How to Evaluate Light Source Stability in EUV Lithography Systems
APR 2, 20269 MIN READ
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EUV Light Source Technology Background and Stability Goals
Extreme Ultraviolet (EUV) lithography represents a revolutionary advancement in semiconductor manufacturing, enabling the production of chips with feature sizes below 7 nanometers. This technology utilizes light with a wavelength of 13.5 nm, significantly shorter than the 193 nm wavelength used in traditional deep ultraviolet (DUV) lithography systems. The transition to EUV has been driven by the semiconductor industry's relentless pursuit of Moore's Law and the need to continue scaling down transistor dimensions.
The development of EUV lithography began in the 1980s as a collaborative effort between government laboratories, academic institutions, and industry partners. Early research focused on overcoming fundamental challenges such as the lack of transparent materials at EUV wavelengths, requiring the use of reflective optics throughout the entire system. The technology gained momentum in the 2000s with substantial investments from major semiconductor manufacturers and equipment suppliers.
EUV light sources operate on the principle of laser-produced plasma (LPP), where high-power CO2 lasers strike tin droplets to create plasma that emits EUV radiation. This process occurs within a vacuum chamber, as EUV light is readily absorbed by most materials, including air. The complexity of this system introduces numerous variables that can affect light source performance and stability.
Light source stability in EUV lithography systems is critical for achieving the precision required in advanced semiconductor manufacturing. Stability encompasses multiple parameters including power output consistency, spectral purity, spatial uniformity, and temporal coherence. Even minor fluctuations in these parameters can result in pattern placement errors, critical dimension variations, and ultimately yield loss in semiconductor production.
The primary stability goals for EUV light sources include maintaining power output variations within ±1% over extended periods, ensuring spectral bandwidth stability to preserve imaging contrast, and achieving dose control accuracy better than 0.5%. Additionally, the light source must demonstrate consistent performance across millions of pulses while maintaining debris mitigation effectiveness to protect optical components from tin contamination.
Current industry targets also emphasize the need for predictable aging characteristics and minimal warm-up time variations. These requirements stem from the economic imperative to maximize tool uptime and maintain consistent wafer processing conditions across production lots, ensuring reproducible device performance and meeting stringent quality standards demanded by advanced semiconductor applications.
The development of EUV lithography began in the 1980s as a collaborative effort between government laboratories, academic institutions, and industry partners. Early research focused on overcoming fundamental challenges such as the lack of transparent materials at EUV wavelengths, requiring the use of reflective optics throughout the entire system. The technology gained momentum in the 2000s with substantial investments from major semiconductor manufacturers and equipment suppliers.
EUV light sources operate on the principle of laser-produced plasma (LPP), where high-power CO2 lasers strike tin droplets to create plasma that emits EUV radiation. This process occurs within a vacuum chamber, as EUV light is readily absorbed by most materials, including air. The complexity of this system introduces numerous variables that can affect light source performance and stability.
Light source stability in EUV lithography systems is critical for achieving the precision required in advanced semiconductor manufacturing. Stability encompasses multiple parameters including power output consistency, spectral purity, spatial uniformity, and temporal coherence. Even minor fluctuations in these parameters can result in pattern placement errors, critical dimension variations, and ultimately yield loss in semiconductor production.
The primary stability goals for EUV light sources include maintaining power output variations within ±1% over extended periods, ensuring spectral bandwidth stability to preserve imaging contrast, and achieving dose control accuracy better than 0.5%. Additionally, the light source must demonstrate consistent performance across millions of pulses while maintaining debris mitigation effectiveness to protect optical components from tin contamination.
Current industry targets also emphasize the need for predictable aging characteristics and minimal warm-up time variations. These requirements stem from the economic imperative to maximize tool uptime and maintain consistent wafer processing conditions across production lots, ensuring reproducible device performance and meeting stringent quality standards demanded by advanced semiconductor applications.
Market Demand for Advanced EUV Lithography Systems
The global semiconductor industry's relentless pursuit of smaller node technologies has created unprecedented demand for advanced EUV lithography systems, with light source stability emerging as a critical performance differentiator. Leading semiconductor manufacturers including TSMC, Samsung, and Intel are driving substantial investments in next-generation EUV equipment to enable production of 3nm, 2nm, and beyond process nodes. These advanced manufacturing requirements necessitate increasingly stringent specifications for light source performance consistency and reliability.
