A X-band broadband high-gain dual-linear polarization microstrip antenna array

Abstract

The present invention discloses an X-band broadband high-gain dual-linear polarization microstrip antenna array, belonging to the field of antenna technology. It includes, from top to bottom, a parasitic patch array, a radiating patch array, a coupling slot layer, a horizontal polarization feeding network, an upper metal floor, a vertical polarization feeding network, and a bottom metal floor. The coupling slot layer has an H-shaped coupling slot, and the horizontal polarization feeding network couples and feeds the radiating patch array through the slot, and the vertical polarization feeding network directly feeds the radiating patch array through a probe. The present invention designs two sets of 1-to-16 feeding networks in a limited space through a reasonable layout, and ensures that all branches of each set of feeding networks are of equal amplitude and phase, thereby realizing the dual-linear polarization characteristics of the array.

Description

Technical Field

[0001] The present invention relates to the field of antenna technology, and in particular to an X-band broadband high-gain dual-linear polarization microstrip antenna array. Background Art

[0002] With the development of satellite mobile communications, dual-polarization antenna systems have attracted more and more attention. At the same time, the receiving terminal has higher and higher requirements for low profile and high gain of antennas. Traditional reflector antennas and waveguide array antennas can no longer meet the above requirements.

[0003] Microstrip antennas have thin profiles, small volumes, light weights, low costs, can be easily placed on instrument panels, and can conform to the surfaces of carriers such as missiles and satellites. In particular, they can be easily integrated with feed networks and active devices. In the past two years, microstrip antennas have been increasingly widely used in a wide frequency range of about 100MHz to 100GHz with their unique advantages, such as satellite communications, radars, missile telemetry and remote control, weapon fuzes, environmental monitoring, remote sensing technology, biomedicine, and many portable radio devices. Microstrip antenna arrays have the technical characteristics of low profile, easy integration, lightweight, and easy conformality. However, traditional microstrip antennas usually have narrow bandwidths, low efficiency, and low gain. At the same time, due to the complexity of the feed network, it is difficult to realize dual-polarization microstrip antenna arrays. Summary of the invention

[0004] In view of this, the present invention provides an X-band broadband high-gain dual-linear polarization microstrip antenna array. It realizes the characteristics of broadband high-gain dual-linear polarization of the entire array through reasonable layout combined with different feeding forms and low-loss materials in a limited space, and has the characteristics of compact structure, good stability and high integration.

[0005] In order to achieve the above object, the technical solution adopted by the present invention is:

[0006] An X-band broadband high-gain dual-linear polarization microstrip antenna array, comprising a parasitic patch layer, an antenna layer, a feed layer and an SMA connector; the parasitic patch layer, the antenna layer and the feed layer are arranged in sequence from top to bottom;

[0007] The parasitic patch layer includes a first dielectric substrate as its main body, and a parasitic patch array consisting of 4×4 parasitic patches evenly arranged is provided on the lower surface of the first dielectric substrate;

[0008] The antenna layer includes a second dielectric substrate as its main body, and a radiation patch array composed of 4×4 radiation patches evenly arranged is provided on the upper surface of the second dielectric substrate; the radiation patches correspond to the parasitic patches one by one, and each radiation patch is located directly below the corresponding parasitic patch; and there is an air layer between the radiation patch and the parasitic patch;

[0009] The feeding layer includes a horizontal polarization feeding network layer and a vertical polarization feeding network layer from top to bottom; wherein the horizontal polarization feeding network layer includes a third dielectric substrate and a fourth dielectric substrate as its main body and arranged up and down, a metal plate is provided on the upper surface of the third dielectric substrate, coupling slots are provided on the metal plate, the coupling slots correspond to the radiation patches one by one, and each coupling slot is located directly below the corresponding radiation patch; a horizontal polarization feeding network is provided between the third dielectric substrate and the fourth dielectric substrate, and an upper metal floor is attached below the fourth dielectric substrate; the vertical polarization feeding network layer includes a fifth dielectric substrate and a sixth dielectric substrate as its main body and arranged up and down, a vertical polarization feeding network is provided between the fifth dielectric substrate and the sixth dielectric substrate; a bottom metal floor is attached below the sixth dielectric substrate;

[0010] A vertical metal probe is connected to the edge of each radiation patch, and the other end of the metal probe is connected to the vertical polarization feeding network;

[0011] The branch end of the horizontal polarization feeding network is perpendicular to the coupling slot; the combined end of the horizontal polarization feeding network and the vertical polarization feeding network are respectively connected to the inner conductors of two SMA connectors, and the outer conductors of the two SMA connectors are connected to the bottom metal floor.

