Radio frequency switch and radio frequency chip

Abstract

The present application relates to the technical field of radio frequency switches. Provided are a radio frequency switch and a radio frequency chip. The radio frequency switch comprises a substrate, a semiconductor layer, an island electrode group, and an interdigital electrode group. The semiconductor layer comprises at least one semiconductor pattern, the semiconductor pattern comprising a first region, a second region and a third region, and the interdigital electrode group comprises a first electrode and a second electrode, wherein the first electrode is electrically connected to the first region, and the second electrode is electrically connected to the second region, and an orthographic projection of the third region on the substrate overlaps an orthographic projection of the island electrode group on the substrate. The radio frequency switch has good operating performance and high reliability.

Description

RF switches and RF chips Technical Field

[0001] This application relates to the field of display technology, and in particular to a light-emitting substrate, a backlight module, and a display device. Background Technology

[0002] Radio frequency switches can connect any one or more of multiple radio frequency signals through control logic to achieve switching between different model paths, including switching between receiving and transmitting, and switching between different frequency bands, so as to achieve the purpose of sharing antennas and saving terminal product costs.

[0003] In related technologies, the on-state resistance of RF switches is an important parameter affecting the performance of RF switches, and how to reduce the on-state resistance is a research hotspot in the industry. Summary of the Invention

[0004] The embodiments of this application adopt the following technical solutions:

[0005] In a first aspect, embodiments of this application provide a radio frequency switch, comprising:

[0006] Substrate;

[0007] A semiconductor layer, located on one side of the substrate, includes at least one semiconductor pattern; the semiconductor pattern includes a first region, a second region, and a third region located between the first region and the second region;

[0008] At least one island electrode group is located on the side of the semiconductor layer away from the substrate, and the island electrode group includes at least one island electrode;

[0009] At least one interdigitated electrode group, including a first electrode and a second electrode that are not connected to each other; the first electrode is electrically connected to the first region, and the second electrode is electrically connected to the second region;

[0010] The work function of the semiconductor pattern is different from that of the island electrode group, and the orthographic projection of the third region on the substrate overlaps with the orthographic projection of the island electrode group on the substrate.

[0011] In some embodiments of the radio frequency switch provided in this application, both the first electrode and the second electrode extend along a first direction, and on a plane parallel to the substrate, the first electrode and the second electrode are alternately arranged along a second direction; the second direction intersects the first direction.

[0012] In the second direction, the size of the island-shaped electrode group is smaller than the distance between the first electrode and the second electrode.

[0013] In some embodiments of the radio frequency switch provided in this application, the outer contour of the orthogonal projection of the island electrode group on the substrate is located within the outer contour of the orthogonal projection of the third region on the substrate.

[0014] In some embodiments of the radio frequency switch provided in this application, the size of the island electrode group is equal to the size of the third region in the second direction.

[0015] In some embodiments of the radio frequency switch provided in this application, the island electrode group includes a plurality of island electrodes;

[0016] The multiple island-shaped electrodes are arranged at equal intervals along the first direction.

[0017] And / or,

[0018] The multiple island-shaped electrodes are arranged at equal intervals along the second direction.

[0019] In some embodiments of the radio frequency switch provided in this application, when the plurality of island electrodes are arranged at equal intervals along the first direction,

[0020] In the first direction, the distance between two adjacent island electrodes in the same island electrode group is approximately equal to the minimum distance between the outer contour of the island electrode group and the edge of the third region.

[0021] In some embodiments of the radio frequency switch provided in this application, when the plurality of said island electrodes are arranged at equal intervals along the second direction,

[0022] In the second direction, the distance between two adjacent island electrodes in the same island electrode group is approximately equal to the minimum distance between the outer contour of the island electrode group and the edge of the third region.

[0023] In some embodiments of the radio frequency switch provided in this application, the size of the island electrode group is larger than the size of the third region in the second direction.

[0024] In some embodiments of the radio frequency switch provided in this application, the orthographic projection of the island electrode group on the substrate overlaps with the orthographic projection of the first region on the substrate.

[0025] And / or,

[0026] The orthographic projection of the island electrode group on the substrate overlaps with the orthographic projection of the second region on the substrate.

[0027] In some embodiments of the radio frequency switch provided in this application, the interdigitated electrode group and the island electrode group are arranged in the same layer.

[0028] In some embodiments of the radio frequency switch provided in this application, the interdigitated electrode group and the island electrode group are disposed in different layers;

[0029] The plurality of island-shaped electrode groups are disposed in the first conductive layer, which is located on the side of the semiconductor layer away from the substrate;

[0030] The plurality of interdigitated electrode groups are disposed in the second conductive layer, which is located on the side of the first conductive layer away from the substrate.

[0031] In some embodiments of the radio frequency switch provided in this application, the first conductive layer further includes a first contact electrode and a second contact electrode. The first electrode is electrically connected to the first region through the first contact electrode, and the second electrode is electrically connected to the second region through the second contact electrode.

[0032] In some embodiments of the radio frequency switch provided in this application, an insulating layer is further provided between the first conductive layer and the semiconductor layer. The insulating layer is provided with a plurality of first through holes and a plurality of second through holes. The orthographic projection of the first through hole on the semiconductor layer falls into the first region, and the orthographic projection of the second through hole on the semiconductor layer falls into the second region.

[0033] The first electrode is electrically connected to the first region through the first through hole, and the second electrode is electrically connected to the second region through the second through hole;

[0034] Wherein, in a direction parallel to the substrate, the minimum distance between the first via and the third region is less than or equal to the minimum distance between the geometric center of the first region and the third region; the minimum distance between the second via and the third region is less than or equal to the minimum distance between the geometric center of the second region and the third region.

[0035] In some embodiments of the radio frequency switch provided in this application, the plurality of semiconductor patterns are connected as a whole along the second direction, the first region is a P region, the second region is an N region, and the third region is an I region;

[0036] The plurality of semiconductor patterns are arranged in the order of P region, I region, N region, I region, P region, I region, and N region.

[0037] In some embodiments of the radio frequency switch provided in this application, the interdigitated electrode group includes a plurality of first branch groups arranged along a first direction, the first branch groups being located in the region between the first electrode and the second electrode;

[0038] The first branch group includes a first branch and a second branch extending along a second direction, wherein the first branch is electrically connected to the first electrode and the second branch is electrically connected to the second electrode;

[0039] The orthographic projection of the first branch along the first direction onto the second branch within the same first branch group overlaps with the second branch.

[0040] In at least a portion of the semiconductor patterns, the orthographic projection of one of the semiconductor patterns on the substrate overlaps with the first branch and the second branch within the same first branch group, respectively.

[0041] In some embodiments of the radio frequency switch provided in this application, the interdigitated electrode group includes a plurality of second branch groups arranged along the first direction, and a row of first branch groups and a row of second branch groups are alternately arranged in the region between the first electrode and the second electrode along the second direction;

[0042] The second branch group includes a third branch and a fourth branch extending along the second direction. The third branch is electrically connected to the first electrode, and the fourth branch is electrically connected to the second electrode. The orthographic projection of the third branch on the fourth branch along the first direction within the same second branch group overlaps with the fourth branch.

[0043] In some of the semiconductor patterns, the orthographic projection of one of the semiconductor patterns on the substrate overlaps with the first branch and the second branch in the same first branch group, respectively. In some of the semiconductor patterns, the orthographic projection of one of the semiconductor patterns on the substrate overlaps with the third branch and the fourth branch in the same second branch group, respectively.

[0044] In some embodiments of the radio frequency switch provided in this application, the first region is a P region, the second region is an N region, and the third region is an I region;

[0045] In the semiconductor pattern that overlaps with the same first branch group, the N region, the I region and the P region are arranged sequentially along the first direction;

[0046] In the semiconductor pattern that overlaps with the same second branch group, the P region, the I region and the N region are arranged sequentially along the first direction.

[0047] In some embodiments of the radio frequency switch provided in this application, the number of island electrode groups is equal to the sum of the number of the first branch group and the second branch group.

[0048] In some embodiments of the radio frequency switch provided in this application, the linewidths of the first branch, the second branch, the third branch, and the fourth branch along the first direction are approximately equal. When the linewidth of the first branch is less than a preset value,

[0049] The orthographic projection of the island electrode group on the substrate overlaps with the orthographic projection of at least one of the first branch group and the second branch group on the substrate.

[0050] In some embodiments of the radio frequency switch provided in this application, each of the island electrodes in the same radio frequency switch is electrically connected together and used to transmit voltage control signals.

[0051] In some embodiments of the radio frequency switch provided in this application, the island electrode includes a hollowed-out area.

[0052] The planar shape of the island electrode's orthogonal projection onto the substrate is ring-shaped.

[0053] In some embodiments of the radio frequency switch provided in this application, the outer contour of the annular shape is the same as the outer contour of the planar pattern of the third region.

[0054] In some embodiments of the radio frequency switch provided in this application, at least one of the planar pattern of the annular outer contour and the planar pattern of the annular inner contour is a concave polygon.

[0055] In some embodiments of the radio frequency switch provided in this application, the width of the ring is greater than 0 and less than or equal to 1 μm.

[0056] In some embodiments of the radio frequency switch provided in this application, the orthographic projections of the first electrode, the second electrode, and the island electrode on the substrate are all helical; the orthographic projection of the island electrode on the substrate is located between the orthographic projections of the first electrode and the second electrode on the substrate;

[0057] The orthographic projection of the semiconductor pattern on the substrate overlaps with the island electrode in the presence of the substrate.

[0058] In some embodiments of the radio frequency switch provided in this application, the radio frequency switch further includes a first conductive structure and a second conductive structure, wherein the first conductive structure is disposed in the same layer as the island electrode, and the second conductive structure is disposed in the same layer as the second electrode;

[0059] The first conductive structure and the second conductive structure are both spiral-shaped when projected onto the substrate, and a passivation layer and / or an insulating layer are disposed between the first conductive structure and the second conductive structure.

