Beam current measurement system, beam current measurement method, and ion implanter

Abstract

A beam current measurement system, a beam current measurement method, and an ion implanter. When the beam current measurement system works, a first drive unit is connected to a carrying unit and is used for driving the carrying unit to move, such that a first measurement unit, a second measurement unit and a third measurement unit reach a coverage surface of an ion beam current. The first measurement unit can measure the deflection angle and / or density distribution of the ion beam current in a second direction, the second measurement unit can measure the total dose of the ion beam current and / or density distribution thereof in a third direction, and the third measurement unit can measure the deflection angle and divergence angle of the ion beam current in the third direction. Thus, the beam current measurement system can measure a plurality of parameters of the ion beam current at the same position, thereby reducing the complexity of measuring the parameters of the ion beam current, and improving the measurement efficiency.

Description

Beam flow measurement system, beam flow measurement method and ion implanter Technical Field

[0001] This invention relates to the field of semiconductors, and more particularly to a beam flow measurement system, a beam flow measurement method, and an ion implanter. Background Technology

[0002] In ion implantation equipment, the beam flux measurement system, as one of its core components, is responsible for monitoring and controlling key parameters of the ion beam. Specifically, the beam flux measurement system needs to monitor key performance parameters such as the density distribution and implantation angle of the ion beam in real time to ensure the stability and accuracy of the implantation process. With the rapid development of semiconductor manufacturing technology, the performance requirements for beam flux measurement systems are constantly increasing. Existing technologies face many challenges in meeting the demands for high-precision and high-stability measurements, and technological innovation is urgently needed to adapt to increasingly stringent production requirements.

[0003] In existing technologies, multiple measuring devices located at different positions are typically used to measure parameters such as the injection angle and dose of an ion beam. However, this configuration of multiple measuring devices results in a complex overall structure and insufficient operational stability and reliability. Furthermore, although multiple measuring devices can acquire various parameters of the ion beam at different locations, it is difficult to achieve comprehensive parameter measurement of the ion beam at the same location. This is because, in practice, moving different measuring devices to the same location simultaneously for beam testing presents significant limitations and operational difficulties.

[0004] Therefore, there is an urgent need for a technology that can efficiently measure parameters such as the injection angle and dose of the ion beam at the same location, in order to simplify the system structure and improve the stability and accuracy of the measurement. Summary of the Invention

[0005] The problem solved by this invention is to provide a beam current measurement system, beam current measurement method and ion implanter that can detect multiple parameters of ion beam current at the same location, reducing the cumbersomeness of detecting ion beam current parameters and improving detection efficiency.

[0006] To address the aforementioned problems, this invention provides a beam current measurement system for detecting an ion beam moving along a first direction in an ion implanter, comprising: a carrier unit; a first detection unit disposed on the carrier unit, the first detection unit being used to detect the deflection angle and / or density distribution of the ion beam in a second direction, the second direction being perpendicular to the first direction; a second detection unit disposed on the carrier unit, the second detection unit being used to detect the total dose of the ion beam and / or its density distribution in a third direction; a third detection unit disposed on the carrier unit, the third detection unit being used to detect the deflection angle and / or divergence angle of the ion beam in a third direction, the third direction being perpendicular to both the first and second directions; and a first driving unit connected to the carrier unit, used to drive the carrier unit to move, such that the first detection unit, the second detection unit, and the third detection unit reach the coverage area of ​​the ion beam.

[0007] The present invention also provides a beam current measurement method, employing the aforementioned beam current measurement system, comprising: a first driving unit driving the carrier unit to move, such that the first detection unit, the second detection unit, and the third detection unit reach the coverage area of ​​the ion beam, for detecting the deflection angle and / or density distribution of the ion beam in a second direction, the total dose of the ion beam and / or the density distribution in a third direction, and the deflection angle and / or divergence angle of the ion beam in the third direction.

[0008] The present invention also provides an ion implanter, including: the beam flow measurement system.

[0009] Compared with the prior art, the technical solution of the present invention has the following advantages:

[0010] In this embodiment of the invention, the first detection unit, the second detection unit, and the third detection unit of the beam current measurement system are all mounted on a support unit. When the beam current measurement system is operating, a first driving unit is connected to the support unit and drives the support unit to move, allowing the first, second, and third detection units to reach the coverage area of ​​the ion beam. The first detection unit can detect the deflection angle and / or density distribution of the ion beam in a second direction; the second detection unit can detect the total dose of the ion beam and / or its density distribution in a third direction; and the third detection unit can detect the deflection angle and divergence angle of the ion beam in a third direction. Therefore, the beam current measurement system can detect multiple parameters of the ion beam, reducing the complexity of parameter detection and improving detection efficiency. Attached Figure Description

[0011] Figure 1 is a schematic diagram of the beam flow measurement system according to an embodiment of the present invention;

