Directional sound-producing screen, display device, and preparation process for directional sound-producing screen

Abstract

A directional sound-producing screen, a display device, and a preparation process for a directional sound-producing screen. The preparation process for the directional sound-producing screen comprises: preparing a vibration layer (1), comprising etching a plurality of first recesses (17) on a first UTG substrate layer (11) by means of a TGV process; preparing a non-vibration layer (2), comprising integrally forming a microstructure (22) on a second UTG substrate layer (21) by means of the TGV process; and bonding frames of the vibration layer (1) and the non-vibration layer (2), wherein after bonding, the microstructure (22) is correspondingly embedded into the first recesses (17). Processing the microstructure (22) by means of TGV drilling technology and integrating same with a nested structure of the first recesses (17) reduces the difficulty of processing the microstructure (22) and facilitates control of the precision of processing same.

Description

A directional sound-emitting screen, a display device, and a manufacturing process for the directional sound-emitting screen. Technical Field

[0001] This invention relates to the field of directional sound generation technology, specifically to a directional sound generation screen, a display device, and a manufacturing process for the directional sound generation screen. Background Technology

[0002] The ultra-thin, narrow-bezel, and even full-screen designs of display devices are leaving less and less space for sound-generating devices. Traditional sound-generating devices are bulky and have limited installation locations, making it difficult to find suitable places and spaces in next-generation display devices. Therefore, it is necessary to redesign sound-generating devices to meet the needs of current display devices.

[0003] Some display device manufacturers have designed methods for generating sound using the screen itself. Screen sound technology, as a surface audio technology, provides a new solution for audio systems in multimedia audiovisual equipment. Currently, transparent screen-based directional speakers that combine display devices with ultrasonic transducers are under development.

[0004] Existing transparent screen directional loudspeakers generally include a vibrating layer, a microstructure, and a non-vibrating layer. The vibrating and non-vibrating layers are bonded together, and the microstructure is supported between the vibrating and non-vibrating layers. At least one electrode layer is provided on both the vibrating and non-vibrating layers to connect to an external driving circuit. The external circuit supplies power to the non-vibrating and vibrating layers, and applies a voltage signal to drive the vibrating layer to vibrate up and down to emit ultrasonic signals. The ultrasonic signals are demodulated by air to produce audible sound.

[0005] When the substrate layer of the vibrating or non-vibrating layer is a UTG (ultra-thin flexible glass) substrate layer, the existing microstructures are formed by directly etching the vibrating or non-vibrating UTG substrate layer. The microstructures do not form a nested structure with the vibrating or non-vibrating layer. Therefore, in this approach, due to the thinness of the UTG, the precision of the etched microstructures is difficult to guarantee, and the fabrication process is quite challenging. Thus, how to ensure the fabrication precision of the microstructures while reducing the difficulty of the fabrication process is a problem that needs to be solved. Summary of the Invention

[0006] The purpose of this invention is to provide a directional sound-emitting screen, a display device, and a manufacturing process for the directional sound-emitting screen.

[0007] To achieve the above objectives, in one aspect, the present invention proposes a directional sound-emitting screen, comprising: a vibration layer, the vibration layer comprising a first UTG substrate layer, a first conductive layer and a first insulating layer, wherein a plurality of first grooves recessed toward the direction away from the non-vibration layer are formed on the surface of the first UTG substrate layer near the non-vibration layer by TGV etching, the first conductive layer is formed on the surface of the first UTG substrate layer near the non-vibration layer and at least covers the area on the surface of the first UTG substrate layer except for the first grooves, and the first insulating layer is formed on the surface of the first conductive layer near the non-vibration layer and covers the first conductive layer;

[0008] The non-vibration layer includes a second UTG substrate layer, multiple microstructures, and a second conductive layer. The microstructures are integrally formed on the surface of the second UTG substrate layer near the vibration layer using a TGV process. The microstructures are protrusions that protrude towards the vibration layer and their height is greater than the depth of the first groove. The second conductive layer is formed on the surface of the second UTG substrate layer near the vibration layer and at least covers the area on the surface of the second UTG substrate layer other than the microstructures.

[0009] The vibrating layer is attached to the frame of the non-vibrating layer, and the microstructure on the non-vibrating layer is embedded in the first groove on the vibrating layer. An air gap is formed between the vibrating layer and the non-vibrating layer through the microstructure to allow the vibrating layer to vibrate up and down.

[0010] In a preferred embodiment, the vibration layer further includes a first edge trace, which is directly formed on at least one edge of the surface of the first conductive layer near the non-vibration layer; or, a second groove is formed on at least one edge of the surface of the first UTG substrate layer near the non-vibration layer, the second groove is covered with the first conductive layer, and the first edge trace is formed by filling the second groove with metal.

[0011] And / or, the non-vibration layer further includes a second edge trace, the second edge trace being directly formed on at least one edge of the surface of the second conductive layer near the vibration layer, or, a third groove is formed on at least one edge of the surface of the second UTG substrate layer near the vibration layer, the third groove being covered by the second conductive layer, and the third groove being filled with metal to form the second edge trace;

[0012] Alternatively, the non-vibrating layer may further include a second edge trace and an edge insulating layer, wherein the second edge trace is directly formed on at least one edge of the surface of the second conductive layer near the vibrating layer; or, a third groove is formed on at least one edge of the surface of the second UTG substrate layer near the vibrating layer, the third groove is covered with the second conductive layer, and the third groove is filled with metal to form the second edge trace, wherein the edge insulating layer is formed on at least one edge of the surface of the second conductive layer near the vibrating layer and covers the second edge trace.

[0013] In a preferred embodiment, when the first edge trace and the second edge trace are formed directly on the edge of the corresponding conductive layer, the height of the first edge trace and the second edge trace are less than or equal to 5 μm and the width is less than 1 mm; when they are filled in the groove, the height of the first edge trace and the second edge trace are both greater than the depth of their respective grooves, and the width of the portion protruding from the groove is also greater than the width of their respective grooves.

