Method and device for controlling the amount of charge of a single crystal furnace

Abstract

The embodiment of the present application discloses a single crystal furnace feeding quantity control method and device, a first weight of polysilicon raw materials in a crucible in a single crystal furnace is obtained; if it is monitored that a material cylinder completely enters a sub-chamber of the single crystal furnace, a reading of a weight indicator located at a pulling head of the single crystal furnace is read; according to the first weight, the reading and a weight of an empty material cylinder, a total weight of the polysilicon raw materials in the crucible and the polysilicon raw materials in the material cylinder at a current time is determined; if the total weight is less than or equal to a maximum loading weight of the crucible, the polysilicon raw materials in the material cylinder are added into the crucible, and the step of obtaining the first weight of the polysilicon raw materials in the crucible in the single crystal furnace is returned to be executed; if the total weight is greater than the maximum loading weight of the crucible, an alarm information is outputted and the polysilicon raw materials in the material cylinder are prohibited to be added into the crucible. The present application avoids the polysilicon raw materials in the crucible from being overweight, and ensures production safety.

Description

Technical Field

[0001] This application relates to the field of control technology, and more specifically, to a method and apparatus for controlling the amount of material fed into a single crystal furnace. Background Technology

[0002] In the growth process of semiconductor silicon single crystal, the first step is to load polycrystalline silicon raw material into a crucible (such as a quartz crucible). Then, in a single crystal furnace, under the protection of an inert gas, the polycrystalline silicon raw material is melted by heating it through a heater in a hot zone. The process includes temperature stabilization, crystal pulling, shoulder formation, equal diameter formation, tailing, and cooling. Finally, a single crystal silicon rod is pulled.

[0003] In the process of growing monocrystalline silicon, after the bulk polycrystalline silicon material is loaded into a quartz crucible, there is usually a lot of space between the materials, and only half of the crucible's volume can be filled. However, in order to pull crystals with larger volumes or longer lengths, as much material as possible needs to be loaded into the quartz crucible. Therefore, in the monocrystalline silicon growth process, after the initial material is melted, a smaller volume of polycrystalline silicon material is loaded into a quartz tube device and hoisted into the furnace. This allows the lower valve of the quartz tube to be opened above the crucible, allowing the material to fall into the molten silicon to continue melting. This process is usually called the secondary feeding process. In actual operation, in order to load enough polycrystalline silicon material into the quartz crucible, one or even several secondary feeding operations are usually performed.

[0004] During secondary feeding, silicon overflow frequently occurs due to human error causing overfilling. This means the crucible contains more molten silicon than its capacity allows, causing it to overflow. Silicon overflow can lead to safety accidents, so for safety reasons, the furnace is shut down when silicon overflow occurs. However, at this point, no crystal rods have yet formed; therefore, this shutdown is premature, which degrades the quality of the polycrystalline material in the crucible. Therefore, preventing silicon overflow has become a pressing technical problem to be solved. Summary of the Invention

[0005] The purpose of this application is to provide a method and apparatus for controlling the charge amount in a single crystal furnace, including the following technical solutions:

[0006] A method for controlling the charge amount in a single crystal furnace, the method comprising:

[0007] Obtain the first weight of the polycrystalline silicon raw material in the crucible inside the single crystal furnace;

[0008] If it is detected that the material cylinder has completely entered the auxiliary chamber of the single crystal furnace, read the reading of the weighing device located at the lifting head of the single crystal furnace;

[0009] Based on the first weight, the reading, and the weight of the empty barrel, determine the total weight of the polycrystalline silicon raw material in the crucible and the polycrystalline silicon raw material in the barrel at the current moment;

[0010] If the total weight is less than or equal to the maximum weight of the crucible, add the polycrystalline silicon raw material in the barrel into the crucible, and return to the step of obtaining the first weight of the polycrystalline silicon raw material in the crucible in the single crystal furnace.

[0011] If the total weight exceeds the maximum loading weight of the crucible, an alarm message is output and adding polycrystalline silicon raw material from the barrel into the crucible is prohibited.

[0012] The above method, preferably, also includes:

[0013] After the polycrystalline silicon raw material in the barrel is added to the crucible, if the first weight of the polycrystalline silicon raw material in the crucible in the single crystal furnace is equal to the maximum loading weight of the crucible, after the rod lifting process is completed, the process returns to the step of obtaining the first weight of the polycrystalline silicon raw material in the crucible in the single crystal furnace.

