Radio frequency front-end module heat dissipation optimization method and system, and related device
By performing thermal performance analysis and adjusting transistor spacing on the layout of the RF front-end module, the heat dissipation problem of the RF front-end module during high-power operation was solved, achieving temperature balance and performance improvement.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- LANSUS TECH INC
- Filing Date
- 2025-12-30
- Publication Date
- 2026-07-09
AI Technical Summary
The heat dissipation problem of existing RF front-end modules has not been effectively solved when operating at high power, resulting in uneven temperature and affecting module performance.
Thermal performance analysis was performed on the power amplifier layout to divide temperature zones and adjust the spacing between transistors, especially increasing the spacing between transistors in high-temperature zones and decreasing the spacing between transistors in low-temperature zones. Modifications to the substrate metal were also made to optimize heat dissipation.
Temperature balance of the RF front-end module was achieved, heat generation was reduced, and RF performance was improved.
Smart Images
Figure CN2025146993_09072026_PF_FP_ABST
Abstract
Description
RF front-end module heat dissipation optimization methods, systems and related equipment Technical Field
[0001] This invention relates to the field of radio frequency chip design technology, and in particular to a method, system and related equipment for optimizing the heat dissipation of radio frequency front-end modules. Background Technology
[0002] The existing structure of mobile phone radio frequency front-end module is shown in Figure 1. Radio frequency front-end module generally includes components such as low noise amplifier (LNA), power amplifier (PA), filter, switch, and antenna. Among them, the power amplifier is a very important module of radio frequency front-end, which is used to amplify the output signal, and finally the amplified signal is emitted by the antenna.
[0003] Due to the rapid development of technology, the wireless communication technology of smart devices is also iterating rapidly. For 5G wireless communication systems, the key module of its radio frequency (RF) front-end is the RF power amplifier (RF power amplifier) located at the end of the transmitter stage. The RF power amplifier directly affects and determines various performance indicators of the transmitter system, such as output power, efficiency, gain, linearity, operating bandwidth, and reflection coefficient, thus affecting and determining the overall performance indicators of the 5G wireless communication system. To achieve fast data transmission, 5G communication signals have higher frequencies. Based on the principle that the speed of light equals wavelength multiplied by frequency, the wavelength of 5G signals is much shorter than that of 4G and 3G signals. Therefore, if 5G signals are to cover a larger area, more base stations are needed for transmitting or receiving 5G signals, or the transmission power of 5G signals needs to be increased to maintain a longer transmission distance.
[0004] However, for highly integrated mobile phone RF front-end modules, higher power output from the power amplifier means higher power consumption and current, which objectively leads to greater heat generation in the RF front-end module. Excessive temperature can have a significant negative impact on the performance of various components and integrated chips within the module. With the iterative development of technology, the development of high-output-power modules and chips is imperative; therefore, heat dissipation optimization is a crucial challenge in the chip development process. Summary of the Invention
[0005] This invention provides a method, system, and related equipment for optimizing the heat dissipation of radio frequency front-end modules, aiming to solve the heat generation problem of power amplifiers in existing radio frequency front-end modules at high power.
[0006] To address the aforementioned technical problems, in a first aspect, the present invention provides a method for optimizing the heat dissipation of an RF front-end module, the method comprising the following steps:
[0007] S101. Obtain the layout of the power amplifier in the RF front-end module;
[0008] S102. Based on the thermal performance of the power amplifier, the layout is continuously divided into multiple temperature zones;
[0009] S103. Obtain the original spacing between the transistors in the power amplifier;
[0010] S104. Based on the original spacing, re-obtain the optimized spacing between transistors in each different temperature region;
[0011] S105. Based on the optimized transistor spacing, the transistors of the power amplifier are rearranged to obtain an optimized layout.
[0012] S106. Obtain the optimized heat dissipation RF front-end module according to the optimized layout.
[0013] Furthermore, in step S102, based on the thermal performance of the power amplifier, the layout is divided into a high-temperature region and two low-temperature regions located on either side of the high-temperature region.
[0014] Furthermore, the high-temperature region is defined with the transistor with the highest temperature in the layout as the center.