[0012] Figure 2 is a cross-sectional view at point AA in Figure 1;

[0013] Figure 3 is a cross-sectional view at point BB in Figure 1;

[0014] Figure 4 is a cross-sectional view at CC in Figure 1;

[0015] Figure 5 is a schematic diagram of the arrangement of the third Faraday cup in another embodiment of the third detection unit of the present invention in Figure 1;

[0016] Figure 6 is a cross-sectional view at DD in Figure 5;

[0017] Figure 7 is a schematic diagram of the arrangement of the third Faraday cup in another embodiment of the third detection unit of the present invention in Figure 1;

[0018] Figure 8 is a cross-sectional view of EE in Figure 7;

[0019] Figures 9-11 are schematic diagrams of the structure of the first detection unit before and after angular swinging around a third direction in an embodiment of the present invention;

[0020] Figure 12 shows the relationship between the current value detected by the first detection unit and the swing angle when the first detection unit swings around a third direction. Detailed Implementation

[0021] As the background technology indicates, although multiple measuring devices can acquire various parameters of the ion beam at different locations, it is difficult to achieve comprehensive parameter measurement of the ion beam at the same location. This is because, in practice, moving different measuring devices to the same location simultaneously for beam testing presents significant limitations and operational difficulties. There is an urgent need for a technology that can efficiently measure parameters such as the injection angle and dose of the ion beam at the same location to simplify the system structure and improve the stability and accuracy of the measurement.

[0022] To address the aforementioned problems, the beam current measurement system provided in this embodiment of the invention is used to detect an ion beam moving along a first direction in an ion implanter, comprising: a carrier unit; a first detection unit disposed on the carrier unit, used to detect the deflection angle and / or density distribution of the ion beam in a second direction, the second direction being perpendicular to the first direction; a second detection unit disposed on the carrier unit, used to detect the total dose of the ion beam and / or its density distribution in a third direction; a third detection unit disposed on the carrier unit, used to detect the deflection angle and divergence angle of the ion beam in a third direction, the third direction being perpendicular to both the first and second directions; and a first driving unit connected to the carrier unit, used to drive the carrier unit to move, such that the first detection unit, the second detection unit, and the third detection unit reach the coverage area of ​​the ion beam. When the beam current measurement system is operating, the first detection unit can detect the deflection angle and / or density distribution of the ion beam in the second direction, the second detection unit can detect the total dose of the ion beam and / or its density distribution in a third direction, and the third detection unit can detect the deflection angle and divergence angle of the ion beam in a third direction. Therefore, the beam current measurement system can detect multiple parameters of the ion beam, reducing the complexity of detecting ion beam parameters and improving detection efficiency.

[0023] To make the above-mentioned objects, features and advantages of the embodiments of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0024] Figure 1 is a schematic diagram of the beam flow measurement system according to an embodiment of the present invention.

[0025] As shown in Figure 1, the beam current measurement system is used to detect the ion beam moving along the first direction Z in the ion implanter. It includes: a support unit (located behind the plate-like structure 40 in Figure 1, not shown); a first detection unit 10 (as shown in Figure 1), mounted on the support unit, which detects the deflection angle of the ion beam in the second direction X (the deflection angle of the ion beam relative to the first direction Z in the plane formed by the first direction Z and the second direction X), and the density distribution of the ion beam in the second direction X, which is perpendicular to the first direction Z; and a second detection unit 20 (as shown in Figure 1), mounted on the support unit. The first detection unit 10 is used to detect the total dose of the ion beam and its density distribution in the third direction Y. The second detection unit 20 (as shown in Figure 1) is disposed on the carrier unit and is used to detect the deflection angle (the deflection angle of the ion beam relative to the first direction Z in the plane formed by the first direction Z and the third direction Y) and the divergence angle of the ion beam in the third direction Y. The third direction Y is perpendicular to both the first direction Z and the second direction X. The first driving unit 50 (as shown in Figure 1) is connected to the carrier unit and is used to drive the carrier unit to move so that the first detection unit 10, the second detection unit 20 and the third detection unit 30 reach the coverage area of ​​the ion beam.

[0026] In this embodiment of the invention, the first detection unit 10, the second detection unit 20, and the third detection unit 30 of the beam current measurement system are all mounted on a support unit. A first driving unit 50 is connected to the support unit. When the beam current measurement system is working, the first driving unit 50 drives the support unit to move, allowing the first detection unit 10, the second detection unit 20, and the third detection unit 30 to reach the coverage area of ​​the ion beam. The first detection unit 10 can detect the deflection angle of the ion beam in the second direction X and the density distribution of the ion beam in the second direction X. The second detection unit 20 can detect the total dose of the ion beam and its density distribution in the third direction Y. The third detection unit 30 can detect the deflection angle and divergence angle of the ion beam in the third direction Y. Therefore, the beam current measurement system can detect multiple parameters of the ion beam, reducing the complexity of parameter detection and improving detection efficiency.