[0060] The radio frequency switch includes a diode, wherein one of the first electrode and the second electrode serves as the positive terminal of the diode, and the other serves as the negative terminal of the diode;

[0061] The radio frequency switch further includes an inductor, wherein the first conductive structure and the second conductive structure are electrically connected to form the coil of the inductor.

[0062] In some embodiments of the radio frequency switch provided in this application, the orthographic projections of the first electrode on the substrate and the second electrode on the substrate do not overlap with the orthographic projections of the third region on the substrate;

[0063] When the interdigitated electrode group includes a first branch group and a second branch group, the orthographic projections of the first branch group on the substrate and the second branch group on the substrate do not overlap with the orthographic projections of the third region on the substrate.

[0064] In some embodiments of this application, the radio frequency switch includes a first connecting line and a second connecting line extending along the second direction. The first connecting line is used to electrically connect a plurality of first electrodes together, and the second connecting line is used to connect a plurality of second electrodes together.

[0065] In some embodiments of the radio frequency switch provided in this application, the radio frequency switch further includes a buffer layer, the insulating layer, and a passivation layer;

[0066] The buffer layer is located between the substrate and the semiconductor layer, the insulating layer is located on the side of the semiconductor layer away from the substrate, and the passivation layer is located between the first conductive layer and the second conductive layer.

[0067] Secondly, embodiments of this application provide a radio frequency chip, which includes a radio frequency switch as described in any one of the first aspects.

[0068] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, the following are specific embodiments of this application. Attached Figure Description

[0069] To more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the drawings used in the description of the embodiments or prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0070] Figures 1 to 3 are top view schematic diagrams of the three radio frequency switches provided in the embodiments of this application;

[0071] Figures 4A and 4B are schematic diagrams illustrating two energy level relationships between island electrodes and semiconductor patterns provided in embodiments of this application;

[0072] Figures 5A (1) to (3), Figure 5B (1) to (3), Figure 6 (1) to (3), and Figure 7 (1) to (3) are schematic diagrams of the positional relationship between the twelve island electrode groups and the third region provided in the embodiments of this application;

[0073] Figure 8 is a simulation diagram of the carrier distribution density in an island electrode provided by an embodiment of this application;

[0074] Figure 9 is a schematic diagram of the cross-sectional structure along the M1M2 direction in Figure 1;

[0075] Figure 10 is a schematic diagram of another radio frequency switch cross-sectional structure provided in an embodiment of this application;

[0076] Figure 11 is a comparison curve of the electrical performance of the radio frequency switch provided in the embodiment of this application and the radio frequency switch in the related art;

[0077] Figures 12 to 14 are top view structural diagrams of three other radio frequency switches provided in the embodiments of this application;

[0078] Figure 15 is a schematic diagram of the cross-sectional structure along the M3M4 direction in Figure 12;

[0079] Figure 16 is a schematic diagram of another radio frequency switch cross-sectional structure provided in an embodiment of this application;

[0080] Figures 17 (1) to (3), 18 (1) to (3), 19 (1) to (3), and 20 (1) to (3) are schematic diagrams of the positional relationship between the twelve island electrode groups and the third region provided in the embodiments of this application;

[0081] Figure 21 is a top view of the radio frequency switch with a voltage control signal line provided in an embodiment of this application;

[0082] Figure 22 is a comparison curve of the electrical performance of the RF switch shown in Figure 21 when different voltages are applied to the voltage control signal line;

[0083] Figures 23 and 25 are top views of the radio frequency switch when the semiconductor patterns are connected as a single unit, according to the embodiments of this application.

[0084] Figures 24(1) and (2) are structural comparisons of the RF switch in Figure 23 before and after the semiconductor patterns are connected as one unit;

[0085] Figures 26 and 28 are top view schematic diagrams of two other radio frequency switches provided in the embodiments of this application;

[0086] Figures 27(1) and (2) are top view schematic diagrams of two types of first branches, second branches, island electrodes and semiconductor patterns;

[0087] Figures (1) to (4) in Figure 29 are schematic diagrams of the top view structure of four types of island electrodes and semiconductor patterns;

[0088] Figures (1) to (12) in Figure 30 are schematic diagrams of twelve concave polygons provided in the embodiments of this application;

[0089] Figure 31 is a top view of the positional relationship between an island electrode and a third region provided in an embodiment of this application;

[0090] Figure 32 is a schematic cross-sectional view of another radio frequency switch provided in an embodiment of this application;

[0091] Figure 33 is a top view of a spiral radio frequency switch provided in an embodiment of this application;

[0092] Figure 34 is a cross-sectional structural diagram of an RF switch including a diode and an inductor provided in an embodiment of this application. Specific Implementation

[0093] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0094] A PIN RF switch is a commonly used switching element in radio frequency (RF) circuits. It consists of three regions: a positive carrier region (P-type, P-region), an intrinsic (I-region), and a loaded carrier region (N-type, N-region), hence the name PIN. PIN RF switches are typically used for high-frequency signal control and modulation, and are widely used in wireless communication, radar, RFID, medical imaging, and other RF systems. In practical applications, under forward current, holes and electrons are injected into the I-layer. These charges do not immediately cancel each other out but are retained for a certain period, thus generating and storing a certain amount of charge in the active semiconductor layer. This charge reduces the impedance of the I-layer, allowing RF signals to pass through. When the current input to the PIN is reverse biased, the I-layer does not store charge, and the PIN diode behaves as a parallel combination of a capacitor and a resistor, acting as a disconnector in the RF circuit.

[0095] The on-state resistance of an RF switch is a crucial parameter, affecting its insertion loss, linearity, response time, and other performance characteristics. Therefore, researching ways to reduce the on-state resistance of RF switches is essential. The main factors influencing on-state resistance include the series resistance between the positive carrier region (P-region) and the loaded carrier region (N-region), and the forward modulation resistance of the semiconductor material in the carrier-free region (I-region). The I-region resistance is directly affected by carrier lifetime and carrier recombination probability, being directly proportional to carrier lifetime and inversely proportional to recombination probability.

[0096] Based on this, embodiments of this application provide a radio frequency switch and a radio frequency chip. The radio frequency switch includes a substrate, a semiconductor layer, an island electrode group, and an interdigitated electrode group. The semiconductor layer includes at least one semiconductor pattern, which includes a first region, a second region, and a third region. The interdigitated electrode group includes a first electrode and a second electrode. The first electrode is electrically connected to the first region, and the second electrode is electrically connected to the second region. The work function of the semiconductor pattern is different from that of the island electrode group, and the orthographic projection of the third region on the substrate overlaps with the orthographic projection of the island electrode group on the substrate. The radio frequency switch provided in the embodiments of this application, by setting an island-shaped electrode group and making the orthographic projection of the third region on the substrate overlap with the orthographic projection of the island-shaped electrode group on the substrate, when the radio frequency switch is turned on, due to the difference in work function between the semiconductor layer and the island-shaped electrodes, a surface potential exists on the surface of the third region of the semiconductor pattern, and a potential difference exists between the surface of the third region and the interior of the third region. At this time, holes and electrons in the third region are spatially separated under the action of the potential difference, thereby reducing the probability of carrier recombination, increasing the lifetime of carriers in the third region, and thus reducing the on-state resistance of the radio frequency switch and improving the performance of the radio frequency switch.

[0097] The radio frequency switch and radio frequency chip provided in the embodiments of this application will be described and explained in detail below with reference to the accompanying drawings.

[0098] The embodiments of this application adopt the following technical solutions:

[0099] Embodiments of this application provide a radio frequency switch, wherein, as shown in Figures 1-3, 12-14, 9, 10, 15, and 16, it includes:

[0100] Substrate Gls;

[0101] The semiconductor layer Active, located on one side of the substrate Gls, includes at least one semiconductor pattern ACT; the semiconductor pattern ACT includes a first region, a second region, and a third region (e.g., a region marked I) located between the first and second regions; wherein the first and second regions are regions that have undergone conductor treatment; one of the first and second regions is a P-type doped region (e.g., a region marked P), and the other is an N-type doped region (e.g., a region marked N);

[0102] At least one island electrode group FGG is located on the side of the semiconductor layer Active away from the substrate Gls, and the island electrode group FGG includes at least one island electrode FG (Float Gate).

[0103] At least one interdigitated electrode group E includes a first electrode E1 and a second electrode E2 that are not connected to each other; the first electrode E1 is electrically connected to a first region, and the second electrode E2 is electrically connected to a second region.

[0104] Among them, the work function of the semiconductor pattern ACT is different from that of the island electrode group FGG, and the orthogonal projection of the third region on the substrate Gls overlaps with the orthogonal projection of the island electrode group FGG on the substrate Gls.

[0105] In an exemplary embodiment, the substrate Gls may be made of one or more materials selected from polyimide, polycarbonate, polyacrylate, polyetherimide, and polyethersulfone, and this embodiment includes, but is not limited to, these materials.

[0106] In an exemplary embodiment, the substrate Gls can be a glass substrate, for example, the thickness of the glass substrate can be in the range of 0.3 mm to 0.7 mm, specifically, its thickness can be 0.3 mm, 0.4 mm, 0.5 mm or 0.6 mm.

[0107] Among them, glass substrates have better resistivity than other plastic or resin insulating substrates. Therefore, when used in radio frequency switches, they can reduce radio frequency signal leakage and improve signal transmission stability.

[0108] The number of PIN diodes disposed on the glass substrate Gls is not limited here. Each diode includes a first electrode, a second electrode, an island-shaped electrode group, and a semiconductor pattern.

[0109] In some examples, a diode can be placed on the glass substrate Gls.

