first information relating to a plurality of first alignment marks provided on a first substrate, wherein the first information relates to the deviation between the ideal position of each first alignment mark on the substrate and the measured position; a procedure for acquiring second information relating to a plurality of second alignment marks provided on a second substrate, wherein the second information relates to the deviation between the ideal position of each second alignment mark on the substrate and the measured position; and a procedure for adjusting the processing conditions of a bonding process to bond the first substrate and the second substrate based on the first and second information acquired in the acquisition procedure.

[0006] This disclosure can improve the precision of substrate bonding.

[0007] Figure 1 is a schematic plan view showing the configuration of the bonding system according to the embodiment. Figure 2 is a schematic side view of the upper and lower wafers according to the embodiment. Figure 3 is a schematic plan view showing the configuration of the bonding apparatus according to the embodiment. Figure 4 is a schematic side view showing the configuration of the bonding apparatus according to the embodiment. Figure 5 is a schematic diagram showing the configuration of the upper and lower chucks according to the embodiment. Figure 6 is a block diagram showing the configuration of the control device according to the embodiment. Figure 7A is a schematic view looking up from below of the upper wafer held by adsorption on the upper chuck. Figure 7B is a schematic view looking down from above of the lower wafer held by adsorption on the lower chuck. Figure 8 is a flowchart showing the procedure of the processing performed by the bonding system according to the embodiment. Figure 9 is a flowchart showing an example of a specific procedure of the processing shown in step S112.

[0008] The embodiments for implementing the joining program, joining system, and joining method described herein (hereinafter referred to as "Embodiments") will be described in detail below with reference to the drawings. However, the disclosure is not limited by these embodiments. Furthermore, each embodiment can be combined as appropriate, provided that the processing content is not inconsistent. Also, the same parts are denoted by the same reference numerals in each of the following embodiments, and redundant descriptions are omitted.

[0009] Furthermore, in the embodiments described below, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not require strict "constant," "orthogonal," "perpendicular," or "parallel." In other words, each of the above expressions allows for errors and tolerances such as manufacturing accuracy and installation accuracy.

[0010] Furthermore, in the drawings referenced below, for the sake of clarity, mutually orthogonal X, Y, and Z axis directions are sometimes defined, and a Cartesian coordinate system is shown with the positive Z axis pointing vertically upward.

[0011] <Configuration of the Bonding System> First, the configuration of the bonding system 1 according to the embodiment will be described with reference to Figures 1 and 2. Figure 1 is a schematic plan view showing the configuration of the bonding system 1 according to the embodiment. Figure 2 is a schematic side view of the upper wafer W1 and lower wafer W2 according to the embodiment.

[0012] The bonding system 1 shown in Figure 1 forms a polymerized wafer T by bonding a first substrate W1 and a second substrate W2.

[0013] The first substrate W1 and the second substrate W2 are semiconductor substrates, such as silicon wafers or compound semiconductor wafers. The first substrate W1 and the second substrate W2 have approximately the same diameter.

[0014] In the following, the first substrate W1 will be referred to as "upper wafer W1," and the second substrate W2 will be referred to as "lower wafer W2." That is, upper wafer W1 is an example of the first substrate, and lower wafer W2 is an example of the second substrate. Also, when referring to upper wafer W1 and lower wafer W2 collectively, they may be referred to as "wafer W."

[0015] Furthermore, as shown in Figure 2 below, the surface of the upper wafer W1 that is joined to the lower wafer W2 will be referred to as the "joining surface W1j," and the surface opposite to the joining surface W1j will be referred to as the "non-joining surface W1n." Similarly, the surface of the lower wafer W2 that is joined to the upper wafer W1 will be referred to as the "joining surface W2j," and the surface opposite to the joining surface W2j will be referred to as the "non-joining surface W2n."

[0016] As shown in Figure 1, the joining system 1 comprises an input / output station 2 and a processing station 3. The input / output station 2 and the processing station 3 are arranged in the order of input / output station 2 and processing station 3 along the positive X-axis. The input / output station 2 and the processing station 3 are connected integrally.

[0017] The loading / unloading station 2 comprises a mounting table 10 and a transport area 20. The mounting table 10 comprises a plurality of mounting plates 11. Each mounting plate 11 is fitted with cassettes C1, C2, and C3, which accommodate multiple substrates (for example, 25) in a horizontal position. For example, cassette C1 is a cassette for accommodating an upper wafer W1, cassette C2 is a cassette for accommodating a lower wafer W2, and cassette C3 is a cassette for accommodating a polymerized wafer T.

[0018] The transport area 20 is positioned adjacent to the positive X-axis side of the mounting table 10. This transport area 20 is provided with a transport path 21 extending in the Y-axis direction and a transport device 22 that is movable along this transport path 21.

[0019] The transport device 22 is movable not only in the Y-axis direction but also in the X-axis direction and can rotate around the Z-axis. The transport device 22 transports the upper wafer W1, the lower wafer W2, and the polymerized wafer T between the cassettes C1 to C3 placed on the mounting plate 11 and the third processing block G3 of the processing station 3, which will be described later.

[0020] The number of cassettes C1 to C3 placed on the mounting plate 11 is not limited to those shown in the figure. In addition, cassettes for recovering faulty circuit boards, etc., may be placed on the mounting plate 11 in addition to cassettes C1, C2, and C3.

[0021] The processing station 3 is equipped with multiple processing blocks, for example, three processing blocks G1, G2, and G3, each containing various devices. For example, the first processing block G1 is located on the front side of the processing station 3 (the negative Y-axis side in Figure 1), and the second processing block G2 is located on the rear side of the processing station 3 (the positive Y-axis side in Figure 1). In addition, the third processing block G3 is located on the loading / unloading station 2 side of the processing station 3 (the negative X-axis side in Figure 1).

[0022] The first processing block G1 is equipped with a surface modification apparatus 30 that modifies the bonding surfaces W1j and W2j of the upper wafer W1 and the lower wafer W2. The surface modification apparatus 30 modifies the SiO at the bonding surfaces W1j and W2j of the upper wafer W1 and the lower wafer W2. ２ The bonding is broken to form a single bond in SiO, thereby modifying the bonding surfaces W1j and W2j to facilitate subsequent hydrophilization.

[0023] Furthermore, a surface hydrophilization device 40 is located in the first processing block G1. The surface hydrophilization device 40 hydrophilizes the bonding surfaces W1j and W2j of the upper wafer W1 and the lower wafer W2 with pure water, for example, and also cleans the bonding surfaces W1j and W2j.

[0024] In the surface hydrophilization apparatus 40, for example, the upper wafer W1 or lower wafer W2 held in a spin chuck is rotated while pure water is supplied onto the upper wafer W1 or lower wafer W2. As a result, the pure water supplied onto the upper wafer W1 or lower wafer W2 diffuses over the bonding surfaces W1j and W2j of the upper wafer W1 or lower wafer W2, and the bonding surfaces W1j and W2j are made hydrophilic.

[0025] Here, an example is shown where the surface modification device 30 and the surface hydrophilization device 40 are arranged side by side, but the surface hydrophilization device 40 may be stacked above or below the surface modification device 30.

[0026] Furthermore, a bonding device 41 is located in the second processing block G2. The bonding device 41 bonds the hydrophilized upper wafer W1 and the lower wafer W2 by intermolecular forces. Details of this bonding device 41 will be described later.