[0012] Furthermore, the structure of the feeding slot is H-shaped, and the branch end of the horizontal polarization feeding network is perpendicular to the middle position of the H-shaped structure.

[0013] Furthermore, the thickness of the air layer is 2 mm to 3 mm.

[0014] Furthermore, a dielectric frame is provided between the parasitic patch layer and the antenna layer, and the air layer is a hollow area of ​​the dielectric frame.

[0015] The beneficial effects of the above technical solution of the present invention are:

[0016] 1. The present invention widens the relative bandwidth of the microstrip antenna array from the traditional 8% to 15% by loading the parasitic patch array; through multilayer board technology and the use of low-loss dielectric substrate materials, the efficiency of the patch antenna is increased from the traditional 70% or less to 80%, thereby achieving an increase in gain.

[0017] 2. The present invention designs two sets of 1-to-16 feeding networks in a limited space through reasonable layout, and ensures that all branches of each feeding network are of equal amplitude and phase, thus realizing the dual-linear polarization characteristics of the array.

[0018] 3. The present invention can also realize the function of dual circular polarization by changing the phase at the antenna array interface. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 is an exploded diagram of the microstrip antenna array in an embodiment of the present invention.

[0020] Figure 2 yes Figure 1 Schematic diagram of the structure of the first dielectric substrate and the parasitic patch array.

[0021] Figure 3 yes Figure 1 Schematic diagram of the structure of the medium frame.

[0022] Figure 4 yes Figure 1 Schematic diagram of the structure of the middle radiation patch array and the second dielectric substrate.

[0023] Figure 5 yes Figure 1 Schematic diagram of the structure of the third dielectric substrate and the coupling gap layer.

[0024] Figure 6 yes Figure 1 Schematic diagram of the structure of the fourth dielectric substrate and the horizontally polarized feeding network.

[0025] Figure 7 yes Figure 1 Schematic diagram of the structure of the fifth dielectric substrate and the vertical polarization feeding network.

[0026] Figure 8 4 is a standing wave curve diagram of an embodiment of the present invention.

[0027] Fig. 9 It is the directional diagram of the horizontal polarization azimuth plane and elevation plane at 7.25 GHz according to the embodiment of the present invention.

[0028] Fig.10 It is the directional diagram of the vertical polarization azimuth plane and elevation plane at 7.25 GHz according to the embodiment of the present invention.

[0029] Fig.11 It is the directional diagram of the horizontal polarization azimuth plane and elevation plane at 8.4 GHz according to the embodiment of the present invention.

[0030] Fig.12 It is the directional diagram of the vertical polarization azimuth plane and elevation plane at 8.4 GHz according to the embodiment of the present invention.

[0031] In the figure: 1. first dielectric substrate, 2. parasitic patch array, 3. dielectric frame, 4. radiation patch array, 5. second dielectric substrate, 6. metal plate, 7. third dielectric substrate, 8. horizontal polarization feeding network, 9. fourth dielectric substrate, 10. upper metal floor, 11. fifth dielectric substrate, 12. vertical polarization feeding network, 13. sixth dielectric substrate, 14. lower metal floor, 15. metal probe, 16 first welding hole, 17. second welding hole. DETAILED DESCRIPTION

[0032] The present invention is further described below in conjunction with the accompanying drawings and specific embodiments.

[0033] Reference Figure 1 to Figure 7 , an X-band broadband high-gain dual-linear polarization microstrip antenna array, which comprises, from the top layer downward: a first dielectric substrate, a parasitic patch array, a dielectric frame, a radiation patch array, a second dielectric substrate, a coupling slot layer, a third dielectric substrate, a horizontally polarized feeding network, a fourth dielectric substrate, an upper metal floor, a fifth dielectric substrate, a vertically polarized feeding network, a sixth dielectric substrate, a bottom metal floor and an SMA connector.