[0110] In some examples, multiple diodes can be placed on the glass substrate Gls, where multiple means two or more.

[0111] For example, multiple diodes arranged in an array can be disposed on the glass substrate Gls.

[0112] For example, the material of the semiconductor layer Sc may include silicon, in which case the glass substrate Gls and the semiconductor layer Sc may be bonded together using a bonding process.

[0113] For example, silicon materials can include monocrystalline silicon (c-Si), polycrystalline silicon (P-Si), and low-temperature polycrystalline silicon (LTPS). Among them, LTPS can be crystallized by excimer laser annealing (ELA) or laser activation.

[0114] For example, the material of the semiconductor layer Sc may include oxide materials, such as IGZO (Indium Gallium Zinc Oxide) and ITZO (Indium Tin Zinc Oxide).

[0115] Figure 1 shows the case where the island electrode group FGG includes one island electrode FG (Float Gate); Figure 2 shows the case where the island electrode group FGG includes two island electrodes FG (Float Gate); Figure 3 shows the case where the island electrode group FGG includes five island electrodes FG (Float Gate). Figures 1-3 all show three interdigitated electrode groups E. In practical applications, the number of interdigitated electrode groups E included in the RF switch can be set according to the switch performance requirements, and is not limited here.

[0116] In an exemplary embodiment, the materials of the interdigital electrode group E and the island electrode group FGG can be metals, such as one or more combinations of copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo).

[0117] For example, the material of at least one of the interdigitated electrode group E and the island electrode group FGG may include aluminum (Al), for example, a Mo / Al / Mo stack structure can be formed by sputtering, wherein the material closer to the glass substrate Gls is Mo, and the thickness is approximately [missing information]. The film, approximately [thickness value missing], is primarily used to improve the adhesion between film layers. The middle layer of the stacked structure is made of Al, serving as the material for electrical signal transmission. The material on the side furthest from the glass substrate (Gls) is Mo, with a thickness of approximately [thickness value missing]. The left and right sides can be used to protect the intermediate layer and prevent oxidation of the low resistivity intermediate layer surface.

[0118] For example, the material of at least one of the interdigitated electrode group E and the island electrode group FGG may include copper (Cu), for example, a stacked structure such as MoNb / Cu / MoNb formed by sputtering, wherein the material on the side closest to the glass substrate Gls is MoNb, with a thickness of approximately [missing information]. The film, approximately [thickness value missing], is primarily used to improve the adhesion between film layers. The middle layer of the stacked structure is made of Cu, serving as the material for electrical signal transmission. The material on the side furthest from the glass substrate (Gls) is MoNb, with a thickness of approximately [thickness value missing]. The area around the edge can be used to protect the intermediate layer, preventing oxidation of the low-resistivity surface. Since the thickness of a single sputtering is generally no more than 1 μm, multiple sputtering processes are required to form a thickness exceeding 1 μm.

[0119] In addition, thicker copper metal layers can be formed through electroplating. For example, a seed layer can be formed first using MoNiTi (or MTD alloy / Cu) to increase the nucleation density of metal grains in subsequent electroplating processes. Then, copper with low resistivity can be produced by electroplating, followed by an anti-oxidation layer, which can be made of MoNiTi. The MTD alloy is a MoCu alloy, which can improve the adhesion between film layers.

[0120] Of course, at least one of the interdigitated electrode group E and the island electrode group FGG can be set as a single metal layer; or it can be set as a stacked metal layer such as Mo / AlNd / Mo, Ti / Al / Ti.

[0121] In the embodiments of this application, when at least one of the interdigital electrode group E and the island electrode group FGG is made of aluminum (Al), its thickness range can be set to 800nm ​​to 1000nm; for example, 850nm, 880nm, 900nm, 950nm, 980nm.

[0122] When the material of at least one of the interdigital electrode group E and the island electrode group FGG is processed with copper (Cu), its thickness ranges from 800 nm to 3 μm; for example, 850 nm, 880 nm, 900 nm, 950 nm, 980 nm, 1050 nm, 1100 nm, 1150 nm, 1180 nm, 1 μm, 1.5 μm, 1.8 μm, 2.0 μm or 2.5 μm.

[0123] In addition, "overlap exists" in this specification means at least partial overlap, including partial overlap and complete overlap.

[0124] Wherein, the overlap between the orthographic projection of the third region on the substrate Gls and the orthographic projection of the island electrode group FGG on the substrate Gls includes: the orthographic projection of the third region on the substrate Gls partially overlaps with the orthographic projection of the island electrode group FGG on the substrate Gls; or, the orthographic projection of the third region on the substrate Gls completely overlaps with the orthographic projection of the island electrode group FGG on the substrate Gls.

[0125] In the RF switch provided in the embodiments of this application, an island-shaped electrode group FGG is configured such that the orthogonal projection of the third region on the substrate Gls overlaps with the orthogonal projection of the island-shaped electrode group FGG on the substrate Gls. Thus, when the RF switch is turned on, due to the difference in work function between the semiconductor layer Active and the island-shaped electrode FG (the work function of the third region of the semiconductor pattern ACT is greater than the work function of the island-shaped electrode FG, i.e.) Alternatively, the work function of the third region of the semiconductor pattern ACT is less than the work function of the island electrode FG, i.e. As shown in Figure 4A or Figure 4B, the third region of the semiconductor pattern ACT and the island electrode FG reach thermodynamic equilibrium, and the Fermi level (E) of the two materials is... F When aligned, a built-in electric field is formed at the interface, resulting in a certain surface potential on the surface of the third region, forming a depletion layer of a certain depth with its interior. A built-in electric field exists within the depletion layer. If φm > φs (the work function of the metal is greater than that of the semiconductor, i.e....), Electrons tend to flow from semiconductor S to metal M, as shown in Figure 4B. This leads to the accumulation of holes near the surface of semiconductor S (the white-filled circles in Figure 4B represent holes), thus creating a built-in electric field at the interface pointing towards the interior of semiconductor S. Conversely, if φm < φs (the work function of the metal is less than that of the semiconductor, i.e., ...), electrons will flow from semiconductor S to metal M. Electrons tend to flow from metal M to semiconductor S, as shown in Figure 4A. This results in the accumulation of electrons near the surface of semiconductor S (the black-filled circles in Figure 4A represent electrons), thereby creating a built-in electric field at the interface pointing towards the surface of semiconductor S.

[0126] Thus, when the RF switch is turned on, due to the difference in work function between the semiconductor layer Active and the island electrode FG, a surface potential exists on the surface of the third region of the semiconductor pattern ACT. There is a potential difference between the surface of the third region and the interior of the third region. At this time, holes and electrons in the third region are spatially separated under the influence of the built-in electric field, thereby reducing the probability of carrier recombination, increasing the lifetime of carriers in the third region, and thus reducing the on-state resistance of the RF switch and improving the performance of the RF switch.

[0127] In some embodiments of the radio frequency switch provided in this application, as shown in Figures 1 to 3 and Figures 12 to 14, the first electrode E1 and the second electrode E2 both extend along a first direction (e.g., the OX direction). On a plane parallel to the substrate Gls, the first electrode E1 and the second electrode E2 are alternately arranged along a second direction (e.g., the OY direction). The second direction (e.g., the OY direction) intersects with the first direction (e.g., the OX direction).

[0128] As shown in Figure 1, in the second direction (e.g., the OY direction), the size d1 of the island electrode group FGG is smaller than the distance d2 between the first electrode E1 and the second electrode E2.

[0129] For example, the first direction is the horizontal direction in Figure 1, and the second direction is the vertical direction in Figure 1.

[0130] The aforementioned "extending trend" does not limit the first electrode E1 and the second electrode E2 to be curves, broken lines, or straight lines; it only represents the wiring trend. For example, both the first electrode E1 and the second electrode E2 can be curves extending horizontally; or both can be curves extending horizontally. Of course, to improve space utilization in the RF switch, both the first electrode E1 and the second electrode E2 can be straight lines; or both can be broken lines; or both can be curves. The description of "extending trend" in the following text is the same as here and will not be repeated.

[0131] The aforementioned intersections may include perpendicularity or having a preset angle.

[0132] In practical applications, as shown in Figure 8, when the RF switch is on, the island electrode FG exhibits an edge field effect. The carrier density accumulated on the edge region of the island electrode FG is greater than that accumulated in the middle region. To avoid signal interference from the carriers on the island electrode FG to the first electrode E1 or the second electrode E2, the island electrode group FGG is positioned in a second direction (e.g., the OY direction). The size d1 of the island electrode group FGG is smaller than the distance d2 between the first electrode E1 and the second electrode E2. Thus, as shown in Figure 9, the distance between the island electrode FG and the first electrode E1 and the second electrode E2 is larger, thereby reducing the signal interference from the carriers on the island electrode FG to the first electrode E1 or the second electrode E2, and thus improving the electrical performance stability of the RF switch.

[0133] In some embodiments of the radio frequency switch provided in this application, the outer contour of the island electrode group FGG projected onto the substrate Gls is located within the outer contour of the third region projected onto the substrate Gls.

[0134] Among them, the outer contour of the orthogonal projection of the island electrode group FGG onto the substrate Gls is located within the outer contour of the orthogonal projection of the third region onto the substrate Gls, including but not limited to the following situations:

[0135] The first type is where the outer contour of the island electrode group FGG projected onto the substrate Gls overlaps with the outer contour of the third region projected onto the substrate Gls.

[0136] The second type is where the outer contour of the island electrode group FGG projected onto the substrate Gls partially overlaps with the outer contour of the third region projected onto the substrate Gls.

[0137] The third type is where the outer contour of the orthogonal projection of the island electrode group FGG onto the substrate Gls is located within the outer contour of the orthogonal projection of the third region onto the substrate Gls.