[0015] Furthermore, in step S104, the original spacing is defined as d0. When the first transistor optimized spacing d1 between transistors in the low-temperature region is re-acquired, d0>d1 is made; when the second transistor optimized spacing d2 between transistors in the high-temperature region is re-acquired, d2>d0 is made.
[0016] Furthermore, let m and n be the number of transistors contained in the two low-temperature regions, respectively, and w be the number of transistors contained in the high-temperature region, where w ≥ 3. Then, in step S104:
[0017] The total length of the reduced spacing in the low-temperature region is obtained as l1 = (m + n - 2) × (d0 – d1), which is equal to the total length of the increased spacing in the high-temperature region.
[0018] The increased basic spacing between adjacent transistors in the high-temperature region is obtained as l2 = l1 / ((w-1)×w);
[0019] The transistor with the highest temperature in the high-temperature region is identified, and the spacing between each adjacent transistor from this transistor to the outermost transistor in the high-temperature region is respectively: d1+(w-1)×l2, d1+(w-2)×l2, ..., d1+l2.
[0020] Furthermore, in step S102, based on the thermal performance of the power amplifier, the layout is divided into multiple working areas according to the differential structure of the power amplifier, and the temperature region is divided for each working area.
[0021] Furthermore, after step S105, the RF front-end module heat dissipation optimization method further includes:
[0022] Based on the optimized layout, the substrate metal of the transistors of different power amplifiers is modified so that the substrate metal of different transistors are bonded together and grounded uniformly.
[0023] Secondly, the present invention also provides a radio frequency front-end module heat dissipation optimization system, comprising:
[0024] The layout acquisition module is used to acquire the layout of the power amplifier in the RF front-end module;
[0025] A partitioning module is used to continuously divide the layout into multiple temperature zones based on the thermal performance of the power amplifier.
[0026] A spacing analysis module is used to obtain the original spacing between transistors in the power amplifier;
[0027] The layout optimization module is used to re-obtain the optimized transistor spacing between transistors in each different temperature region based on the original spacing.
[0028] The relayout module is used to relayout the transistors of the power amplifier according to the optimized transistor spacing to obtain an optimized layout.
[0029] The module optimization module is used to obtain an optimized RF front-end module with improved heat dissipation based on the optimized layout.
[0030] Furthermore, based on the thermal performance of the power amplifier, the partitioning module divides the layout into a high-temperature region and two low-temperature regions located on either side of the high-temperature region;
[0031] Based on the thermal performance of the power amplifier, the layout is divided into multiple working areas according to the differential structure of the power amplifier, and the temperature range is divided for each working area.
[0032] Thirdly, the present invention also provides a computer device, including: a memory, a processor, and a radio frequency front-end module heat dissipation optimization program stored in the memory and executable on the processor, wherein when the processor executes the radio frequency front-end module heat dissipation optimization program, it implements the steps in the radio frequency front-end module heat dissipation optimization method as described in any of the above embodiments.
[0033] Fourthly, the present invention also provides a computer-readable storage medium storing a radio frequency front-end module heat dissipation optimization program, wherein when the radio frequency front-end module heat dissipation optimization program is executed by a processor, the steps of the radio frequency front-end module heat dissipation optimization method as described in any of the above embodiments are implemented.
[0034] The beneficial effect achieved by this invention lies in proposing a method for optimizing the heat dissipation of radio frequency front-end modules based on transistor layout. This method analyzes the thermal performance of the power amplifier in the module to identify the heat-generating areas, and adjusts the layout of the transistors in the power amplifier to increase the spacing between transistors that generate significant heat, and to make the temperature performance of transistors in different areas of the final stage of the power amplifier more balanced, thereby reducing the heat generation of the radio frequency front-end module and improving its radio frequency performance. Attached Figure Description
[0035] Figure 1 is a schematic diagram of the structure of a mobile phone radio frequency front-end module in the prior art;
[0036] Figure 2 is a flowchart of the steps of the radio frequency front-end module heat dissipation optimization method provided in the embodiment of the present invention;
[0037] Figure 3 is a schematic diagram of the multi-stage power amplifier structure of the radio frequency front-end module in the radio frequency front-end module heat dissipation optimization method provided in the embodiment of the present invention.