[0014] In the above method, preferably, obtaining the first weight of the polycrystalline silicon raw material in the crucible within the single-crystal furnace includes:

[0015] If the polycrystalline silicon raw material in the crucible is a pre-loaded raw material, the first weight of the polycrystalline silicon raw material in the crucible is a preset weight;

[0016] After the polycrystalline silicon raw material in the barrel is added to the crucible, the first weight of the polycrystalline silicon raw material in the crucible is the sum of the first weight and the weight of the polycrystalline silicon raw material in the barrel.

[0017] After the rod extraction process is completed, the first weight of the polycrystalline silicon raw material in the crucible is the difference between the first weight and the weight of the extracted crystal rod.

[0018] The above method, preferably, also includes:

[0019] After obtaining the first weight of the polycrystalline silicon raw material in the crucible, the first weight is displayed.

[0020] Preferably, in the above method, adding the polycrystalline silicon raw material from the barrel to the crucible includes:

[0021] The auxiliary chamber is then purified;

[0022] After the secondary chamber is purified, when the isolation valve between the secondary chamber and the main chamber is opened, the updated first weight is displayed. The updated first weight is the sum of the first weight of the polycrystalline silicon raw material in the crucible and the weight of the polycrystalline silicon raw material in the barrel.

[0023] After feeding is completed and the material cylinder has fully entered the secondary chamber, the isolation valve between the secondary chamber and the main chamber is closed.

[0024] A single crystal furnace charging amount control device, the device comprising:

[0025] The module is used to obtain the first weight of the polycrystalline silicon raw material in the crucible inside the single crystal furnace;

[0026] The reading module is used to read the reading of the weighing device located at the lifting head of the single crystal furnace if it is detected that the material cylinder has completely entered the auxiliary chamber of the single crystal furnace;

[0027] The determination module is used to determine the total weight of the polysilicon raw material in the crucible and the polysilicon raw material in the barrel at the current moment based on the first weight, the reading and the weight of the empty barrel;

[0028] The control module is configured to add polycrystalline silicon raw material from the barrel to the crucible if the total weight is less than or equal to the maximum loading weight of the crucible, triggering the obtaining module to obtain the first weight of polycrystalline silicon raw material in the crucible within the single crystal furnace; if the total weight is greater than the maximum loading weight of the crucible, output an alarm message and prohibit adding polycrystalline silicon raw material from the barrel to the crucible.

[0029] Preferably, in the above-mentioned device, the control module is further used for:

[0030] After the polycrystalline silicon raw material in the barrel is added to the crucible, if the first weight is equal to the maximum loading weight of the crucible, after the rod lifting process is completed, the obtaining module is triggered to obtain the first weight of the polycrystalline silicon raw material in the crucible in the single crystal furnace.

[0031] Preferably, in the above-described apparatus, the obtaining module is used for:

[0032] If the polycrystalline silicon raw material in the crucible is a pre-loaded raw material, the first weight of the polycrystalline silicon raw material in the crucible is a preset weight;

[0033] After the polycrystalline silicon raw material in the barrel is added to the crucible, the first weight of the polycrystalline silicon raw material in the crucible is the sum of the first weight and the weight of the polycrystalline silicon raw material in the barrel.

[0034] After the rod extraction process is completed, the first weight of the polycrystalline silicon raw material in the crucible is the difference between the first weight and the weight of the extracted crystal rod.

[0035] The above-mentioned device, preferably, further includes:

[0036] The display module is used to display the first weight obtained by the obtaining module.

[0037] Preferably, in the above-described apparatus, when the control module adds the polycrystalline silicon raw material from the barrel to the crucible, it is used to:

[0038] The auxiliary chamber is then purified;

[0039] After the secondary chamber is purified, open the isolation valve between the secondary chamber and the main chamber;

[0040] After feeding is completed and the material cylinder has fully entered the secondary chamber, the isolation valve between the secondary chamber and the main chamber is closed.

[0041] The display module is also used to display an updated first weight when the isolation valve between the secondary chamber and the main chamber is opened. The updated first weight is the sum of the first weight of the polycrystalline silicon raw material in the crucible and the weight of the polycrystalline silicon raw material in the barrel.