[0027] The support unit provides a stable mounting platform for the first detection unit 10, the second detection unit 20, and the third detection unit 30, ensuring the positional stability and measurement accuracy of the detection units during beam flow measurement. In addition, the support unit is connected to the first drive unit 50, enabling movement so that each detection unit can sequentially reach the coverage area of ​​the ion beam for turn-by-turn detection.

[0028] As shown in Figure 1, the first detection unit 10, the second detection unit 20, and the third detection unit 30 share a plate-shaped structure 40. The plate-shaped structure 40 is provided with a first through hole 401 for the ion beam to pass through; a second through hole 402 for the ion beam to pass through, and spaced apart from the first through hole 401 in the third direction Y; and a third through hole 403 for the ion beam to pass through, and spaced apart from the first through hole 401 and the second through hole 402 in the third direction Y.

[0029] The first through-hole 401 corresponds to the first Faraday cup 101 of the first detection unit 10, the second through-hole 402 corresponds to the second Faraday cup 201 of the second detection unit 20, and the third through-hole 403 corresponds to the third Faraday cup 301 of the third detection unit 30. The first through-hole 401, the second through-hole 402, and the third through-hole 403 are used to allow the ion beam to pass through and be received by the corresponding Faraday cup. In addition, the first through-hole 401, the second through-hole 402, and the third through-hole 403 are arranged at intervals in the third direction Y to avoid mutual interference between different detection units during the detection of the ion beam.

[0030] Specifically, the plate-like structure 40. This structure is simple and easy to machine and assemble precisely. The plate-like structure 40 provides sufficient space to install the detection unit and allows the arrangement of the first through-hole 401, the second through-hole 402, and the third through-hole 403 on the plate to allow the ion beam to pass through. The plate-like structure is typically made of graphite material.

[0031] In this embodiment, a first through hole 401 is located on the plate-like structure 40, and the first through hole is used to correspond to the first Faraday cup 101; a second through hole 402 is located on the plate-like structure 40, and the second through hole is used to correspond to the second Faraday cup 201; a third through hole 403 is located on the plate-like structure 40, and the third through hole is used to correspond to the third Faraday cup 301.

[0032] The first detection unit 10 can effectively assess the stability and alignment of the ion beam by accurately measuring the deflection angle of the ion beam in the second direction X; at the same time, by detecting the density distribution, it can analyze the uniformity distribution of the ion beam, thereby providing reliable data support for the ion implantation process.

[0033] As shown in Figure 2, the first detection unit 10 includes a first Faraday cup 101 and a plate structure 40. The plate structure 40 is provided with a first through hole 401, through which the ion beam passes. The first through hole 401 is used to correspond to the first Faraday cup 101 in the first direction Z.

[0034] The first through-hole 401 serves as a channel for the ion beam to pass through and corresponds to the first Faraday cup 101 in the first direction Z. This enables the first detection unit 10 to detect the ion beam in the second direction X, and to accurately measure the deflection angle and density distribution of the beam in the second direction.

[0035] In this embodiment, there are multiple first through holes 401, and the multiple first through holes 401 are distributed at intervals along the second direction X; there are multiple first Faraday cups 101, and they are distributed at intervals along the second direction X, with each of the multiple first Faraday cups 101 corresponding to one of the multiple first through holes 401.

[0036] The first detection unit 10 further includes: a first signal acquisition module, connected to a plurality of first Faraday cups 101, for acquiring current signals obtained by the plurality of first Faraday cups 101; and a first data processing module, connected to the first signal acquisition module, for analyzing the current signals acquired by the plurality of first Faraday cups 101 acquired by the first signal acquisition module to obtain the density distribution of the ion beam in the second direction X.

[0037] By setting multiple first through-holes 401 and corresponding first Faraday cups 101, with the multiple first Faraday cups 101 spaced apart along the second direction X, multi-point detection of the ion beam can be achieved in the second direction X. The first signal acquisition module is responsible for collecting the current signals generated when the ion beam passes through each Faraday cup in real time. Subsequently, the first data processing module analyzes and processes the acquired current signal data to calculate the density distribution of the ion beam in the second direction X.

[0038] The beam flow measurement system further includes a second driving unit (not shown in the figure), which drives the carrier unit to swing around the third direction Y. The carrier unit drives the plate structure 40 and the first Faraday cup 101 to swing around the third direction Y, so that the first detection unit 10 can detect the deflection angle of the ion beam in the second direction X.

[0039] The second detection unit 20 is used to accurately measure the total dose of the ion beam and its density distribution in the third direction Y, thereby providing a precise basis for total dose control in the ion implantation process.

