Radiation Controlled Devices TRIZ Cases

A shaped light-shielding grid blocks high-angle light around PDAF pixels to cut sensing-pixel cross-talk and keep autofocus reception uniform.

A high-permittivity DCG capacitor boosts floating diffusion capacitance to improve conversion gain, signal-to-noise ratio, and dynamic range.

Pre-formed conductive pads enable partial backside etching after stacking, limiting etch damage and lowering wiring resistance.

A grid structure with a centralized round source follower improves photon capture, cuts noise interference, and speeds image sensor readout.

Separating APDs, quenching circuits, and processing circuits across three substrates enables denser pixels and more efficient signal handling.

Composite low-index and metal grid isolation with shifted color filters improves CMOS sensor quantum efficiency and edge-region uniformity.

An avoidance slot and filler settling boundary shift encapsulant stress away from the light-permeable sheet to prevent cracking.

A p-n junction channel and lightly doped absorption layer speed electron transfer while reducing dark current at the heterojunction interface.

Pre-formed attachment dams, through-vias, and encapsulation shrink KOZ while blocking moisture, cover tilt, and edge flare in image sensor packaging.

Air-grid voids and reinforcing pillars improve pixel isolation, cut optical crosstalk, and stabilize CMOS image sensor fabrication.

A nested large and small photoelectric region shares one micro-lens and color filter to enable HDR imaging with fewer artifacts and simpler fabrication.

Planarized metal inserts in deep trench isolation remove etch limits on diffusion structures, enabling higher quantum efficiency and optical isolation.

An embedded metal pad adds a parallel low-resistance current path in stacked dies, cutting IR drop without sacrificing interconnect density.

Different impurity profiles in pixel separation sections preserve pixel area while improving optical isolation, dark current, and saturated signal.

A higher-doped well between the optical interface and photodetector suppresses dark currents while supporting broader wavelength detection.

Plasma doping plus low-temperature annealing passivates CMOS image sensor trench sidewalls, cutting dark current without exceeding thermal budget.

Transverse layers and pillar arrays steer oblique light toward photodiodes, improving CMOS image sensor quantum efficiency and angular response.

Stacked diffraction and absorption layers improve color filtering, transmittance, and SNR in small-pixel solid-state image sensors.

A stacked dual-face sensor assembly uses a flexible circuit board to cut imaging components, reducing wearable weight and complexity.

A carbon-containing silicon nitride lateral pattern captures boundary electrons and avoids voids, cutting dark current in image sensors.

Stacked capacitor plates and diagonal vias preserve pixel capacitance as pixels shrink, improving image sensor dynamic range.

A trapezoidal pixel gate boosts full well capacity while limiting optical crosstalk through asymmetric width control in the substrate.

A single pixel combines visible photodiodes with resonant phase-change SWIR sensing to avoid separate sensors, cutting cost and NIR eye risk.

An image sensing chip is fixed inside a substrate through-opening with insulating support and wire bonding to cut camera module thickness.

An air-gap grid between color filters limits optical crosstalk in small pixels while preserving light sensitivity in dense image sensors.

An optical functional layer over meta-pillars cuts surface reflection and improves light transmission, contrast, and image quality.

A variable control gate raises photodiode isolation for autofocus and lowers it for imaging to preserve low-light response and signal linearity.

Shared transistors and a floating diffusion region preserve CMOS image sensor speed at high pixel density while limiting pixel crosstalk.

A higher-index deflection element in PDAF pixels redirects light to correct angle mismatch and preserve autofocus sensitivity as pixels shrink.

Non-conformal anti-reflective coating on meta-layer nano-structures cuts reflectivity and improves phase-tuned optical performance.

A backside trench capacitor linked by TSV expands full-well capacity and low-light SNR without shrinking photodiode area.

A multilayer trench isolation stack in a CMOS image sensor cuts optical cross-talk and improves light collection for better yield and image quality.

Diagonal and counter-diagonal photodiode binning balances image resolution in all directions while improving sampling and low-light quality.