[0042] An electronic device, comprising:

[0043] Memory, used to store programs;

[0044] A processor is configured to call and execute the program in the memory, thereby implementing the various steps of the single crystal furnace feed rate control method as described in any of the preceding claims.

[0045] A readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the single crystal furnace charge control method as described in any of the preceding claims.

[0046] As can be seen from the above scheme, the single crystal furnace feeding amount control method and device provided in this application obtains the first weight of polycrystalline silicon raw material in the crucible inside the single crystal furnace; if it is detected that the material cylinder has completely entered the secondary chamber of the single crystal furnace, the reading of the weighing device located at the lifting head of the single crystal furnace is read; based on the first weight, the reading, and the weight of the empty material cylinder, the total weight of the polycrystalline silicon raw material in the crucible and the polycrystalline silicon raw material in the material cylinder at the current moment is determined; if the total weight is less than or equal to the maximum loading weight of the crucible, the polycrystalline silicon raw material in the material cylinder is added to the crucible, and the process returns to the step of obtaining the first weight of the polycrystalline silicon raw material in the crucible inside the single crystal furnace; if the total weight is greater than the maximum loading weight of the crucible, an alarm message is output and adding polycrystalline silicon raw material in the material cylinder to the crucible is prohibited. This application installs a weighing device at the pull head of the single crystal furnace. During the feeding process, the weight of the polycrystalline silicon raw material in the crucible and the weight of the polycrystalline silicon raw material in the barrel can be obtained. This allows for determination of whether the sum of the weights of the polycrystalline silicon raw material in the barrel and the crucible exceeds the maximum loading weight of the crucible before adding the polycrystalline silicon raw material from the barrel to the crucible. Only if the sum of the weights of the polycrystalline silicon raw material in the barrel and the crucible does not exceed the maximum loading weight of the crucible will the polycrystalline silicon raw material in the barrel be added to the crucible. This avoids the polycrystalline silicon raw material in the crucible being overweight, thus preventing the silicon melt from overflowing during the polycrystalline silicon raw material melting process and ensuring production safety. Attached Figure Description

[0047] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0048] Figure 1 This is a schematic diagram of a single crystal furnace provided in an embodiment of this application;

[0049] Figure 2 A flowchart illustrating an implementation of the single crystal furnace charging amount control method provided in this application embodiment;

[0050] Figure 3 This is a flowchart illustrating an embodiment of the present application for adding polycrystalline silicon raw material from a barrel into a crucible;

[0051] Figure 4 A schematic diagram of a single crystal furnace feeding amount control device provided in an embodiment of this application;

[0052] Figure 5 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application.

[0053] The terms "first," "second," "third," "fourth," etc. (if present) in the specification, claims, and accompanying drawings are used to distinguish similar parts and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in a sequence other than that illustrated herein. Detailed Implementation

[0054] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0055] like Figure 1 The diagram shown is a structural schematic of a single crystal furnace provided in an embodiment of this application. The thinner section at the top is called the secondary chamber, and the thicker section at the bottom is the main chamber. The lifting head is located at the top of the secondary chamber, and a tungsten wire rope is connected to the lower part of the lifting head to suspend various items, including the material cylinder and the crystal rod.

[0056] In order to obtain the weight of the barrel, this application provides a weighing device at the lifting head, with the barrel and crystal rod suspended below the weighing device to obtain the weight of the barrel or crystal rod.

[0057] like Figure 2 The diagram shown is a flowchart of one implementation of the single crystal furnace charging amount control method provided in this application embodiment, which may include:

[0058] Step S201: Obtain the first weight of the polycrystalline silicon raw material in the crucible inside the single crystal furnace.

[0059] If the polysilicon material in the crucible is the first batch of material added, that is, the initial weight of the polysilicon material in the crucible is the preset weight. In other words, if it is the first time polysilicon material is added to the crucible, the amount of polysilicon material to be added is predetermined. After adding the preset weight of polysilicon material to the crucible outside the single crystal furnace, the crucible with the added polysilicon material is placed into the main chamber of the single crystal furnace. The specific placement process is a mature technology in semiconductor silicon single crystal growth processes and will not be elaborated here.