[0040] In this embodiment, the second detection unit 20 includes a second Faraday cup 201 and a plate structure 40. The plate structure 40 is provided with a second through hole 402 for the ion beam to pass through. The second through hole 402 is used to correspond to the second Faraday cup 201 in the first direction Z and is spaced apart from the first through hole 401 in the third direction Y.

[0041] The second through-hole 402 not only corresponds to the second Faraday cup 201 in the first direction Z, but also maintains a distance from the first through-hole 401 in the third direction Y. This arrangement avoids interference between different through-holes, improves the detection accuracy and reliability of the system, and enables the second detection unit 20 to independently and accurately measure the total dose of the beam.

[0042] In this embodiment, there is one second through hole 402. The second through hole 402 corresponds to the second detection unit 20.

[0043] The second detection unit 20 further includes: a second signal acquisition module, connected to all the second Faraday cups 201, for acquiring the current signal obtained by the second Faraday cups 201; and a second data processing module, connected to the second signal acquisition module, for analyzing the current signal acquired by the second signal acquisition module to obtain the total dose of the ion beam and its density distribution in the third direction Y.

[0044] As the ion beam passes through the second through-hole 402, the second Faraday cup 201 synchronously receives the current signal generated by the ion beam. The second signal acquisition module continuously monitors the current signal of each second Faraday cup 201, acquiring and recording the current signal obtained by the second Faraday cup 201 in real time. The second data processing module converts all the current signals acquired by the second Faraday cup 201 into the dose of the ion beam using a pre-calibrated conversion coefficient. Factors such as the area of ​​the Faraday cup and the energy distribution of the ion beam are considered during the conversion process to ensure the accuracy of the conversion result.

[0045] It should be noted that the second Faraday cup 201 may be a single Faraday cup body, or it may include multiple Faraday cup bodies spaced apart in the second direction X. The area formed by the openings of the second Faraday cup 201 is greater than or equal to the area of ​​the second through-hole 402, so that the ion beam can be completely received by the multiple second Faraday cups 201 when passing through the second through-hole 402.

[0046] In this embodiment, as shown in FIG3, a plurality of second Faraday cups 201 are arranged in an overlapping and continuous manner in the second direction X, and any two adjacent second Faraday cups 201 have an overlapping portion in the second direction X, to prevent ions from leaking out from adjacent second Faraday cups 201. Specifically, the cross-section of the second Faraday cups 201 is stepped.

[0047] In other embodiments, the second detection unit 20 includes a second Faraday cup 201, the shape of which is the same as the shape of the second through-hole 402. Furthermore, the second Faraday cup 201 has only one cup body, and the area of ​​the opening of the second Faraday cup 201 is greater than or equal to the area of ​​the second through-hole 402, so that the ion beam, after passing through the second through-hole 402, can be completely received by a single second Faraday cup 201.

[0048] The third detection unit 30 is used to detect the deflection angle and divergence angle of the ion beam in the third direction Y (perpendicular to the first direction Z and the second direction X), which is beneficial to optimize the ion implantation process and improve implantation accuracy and efficiency.

[0049] In this embodiment, as shown in Figures 1 and 4, and Figures 5 and 6, the third detection unit 30 includes a plurality of third Faraday cups 301 and a plate structure 40. The plate structure 40 is provided with a third through hole 403, through which the ion beam passes. The third through hole 403 is used to correspond to the third Faraday cup 301 in the first direction Z, and is spaced apart from the first through hole 401 and the second through hole 402 in the third direction Y. This allows the third detection unit 30 to independently measure the deflection angle and divergence angle of the beam in the third direction Y.

[0050] As shown in Figures 7 and 8, there are multiple third Faraday cups 301, which are distributed at intervals along the third direction Y.

[0051] The third detection unit 30 includes: a third signal acquisition module, connected to multiple third Faraday cups 301, for detecting the current signals of the multiple third Faraday cups 301; and a third data processing module, connected to the third signal acquisition module, for analyzing the current signals acquired by the multiple third Faraday cups 301 by the third signal acquisition module to obtain the density distribution of the ion beam in the third direction Y.

[0052] The arrangement of multiple third through-holes 403 and their spacing along the third direction Y enables the third signal acquisition module to obtain current signals from multiple third Faraday cups 301 at different positions along the third direction Y, achieving multi-point detection. The third signal acquisition module is responsible for acquiring these current signal data in real time. Subsequently, the third data processing module analyzes and processes the acquired current signal data to calculate the density distribution of the ion beam in the third direction Y.

[0053] In other embodiments, as shown in Figures 1, 7, and 8, at least one third Faraday cup 301 includes a plurality of Faraday cup bodies 301a along the second direction X. Adjacent Faraday cup bodies 301a are spaced apart by a distance. As an example, the plurality of Faraday cup bodies 301a are distributed in a matrix manner in the plane containing the second direction X and the third direction Y.