Market demand is particularly intense from high-volume manufacturing facilities where production efficiency directly correlates with light source stability metrics. Foundries operating at cutting-edge nodes require EUV systems capable of maintaining consistent dose delivery and wavelength stability over extended production runs. The economic impact of light source instability extends beyond immediate throughput losses to encompass yield degradation, increased maintenance costs, and potential production line disruptions.
Memory manufacturers represent another significant demand segment, as they transition from traditional immersion lithography to EUV for critical layers in DRAM and NAND flash production. The stringent overlay and critical dimension uniformity requirements in memory devices amplify the importance of stable light source performance. Advanced packaging applications, including chiplet integration and heterogeneous integration technologies, further expand the addressable market for stable EUV light sources.
The automotive semiconductor sector's growing sophistication, driven by electric vehicles and autonomous driving technologies, is creating additional demand for advanced node production capabilities. These applications require exceptional reliability standards, making light source stability evaluation methodologies increasingly valuable for qualifying production equipment.
Emerging applications in artificial intelligence accelerators, quantum computing components, and advanced sensor technologies are establishing new performance benchmarks that demand superior light source stability. The market's evolution toward specialized semiconductor architectures necessitates more precise control over lithographic processes, elevating the strategic importance of comprehensive light source stability evaluation frameworks for equipment manufacturers and end users alike.
Market demand is particularly intense from high-volume manufacturing facilities where production efficiency directly correlates with light source stability metrics. Foundries operating at cutting-edge nodes require EUV systems capable of maintaining consistent dose delivery and wavelength stability over extended production runs. The economic impact of light source instability extends beyond immediate throughput losses to encompass yield degradation, increased maintenance costs, and potential production line disruptions.
Memory manufacturers represent another significant demand segment, as they transition from traditional immersion lithography to EUV for critical layers in DRAM and NAND flash production. The stringent overlay and critical dimension uniformity requirements in memory devices amplify the importance of stable light source performance. Advanced packaging applications, including chiplet integration and heterogeneous integration technologies, further expand the addressable market for stable EUV light sources.
The automotive semiconductor sector's growing sophistication, driven by electric vehicles and autonomous driving technologies, is creating additional demand for advanced node production capabilities. These applications require exceptional reliability standards, making light source stability evaluation methodologies increasingly valuable for qualifying production equipment.
Emerging applications in artificial intelligence accelerators, quantum computing components, and advanced sensor technologies are establishing new performance benchmarks that demand superior light source stability. The market's evolution toward specialized semiconductor architectures necessitates more precise control over lithographic processes, elevating the strategic importance of comprehensive light source stability evaluation frameworks for equipment manufacturers and end users alike.
Current EUV Source Stability Challenges and Limitations
EUV lithography systems face unprecedented challenges in maintaining light source stability, primarily due to the fundamental physics of extreme ultraviolet generation. The most critical limitation stems from the laser-produced plasma (LPP) mechanism, where high-power CO2 lasers interact with tin droplets to generate 13.5nm wavelength light. This process inherently produces significant power fluctuations, typically ranging from 2-5% RMS, which directly impacts dose uniformity across wafer exposures.
Thermal management represents another major constraint affecting source stability. The intense energy deposition during plasma generation creates substantial heat loads that cause thermal drift in optical components and mechanical structures. These thermal effects manifest as wavelength shifts, beam pointing instabilities, and changes in spectral purity over time. Current cooling systems struggle to maintain the sub-millikelvin temperature stability required for consistent EUV output.
Debris mitigation systems introduce additional stability complications. The protective mechanisms designed to shield collector mirrors from tin debris, including buffer gas injection and magnetic field confinement, create dynamic pressure variations that affect plasma formation consistency. These mitigation strategies, while necessary for component longevity, contribute to pulse-to-pulse energy variations and spectral bandwidth fluctuations.
Collector mirror degradation poses a long-term stability challenge that current systems cannot fully address. Despite advanced cleaning techniques and protective coatings, reflectivity losses occur gradually due to tin contamination and hydrogen radical etching. This degradation results in slowly declining EUV power output, requiring frequent recalibration and eventual mirror replacement.
