A detection system with dual built-in composite structure

Abstract

This invention relates to a dual-embedded composite detection system, belonging to the field of electron microscopy technology. It effectively combines electron detection, EDS detection, and fluorescence detection, achieving simultaneous detection of the same location on the sample by multiple detectors, and efficiently collecting signals to obtain high-quality image information. The system includes: an electron source, an electron accelerating electrode, an objective lens, an EDS detector, a direct electron detector, a sample, a sample stage, and a control unit. Both the EDS detector and the direct electron detector are obliquely inserted inside the objective lens, with their probes close to the objective lens's detection port. The sample stage, the EDS detector, the direct electron detector, the electron source, and the objective lens are all connected to the control unit. The objective lens has a daguerreotype on its internal pole piece, and reflective cones are located at the bottom ends of both the inner and outer annular walls of the objective lens's detection port.

Description

Technical Field

[0001] This invention relates to the field of electron microscopy, and more particularly to a detection system with a dual built-in composite structure. Background Technology

[0002] With the continuous development of modern science and technology, the application of electron microscopy has become increasingly widespread. As the "scientific eye" for observing the microscopic world, the high resolution and intuitiveness of the electron microscope are irreplaceable by any other scientific instrument. Electron microscopy has played a remarkable role in the development of medicine, biology, physics, chemistry, metallurgy, and materials science, and has become an indispensable routine instrument in research work in many disciplines. Electron microscopy is mainly used for observing the surface morphology of samples at the nanoscale. Scanning electron microscopy (SEM) can not only observe the tissue morphology of sample surfaces, but its functionality can also be further expanded by using different accessory devices such as EDS, WDS, and EBSD. For example, using EDS auxiliary equipment, SEM can analyze the chemical composition of micro-areas, which is particularly important in the field of failure analysis research.

[0003] Energy dispersive spectrometers (EDS) are used to analyze the elemental composition and content of micro-areas in materials, in conjunction with scanning electron microscopes and transmission electron microscopes. While side-mounted X-ray detectors are used, these detectors have a small solid angle for receiving X-ray signals, resulting in low collection efficiency and an inability to acquire high-velocity X-ray images. Although using multiple X-ray detectors can increase the solid angle of X-ray detection, the implementation method is cumbersome and space-consuming.

[0004] Cathodoluminescence (CL) systems are typically integrated into scanning electron microscopes (SEMs) or transmission electron microscopes (TEMs) to combine morphological observation, structural and compositional analysis with cathodoluminescence spectroscopy, achieving full-spectrum fluorescence scanning imaging. The electron beam used for cathodoluminescence excitation has a very small spot size and high energy; compared to photoluminescence (PL), cathodoluminescence offers higher spatial resolution, higher excitation energy, a wider spectral range, and greater excitation depth, and enables full-spectrum fluorescence scanning imaging. The combination of cathodoluminescence systems and SEMs allows for the combined morphological observation, structural and compositional analysis, and cathodoluminescence spectroscopy of semiconductor materials and devices, as well as fluorescent materials (geological and archaeological materials), at the small scale, finding wide application in semiconductors, microelectronics, materials science, physics, geology, and archaeology. Cathodoluminescence technology is particularly valuable in the study of the luminescent properties and electronic structure of fluorescent materials such as semiconductor quantum dots and quantum wires at the micron and nanoscale. There are currently many methods for detection, such as: horizontal insertion: the advantage is that it has a high-efficiency condenser and light guide, and the collection efficiency is high. The disadvantage is that it takes up space, which makes it impossible to use other accessories such as BSE at the same time; angled insertion: saves space and is suitable for simultaneous collection of CL and SE.

[0005] Different accessory devices can obtain different microscopic morphological information. For comprehensive analysis, traditional operations require the electron beam to repeatedly collide with the same location on the sample, and then collect the information separately through detectors. This operation is complex and time-consuming, and the repeated collision of the electron beam with the same location is very likely to damage the sample, resulting in inaccurate subsequent data acquisition and making further data combination analysis impossible.