[0054] In this embodiment, the ion beam is elliptical or elongated in the cross-section containing the second direction X and the third direction Y, and the length direction of the ellipse or elongated shape is parallel to the third direction Y. In other words, the ion beam has a smaller size in the second direction X and a larger size in the third direction Y. When the cross-sectional shape and length direction of the ion beam are known, the first detection unit 10, the second detection unit 20, and the third detection unit 30 can be specifically configured according to the shape characteristics of the beam cross-section, ensuring that the beam flow measurement system can detect multiple parameters of the ion beam at the same location, reducing the complexity of detecting ion beam parameters and improving detection efficiency.

[0055] The beam flow measurement system also includes: a base (not shown in the figure); a first drive unit 50, fixedly mounted on the base, the first drive unit 50 including a movable output end connected to the carrier unit; and a second drive unit, fixedly mounted on the movable output end, the second drive unit including a rotary output end connected to the carrier unit in a transmission manner.

[0056] The base provides a stable mounting platform for fixing the first drive unit 50. The second drive unit is fixedly mounted on the movable output end, which has a rotating output end connected to the carrier unit. This rotating output end drives the carrier unit to swing angularly around the third direction Y, and the first detection unit 10 swings angularly around the third direction Y with the carrier unit. Through the rotation function of the second drive unit, the first detection unit 10 can rotate around the third direction Y to adjust to a suitable angle to detect the deflection angle of the ion beam in the second direction X. The first drive unit is fixedly mounted on the base and has a movable output end connected to the carrier unit, enabling it to drive the carrier unit to move linearly along the third direction Y. Through the movement function of the first drive unit, the carrier unit allows the first detection unit 10, the second detection unit 20, and the third detection unit 30 to alternately enter the coverage area of ​​the ion beam, achieving comprehensive detection of the total ion beam dose, the density distribution and deflection angle of the ion beam in the second direction X, and the deflection angle, divergence angle, and density distribution of the ion beam in the third direction Y.

[0057] In this embodiment, the first driving unit 50 is used to drive the bearing unit to move along the third direction Y.

[0058] In this embodiment, the first detection unit 10, the second detection unit 20 and the third detection unit 30 are arranged at intervals along the third direction Y.

[0059] The first detection unit 10, the second detection unit 20, and the third detection unit 30 are arranged at intervals along the third direction Y, so that the first detection unit 10, the second detection unit 20, and the third detection unit 30 are physically separated from each other, reducing electromagnetic interference or physical obstruction between them and ensuring the accuracy of the measurement data.

[0060] As shown in Figure 1, the first detection unit 10, the second detection unit 20, and the third detection unit 30 on the carrier unit are arranged sequentially in the third direction Y. In other embodiments, the first detection unit 10, the second detection unit 20, and the third detection unit 30 may have other arrangements in the third direction Y, which are not limited here.

[0061] This invention also provides a beam current measurement method, employing the aforementioned beam current measurement system, including: a first driving unit 50, which drives a carrying unit to move, such that a first detection unit 10, a second detection unit 20, and a third detection unit 30 reach the coverage area of ​​the ion beam, for detecting the density distribution and deflection angle of the ion beam in the second direction X, the total dose of the ion beam and its density distribution in the Y direction, and the deflection angle and divergence angle of the ion beam in the third direction Y.

[0062] The beam flow measurement system further includes: a second driving unit, which drives the carrier unit to swing around the third direction Y, and the carrier unit drives the first detection unit 10 to swing around the third direction Y to detect the deflection angle of the ion beam in the second direction X.

[0063] The beam current measurement method based on the beam current measurement system can detect multiple parameters of the ion beam, reducing the complexity of detecting ion beam parameters and improving detection efficiency.

[0064] The first detection unit 10 includes a first Faraday cup 101 and a plate structure 40. The plate structure 40 is provided with a first through hole 401 for the ion beam to pass through. The first through hole 401 corresponds to the first Faraday cup 101 in the first direction Z. In the step of the first driving unit 50 driving the carrier unit to move, the first detection unit 10 is placed in the coverage area of ​​the ion beam.

[0065] As shown in Figures 9-11, the beam current measurement system also includes a second driving unit. The second driving unit drives the carrier unit to swing around the third direction Y. The carrier unit drives the first detection unit to swing around the third direction Y. The system detects the deflection angle of the ion beam in the second direction X and obtains the swing angle when the current intensity of the first Faraday cup 101 reaches its maximum. The swing angle is used as the deflection angle of the ion beam in the second direction X.

[0066] In this embodiment, during the step of the first driving unit 50 driving the carrier unit to move, the first detection unit 10 is positioned on the coverage surface of the ion beam, and the plate structure 40 is perpendicular to the theoretical beam at this time. The beam flow measurement system also includes a second driving unit. During the step of the second driving unit driving the carrier unit to swing around the third direction Y, the angle at which the current intensity of the first Faraday cup 101 reaches its maximum is obtained, and the angle of swing is used as the deflection angle of the ion beam in the second direction X.