[0034] In the parasitic patch array, each parasitic patch is completely identical, and the parasitic patch array is composed of 4×4 units, a total of 16 units, and is etched from a single panel with the first dielectric substrate.

[0035] In the radiation patch array, each radiation patch is completely identical, and the radiation patch array is composed of 4×4 units with a total of 16 units, and is etched from a double-sided board with the second dielectric substrate and the coupling gap layer.

[0036] The remaining dielectric substrates play a supporting and isolating role for the radiation patch array, the coupling slot layer, the horizontal polarization feeding network, the upper metal floor, the vertical polarization feeding network, and the bottom metal floor.

[0037] The radiation patch array, the second dielectric substrate, the coupling slot layer, the third dielectric substrate, the horizontal polarization feeding network, the fourth dielectric substrate, the upper metal floor, the fifth dielectric substrate, the vertical polarization feeding network, the sixth dielectric substrate, and the bottom metal floor are finally integrated into one through multi-layer board technology. This structure ensures the stability and high integration of the antenna.

[0038] The dielectric frame serves to isolate the parasitic patch array from the radiating patch array. In the radiating patch array, each radiating patch on the upper layer corresponds to a parasitic patch at a certain distance, and the radiating patch array unit corresponds to the parasitic patch array unit one by one. The function of this structure is to effectively broaden the bandwidth of the microstrip antenna while improving the gain of the antenna.

[0039] Each radiating patch in the radiating patch array is fed by two feeding modes: slot coupling feeding and direct feeding.

[0040] The two sets of feeding networks are located in different layers, and both are 1-to-16 branch networks with equal amplitude and phase, and their function is to distribute energy equally to each radiating patch unit. The branch end of the horizontal polarization feeding network is disconnected, and the radiating patch is coupled and fed through the upper coupling slot layer to achieve horizontal polarization. The end of the vertical polarization feeding network is connected to the radiating patch through a metal probe, and it is directly fed to achieve vertical polarization.

[0041] There are two RF connectors in total, which are respectively connected to the combining ends of two sets of feeding networks through the inner conductors of the connectors, and the outer conductors of the connectors are connected to the bottom metal floor.

[0042] The structure of the X-band broadband high-gain dual-polarized microstrip antenna array is as Figure 1 shown, from top to bottom in sequence: the first dielectric substrate 1, the parasitic patch array 2, the dielectric frame 3, the radiating patch array 4, the second dielectric substrate 5, the coupling slot layer, the third dielectric substrate 7, the horizontal polarization feeding network 8, the fourth dielectric substrate 9, the upper metal floor 10, the fifth dielectric substrate 11, the vertical polarization feeding network 12, the sixth dielectric substrate 13, and the lower metal floor 14.

[0043] The parasitic patch array is located on the lower surface of the first dielectric substrate. The material of the first dielectric substrate is Arlon CLTE-XT, and the dielectric constant is 2.95. As Figure 2 shown, the size of the first dielectric substrate is 100 mm × 100 mm, the thickness is 0.508 mm, the size of the parasitic patch is 12.6 mm × 10.6 mm, and the element spacing is 25 mm.

[0044] The material of the dielectric frame is FR4, and the dielectric constant is 4.4. As Figure 3 shown, its size is 100 mm × 100 mm, the thickness is 2 mm, and the overall structure is a "field" character structure.

[0045] The radiating patch array, the second dielectric substrate and the coupling slot layer are formed by double-sided board etching. The material of the second dielectric substrate is Arlon CLTE-XT, and the dielectric constant is 2.95. As Figure 4 、 Figure 5 shown, the size of the second dielectric substrate is 100 mm × 100 mm, the thickness is 1.52 mm; the element size of the radiating patch array is 10 mm × 5.6 mm, the element spacing is 25 mm; the coupling slot is an H-shaped slot. The dielectric substrate is perforated, namely the first welding hole 16 and the second welding hole 17, which facilitate the welding of the inner conductor of the RF connector to the in-layer feeding network. At the same time, in order to avoid the vertical polarization network directly feeding the radiating patch through the probe and contacting the metal of the coupling slot layer, the coupling slot layer is perforated near the probe, removing part of the metal to form a metal-free round hole.