[0006] Therefore, it is necessary to study a new detection system with a dual-embedded composite structure to address the shortcomings of existing technologies and to solve or mitigate one or more of the aforementioned problems. Summary of the Invention

[0007] In view of this, the present invention provides a detection system with a dual built-in composite structure, which can effectively combine a direct electron detector, an EDS detector, an SE detector, and a CL fluorescence detector. It can detect the same position of the sample with multiple detectors simultaneously with only one collision, and efficiently collect signals to obtain high-quality image information. This avoids complex and time-consuming operation, and eliminates the need for repeated collisions of the electron beam with the same position, thereby avoiding damage to the sample surface, inaccurate information acquisition, and poor image quality.

[0008] This invention provides a detection system with a dual built-in composite structure, the system comprising: an electron source, an electron accelerating electrode, an objective lens, an EDS detector, a direct electron detector, a sample, a sample stage, and a control unit;

[0009] The electron source is located at the top center, the electron accelerating electrode is located below the electron source, the objective lens is located below the electron accelerating electrode, and the sample is located below the objective lens; the electron beam generated by the electron source passes through the electron accelerating electrode and the objective lens in sequence before reaching the surface of the sample;

[0010] Both the EDS detector and the direct electron detector are installed inside the objective lens in an oblique manner, and the probes of both the EDS detector and the direct electron detector are close to the detection port of the objective lens.

[0011] The sample is placed on the sample stage; the sample stage, the EDS detector, the direct electron detector, the electron source, and the objective lens are all connected to the control unit.

[0012] In addition to the aspects and any possible implementations described above, a further implementation is provided in which the internal pole shoe of the objective lens is provided with a daguerreotype, and the bottom ends of both the inner and outer annular walls of the objective lens probe port are provided with reflective cones.

[0013] In addition to the aspects and any possible implementations described above, a further implementation is provided in which the reflecting cone disposed at the bottom end of the inner pole shoe of the objective lens probe port includes a plate-shaped segment and a cone-shaped segment, the reflecting cone disposed at the bottom end of the outer pole shoe is cone-shaped, and the bottom ends of the two reflecting cones are at the same height.

[0014] In addition to the aspects described above and any possible implementations, a further implementation is provided in which the plate segment is vertically arranged.

[0015] In addition to the aspects and any possible implementations described above, a further implementation is provided in which the tail end of the EDS detector and / or the direct electron detector is connected to a telescopic structure and moves obliquely following the telescopic movement of the telescopic structure.

[0016] The telescopic structure is connected to the control unit.

[0017] In addition to the aspects and any possible implementations described above, a further implementation is provided in which the EDS detector is a detector equipped with a collimator and an electron trap, both of which are disposed at the probe end, with the collimator located at the outermost end.

[0018] The front end of the EDS detector is provided with a reflective material film capable of reflecting electrons.

[0019] In addition to the aspects described above and any possible implementation, a further implementation is provided in which the front end of the direct electron detector is provided with a grid on which a voltage of +250V to 350V is applied.

[0020] In addition to the aspects described above and any possible implementations, a further implementation is provided in which the distance between the objective lens and the upper surface of the sample is within 5 mm.

[0021] In addition to the aspects and any possible implementations described above, a further implementation is provided in which the system further includes an SE detector disposed near the upper end of the inner ring sidewall of the objective lens;

[0022] The SE detector is connected to the control unit.

[0023] In addition to the aspects and any possible implementations described above, a further implementation is provided in which the system further includes a CL fluorescence detector disposed above the sample and below the objective lens;

[0024] The CL fluorescence detector is connected to the control unit.

[0025] In addition to the aspects and any possible implementations described above, an implementation is further provided in which the datta grade material is ITO, MgO, or Al2O3.

[0026] Compared with the prior art, one of the above technical solutions has the following advantages or beneficial effects: In the prior art, it is difficult to combine BSE detection and EDS detection at the same time, and it will occupy a lot of space, which will increase the distance between the objective lens and the sample surface, i.e., the resolving distance; while the present invention inserts the EDS detector obliquely into the objective lens, and a direct electron detector is also installed inside the objective lens, which increases the space utilization and improves the collection efficiency; the sample stage of the present invention can be infinitely close to the objective lens pole piece, which reduces the resolving distance and greatly improves the image resolution;

[0027] Another technical solution in the above-mentioned technical solution has the following advantages or beneficial effects: In this invention, after the electrons enter the objective lens, they turn under the action of its internal magnetic field and will not directly hit the EDS detector, thus affecting the signal. They will be more easily collected by the direct electron detector or hit the detector stage, multiplying more electrons, and then being collected by the direct electron detector, greatly improving the amount of electrons collected and obtaining higher quality images.