[0027] The third processing block G3 is provided with a transition (TRS) apparatus (not shown) for the upper wafer W1, the lower wafer W2, and the polymerized wafer T. The third processing block G3 may also be provided with a mounting section for temporarily placing the upper wafer W1 or the lower wafer W2. The mounting section may be capable of holding multiple wafers (upper wafer W1 or lower wafer W2).

[0028] Furthermore, as shown in Figure 1, a transport area 60 is formed in the region enclosed by the first processing block G1, the second processing block G2, and the third processing block G3. A transport device 61 is arranged in the transport area 60. The transport device 61 has, for example, a transport arm that is movable in the vertical direction, the horizontal direction, and around the vertical axis.

[0029] The transport device 61 moves within the transport area 60 and transports the upper wafer W1, lower wafer W2, and polymerized wafer T to a given device in the first processing block G1, second processing block G2, and third processing block G3 adjacent to the transport area 60.

[0030] Furthermore, the bonding system 1 includes a control device 70. The control device 70 controls the operation of the bonding system 1. The control device 70 controls the operation of the bonding system 1 based on signals from switches, various sensors, etc.

[0031] The control device 70 includes a microcomputer with a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, and various circuits. The control device 70 controls the operation of the junction system 1 by, for example, reading and executing a program stored in the memory unit 72. Details of this control device 70 will be described later.

[0032] <Configuration of the Joining Device> Next, the configuration of the joining device 41 will be described with reference to Figures 3 and 4. Figure 3 is a schematic plan view showing the configuration of the joining device 41 according to the embodiment, and Figure 4 is a schematic side view showing the configuration of the joining device 41 according to the embodiment.

[0033] As shown in FIG. 3, the bonding apparatus 41 has a processing container 190 that can be sealed inside. An inlet / outlet 191 for the upper wafer W1, the lower wafer W2, and the polymerized wafer T is formed on the side surface of the processing container 190 on the conveyance region 60 side, and an opening / closing shutter 192 is provided at the inlet / outlet 191.

[0034] The inside of the processing container 190 is partitioned by an inner wall 193 into a conveyance region T1 and a processing region T2. The above-described inlet / outlet 191 is formed on the side surface of the processing container 190 in the conveyance region T1. Also, inlet / outlets 194 for the upper wafer W1, the lower wafer W2, and the polymerized wafer T are formed on the inner wall 193.

[0035] In the conveyance region T1, a transition 200, a substrate conveyance mechanism 201, a reversing mechanism 220, and a position adjustment mechanism 210 are arranged side by side in this order, for example, from the inlet / outlet 191 side.

[0036] The transition 200 temporarily mounts the upper wafer W1, the lower wafer W2, and the polymerized wafer T. The transition 200 is formed in two stages, for example, and can mount any two of the upper wafer W1, the lower wafer W2, and the polymerized wafer T at the same time.

[0037] The substrate conveyance mechanism 201 has a conveyance arm that is movable in, for example, the vertical direction (Z-axis direction), the horizontal direction (Y-axis direction, X-axis direction), and the direction around the vertical axis (θ direction). The substrate conveyance mechanism 201 can convey the upper wafer W1, the lower wafer W2, and the polymerized wafer T within the conveyance region T1 or between the conveyance region T1 and the processing region T2.

[0038] The position adjustment mechanism 210 adjusts the horizontal orientations of the upper wafer W1 and the lower wafer W2. Specifically, the position adjustment mechanism 210 includes a base 211 having a holding portion (not shown) that holds and rotates the upper wafer W1 and the lower wafer W2, and a detection portion 212 that detects the positions of the notch portions of the upper wafer W1 and the lower wafer W2. The position adjustment mechanism 210 adjusts the positions of the notch portions by detecting the positions of the notch portions of the upper wafer W1 and the lower wafer W2 using the detection portion 212 while rotating the upper wafer W1 and the lower wafer W2 held by the base 211. Thereby, the horizontal orientations of the upper wafer W1 and the lower wafer W2 are adjusted.

[0039] The inversion mechanism 220 inverts the front and back of the upper wafer W1. Specifically, the inversion mechanism 220 has a holding arm 221 that holds the upper wafer W1. The holding arm 221 extends in the horizontal direction (X-axis direction). Further, holding members 222 for holding the upper wafer W1 are provided at, for example, four locations on the holding arm 221.

[0040] The holding arm 221 is supported by a drive portion 223 including, for example, a motor. The holding arm 221 is rotatable about a horizontal axis by the drive portion 223. Further, the holding arm 221 is rotatable about the drive portion 223 and is movable in the horizontal direction (X-axis direction). Below the drive portion 223, another drive portion (not shown) including, for example, a motor is provided. By this other drive portion, the drive portion 223 can move in the vertical direction along a support column 224 that extends in the vertical direction.

[0041] Thus, the upper wafer W1 held by the holding member 222 can be rotated about a horizontal axis by the drive portion and can move in the vertical and horizontal directions. Further, the upper wafer W1 held by the holding member 222 can rotate about the drive portion 223 and move between the position adjustment mechanism 210 and an upper chuck 230 described later

[0042] The processing area T2 is provided with an upper chuck 230 that holds the upper surface (non-bonding surface W1n) of the upper wafer W1 from above by suction, and a lower chuck 231 that holds the lower surface (non-bonding surface W2n) of the lower wafer W2 from below by suction. The lower chuck 231 is provided below the upper chuck 230 and is configured to be positioned opposite the upper chuck 230. The upper chuck 230 and the lower chuck 231 are, for example, vacuum chucks.

[0043] As shown in Figure 4, the upper chuck 230 is supported by a support member 270 provided above the upper chuck 230. The support member 270 is fixed to the ceiling surface of the processing container 190, for example, via a plurality of support columns 271.

[0044] An upper imaging unit 235 is provided on the side of the upper chuck 230 to image the upper surface (bonding surface W2j) of the lower wafer W2 held by the lower chuck 231. For example, a CCD camera is used in the upper imaging unit 235.

[0045] The upper chuck 230 may be provided with an adjustment unit for adjusting the in-plane position and orientation of the upper wafer W1 held by the upper chuck 230 in the horizontal direction. Any known technology may be used for such an adjustment unit. For example, the substrate positioning device described in Japanese Patent Application Publication No. 2021-125660 may be used as the adjustment unit. The substrate positioning device adjusts the in-plane position and orientation of the upper wafer W1 held by the upper chuck 230 by moving the upper chuck 230 in the X-axis direction, Y-axis direction, and θ-axis direction.

[0046] The lower chuck 231 is supported by a first movable part 250 located below it. The first movable part 250 moves the lower chuck 231 horizontally (in the X-axis direction), as will be described later. The first movable part 250 is also configured to allow the lower chuck 231 to move vertically and rotate around a vertical axis.

[0047] The first moving unit 250 is provided with a lower imaging unit 236 that images the lower surface (bonding surface W1j) of the upper wafer W1 held by the upper chuck 230. For example, a CCD camera is used for the lower imaging unit 236.

[0048] The first movable part 250 is attached to a pair of rails 252, 252. The pair of rails 252, 252 are provided on the lower side of the first movable part 250 and extend horizontally (in the X-axis direction). The first movable part 250 is configured to be movable along the rails 252.

[0049] A pair of rails 252, 252 are arranged on the second movable section 253. The second movable section 253 is attached to a pair of rails 254, 254. The pair of rails 254, 254 are provided on the lower side of the second movable section 253 and extend horizontally (in the Y-axis direction). The second movable section 253 is configured to be movable horizontally (in the Y-axis direction) along the rails 254. The pair of rails 254, 254 are arranged on a mounting base 255 provided on the bottom surface of the processing container 190.