[0067] In this embodiment, during the step of the first driving unit 50 driving the carrier unit to move, the first driving unit 50 drives the carrier unit to move along the third direction Y.

[0068] The first driving unit 50 moves the carrying unit, thereby bringing the first detection unit 10 into the coverage area of ​​the ion beam, enabling the first detection unit 10 to effectively receive the ion beam. In this case, the second driving unit drives the carrying unit to oscillate around a third direction Y, which in turn causes the first detection unit 10 to oscillate around the third direction Y; that is, the first Faraday cup 101 and the plate structure 40 oscillate around the third direction Y. By adjusting the angle of the first detection unit 10, the relative angle between the first detection unit 10 and the ion beam is changed.

[0069] As shown in Figure 9, the ion beam has a certain deflection angle in the X direction. The first detection unit 10 does not rotate. At this time, part of the ion beam passing through the first channel 401 is received by the first Faraday cup 101, while the other part is not received by the first Faraday cup 101. As a result, the current value measured by the first Faraday cup 101 is too small. The current value at this time corresponds to point L in Figure 12.

[0070] As shown in Figure 10, after the first detection unit 10 rotates by an angle α, the current value measured by the first Faraday cup 101 is at its maximum. This indicates that the opening of the first Faraday cup 101 is directly facing the direction of the ion beam. The recorded swing angle α at this time is the deflection angle of the ion beam in the second direction X, corresponding to point M in Figure 12.

[0071] If the first detection unit 10 continues to rotate, part of the ion beam passing through the first channel 401 will be received by the first Faraday cup 101, while the other part will not be received by the first Faraday cup 101 (as shown in Figure 11). As a result, the current value measured by the first Faraday cup 101 will be too small. The current value at this time corresponds to point R in Figure 12.

[0072] There are multiple first through holes 401, and the multiple first through holes 401 are distributed at intervals along the second direction X; there are multiple first Faraday cups 101 in the first detection unit 10, and they are distributed at intervals along the second direction X, and the multiple first Faraday cups 101 correspond one-to-one with the multiple first through holes 401.

[0073] In this embodiment, during the step of the first driving unit 50 driving the carrier unit to move, the first detection unit 10 is positioned within the coverage area of ​​the ion beam, and the magnitudes of current signals from multiple first Faraday cups 101 are collected. The current signals from the multiple first Faraday cups 101 are analyzed to obtain the density distribution of the ion beam in the second direction X.

[0074] The first detection unit 10 further includes: a first signal acquisition module connected to multiple first Faraday cups 101; and a first data processing module connected to the first signal acquisition module. Accordingly, the specific steps include: acquiring the magnitude of the current signals obtained from the multiple first Faraday cups 101 through the first signal acquisition module; and analyzing the current signals acquired by the multiple first Faraday cups 101 by the first signal acquisition module to obtain the density distribution of the ion beam current in the second direction X.

[0075] The first signal acquisition module is connected to all the first Faraday cups 101 in the second direction X, and is used to acquire the magnitude of the current signal obtained by each Faraday cup in real time. Subsequently, the first data processing module receives the current signals from the first signal acquisition module and analyzes and processes these signals. By combining the magnitude of the current signal of each Faraday cup with its position information in the second direction X, a density distribution curve of the ion beam in the second direction X is plotted. This density distribution curve reflects the density variation of the ion beam in the second direction X, which helps to determine the uniformity and quality of the beam. If non-uniform density distribution is found, the parameters of the ion implanter can be further adjusted to optimize the characteristics of the ion beam.

[0076] The second detection unit 20 includes a second Faraday cup 201 and a plate structure 40. The plate structure 40 is provided with a second through hole 402 for the ion beam to pass through. The second through hole 402 corresponds to the second Faraday cup 201 in the first direction Z.

[0077] In this embodiment, during the step of the first driving unit 50 driving the carrier unit to move, the second detection unit 20 is positioned within the coverage area of ​​the ion beam, and the current signal collected by the second Faraday cup is analyzed to obtain the total dose of the ion beam and its density distribution in the third direction Y.

[0078] Specifically, the first driving unit 50 drives the carrier unit to move, and the carrier unit drives the second detection unit 20 to move along the third direction Y. During the movement, the current collected by the second Faraday cup 201 is acquired in real time, thereby obtaining the current value distribution in the third direction Y during the movement. Based on the current value distribution, the density distribution of the ion beam in the third direction Y can be obtained, and based on the density distribution, the total dose of the ion beam can be calculated.

[0079] The second detection unit 20 further includes: a second signal acquisition module connected to all the second Faraday cups 201; and a second data processing module connected to the second signal acquisition module. Specifically, the steps include: the second data processing module analyzing the current signal acquired by the second signal acquisition module to obtain the total dose of the ion beam and its density distribution in the third direction Y.

