A high efficiency 2.45ghz microwave rectifier circuit with large input power

Abstract

The application discloses a novel high-efficiency 2.45GHz microwave rectifier circuit with high input power, which uses 0.8mm-thick FR4 medium as a plate material, inputs energy into the rectifier circuit through an SMA-KHD input socket, and realizes impedance matching of an input microstrip line and a capacitor pad through a ladder-type microstrip line, so that microwave energy enters an impedance matching and harmonic suppression microstrip line through a direct-current isolation capacitor, and then 2.45GHz microwave rectification is realized through an HSMS-270B rectifier diode, and a DC waveform after rectification supplies power to a load through a filtering inductor. Through the above design, the rectifier circuit has the capability of realizing high input power rectification, and realizes rectification at a maximum of 35dBm input; the novel rectifier circuit has a wide input power range, and can realize rectification in a range of 0dBm-35dBm; the novel rectifier circuit has high rectification efficiency under high power input, and realizes rectification efficiency of more than 50% in a range of 29dBm-33dBm, and the maximum rectification efficiency is 54.2%.

Description

Technical Field

[0001] This invention belongs to the field of radio frequency circuit design technology, specifically, it relates to a high-efficiency 2.45GHz microwave rectifier circuit with high input power. Background Technology

[0002] With the development of the Internet of Things (IoT) and wireless power transmission technologies, microwave wireless power transmission technology has seen rapid development in recent years due to its longer transmission distance and greater practicality compared to other wireless power transmission technologies. Improving the efficiency and reducing the weight of microwave wireless power transmission systems has always been a key focus of research and development. The design of high-frequency microwave rectifier circuits is extremely important in terms of efficiency, especially for rectifier circuits with input power exceeding 1W. In microwave wireless power transmission systems, to meet a power requirement of at least 500mW, a high-gain receiving antenna is needed connected to multiple rectifier circuits via a power divider, or multiple one-to-one receiving modules are used to meet the load power. This approach increases both system manufacturing costs and weight. Furthermore, when system circuit problems occur, the complex cascading of multiple rectifier circuits makes it difficult to pinpoint the problem, thus increasing maintenance costs. Summary of the Invention

[0003] The purpose of this invention is to provide a high-efficiency 2.45GHz microwave rectifier circuit with high input power, which mainly solves the problem of high maintenance costs caused by the complex cascading of existing microwave rectifier circuits.

[0004] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0005] A high-efficiency 2.45GHz microwave rectifier circuit with high input power includes a dielectric substrate, a ground copper layer covering the back of the dielectric substrate, a solder mask layer covering the ground copper layer, two ground pads formed by opening windows on the surface of the solder mask layer, an SMA-KHD input socket soldered to the dielectric substrate via the ground pads, an input microstrip line soldered to the power input feed pin of the SMA-KHD input socket, an impedance-converting trapezoidal microstrip line with its wide end connected to the input microstrip line, a first packaging pad for encapsulating a DC blocking capacitor connected to the narrow end of the impedance-converting trapezoidal microstrip line, a first transition microstrip line with its left end soldered to the DC blocking capacitor, a filter inductor connection microstrip line connected to the upper end of the first transition microstrip line, and an impedance matching circuit connected to the right end of the first transition microstrip line. The microstrip line includes a second transition microstrip line connected to the right end of the impedance matching microstrip line, a first harmonic suppression microstrip line whose upper end is connected to the lower end of the second transition microstrip line and whose lower end is open, a rectifier diode whose cathode is connected to the right end of the second transition microstrip line, a second harmonic suppression microstrip line whose left end is connected to the anode of the rectifier diode and whose right end is shorted to the ground copper layer through a via, a second packaging pad for packaging the filter inductor connected to the upper end of the microstrip line, an output positive load connection microstrip line connected to the filter inductor at the lower end, and an output negative load connection microstrip line connected to the ground copper layer through multiple load grounding vias. The entire output positive load connection microstrip line serves as the load positive pad, and the entire output negative load connection microstrip line serves as the load negative pad.