Synchronization between the droplet generator and laser timing systems remains problematic. Achieving consistent droplet positioning with sub-microsecond precision while maintaining optimal laser pulse timing creates inherent jitter in the plasma formation process. Current feedback control systems have limited bandwidth to compensate for these rapid variations.
Spectral stability presents additional challenges as plasma conditions fluctuate. Variations in plasma temperature and density cause shifts in the EUV spectral distribution, affecting the effective bandwidth and center wavelength. These spectral changes impact lithographic performance through altered resist sensitivity and pattern fidelity.
Finally, the integration of multiple subsystems creates complex interdependencies that amplify individual component instabilities. Power supply fluctuations, mechanical vibrations, and environmental variations combine to produce compound effects on overall source stability that exceed the sum of individual contributions.
Thermal management represents another major constraint affecting source stability. The intense energy deposition during plasma generation creates substantial heat loads that cause thermal drift in optical components and mechanical structures. These thermal effects manifest as wavelength shifts, beam pointing instabilities, and changes in spectral purity over time. Current cooling systems struggle to maintain the sub-millikelvin temperature stability required for consistent EUV output.
Debris mitigation systems introduce additional stability complications. The protective mechanisms designed to shield collector mirrors from tin debris, including buffer gas injection and magnetic field confinement, create dynamic pressure variations that affect plasma formation consistency. These mitigation strategies, while necessary for component longevity, contribute to pulse-to-pulse energy variations and spectral bandwidth fluctuations.
Collector mirror degradation poses a long-term stability challenge that current systems cannot fully address. Despite advanced cleaning techniques and protective coatings, reflectivity losses occur gradually due to tin contamination and hydrogen radical etching. This degradation results in slowly declining EUV power output, requiring frequent recalibration and eventual mirror replacement.
Synchronization between the droplet generator and laser timing systems remains problematic. Achieving consistent droplet positioning with sub-microsecond precision while maintaining optimal laser pulse timing creates inherent jitter in the plasma formation process. Current feedback control systems have limited bandwidth to compensate for these rapid variations.
Spectral stability presents additional challenges as plasma conditions fluctuate. Variations in plasma temperature and density cause shifts in the EUV spectral distribution, affecting the effective bandwidth and center wavelength. These spectral changes impact lithographic performance through altered resist sensitivity and pattern fidelity.
Finally, the integration of multiple subsystems creates complex interdependencies that amplify individual component instabilities. Power supply fluctuations, mechanical vibrations, and environmental variations combine to produce compound effects on overall source stability that exceed the sum of individual contributions.
Existing EUV Source Stability Evaluation Methods
01 Power supply and drive circuit stabilization
Light source stability can be achieved through optimized power supply systems and drive circuits that regulate current and voltage. Advanced drive circuits incorporate feedback mechanisms and constant current control to minimize fluctuations in light output. These systems may include voltage stabilizers, current limiters, and thermal management components to ensure consistent light emission over extended periods of operation.- Power supply and drive circuit optimization for light source stability: Light source stability can be enhanced through optimized power supply systems and drive circuits that regulate current and voltage. Advanced drive circuits incorporate feedback mechanisms and constant current control to minimize fluctuations in light output. These systems may include voltage stabilization modules, current limiting circuits, and intelligent control units that monitor and adjust power delivery in real-time to maintain consistent luminous intensity throughout the operational lifetime of the light source.
- Thermal management systems for maintaining light source performance: Effective thermal management is critical for light source stability as temperature variations directly affect light output consistency. Heat dissipation structures, cooling systems, and temperature monitoring devices help maintain optimal operating temperatures. These solutions include heat sinks, thermal conductive materials, active cooling mechanisms, and temperature-responsive control systems that prevent overheating and ensure stable light emission characteristics over extended periods of operation.
- Optical feedback and monitoring systems for stability control: Optical feedback mechanisms and monitoring systems enable real-time detection and correction of light output variations. These systems employ photodetectors, sensors, and control algorithms to continuously measure light intensity and adjust operating parameters accordingly. The feedback loop ensures that any deviation from target output levels is immediately compensated, maintaining consistent illumination despite aging effects, environmental changes, or component variations.