[0014] And / or, when filled into the groove, the height of the first edge trace and the second edge trace is greater than or equal to 5 μm, and the width of the portion of the trace extending above the groove is less than 1 mm.

[0015] And / or, the thickness of the edge insulating layer is less than or equal to 5 μm, and the width is greater than the width of the second edge trace;

[0016] And / or, the second and third grooves are also formed by TGV etching.

[0017] In a preferred embodiment, the microstructure is further embedded and fixed in a first groove of the vibration layer by an adhesive; and / or, the adhesive is disposed in the first groove; and / or, the microstructure is embedded in the first groove and encapsulated by the adhesive before the adhesive is cured, and the adhesive is cured after embedding.

[0018] In a preferred embodiment, the vibration layer further includes a first hardened buffer layer and an optical thin film layer, wherein the first hardened buffer layer is formed on the upper surface of the first UTG substrate layer away from the non-vibration layer, and the optical thin film layer is formed on the upper surface of the first hardened buffer layer away from the non-vibration layer;

[0019] And / or, the non-vibration layer further includes a second hardened buffer layer, which is formed on the lower end face of the second UTG substrate layer away from the vibration layer.

[0020] In a preferred embodiment, the thickness of the first hardened buffer layer is 15µm to 25µm, and / or the thickness of the optical thin film layer is 1µm to 5µm; and / or the thickness of the second hardened buffer layer is 2µm to 4µm.

[0021] In a preferred embodiment, the thickness of the first UTG substrate layer is 50µm to 100µm, and / or the depth of the first groove is 20µm to 70µm and the diameter is 20µm to 100µm, and / or the thickness of the first conductive layer is less than 100nm and the sheet resistance is 70Ω to 100Ω, and / or the thickness of the first insulating layer is 6µm to 15µm, and / or the thickness of the second UTG substrate layer is more than 30µm, and / or the height of the microstructure is 30µm to 100µm and the diameter is 100µm to 200µm, the center distance between two adjacent microstructures is 3mm to 3.2mm, and / or the thickness of the second conductive layer is less than 100nm and the sheet resistance is 70Ω to 100Ω, and / or the height of the air gap is 5µm to 15µm.

[0022] On the other hand, the present invention proposes a display device including the aforementioned directional sound-emitting screen.

[0023] Furthermore, this invention proposes a manufacturing process for a directional sound-emitting screen, which includes:

[0024] S1, preparing the vibration layer, wherein S1 includes:

[0025] S11, a plurality of first grooves are formed on the surface of the first UTG substrate layer near the non-vibrating layer by TGV etching.

[0026] S12, a first conductive layer is formed on the surface of the first UTG substrate layer near the non-vibrating layer, and the first conductive layer at least covers the area on the surface of the first UTG substrate layer other than the first groove.

[0027] S13, A first insulating layer covering the first conductive layer is formed on the surface of the first conductive layer near the non-vibrating layer.

[0028] S2, preparing a non-vibrational layer, wherein S2 includes:

[0029] S21, a microstructure is integrally formed on the surface of the second UTG substrate layer near the vibration layer using the TGV process. The microstructure is a protruding structure that protrudes towards the vibration layer and its height is greater than the depth of the first groove.

[0030] S22, a second conductive layer is formed on the surface of the second UTG substrate layer near the vibrating layer, the second conductive layer at least covering the area on the surface of the second UTG substrate layer other than the microstructure;

[0031] S3, the frames of the vibrating layer and the non-vibrating layer are attached together. After attachment, the microstructure on the non-vibrating layer is embedded in the first groove on the vibrating layer, and an air gap is formed between the vibrating layer and the non-vibrating layer through the microstructure to allow the vibrating layer to vibrate up and down.

[0032] In a preferred embodiment, in S11, the edge of the first groove is further sharpened; and / or, in S12, the first conductive layer is formed by magnetron sputtering; and / or, between S12 and S13, a first hardening buffer layer is formed on the upper surface of the first UTG substrate layer away from the non-vibration layer; and / or, the first hardening buffer layer is formed after magnetron sputtering and annealing of the first conductive layer; and / or, the first hardening buffer layer is integrally formed by printing or coating; and / or, between S12 and S13, an optical thin film layer is formed on the upper surface of the first hardening buffer layer away from the non-vibration layer; and / or, in S1... Between steps 2 and S13, a first edge trace is formed on at least one edge of the surface of the first conductive layer near the non-vibrating layer; and / or, the first edge trace is directly formed on at least one edge of the surface of the first conductive layer near the non-vibrating layer, or, a second groove is formed on at least one edge of the surface of the first UTG substrate layer near the non-vibrating layer, the second groove is covered with the first conductive layer, and the first edge trace is formed by filling the second groove with metal; and / or, the first insulating layer is formed by coating, exposure development, or printing processes; and / or, the second groove is also formed by etching using a TGV process; and / or, the edges of the second groove are also sharpened.

[0033] In a preferred embodiment, S2 further includes: S23, forming a second hardened buffer layer on the lower end face of the second UTG substrate layer away from the vibration layer; and / or, the second hardened buffer layer is formed after magnetron sputtering and annealing of the second conductive layer; and / or, the second hardened buffer layer is integrally formed by printing or coating processes; and / or, between S22 and S23, forming a second edge trace on at least one edge of the surface of the second conductive layer near the vibration layer; and / or, the second edge trace is directly formed on at least one edge of the surface of the second conductive layer near the vibration layer, or, a third groove is formed on at least one edge of the surface of the second UTG substrate layer near the vibration layer, the third groove is covered with the second conductive layer, and the third groove is filled with metal to form the second edge trace; and / or, the third groove is also formed by TGV etching; and / or, the edge of the third groove is also sharpened; and / or, S2 further includes forming an edge insulating layer covering the second edge trace on at least one edge of the surface of the second conductive layer near the vibration layer.