[0050] The adjustment unit 256 is formed by the first moving unit 250 and the second moving unit 253, etc. The adjustment unit 256 adjusts the in-plane position and orientation of the lower wafer W2 held by the lower chuck 231 by moving the lower chuck 231 in the X-axis direction, Y-axis direction, and θ direction. The bonding apparatus 41 adjusts the in-plane position and orientation of the upper wafer W1 and the lower wafer W2 using the adjustment unit (not shown) of the upper chuck 230 and the adjustment unit 256 of the lower chuck 231. However, the bonding apparatus 41 may also adjust the in-plane position and orientation of the upper wafer W1 and the lower wafer W2 using only one of the adjustment unit of the upper chuck 230 and the adjustment unit 256 of the lower chuck 231.

[0051] Furthermore, the adjustment unit 256 adjusts the vertical position of the upper wafer W1 held by the upper chuck 230 and the lower wafer W2 held by the lower chuck 231 by moving the lower chuck 231 in the Z-axis direction.

[0052] In this example, the lower chuck 231 is moved in the X-axis, Y-axis, and θ-axis directions. However, the adjustment unit 256 may, for example, move the lower chuck 231 in the X-axis and Y-axis directions and the upper chuck 230 in the θ-axis direction. Also, in this example, the lower chuck 231 is moved in the Z-axis direction. However, the adjustment unit 256 may, for example, move the upper chuck 230 in the Z-axis direction.

[0053] <Upper Chuck> Next, the upper chuck 230 will be described with reference to Figure 5. Figure 5 is a schematic diagram showing the configuration of the upper chuck 230 and the lower chuck 231 according to this embodiment.

[0054] The upper chuck 230 comprises a holding portion 260, a first suction portion 112, a second suction portion 113, and a deformation portion 114.

[0055] The upper chuck 230 is supported by a support member 270. The support member 270 is formed in a circular shape. A housing chamber 110a for accommodating the deformable portion 114 is formed in the support member 270. The housing chamber 110a is formed in the center of the support member 270.

[0056] The holding portion 260 is attached to the lower surface of the support member 270 and fixed to the support member 270. The holding portion 260 is formed in a circular shape. Multiple pins 120 are provided on the lower surface of the holding portion 260. The multiple pins 120 contact the upper surface of the upper wafer W1, i.e., the non-bonding surface W1n of the upper wafer W1, and hold the upper wafer W1. The holding portion 260 holds the upper wafer W1 by adsorbing the non-bonding surface W1n of the upper wafer W1.

[0057] The upper wafer W1 is attracted by the vacuum created by the first suction section 112 and the second suction section 113, and is held in the holding section 260. In other words, the holding section 260 holds the upper wafer W1 to be bonded.

[0058] An outer rib 121 and an inner rib 122 are provided on the lower surface of the holding portion 260. The outer rib 121 contacts the upper surface of the upper wafer W1, that is, the outer periphery of the non-bonding surface W1n of the upper wafer W1. The outer rib 121 is at the same height as the pin 120. The outer rib 121 is provided outside the pin 120 in the radial direction of the upper wafer W1. The outer rib 121 is formed in an annular shape along the periphery of the upper wafer W1.

[0059] The inner rib 122 contacts the upper surface of the upper wafer W1. The inner rib 122 is located inside the outer rib 121 in the radial direction of the upper wafer W1. The inner rib 122 is at the same height as the outer rib 121, i.e., the pin 120. The inner rib 122 is formed in an annular shape and is formed concentrically with the outer rib 121.

[0060] The region inside the outer rib 121 is divided into a first suction region 123a and a second suction region 123b. The first suction region 123a is the region inside the inner rib 122 in the radial direction of the upper wafer W1. The second suction region 123b is the region outside the inner rib 122 in the radial direction of the upper wafer W1.

[0061] The holding portion 260 has a first suction hole 124a, a second suction hole 124b, and an insertion hole 124c. The first suction hole 124a communicates with the first suction region 123a. Multiple first suction holes 124a are formed. The second suction holes 124b communicate with the second suction region 123b. Multiple second suction holes 124b are formed. The insertion hole 124c is formed in the center of the holding portion 260, and the tip of the actuator 114a of the deformation portion 114, which will be described later, is inserted into it.

[0062] The first suction unit 112 is connected to the first suction hole 124a. The first suction unit 112 is, for example, a vacuum pump. By using the first suction unit 112 to create a vacuum, the first suction region 123a is depressurized.

[0063] The second suction unit 113 is connected to the second suction hole 124b. The second suction unit 113 is, for example, a vacuum pump. By using the second suction unit 113 to create a vacuum, the second suction region 123b is depressurized.

[0064] The upper wafer W1 is held by the holding portion 260 by suction, as the first suction region 123a is depressurized by the first suction portion 112 and the second suction region 123b is depressurized by the second suction portion 113. The upper chuck 230 can be vacuumed at each of the first suction portion 112 and the second suction portion 113. In other words, the suction force on the upper wafer W1 can be adjusted at each of the first suction region 123a and the second suction region 123b.

[0065] The deformable portion 114 is provided in a housing chamber 110a formed in the support member 270. A part of the deformable portion 114 may be provided above the support member 270. The deformable portion 114 comprises an actuator 114a and a cylinder 114b.

[0066] The actuator 114a generates a constant pressure in a specific direction using air supplied from an electro-pneumatic regulator (not shown). The actuator 114a can generate a constant pressure regardless of the position of the point of application of the pressure. The tip of the actuator 114a contacts the center of the upper surface of the upper wafer W1, and can control the pressing load applied to the center of the upper wafer W1.

[0067] The cylinder 114b supports the actuator 114a. The cylinder 114b moves the actuator 114a vertically, for example, by a drive unit that incorporates a motor.

[0068] The deformation section 114 controls the pressing load on the upper wafer W1 by actuator 114a and controls the movement of actuator 114a by cylinder 114b. The deformation section 114 presses downward the central part of the upper wafer W1, which is held by the holding section 260, causing the upper wafer W1 to curve downward. In other words, the deformation section 114 causes the central part of the upper wafer W1, which is held by the holding section 260, to protrude relative to the outer periphery of the upper wafer W1. The deformation section 114 can adjust the amount of protrusion of the central part of the upper wafer W1 by controlling the amount of movement of actuator 114a.

[0069] <Lower Chuck> Next, the lower chuck 231 will be described. The lower chuck 231 comprises a base portion 310, a holding portion 311, a suction portion 312, and a deformation portion 313.

[0070] The base portion 310 is attached to the first movable portion 250 (see Figure 4). The base portion 310 is circular. A housing chamber 310a for housing the measuring portion 340 is formed in the base portion 310. The housing chamber 310a is formed in the center of the base portion 310.

[0071] An insertion hole 310b is formed in the base portion 310. The insertion hole 310b communicates with the housing chamber 310a. The insertion hole 310b is formed in the center of the base portion 310. In addition, a suction pipe 310c and an intake / exhaust pipe 310d are provided in the base portion 310.

[0072] Multiple suction tubes 310c are provided. Alternatively, only one suction tube 310c may be provided. A sealing material, such as a V-ring, is provided around the suction tube 310c. The suction tube 310c extends to the holding portion 311. A sealing material, such as a V-ring, is provided around the intake / exhaust pipe 310d.