[0028] Another technical solution in the above-mentioned technical solution has the following advantages or beneficial effects: spatial distribution is very important for each detector. If the electronic detector needs to achieve extremely high resolution, the resolution distance needs to be reduced, which restricts the setting of other detectors. However, a large part of the space inside the objective lens can be utilized. This invention can achieve the function of using multiple detectors at the same time by reasonably assembling detectors inside the objective lens.

[0029] Another technical solution in the above-mentioned technical solution has the following advantages or beneficial effects: The present invention obliquely inserts a direct electron detector inside the objective lens to collect secondary electrons inside the objective lens, thereby increasing the collection efficiency and improving the quality of the acquired image, thus solving the problem of secondary diffraction of electrons affecting the quality of the acquired image and producing artifacts.

[0030] Of course, any product implementing this invention does not necessarily need to achieve all of the technical effects described above at the same time. Attached Figure Description

[0031] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1 This is a schematic diagram of the overall structure of the detection system with a dual built-in composite structure provided in Embodiment 1 of the present invention;

[0033] Figure 2 This is a schematic diagram of the overall structure of the detection system with a dual built-in composite structure provided in Embodiment 2 of the present invention;

[0034] Figure 3 This is a schematic diagram of the overall structure of the detection system with a dual built-in composite structure provided in Embodiment 3 of the present invention;

[0035] Figure 4 This is a schematic diagram of the electronic motion trajectory provided in Embodiment 1 of the present invention;

[0036] Figure 5 This is a schematic diagram of the motion trajectory of X-rays and CL fluorescence provided in Embodiment 1 of the present invention;

[0037] Figure 6 This is a schematic diagram of the electronic motion trajectory provided in Embodiment 2 of the present invention;

[0038] Figure 7 This is a schematic diagram of the motion trajectory of X-rays and CL fluorescence provided in Embodiment 2 of the present invention.

[0039] In the figure:

[0040] 1. Electron source; 2. Electron accelerating electrode; 3. Electron beam; 4. Objective lens; 5. SE detector; 6. Objective lens coil; 7. Direct electron detector; 8. EDS detector; 9. Grating; 10. CL fluorescence detector; 11. Sample; 12. Denier; 13. Reflection cone; 14. Deflection coil. Detailed Implementation

[0041] To better understand the technical solution of the present invention, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0042] It should be understood that the described embodiments are merely some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0043] To address the shortcomings of existing technologies, this invention provides a detection system with a dual-built-in composite structure. This system inserts the EDS detector obliquely into the objective lens, increasing space utilization and allowing the objective lens to approach the sample surface more closely, thereby significantly improving image resolution. The built-in EDS detector frees up external space, allowing for better installation of other detectors and enabling simultaneous multi-detector detection, thus improving collection efficiency and quality.

[0044] This invention also incorporates a direct electron detector (EMT / MCP+PIN) inside the objective lens to collect secondary electrons within the lens. Due to the extremely strong scattering ability of electrons, secondary diffraction and other phenomena can easily occur, affecting the signal collection of other detectors, such as the EDS detector. Electron collisions can cause signal artifacts, impacting data analysis results. This invention uses an obliquely inserted direct electron detector (EMT / MCP+PIN) inside the objective lens to collect secondary electrons, increasing collection efficiency and improving image quality. A grid with an adjustable potential is installed at the front end of the direct electron detector, allowing secondary electrons and BSE to pass through and be collected, while preventing electrons from escaping and returning to the objective lens. This grid can also detect and collect electrons emitted after darad multiplication. Secondary electrons passing through the grid are directly multiplied by the EMT (MCP) and absorbed by the PIN. The MCP is simpler to assemble, thinner, and has a transmittance of 65%; the EMT has even higher transmittance.

[0045] The aforementioned dart stage is located on the internal pole piece of the objective lens. Electrons striking the gold or highly reflective metal plate are reflected onto the dart stage. Due to the high energy of BSE (bulk electrons), 6-10 secondary electrons are generated by the dart stage, which are then collected by a direct electron detector, increasing collection efficiency and improving image quality. The dart stage is made of a high-SE-yield material, such as ITO, MgO, or Al2O3.