[0034] In a preferred embodiment, step S3 includes: filling the first groove of the vibrating layer with an uncured viscous colloid; aligning and bonding the vibrating layer and the non-vibrating layer using a bonding machine, wherein the microstructure is correspondingly embedded in the first groove and encapsulated by the viscous colloid; then applying a DC bias voltage between the vibrating layer and the non-vibrating layer to remove bubbles, and curing the viscous colloid during the application of the DC bias voltage to achieve bonding between the vibrating layer and the non-vibrating layer; and / or, the viscous colloid is formed by vacuum screen printing or 3D printing; and / or, the DC bias voltage is greater than the DC bias voltage applied to the directional sound-emitting screen during operation, and less than the total voltage applied to the directional sound-emitting screen.

[0035] Compared with the prior art, the present invention has the following beneficial effects:

[0036] 1. This invention uses TGV drilling technology to process grooves and microstructures on ultrathin UTG glass with and without vibration layers. The microstructures are embedded in the grooves to form a stable structure. The microstructures are processed by TGV drilling technology and combined with the grooves on the vibration layer to form a nested structure. The height of the microstructures can be between 30um and 100um, which reduces the processing difficulty and makes it easy to control the processing accuracy, which is within ±1um.

[0037] 2. In this invention, the edge traces are preferably filled into the grooves formed on the UTG. Compared with the existing method of directly processing on the UTG, this method can improve the conductivity of the existing edge traces while further reducing their width, thus achieving an extremely narrow bezel for the directional sound-emitting screen and meeting the market demand for products with extremely narrow bezels.

[0038] 3. This invention fixes the microstructure and the groove with an adhesive colloid, which increases the bonding stability between the vibrating layer and the non-vibrating layer. This ensures that the vibrating layer will not detach from the microstructure during vibration, and the distortion can be reduced to below 10%, thereby improving the overall reliability of the product.

[0039] 4. In this invention, the microstructure is directly integrally molded from UTG and combined with a viscous colloid that eliminates the light and shadow of the groove in the groove, which can be filled in the groove to match the microstructure. This increases the overall visibility of the microstructure and enables visual inspection from the client, resulting in an integrated effect. In addition, since the diameter of the microstructure in this solution can be increased from the traditional 20um to 100um~200um, the structural strength is improved, which greatly enhances the reliability of the product. Attached Figure Description

[0040] Figure 1 is a schematic diagram of the stacked structure of the directional sound-emitting screen of the present invention (before bonding);

[0041] Figure 2 is a schematic diagram of the stacked structure of the directional sound-emitting screen (after bonding) of the present invention;

[0042] Figure 3 is a schematic diagram of the structure in which the third groove is formed on the second UTG substrate layer of the present invention;

[0043] Figure 4 is a schematic diagram of the structure in which the second conductive layer is laid in the third groove of the present invention;

[0044] Figure 5 is a schematic diagram of the structure of the third groove of the present invention, which is filled with silver paste to form the second edge trace and cover the edge insulating layer.

[0045] Figure 6 is a schematic flowchart of the manufacturing process of the directional sound-emitting screen of the present invention.

[0046] The attached figures are labeled as follows:

[0047] 1. Vibration layer; 11. First UTG substrate layer; 12. First conductive layer; 13. First edge trace; 14. First insulating layer; 15. First hardened buffer layer; 16. Optical thin film layer; 17. First groove; 18. Second groove; 2. Non-vibration layer; 21. Second UTG substrate layer; 22. Microstructure; 23. Second conductive layer; 24. Second edge trace; 25. Second hardened buffer layer; 26. Third groove; 27. Edge insulating layer; 3. Air gap. Detailed Implementation

[0048] The specific embodiments of the present invention will be described in detail below, but it should be understood that the scope of protection of the present invention is not limited to the specific embodiments.

[0049] Unless otherwise expressly stated, throughout the specification and claims, the term "comprising" or its variations such as "including" or "comprises" shall be understood to include the stated elements or components without excluding other elements or other components.

[0050] As shown in Figures 1 and 2, the directional sound-emitting screen disclosed in this invention specifically includes a vibrating layer 1 and a non-vibrating layer 2. The frames of the vibrating layer 1 and the non-vibrating layer 2 are attached together, and an air gap 3 is formed between the vibrating layer 1 and the non-vibrating layer 2 to allow the vibrating layer 1 to vibrate up and down. During operation, by applying a voltage signal to the non-vibrating layer 2 and the vibrating layer 1, the vibrating layer 1 is driven to vibrate up and down to emit an ultrasonic signal. The ultrasonic signal is demodulated by the air to produce an audible sound.

[0051] The vibration layer 1 specifically includes a first UTG substrate layer 11, a first conductive layer 12, a first edge trace 13, a first insulating layer 14, a first hardening buffer layer 15, and an optical thin film layer 16. The first UTG substrate layer 11 is specifically made of UTG (ultra-thin flexible glass) material, and its thickness can be 50µm to 100µm. Preferably, multiple first grooves 17 recessed away from the non-vibration layer 2 are formed on the surface of the first UTG substrate layer 11 near the non-vibration layer 2 by TGV (Through Glass Via) etching. The first grooves 17 are non-through holes. In practice, the depth of the first grooves 17 is preferably 20µm to 70µm, and the diameter is preferably 20µm to 100µm. In addition, in order to prevent light shadows and to prevent uneven fabrication of the first conductive layer 12, the edges of the first grooves 17 are preferably sharpened after TGV drilling.

[0052] The first conductive layer 12 is formed on the end face of the first UTG substrate layer 11 near the non-vibrating layer 2 and at least covers the area on the surface of the first UTG substrate layer 11 except for the first groove 17. In practice, the thickness of the first conductive layer 12 is generally less than 100 nm, and the sheet resistance is 70 Ω to 100 Ω. During fabrication, indium tin oxide (ITO) can be deposited using magnetron sputtering to form the first conductive layer 12. Because the edges of the first groove 17 are sharpened, no unevenness is formed during ITO sputtering.