[0038] Figure 4 is a schematic diagram of the original power amplifier layout in the RF front-end module heat dissipation optimization method provided in the embodiment of the present invention.
[0039] Figure 5 is a schematic diagram of the original power amplifier transistor spacing in the RF front-end module heat dissipation optimization method provided in the embodiment of the present invention.
[0040] Figure 6 is a schematic diagram of the thermal performance analysis of the original power amplifier in the RF front-end module heat dissipation optimization method provided in the embodiment of the present invention.
[0041] Figure 7 is a schematic diagram of the power amplifier transistor spacing in the RF front-end module heat dissipation optimization method provided in the embodiment of the present invention.
[0042] Figure 8 is a schematic diagram of the layout of the heat dissipation optimization power amplifier in the RF front-end module heat dissipation optimization method provided in the embodiment of the present invention.
[0043] Figure 9 is a schematic diagram of the thermal performance analysis of the power amplifier in the RF front-end module thermal optimization method provided in the embodiment of the present invention.
[0044] Figure 10 is a schematic diagram of the thermal optimization system for the radio frequency front-end module provided in an embodiment of the present invention;
[0045] Figure 11 is a schematic diagram of the structure of the computer device provided in an embodiment of the present invention. Detailed Implementation
[0046] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.
[0047] Please refer to Figure 2, which is a flowchart of the steps of the RF front-end module heat dissipation optimization method provided in an embodiment of the present invention. The RF front-end module heat dissipation optimization method includes the following steps:
[0048] S101. Obtain the layout of the power amplifier in the RF front-end module.
[0049] In related technologies, the power amplifier of the RF front-end module has a multi-stage interconnected structure. For example, in the RF front-end module used for 5G signal transmission, it is generally a two-stage or three-stage amplification structure, as shown in Figure 3. Generally, in a multi-stage amplification structure, the front stage is the driver stage, which is used to amplify the small signal at the input end to a sufficiently large amplitude to drive the power stage; the final stage is the power stage, which is used to further amplify the signal provided by the driver stage to generate sufficient power to drive the load (such as transmitting 5G signals through the output end). In the multi-stage amplification structure, the power stage amplifier has more transistors and consumes more power than transistors in other structures, thus generating more heat. Therefore, for the entire RF front-end module, the power stage of the power amplifier has the greatest impact on its performance, and its heat dissipation optimization is the most critical. In this embodiment of the invention, heat dissipation optimization of the final stage of the power amplifier is used as an example for explanation.
[0050] The layout described in this embodiment of the invention specifically refers to the layout of the power amplifier substrate. A raw power amplifier layout that has not been optimized by the RF front-end module heat dissipation optimization method provided in this embodiment of the invention is shown in Figure 4. The power amplifier substrate can be mainly divided into a substrate soldering metal, chip pins and chip outer frame. Due to the common application structure of power amplifiers, each transistor is generally connected in parallel using multiple transistors. When each transistor is soldered to the substrate, there will be a certain spacing.
[0051] Figure 5 illustrates the spacing between transistors in a power amplifier in an abstract form. Figure 5A shows a layout where transistors are closely packed together. In this layout, there isn't enough space between the transistors to dissipate heat, leading to heat buildup and affecting performance. Figure 5B shows a layout where transistors are arranged at equal intervals, which is closer to the layout shown in Figure 4. Compared to Figure 5A, this layout provides some space for heat dissipation. However, even with the transistor layout shown in Figure 5, different transistors will have different sizes, power ratings, and heat generation. Objectively speaking, larger transistors generate more heat than smaller transistors. Therefore, the transistor layout shown in Figure 5 can also lead to heat accumulation in some areas.
[0052] S102. Based on the thermal performance of the power amplifier, the layout is continuously divided into multiple temperature zones.