[0138] In some examples, the outer contour of the orthographic projection of the island electrode group FGG onto the substrate Gls, located within the outer contour of the orthographic projection of the third region onto the substrate Gls, can include at least four dimensional relationships between the island electrode group FGG and the third region: one is that, in the first direction (e.g., the OX direction), the size d3 of the island electrode group FGG is equal to the size d4 of the third region; another is, as shown in Figure 3, that, in the first direction (e.g., the OY direction), the size d3 of the island electrode group is smaller than the size d4 of the third region; a third is, as shown in Figures 5A and 5B, that, in the second direction (e.g., the OY direction), the size of the island electrode group is equal to the size of the third region; and a fourth is, as shown in Figure 3, that, in the second direction (e.g., the OY direction), the size d1 of the island electrode group FGG is smaller than the size d5 of the third region.

[0139] In Figures 1-3 and 12-14, for clarity, the figures are drawn with the example that the size d1 of the island electrode group FGG in the second direction is smaller than the size d5 of the third region. In practical applications, the size d1 of the island electrode group FGG in the second direction can be set to be equal to the size d5 of the third region.

[0140] When the outer contour of the orthogonal projection of the island electrode group FGG on the substrate Gls partially overlaps or overlaps with the outer contour of the orthogonal projection of the third region on the substrate Gls, the size of the island electrode group can be equal to the size of the third region in the second direction; when the outer contour of the orthogonal projection of the island electrode group FGG on the substrate Gls is located within the outer contour of the orthogonal projection of the third region on the substrate Gls, the size of the island electrode group can be smaller than the size of the third region in the second direction.

[0141] In some embodiments of the radio frequency switch provided in this application, as shown in FIG8, when the radio frequency switch is turned on, due to the edge field effect of the island electrode FG, the carrier density accumulated on the edge region of the island electrode FG is greater than the carrier density accumulated on the middle region. As shown in FIG5A and FIG5B, by setting the size d1 of the island electrode group FGG in the second direction (e.g., the OY direction) to be equal to the size d5 of the third region (e.g., the I region), the strength of the built-in electric field can be maximized, so that the carriers in the third region are spatially separated as much as possible, thereby reducing the probability of carrier recombination to a greater extent, increasing the carrier lifetime in the third region, and thus reducing the on-state resistance of the radio frequency switch and improving the performance of the radio frequency switch.

[0142] In some embodiments of the radio frequency switch provided in this application, as shown in FIG5A and FIG5B, the island electrode group FGG includes multiple island electrodes FG;

[0143] Multiple island-shaped electrodes FG are arranged at equal intervals along a first direction (e.g., the OX direction).

[0144] And / or,

[0145] Multiple island-shaped electrodes FG are arranged at equal intervals along a second direction (e.g., the OY direction).

[0146] In an exemplary embodiment, the above "and / or" includes three cases:

[0147] The first type, as shown in Figures (2) and (3) of Figure 5A, is an island electrode group FGG comprising multiple island electrodes FG, and the multiple island electrodes FG are arranged at equal intervals along a first direction (e.g., the OX direction).

[0148] The second type, as shown in Figure 5B (1), is an island electrode group FGG comprising multiple island electrodes FG, and the multiple island electrodes FG are arranged at equal intervals along the second direction (e.g., the OY direction).

[0149] The third type, as shown in Figures (2) and (3) of Figure 5B, is an island electrode group FGG comprising multiple island electrodes FG. Some of the island electrodes FG are arranged at equal intervals along the first direction (e.g., the OX direction), and some of the island electrodes FG are arranged at equal intervals along the second direction (e.g., the OY direction).

[0150] In the embodiments of this application, by arranging multiple island electrodes FG at equal intervals along a first direction (e.g., the OX direction) and / or arranging multiple island electrodes FG at equal intervals along a second direction (e.g., the OY direction), when a built-in electric field is formed between the island electrodes FG and the semiconductor pattern ACT, the uniformity of the electric field intensity of each built-in electric field formed by the same island electrode FG can be improved as much as possible. This makes the carrier distribution in each built-in electric field uniform, avoids recombination quenching caused by excessively high carrier concentration in local areas, improves the carrier lifetime in the third region, and thus reduces the on-state resistance of the RF switch and improves the performance of the RF switch.

[0151] In an exemplary embodiment, as shown in FIG31, the island electrode group FGG can be configured in the first direction (e.g., the OX direction) with the size d3 equal to the size d4 of the third region. In this case, the outer contour of the island electrode group FGG may overlap with the edge of the third region (I region), that is, the outer contour of the island electrode group FGG extending along the second direction (e.g., the OY direction) is aligned with the edge of the third region (I region) extending along the second direction (e.g., the OY direction).

[0152] In the embodiments of this application, when the size d3 of the island electrode group FGG is equal to the size d4 of the third region in the first direction (e.g., the OX direction), the size of the island electrode group FGG can be increased as much as possible, thereby increasing the area of ​​the built-in electric field. This is beneficial for the built-in electric field to control the charge carriers in the I region, thereby increasing the lifetime of the charge carriers and reducing the on-state resistance of the RF switch.

[0153] In some embodiments of the radio frequency switch provided in this application, when multiple island electrodes are arranged at equal intervals along a first direction (e.g., the OX direction), as shown in Figure 5A (2) and Figure 6 (2), in the first direction (e.g., the OX direction), the distance d7 between two adjacent island electrodes FG in the same island electrode group FGG is approximately equal to the minimum distance d6 between the outer contour of the island electrode group FGG and the edge of the third region (I region).

[0154] In the embodiments of this application, when multiple island electrodes are arranged at equal intervals along a first direction (e.g., the OX direction), by setting the distance d7 between two adjacent island electrodes FG in the same island electrode group FGG to be approximately equal to the minimum distance d6 between the outer contour of the island electrode group FGG and the edge of the third region (I region), on the one hand, it is beneficial to control the island electrodes FG to be placed in the middle region of the semiconductor pattern ACT as much as possible, covering the third region (I region) as much as possible, and forming a larger built-in electric field between the I region and the island electrodes FG; on the other hand, it can improve the uniformity of the electric field intensity of each built-in electric field formed by the same island electrode FG as much as possible, thereby making the carrier distribution in each built-in electric field uniform, avoiding recombination quenching caused by excessively high carrier concentration in local areas, improving the carrier lifetime in the third region, thereby reducing the on-state resistance of the RF switch and improving the performance of the RF switch.

[0155] In some embodiments of the radio frequency switch provided in this application, when multiple island electrodes are arranged at equal intervals along a second direction (e.g., the OY direction), as shown in Figure 7(1), the distance d8 between two adjacent island electrodes FG in the same island electrode group FGG is approximately equal to the minimum distance d9 between the outer contour of the island electrode group FGG and the edge of the third region (I region) in the second direction (e.g., the OY direction).

[0156] In the embodiments of this application, when multiple island electrodes are arranged at equal intervals along a second direction (e.g., the OY direction), by setting them along the second direction (e.g., the OY direction), the distance d8 between two adjacent island electrodes FG in the same island electrode group FGG is approximately equal to the minimum distance d9 between the outer contour of the island electrode group FGG and the edge of the third region (I region). On the one hand, this is beneficial to control the island electrodes FG to be set as close as possible to the middle region of the semiconductor pattern ACT, to cover the third region (I region) as much as possible, and to form a larger built-in electric field between the I region and the island electrodes FG. On the other hand, it avoids the island electrode group FGG from being set in a direction biased towards the first electrode E1 or the second electrode E2, thus avoiding the increase of additional parasitic capacitance.

[0157] In some embodiments of the radio frequency switch provided in this application, taking the markings in Figure 6(1) as an example, in the second direction (e.g., the OY direction), the size d1 of the island electrode group FGG is greater than the size d5 of the third region (I region).

[0158] In some embodiments of the radio frequency switch provided in this application, the orthographic projection of the island electrode group FGG on the substrate Gls overlaps with the orthographic projection of the first region on the substrate Gls, and / or, the orthographic projection of the island electrode group FGG on the substrate Gls overlaps with the orthographic projection of the second region on the substrate Gls.

[0159] The “and / or” mentioned above includes the following situations:

[0160] In the first case, the orthogonal projection of the island electrode group FGG on the substrate Gls overlaps with the orthogonal projection of the first region (e.g., the P region) on the substrate Gls.

[0161] The second type is where the orthogonal projection of the island electrode group FGG on the substrate Gls overlaps with the orthogonal projection of the second region (e.g., the N region) on the substrate Gls.

[0162] The third type, as shown in Figures 6 and 7, involves the following: in a local region of the RF switch, the orthogonal projection of the island electrode group FGG onto the substrate Gls overlaps with the orthogonal projection of the first region (e.g., the P region) onto the substrate Gls; and in a local region of the RF switch, the orthogonal projection of the island electrode group FGG onto the substrate Gls overlaps with the orthogonal projection of the second region (e.g., the N region) onto the substrate Gls.

[0163] In some embodiments of the radio frequency switch provided in this application, as shown in FIG32, the interdigitated electrode group E (including the first electrode E1 and the second electrode E2) and the island electrode group FGG / FG are arranged in the same layer.

[0164] In the embodiments of this application, "same layer" refers to the relationship between multiple film layers formed by the same material after undergoing the same step (e.g., a patterning process).

[0165] The term "same layer" here does not always refer to multiple film layers having the same thickness or multiple film layers having the same height in a cross-sectional view.

[0166] In the embodiments of this application, in order to simplify the process and reduce the manufacturing difficulty, the interdigitated electrode group E and the island electrode group FGG / FG can be set to have the same thickness.

[0167] In some embodiments of the radio frequency switch provided in this application, as shown in Figures 1 and 9, the interdigitated electrode group E and the island electrode group FGG are disposed in different layers.