[0053] The first edge trace 13 is formed on at least one edge of the surface of the first conductive layer 12 near the non-vibrating layer 2. In practice, the first edge trace 13 can be formed directly on the edge of the first conductive layer 12, such as by printing metal lines or using silver paste printing by screen printing. In this embodiment, the height of the first edge trace 13 generally needs to be less than or equal to 5um, such as between 1um and 5um. The thicker the trace, the greater the step difference, and the UTG material is prone to breakage. In order to meet the requirements of narrow bezel, its width is generally less than 1mm.

[0054] Alternatively, preferably, a second groove 18 is first formed on at least one edge of the surface of the first UTG substrate layer 11 near the non-vibration layer 2 using TGV drilling technology. The second groove 18 is covered with a first conductive layer 12, and the first edge trace 13 is formed by filling the second groove 18 with metal (such as silver paste). When filled into the second groove 18, the height of the first edge trace 13 is greater than the depth of the second groove 18, and the width of the portion protruding from the groove is also greater than the width of the corresponding groove. In practice, the height of the first edge trace 13 is greater than or equal to 5 μm, and the height of the portion protruding from the second groove 18 is less than or equal to 5 μm and the width is less than 1 mm. Compared to the first embodiment, in this embodiment, because the edge traces are filled into the UTG substrate layer, the height of the first edge trace 13 can be greater than or equal to 5µm, but generally less than or equal to 30µm. Furthermore, the height of the trace protruding from the groove is less than or equal to 5µm, and the width is less than 1mm. This means its total thickness is increased compared to the first embodiment (e.g., from 5µm to 30µm), significantly increasing its conductive area. This improves the conductivity of the existing edge traces while further reducing their width, achieving an extremely narrow bezel for the directional sound-emitting screen, thus meeting market demand for ultra-narrow bezel products. Additionally, the depth of the second groove 18 is designed according to the formula R=ρL / S, where R represents resistance, ρ represents resistivity, L is length, and S is cross-sectional area. In other words, by using a filling process to increase the total thickness of the first edge trace 13, the present invention effectively increases its cross-sectional area S. If S increases from 5µm to 30µm while other parameters remain unchanged, the resistance R will become 1 / 6 of the original resistance. Furthermore, it can be seen from this formula that the height of the first edge trace 13 is not limited to greater than or equal to 5um as defined here, but can also be less than 5um. Its height varies depending on different filling materials and different lengths and other parameters, and the resistance of the first edge trace 13 is preferably less than 6Ω.

[0055] In addition, since a typical display screen is narrow on three sides and wide on one side, when making the first edge trace 13, the wide side can be formed directly on the first UTG substrate layer 11 using traditional printing or mask sputtering processes, while the other three sides are formed using the above-mentioned filling method, which easily creates a narrow bezel.

[0056] The first insulating layer 14 is formed on the surface of the first conductive layer 12 near the non-vibrating layer 2 and covers the first conductive layer 12. In practice, its thickness is preferably 6µm to 15µm. During implementation, since the first insulating layer 14 is a key functional layer, its material performance parameters are extremely demanding. It needs a withstand voltage of over 40kV / mm and minimal microbubbles and impurities to reduce breakdown. Currently, it is preferred to form the layer through coating, exposure and development, or printing followed by VCD vacuum drying to remove bubbles, and then curing. Furthermore, since the first insulating layer 14 is a key material, acting as a dielectric in the parallel plate capacitor, dielectric materials are prone to acoustic polarization in an electric field. Polarization weakens the electric field, resulting in a decrease in the amplitude of the vibrating layer and a drop in the product's sound pressure level. Additionally, since the product operates under high voltage, such as a DC bias voltage of 300-400V and an AC voltage of 150-250V, the material also needs to withstand high voltage, with a dielectric strength higher than 40kV / mm. In one implementation, the material selected has a Tg (temperature resistance) temperature above 200°C, relatively symmetrical molecular chains, and low impurities, ensuring that the product does not exhibit acoustic polarization under a 300V DC bias voltage + 200V AC voltage. High Tg materials have relatively stable molecular chains and high structural strength, making them less prone to deflection and thus polarization. In another implementation, the material is selected with a volume resistivity and surface resistivity between 10⁹ and 10¹¹, and a preferred thickness of 8-12 μm, enabling the product to withstand a 300V DC bias voltage + 200V AC voltage without acoustic polarization, while maintaining a sound pressure level above 70 dB at 1 kHz.

[0057] The first hardened buffer layer 15 is formed on the upper surface of the first UTG substrate layer 11 away from the non-vibration layer 2. In practice, its thickness is generally set to 15µm~25µm. Preferably, the first hardened buffer layer 15 and the first UTG substrate layer 11 do not contain optical bonding adhesive, and the first hardened buffer layer 15 is a single layer, integrally molded. After curing, the surface of the first hardened buffer layer 15 has hardening properties, with a surface hardness of at least 750g 2H and a maximum of 750g 7H. In other alternative embodiments, the first hardened buffer layer 15 can also be made of conventional OCA sheet laminated with a hardened layer such as TPU (thermoplastic polyurethane rubber), PET (polyethylene terephthalate), or CPI (transparent polyimide film). Furthermore, to reduce stress unevenness during magnetron sputtering of ITO, it is preferable to first perform magnetron sputtering and annealing of the ITO, and then form the first hardened buffer layer 15.

[0058] The optical thin film layer 16 is formed on the upper surface of the first hardened buffer layer 15 away from the non-vibration layer 2. In practice, the optical thin film layer 16 is specifically an anti-glare (AG) / anti-reflection (AR) and anti-fingerprint (AF) layer. Its thickness is related to the process, such as being set to 1µm~5µm, generally around 1µm. Depending on customer needs, if there is a folding requirement, the lower the thickness of the optical thin film layer 16, the better the folding performance.

