Radiation source

A tunable radiation source with an optomechanical component adjusts the angle of incidence to generate high brilliance X-ray radiation, addressing the challenge of accurate metrology in semiconductor manufacturing by providing compact and cost-effective high frequency radiation for improved process control.

WO2026153744A1 Publication Date: 2026-07-23ASML NETHERLANDS BV
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Patent Information

Application Number
PCT/EP2025/088254
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-01-17
Filing Date
2025-12-18
Publication Date
2026-07-23

AI Technical Summary

Technical Problem

Existing semiconductor manufacturing processes face challenges in accurately measuring small features and structures due to the lack of high brilliance, high frequency radiation sources suitable for high volume manufacturing, leading to inaccurate metrology results and inefficiencies in processes like lithography and etching.

Method used

A tunable radiation source comprising an electron source, a laser source, and an optomechanical component that adjusts the angle of incidence between the laser beam and electron pulses to generate high brilliance X-ray radiation, enabling compact and cost-effective generation of high frequency radiation suitable for semiconductor manufacturing.

Benefits of technology

The radiation source provides a robust and repeatable method to tune output radiation wavelength, enhancing the accuracy of metrology and process control in semiconductor manufacturing by generating high brilliance X-ray radiation, suitable for high volume manufacturing applications.

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Abstract

A radiation source comprising: an electron source configured to generate pulses of electrons; a laser source configured to generate a laser beam, the laser source and the electron source being arranged such that the pulses of electrons collide with the laser beam at an interaction point to generate output radiation; and an optomechanical component configured for adjusting an angle of incidence between the laser beam and the pulses of electrons at the interaction point.
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