[0046] This structure allows for the simultaneous use of direct electron detectors, EDS, CL, and SE detectors, enabling the acquisition of multiple data points at the same location in a single operation. This improves acquisition efficiency and yields high-quality images. Furthermore, it avoids the risk of repeated electron beam impacts on the same location, which could damage the sample acquisition site, leading to inaccurate subsequent data or the creation of structures not present in the sample, thus complicating subsequent image analysis.

[0047] Example 1:

[0048] like Figure 1 , 4 As shown in Figure 5, the present invention provides an electron microscope comprising an electron source 1, an electron accelerating electrode 2, an electron beam 3, an objective lens 4, an SE detector 5, an objective lens coil 6, a direct electron detector 7, an EDS detector 8, a grating 9, a CL fluorescence detector 10, a sample 11, a denier 12, a reflection cone 13, and a deflection coil 14.

[0049] Electron source 1 is located directly above and is used to generate electron beam 3. Electron accelerating electrode 2 is located below electron source 1. Electron accelerating electrode 2 is the anode and is positioned along the electron beam emission direction to create an electric field, increasing the speed of the electron beam. Objective lens 4 is located below electron accelerating electrode 2 and is used to focus the initial electron beam onto the sample to form a converging beam spot. The objective lens can also be an immersion lens or a non-immersion lens.

[0050] The CL fluorescence detector 10 is located below the objective lens 4 and above the sample 11, and is used to collect the fluorescence signal generated by the electron beam bombardment. The SE detector 5 is located on the outer wall inside the objective lens, the sample 11 is located on the bottom sample stage, and the electron beam 3 acts vertically on the upper surface of the sample 11.

[0051] The objective lens 4 of this invention is used to focus an electron beam onto the sample 11 to be tested. It consists of a magnetic lens and an electric lens, and an objective lens coil 6 is located in the upper part of the inner cavity of the objective lens housing. Below the objective lens coil 6, the direct electron detector 7 and the EDS detector 8 of this invention are located, both of which are obliquely inserted inside the objective lens. An opening is provided on the outer wall of the objective lens 4, through which the direct electron detector 7 and the EDS detector 8 are inserted into the objective lens 4 at an angle, with the direct electron detector 7 positioned above the EDS detector 8. The front ends (i.e., signal acquisition ends) of the direct electron detector 7 and the EDS detector 8 are aligned with the detection port at the bottom inner side of the objective lens, while the rear ends are located outside the objective lens. A sealing ring is provided at the opening on the side wall of the objective lens 4 to achieve a sealed connection between the side wall of the objective lens and the EDS detector 8 or the direct electron detector 7. The rear ends of the direct electron detector 7 and the EDS detector 8 can be connected to a telescopic structure, and the movement of the telescopic structure drives the detector to change and adjust its position. The telescopic structure is fixedly connected to the outer wall of the objective lens to ensure its stability during operation. The telescopic structure can be operated using a high-precision servo motor; alternatively, it can be omitted, with the direct electron detector 7 and EDS detector 8 directly fixed inside the objective lens for EDS detection. Multiple openings can be present on the outer wall of the objective lens 4, and multiple (two or more) direct electron detectors 7 and EDS detectors 8 can also be installed, with each opening corresponding to one of the detectors. The telescopic structure is connected to a control unit, which controls its telescopic movement, thereby causing the direct electron detector 7 and EDS detector 8 to move obliquely, adjusting the distance between the detectors and the objective lens observation port. The control unit also controls the movement of the sample stage, enabling the sample on it to rise, fall, and move in two dimensions in the horizontal plane.

[0052] Furthermore, the objective lens 4 of this invention has reflective cones 13 on both the inner and outer annular walls of its detection port. The reflective cones 13 are conical and extend downward along the end faces of the annular walls. The pole piece surface inside the detection port of the objective lens 4 is provided with a dapplès stage 12. Electrons generated after the electron beam 3 bombards the sample surface hit the reflective cones 13 and are then reflected onto the dapplès stage 12, or directly hit the dapplès stage 12. The dapplès stage 12 generates multiple secondary electrons after being bombarded by one electron. These secondary electrons are collected by the direct electron detector 7 inserted inside the objective lens for analysis.

[0053] As a preferred option, the objective lens 4 is positioned within 5 mm of the sample's upper surface. This reduced resolving distance significantly improves the detection resolution. During use, the operating current of the objective lens 4 can be adjusted via the control unit to regulate the focal length, and the overall resolution can be further adjusted by changing the distance between the probe of the EDS detector 8 and the sample surface. The deflection coil 14 is part of the objective lens.