[0059] The non-vibration layer 2 specifically includes a second UTG substrate layer 21, multiple microstructures 22, a second conductive layer 23, a second edge trace 24, and a second hardening buffer layer 25. In practice, similar to the first UTG substrate layer 11, the second UTG substrate layer 21 also uses UTG material, and its thickness is generally above 30 μm. Preferably, the grooves (non-through-hole grooves) on the surface of the second UTG substrate layer 21 near the vibration layer 1, except for the area of ​​the microstructures 22, are etched away using the TGV (Through Glass Vias) process. The portion outside the grooves forms multiple microstructures 22. That is, the microstructures 22 are integrally formed on the second UTG substrate layer 21 using the TGV process. In other words, the microstructures 22 are also made of ultra-thin flexible glass material, and their refractive index is consistent with the refractive index of the UTG substrate layers of the vibration layer 1 and the non-vibration layer 2. From the client's visual inspection, an integrated effect will be formed. Due to the increased overall visibility of the microstructure 22, its diameter can be increased from the traditional 20µm to 100µm~200µm, thereby improving structural strength, reducing pressure on the structural support surface, and significantly enhancing reliability. In practice, the height of the microstructure 22 is 30µm~100µm, its diameter is 100µm~200µm, and the center-to-center distance between two adjacent microstructures 22 is 3mm~3.2mm.

[0060] Furthermore, as shown in Figures 3-5, in order to fill and form the second edge trace 24, a third groove 26 is also formed on at least one edge of the second UTG substrate layer 21 near the surface of the vibration layer 1 by etching using a TGV process. Similarly, it is preferable to sharpen the edges of the third groove 26 to prevent right-angle corners from causing visual shadows.

[0061] The second conductive layer 23 is formed on the end face of the second UTG substrate layer 21 near the vibrating layer 1 and at least covers the area on the surface of the second UTG substrate layer 21 except for the microstructure 22. In specific implementations, similar to the first conductive layer 12, the thickness of the second conductive layer 23 is generally less than 100 nm, and the sheet resistance is 70 Ω to 100 Ω. Furthermore, during fabrication, indium tin oxide (ITO) can also be deposited using magnetron sputtering to form the second conductive layer 23. In addition, to prevent ITO magnetron sputtering onto the top and sides of the microstructure 22, when magnetron sputtering is required, a MARSK process is performed, and ITO magnetron sputtering is performed locally. Since the corners of the third groove 26 have undergone sharpening etching or micro-grinding, the ITO is continuous inside and outside the third groove 26, which can fully ensure the maximum overlap area between the second edge trace 24 and ITO, thereby reducing the overall load resistance of the device, reducing the device load power, and ensuring maximum efficiency.

[0062] The second edge trace 24 is formed on at least one edge of the surface of the second conductive layer 23 near the vibrating layer 1, corresponding to the first edge trace 13. In practice, the second edge trace 24 can be formed directly on the edge of the second conductive layer 23. Alternatively, preferably, the second edge trace 24 is formed by filling the third groove 26 covering the second conductive layer 23 with metal (such as silver paste). The structure and processing technology of the second edge trace 24 can be referred to the description of the first edge trace 13 above, and will not be described here.

[0063] Additionally, alternatively, at least one edge insulating layer 27 covering the second edge trace 24 is provided on at least one edge of the second conductive layer 23 near the surface of the vibrating layer 1. In practice, the thickness of the edge insulating layer 27 is less than or equal to 5 μm, and its width is slightly larger than the width of the second edge trace 24, so as to completely cover the second edge trace 24. Of course, an additional edge insulating layer 27 can be provided on the second edge trace 24, or, like the vibrating layer 1, the entire surface of the second conductive layer 23 can be covered with an insulating layer (not shown). The present invention does not limit this, as long as reliable insulation and isolation can be achieved between the conductive layer of the vibrating layer 1 and the conductive layer of the non-vibrating layer 2.

[0064] The second hardened buffer layer 25 is formed on the lower end surface of the second UTG substrate layer 21 away from the vibration layer 1, and mainly serves a protective function. In practice, its thickness is generally set to 2µm~4µm. The structure and processing technology of the second hardened buffer layer 25 can be referred to the description of the first hardened buffer layer 15 above, and will not be described here.

[0065] The edges of the vibrating layer 1 and the non-vibrating layer 2 are attached, and the microstructure 22 on the non-vibrating layer 2 is embedded in the groove on the vibrating layer 1. That is, the microstructure 22 on the non-vibrating layer 2 and the first groove 17 on the vibrating layer 1 are nested. The microstructure 22 is partially nested in the first groove 17, forming a stable structure. This ensures that the vibrating layer 1 will not detach from the microstructure 22 during vibration, reducing distortion to below 10% and ensuring stability. In addition, since the height of the microstructure 22 is greater than the depth of the first groove 17, an air gap 3 can be formed between the vibrating layer 1 and the non-vibrating layer 2 through the microstructure 22 to allow the vibrating layer 1 to vibrate vertically. The height of the air gap 3 is the difference between the height of the microstructure 22 and the depth of the first groove 17 and the thickness of the second conductive layer 23. Furthermore, more preferably, the microstructure 22 is also embedded and fixed in the first groove 17 of the vibrating layer 1 by an adhesive, further increasing the nesting stability between the microstructure 22 and the first groove 17. In practice, before the microstructure 22 of the non-vibrating layer 2 is nested in the first groove 17 of the vibrating layer 1, a certain height of viscous, incompletely cured adhesive is screen-printed into the first groove 17 using vacuum screen printing. After the first groove 17 of the vibrating layer 1 and the microstructure 22 are nested and bonded together, the photocured adhesive ensures that the microstructure 22 is firmly nested in the first groove 17 of the vibrating layer 1. This invention uses an adhesive to encapsulate the microstructure 22 in a ring-wall manner. Compared to traditional bonding methods, such as 3D printing an adhesive layer on top of the microstructure 22 with a small bonding area, this ring-wall adhesive provides a larger bonding area, improving the overall reliability of the product.