[0080] The second detection unit 20 is mounted on the carrier unit and includes one or more second Faraday cups 201. When the second detection unit 20 is located within the beam coverage area, the second signal acquisition module is connected to the second Faraday cup 201 to acquire the obtained current signal in real time. Since the current intensity received by the second Faraday cup 201 is proportional to the dose of the ion beam, the second data processing module analyzes and calculates the current signal acquired by the second signal acquisition module to finally obtain the dose value of the ion beam.

[0081] The third detection unit includes a third Faraday cup and a plate-like structure; the plate-like structure is provided with a third through hole for the ion beam to pass through, and the third through hole corresponds to the third Faraday cup in the first direction.

[0082] In this embodiment, during the step of the first driving unit 50 driving the carrier unit to move, the third detection unit 30 is positioned within the coverage area of ​​the ion beam, and the current signal collected by the third Faraday cup is analyzed to obtain the divergence angle and deflection angle of the ion beam in the third direction Y.

[0083] In this embodiment, there are multiple third Faraday cups 301, which are spaced apart along the third direction Y. In this embodiment, during the step of the first driving unit 50 driving the carrier unit to move, the multiple third Faraday cups 301 are placed in the coverage area of ​​the ion beam. Multiple current signals are collected by the multiple third Faraday cups 301, and the multiple current signals collected by the multiple third Faraday cups 301 are analyzed to obtain the divergence angle and deflection angle of the ion beam in the third direction Y.

[0084] The specific steps include: acquiring current signals from multiple third Faraday cups 301 through the third signal acquisition module; and analyzing the current signals from multiple third Faraday cups 301 acquired by the third signal acquisition module to obtain the divergence angle and deflection angle of the ion beam in the third direction Y.

[0085] Because the third signal acquisition module is connected to all third Faraday cups 301 in the third direction Y, it is used to acquire the magnitude of the current signal obtained by each third Faraday cup 301 in real time. Subsequently, the third data processing module receives the current signals from the third signal acquisition module and analyzes and processes these current signals to obtain the density distribution of the ion beam on multiple third Faraday cups. This density distribution reflects the angular situation of the ion beam in the third direction Y, thereby obtaining the divergence angle and deflection angle of the ion beam. If the angle is found to exceed the threshold, the parameters of the ion implanter can be further adjusted to optimize the characteristics of the ion beam.

[0086] In other embodiments, at least one of the third Faraday cups 301 includes multiple Faraday cup bodies 301a along the second direction X. In the step of the first driving unit driving the carrier unit to move, the third Faraday cup is positioned within the coverage area of ​​the ion beam. Multiple current signals are acquired through the multiple third Faraday cup bodies 301a, and the acquired current signals are analyzed to obtain the density distribution of the ion beam in the second direction X. Specific steps include: acquiring the current signals obtained by the multiple Faraday cup bodies 301a in the third Faraday cup 301 through a third signal acquisition module; and analyzing the current signals acquired by the multiple Faraday cup bodies 301a through the third signal acquisition module to obtain the density distribution of the ion beam in the second direction X.

[0087] This invention also provides an ion implanter, including the aforementioned beam flow measurement system.

[0088] The ion implanter provided in this invention includes a beam current measurement system. During operation, this system can detect multiple parameters of the ion beam at the same location, reducing the complexity of parameter detection and improving efficiency. This facilitates precise measurement and control of multidimensional ion beam parameters, significantly enhancing the performance and production efficiency of the ion implanter, and is of great significance to the stability of semiconductor manufacturing processes and product quality.

[0089] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A beam flow measurement system, characterized in that, For detecting an ion beam moving along a first direction in an ion implanter, including: Bearing unit; A first detection unit is disposed on the support unit. The first detection unit is used to detect the deflection angle and / or density distribution of the ion beam in a second direction, wherein the second direction is perpendicular to the first direction. A second detection unit is disposed on the carrier unit. The second detection unit is used to detect the total dose of the ion beam and / or the density distribution in a third direction. A third detection unit is disposed on the support unit. The third detection unit is used to detect the deflection angle and / or divergence angle of the ion beam in a third direction, which is perpendicular to both the first and second directions. The first driving unit, connected to the carrier unit, is used to drive the carrier unit to move, so that the first detection unit, the second detection unit, and the third detection unit reach the coverage area of ​​the ion beam.

2. The beam flow measurement system as described in claim 1, characterized in that, The beam flow measurement system further includes a second driving unit for driving the first detection unit to swing angularly around the third direction.

3. The beam flow measurement system as described in claim 2, characterized in that, The first detection unit includes a first Faraday cup and a plate-like structure; The plate-like structure is provided with a first through hole, through which the ion beam passes, and the first through hole corresponds to the first Faraday cup in the first direction.