[0168] Multiple island-shaped electrode groups FGG are disposed in the first conductive layer (e.g., the Gate layer), which is located on the side of the semiconductor layer Active away from the substrate Gls.

[0169] Multiple interdigitated electrode groups E are disposed in a second conductive layer (e.g., SD layer), which is located on the side of the first conductive layer (e.g., Gate layer) away from the substrate Gls.

[0170] Figure 9 is a schematic diagram of the cross-sectional structure along the M1M2 direction of Question 1.

[0171] In an exemplary embodiment, the material of the first conductive layer Gate can be a metal, such as one or more combinations of copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo).

[0172] Of course, the first conductive layer, Gate, can also be a single metal layer; or it can be a stacked metal layer such as Mo / AlNd / Mo, Ti / Al / Ti.

[0173] For example, the material of the second conductive layer SD can be a metal, such as one or more combinations of copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo).

[0174] In some embodiments of the radio frequency switch provided in this application, as shown in FIG10, the first conductive layer Gate further includes a first contact electrode J1 and a second contact electrode J2. The first electrode E1 is electrically connected to the first region (P region) through the first contact electrode J1, and the second electrode E2 is electrically connected to the second region (N region) through the second contact electrode J2.

[0175] In some embodiments of the radio frequency switch provided in this application, as shown in FIG10, an insulating layer GI is further disposed between the first conductive layer Gate and the semiconductor layer Active. The insulating layer GI is provided with a plurality of first vias Via1 and a plurality of second vias Via2. The orthographic projection of the first vias Via1 onto the semiconductor layer Active falls into the first region (P region), and the orthographic projection of the second vias Via2 onto the semiconductor layer Active falls into the second region (N region). The first electrode E1 is electrically connected to the first region (P region) through the first vias Via1, and the second electrode E2 is electrically connected to the second region (N region) through the second vias Via2.

[0176] Specifically, in the direction parallel to the substrate Gls, the minimum distance h1 between the first via Via1 and the third region (I region) is less than or equal to the minimum distance h2 between the geometric center of the first region (P region) and the third region (I region); the minimum distance h3 between the second via Via2 and the third region (I region) is less than or equal to the minimum distance h4 between the geometric center of the second region (N region) and the third region (I region).

[0177] In an exemplary embodiment, the minimum distance h1 between the first through-hole Via1 and the third region (I region) can be approximately equal to the minimum distance h3 between the second through-hole Via2 and the third region (I region).

[0178] In the embodiments of this application, by setting the minimum distance h1 between the first via Via1 and the third region (I region) in a direction parallel to the substrate Gls, the minimum distance h1 is less than or equal to the minimum distance h2 between the geometric center of the first region (P region) and the third region (I region); the minimum distance h3 between the second via Via2 and the third region (I region) is less than or equal to the minimum distance h4 between the geometric center of the second region (N region) and the third region (I region). In this way, the first via Via1 and the second via Via2 are set as close as possible to the third region (I region), which can reduce contact resistance and possible parasitic capacitance, thereby improving the electrical characteristics of the RF switch.

[0179] Figure 11 shows the voltage-current characteristics (labeled Without FG) of a radio frequency switch in the related art and the voltage-current characteristics (labeled With FG) of a radio frequency switch provided in the embodiment of this application. As can be seen from the curves in the figure, under the same voltage change conditions, the current through the radio frequency switch is significantly increased after setting the island electrode FG, indicating that the effect of reducing the on-state resistance after setting the island electrode is more significant.

[0180] In some embodiments of the radio frequency switch provided in this application, as shown in Figures 23 and 25, multiple semiconductor patterns ACT are connected together along a second direction (e.g., the OY direction), with the first region being the P region, the second region being the N region, and the third region being the I region;

[0181] Multiple semiconductor patterns are arranged in the order of P-region, I-region, N-region, I-region, P-region, I-region, N-region.

[0182] Figure 24 provides a comparative structural diagram of multiple semiconductor patterns ACT before (Figure 24(1)) and after (Figure 24(2)) they are connected together along a second direction (e.g., the OY direction). It can be seen that the individual semiconductor patterns ACT are connected together through a third region (I region). In Figure 24(1) and Figure 24(2), arrows are used to indicate the current flow direction in the semiconductor patterns ACT when the RF switch is turned on. It should be noted that in Figure 24(2), the first semiconductor pattern ① shares an N region with the second semiconductor pattern ②, the second semiconductor pattern ② shares a P region with the third semiconductor pattern ③, the third semiconductor pattern ③ shares an N region with the fourth semiconductor pattern ④, and the fourth semiconductor pattern ④ shares a P region with the fifth semiconductor pattern ⑤. Thus, combined with Figure 23 or Figure 25, the number of interdigitated electrode groups E (including the first electrode E1 and the second electrode E2) is significantly reduced, decreasing the design space and volume of the RF switch.

[0183] It should be noted that the semiconductor pattern ACT in this specification includes a first region (P region), a second region (N region), and a third region (I region). For clarity, ACT is not marked in all the drawings, but is only simplified and marked with P, I, and N.

[0184] In some embodiments of the radio frequency switch provided in this application, as shown in Figures 26 to 28, the interdigital electrode group E includes a plurality of first branch groups (including E1F and E2F) arranged along a first direction (e.g., the OX direction), and the first branch groups (including E1F and E2F) are located in the region between the first electrode E1 and the second electrode E2.

[0185] The first branch group (including E1F and E2F) includes a first branch E1F and a second branch E2F extending along a second direction (e.g., the OY direction). The first branch E1F is electrically connected to the first electrode E1, and the second branch E2F is electrically connected to the second electrode E2. The orthographic projection of the first branch E1F along the first direction onto the second branch E2F overlaps with the second branch E2F.

[0186] Among them, in at least a portion of the semiconductor patterns ACT, the orthographic projection of one of the semiconductor patterns ACT onto the substrate Gls overlaps with the first branch E1F and the second branch E2F within the same first branch group.

[0187] Since the first branch E1F is electrically connected to the first electrode E1, and the first electrode E1 is electrically connected to the first region (P region), it can be known that the first branch E1F is electrically connected to the first region (P region). In practical applications, when the first branch group is set, the first branch E1F is directly electrically connected to the first region (P region), and the first branch E1F is then electrically connected to the first electrode E1.

[0188] Since the second branch E2F is electrically connected to the second electrode E2, and the second electrode E2 is electrically connected to the second region (N region), it can be known that the second branch E2F is electrically connected to the second region (N region). In practical applications, when the first branch group is set, the second branch E2F is directly electrically connected to the second region (N region), and the second branch E2F is then electrically connected to the second electrode E2.

[0189] In an exemplary embodiment, in at least a portion of the semiconductor pattern ACT, the orthographic projection of one of the semiconductor pattern ACTs onto the substrate Gls overlaps with the first branch E1F and the second branch E2F within the same first branch group, including the following cases:

[0190] The first type, as shown in Figure 28, involves a portion of the semiconductor pattern ACT. The orthographic projection of the semiconductor pattern ACT onto the substrate Gls overlaps with the first branch E1F and the second branch E2F within the same first branch group. It can be understood that in Figure 28, the number of semiconductor patterns ACT is greater than the number of first branch groups. In this portion of the semiconductor pattern ACT, the orthographic projection of any semiconductor pattern ACT onto the substrate Gls overlaps with the first branch E1F and the second branch E2F within a first branch group. Furthermore, the orthographic projection of some semiconductor patterns ACT onto the substrate Gls also overlaps with other conductive structures.

[0191] The second type, as shown in Figure 26, has a number of semiconductor patterns ACT equal to the number of the first branch group. For each semiconductor pattern ACT, there is an overlap between the orthogonal projection of the semiconductor pattern ACT on the substrate Gls and the first branch E1F and the second branch E2F in the same first branch group.

[0192] The aforementioned "overlap" includes partial overlap and complete overlap. For example, the orthographic projection of the semiconductor pattern ACT on the substrate Gls partially overlaps with the orthographic projections of the first branch E1F and the second branch E2F in the same first branch group on the substrate Gls; or, for another example, the orthographic projections of the first branch E1F and the second branch E2F in the same first branch group on the substrate Gls are located within the orthographic projection of the semiconductor pattern ACT on the substrate Gls.

[0193] In the embodiments of this application, by setting a first branch group, and the first branch group (including E1F and E2F) including a first branch E1F and a second branch E2F extending along a second direction (e.g., the OY direction), the first branch E1F is electrically connected to the first electrode E1, and the second branch E2F is electrically connected to the second electrode E2; and by setting at least a portion of the semiconductor pattern ACT, the orthogonal projection of one of the semiconductor pattern ACTs on the substrate Gls overlaps with the first branch E1F and the second branch E2F in the same first branch group; in this way, compared with setting a large area of ​​semiconductor pattern ACTs directly in the area between the first electrode E1 and the second electrode E2, while increasing the number of semiconductor pattern ACTs (increasing the number of PIN switches), the area of ​​each semiconductor pattern ACT is greatly reduced, which is beneficial to the heat dissipation of the RF switch and extends the service life of the RF switch.

[0194] Figures 27(1) and (2) provide top views of the positional relationship between the first branch E1F and the second branch E2F in the two first branch groups and the semiconductor pattern ACT, as well as the island electrode FG.

[0195] In some embodiments of the radio frequency switch provided in this application, as shown in FIG28, the interdigitated electrode group E includes a plurality of second branch groups arranged along a first direction (e.g., the OX direction), and a row of first branch groups (including E1F and E2F) and a row of second branch groups (including E3F and E4F) are alternately arranged in the region between the first electrode E1 and the second electrode E2 along a second direction (e.g., the OY direction).