[0053] In this embodiment of the invention, temperature zones are mainly divided by performing thermal performance analysis on the power amplifier. Specifically, please refer to Figure 6, which is a schematic diagram of the results of thermal performance analysis on the layout shown in Figure 4 provided by this embodiment of the invention. Figure 6 is generally divided into two wave shapes, which correspond to the front and rear ends of the final stage power amplifier, respectively. Different peaks correspond to the heating conditions of different transistors. Taking the wave shape on the left as an example, it can be seen that some transistors in the layout generate more heat than other transistors. Combining the wave shapes on the left and right sides, under high power, the highest temperature of the transistor on the left side of the final stage has reached 120°C, and the lowest temperature of the transistor on the left side of the final stage is 100°C; the highest temperature of the transistor on the right side of the final stage has reached 110°C, and the lowest temperature of the transistor on the left side of the final stage is 90°C. The uneven temperature distribution of the transistors on the left and right sides indirectly leads to uneven power distribution of the transistors on the same side. Therefore, the power amplifier layout shown in Figure 4 will cause some transistors to operate in the amplification region and some transistors to operate in the saturation region. The transistors operating in the saturation region have poor performance, which will lead to the overall performance degradation. At the same time, there is a thermal imbalance between the front and back ends of the power amplifier. The average temperature of the transistors on the left side of the final stage is about 10° higher than that on the right side. This will cause the power on the left and right sides to be inconsistent. In a differential structure, if the power on the left and right sides is different, the performance will be degraded accordingly during power combining. The greater the difference, the greater the degree of degradation.
[0054] In step S102, based on the thermal performance of the power amplifier, the layout is divided into a high-temperature region and two low-temperature regions located on either side of the high-temperature region. The high-temperature region is centered on the transistor with the highest temperature in the layout.
[0055] Specifically, please refer to Figure 6. The peaks in Figure 6 represent the heat generation of a certain transistor. According to its thermal performance analysis, it is clear that the heat generation in the power amplifier gradually decreases outward from a certain transistor. In this embodiment of the invention, the transistor with the highest temperature in the layout is taken as the center, and a certain number of transistors around it are taken to form a high-temperature region. Correspondingly, the positions on both sides of the high-temperature region are designated as low-temperature regions.
[0056] S103. Obtain the original spacing between the transistors in the power amplifier.
[0057] In this embodiment of the invention, the original spacing is obtained using a portion of the layout shown in Figure 4 and Figure 5 (B).
[0058] S104. Based on the original spacing, re-obtain the optimized spacing between transistors in each different temperature region.
[0059] In step S104, the original spacing is defined as d0. When the first transistor optimized spacing d1 between transistors in the low-temperature region is re-acquired, d0>d1 is made; when the second transistor optimized spacing d2 between transistors in the high-temperature region is re-acquired, d2>d0 is made.
[0060] The main purpose of optimizing the final stage heat dissipation of a power amplifier in this embodiment of the invention is to analyze the heat-generating regions, increase the spacing between transistors in high-temperature regions, and decrease the spacing between transistors in low-temperature regions. Increasing the transistor spacing optimizes the heat dissipation performance of high-heat-generating transistors, while decreasing the spacing maintains the original layout size. Therefore, it is necessary to control the degree of spacing increase and decrease during the heat dissipation optimization process.
[0061] Specifically, referring to Figure 7, in this embodiment of the invention, the number of transistors contained in the two low-temperature regions are defined as m and n, respectively, and the number of transistors contained in the high-temperature region is w, where w ≥ 3. Then, in step S104:
[0062] The total length of the reduced spacing in the low-temperature region is obtained as l1 = (m + n - 2) × (d0 – d1), which is equal to the total length of the increased spacing in the high-temperature region.
[0063] The increased basic spacing between adjacent transistors in the high-temperature region is obtained as l2 = l1 / ((w-1)×w);
[0064] The transistor with the highest temperature in the high-temperature region is identified, and the second transistor optimized spacing d2 of each adjacent transistor from this transistor to the outermost transistor in the high-temperature region are respectively: d1+(w-1)×l2, d1+(w-2)×l2, ..., d1+l2.