- Light source structure and material improvements for enhanced stability: Structural design improvements and advanced materials contribute significantly to light source stability. This includes optimized electrode configurations, enhanced encapsulation techniques, and the use of stable phosphor materials or quantum dot technologies. These innovations reduce degradation rates, minimize color shift over time, and improve resistance to environmental factors such as humidity and temperature fluctuations, resulting in more consistent long-term performance.
- Calibration and compensation algorithms for maintaining output consistency: Software-based calibration methods and compensation algorithms play a crucial role in maintaining light source stability. These systems utilize predictive models, aging compensation algorithms, and adaptive control strategies to counteract performance degradation over time. Regular calibration routines, automatic adjustment protocols, and intelligent compensation mechanisms ensure that light output remains within specified tolerances throughout the device's operational life, accounting for both predictable aging patterns and unexpected variations.
02 Thermal management and heat dissipation
Maintaining stable light output requires effective thermal management systems to control the operating temperature of light sources. Heat dissipation structures, cooling mechanisms, and temperature monitoring systems help prevent performance degradation caused by thermal stress. These solutions include heat sinks, cooling fans, thermal interface materials, and temperature-responsive control systems that adjust operating parameters based on thermal conditions.Expand Specific Solutions03 Optical feedback and monitoring systems
Stability of light sources can be enhanced through optical feedback systems that continuously monitor light output and adjust operating parameters accordingly. These systems employ photodetectors, sensors, and control algorithms to detect variations in light intensity, spectrum, or other characteristics, and automatically compensate for any deviations to maintain consistent performance throughout the operational lifetime.Expand Specific Solutions04 Structural design and mechanical stability
Physical stability of light sources is achieved through robust structural designs that minimize vibration, mechanical stress, and environmental impacts. Mounting systems, enclosures, and support structures are engineered to maintain precise alignment and positioning of optical components. These designs incorporate shock absorption, vibration damping, and protective housings to ensure stable operation under various environmental conditions.Expand Specific Solutions05 Aging compensation and lifetime extension
Long-term stability of light sources is maintained through aging compensation techniques and lifetime extension strategies. These approaches include adaptive control algorithms that adjust operating parameters as components age, predictive maintenance systems, and component selection strategies that minimize degradation over time. Such methods help maintain consistent light output characteristics throughout the expected service life of the light source.Expand Specific Solutions
Key Players in EUV Lithography Equipment Industry
The EUV lithography light source stability evaluation field represents a critical technology bottleneck in advanced semiconductor manufacturing, currently in a mature development stage with intense competition among established players. The market, valued at several billion dollars, is dominated by ASML Netherlands BV, which holds near-monopolistic control over EUV systems integration. Technology maturity varies significantly across the ecosystem: ASML demonstrates the highest integration capabilities, while Carl Zeiss SMT GmbH leads in precision optics solutions. Key players like Tokyo Electron Ltd., KLA Corp., and Keysight Technologies provide essential measurement and process control technologies. Asian manufacturers including Taiwan Semiconductor Manufacturing Co., Samsung Electronics, and Semiconductor Manufacturing International represent major end-users driving stability requirements. Research institutions like Institute of Microelectronics of Chinese Academy of Sciences and Harbin Institute of Technology contribute fundamental research, while companies like Ushio focus on specialized light source components, creating a complex but maturing technological landscape.
Carl Zeiss SMT GmbH
Technical Solution: Carl Zeiss SMT focuses on optical system stability evaluation for EUV lithography, particularly in collector mirror and illumination optics performance assessment. Their methodology emphasizes reflectivity degradation monitoring through in-situ ellipsometry and scatterometry measurements. The company develops specialized metrology tools to evaluate mirror surface contamination, thermal deformation effects, and multilayer coating stability under EUV radiation exposure. Their evaluation protocols include accelerated aging tests, contamination resistance assessments, and optical performance mapping across the entire mirror surface. Zeiss implements advanced modeling techniques to predict long-term optical performance degradation and correlate measured parameters with lithographic imaging quality. Their approach integrates real-time feedback systems to compensate for optical system variations and maintain consistent light delivery to the wafer plane.
Strengths: Leading expertise in precision optics, advanced metrology capabilities, strong integration with ASML systems. Weaknesses: Dependent on ASML partnership, limited direct customer interaction, high R&D investment requirements for next-generation optics.