[0196] The second branch group includes a third branch E3F and a fourth branch E4F extending along a second direction (e.g., the OY direction). The third branch E3F is electrically connected to the first electrode E1, and the fourth branch E4F is electrically connected to the second electrode E2. The orthographic projection of the third branch E3F along the first direction (e.g., the OX direction) onto the fourth branch E4F overlaps with the fourth branch E4F.

[0197] As shown in Figure 28, in a partial semiconductor pattern ACT, the orthographic projection of one of the semiconductor patterns ACT on the substrate Gls overlaps with the first branch E1F and the second branch E2F in the same first branch group, respectively. In a partial semiconductor pattern ACT, the orthographic projection of one of the semiconductor patterns ACT on the substrate Gls overlaps with the third branch E3F and the fourth branch E4F in the same second branch group, respectively.

[0198] Since the third branch E3F is electrically connected to the first electrode E1, and the first electrode E1 is electrically connected to the first region (P region), it can be known that the third branch E3F is electrically connected to the first region (P region). In practical applications, when a second branch group is set, the third branch E3F is directly electrically connected to the first region (P region), and the third branch E3F is then electrically connected to the first electrode E1.

[0199] Since the fourth branch E4F is electrically connected to the second electrode E2, and the second electrode E2 is electrically connected to the second region (N region), it can be known that the fourth branch E4F is electrically connected to the second region (N region). In practical applications, when the second branch group is set, the fourth branch E4F is directly electrically connected to the second region (N region), and the fourth branch E4F is then electrically connected to the second electrode E2.

[0200] In an embodiment of this application, as shown in FIG28, a first branch group (including E1F and E2F) and a second branch group (including E3F and E4F) are alternately arranged in the area between the first electrode E1 and the second electrode E2 along a second direction (e.g., the OY direction). In this way, the number of interdigitated electrode groups E (including the first electrode E1 and the second electrode E2) is greatly reduced, thereby reducing the design space and volume of the RF switch.

[0201] Furthermore, compared to directly setting a large area of ​​semiconductor pattern ACT in the region between the first electrode E1 and the second electrode E2, in setting a partial semiconductor pattern ACT, the orthographic projection of one of the semiconductor pattern ACTs on the substrate Gls overlaps with the first branch E1F and the second branch E2F in the same first branch group, respectively. In another partial semiconductor pattern ACT, the orthographic projection of one of the semiconductor pattern ACTs on the substrate Gls overlaps with the third branch E3F and the fourth branch E4F in the same second branch group, respectively. In this way, while increasing the number of semiconductor pattern ACTs (increasing the number of PIN switches), the area of ​​each semiconductor pattern ACT is greatly reduced, and a certain gap is inserted between adjacent semiconductor pattern ACT layers, which is beneficial for heat dissipation of the device, thereby benefiting the heat dissipation of the RF switch and extending the service life of the RF switch.

[0202] In some embodiments of the radio frequency switch provided in this application, as shown in Figures 28 and 29, the first region is the P region, the second region is the N region, and the third region is the I region;

[0203] In the semiconductor pattern ACT that overlaps with the same first branch group (including the first branch E1F and the second branch E2F), the N region, I region and P region are arranged in sequence along the first direction (e.g., the OX direction).

[0204] As shown in (2) of Figures 28 and 29, in the semiconductor pattern ACT that overlaps with the same second branch group, the P region, I region and N region are arranged sequentially along the first direction.

[0205] Specifically, when the RF switch is turned on, the current flow direction in the semiconductor pattern ACT that overlaps with the same first branch group (including the first branch E1F and the second branch E2F) is opposite to the current flow direction in the semiconductor pattern ACT that overlaps with the same second branch group.

[0206] In Figure 29(1), the arrangement direction of the N, I and P regions of the semiconductor pattern ACT is opposite to that of the P, I and N regions of the semiconductor pattern ACT in Figure 29(2).

[0207] In addition, Figure 29(3) shows a hollow area set on the island structure FG based on Figure 29(1), and Figure 29(4) shows a hollow area set on the island structure FG based on Figure 29(3).

[0208] In the embodiments of this application, a radio frequency switch is provided, as shown in FIG28, by setting a row of first branch groups (including E1F and E2F) and a row of second branch groups (including E3F and E4F) alternately arranged in the area between the first electrode E1 and the second electrode E2 along a second direction (e.g., the OY direction); through this total-partition design, the area of ​​a single semiconductor pattern ACT is reduced, and the gap between adjacent ACTs is increased, which is beneficial to the heat dissipation of the device, thereby improving the power capacity of the switch.

[0209] In some embodiments of the radio frequency switch provided in this application, as shown in FIG28, the number of island electrode groups FGG is equal to the sum of the number of the first branch group (including E1F and E2F) and the second branch group (including E3F and E4F).

[0210] In an exemplary embodiment, the number of island electrode groups FGG is equal to the number of PIN switches.

[0211] In some embodiments of the radio frequency switch provided in this application, as shown in Figures 26 and 28, the linewidths of the first branch E1F, the second branch E2F, the third branch E3F, and the fourth branch E4F along a first direction (e.g., the OX direction) are approximately equal. When the linewidth of the first branch E1F is less than a preset value, the orthographic projection of the island electrode group FGG on the substrate Gls overlaps with the orthographic projection of at least one of the first branch group and the second branch group on the substrate Gls.

[0212] The aforementioned "preset value" can be the line width of the first electrode E1, the line width of the second electrode E2, or it can be half the line width of the first electrode E1, half the line width of the second electrode E2; or it can be one-third the line width of the first electrode E1, one-third the line width of the second electrode E2.

[0213] The overlap between the orthographic projection of the island electrode group FGG on the substrate Gls and the orthographic projection of at least one of the first branch group and the second branch group on the substrate Gls refers to the following: when the first branch group and the second branch group are disposed on different layers from the island electrode group FGG, the orthographic projection of the island electrode group FGG on the substrate Gls overlaps with the orthographic projection of the first branch group on the substrate Gls; or, the orthographic projection of the island electrode group FGG on the substrate Gls overlaps with the orthographic projection of the second branch group on the substrate Gls; or, the orthographic projection of the island electrode group FGG on the substrate Gls overlaps with the orthographic projections of the first branch group and the second branch group on the substrate Gls, respectively.

[0214] Since the linewidths of the first branch E1F, the second branch E2F, the third branch E3F, and the fourth branch E4F are approximately equal along the first direction (e.g., the OX direction), and the linewidth of the first branch E1F is less than a preset value, the linewidths of the first branch E1F, the second branch E2F, the third branch E3F, and the fourth branch E4F in the first and second branch groups are relatively small. Even if they overlap with the island electrode FG, the resulting parasitic capacitance is small, and its impact on the electrical characteristics of the RF switch can be ignored. This configuration significantly reduces the difficulty of the fabrication process and lowers costs.

[0215] In some embodiments of the radio frequency switch provided in this application, as shown in FIG21, all island electrodes FG in the same radio frequency switch are electrically connected together and used to transmit voltage control signals Gate. Specifically, all island electrodes FG in the same radio frequency switch are connected as a single unit to form a voltage control signal line (or gate control signal line Gate). In FIG21, the island electrodes FG connected as a single unit are directly labeled as the gate control signal line Gate.

[0216] Figure 22 shows the curves of the current of the RF switch as a function of the voltage difference between the first and second electrodes when different voltage signals are applied to the voltage control signal line (or gate control signal line). In the figure, the horizontal axis represents the voltage difference between the first and second electrodes, and the vertical axis represents the current. As indicated by the arrows, it can be seen that as the voltage applied to the voltage control signal line (or gate control signal line) increases, the current through the RF switch increases significantly, indicating that the on-state resistance of the RF switch is significantly reduced, thus improving the electrical characteristics of the RF switch.

[0217] In some embodiments of the radio frequency switch provided in this application, as shown in Figures 12-14, 17-20, 25, 15, and 16, the island electrode FG includes a hollow area K, and the planar pattern of the island electrode FG projected onto the substrate Gls is annular. Figure 15 is a schematic cross-sectional view of Figure 12 along the M3M4 direction.

[0218] In an exemplary embodiment, the inner and outer contours of the aforementioned "ring" are similar figures. Two figures with corresponding angles equal and corresponding sides proportional are called similar figures.

[0219] In an exemplary embodiment, the inner and outer contours of the aforementioned "ring" may be different.

[0220] For example, the inner contour of the aforementioned "ring" is a rounded polygon, while the outer contour is a polygon.

[0221] At least one of the inner and outer contour graphics of the aforementioned "ring" is an arc shape, or a graphic formed by splicing a polygon and an arc shape.

[0222] Among them, polygons include quadrilaterals, pentagons, and hexagons, and arcs include circles, semicircles, ellipses, sectors, semicircles, and semi-ellipses.

[0223] In some embodiments of the radio frequency switch provided in this application, the outer contour of the ring is the same as the shape of the outer contour of the planar pattern of the third region (region I).

[0224] In some embodiments of the radio frequency switch provided in this application, at least one of the planar shape of the outer annular contour and the planar shape of the inner annular contour is a concave polygon. As shown in FIG30, twelve different types of concave polygons are provided; wherein, the concave polygons have more vertex angles.

[0225] The aforementioned concave polygon refers to a polygon in which, if one of its sides is extended infinitely in both directions to form a straight line, then the other sides are not all on the same side of this straight line.

[0226] Concave polygons have the following properties:

[0227] 1. It has one interior angle greater than 180°;

[0228] 2. A polygon has a line segment between two vertices that lies outside the polygon;

[0229] 3. There are two vertices within a polygon whose connecting line is not entirely inside the polygon. "Not entirely inside the polygon" means that the connecting line is partially inside the polygon and partially inside the polygon.

[0230] For example, a concave polygon may include the twelve shapes provided in Figures 30 (1) to (12), such as a star (including a four-pointed star, a five-pointed star, etc.), a cross, etc.