[0073] The retaining portion 311 is provided above the base portion 310. The retaining portion 311 is circular in shape. A fixing ring 342 is provided around the retaining portion 311. The retaining portion 311 is fixed to the base portion 310 by the fixing ring 342.

[0074] The holding portion 311 is formed from a ceramic material such as alumina ceramic or silicon carbide. The holding portion 311 is expandable and contractible in the vertical and horizontal directions. The holding portion 311 can achieve high precision in flatness and high resilience.

[0075] The upper surface of the holding portion 311 is circular. The diameter of the upper surface of the holding portion 311 is greater than the diameter of the lower wafer W2. The thickness of the central part of the holding portion 311 is greater than the thickness of the outer circumference. A rib 311a is provided on the lower surface of the holding portion 311. The rib 311a contacts the base portion 310 when the upper surface of the holding portion 311 is horizontal. A pressure-variable space 343 is formed between the lower surface of the holding portion 311 and the upper surface of the base portion 310.

[0076] A suction tube 310c is provided in the holding section 311. A sealing material, such as a V-ring, is provided around the suction tube 310c. The lower wafer W2 is attracted by vacuum drawn by the suction section 312 via the suction tube 310c and held in the holding section 311. The holding section 311 holds the lower wafer W2 by attracting the non-bonding surface W2n of the lower wafer W2. In other words, the holding section 311 holds the lower wafer W2 which is bonded to the upper wafer W1.

[0077] The holding portion 311 is provided with a temperature sensor 344 for measuring the temperature of the lower wafer W2. The temperature sensor 344 is in contact with the lower surface of the lower wafer W2, i.e., the non-bonding surface W2n of the lower wafer W2. Multiple temperature sensors 344 are provided. For example, the temperature of the lower wafer W2 is the average value of the temperatures measured by multiple temperature sensors 344. Note that only one temperature sensor 344 may be provided.

[0078] The suction unit 312 is connected to the suction tube 310c. The suction unit 312 is, for example, a vacuum pump. By creating a vacuum with the suction unit 312, the air between the lower surface of the lower wafer W2, i.e., the non-bonding surface W2n, and the holding unit 311 is drawn out. As the air between the lower surface of the lower wafer W2 and the holding unit 311 is drawn out by the suction unit 312, the lower wafer W2 is held in place by the holding unit 311.

[0079] The deformable section 313 includes a vacuum pump 320 and an electro-pneumatic regulator 321.

[0080] The vacuum pump 320 is connected to the intake / exhaust pipe 310d via a switching valve 322. When the vacuum pump 320 performs vacuuming, the pressure variable space 343 is depressurized. As the pressure variable space 343 is depressurized, the ribs 311a of the holding part 311 come into contact with the base part 310. In this case, the upper surface of the holding part 311 becomes horizontal.

[0081] The electro-pneumatic regulator 321 is connected to the intake / exhaust pipe 310d via a switching valve 322. The electro-pneumatic regulator 321 supplies air to the variable pressure space 343, pressurizing the variable pressure space 343. As a result, the holding portion 311 is pressed from below. The outer circumference of the holding portion 311 is fixed to the base portion 310 by a fixing ring 342. Therefore, when pressed from below, the central portion of the holding portion 311 protrudes upward more than the outer circumference.

[0082] The switching valve 322 switches the connection state between the intake / exhaust pipe 310d, the vacuum pump 320, and the electro-pneumatic regulator 321.

[0083] The deformation section 313 pressurizes the pressure variable space 343, causing the central part of the holding section 311 to protrude upward. As a result, the central part of the lower wafer W2 held by the holding section 311 protrudes upward, causing the lower wafer W2 to curve. In other words, the deformation section 313 causes the central part of the lower wafer W2 held by the holding section 311 to protrude relative to the outer periphery of the lower wafer W2. The deformation section 313 can adjust the amount of protrusion of the central part of the lower wafer W2 by adjusting the pressure in the pressure variable space 343.

[0084] The measuring unit 340 measures the amount of protrusion of the holding unit 311, that is, the amount of protrusion of the central part of the lower wafer W2. The measuring unit 340 is, for example, a capacitance sensor. The capacitance sensor measures the change in capacitance formed by the sensor surface and the measurement target 340a as the distance between the sensor surface and the measurement target 340a.

[0085] The measuring target 340a is mounted in the center of the lower surface of the holding portion 311 and moves vertically together with the holding portion 311. The measuring target 340a is inserted into the insertion hole 310b of the base portion 310. A sealing material (not shown), such as a V-ring, is provided around the measuring target 340a.

[0086] The bonding apparatus 41 bends the upper wafer W1 with the upper chuck 230 so that the central part of the upper wafer W1 protrudes downward, and bends the lower wafer W2 with the lower chuck 231 so that the central part of the lower wafer W2 protrudes upward.

[0087] The bonding apparatus 41 then bonds the upper wafer W1 and the lower wafer W2 to form a polymerized wafer T.

[0088] <Configuration of the control device> Next, the configuration of the control device 70 according to the embodiment will be described with reference to Figure 6. Figure 6 is a block diagram showing the configuration of the control device 70 according to the embodiment. As shown in Figure 6, the control device 70 comprises a control unit 71 and a storage unit 72.

[0089] In addition to the functional units shown in Figure 6, the control device 70 may also have various functional units that are found in known computers, such as various input devices and audio output devices.

[0090] The control unit 71 is implemented, for example, by a CPU, MPU (Micro Processing Unit), GPU (Graphics Processing Unit), etc., which executes the program stored in the memory unit 72 using RAM as the working area.

[0091] Furthermore, the control unit 71 may be implemented using an integrated circuit such as an ASIC (Application Specific Integrated Circuit) or an FPGA (Field Programmable Gate Array).

[0092] The control unit 71 comprises an acquisition unit 71a and an adjustment processing unit 71b, and realizes or executes the functions and operations of the control processing described below. Note that the internal configuration of the control unit 71 is not limited to the configuration shown in Figure 6, and other configurations are also acceptable as long as they perform the control processing described later.

[0093] The acquisition unit 71a acquires first information relating to a plurality of first alignment marks provided on the upper wafer W1. The acquisition unit 71a also acquires second information relating to a plurality of second alignment marks provided on the lower wafer W2. The first and second alignment marks will now be explained with reference to Figures 7A and 7B. Figure 7A is a schematic diagram of the upper wafer W1 held by the upper chuck 230, viewed from below. Figure 7B is a schematic diagram of the lower wafer W2 held by the lower chuck 231, viewed from above. For example, as shown in Figures 7A and 7B, a plurality of alignment marks are located on the wafer W. Specifically, as shown in Figure 7A, a plurality of first alignment marks P1 are located on the upper wafer W1. Also, as shown in Figure 7B, a plurality of second alignment marks P2 are located on the lower wafer W2.

[0094] The number of first alignment marks P1 on the upper wafer W1 may be the same as the number of second alignment marks P2 on the lower wafer W2. In this case, one second alignment mark P2 corresponds to one first alignment mark P1. Specifically, a second alignment mark P2a corresponds to a first alignment mark P1a. Similarly, a second alignment mark P2b corresponds to a first alignment mark P1b, and a second alignment mark P2c corresponds to a first alignment mark P1c.