[0060] After placing the crucible into the main chamber, the single-crystal furnace is closed. Once closed, the polycrystalline silicon material inside the crucible can be heated. After the polycrystalline silicon material in the crucible has melted, the operator can add material to the single-crystal furnace for a second time. Each time a second material is added, the operator first loads the polycrystalline silicon material into a barrel (also called a quartz tube), then attaches the barrel containing the polycrystalline silicon material to the lifting head of the single-crystal furnace so that the barrel can be lifted and placed into the auxiliary chamber. The auxiliary chamber is equipped with a sensor that can detect (or monitor) whether the barrel has completely entered the auxiliary chamber. Polycrystalline silicon material can only be added to the crucible in the main chamber after the barrel has completely entered the auxiliary chamber.

[0061] The process of placing the barrel into the sub-chamber and monitoring whether the barrel has completely entered the sub-chamber is a mature technology in semiconductor silicon single crystal growth process, and will not be elaborated here.

[0062] Step S202: If it is detected that the material cylinder has completely entered the secondary chamber of the single crystal furnace, read the reading of the weighing device located at the lifting head of the single crystal furnace.

[0063] After the barrel has fully entered the auxiliary chamber of the single crystal furnace, unlike the prior art where the polycrystalline silicon raw material in the barrel is directly added to the crucible, this application first reads the reading of the weighing device.

[0064] Step S203: Based on the first weight, the reading of the weighing device, and the weight of the empty barrel, determine the total weight of the polysilicon raw material in the crucible and the polysilicon raw material in the barrel at the current moment.

[0065] The weight of the empty barrel is known. Therefore, the total weight of the polysilicon raw material in the crucible and the polysilicon raw material in the barrel at the current moment is: the sum of the first weight and the reading of the weighing device minus the weight of the empty barrel.

[0066] Step S204: Determine if the total weight is less than or equal to the maximum weight of the crucible. If the total weight is less than or equal to the maximum weight of the crucible, proceed to step S205; if the total weight is greater than the maximum weight of the crucible, proceed to step S206.

[0067] Step S205: Add the polycrystalline silicon raw material in the barrel to the crucible mentioned above, and return to step S201 and subsequent steps.

[0068] If the total weight calculated in step S203 is less than or equal to the maximum loading weight of the crucible, it indicates that the molten silicon will not overflow the crucible after the polycrystalline silicon raw material in the barrel is added to the crucible. Therefore, the polycrystalline silicon raw material in the barrel can be added to the crucible. The process of adding the polycrystalline silicon raw material in the barrel to the crucible can refer to existing semiconductor silicon single crystal growth processes. The specific implementation process is described in subsequent embodiments.

[0069] After the polysilicon raw material in the barrel is added to the crucible, the first weight of the polysilicon raw material in the crucible is updated to the total weight calculated in step S203, which is the sum of the first weight of the polysilicon raw material in the barrel before it was added to the crucible and the weight of the polysilicon raw material in the barrel.

[0070] Step S206: Output alarm information and prohibit adding polysilicon raw material from the barrel into the crucible.

[0071] If the total weight calculated in step S203 is greater than the maximum weight of the crucible, it means that the silicon liquid will overflow the crucible after the polysilicon raw material in the barrel is added to the crucible. Therefore, it is forbidden to add the polysilicon raw material in the barrel to the crucible. At this time, an alarm message can be output so that the staff can replace the barrel with a new one. The amount of polysilicon raw material in the new barrel should be less than the amount of polysilicon raw material in the barrel.

[0072] Furthermore, while outputting alarm information, the material cylinder can also be lifted out of the auxiliary chamber so that staff can replace it with a new one.

[0073] Furthermore, after the alarm information is output, staff can perform preset operations to remove the material cylinder from the auxiliary chamber and replace it with a new one.

[0074] The single-crystal furnace feeding control method provided in this application embodiment is to install a weighing device at the pull head of the single-crystal furnace. During the feeding process, the weight of the polycrystalline silicon raw material in the crucible and the weight of the polycrystalline silicon raw material in the barrel can be obtained. In this way, it can be determined whether the sum of the weight of the polycrystalline silicon raw material in the barrel and the weight of the polycrystalline silicon raw material in the crucible exceeds the maximum loading weight of the crucible before adding the polycrystalline silicon raw material in the barrel to the crucible. Only if the sum of the weight of the polycrystalline silicon raw material in the barrel and the weight of the polycrystalline silicon raw material in the crucible does not exceed the maximum loading weight of the crucible will the polycrystalline silicon raw material in the barrel be added to the crucible. This avoids the polycrystalline silicon raw material in the crucible from being overweight, and thus avoids the overflow of silicon liquid during the melting process of polycrystalline silicon raw material, ensuring production safety.