4. The beam flow measurement system as described in claim 3, characterized in that, The number of first through holes is multiple, and the multiple first through holes are spaced apart along the second direction; the number of first Faraday cups is multiple, and they are spaced apart along the second direction, with each of the multiple first Faraday cups corresponding to one of the multiple first through holes.

5. The beam flow measurement system as described in claim 1, characterized in that, The second detection unit includes a second Faraday cup and a plate-like structure; The plate-like structure is provided with a second through hole for the ion beam to pass through, and the second through hole corresponds to the second Faraday cup in the first direction.

6. The beam flow measurement system as described in claim 5, characterized in that, The second Faraday cup includes a plurality of Faraday cup bodies spaced apart in the second direction.

7. The beam flow measurement system as described in claim 1, characterized in that, The third detection unit includes multiple third Faraday cups and a plate-like structure; The plurality of third Faraday cups are distributed at intervals along a third direction; The plate-like structure is provided with a third through hole, through which the ion beam passes, and the third through hole corresponds to the plurality of third Faraday cups in the first direction.

8. The beam flow measurement system as described in claim 7, characterized in that, At least one of the third Faraday cups includes a plurality of Faraday cup bodies along the second direction.

9. The beam flow measurement system as described in claim 1, characterized in that, The first driving unit is used to drive the carrier unit to move along the third direction.

10. The beam flow measurement system as described in claim 9, characterized in that, The first detection unit, the second detection unit, and the third detection unit are arranged at intervals along the third direction.

11. A beam current measurement method, characterized in that, The beam flow measurement system according to any one of claims 1 to 10 includes: The first driving unit drives the carrier unit to move, so that the first detection unit, the second detection unit and the third detection unit reach the coverage area of ​​the ion beam, for detecting the deflection angle and / or density distribution of the ion beam in the second direction, the total dose of the ion beam and / or the density distribution in the third direction, and the deflection angle and / or divergence angle of the ion beam in the third direction.

12. The beam flow measurement method as described in claim 11, characterized in that, The first detection unit includes a first Faraday cup and a plate-like structure. The plate-like structure is provided with a first through hole, through which the ion beam passes. The first through hole corresponds to the first Faraday cup in the first direction. In the step of the first driving unit driving the carrier unit to move, the first detection unit is positioned within the coverage area of ​​the ion beam. The beam current measurement system further includes: a second driving unit, which drives the first detection unit to oscillate around the third direction to detect the deflection angle of the ion beam current in the second direction; In the step of driving the first detection unit to swing around the third direction by the second driving unit, the swing angle when the current intensity of the first Faraday cup reaches its maximum is obtained, and the swing angle is used as the deflection angle of the ion beam in the second direction.

13. The beam flow measurement method as described in claim 12, characterized in that, The number of first through holes is multiple, and the multiple first through holes are distributed at intervals along the second direction; the number of first Faraday cups in the first detection unit is multiple, and they are distributed at intervals along the second direction, and the multiple first Faraday cups correspond one-to-one with the multiple first through holes; In the step of the first driving unit driving the carrier unit to move, the first detection unit is positioned within the coverage area of ​​the ion beam, and the magnitudes of current signals from multiple first Faraday cups are collected. The current signals from multiple first Faraday cups are analyzed to obtain the density distribution of the ion beam in the second direction.

14. The beam flow measurement method as described in claim 11, characterized in that, The second detection unit includes a second Faraday cup and a plate-like structure. The plate-like structure is provided with a second through hole for the ion beam to pass through. The second through hole corresponds to the second Faraday cup in the first direction. The first driving unit drives the carrier unit to move along a third direction, acquires the current signal collected during the movement of the second Faraday cup, and obtains the total dose of the ion beam and / or the density distribution in the third direction based on the current signal.

15. The beam flow measurement method as described in claim 11, characterized in that, The third detection unit includes a third Faraday cup and a plate-like structure; The plate-like structure is provided with a third through hole, through which the ion beam passes, and the third through hole corresponds to the third Faraday cup in the first direction; The number of the third Faraday cups is multiple and they are spaced apart along the third direction; In the step of the first driving unit driving the carrier unit to move, the multiple third Faraday cups are positioned within the coverage area of ​​the ion beam. Multiple current signals are collected through the multiple third Faraday cups, and the multiple current signals collected by the multiple third Faraday cups are analyzed to obtain the deflection angle and / or divergence angle of the ion beam in a third direction.

16. The beam flow measurement method as described in claim 15, characterized in that, At least one of the third Faraday cups includes a plurality of Faraday cup bodies along the second direction; In the step of the first driving unit driving the carrier unit to move, the third Faraday cup is positioned within the coverage area of ​​the ion beam. Multiple current signals are collected through multiple Faraday cups, and the collected current signals are analyzed to obtain the density distribution of the ion beam in the second direction.

17. An ion implanter, characterized in that, include: The beam flow measurement system as described in any one of claims 1 to 10.

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