[0095] The acquisition unit 71a acquires first information relating to a plurality of first alignment marks P1. The first information is, for example, information relating to the deviation between the ideal position of each first alignment mark P1 on the substrate and the measured position. Specifically, the acquisition unit 71a receives information on the ideal position and the measured position of a plurality of first alignment marks P1 from outside the bonding system 1 via a network such as a LAN (Local Area Network). Subsequently, the acquisition unit 71a acquires the first information by calculating the deviation between the ideal position and the measured position based on the received position information.

[0096] Here, an example of the acquisition process of the first information by the acquisition unit 71a will be described while referring to FIG. 7A. The acquisition unit 71a acquires, for example, the ideal coordinates (design coordinates) of a plurality of first alignment marks P1 from outside the bonding system 1. Specifically, the acquisition unit 71a acquires the ideal coordinates P1ai (P1ai ｘ , P1ai ｙ ), P1bi (P1bi ｘ , P1bi ｙ ), and P1ci (P1ci ｘ , P1ci ｙ ) of at least three first alignment marks P1a, P1b, and P1c among the plurality of first alignment marks P1. The first alignment mark P1a may be a first alignment mark P1 located near the center of the upper wafer W1. The first alignment marks P1b and P1c may be first alignment marks P1 located on the outer peripheral portion of the upper wafer W1. The first alignment marks P1b and P1c may be first alignment marks P1 located near both ends of the diameter of the upper wafer W1 among the first alignment marks P1 located on the outer peripheral portion of the upper wafer W1.

[0097] Further, the acquisition unit 71a acquires the coordinates of a plurality of first alignment marks P1 measured, for example, outside the bonding system 1. Specifically, the measured coordinates P1am (P1am ｘ , P1am ｙ ), P1bm (P1bm ｘ , P1bm ｙ ), and P1cm (P1cm ｘ , P1cm ｙ ) of at least three first alignment marks P1a, P1b, and P1c among the plurality of first alignment marks P1 are acquired.

[0098] Then, the acquisition unit 71a calculates the deviation amounts Δ １ａ , Δ １ｂ , and Δ １ｃ between the ideal coordinates P1ai, P1bi, and P1ci and the measured coordinates P1am, P1bm, and P1cm of the plurality of first alignment marks P1. Δ １ａ indicates the deviation amount between the ideal coordinate P1ai and the measured coordinate P1am of the first alignment mark P1a. Δ１ｂ This indicates the amount of deviation between the ideal coordinate P1bi of the first alignment mark P1b and the measured coordinate P1bm. １ｃ This shows the amount of deviation between the ideal coordinate P1ci of the first alignment mark P1c and the measured coordinate P1cm.

[0099] Furthermore, the acquisition unit 71a acquires second information relating to a plurality of second alignment marks P2. The second information is, for example, information relating to the deviation between the ideal position of each second alignment mark P3 on the substrate and the measured position. Specifically, the acquisition unit 71a receives information on the ideal position and the measured position of a plurality of second alignment marks P2 from outside the bonding system 1, for example, via a network such as a LAN. Subsequently, the acquisition unit 71a acquires the second information by calculating the deviation between the ideal position and the measured position based on the received position information. The acquisition unit 71a acquires the second information by, for example, an acquisition process similar to that for the first information.

[0100] The acquisition unit 71a may also acquire the first information and the second information directly from outside the joining system 1.

[0101] Furthermore, the acquisition unit 71a may, for example, acquire positional information of a plurality of first alignment marks P1 based on the imaging results of the lower imaging unit 236, and acquire positional information of a plurality of second alignment marks P2 based on the imaging results of the upper imaging unit 235, and use such positional information as the measured positions of the first alignment marks P1 and the second alignment marks P2.

[0102] The adjustment processing unit 71b adjusts the processing conditions for the bonding process that joins the upper wafer W1 and the lower wafer W2 based on the first and second information acquired by the acquisition unit 71a. As a result, the bonding apparatus 41 according to the embodiment can bond the upper wafer W1 and the lower wafer W2 under desired conditions.

[0103] The processing conditions for the bonding process include, for example, the in-plane position and orientation of the upper wafer W1 and the lower wafer W2. The adjustment process for the in-plane position and orientation of the upper wafer W1 and the lower wafer W2 will be described below with reference to Figures 7A and 7B.

[0104] First, the adjustment processing unit 71b calculates a reference line L1 of the upper wafer W1 by connecting two first alignment marks P1b and P1c provided on the upper wafer W1. Here, the first alignment marks P1b and P1c may be first alignment marks P1 located near both ends of the diameter of the upper wafer W1, among the first alignment marks P1 located on the outer periphery of the upper wafer W1 as described above. Alternatively, the first alignment marks P1b and P1c may be first alignment marks P1 located on the outer periphery of the upper wafer W1, near both ends of the diameter of the upper wafer W1, and where the amount of deviation between the ideal position (coordinates) acquired by the acquisition unit 71a and the measured position (coordinates) is small. The adjustment processing unit 71b calculates a reference line L1 that passes through the measured coordinates P1bm and P1cm of the two first alignment marks P1b and P1c, respectively.

[0105] Similarly, the adjustment processing unit 71b calculates a reference line L2 of the lower wafer W2 by connecting the two second alignment marks P2b and P2c provided on the lower wafer W2. Here, the second alignment marks P2b and P2c may be second alignment marks P2 located near both ends of the diameter of the lower wafer W2, among the second alignment marks P2 located on the outer periphery of the lower wafer W2 as described above. Alternatively, the second alignment marks P2b and P2c may be second alignment marks P2 located on the outer periphery of the lower wafer W2, near both ends of the diameter of the lower wafer W2, and the second alignment marks P2 in which the amount of deviation between the ideal position (coordinates) acquired by the acquisition unit 71a and the measured position (coordinates) is small. The adjustment processing unit 71b calculates a reference line L2 that passes through the measured coordinates P2bm and P2cm of the two second alignment marks P2b and P2c, respectively.

[0106] Next, the adjustment processing unit 71b controls the adjustment unit 256 based on the calculated reference lines of the upper wafer W1 and the lower wafer W2 to adjust the in-plane position and orientation of the upper wafer W1 and the lower wafer W2. Specifically, the adjustment processing unit 71b controls the adjustment unit 256 to adjust the in-plane position and orientation of the upper wafer W1 and the lower wafer W2 at the position and orientation where the reference line L1 of the upper wafer W1 and the reference line L2 of the lower wafer W2 overlap. This minimizes the amount of misalignment of all first alignment marks P1 and their corresponding second alignment marks P2 compared to simply adjusting the position and orientation to align one first alignment mark P1 with its corresponding second alignment mark P2. Therefore, the accuracy of bonding the upper wafer W1 and the lower wafer W2 can be improved.

[0107] The method for calculating the reference lines L1 and L2 is not limited to the method described above. For example, the adjustment processing unit 71b may calculate the reference line L1 such that the error between the ideal position and the measured position of three or more first alignment marks P1 is minimized. Similarly, the adjustment processing unit 71b may calculate the reference line L2 such that the error between the ideal position and the measured position of three or more second alignment marks P2 is minimized.

[0108] Furthermore, the processing conditions for the bonding process include, for example, the amount of deformation at the center of the lower wafer W2. The process for adjusting the amount of deformation at the center of the lower wafer W2 will be explained below with reference to Figures 7A and 7B.

