Radical supply device, substrate processing device, radical generation method, and substrate processing method
The radical supply device with a metal conductor coil and enlarged end electrodes addresses instability in radical generation, ensuring consistent and efficient radical supply for semiconductor manufacturing processes.
WO2026146625A1PCT designated stage Publication Date: 2026-07-09TOKYO ELECTRON LTD
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Filing Date
- 2025-12-24
- Publication Date
- 2026-07-09
Smart Images
Figure JP2025045424_09072026_PF_FP_ABST
Abstract
This radical supply device for supplying radicals of a processing gas for processing a substrate comprises: a container that forms a space in which radicals are generated; a processing gas supply mechanism that supplies the processing gas into the container; a radical generation coil that is formed from a metal conductor, increases in temperature when supplied with power through non-contact power supply in the container, and thereby acts as a metal catalyst to generate radicals of the processing gas; and a power supply antenna that is connected to a high-frequency power supply and performs the non-contact power supply to the radical generation coil from the outside of the container. A terminal portion of the radical generation coil includes an end electrode having an area larger than a cross-sectional area of the metal conductor.
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