[0075] In an optional embodiment, after the polycrystalline silicon raw material in the barrel is added to the crucible, if the first weight of the polycrystalline silicon raw material in the crucible within the single crystal furnace is equal to the maximum loading weight of the crucible, it indicates that a series of processes (e.g., temperature stabilization, crystal pulling, shoulder formation, equal diameter forming, finishing, cooling, etc.) will be initiated after the polycrystalline silicon raw material melts, until the single crystal silicon rod is pulled and the final rod lifting process. Only after the rod lifting process is completed can a second feeding be performed into the crucible.

[0076] After the ingot pulling process is completed, this application will return to the step of obtaining the first weight of the polycrystalline silicon raw material in the crucible inside the single crystal furnace. At this time, the first weight is updated to the difference between the first weight of the polycrystalline silicon raw material in the crucible before pulling the single crystal silicon ingot and the weight of the extracted ingot.

[0077] In summary, in the embodiments of this application, one way to obtain the first weight of the polycrystalline silicon raw material in the crucible within the single-crystal furnace can be:

[0078] If the polysilicon material in the crucible is the initial loading material, the first weight of the polysilicon material in the crucible is the preset weight.

[0079] After the polycrystalline silicon raw material in the barrel is added to the crucible, the first weight of the polycrystalline silicon raw material in the crucible is the sum of the first weight of the polycrystalline silicon raw material in the crucible and the weight of the polycrystalline silicon raw material in the barrel.

[0080] After the rod extraction process is completed, the first weight of the polycrystalline silicon raw material in the crucible is the difference between the first weight of the polycrystalline silicon raw material in the crucible and the weight of the extracted crystal rod.

[0081] In an optional embodiment, in order for the staff to accurately know the weight of the polycrystalline silicon material in the crucible, after obtaining the first weight of the polycrystalline silicon material in the crucible, the first weight can also be displayed for the staff to view.

[0082] In an optional embodiment, a flowchart illustrating one method of adding polycrystalline silicon raw material from the barrel to the crucible is shown below. Figure 3 As shown, it may include:

[0083] Step S301: Purify the auxiliary chamber.

[0084] Sub-chamber purification refers to the process of pressurizing the sub-chamber after the barrel is hoisted into it. When the purification is complete, the pressure in the sub-chamber is essentially equal to the pressure in the main chamber. For details on the specific implementation process, please refer to existing semiconductor silicon single crystal growth processes; these will not be elaborated upon here.

[0085] Step S302: After the secondary chamber is purified, when the isolation valve between the secondary chamber and the main chamber is opened, the updated first weight is displayed. The updated first weight is the sum of the first weight of the polycrystalline silicon raw material in the crucible and the weight of the polycrystalline silicon raw material in the barrel.

[0086] The isolation valve is located at the connection between the secondary chamber and the main chamber. When the secondary chamber is open, the isolation valve must be closed to keep the pressure in the main chamber constant. After the secondary chamber is purified, the isolation valve is opened again, so that the main chamber and the secondary chamber are connected. Only when the main chamber and the secondary chamber are connected can the polycrystalline silicon raw material in the barrel be added to the crucible.

[0087] Unlike existing semiconductor silicon single crystal growth processes, this application displays the updated first weight when the isolation valve between the secondary chamber and the main chamber is opened, so that the operator can obtain the latest weight in the crucible after each secondary feeding.

[0088] Step S303: Perform the feeding operation. After the feeding is completed and the material cylinder has fully entered the auxiliary chamber, close the isolation valve between the auxiliary chamber and the main chamber.

[0089] After the auxiliary chamber is connected to the main chamber, the barrel needs to be moved downwards to enter the main chamber and get closer to the crucible. When the distance between the lower end of the barrel and the crucible is reduced to a certain value, the lower end of the barrel is opened. This allows the polycrystalline silicon material in the barrel to enter the crucible without causing silicon liquid to splash. This prevents the lower end of the barrel from being too far from the crucible, which would cause silicon liquid to splash out when the polycrystalline silicon material in the barrel falls into the crucible.