[0109] The first information, as described above, is information regarding the deviation between the ideal position of each first alignment mark P1 on the substrate and the measured position. The first information may also include, for example, information regarding the difference between the distance at the ideal position and the distance at the measured position of two first alignment marks P1b and P1c located on the outer periphery of the upper wafer W1. Specifically, the first information may include information regarding the difference between the distance D1 between the ideal coordinate P1bi of the first alignment mark P1b and the ideal coordinate P1ci of the first alignment mark P1c, and the distance D2 between the measured coordinate P1bm of the first alignment mark P1b and the measured coordinate P1cm of the first alignment mark P1c.

[0110] Similarly, the second information may include, for example, information regarding the difference between the distance at the ideal position and the measured position of two second alignment marks P2b and P2c located on the outer periphery of the lower wafer W2. Specifically, the second information may include information regarding the difference between the distance D3 between the ideal coordinate P2bi of the second alignment mark P2b and the ideal coordinate P2ci of the second alignment mark P2c, and the distance D4 between the measured coordinate P2bm of the second alignment mark P2b and the measured coordinate P2cm of the second alignment mark P2c.

[0111] The adjustment processing unit 71b controls the deformation portion 313 of the lower chuck 231 based on the first and second information to adjust the amount of deformation at the center of the lower wafer W2. For example, the adjustment processing unit 71b adjusts the amount of deformation at the center of the lower wafer W2 based on the difference between distance D1 and distance D2 included in the first information. If distance D2 is greater than distance D1, the adjustment processing unit 71b controls the deformation portion 313 of the lower chuck 231 to increase the amount of deformation at the center of the lower wafer W2. On the other hand, if distance D2 is less than distance D1, the adjustment processing unit 71b decreases the amount of deformation at the center of the lower wafer W2.

[0112] If the distance D2 is greater than the distance D1, there is a risk that the upper wafer W1 is warped or distorted in a direction that causes the two first alignment marks P1b and P1c to move away from each other from their ideal positions. Therefore, the amount of deformation in the center of the lower wafer W2 is increased. As a result, the lower wafer W2 deforms in a direction that causes the two second alignment marks P2b and P2c of the lower wafer W2 to move away from each other. This makes it easier for the second alignment mark P2b to align with the first alignment mark P1b and for the second alignment mark P2c to align with the first alignment mark P1c when joined. Thus, the accuracy of joining the upper wafer W1 and the lower wafer W2 can be improved.

[0113] On the other hand, if the distance D2 is smaller than the distance D1, there is a risk that the upper wafer W1 may warp or be distorted in the direction that the two first alignment marks P1b and P1c move closer to each other from their respective ideal positions. Therefore, the amount of deformation in the center of the lower wafer W2 is reduced. As a result, the lower wafer W2 deforms in the direction that the two second alignment marks P2b and P2c move closer to each other, making it easier for the second alignment mark P2b to align with the first alignment mark P1b and for the second alignment mark P2c to align with the first alignment mark P1c when joined. Thus, the accuracy of joining the upper wafer W1 and the lower wafer W2 can be improved.

[0114] Furthermore, the adjustment processing unit 71b adjusts the amount of deformation at the center of the lower wafer W2 based on the distance D2 included in the first information and the distance D4 included in the second information. If distance D2 is the same as distance D4, the adjustment processing unit 71b does not change the amount of deformation at the center of the lower wafer W2. On the other hand, if distance D2 is different from distance D4, the adjustment processing unit 71b changes the amount of deformation at the center of the lower wafer W2. For example, if distance D2 is greater than distance D4, the adjustment processing unit 71b controls the deformation unit 313 so that the amount of deformation (protrusion) at the center of the upper wafer W1 is greater than the amount of deformation (protrusion) at the center of the lower wafer W2. Also, if distance D2 is less than distance D4, the adjustment processing unit 71b controls the deformation unit 313 so that the amount of deformation at the center of the upper wafer W1 is less than the amount of deformation at the center of the lower wafer W2. In this case, the adjustment processing unit 71b may adjust the amount of deformation of the center of the upper wafer W1 by controlling the deformation portion 114 of the upper chuck 230 instead of the deformation portion 313 of the lower chuck 231.

[0115] If distance D2 is the same as distance D4, it is considered that the upper wafer W1 and lower wafer W2 are either free from warping or distortion, or that warping or distortion occurs to the same degree. Therefore, by not changing the amount of deformation in the center of the lower wafer W2, the second alignment mark P2b is more likely to align with the first alignment mark P1b, and the second alignment mark P2c is more likely to align with the first alignment mark P1c when joined. Thus, the accuracy of joining the upper wafer W1 and lower wafer W2 can be improved.

[0116] The adjustment of the bonding process conditions by the adjustment processing unit 71b, that is, the adjustment of the position and orientation of the upper wafer W1 and lower wafer W2 in the in-plane direction and the adjustment of the amount of protrusion of the central part of the lower wafer W2, is performed for each of the upper wafer W1 and lower wafer W2.

[0117] The storage unit 72 is implemented by, for example, semiconductor memory elements such as RAM and flash memory, or storage devices such as hard disks and optical discs. The storage unit 72 stores information used for processing in the control unit 71.

[0118] <Specific Operation of the Joining System> Next, the specific operation of the joining system 1 according to the embodiment will be described with reference to Figure 8. Figure 8 is a flowchart showing the procedure of processing performed by the joining system 1 according to the embodiment. The various processes shown in Figure 8 are executed based on control by the control device 70.

[0119] First, cassette C1 containing multiple upper wafers W1, cassette C2 containing multiple lower wafers W2, and an empty cassette C3 are placed on a designated mounting plate 11 of the loading / unloading station 2. Then, the upper wafers W1 are removed from cassette C1 by the transport device 22 and transported to the transition device located in the third processing block G3.

[0120] Next, the upper wafer W1 is transported by the transport device 61 to the surface modification apparatus 30 of the first processing block G1. In the surface modification apparatus 30, under a predetermined reduced pressure atmosphere, oxygen gas, which is the processing gas, is excited, plasma-generated, and ionized. These oxygen ions are irradiated onto the bonding surface W1j of the upper wafer W1, and the bonding surface W1j is plasma-treated. As a result, the bonding surface W1j of the upper wafer W1 is modified (step S101).

[0121] Next, the upper wafer W1 is transported by the transport device 61 to the surface hydrophilization device 40 of the first processing block G1. In the surface hydrophilization device 40, pure water is supplied onto the upper wafer W1 while it is rotated, which is held in a spin chuck. This hydrophilizes the bonding surface W1j of the upper wafer W1. In addition, the bonding surface W1j of the upper wafer W1 is cleaned by the pure water (step S102).

[0122] Next, the upper wafer W1 is transported by the transport device 61 to the bonding device 41 of the second processing block G2. The upper wafer W1 that has been brought into the bonding device 41 is transported via the transition 200 to the position adjustment mechanism 210, where its horizontal orientation is adjusted (step S103).

[0123] Subsequently, the upper wafer W1 is transferred from the position adjustment mechanism 210 to the inversion mechanism 220, and the inversion mechanism 220 inverts the front and back surfaces of the upper wafer W1 (step S104). Specifically, the bonding surface W1j of the upper wafer W1 is oriented downwards. Next, the upper wafer W1 is transferred from the inversion mechanism 220 to the upper chuck 230, and the upper wafer W1 is held in place by the upper chuck 230 (step S105).

[0124] The processing of the lower wafer W2 is performed in overlap with the processing of the upper wafer W1 in steps S101 to S105. First, the lower wafer W2 is removed from the cassette C2 by the transport device 22 and transported to the transition device located in the third processing block G3.