[0066] In one specific embodiment, the thickness of the first UTG substrate layer 11 of the vibrating layer 1 is 50 μm, the depth of the first groove 17 is 20 μm, the thickness of the first insulating layer 14 is 10 μm, the thickness of the first hardened buffer layer 15 is 25 μm, the thickness of the optical thin film layer 16 is 1 μm, the thickness of the second UTG substrate layer 21 is 30 μm, the height of the microstructure 22 is 39 μm, the thickness of the first conductive layer 12 and the second conductive layer 23 are both 50 nm to 70 nm, the sheet resistance is both 70 Ω to 100 Ω, the center distance between two adjacent microstructures 22 is 3 mm to 3.2 mm, and the thickness of the second hardened buffer layer 25 is 4 μm. Under the action of a 300V DC bias voltage + 200V AC voltage, its 1kHz sound pressure level can reach 72 dB to 75 dB, and the product area is 12 to 16 inches.

[0067] In practice, the TGV process can be implemented in various ways. For example, the relatively mature laser-induced etching method can be used. This process does not rely solely on chemical etching and can achieve an accuracy of ±1µm. In contrast, existing microstructure etching relies entirely on controlling the etching depth by adjusting the chemical concentration and immersion time, with an accuracy of at most ±10µm. Therefore, compared to traditional etching processes, the microstructures of this invention are processed using TGV drilling technology, which reduces the processing difficulty and makes it easier to control the processing accuracy.

[0068] The present invention also discloses a display device (not shown in the figure) including the above-mentioned directional sound-emitting screen. The directional sound-emitting screen can be combined with the display screen to realize directional sound emission from the screen. When combined, it can be directly pasted on the display surface of the display screen or integrated into the display screen. The present invention does not limit this.

[0069] Referring to Figure 6, this invention also discloses a manufacturing process for a directional sound-emitting screen, which mainly includes the following steps:

[0070] S1, preparing the vibration layer 1, wherein S1 includes:

[0071] S11, a plurality of first grooves 17 are formed on the surface of the first UTG substrate layer 11 near the non-vibration layer 2 by TGV etching. These grooves are recessed in the direction away from the non-vibration layer.

[0072] Preferably, the edges of the first groove 17 are also sharpened in this step.

[0073] S12, a first conductive layer 12 is formed on the surface of the first UTG substrate layer 11 near the non-vibration layer 2, and the first conductive layer 12 covers at least the area on the surface of the first UTG substrate layer 11 other than the first groove 17.

[0074] Preferably, the first conductive layer 12 is formed by magnetron sputtering in this step.

[0075] S13, a first insulating layer 14 is formed on the surface of the first conductive layer 12 near the non-vibrating layer 2, covering the first conductive layer 12.

[0076] Between S12 and S13, a first hardened buffer layer 15 is formed on the upper surface of the first UTG substrate layer 11 away from the non-vibrating layer 2. Preferably, the first hardened buffer layer 15 is formed after the first conductive layer 12 is magnetron sputtered and annealed. Additionally, an optical thin film layer 16 is formed on the upper surface of the first hardened buffer layer 15 away from the non-vibrating layer 2. A first edge trace 13 is formed on at least one edge of the surface of the first conductive layer 12 near the non-vibrating layer 2.

[0077] The structure and fabrication process of the first UTG substrate layer 11, the first conductive layer 12, the first edge trace 13, the first insulating layer 14, the first hardened buffer layer 15, and the optical thin film layer 16 in the vibration layer 1 can be referred to the description in the above-mentioned directional sound-emitting screen, and will not be repeated here.

[0078] S2, preparing the non-vibrational layer 2, wherein S2 includes:

[0079] S21, a microstructure 22 is integrally formed on the surface of the second UTG substrate layer 21 near the vibration layer 1 by TGV process. The microstructure 22 is a protruding structure that protrudes towards the vibration layer 1 and its height is greater than the depth of the first groove 17.

[0080] S22, a second conductive layer 23 is formed on the surface of the second UTG substrate layer 21 near the vibration layer 1. The second conductive layer 23 covers at least the area on the surface of the second UTG substrate layer 21 other than the microstructure 22.

[0081] Additionally, S2 may include: S23, forming a second hardened buffer layer 25 on the lower end surface of the second UTG substrate layer 21 away from the vibration layer 1. In practice, the second hardened buffer layer 25 can be integrally formed by printing or coating processes, and preferably, the second hardened buffer layer 25 is formed after the second conductive layer 23 is magnetron sputtered and annealed.

[0082] In addition, between S22 and S23, a second edge trace 24 is formed on at least one edge of the surface of the second conductive layer 23 near the surface of the vibration layer 1.

[0083] The structure and fabrication process of the second UTG substrate layer 21, multiple microstructures 22, second conductive layer 23, second edge trace 24 and second hardened buffer layer 25 of the non-vibration layer 2 can be referred to the description in the above directional sound screen, and will not be repeated here.

[0084] S3, the frames of the vibrating layer 1 and the non-vibrating layer 2 are attached together. After attachment, the microstructure 22 on the non-vibrating layer 2 is embedded in the first groove 17 on the vibrating layer 1, and an air gap 3 is formed between the vibrating layer 1 and the non-vibrating layer 2 through the microstructure 22 to allow the vibrating layer 1 to vibrate up and down.

[0085] Specifically, S3 includes: filling the first groove 17 of the vibrating layer 1 with an uncured viscous colloid (such as using a Prime adhesive layer, not shown); aligning and bonding the vibrating layer 1 and the non-vibrating layer 2 using a bonding machine (not shown), with the microstructure 22 correspondingly embedded in the first groove 17 and encapsulated by the viscous colloid; then applying a DC bias voltage between the vibrating layer 1 and the non-vibrating layer 2 to remove bubbles, and curing the viscous colloid during the DC bias voltage application process (such as UV curing), allowing the viscous colloid to fully bond and cure with the microstructure 22; then filling the frame with colloid and sealing it to achieve bonding between the vibrating layer 1 and the non-vibrating layer 2; finally, removing the voltage to complete the molding. In practice, the viscous colloid can be formed by vacuum screen printing or 3D printing; and / or, the aforementioned DC bias voltage is greater than the DC bias voltage applied to the directional sound-emitting screen during operation, and less than the total voltage applied to the directional sound-emitting screen. If the starting voltage is 300V DC bias voltage plus 200V AC voltage, the bubble removal voltage can be set to 300V to 400V DC voltage. The advantage is that it ensures that the air sealed between the vibrating layer 1 and the non-vibrating layer 2 will not cause internal bubbling due to the difference in internal and external pressure.