[0065] For example, taking a layout with 12 transistors as an example, after the temperature regions are divided, the high-temperature region contains 3 transistors and the low-temperature region contains 9 transistors. Assuming the original spacing between each transistor is 6µm, the total spacing in the original low-temperature region is (9-2)×6=42µm. If d1=3µm, the total spacing in the high-temperature region can be increased by l1=(9-2)×(6-3)=21µm. Since there are 3 transistors in the high-temperature region, 4 spacings need to be adjusted. According to the method in the above embodiment, the basic spacing l2=3.5µm, and the spacing between the highest temperature transistor and the second highest temperature transistor is adjusted to 2×3.5+6=13µm. Similarly, the spacing between the second highest temperature transistor and the transistor at the boundary of the low-temperature region is adjusted to 1×3.5+6=9.5µm. In this way, the spacing between transistors in the low-temperature region is reduced, and the spacing between transistors in the high-temperature region is increased accordingly based on their heat generation, but the overall layout size remains unchanged.
[0066] S105. Based on the optimized transistor spacing, the transistors of the power amplifier are rearranged to obtain an optimized layout.
[0067] The radio frequency front-end module heat dissipation optimization method also includes:
[0068] Based on the optimized layout, the substrate metal of the transistors of different power amplifiers is modified so that the substrate metal of different transistors are bonded together and grounded uniformly.
[0069] S106. Obtain the optimized heat dissipation RF front-end module according to the optimized layout.
[0070] In step S102, based on the thermal performance of the power amplifier, the layout is divided into multiple working areas according to the differential structure of the power amplifier, and the temperature region is divided for each working area.
[0071] As mentioned earlier, the thermal performance analysis diagram shown in Figure 4 has two wave-like shapes, corresponding to the front and back ends (i.e., two working areas) of the final stage power amplifier. The method in this embodiment optimizes the case where the front end generates significantly more heat than the back end. It can be understood that when there is a large difference in thermal performance between the front and back ends of the power amplifier, in order to better balance the thermal performance of the front and back ends of the power amplifier, the method in this embodiment can also be used to optimize the front and back ends of the power amplifier separately.
[0072] For example, the heat dissipation optimization layout obtained by optimizing the layout shown in Figure 4 is shown in Figure 8. The results of thermal performance analysis of the layout shown in Figure 8 are shown in Figure 9. Compared with the original layout, the spacing between transistors at the highest temperature position is increased. In order to further optimize the heat dissipation effect, the substrate grounding of different transistors is changed to a large area of metal to ground, so that the solder metal between different transistors has a heat transfer effect. Combining the results of thermal performance analysis, it can be seen that the final module operates at high power with a significant temperature drop, with the highest temperature being 80°C, which is 40°C lower than before. Furthermore, the temperature on both the front and rear ends is very balanced, with a difference of less than 2°C, compared to 10°C previously. The temperature difference of all transistors on one side is very small, within 5°C, compared to 20°C previously. This proves that the RF front-end module heat dissipation optimization method provided in this embodiment of the invention has a very good technical effect.
[0073] The beneficial effect achieved by this invention lies in proposing a method for optimizing the heat dissipation of radio frequency front-end modules based on transistor layout. This method analyzes the thermal performance of the power amplifier in the module to identify the heat-generating areas, and adjusts the layout of the transistors in the power amplifier to increase the spacing between transistors that generate significant heat, and to make the temperature performance of transistors in different areas of the final stage of the power amplifier more balanced, thereby reducing the heat generation of the radio frequency front-end module and improving its radio frequency performance.
[0074] This invention also provides a radio frequency front-end module heat dissipation optimization system 200. Please refer to Figure 10, which is a schematic diagram of the structure of the radio frequency front-end module heat dissipation optimization system 200 provided in this invention. The radio frequency front-end module heat dissipation optimization system 200 includes:
[0075] The layout acquisition module 201 is used to acquire the layout of the power amplifier in the RF front-end module;
[0076] The partitioning module 202 is used to continuously divide the layout into multiple temperature regions according to the thermal performance of the power amplifier;
[0077] Spacing analysis module 203 is used to obtain the original spacing between transistors in the power amplifier;
[0078] The layout optimization module 204 is used to re-obtain the optimized transistor spacing between transistors in each different temperature region based on the original spacing.
[0079] The relayout module 205 is used to relayout the transistors of the power amplifier according to the optimized transistor spacing to obtain an optimized layout.
[0080] The module optimization module 206 is used to obtain an optimized heat dissipation RF front-end module based on the optimized layout.
[0081] Based on the thermal performance of the power amplifier, the partitioning module 202 divides the layout into a high-temperature region and two low-temperature regions located on either side of the high-temperature region.