[0125] Next, the lower wafer W2 is transported by the transport device 61 to the surface modification device 30, where the bonding surface W2j of the lower wafer W2 is modified (step S106). After that, the lower wafer W2 is transported by the transport device 61 to the surface hydrophilization device 40, where the bonding surface W2j of the lower wafer W2 is hydrophilized and the bonding surface W2j is cleaned (step S107).

[0126] Subsequently, the lower wafer W2 is transported to the bonding apparatus 41 by the transport device 61. The lower wafer W2, once loaded into the bonding apparatus 41, is transported to the position adjustment mechanism 210 via the transition 200. The position adjustment mechanism 210 then adjusts the horizontal orientation of the lower wafer W2 (step S108).

[0127] Subsequently, the lower wafer W2 is transported to the lower chuck 231 and held by the lower chuck 231 with the notch portion facing a predetermined direction (step S109).

[0128] Next, first information relating to a plurality of first alignment marks P1 (see Figure 7A) provided on the upper wafer W1 is acquired (step S110), and second information relating to a plurality of second alignment marks P2 (see Figure 7B) provided on the lower wafer W2 is acquired (step S111).

[0129] Next, the processing conditions for bonding the upper wafer W1 and the lower wafer W2 are adjusted (step S112). Specifically, the adjustment unit 256 adjusts the in-plane position and orientation of the upper wafer W1 held by the upper chuck 230 and the lower wafer W2 held by the lower chuck 231. In addition, the deformation unit 313 adjusts the amount of protrusion of the central part of the lower wafer W2. Details of the processing in step S112 will be described later.

[0130] Subsequently, the lower wafer W2 is raised using the first moving part 250 to join the upper wafer W1 and the lower wafer W2 (step S113). Specifically, after raising the lower wafer W2, the center of the upper wafer W1 is pressed downward from above using the cylinder 114b of the deformation part 114 to bring it into contact with the center of the lower wafer W2, thereby joining the upper wafer W1 and the lower wafer W2.

[0131] The order in which the first and second pieces of information are obtained may be reversed, or they may be obtained simultaneously.

[0132] Next, an example of a specific procedure for adjusting the processing conditions for the bonding process of the upper wafer W1 and the lower wafer W2 in step S112 will be described with reference to Figure 9. Figure 9 is a flowchart showing an example of a specific procedure for the process shown in step S112.

[0133] First, the control unit 71 calculates a reference line for the upper wafer W1 based on the first information acquired in step S110 (step S201). Specifically, the control unit 71 calculates a reference line connecting two first alignment marks P1b and P1c (see Figure 7A) located on the outer periphery of the plurality of first alignment marks P1 on the upper wafer W1.

[0134] Next, the control unit 71 calculates a reference line for the lower wafer W2 based on the second information acquired in step S111 (step S202). Specifically, the control unit 71 calculates a reference line connecting two second alignment marks P2b and P2c (see Figure 7B) located on the outer periphery of the plurality of second alignment marks P2 on the lower wafer W2.

[0135] Next, the control unit 71 adjusts the in-plane position and orientation of the upper wafer W1 and the lower wafer W2 based on the reference line of the upper wafer W1 calculated in step S201 and the reference line of the lower wafer W2 calculated in step S202 (step S203). Specifically, the control unit 71 controls at least one of the adjustment unit (not shown) of the upper chuck 230 and the adjustment unit 256 of the lower chuck 231 to adjust the in-plane position and orientation of the upper wafer W1 and the lower wafer W2 so that the reference line of the upper wafer W1 and the reference line of the lower wafer W2 overlap when joined.

[0136] Next, the control unit 71 adjusts the amount of protrusion of the holding portion 311 based on the first information acquired in step S110 and the second information acquired in step S111, thereby adjusting the amount of protrusion of the central portion of the lower wafer W2.

[0137] In this example, we show how to adjust the processing conditions for bonding by adjusting the in-plane position and orientation of the upper wafer W1 and the lower wafer W2, and the amount of protrusion of the central part of the lower wafer W2. However, it is also possible to adjust only one of these.

[0138] Furthermore, the control unit 71 may perform feedback control using the bonding result after adjustment in step S112. Specifically, the bonding result after adjustment in step S112 is stored in a storage unit 72 or the like. The control unit 71 may calculate the difference between this bonding result and the bonding prediction when bonding is performed at the ideal position of the first alignment mark P1 on the upper wafer W1 and the ideal position of the second alignment mark P2 on the lower wafer W2, and use the calculated difference to adjust the processing conditions of the bonding process in the adjustment process of the next step S112.

[0139] As described above, the bonding program according to the embodiment causes a computer to execute the following steps: a procedure to acquire first information relating to a plurality of first alignment marks P1 provided on the upper wafer W1, which concerns the deviation between the ideal position of each first alignment mark P1 on the substrate and the measured position; a procedure to acquire second information relating to a plurality of second alignment marks P2 provided on the lower wafer W2, which concerns the deviation between the ideal position of each second alignment mark P2 on the substrate and the measured position; and a procedure to adjust the processing conditions for bonding the upper wafer W1 and the lower wafer W2 based on the first and second information acquired in the acquisition procedure. By adjusting the processing conditions in the bonding process using the first and second information in this way, bonding defects caused by the deviation between the ideal position of the first alignment mark P1 and the measured position, and the deviation between the ideal position of the second alignment mark P2 and the measured position, can be reduced, and the accuracy of bonding the upper wafer W1 and the lower wafer W2 can be improved.