[0006] Furthermore, in this invention, the dielectric substrate has a rectangular structure, is made of FR4 material, has a dielectric constant of 4.4, a thickness of 0.8 mm, a length L = 25 mm, and a width W = 18 mm;

[0007] The input microstrip line has a width of W1 = 1.5 mm and a length of L1 = 5 mm;

[0008] The impedance-converting trapezoidal microstrip line has a width of W1 = 1.5 mm, a width of W2 = 0.65 mm, and a length of L2 = 2.1 mm.

[0009] The first adapter microstrip line has a width of W4 = 1.5 mm and a length of W3 = 1.48 mm;

[0010] The impedance matching microstrip line has a width of W4 = 1.5 mm and a length of L4 = 5.05 mm.

[0011] The first harmonic suppression microstrip line has a width of W5 = 1.48 mm and a length of L5 = 7 mm;

[0012] The second transition microstrip line has a width of W4 = 1.4 mm and a length of W5 = 1.48 mm;

[0013] The second harmonic suppression microstrip line has a width of W6 = 4.45 mm and a length of L6 = 4.9 mm;

[0014] The filter inductor is connected to a microstrip line with a width of W3 = 1.48 mm and a length of L3 = 2.54 mm.

[0015] The output positive load is connected to a microstrip line with a width of W7 = 5 mm and a length of L7 = 2.48 mm.

[0016] The output positive load is connected to a microstrip line with a width of W7 = 5 mm and a length of L8 = 0.98 mm.

[0017] The via connecting the second harmonic suppression microstrip line to the ground copper layer has a diameter of R1 = 0.6 mm;

[0018] The output negative load is connected to the microstrip line and the load grounding via of the copper layer, with a diameter of R2 = 0.3 mm.

[0019] Furthermore, in this invention, the thickness of the ground copper layer is 0.035 mm.

[0020] Furthermore, in this invention, both the first and second package pads are 0402 package pads.

[0021] Furthermore, in this invention, the number of load grounding vias connecting the output negative load to the microstrip line and the ground copper layer is four.

[0022] Compared with the prior art, the present invention has the following beneficial effects:

[0023] The rectifier circuit of this invention has the ability to rectify high input power, achieving rectification at a maximum input of 35dBm; the novel rectifier circuit has a wide input power range, achieving rectification within the range of 0dBm to 35dBm; the novel rectifier circuit has high rectification efficiency under high power input, achieving a rectification efficiency of over 50% within the range of 29dBm to 33dBm, with a maximum rectification efficiency of 54.2%. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the overall structure of the present invention;

[0025] Figure 2 This is a front view of the rectifier circuit of the present invention;

[0026] Figure 3 This is a schematic diagram of the back of the rectifier circuit of the present invention;

[0027] Figure 4 This is a schematic diagram of the circuit principle in an embodiment of the present invention;

[0028] Figure 5 This is a harmonic analysis diagram of the present invention;

[0029] Figure 6 This is a waveform diagram of the measured efficiency of the present invention;

[0030] Figure 7 This is a flowchart illustrating the design of the rectifier circuit in this invention.

[0031] The names corresponding to the reference numerals in the attached figures are as follows:

[0032] 1-SMA-KHD input socket, 2-Input microstrip line, 3-First package pad, 4-Second package pad, 5-Rectifier diode, 6-Dielectric substrate, 7-Via, 8-Impedance conversion trapezoidal microstrip line, 9-First adapter microstrip line, 10-Impedance matching microstrip line, 11-Second adapter microstrip line, 12-First harmonic suppression microstrip line, 13-Second harmonic suppression microstrip line, 14-Filter inductor connection microstrip line, 15-Output positive load connection microstrip line, 16-Output negative load connection microstrip line, 17-Load grounding via, 18-Ground copper layer, 19-Ground pad. Detailed Implementation

[0033] The present invention will be further described below with reference to the accompanying drawings and embodiments. The embodiments of the present invention include, but are not limited to, the following embodiments.