[0090] After feeding is complete, lift the cylinder upwards so that it moves out of the main chamber. After the cylinder has completely entered the secondary chamber, close the isolation valve between the secondary chamber and the main chamber.

[0091] The specific implementation process of step S303 is the same as the existing semiconductor silicon single crystal growth process, and will not be described in detail here.

[0092] Corresponding to the method embodiments, this application also provides a single crystal furnace charging amount control device. A schematic diagram of a single crystal furnace charging amount control device provided in this application is shown below. Figure 4 As shown, it may include:

[0093] Module 401 is obtained, module 402 is read, module 403 is determined, and module 404 is controlled; among them,

[0094] The module 401 is used to obtain the first weight of the polycrystalline silicon raw material in the crucible inside the single crystal furnace.

[0095] The reading module 402 is used to read the reading of the weighing device located at the lifting head of the single crystal furnace if it is detected that the material cylinder has completely entered the auxiliary chamber of the single crystal furnace.

[0096] The determining module 403 is used to determine the total weight of the polysilicon raw material in the crucible and the polysilicon raw material in the barrel at the current moment based on the first weight, the reading and the weight of the empty barrel.

[0097] The control module 404 is used to add the polycrystalline silicon raw material in the barrel to the crucible if the total weight is less than or equal to the maximum loading weight of the crucible, triggering the obtaining module 401 to obtain the first weight of the polycrystalline silicon raw material in the crucible in the single crystal furnace; if the total weight is greater than the maximum loading weight of the crucible, an alarm message is output and the addition of the polycrystalline silicon raw material in the barrel to the crucible is prohibited.

[0098] In an optional embodiment, the control module 404 is further configured to:

[0099] After the polycrystalline silicon raw material in the barrel is added to the crucible, if the first weight is equal to the maximum loading weight of the crucible, after the rod lifting process is completed, the obtaining module is triggered to obtain the first weight of the polycrystalline silicon raw material in the crucible in the single crystal furnace.

[0100] In an optional embodiment, the obtaining module 401 is used to:

[0101] If the polycrystalline silicon raw material in the crucible is a pre-loaded raw material, the first weight of the polycrystalline silicon raw material in the crucible is a preset weight;

[0102] After the polycrystalline silicon raw material in the barrel is added to the crucible, the first weight of the polycrystalline silicon raw material in the crucible is the sum of the first weight and the weight of the polycrystalline silicon raw material in the barrel.

[0103] After the rod extraction process is completed, the first weight of the polycrystalline silicon raw material in the crucible is the difference between the first weight and the weight of the extracted crystal rod.

[0104] In an optional embodiment, the single crystal furnace feed rate control device further includes:

[0105] The display module is used to display the first weight obtained by the obtaining module.

[0106] In an optional embodiment, when the control module 404 adds the polycrystalline silicon raw material from the barrel into the crucible, it is used to:

[0107] The auxiliary chamber is then purified;

[0108] After the secondary chamber is purified, open the isolation valve between the secondary chamber and the main chamber;

[0109] After feeding is completed and the material cylinder has fully entered the secondary chamber, the isolation valve between the secondary chamber and the main chamber is closed.

[0110] The display module is also used to display an updated first weight when the isolation valve between the secondary chamber and the main chamber is opened. The updated first weight is the sum of the first weight of the polycrystalline silicon raw material in the crucible and the weight of the polycrystalline silicon raw material in the barrel.

[0111] Corresponding to the method embodiments, this application also provides an electronic device, a schematic diagram of which is shown below. Figure 5 As shown, it may include: at least one processor 1, at least one communication interface 2, at least one memory 3, and at least one communication bus 4.

[0112] In this embodiment, the number of processor 1, communication interface 2, memory 3, and communication bus 4 is at least one, and processor 1, communication interface 2, and memory 3 communicate with each other through communication bus 4.

[0113] Processor 1 may be a central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of this application.

[0114] Memory 3 may include high-speed RAM, and may also include non-volatile memory, such as at least one disk storage device.

