A variable resistance across the transformer primary reduces VSWR at higher frequencies while maintaining ACLR and amplifier efficiency.
Shared switcher circuits generate selectable APT voltages for multiple power amplifiers, enabling fast adaptation with lower PMIC footprint and cost.
Parallel amplifier paths split TDD output power across filters, enabling higher RF output without exceeding filter withstand limits.
A comparator and transistor protection circuit restores input voltage quickly under large current, preventing breakage and cutting settling time.
Stacked CMOS transconductance devices reuse supply current to lower driver output impedance and remove inter-stage matching in 5G power amplifiers.
Peak-based PA resistance estimation updates equalizer settings to correct envelope tracking errors and improve RF amplifier efficiency.
Common-mode capacitors and differential attenuation raise CMRR, limit DC-offset saturation, and improve ECG signal amplification.
Voltage and current sampling replace couplers to measure PA incident power accurately across load changes while saving chip area.
Tapped reactive components let a low-power amplifier select discrete voltage levels for precise output control with fewer parts and lower area.
On-chip integration of the linear amplifier and RF power amplifier removes PCB inductive peaking, improving wideband envelope tracking linearity.
Adaptive Class-AB/Class-C Doherty biasing improves RF amplifier efficiency and linearity while limiting AM-PM distortion from output capacitance shifts.
Integrated switch networks and a coexistence filter cut WiFi/Bluetooth interference with LTE and GPS while reducing RF front-end footprint and power.
Digital modeling compensates supply voltage filter loading in envelope tracking to cut RF power amplifier distortion and improve efficiency.
A totem-pole driver with an inductor speeds charging and discharging of a high-power RFPA gate capacitor, improving slew rate and efficiency.
Selectable cascode bias voltages from a regulated bandgap path let one RF PA design operate accurately across multiple supply domains.
A closed-loop cascode reference bias keeps scaled amplifier current stable despite supply, bias, and stack-height variations in CMOS RF stages.
Dynamic switching between Class AD and Class BD modes improves Class D amplifier efficiency, linearity, and EMI behavior across input signals.
Multiple amplifier sections along transmission lines build RF output efficiently across wide bandwidth without resonators or high transistor cost.
Cross-coupled compensation transistors keep input capacitance stable as signal power rises, reducing delay and phase distortion in differential outputs.
A three-way GaN RF amplifier splits carrier and peaking paths by transistor capacity to cut coupling and keep high efficiency in a compact layout.
A quadrature balanced power amplifier isolates transmit and receive paths on one antenna without bulky circulators, reducing loss and size.
By switching in-phase and out-of-phase combining with frequency, the amplifier modulates summing-node impedance and preserves back-off efficiency.
An LC notch in the power amplifier supply path attenuates stopband transmit components, reducing Tx-Rx self-interference and protecting reception quality.
Dynamic envelope tracking with GaN FET supply adaptation raises RF transmit power and PAE while limiting battery drain in high-frequency amplifiers.
Integrating the PA, filter, and multi-channel switch on one chip supports SRS polling across antenna ports while reducing RF substrate area and cost.
Separate inductor and capacitor filter paths route low and high band signals with lower transmit loss, preserved power gain, and reduced leakage.
A switching path isolates an unpowered circuit block to stop leakage currents while preserving signal transfer when the second domain wakes.
Common-mode capacitors attenuate low-frequency common-mode voltage and DC offset, boosting CMRR and preventing amplifier saturation.
An adjustable input resistor helps a transimpedance amplifier handle mixer impedance shifts across RF bands while maintaining bandwidth and stability.
An isolation structure between RF package leads cuts mutual coupling while preserving rivet fixation and internal space efficiency.
Switching arrangements isolate OFF LNA branches from excessive supply voltage, protecting thin-oxide transistors while preserving gain and noise figure.
A 90° hybrid coupler compares output power levels to determine RF phase shift accurately without complex phase calculation in 5G bands.
A self-locking H-bridge output stage enables soft current reduction in MR gradient coils to avoid hard stops and reduce cardiac stimulation risk.
Current-mode combining across stacked transconducting cells boosts RF amplifier output power while reducing layout loss, chip area, and voltage stress.
Frequency-selective harmonic traps and spur-reduction networks stabilize power amplifiers under high out-of-band VSWR without major efficiency loss.
A two-FET distributed amplifier uses unequal peripheries and artificial transmission lines to keep wideband RF power efficiency and impedance matching.
A peaking-stage envelope-tracking bias cuts load current and capacitance, helping Doherty amplifiers improve efficiency and linearity.
A complementary HEMT switch cancels second- and third-order harmonics in power amplifiers, improving linearity with lower distortion.
Cross-coupled single-ended amplifiers improve isolated data link accuracy and noise rejection while cutting receiver power use.
A two-stage source-follower with feedforward biasing and band shaping cuts MEMS microphone noise while limiting power draw.
A non-linear reactance in the carrier output network shifts load impedance at low power, improving Doherty amplifier efficiency and linearity.
A low-voltage carrier driver and high-voltage peaking path reduce matching losses and DC power use while preserving Doherty amplifier gain.
A reverse-connected diode clamps FET gate overvoltage while bootstrapping gain before compression, improving linearity with minimal circuit area.
A microphone, phase shift, and speaker suppress fan noise in aspirating smoke detectors without compromising air-draw detection.
Reconfigurable digital power amplifiers and pulse shaping cut carrier leakage and power use in multi-gigabit mm-wave transmission.
Dynamic gain and phase control keeps total current across multiple audio amplifiers below battery limits while avoiding voltage drop.
A CTLE plus attenuation-only continuous-time VGA shifts gain to interleaved discrete-time VGAs, improving linearity and lowering power.
Dynamic power-voltage shaping controls pulse slew rate to cut ringing, conduction loss, and RFI while preserving reliable PSI5 data timing.
A differential inductor and resistor element replace resistive splitting to cut RF signal loss and shrink the amplifier output footprint.
Separating the inductor and matching circuit onto opposite substrate sides reduces magnetic coupling and preserves RF module gain and noise figure.