[0086] The advantages of this invention are as follows: 1. This invention uses TGV drilling technology to process grooves and microstructures on the ultra-thin UTG (Ultra-Thin Glass) of the vibrating and non-vibrating layers, respectively. The microstructures are embedded in the grooves to form a stable structure. The microstructures are processed using TGV drilling technology to form a nested structure with the grooves on the vibrating layer. The height of the microstructures can be between 30um and 100um, reducing the processing difficulty and making it easy to control the processing accuracy, which is within ±1um. 2. This invention preferably fills the edge traces into the grooves formed on the UTG. Compared with the existing direct processing on the UTG, this improves the conductivity of the existing edge traces while further reducing their width, achieving an extremely narrow bezel for the directional sound-emitting screen, thus meeting the market demand for products with extremely narrow bezels. 3. This invention fixes the microstructures and grooves with an adhesive, increasing the bonding stability between the vibrating and non-vibrating layers. This ensures that the vibrating layer will not detach from the microstructure during vibration, reducing distortion to below 10%, thereby improving the overall reliability of the product. 4. In this invention, the microstructure is directly integrally molded from UTG and combined with a viscous colloid that eliminates the light and shadow of the groove in the groove, which can be filled in the groove to match the microstructure. This increases the overall visibility of the microstructure and enables visual inspection from the client, resulting in an integrated effect. In addition, since the diameter of the microstructure in this solution can be increased from the traditional 20um to 100um~200um, the structural strength is improved, which greatly enhances the reliability of the product.

[0087] The foregoing description of specific exemplary embodiments of the invention is for illustrative and explanatory purposes. These descriptions are not intended to limit the invention to the precise forms disclosed, and it will be apparent that many changes and variations can be made in accordance with the foregoing teachings. The exemplary embodiments were chosen and described in order to explain the specific principles of the invention and its practical application, thereby enabling those skilled in the art to implement and utilize various different exemplary embodiments of the invention, as well as various different choices and variations. The scope of the invention is intended to be defined by the claims and their equivalents.

Claims

1. A directional sound-emitting screen, characterized in that, include: The vibration layer includes a first UTG substrate layer, a first conductive layer, and a first insulating layer. The first UTG substrate layer has a plurality of first grooves recessed in the direction away from the non-vibration layer formed by TGV etching on the surface of the first UTG substrate layer near the non-vibration layer. The first conductive layer is formed on the surface of the first UTG substrate layer near the non-vibration layer and at least covers the area on the surface of the first UTG substrate layer except for the first grooves. The first insulating layer is formed on the surface of the first conductive layer near the non-vibration layer and covers the first conductive layer. The non-vibration layer includes a second UTG substrate layer, multiple microstructures, and a second conductive layer. The microstructures are integrally formed on the surface of the second UTG substrate layer near the vibration layer using a TGV process. The microstructures are protrusions that protrude towards the vibration layer and their height is greater than the depth of the first groove. The second conductive layer is formed on the surface of the second UTG substrate layer near the vibration layer and at least covers the area on the surface of the second UTG substrate layer other than the microstructures. The vibrating layer is attached to the frame of the non-vibrating layer, and the microstructure on the non-vibrating layer is embedded in the first groove on the vibrating layer. An air gap is formed between the vibrating layer and the non-vibrating layer through the microstructure to allow the vibrating layer to vibrate up and down.

2. The directional sound-emitting screen as described in claim 1, characterized in that, The vibration layer further includes a first edge trace, which is directly formed on at least one edge of the surface of the first conductive layer near the non-vibration layer; or, a second groove is formed on at least one edge of the surface of the first UTG substrate layer near the non-vibration layer, the second groove is covered with the first conductive layer, and the first edge trace is formed by filling the second groove with metal. And / or, the non-vibration layer further includes a second edge trace, the second edge trace being directly formed on at least one edge of the surface of the second conductive layer near the vibration layer, or, a third groove is formed on at least one edge of the surface of the second UTG substrate layer near the vibration layer, the third groove being covered by the second conductive layer, and the third groove being filled with metal to form the second edge trace; Alternatively, the non-vibrating layer may further include a second edge trace and an edge insulating layer, wherein the second edge trace is directly formed on at least one edge of the surface of the second conductive layer near the vibrating layer; or, a third groove is formed on at least one edge of the surface of the second UTG substrate layer near the vibrating layer, the third groove is covered with the second conductive layer, and the third groove is filled with metal to form the second edge trace, wherein the edge insulating layer is formed on at least one edge of the surface of the second conductive layer near the vibrating layer and covers the second edge trace.

3. A directional sound-emitting screen as described in claim 2, characterized in that, When formed directly on the edge of the corresponding conductive layer, the height of the first edge trace and the second edge trace is less than or equal to 5 μm and the width is less than 1 mm; when filled in the groove, the height of the first edge trace and the second edge trace are both greater than the depth of their respective grooves, and the width of the portion protruding from the groove is also greater than the width of their respective grooves. And / or, when filled into the groove, the height of the first edge trace and the second edge trace is greater than or equal to 5 μm, and the width of the portion of the trace extending above the groove is less than 1 mm. And / or, the thickness of the edge insulating layer is less than or equal to 5 μm, and the width is greater than the width of the second edge trace; And / or, the second and third grooves are also formed by TGV etching.

4. A directional sound-emitting screen as described in claim 1, characterized in that, The microstructure is also embedded and fixed in the first groove of the vibration layer by an adhesive; and / or, the adhesive is disposed in the first groove; and / or, the microstructure is embedded in the first groove and encapsulated by the adhesive before the adhesive is cured, and the adhesive is cured after embedding.