[0115] The memory 3 stores a program, and the processor 1 can call the program stored in the memory 3. The program is used for:

[0116] Obtain the first weight of the polycrystalline silicon raw material in the crucible inside the single crystal furnace;

[0117] If it is detected that the material cylinder has completely entered the auxiliary chamber of the single crystal furnace, read the reading of the weighing device located at the lifting head of the single crystal furnace;

[0118] Based on the first weight, the reading, and the weight of the empty barrel, determine the total weight of the polycrystalline silicon raw material in the crucible and the polycrystalline silicon raw material in the barrel at the current moment;

[0119] If the total weight is less than or equal to the maximum weight of the crucible, add the polycrystalline silicon raw material in the barrel into the crucible, and return to the step of obtaining the first weight of the polycrystalline silicon raw material in the crucible in the single crystal furnace.

[0120] If the total weight exceeds the maximum loading weight of the crucible, an alarm message is output and adding polycrystalline silicon raw material from the barrel into the crucible is prohibited.

[0121] Optionally, the refined and extended functions of the program can be found in the description above.

[0122] This application embodiment also provides a storage medium that can store a program suitable for execution by a processor, the program being used for:

[0123] Obtain the first weight of the polycrystalline silicon raw material in the crucible inside the single crystal furnace;

[0124] If it is detected that the material cylinder has completely entered the auxiliary chamber of the single crystal furnace, read the reading of the weighing device located at the lifting head of the single crystal furnace;

[0125] Based on the first weight, the reading, and the weight of the empty barrel, determine the total weight of the polycrystalline silicon raw material in the crucible and the polycrystalline silicon raw material in the barrel at the current moment;

[0126] If the total weight is less than or equal to the maximum weight of the crucible, add the polycrystalline silicon raw material in the barrel into the crucible, and return to the step of obtaining the first weight of the polycrystalline silicon raw material in the crucible in the single crystal furnace.

[0127] If the total weight exceeds the maximum loading weight of the crucible, an alarm message is output and adding polycrystalline silicon raw material from the barrel into the crucible is prohibited.

[0128] Optionally, the refined and extended functions of the program can be found in the description above.

[0129] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0130] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. Furthermore, the couplings or direct couplings or communication connections shown or discussed may be indirect couplings or communication connections through interfaces, devices, or units, and may be electrical, mechanical, or other forms.

[0131] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0132] In addition, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0133] It should be understood that in the embodiments of this application, the claims, various embodiments, and features can be combined with each other to solve the aforementioned technical problems.

[0134] If the aforementioned functions are implemented as software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0135] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for controlling the charge amount in a single crystal furnace, characterized in that, The method includes: Obtain the first weight of the polycrystalline silicon raw material in the crucible inside the single crystal furnace; The polycrystalline silicon raw material is loaded into the barrel, and the barrel containing the polycrystalline silicon raw material is installed onto the lifting head of the single crystal furnace. If the sensor installed in the auxiliary chamber detects that a material cylinder has completely entered the auxiliary chamber of the single crystal furnace, the reading of the weighing device located at the lifting head of the single crystal furnace is read. Add the first weight to the reading, and then subtract the weight of the empty barrel to obtain the total weight of the polycrystalline silicon raw material in the crucible and the polycrystalline silicon raw material in the barrel at the current moment. If the total weight is less than or equal to the maximum weight of the crucible, the secondary chamber is cleaned. When the isolation valve between the secondary chamber and the main chamber is opened, the updated first weight is displayed. The updated first weight is the sum of the first weight of the polysilicon raw material in the crucible and the weight of the polysilicon raw material in the barrel. After opening the isolation valve between the secondary chamber and the main chamber, the barrel is moved downward to enter the main chamber and approach the crucible. When the distance between the lower end of the barrel and the crucible is detected to have decreased to a certain value, the lower end of the barrel is opened again to allow the polysilicon raw material in the barrel to be added to the crucible. The process then returns to the step of obtaining the first weight of the polysilicon raw material in the crucible within the single crystal furnace. If the total weight exceeds the maximum loading weight of the crucible, an alarm message is output and the addition of polysilicon raw material from the barrel to the crucible is prohibited. The barrel is then removed from the secondary chamber.