[0034] Example

[0035] like Figures 1-3As shown, this invention discloses a high-efficiency 2.45GHz microwave rectifier circuit with high input power, comprising a dielectric substrate 6, a ground copper layer 18 covering the back of the dielectric substrate 6, a green solder mask layer covering the ground copper layer 18, two ground pads 19 formed by opening windows on the surface of the green solder mask layer, an SMA-KHD input socket 1 soldered to the dielectric substrate via the ground pads 19 using soldering, an input microstrip line 2 soldered to the power input feed pin of the SMA-KHD input socket 1, an impedance conversion trapezoidal microstrip line 8 connected to the input microstrip line 2 at its wide end, a first packaging pad 3 for encapsulating a DC blocking capacitor connected to the narrow end of the impedance conversion trapezoidal microstrip line 8, a first transition microstrip line 9 soldered to the DC blocking capacitor at its left end, a filter inductor connecting microstrip line 14 connected to the upper end of the first transition microstrip line 9, and a resistor connecting microstrip line 14 connected to the right end of the first transition microstrip line 9. The system includes an impedance matching microstrip line 10, a second transition microstrip line 11 connected to the right end of the impedance matching microstrip line 10, a first harmonic suppression microstrip line 12 whose upper end is connected to the lower end of the second transition microstrip line 11 and whose lower end is open, a rectifier diode 5 whose cathode is connected to the right end of the second transition microstrip line 11, a second harmonic suppression microstrip line 13 whose left end is connected to the anode of the rectifier diode 5 and whose right end is shorted to the ground copper layer through a via 7, a filter inductor connecting microstrip line 14 whose upper end is connected to the second packaging pad 4 for packaging the filter inductor, whose lower end is connected to the filter inductor, an output positive load connecting microstrip line 15, and an output negative load connecting microstrip line 16 connected to the ground copper layer through multiple load grounding vias 17; wherein, the entire output positive load connecting microstrip line serves as the load positive pad, and the entire output negative load connecting microstrip line serves as the load negative pad.

[0036] In this embodiment, the rectifier circuit employs a top-layer microstrip line design with a thickness of 0.035 mm, a 56 nH 0402 packaged filter inductor, a 24 pF 0402 packaged DC blocking capacitor, an HSMS-270B rectifier diode, a 0.8 mm thick FR4 dielectric layer, 0.6 mm diameter vias, and a bottom-layer 0.035 mm thick copper ground plane. The microstrip line has strict size limitations to meet impedance matching requirements. The use of the 24 pF DC blocking capacitor and the 56 nH filter inductor are lumped component parameters obtained through software optimization. The use of the 0402 package is to reduce the impact of parasitic parameters introduced by the components themselves on the rectifier circuit system.

[0037] The entire bottom layer of the rectifier circuit is copper-plated as a complete ground plane; the ground plane is covered with solder mask, and two 3mm*6mm pads are made by opening windows on the solder mask surface. The SMA-KHD input socket is soldered and fixed to the rectifier circuit board using solder. The parameters in the figure are: W9=3mm, L9=6mm.