[0231] Based on the charge density distribution simulation diagram in Figure 8, charge carriers are more likely to be distributed in the edge corner region of the island electrode FG. By setting at least one of the planar shapes of the outer and inner ring contours to be concave polygons, the island electrode FG has more vertices, which can greatly increase the strength of the built-in electric field, thereby facilitating carrier spatial separation, extending carrier lifetime, and reducing the on-state resistance of the RF switch.

[0232] In some embodiments of the radio frequency switch provided in this application, the width of the ring is greater than 0 and less than or equal to 1 μm.

[0233] For example, the width of the annular island electrode FG can be 0.3 μm, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm or 0.9 μm.

[0234] In some embodiments of the radio frequency switch provided in this application, as shown in FIG33, the orthogonal projections of the first electrode E1, the second electrode E2, and the island electrode FG on the substrate Gls are all spiral-shaped; the orthogonal projection of the island electrode FG on the substrate Gls is located between the orthogonal projections of the first electrode E1 and the second electrode E2 on the substrate Gls; the orthogonal projection of the semiconductor pattern ACT on the substrate Gls overlaps with the orthogonal projection of the island electrode FG on the substrate Gls.

[0235] As shown in FIG24, in some embodiments of the radio frequency switch provided in this application, the radio frequency switch further includes a first conductive structure DG1 and a second conductive structure DG2. The first conductive structure DG1 is disposed in the same layer as the island electrode FG, and the second conductive structure DG2 is disposed in the same layer as the second electrode E2.

[0236] The orthographic projections of the first conductive structure DG1 and the second conductive structure DG2 on the substrate Gls are both spiral-shaped, and a passivation layer and / or an insulating layer are disposed between the first conductive structure DG1 and the second conductive structure DG2.

[0237] The radio frequency switch includes a diode, with one of the first electrode E1 and the second electrode E2 serving as the positive terminal of the diode and the other serving as the negative terminal.

[0238] The radio frequency switch also includes an inductor DG, with a first conductive structure DG1 and a second conductive structure DG2 electrically connected to form a coil of the inductor DG.

[0239] Both the insulating layer GI and the passivation layer Pvx are made of insulating materials.

[0240] In some embodiments of the radio frequency switch provided in this application, as shown in Figures 1-3, 12-14, 21, 23, and 25, the orthogonal projection of the first electrode E1 on the substrate Gls and the orthogonal projection of the second electrode E2 on the substrate do not overlap with the orthogonal projection of the third region (I region) on the substrate Gls.

[0241] As shown in Figures 26 to 29, when the interdigitated electrode group E includes a first branch group and a second branch group, the orthographic projections of the first branch group and the second branch group on the substrate Gls do not overlap with the orthographic projections of the third region (region I) on the substrate Gls.

[0242] In the embodiments of this application, by setting the orthographic projections of the first electrode E1 on the substrate Gls and the second electrode E2 on the substrate to not overlap with the orthographic projections of the third region (I region) on the substrate Gls, and in the case where the interdigitated electrode group E includes a first branch group and a second branch group, the orthographic projections of the first branch group on the substrate Gls and the second branch group on the substrate Gls to not overlap with the orthographic projections of the third region (I region) on the substrate Gls, the parasitic capacitance that may exist in the RF switch can be greatly reduced, and the interference of parasitic capacitance on the RF switch electrical signal can be avoided, thereby improving the stability of the electrical characteristics of the RF switch.

[0243] In some embodiments of the radio frequency switch provided in this application, as shown in Figures 1-3, 12-14, 21, 23, 25, and 26-29, the radio frequency switch includes a first connecting line L1 and a second connecting line L2 extending along a second direction (e.g., the OY direction). The first connecting line L1 is used to electrically connect a plurality of first electrodes E1 together, and the second connecting line L2 is used to connect a plurality of second electrodes E2 together.

[0244] In an exemplary embodiment, the first electrode E1 is the anode and the second electrode E2 is the cathode.

[0245] In some embodiments of the radio frequency switch provided in this application, as shown in Figures 9, 10, 15 and 16, the radio frequency switch further includes a buffer layer BF, an insulating layer GI and a passivation layer Pvx;

[0246] The buffer layer BF is located between the substrate GLS and the semiconductor layer Active, the insulating layer GI is located on the side of the semiconductor layer Active away from the substrate gLS, and the passivation layer Pvx is located between the first conductive layer Gate and the second conductive layer SD.

[0247] For example, the material of the buffer layer Bf can be an inorganic material.

[0248] Alternatively, a gate insulating layer (GI) can be deposited using PECVD (Plasma Enhanced Chemical Vapor Deposition) technology. The material of the gate insulating layer GI can be silicon nitride, silicon oxynitride, or other dielectric materials.

[0249] For example, the material of the passivation layer Pvx can be silicon nitrogen (SiN), silicon oxygen (SiO), or hydrogen-free SiNx:F.

[0250] Embodiments of this application provide a radio frequency chip, which includes a radio frequency switch as described in any of the preceding descriptions.

[0251] For example, the radio frequency chip may also include a transceiver, a filter, a power amplifier, and an antenna tuning switch.

[0252] In the RF chip provided in the embodiments of this application, by setting an island-shaped electrode group FGG, and ensuring that the orthographic projection of the third region on the substrate Gls overlaps with the orthographic projection of the island-shaped electrode group FGG on the substrate Gls, when the RF switch is turned on, due to the difference in work function between the semiconductor layer Active and the island-shaped electrode FG (the work function of the third region of the semiconductor pattern ACT is greater than the work function of the island-shaped electrode FG, i.e.) Alternatively, the work function of the third region of the semiconductor pattern ACT is less than the work function of the island electrode FG, i.e. As shown in Figure 4A or Figure 4B, the third region of the semiconductor pattern ACT and the island electrode FG reach thermodynamic equilibrium, and the Fermi level (E) of the two materials is... F When aligned, a built-in electric field is formed at the interface, resulting in a certain surface potential on the surface of the third region, forming a depletion layer of a certain depth with its interior. A built-in electric field exists within the depletion layer. If φm > φs (the work function of the metal is greater than that of the semiconductor, i.e....), Electrons tend to flow from semiconductor S to metal M, as shown in Figure 4B. This leads to the accumulation of holes near the surface of semiconductor S (the white-filled circles in Figure 4B represent holes), thus creating a built-in electric field at the interface pointing towards the interior of semiconductor S. Conversely, if φm < φs (the work function of the metal is less than that of the semiconductor, i.e., ...), electrons will flow from semiconductor S to metal M. Electrons tend to flow from metal M to semiconductor S, as shown in Figure 4A. This results in the accumulation of electrons near the surface of semiconductor S (the black-filled circles in Figure 4A represent electrons), thereby creating a built-in electric field at the interface pointing towards the surface of semiconductor S.

[0253] Thus, when the RF switch is turned on, due to the difference in work function between the semiconductor layer Active and the island electrode FG, a surface potential exists on the surface of the third region of the semiconductor pattern ACT. There is a potential difference between the surface of the third region and the interior of the third region. At this time, holes and electrons in the third region are spatially separated under the influence of the built-in electric field, thereby reducing the probability of carrier recombination, increasing the lifetime of carriers in the third region, and thus reducing the on-state resistance of the RF switch and improving the performance of the RF switch.

[0254] In the embodiments of this application, the terms "first", "second", "third", "fourth" are used to distinguish the same or similar items with essentially the same function and effect, only for the purpose of clearly describing the technical solution of the embodiments of this application, and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated.

[0255] In the embodiments of this application, the terms "upper" and "lower" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0256] In the description of this specification, the terms "one embodiment," "some embodiments," "exemplary embodiment," "example," "specific example," or "some examples," etc., are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this application. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics mentioned may be included in any suitable manner in any one or more embodiments or examples.

[0257] In the embodiments of this application, "multiple" means two or more, and "at least one" means one or more, unless otherwise explicitly defined.

[0258] As used in this application, "parallel," "perpendicular," "equal," and "flush" encompass the described situation and situations that are similar to the described situation, within an acceptable deviation range, which is determined by those skilled in the art taking into account the measurement under discussion and the error associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, where the acceptable deviation range for approximate parallelism can be, for example, within 10° or 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, where the acceptable deviation range for approximate perpendicularity can also be, for example, within 10° or 5°. "Equal" includes absolute equality and approximate equality, where the acceptable deviation range for approximate equality can be, for example, the difference between the two equals being less than or equal to 5% of either one. "Flush" includes absolute flush and approximate flush, where the acceptable deviation range for approximate flush can be, for example, the distance between the flushes being less than or equal to 5% of either one's dimension.

[0259] Unless the context otherwise requires, throughout the specification and claims, the term "comprising" is interpreted as open and encompassing, that is, "including, but not limited to".

[0260] The polygons used in this specification are not strictly defined; they can be approximate triangles, parallelograms, trapezoids, pentagons, or hexagons, and may have minor deformations due to tolerances.

[0261] In this specification, "electrical connection" and "coupling" include situations where components are connected together by elements that have some electrical function. There are no particular limitations on what constitutes an "electrical function," as long as it allows for the transmission and reception of electrical signals between the connected components. Examples of "electrical functions" include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other components with various functions.

[0262] In this specification, the term "same-layer arrangement" refers to a structure formed by patterning two (or more) structures through the same patterning process, and their materials may be the same or different. For example, the precursors forming multiple structures in a same-layer arrangement may be made of the same material, while the final materials may be the same or different.

[0263] It should be understood that when a layer or element is referred to as being on another layer or substrate, it can mean that the layer or element is directly on the other layer or substrate, or that there is an intermediate layer between the layer or element and the other layer or substrate.

[0264] "At least one of A, B and C" has the same meaning as "at least one of A, B or C", both including the following combinations of A, B and C: only A, only B, only C, combinations of A and B, combinations of A and C, combinations of B and C, and combinations of A, B and C.