ASML Netherlands BV
Technical Solution: ASML employs comprehensive light source stability evaluation methods for their EUV lithography systems, focusing on laser-produced plasma (LPP) light sources. Their approach includes real-time monitoring of power stability, spectral purity, and dose control accuracy. The company utilizes advanced metrology systems to measure power fluctuations within ±1% over extended periods, ensuring consistent exposure doses across wafer surfaces. Their evaluation framework incorporates statistical process control methods to track long-term drift patterns and implements predictive maintenance algorithms to anticipate source degradation. ASML's stability assessment also includes thermal management evaluation, plasma debris mitigation effectiveness, and collector mirror reflectivity monitoring to maintain optimal EUV power delivery throughout the lithography process.
Strengths: Market leader with most advanced EUV systems, comprehensive real-time monitoring capabilities, proven track record in high-volume manufacturing. Weaknesses: High system complexity, expensive maintenance requirements, limited supplier ecosystem for critical components.
Core Innovations in EUV Source Stability Measurement
EUV illumination system with a system for measuring fluctuations of the light source
PatentInactiveUS20110079737A1
Innovation
- An EUV illumination system with a measurement mechanism using an aperture stop and sensor arrangement to detect changes in the position and power of the EUV light source, allowing for adjustments to maintain uniform illumination by observing the light source or its intermediate images, thereby correcting for positional shifts and intensity fluctuations.
Systems and methods for avoiding instabilities in a radiation source plasma chamber
PatentActiveJP2019502146A
Innovation
- Implement a system that detects approaching unstable conditions in EUV energy production and adjusts the laser beam along the Y-axis to avoid these instabilities using Kalman filters and feedback mechanisms.
Semiconductor Manufacturing Standards and Regulations
The semiconductor manufacturing industry operates under a comprehensive framework of standards and regulations that directly impact EUV lithography systems and their light source stability evaluation protocols. International standards organizations such as SEMI (Semiconductor Equipment and Materials International) and ISO have established critical guidelines that define measurement methodologies, performance criteria, and quality assurance requirements for advanced lithography equipment.
SEMI standards, particularly those in the E-series for equipment specifications, provide detailed requirements for EUV system performance metrics including light source power stability, dose uniformity, and temporal variations. These standards mandate specific measurement intervals, statistical analysis methods, and acceptable tolerance ranges for power fluctuations that directly influence how manufacturers evaluate light source stability.
Regulatory compliance frameworks vary significantly across major semiconductor manufacturing regions. The United States follows FDA and NIST guidelines for radiation safety and metrology standards, while the European Union implements CE marking requirements and RoHS compliance for EUV systems. Asian markets, particularly Japan, South Korea, and Taiwan, have developed region-specific standards that often exceed international baseline requirements for precision and safety.
Environmental and safety regulations play a crucial role in shaping light source evaluation protocols. EUV systems generate significant amounts of debris, require specialized gas handling systems, and operate under extreme conditions that necessitate continuous monitoring. Regulatory bodies mandate specific safety interlocks, contamination control measures, and operator protection protocols that directly influence how stability measurements are conducted and validated.
Quality management systems such as ISO 9001 and automotive-specific standards like IATF 16949 require comprehensive documentation and traceability for all measurement processes. These standards mandate calibration procedures, measurement uncertainty analysis, and statistical process control methods that form the foundation of reliable light source stability evaluation.
Emerging regulations addressing cybersecurity, data integrity, and intellectual property protection are increasingly impacting how EUV lithography data is collected, stored, and analyzed. These evolving requirements necessitate secure measurement systems and encrypted data transmission protocols for stability evaluation processes.
SEMI standards, particularly those in the E-series for equipment specifications, provide detailed requirements for EUV system performance metrics including light source power stability, dose uniformity, and temporal variations. These standards mandate specific measurement intervals, statistical analysis methods, and acceptable tolerance ranges for power fluctuations that directly influence how manufacturers evaluate light source stability.
Regulatory compliance frameworks vary significantly across major semiconductor manufacturing regions. The United States follows FDA and NIST guidelines for radiation safety and metrology standards, while the European Union implements CE marking requirements and RoHS compliance for EUV systems. Asian markets, particularly Japan, South Korea, and Taiwan, have developed region-specific standards that often exceed international baseline requirements for precision and safety.