[0038] The input microstrip line is designed to withstand a 50Ω impedance strictly according to the dielectric substrate material, and is used to solder the power input feed pin of the SMA-KHD input socket. The rectifier diode is model HSMS-270B, which has extremely low equivalent series resistance, reducing tube losses. The dielectric substrate 6 has a rectangular structure, is made of FR4 material with a dielectric constant of 4.4, a thickness of 0.8mm, a length L = 25mm, and a width W = 18mm. The input microstrip line 2 has a width of W1 = 1.5 mm and a length of L1 = 5 mm; the impedance conversion trapezoidal microstrip line 8 has a width of W1 = 1.5 mm, a length of W2 = 0.65 mm, and a length of L2 = 2.1 mm; the first transition microstrip line 9 has a width of W4 = 1.5 mm and a length of W3 = 1.48 mm; the impedance matching microstrip line 10 has a width of W4 = 1.5 mm and a length of L4 = 5.05 mm; the first harmonic suppression microstrip line 12 has a width of W5 = 1.48 mm and a length of L5 = 7 mm; the second transition microstrip line 11 has a width of W4 = 1.4 mm and a length of W5 = 1.48 mm; the second harmonic suppression microstrip line 12 has a width of W5 = 1.48 mm and a length of L5 = 7 mm; the second harmonic suppression microstrip line 11 has a width of W4 = 1.4 mm and a length of W5 = 1.48 mm; the second harmonic suppression microstrip line 12 has a width of W5 = 1.48 mm and a length of L5 = 7 mm; the second harmonic suppression microstrip line 12 ... L5 = 1.48 mm; the second harmonic suppression microstrip line 12 has a width of W1 = 1.5 mm and a length of L5 = 7 mm; the second harmonic suppression microstrip line 12 has a width of W1 = 1.5 mm and a length of The width of the wave suppression microstrip line 13 is W6 = 4.45 mm, and the length is L6 = 4.9 mm; the width of the filter inductor connecting microstrip line 14 is W3 = 1.48 mm, and the length is L3 = 2.54 mm; the width of the output positive load connecting microstrip line 15 is W7 = 5 mm, and the length is L7 = 2.48 mm; the width of the output positive load connecting microstrip line 16 is W7 = 5 mm, and the length is L8 = 0.98 mm; the diameter of the via 7 connecting the second harmonic suppression microstrip line to the ground copper layer is R1 = 0.6 mm; and the diameter of the load grounding via 17 connecting the output negative load connecting microstrip line to the ground copper layer is R2 = 0.3 mm. This rectifier circuit, designed to these dimensions, achieves excellent impedance matching with its distributed parameters and lumped elements, resulting in a rectification efficiency exceeding 50% at watt-level input power.

[0039] Compared to traditional Class-F circuit designs, this embodiment uses a trapezoidal microstrip line structure to connect the input impedance microstrip line and the DC blocking capacitor pad. The degree of matching between the input impedance and the subsequent components determines the efficiency under high power input. This design minimizes the input return loss in the invention and helps to improve the efficiency of the rectifier circuit in this invention.

[0040] In this embodiment, the design of the harmonic suppression microstrip line is crucial. Compared to the traditional Class-F circuit design that uses a fan-shaped microstrip line harmonic suppressor or multiple microstrip lines symmetrically distributed to suppress harmonics, this design uses a harmonic suppressor composed of two microstrip line branch structures before and after the diode to suppress the second and third harmonics generated by the diode.

[0041] The first harmonic suppression microstrip line is an open-circuit microstrip line. Its characteristic impedance, obtained through ADS simulation optimization, is Z1 = 50.4Ω. Its characteristics are: open-circuit for DC signals (infinite impedance to DC), blocking DC signals; and short-circuit for the second harmonic, allowing it to directly reach ground without sacrificing the DC signal. The second harmonic suppression microstrip line exhibits an open-circuit impedance characteristic for the third harmonic, suppressing it. Furthermore, it exhibits inductive reactance. Since the diode's input impedance is capacitive, the two characteristics cancel each other out, making the diode's input impedance as close to a pure resistance as possible, reducing the design difficulty of the front-end matching circuit and significantly saving design time. Therefore, its characteristic impedance is mainly determined by the diode's input impedance. ADS simulation yields a characteristic impedance of Z2 = 23.78Ω for harmonic suppression microstrip line II. Based on experiments and simulations, the following impedance formula is obtained:

[0042]

[0043]

[0044] In the formula: Z I Z1 represents the input impedance characteristics of the first harmonic suppression microstrip line at different frequencies, where f0 = 2.45 GHz is the fundamental frequency, and Z1 is the impedance characteristic value of the first harmonic suppression microstrip line at the fundamental frequency. II Z1 represents the input impedance characteristics of the second harmonic suppression microstrip line at different frequencies, and Z2 represents the impedance characteristic value of the second harmonic suppression microstrip line at the fundamental frequency.

