Substrate processing apparatus

Abstract

Disclosed is a substrate processing apparatus comprising a process chamber, a substrate support structure, gas spraying structures, and a control part. The process chamber comprises a plurality of process areas for processing a plurality of substrates. The substrate support structure is positioned inside the process chamber and comprises a susceptor and a rotary shaft. The susceptor comprises a plurality of seating parts for receiving therein a plurality of substrate support modules which support the respective plurality of substrates and have a rotate function. The rotary shaft is positioned on the lower portion of the susceptor so as to rotate the susceptor. The gas spraying structures are disposed at the upper portion of the process chamber so as to face the substrate support structure. The gas spraying structures are provided, one each, in the respective plurality of process areas and comprise a plurality of process gas parts for spraying a plurality of process gases to the substrates seated in the plurality of substate support modules facing the gas spraying structures. The control part adjusts the rotation speed of the plurality of substrate support modules individually and differently.

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