Environmental and safety regulations play a crucial role in shaping light source evaluation protocols. EUV systems generate significant amounts of debris, require specialized gas handling systems, and operate under extreme conditions that necessitate continuous monitoring. Regulatory bodies mandate specific safety interlocks, contamination control measures, and operator protection protocols that directly influence how stability measurements are conducted and validated.
Quality management systems such as ISO 9001 and automotive-specific standards like IATF 16949 require comprehensive documentation and traceability for all measurement processes. These standards mandate calibration procedures, measurement uncertainty analysis, and statistical process control methods that form the foundation of reliable light source stability evaluation.
Emerging regulations addressing cybersecurity, data integrity, and intellectual property protection are increasingly impacting how EUV lithography data is collected, stored, and analyzed. These evolving requirements necessitate secure measurement systems and encrypted data transmission protocols for stability evaluation processes.
Supply Chain Security in EUV Technology Development
Supply chain security represents a critical vulnerability in EUV lithography technology development, particularly when evaluating light source stability systems. The highly specialized nature of EUV components creates dependencies on a limited number of suppliers worldwide, establishing potential single points of failure that could compromise both technological advancement and operational continuity.
The EUV light source evaluation ecosystem relies on sophisticated components including laser systems, tin droplet generators, collector mirrors, and precision measurement instruments. These components originate from a concentrated supplier base primarily located in Europe, Japan, and the United States. Key suppliers such as Cymer (ASML subsidiary), Gigaphoton, and specialized optics manufacturers maintain proprietary technologies that are difficult to substitute, creating inherent supply chain risks.
Geopolitical tensions significantly impact EUV supply chain security, as export controls and trade restrictions can disrupt component availability. The semiconductor industry has witnessed increasing scrutiny over technology transfer and dual-use applications, leading to enhanced regulatory oversight of EUV-related components. These restrictions particularly affect the distribution of critical measurement and diagnostic equipment necessary for light source stability evaluation.
Material sourcing presents another security challenge, as EUV systems require ultra-pure materials and rare elements. Tin feedstock for plasma generation, specialized mirror coatings, and high-precision optical components depend on limited global sources. Supply disruptions in these materials directly impact the ability to maintain and evaluate light source performance standards.
Intellectual property protection within the supply chain creates additional security considerations. The transfer of sensitive technical specifications and calibration data between suppliers and system integrators requires robust cybersecurity measures. Unauthorized access to proprietary evaluation methodologies could compromise competitive advantages and system performance optimization.
Risk mitigation strategies include supplier diversification initiatives, strategic inventory management, and development of alternative evaluation technologies. Leading EUV manufacturers are investing in supply chain resilience through long-term partnerships, technology licensing agreements, and in-house capability development to reduce external dependencies while maintaining evaluation system integrity.
The EUV light source evaluation ecosystem relies on sophisticated components including laser systems, tin droplet generators, collector mirrors, and precision measurement instruments. These components originate from a concentrated supplier base primarily located in Europe, Japan, and the United States. Key suppliers such as Cymer (ASML subsidiary), Gigaphoton, and specialized optics manufacturers maintain proprietary technologies that are difficult to substitute, creating inherent supply chain risks.
Geopolitical tensions significantly impact EUV supply chain security, as export controls and trade restrictions can disrupt component availability. The semiconductor industry has witnessed increasing scrutiny over technology transfer and dual-use applications, leading to enhanced regulatory oversight of EUV-related components. These restrictions particularly affect the distribution of critical measurement and diagnostic equipment necessary for light source stability evaluation.
Material sourcing presents another security challenge, as EUV systems require ultra-pure materials and rare elements. Tin feedstock for plasma generation, specialized mirror coatings, and high-precision optical components depend on limited global sources. Supply disruptions in these materials directly impact the ability to maintain and evaluate light source performance standards.
Intellectual property protection within the supply chain creates additional security considerations. The transfer of sensitive technical specifications and calibration data between suppliers and system integrators requires robust cybersecurity measures. Unauthorized access to proprietary evaluation methodologies could compromise competitive advantages and system performance optimization.
Risk mitigation strategies include supplier diversification initiatives, strategic inventory management, and development of alternative evaluation technologies. Leading EUV manufacturers are investing in supply chain resilience through long-term partnerships, technology licensing agreements, and in-house capability development to reduce external dependencies while maintaining evaluation system integrity.
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