[0082] Based on the thermal performance of the power amplifier, the layout is divided into multiple working areas according to the differential structure of the power amplifier, and the temperature range is divided for each working area.
[0083] The radio frequency front-end module heat dissipation optimization system 200 can implement the steps in the radio frequency front-end module heat dissipation optimization method in the above embodiments and can achieve the same technical effect. Refer to the description in the above embodiments, which will not be repeated here.
[0084] This invention also provides a computer device. Please refer to Figure 11, which is a schematic diagram of the structure of the computer device provided in this invention. The computer device 300 includes: a memory 302, a processor 301, and a radio frequency front-end module heat dissipation optimization program stored in the memory 302 and capable of running on the processor 301.
[0085] The processor 301 calls the RF front-end module heat dissipation optimization program stored in the memory 302 and executes the steps in the RF front-end module heat dissipation optimization method provided in this embodiment of the invention. Referring to Figure 2, the specific steps include:
[0086] S101. Obtain the layout of the power amplifier in the RF front-end module.
[0087] S102. Based on the thermal performance of the power amplifier, the layout is continuously divided into multiple temperature zones.
[0088] In step S102, based on the thermal performance of the power amplifier, the layout is divided into a high-temperature region and two low-temperature regions located on both sides of the high-temperature region.
[0089] The high-temperature region is defined with the transistor with the highest temperature in the layout as the center.
[0090] S103. Obtain the original spacing between the transistors in the power amplifier.
[0091] S104. Based on the original spacing, re-obtain the optimized spacing between transistors in each different temperature region.
[0092] In step S104, the original spacing is defined as d0. When the first transistor optimized spacing d1 between transistors in the low-temperature region is re-acquired, d0>d1 is made; when the second transistor optimized spacing d2 between transistors in the high-temperature region is re-acquired, d2>d0 is made.
[0093] Let m and n be the number of transistors contained in the two low-temperature regions, respectively, and w be the number of transistors contained in the high-temperature region, where w ≥ 3. Then, in step S104:
[0094] The total length of the reduced spacing in the low-temperature region is obtained as l1 = (m + n - 2) × (d0 – d1), which is equal to the total length of the increased spacing in the high-temperature region.
[0095] The increased basic spacing between adjacent transistors in the high-temperature region is obtained as l2 = l1 / ((w-1)×w);
[0096] The transistor with the highest temperature in the high-temperature region is identified, and the spacing between each adjacent transistor from this transistor to the outermost transistor in the high-temperature region is respectively: d1+(w-1)×l2, d1+(w-2)×l2, ..., d1+l2.
[0097] S105. Based on the optimized transistor spacing, the transistors of the power amplifier are rearranged to obtain an optimized layout.
[0098] The radio frequency front-end module heat dissipation optimization method also includes:
[0099] Based on the optimized layout, the substrate metal of the transistors of different power amplifiers is modified so that the substrate metal of different transistors are bonded together and grounded uniformly.
[0100] S106. Obtain the optimized heat dissipation RF front-end module according to the optimized layout.
[0101] In step S102, based on the thermal performance of the power amplifier, the layout is divided into multiple working areas according to the differential structure of the power amplifier, and the temperature region is divided for each working area.
[0102] The computer device 300 provided in this embodiment of the invention can implement the steps in the method as described in the above embodiments and can achieve the same technical effect. Refer to the description in the above embodiments, which will not be repeated here.
[0103] This invention also provides a computer-readable storage medium storing a radio frequency front-end module heat dissipation optimization program. When the radio frequency front-end module heat dissipation optimization program is executed by a processor, it implements the various processes and steps in the method provided in this invention and can achieve the same technical effect. To avoid repetition, it will not be described again here.
[0104] Those skilled in the art will understand that implementing all or part of the processes in the above embodiments can be accomplished by instructing related hardware (such as mobile phones, computers, servers, air conditioners, or network devices, etc.) through a radio frequency front-end module thermal optimization program. The program can be stored in a computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. The storage medium can be a magnetic disk, optical disk, read-only memory (ROM), or random access memory (RAM), etc.
[0105] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.
