Flexible brain-computer interface composite device and preparation method thereof

CN116898448BActive Publication Date: 2026-06-26SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Patent Information

Application Number
CN202310860026.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-07-13
Publication Date
2026-06-26
Estimated Expiration
2043-07-13

AI Technical Summary

Technical Problem

Existing invasive brain-computer interface devices are large in size and difficult to integrate, and the combination of multiple functions increases the risk of implantation trauma and device instability.

Method used

The flexible brain-computer interface composite device includes a flexible substrate, a bottom electrode layer, a functional thin film layer and a top electrode layer stacked together. The functional thin film layer is composed of first and second epitaxial layers made of n-type and p-type doped semiconductors, and the light-emitting layer is indium gallium nitride, which realizes the functions of collecting brain signals, optogenetic stimulation and power supply.

Benefits of technology

The size of the brain-computer interface has been reduced, the integration has been improved, and multiple functions have been integrated, reducing the risk of implantation trauma and improving device stability.

✦ Generated by Eureka AI based on patent content.

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Abstract

The application discloses a flexible brain-computer interface composite device and a preparation method thereof. The flexible brain-computer interface composite device comprises a flexible substrate, a bottom electrode layer, a functional film layer and a top electrode layer which are arranged in a stack; the functional film layer comprises a first epitaxial layer, a light-emitting layer and a second epitaxial layer which are arranged in a stack from the bottom electrode layer to the top electrode layer; one of the first epitaxial layer and the second epitaxial layer is an n-type doped semiconductor material, and the other is a p-type doped semiconductor material; and the material of the light-emitting layer is indium gallium nitride. The application can combine the functions of collecting brain electrical signals, emitting light stimulation signals and providing energy for the device into the same device structure, so that the volume of the brain-computer interface device can be reduced and the integration degree can be improved.
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Citation Information

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