[0265] "A and / or B" includes the following three combinations: A only, B only, and a combination of A and B.

[0266] Finally, it should be noted that the above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A radio frequency switch, wherein, The application relates to a semiconductor structure, comprising: a substrate; a semiconductor layer located on one side of the substrate, comprising at least one semiconductor pattern; the semiconductor pattern comprises a first region, a second region, and a third region located between the first region and the second region; at least one island electrode group located on the side of the semiconductor layer away from the substrate, the island electrode group comprising at least one island electrode; at least one interdigital electrode group comprising a first electrode and a second electrode which are not connected to each other; the first electrode is electrically connected to the first region, and the second electrode is electrically connected to the second region; wherein the work function of the semiconductor pattern and the island electrode group is different, and the orthographic projection of the third region on the substrate and the orthographic projection of the island electrode group on the substrate overlap.

2. The radio frequency switch of claim 1, wherein, The first electrode and the second electrode both extend along a first direction, and the first electrode and the second electrode are alternately arranged along a second direction in a plane parallel to the substrate; the second direction intersects the first direction; wherein, in the second direction, the size of the island electrode group is smaller than the distance between the first electrode and the second electrode.

3. The radio frequency switch of claim 2, wherein, The outer contour of the orthographic projection of the island electrode group on the substrate is within the outer contour of the orthographic projection of the third region on the substrate.

4. The radio frequency switch of claim 3, wherein, In the second direction, the size of the island electrode group is equal to the size of the third region.

5. The radio frequency switch of claim 2, wherein, The island electrode group comprises a plurality of island electrodes; a plurality of island electrodes are equally spaced along the first direction, and / or, a plurality of island electrodes are equally spaced along the second direction.

6. The radio frequency switch of claim 5, wherein, In the case where a plurality of island electrodes are equally spaced along the first direction, in the first direction, the distance between two adjacent island electrodes in the same island electrode group is approximately equal to the minimum distance between the outer contour of the island electrode group and the edge of the third region.

7. The radio frequency switch of claim 5, wherein, In the case where a plurality of island electrodes are equally spaced along the second direction, in the second direction, the distance between two adjacent island electrodes in the same island electrode group is approximately equal to the minimum distance between the outer contour of the island electrode group and the edge of the third region.

8. The radio frequency switch of claim 2, wherein, In the second direction, the size of the island electrode group is greater than the size of the third region.

9. The radio frequency switch of claim 8, wherein, The orthographic projection of the island electrode group on the substrate and the orthographic projection of the first region on the substrate overlap, and / or, the orthographic projection of the island electrode group on the substrate and the orthographic projection of the second region on the substrate overlap.

10. The radio frequency switch of claim 1, wherein, The interdigital electrode group and the island electrode group are arranged in the same layer.

11. The radio frequency switch of claim 1, wherein, The interdigital electrode group and the island electrode group are arranged in different layers; the plurality of island electrode groups are arranged in a first conductive layer located on the side of the semiconductor layer away from the substrate; the plurality of interdigital electrode groups are arranged in a second conductive layer located on the side of the first conductive layer away from the substrate.

12. The radio frequency switch of claim 11, wherein, The first conductive layer further comprises a first contact electrode and a second contact electrode, the first electrode is electrically connected with the first region through the first contact electrode, and the second electrode is electrically connected with the second region through the second contact electrode.

13. The radio frequency switch of claim 11, wherein, An insulating layer is further arranged between the first conductive layer and the semiconductor layer, the insulating layer is provided with a plurality of first through holes and a plurality of second through holes, the orthographic projection of the first through hole on the semiconductor layer falls into the first region, and the orthographic projection of the second through hole on the semiconductor layer falls into the second region. The first electrode is electrically connected with the first region through the first through hole, and the second electrode is electrically connected with the second region through the second through hole. In the direction parallel to the substrate, the minimum distance between the first through hole and the third region is less than or equal to the minimum distance between the geometric center of the first region and the third region, and the minimum distance between the second through hole and the third region is less than or equal to the minimum distance between the geometric center of the second region and the third region.

14. The radio frequency switch of any one of claims 2-13, wherein, The plurality of semiconductor patterns are integrated along the second direction, the first region is a P region, the second region is an N region, and the third region is an I region. The plurality of semiconductor patterns are arranged in the order of the P region, the I region, the N region, the I region, the P region, the I region, and the N region.

15. The radio frequency switch of any of claims 2-9, 11-13, wherein, The interdigital electrode group comprises a plurality of first branch groups arranged along a first direction, and the first branch groups are located in a region between the first electrode and the second electrode. The first branch group comprises a first branch and a second branch extending along a second direction, the first branch is electrically connected with the first electrode, and the second branch is electrically connected with the second electrode. The orthographic projection of the first branch on the second branch in the first direction in the same first branch group overlaps the second branch. In at least part of the semiconductor patterns, the orthographic projection of one of the semiconductor patterns on the substrate overlaps the first branch and the second branch in the same first branch group, respectively.

16. The radio frequency switch of claim 15, wherein, The interdigital electrode group comprises a plurality of second branch groups arranged along the first direction, and one row of the first branch groups and one row of the second branch groups are alternately arranged in the region between the first electrode and the second electrode along the second direction. The second branch group comprises a third branch and a fourth branch extending along the second direction, the third branch is electrically connected with the first electrode, and the fourth branch is electrically connected with the second electrode; the orthographic projection of the third branch on the fourth branch in the first direction in the same second branch group overlaps the fourth branch. In at least part of the semiconductor patterns, the orthographic projection of one of the semiconductor patterns on the substrate overlaps the first branch and the second branch in the same first branch group, respectively. In at least part of the semiconductor patterns, the orthographic projection of one of the semiconductor patterns on the substrate overlaps the third branch and the fourth branch in the same second branch group, respectively.

17. The radio frequency switch of claim 16, wherein, The first region is a P region, the second region is an N region, and the third region is an I region; In the semiconductor pattern that overlaps with the same first branch group, the N region, the I region, and the P region are arranged in sequence along the first direction; In the semiconductor pattern that overlaps with the same second branch group, the P region, the I region, and the N region are arranged in sequence along the first direction.

18. The radio frequency switch of claim 16, wherein, The number of the island-shaped electrode groups is equal to the sum of the number of the first branch groups and the number of the second branch groups.

19. The radio frequency switch of claim 16, wherein, The line width of the first branch, the second branch, the third branch, and the fourth branch along the first direction is substantially equal, and in the case that the line width of the first branch is less than a preset value, The orthographic projection of the island-shaped electrode group on the substrate overlaps with the orthographic projection of at least one of the first branch group and the second branch group on the substrate.

20. The radio frequency switch of any of claims 2-9, 11-13, 16-19, wherein, Each island-shaped electrode in the same radio frequency switch is electrically connected together and used for transmitting a voltage control signal.

21. The radio frequency switch of any of claims 2-9, 11-13, 16-19, wherein, The island-shaped electrode includes a hollow region, The planar graph of the orthographic projection of the island-shaped electrode on the substrate is a ring shape.

22. The radio frequency switch of claim 21, wherein, The outer contour of the ring shape is the same as the shape of the outer contour of the planar graph of the third region.

23. The radio frequency switch of claim 21, wherein, At least one of the planar graph of the ring shape outer contour and the planar graph of the ring shape inner contour is a concave polygon.

24. The radio frequency switch of claim 21, wherein, The width of the ring shape is greater than 0 and less than or equal to 1 μm.

25. The radio frequency switch of claim 11, wherein, The orthographic projection of the first electrode, the second electrode, and the island-shaped electrode on the substrate is a spiral shape; the orthographic projection of the island-shaped electrode on the substrate is located between the orthographic projection of the first electrode and the orthographic projection of the second electrode on the substrate; The orthographic projection of the semiconductor pattern on the substrate overlaps with the orthographic projection of the island-shaped electrode on the substrate.

26. The radio frequency switch of claim 25, wherein, The radio frequency switch further includes a first conductive structure and a second conductive structure, the first conductive structure is disposed in the same layer as the island-shaped electrode, and the second conductive structure is disposed in the same layer as the second electrode; The orthographic projection of the first conductive structure and the second conductive structure on the substrate is a spiral shape, and a passivation layer and / or an insulating layer is disposed between the first conductive structure and the second conductive structure; The radio frequency switch includes a diode, one of the first electrode and the second electrode is used as the positive electrode of the diode, and the other is used as the negative electrode of the diode; The radio frequency switch further includes an inductor, the first conductive structure and the second conductive structure are electrically connected to form a coil of the inductor.

27. The radio frequency switch of claim 1, wherein, The orthographic projection of the first electrode on the substrate, the orthographic projection of the second electrode on the substrate, and the orthographic projection of the third region on the substrate do not overlap with each other; In the case that the interdigital electrode group includes a first branch group and a second branch group, the orthographic projection of the first branch group on the substrate and the orthographic projection of the second branch group on the substrate do not overlap with the orthographic projection of the third region on the substrate.

28. The radio frequency switch of claim 2, wherein, The radio frequency switch comprises a first connecting line and a second connecting line extending along the second direction, the first connecting line being used for electrically connecting the first electrodes together, and the second connecting line being used for connecting the second electrodes together.

29. The radio frequency switch of claim 13, wherein, The radio frequency switch further comprises a buffer layer, the insulating layer and a passivation layer. The buffer layer is located between the substrate and the semiconductor layer, the insulating layer is located on a side of the semiconductor layer away from the substrate, and the passivation layer is located between the first conductive layer and the second conductive layer.

30. A radio frequency chip, wherein, The radio frequency switch comprises a first connecting line and a second connecting line extending along the second direction, the first connecting line being used for electrically connecting the first electrodes together, and the second connecting line being used for connecting the second electrodes together.

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