[0106] The embodiments of the present invention have been described above with reference to the accompanying drawings. The disclosed embodiments are merely preferred embodiments of the present invention. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many equivalent changes in form without departing from the spirit and scope of the claims of the present invention, and all such changes are within the protection scope of the present invention.
Claims
1. A method for optimizing heat dissipation in an RF front-end module, characterized in that, The radio frequency front-end module heat dissipation optimization method includes the following steps: S101. Obtain the layout of the power amplifier in the RF front-end module; S102. Based on the thermal performance of the power amplifier, the layout is continuously divided into multiple temperature zones; S103. Obtain the original spacing between the transistors in the power amplifier; S104. Based on the original spacing, re-obtain the optimized spacing between transistors in each different temperature region; S105. Based on the optimized transistor spacing, the transistors of the power amplifier are rearranged to obtain an optimized layout. S106. Obtain the optimized heat dissipation RF front-end module according to the optimized layout.
2. The method for optimizing heat dissipation of the radio frequency front-end module according to claim 1, characterized in that, In step S102, based on the thermal performance of the power amplifier, the layout is divided into a high-temperature region and two low-temperature regions located on both sides of the high-temperature region.
3. The method for optimizing heat dissipation of the radio frequency front-end module according to claim 2, characterized in that, The high-temperature region is defined with the transistor with the highest temperature in the layout as the center.
4. The method for optimizing heat dissipation of the radio frequency front-end module according to claim 3, characterized in that, In step S104, the original spacing is defined as d0. When the first transistor optimized spacing d1 between transistors in the low-temperature region is re-acquired, d0>d1 is made; when the second transistor optimized spacing d2 between transistors in the high-temperature region is re-acquired, d2>d0 is made.
5. The RF front-end module heat dissipation optimization method according to claim 4, characterized in that, Let m and n be the number of transistors contained in the two low-temperature regions, respectively, and w be the number of transistors contained in the high-temperature region, where w ≥ 3. Then, in step S104: The total length of the reduced spacing in the low-temperature region is obtained as l1 = (m + n - 2) × (d0 – d1), which is equal to the total length of the increased spacing in the high-temperature region. The increased basic spacing between adjacent transistors in the high-temperature region is obtained as l2 = l1 / ((w-1)×w); The transistor with the highest temperature in the high-temperature region is identified. The spacing between adjacent transistors from this transistor to the outermost transistor in the high-temperature region is d1+(w-1)×l2, d1+(w-2)×l2, ..., d1+l2, respectively.
6. The method for optimizing heat dissipation of the radio frequency front-end module according to claim 2, characterized in that, In step S102, based on the thermal performance of the power amplifier, the layout is divided into multiple working areas according to the differential structure of the power amplifier, and the temperature region is divided for each working area.
7. The method for optimizing heat dissipation of an RF front-end module according to claim 1, characterized in that, After step S105, the RF front-end module heat dissipation optimization method further includes: Based on the optimized layout, the substrate metal of the transistors of different power amplifiers is modified so that the substrate metal of different transistors are bonded together and grounded uniformly.
8. A radio frequency front-end module heat dissipation optimization system, characterized in that, include: The layout acquisition module is used to acquire the layout of the power amplifier in the RF front-end module; A partitioning module is used to continuously divide the layout into multiple temperature zones based on the thermal performance of the power amplifier. A spacing analysis module is used to obtain the original spacing between transistors in the power amplifier; The layout optimization module is used to re-obtain the optimized transistor spacing between transistors in each different temperature region based on the original spacing. The relayout module is used to relayout the transistors of the power amplifier according to the optimized transistor spacing to obtain an optimized layout. The module optimization module is used to obtain an optimized RF front-end module with improved heat dissipation based on the optimized layout.
9. A computer device, characterized in that, include: The device includes a memory, a processor, and a radio frequency front-end module thermal optimization program stored in the memory and executable on the processor. When the processor executes the radio frequency front-end module thermal optimization program, it implements the steps in the radio frequency front-end module thermal optimization method as described in any one of claims 1-7.
10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a radio frequency front-end module heat dissipation optimization program, which, when executed by a processor, implements the steps of the radio frequency front-end module heat dissipation optimization method as described in any one of claims 1-7.