[0054] The objective lens in this embodiment is a non-immersion lens structure. Objective lens 4 includes an objective lens body, an objective lens coil, and a deflection coil; the objective lens coil is disposed at the top of the internal cavity of the objective lens body; the deflection coil is disposed on the outer wall of the inner ring of the objective lens body.

[0055] During operation, the accelerated electron beam 3 enters the objective lens 4 along the principal optical axis, and after passing through the objective lens 4, it converges onto the sample 11, generating backscattered electrons (BSE), secondary electrons, X-rays, and CL fluorescence.

[0056] Backscattered electrons (BSE) generate a large amount of BSE through ejection and acceleration. A portion of these BSE electrons at certain angles pass through the objective lens pole shoe and are received by the direct electron detector 7. Another portion of BSE electrons at certain angles collide with the reflector cone 13 below the pole shoe, and are reflected back into the interior space of the objective lens 4, where they are again received by the direct electron detector 7. Some also collide with the dara stage, an electron-sensitive plate. When bombarded by high-energy electrons such as BSE electrons, it emits a large number (at least twice the normal number) of secondary electrons, causing a cascade amplification effect. Thus, BSE electrons entering the objective lens collide with the dara stage, generating 6-10 secondary electrons, which are then reflected back and finally collected by the direct electron detector 7.

[0057] The direct electron detector 7 has a grating 9 at its front end. The potential of the grating 9 is adjustable. When a voltage of +250V to +350V is applied to it, secondary electrons scattered in all directions are attracted by the electric field, changing their original trajectories and being received by the detector. This installation method makes efficient use of space and allows for the collection of more secondary electrons and BSE, improving detection efficiency, obtaining higher quality image data, and facilitating simultaneous use with other detectors for material property analysis. Secondary electrons passing through the grating are directly multiplied by the EMT (MCP) and absorbed through PIN diodes. The MCP is simpler to assemble, thinner, and has a transmittance of 65%; the EMT has higher transmittance. Both types of electron multiplier tubes can be selected according to requirements.

[0058] The X-rays generated when the electron beam strikes the same location on the sample surface enter the objective lens and are received by the EDS detector. A highly reflective material is located at the front end of the EDS detector, positioned on the outer end face of the collimator. This material serves two purposes: first, it blocks electrons from colliding with the EDS detector and creating artifacts that could affect image quality; second, it reflects electrons that do collide with the surface. The highly reflective material can be any one or more of Au, Pt, Ag, BN, and diamond, and can be applied as a coating to the front end face of the detector. Furthermore, after entering the objective lens, electrons are bent by the magnetic field, so most electrons do not directly collide with the EDS detector. The presence of the highly reflective material further ensures that these electrons do not collide with the EDS detector, thus improving image quality.

[0059] As a further implementation, the fluorescence generated when the electron beam strikes the same location on the sample surface is received by a CL fluorescence detector 10, which is arranged in a horizontally inserted manner on the outer ring, thus achieving fluorescence detection. A three-color filter can be added to the front end of the CL fluorescence detector. After the fluorescence is collected by the focusing system, it is separated by the three-color filter, then amplified and processed, and finally synthesized into a color image by software in the control unit. The number of CL fluorescence detectors is ≥1.

[0060] As a further implementation, secondary electrons generated when the electron beam hits the same location on the sample surface are accelerated upwards by an electric field, then continue to rise in a loop under the influence of a magnetic field generated by a deflector before being received by an SE detector. The number of SE detectors is ≥1.

[0061] Ultimately, multiple data acquisitions at the same location in a single operation improve acquisition efficiency and yield high-quality images. Furthermore, it avoids the risk of repeated electron beam impacts on the same location, which could damage the sample acquisition site, leading to inaccurate subsequent data or the creation of structures not present in the sample, thus increasing the difficulty of later image analysis.

[0062] Example 2:

[0063] like Figure 2 , 6 As shown in Figure 7. The difference between this embodiment and Embodiment 1 is that the reflecting cone located at the lower end of the inner ring wall of the objective lens probe port is a composite structure, which includes a vertically arranged plate-shaped segment and a conical segment. The reflecting cone located at the lower end of the outer ring wall of the objective lens probe port only includes the conical segment (i.e., the same as the two reflecting cones in Embodiment 1), so that the bottoms of the reflecting cones on the inner and outer ring walls at the objective lens probe port are on the same horizontal line, that is, they have the same height.