5. A directional sound-emitting screen as described in claim 1, characterized in that, The vibration layer further includes a first hardened buffer layer and an optical thin film layer. The first hardened buffer layer is formed on the upper surface of the first UTG substrate layer away from the non-vibration layer, and the optical thin film layer is formed on the upper surface of the first hardened buffer layer away from the non-vibration layer. And / or, the non-vibration layer further includes a second hardened buffer layer, which is formed on the lower end face of the second UTG substrate layer away from the vibration layer.

6. A directional sound-emitting screen as described in claim 5, characterized in that, The thickness of the first hardened buffer layer is 15um to 25um, and / or the thickness of the optical thin film layer is 1um to 5um; and / or the thickness of the second hardened buffer layer is 2um to 4um.

7. A directional sound-emitting screen as described in claim 2, characterized in that, The thickness of the first UTG substrate layer is 50µm to 100µm, and / or the depth of the first groove is 20µm to 70µm and the diameter is 20µm to 100µm, and / or the thickness of the first conductive layer is less than 100nm and the sheet resistance is 70Ω to 100Ω, and / or the thickness of the first insulating layer is 6µm to 15µm, and / or the thickness of the second UTG substrate layer is more than 30µm, and / or the height of the microstructure is 30µm to 100µm and the diameter is 100µm to 200µm, the center distance between two adjacent microstructures is 3mm to 3.2mm, and / or the thickness of the second conductive layer is less than 100nm and the sheet resistance is 70Ω to 100Ω, and / or the height of the air gap is 5µm to 15µm.

8. A display device, characterized in that, The display device includes the directional sound-emitting screen as described in any one of claims 1 to 7.

9. A manufacturing process for a directional sound-emitting screen, characterized in that, The process includes: S1, preparing the vibration layer, wherein S1 includes: S11, a plurality of first grooves are formed on the surface of the first UTG substrate layer near the non-vibrating layer by TGV etching. S12, a first conductive layer is formed on the surface of the first UTG substrate layer near the non-vibrating layer, and the first conductive layer at least covers the area on the surface of the first UTG substrate layer other than the first groove. S13, A first insulating layer covering the first conductive layer is formed on the surface of the first conductive layer near the non-vibrating layer. S2, preparing a non-vibrational layer, wherein S2 includes: S21, a microstructure is integrally formed on the surface of the second UTG substrate layer near the vibration layer using the TGV process. The microstructure is a protruding structure that protrudes towards the vibration layer and its height is greater than the depth of the first groove. S22, a second conductive layer is formed on the surface of the second UTG substrate layer near the vibrating layer, the second conductive layer at least covering the area on the surface of the second UTG substrate layer other than the microstructure; S3, the frames of the vibrating layer and the non-vibrating layer are attached together. After attachment, the microstructure on the non-vibrating layer is embedded in the first groove on the vibrating layer, and an air gap is formed between the vibrating layer and the non-vibrating layer through the microstructure to allow the vibrating layer to vibrate up and down.

10. The manufacturing process of a directional sound-emitting screen as described in claim 9, characterized in that, In step S11, the edge of the first groove is further sharpened; and / or, in step S12, the first conductive layer is formed by magnetron sputtering; and / or, between steps S12 and S13, a first hardening buffer layer is formed on the upper surface of the first UTG substrate layer away from the non-vibration layer; and / or, the first hardening buffer layer is formed after magnetron sputtering and annealing of the first conductive layer; and / or, the first hardening buffer layer is integrally formed by printing or coating; and / or, between steps S12 and S13, an optical thin film layer is formed on the upper surface of the first hardening buffer layer away from the non-vibration layer; and / or, in steps S12 and S13... The method further includes forming a first edge trace on at least one edge of the surface of the first conductive layer near the non-vibrating layer; and / or, the first edge trace is directly formed on at least one edge of the surface of the first conductive layer near the non-vibrating layer, or, a second groove is formed on at least one edge of the surface of the first UTG substrate layer near the non-vibrating layer, the second groove is covered with the first conductive layer, and the first edge trace is formed by filling the second groove with metal; and / or, the first insulating layer is formed by coating, exposure development, or printing processes; and / or, the second groove is also formed by etching using a TGV process; and / or, the edges of the second groove are also sharpened.

11. The manufacturing process of a directional sound-emitting screen as described in claim 9, characterized in that, S2 further includes: S23, forming a second hardened buffer layer on the lower end face of the second UTG substrate layer away from the vibration layer; and / or, the second hardened buffer layer is formed after magnetron sputtering and annealing of the second conductive layer; and / or, the second hardened buffer layer is integrally formed by printing or coating processes; and / or, between S22 and S23, forming a second edge trace on at least one edge of the surface of the second conductive layer near the vibration layer; and / or, the second edge trace is directly formed on at least one edge of the surface of the second conductive layer near the vibration layer, or, a third groove is formed on at least one edge of the surface of the second UTG substrate layer near the vibration layer, the third groove is covered with the second conductive layer, and the third groove is filled with metal to form the second edge trace; and / or, the third groove is also formed by TGV etching; and / or, the edge of the third groove is also sharpened; and / or, S2 further includes forming an edge insulating layer covering the second edge trace on at least one edge of the surface of the second conductive layer near the vibration layer.

12. The manufacturing process of a directional sound-emitting screen as described in claim 9, characterized in that, S3 includes: filling the first groove of the vibrating layer with an uncured viscous colloid; aligning and bonding the vibrating layer and the non-vibrating layer using a bonding machine, wherein the microstructure is correspondingly embedded in the first groove and encapsulated by the viscous colloid; then applying a DC bias voltage between the vibrating layer and the non-vibrating layer to remove bubbles, and curing the viscous colloid during the application of the DC bias voltage to achieve bonding between the vibrating layer and the non-vibrating layer; and / or, the viscous colloid is formed by vacuum screen printing or 3D printing; and / or, the DC bias voltage is greater than the DC bias voltage applied to the directional sound-emitting screen during operation, and less than the total voltage applied to the directional sound-emitting screen.

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