[0140] Furthermore, this technology can also be configured as follows: (1) A bonding program that causes a computer to execute a procedure for acquiring first information relating to a plurality of first alignment marks provided on a first substrate, wherein the first information relates to the deviation between the ideal position of each first alignment mark on the substrate and the measured position; a procedure for acquiring second information relating to a plurality of second alignment marks provided on a second substrate, wherein the second information relates to the deviation between the ideal position of each second alignment mark on the substrate and the measured position; and a procedure for adjusting the processing conditions for bonding the first substrate and the second substrate based on the first and second information acquired in the acquisition procedure. (2) The bonding program according to (1), wherein the processing condition is the amount of deformation of the central part of the second substrate. (3) The bonding program according to (2), wherein the first information includes information regarding the difference between the distance between two of the plurality of first alignment marks provided on the outer periphery of the first substrate at their ideal positions on the substrate and the distance between them at their measured positions, and the adjustment procedure, based on the first information, increases the amount of deformation if the distance between the two of the first alignment marks at their measured positions is greater than the distance between them at their ideal positions on the substrate. (4) The bonding program according to (2), wherein the first information includes information regarding the difference between the distance between two of the plurality of first alignment marks provided on the outer periphery of the first substrate at their ideal positions on the substrate and the distance between them at their measured positions, and the adjustment procedure, based on the first information, decreases the amount of deformation if the distance between the two of the first alignment marks at their measured positions is less than the distance between them at their ideal positions on the substrate.(5) The bonding program according to (2), wherein the first information includes information relating to the difference between the distance at the ideal position on the substrate and the measured position of two of the plurality of first alignment marks provided on the outer periphery of the first substrate, and the second information includes information relating to the difference between the distance at the ideal position on the substrate and the measured position of two of the plurality of second alignment marks provided on the outer periphery of the second substrate, and the adjustment procedure is to adjust the amount of deformation based on the first information and the second information if the difference between the distance at the measured position of the two first alignment marks and the measured position of the two second alignment marks is greater than or equal to a threshold. (6) The bonding program according to (1), wherein the processing conditions are the position and orientation of the first substrate and the second substrate in the in-plane direction. (7) The bonding program described in (6), wherein the adjustment procedure involves connecting two of the plurality of first alignment marks that have a small deviation between their ideal position on the substrate and their measured position to calculate a reference line for the first substrate, connecting two of the plurality of second alignment marks that have a small deviation between their ideal position on the substrate and their measured position to calculate a reference line for the second substrate, and adjusting the in-plane position and orientation of the first substrate and the second substrate at the position and orientation in which the reference line of the first substrate and the reference line of the second substrate overlap.(8) A first transport device for transporting a first substrate and a second substrate in an atmospheric pressure environment; a surface modification device for modifying the surfaces of the first substrate and the second substrate to be joined in a reduced pressure environment; a load lock chamber in which the first substrate and the second substrate are transferred between the first transport device and the surface modification device, and in which the atmosphere in the chamber can be switched between an atmospheric atmosphere and a reduced pressure environment; a transport chamber adjacent to the load lock chamber, in which a second transport device is arranged for transporting the first substrate and the second substrate in a reduced pressure environment between the load lock chamber and the surface modification device; a surface hydrophilization device for hydrophilizing the surfaces of the first substrate and the second substrate modified by the surface modification device; and a joining device for joining the first substrate and the second substrate that have been hydrophilized by the surface hydrophilization device, wherein the joining device is A bonding system comprising: an acquisition unit that acquires information relating to a plurality of first alignment marks provided on the first substrate, wherein first information relating to the deviation between the ideal position of each first alignment mark on the substrate and the measured position; and second information relating to a plurality of second alignment marks provided on the second substrate, wherein second information relating to the deviation between the ideal position of each second alignment mark on the substrate and the measured position; and an adjustment processing unit that adjusts the processing conditions for a bonding process to bond the first substrate and the second substrate based on the first information and the second information acquired by the acquisition unit. (9) A bonding method comprising: a step of acquiring first information relating to a plurality of first alignment marks provided on a first substrate, wherein the first information relating to the deviation between the ideal position of each first alignment mark on the substrate and the measured position; a step of acquiring second information relating to a plurality of second alignment marks provided on a second substrate, wherein the second information relating to the deviation between the ideal position of each second alignment mark on the substrate and the measured position; and a step of adjusting the processing conditions for a bonding process to bond the first substrate and the second substrate based on the first information and the second information acquired in the acquisition step.

[0141] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0142] 1 Bonding system 30 Surface modification device 40 Surface hydrophilization device 41 Bonding device 70 Control device 71 Control unit 71a Acquisition unit 71b Adjustment unit 114, 313 Deformation unit 230 Upper chuck 231 Lower chuck 256 Adjustment unit T Polymerized wafer W1 Upper wafer W2 Lower wafer

Claims

1. A bonding program that causes a computer to execute the following steps:

1. A procedure for acquiring first information relating to a plurality of first alignment marks provided on a first substrate, wherein the first information relates to the deviation between the ideal position of each first alignment mark on the substrate and the measured position; 2. A procedure for acquiring second information relating to a plurality of second alignment marks provided on a second substrate, wherein the second information relates to the deviation between the ideal position of each second alignment mark on the substrate and the measured position; and 3. A procedure for adjusting the processing conditions of a bonding process that bonds the first substrate and the second substrate based on the first and second information acquired in the acquisition procedure.

2. The bonding program according to claim 1, wherein the processing condition is the amount of deformation of the central part of the second substrate.

3. The bonding program according to claim 2, wherein the first information includes information relating to the difference between the distance between two of the plurality of first alignment marks provided on the outer periphery of the first substrate at their ideal positions on the substrate and the distance between them at their measured positions, and the adjustment procedure, based on the first information, increases the amount of deformation if the distance between the two first alignment marks at their measured positions is greater than the distance between them at their ideal positions on the substrate.

4. The bonding program according to claim 2, wherein the first information includes information relating to the difference between the distance between two of the plurality of first alignment marks provided on the outer periphery of the first substrate at their ideal positions on the substrate and the distance between them at their measured positions, and the adjustment procedure, based on the first information, reduces the amount of deformation if the distance between the two first alignment marks at their measured positions is smaller than the distance between them at their ideal positions on the substrate.

5. The bonding program according to claim 2, wherein the first information includes information relating to the difference between the distance between two of the plurality of first alignment marks provided on the outer periphery of the first substrate at their ideal positions on the substrate and the distance between them at their measured positions, and the second information includes information relating to the difference between the distance between two of the plurality of second alignment marks provided on the outer periphery of the second substrate at their ideal positions on the substrate and the distance between them at their measured positions, and the adjustment procedure adjusts the amount of deformation based on the first information and the second information if the difference between the distance between the two of the first alignment marks at their measured positions and the distance between the two of the second alignment marks at their measured positions is greater than or equal to a threshold.

6. The bonding program according to claim 1, wherein the processing conditions are the position and orientation of the first substrate and the second substrate in the in-plane direction.

7. The bonding program according to claim 6, wherein the adjustment procedure involves connecting two of the plurality of first alignment marks that have a small deviation between their ideal position on the substrate and their measured position to calculate a reference line for the first substrate, connecting two of the plurality of second alignment marks that have a small deviation between their ideal position on the substrate and their measured position to calculate a reference line for the second substrate, and adjusting the in-plane position and orientation of the first substrate and the second substrate at the position and orientation in which the reference line of the first substrate and the reference line of the second substrate overlap.

8. The apparatus includes: a first transport device for transporting a first substrate and a second substrate in an atmospheric pressure environment; a surface modification device for modifying the surfaces of the first substrate and the second substrate to be joined in a reduced pressure environment; a load lock chamber in which the first substrate and the second substrate are transferred between the first transport device and the surface modification device, and in which the atmosphere in the chamber can be switched between an atmospheric atmosphere and a reduced pressure environment; a transport chamber adjacent to the load lock chamber, in which a second transport device is arranged for transporting the first substrate and the second substrate in a reduced pressure environment between the load lock chamber and the surface modification device; a surface hydrophilization device for hydrophilizing the surfaces of the first substrate and the second substrate modified by the surface modification device; and a joining device for joining the first substrate and the second substrate that have been hydrophilized by the surface hydrophilization device, wherein the joining device is A bonding system comprising: an acquisition unit that acquires information relating to a plurality of first alignment marks provided on the first substrate, wherein first information relating to the deviation between the ideal position of each first alignment mark on the substrate and the measured position; and second information relating to a plurality of second alignment marks provided on the second substrate, wherein second information relating to the deviation between the ideal position of each second alignment mark on the substrate and the measured position; and an adjustment processing unit that adjusts the processing conditions for a bonding process to bond the first substrate and the second substrate based on the first information and the second information acquired by the acquisition unit.

9. A bonding method comprising: a step of acquiring first information relating to a plurality of first alignment marks provided on a first substrate, wherein the first information relates to the deviation between the ideal position of each first alignment mark on the substrate and the measured position; a step of acquiring second information relating to a plurality of second alignment marks provided on a second substrate, wherein the second information relates to the deviation between the ideal position of each second alignment mark on the substrate and the measured position; and a step of adjusting the processing conditions for a bonding process to bond the first substrate and the second substrate based on the first information and the second information acquired in the acquisition step.

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