[0064] In this embodiment, the objective lens is an immersion lens structure.

[0065] Example 3:

[0066] like Figure 3 As shown, the difference between this embodiment and Embodiment 2 is that the CL fluorescence detector 10 is installed at an angle. The angled installation method saves more space than the horizontal installation method. Preferably, the angle of the angled installation is the same as the outer wall of the bottom shell of the objective lens, i.e., the two are parallel.

[0067] The above provides a detailed description of a dual-embedded composite structure detection system provided in the embodiments of this application. The descriptions of the embodiments above are merely for the purpose of helping to understand the method and core ideas of this application; furthermore, those skilled in the art will recognize that, based on the ideas of this application, there will be changes in specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.

[0068] It should also be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a product or system comprising a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a product or system. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the product or system including said element. "Substantially" means within an acceptable margin of error, indicating that a person skilled in the art can resolve the technical problem and substantially achieve the technical effect within a certain margin of error.

[0069] The terminology used in the embodiments of this invention is for the purpose of describing particular embodiments only and is not intended to limit the invention. The singular forms “a,” “the,” and “the” used in the embodiments of this invention and the appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise. In this application, the terms “upper,” “lower,” “left,” “right,” “inner,” “outer,” “middle,” “lateral,” and “vertical,” etc., indicate orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings. Some of the above terms may also be used to indicate other meanings besides orientation or positional relationships; for example, the term “upper” may in some cases indicate a dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this application according to the specific circumstances. The term “and / or” used herein is merely a description of the association relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, and B alone. Additionally, the character “ / ” in this document generally indicates that the preceding and following related objects have an “or” relationship.

Claims

1. A dual built-in composite structure detection system, characterized by, The system comprises an electron source, an electron accelerating electrode, an objective lens, an EDS detector, a direct electron detector, a sample, a sample stage and a control unit; The electron source is arranged at the top center, the electron accelerating electrode is arranged below the electron source, the objective lens is arranged below the electron accelerating electrode, and the sample is arranged below the objective lens; the electron beam generated by the electron source passes through the electron accelerating electrode and the objective lens in turn and reaches the surface of the sample; The EDS detector and the direct electron detector are arranged in an oblique insertion manner inside the objective lens, and the probes of the EDS detector and the direct electron detector are close to the detection port of the objective lens; The sample is arranged on the sample stage; the sample stage, the EDS detector, the direct electron detector, the electron source and the objective lens are connected with the control unit; A punch stage is arranged on the inner pole piece of the objective lens, the bottom end of the inner pole piece of the detection port of the objective lens is provided with a first reflection cone, and the bottom end of the outer pole piece of the detection port of the objective lens is provided with a second reflection cone; The first reflection cone comprises a plate-shaped section and a conical section, the second reflection cone is conical, and the bottom ends of the first reflection cone and the second reflection cone are at the same height; The tail end of the EDS detector and / or the direct electron detector is connected with a telescopic structure and is obliquely displaced following the telescopic action of the telescopic structure; The telescopic structure is connected with the control unit; The EDS detector is provided with a collimator and an electron trapping well, and the collimator and the electron trapping well are arranged at the probe end, and the collimator is located at the outermost end; The front end of the EDS detector is provided with a reflection material film capable of reflecting electrons.

2. The dual-in-place composite structure's probing system of claim 1, wherein, The plate-shaped section is arranged vertically.

3. The dual-in-place composite structure's probing system of claim 1, wherein, The front end of the direct electron detector is provided with a grid, and a voltage of +250V-350V is applied to the grid.

4. The dual-in-place composite structure's probing system of claim 1, wherein, The distance between the objective lens and the upper surface of the sample is within 5mm.

5. The dual-in-place composite structure's probing system of claim 1, wherein, The system further comprises an SE detector arranged at the near upper end of the inner ring sidewall of the objective lens; The SE detector is connected with the control unit.

6. The dual-in-place composite structure's probing system of claim 1, wherein, The system further comprises a CL fluorescent detector arranged above the sample and below the objective lens; The CL fluorescent detector is connected with the control unit.

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