2. The method according to claim 1, characterized in that, Also includes: After the polycrystalline silicon raw material in the barrel is added to the crucible, if the first weight of the polycrystalline silicon raw material in the crucible in the single crystal furnace is equal to the maximum loading weight of the crucible, after the rod lifting process is completed, the process returns to the step of obtaining the first weight of the polycrystalline silicon raw material in the crucible in the single crystal furnace.

3. The method according to claim 1 or 2, characterized in that, The first weight of the polycrystalline silicon raw material obtained in the crucible within the single crystal furnace includes: If the polycrystalline silicon raw material in the crucible is a pre-loaded raw material, the first weight of the polycrystalline silicon raw material in the crucible is a preset weight; After the polycrystalline silicon raw material in the barrel is added to the crucible, the first weight of the polycrystalline silicon raw material in the crucible is the sum of the first weight and the weight of the polycrystalline silicon raw material in the barrel; After the rod extraction process is completed, the first weight of the polycrystalline silicon raw material in the crucible is the difference between the first weight and the weight of the extracted crystal rod.

4. The method according to claim 1, characterized in that, Also includes: After obtaining the first weight of the polycrystalline silicon raw material in the crucible, the first weight is displayed.

5. The method according to claim 4, characterized in that, Also includes: After feeding is complete and the material cylinder has fully entered the secondary chamber, close the isolation valve between the secondary chamber and the main chamber.

6. A single crystal furnace charging quantity control device, characterized in that, The device includes: The module is used to obtain the first weight of the polycrystalline silicon raw material in the crucible inside the single crystal furnace; The reading module is used to read the reading of the weighing device located at the lifting head of the single crystal furnace if the sensor installed in the sub-chamber detects that the material cylinder has completely entered the sub-chamber of the single crystal furnace; The determination module is used to add the first weight to the reading and then subtract the weight of the empty barrel to obtain the total weight of the polycrystalline silicon raw material in the crucible and the polycrystalline silicon raw material in the barrel at the current moment. The control module is configured to: purify the secondary chamber if the total weight is less than or equal to the maximum loading weight of the crucible; and after opening the isolation valve between the secondary chamber and the main chamber, move the material cylinder downwards to enter the main chamber and approach the crucible; when the distance between the lower end of the material cylinder and the crucible is detected to have decreased to a certain value, open the lower end of the material cylinder to allow the polycrystalline silicon material in the material cylinder to be added to the crucible, triggering the obtaining module to obtain the first weight of the polycrystalline silicon material in the crucible within the single crystal furnace; if the total weight is greater than the maximum loading weight of the crucible, output an alarm message and prohibit the addition of polycrystalline silicon material from the material cylinder to the crucible, and remove the material cylinder from the secondary chamber. The display module is used to display the updated first weight when the isolation valve between the secondary chamber and the main chamber is opened. The updated first weight is the sum of the first weight of the polycrystalline silicon raw material in the crucible and the weight of the polycrystalline silicon raw material in the barrel. The device is also used to: load polysilicon raw materials into a barrel and install the barrel containing polysilicon raw materials onto the lifting head of the single crystal furnace.

7. The apparatus according to claim 6, characterized in that, The control module is also used for: After the polycrystalline silicon raw material in the barrel is added to the crucible, if the first weight is equal to the maximum loading weight of the crucible, after the rod lifting process is completed, the obtaining module is triggered to obtain the first weight of the polycrystalline silicon raw material in the crucible in the single crystal furnace.

8. The apparatus according to claim 6 or 7, characterized in that, The obtaining module is used for: If the polycrystalline silicon raw material in the crucible is a pre-loaded raw material, the first weight of the polycrystalline silicon raw material in the crucible is a preset weight; After the polycrystalline silicon raw material in the barrel is added to the crucible, the first weight of the polycrystalline silicon raw material in the crucible is the sum of the first weight and the weight of the polycrystalline silicon raw material in the barrel. After the rod extraction process is completed, the first weight of the polycrystalline silicon raw material in the crucible is the difference between the first weight and the weight of the extracted crystal rod.

9. The apparatus according to claim 6, characterized in that, Also includes: The display module is also used to display the first weight obtained by the obtaining module.

10. The apparatus according to claim 9, characterized in that, The control module is also used for: After feeding is complete and the material cylinder has fully entered the secondary chamber, close the isolation valve between the secondary chamber and the main chamber.

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