[0046] The materials of the third dielectric substrate and the fourth dielectric substrate are Arlon CLTE-XT, the dielectric constant is 2.95, the sizes are both 100 mm × 100 mm, and the thicknesses are both 1 mm. The horizontal polarization feeding network is designed as a 1-to-16 equal-amplitude and in-phase network, with the end open-circuited, and the energy is coupled to the radiating patches on the upper side of the second dielectric substrate through the Figure 5 H-shaped slot in it.

[0047] The fifth dielectric substrate and the sixth dielectric substrate are made of ArlonCLTE-XT, with a dielectric constant of 2.95, a size of 100mm×100mm, and a thickness of 1mm. The vertical polarization feeding network is designed as a 1:16 equal-amplitude in-phase network, and the end directly feeds the radiation patch through a metal probe.

[0048] The entire array is Figure 1 As shown, Figure 2 to Figure 7 The various parts are integrated into one through multi-layer board technology. Figure 8 It can be seen that the antenna has a standing wave ratio of less than 2 in the frequency band of 7.25GHz to 8.4GHz.

[0049] The antenna array produced in this embodiment was tested in a microwave darkroom, and the test results are shown in Figures 9 to 12. It can be seen that the antenna array produced in this embodiment has good symmetry, the gain is greater than 17.5dBi at the lowest frequency of 7.25GHz, and the efficiency is as high as 80%.

[0050] The above description is only a preferred embodiment of the present invention. Any modifications made within the scope of the claims of the present invention should be equally changed and fall within the scope of the claims of the present invention.

Claims

1. An X-band broadband high-gain dual-linear polarization microstrip antenna array, comprising a parasitic patch layer, an antenna layer, a feed layer and an SMA connector; characterized in that: The parasitic patch layer, antenna layer and feed layer are arranged in sequence from top to bottom; The parasitic patch layer comprises a first dielectric substrate (1) as a main body thereof, and a parasitic patch array (2) composed of 4×4 parasitic patches evenly arranged is provided on the lower surface of the first dielectric substrate; The antenna layer comprises a second dielectric substrate (5) as its main body, and a radiation patch array (4) composed of 4×4 radiation patches evenly arranged is provided on the upper surface of the second dielectric substrate; the radiation patches correspond to the parasitic patches one by one, and each radiation patch is located directly below the corresponding parasitic patch; and an air layer is provided between the radiation patches and the parasitic patches; The feeding layer comprises, from top to bottom, a horizontal polarization feeding network layer and a vertical polarization feeding network layer in sequence; wherein the horizontal polarization feeding network layer comprises a third dielectric substrate and a fourth dielectric substrate as its main body and arranged up and down, a metal plate is provided on the upper surface of the third dielectric substrate, a coupling slot is provided on the metal plate (6), the coupling slot and the radiation patch correspond one to one, and each coupling slot is located directly below the corresponding radiation patch; a horizontal polarization feeding network (8) is provided between the third dielectric substrate (7) and the fourth dielectric substrate (9), and an upper metal floor (10) is attached below the fourth dielectric substrate; the vertical polarization feeding network layer comprises a fifth dielectric substrate (11) and a sixth dielectric substrate (13) as its main body and arranged up and down, a vertical polarization feeding network (12) is provided between the fifth dielectric substrate and the sixth dielectric substrate; and a lower metal floor (14) is attached below the sixth dielectric substrate; A vertical metal probe (15) is connected to the edge of each radiation patch, and the other end of the metal probe is connected to a vertical polarization feeding network; The branch end of the horizontal polarization feeding network is perpendicular to the coupling slot; the combined ends of the horizontal polarization feeding network and the vertical polarization feeding network are respectively connected to the inner conductors of two SMA connectors, and the outer conductors of the two SMA connectors are connected to the bottom metal floor; the coupling slot has an H-shaped structure, and the branch end of the horizontal polarization feeding network is perpendicular to the middle position of the H-shaped structure; The thickness of the air layer is 2 mm to 3 mm.

2. The X-band broadband high-gain dual-linear polarization microstrip antenna array according to claim 1, characterized in that: A dielectric frame (3) is provided between the parasitic patch layer and the antenna layer, and the air layer is a hollowed-out area of ​​the dielectric frame.

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