[0045] Two formulas analyze the input impedance characteristics of the two harmonic suppression microstrip lines at different frequencies. The input impedance characteristics clearly show the suppression effect of the two on the second and third harmonics.

[0046] In this invention, the characteristic impedance values ​​of Z1 and Z2 are as follows:

[0047] The value of Z1 is first calculated based on the microstrip line theory to determine the microstrip line width at 50Ω. Then, the actual width and length of the first harmonic suppression microstrip line are obtained through simulation optimization using ADS with a 20pF DC blocking capacitor, a 56nH filter inductor, and an HSMS-270B diode. The length of the microstrip line determines the electrical angle parameters of the design.

[0048] The value of Z2 is closely related to the input impedance of the diode. Its main purpose is to offset the capacitive input impedance of the rectifier diode. The input impedance of the rectifier diode is given by the following formula:

[0049] Z D =R D -jX D

[0050] In the formula: Z D R is the input impedance of the rectifier diode. D X is the real part of the input impedance of the rectifier diode. D This represents the imaginary part of the input impedance of the rectifier diode.

[0051] When the value of Z2 satisfies the following equation:

[0052] Z2 = X D

[0053] Its inductive reactance can perfectly cancel the capacitive input impedance of the rectifier diode, thus suppressing harmonic generation to the greatest extent. However, due to the parasitic parameters of the diode itself and the parameter errors caused by the final board fabrication, it is difficult to obtain a perfect Z2. Therefore, the following design principles must be followed in the design (experiments show that efficiency is higher under these principles) to ensure good impedance matching as much as possible:

[0054]

[0055] X in the formula D To calculate an approximate value ignoring parasitic parameters based on the parameters given by the manufacturer in the diode's documentation, Z2 is the input impedance of the second harmonic suppression microstrip line obtained from the final ADS software simulation.

[0056] In practical design, firstly, based on microstrip line theory, X... D The estimated value is used to calculate the microstrip line width of the second harmonic suppression microstrip line in reverse, and then the optimal efficiency solution is obtained by optimization in the simulation environment.

[0057] Figure 4 This is a simplified circuit diagram of the present invention. Figure 4 All the connecting lines are microstrip lines, with the impedance matching and harmonic suppression sections specifically highlighted to emphasize their crucial role in this invention. Figure 2 The dimensional parameters shown are very strict, and the diagram indicates the parameters of the lumped components and the model of the rectifier diodes required.

[0058] Please refer to Figure 5 The harmonic analysis diagram of this embodiment is as follows:

[0059] Figure 5 To demonstrate the functionality of the harmonic suppression microstrip line in this embodiment, in the ADS layout simulation, at the fundamental frequency f0 = 2.45 GHz, the input power Pi... n=30dBm, with a load of 110Ω, the measured power spectrum of the rectifier diode output (the diode input and output are connected to the first harmonic suppression microstrip line and the second harmonic suppression microstrip line respectively, which can verify the effect of the harmonic suppression part). The simulation analysis specifically analyzed the power distribution within the 5th harmonic. The power spectrum diagram shows that the power of DC, fundamental frequency, first harmonic, second harmonic, third harmonic, fourth harmonic, and fifth harmonic is: P DC =14.3dBm,

[0060] Depend on Figure 5 As can be seen, the harmonic suppression microstrip line designed in this embodiment effectively controls the second and third harmonics (the second and third harmonics have the greatest impact on the efficiency of the rectifier circuit). This figure also serves as the theoretical basis for obtaining the impedance of the harmonic suppression microstrip line at different frequencies. Based on the specific power attenuation level, the impedance characteristics of the microstrip line at different frequencies can be obtained.

[0061] Please refer to Figure 6 The measured efficiency data for this embodiment are as follows:

[0062] In actual measurements, with a load of 110Ω, the rectifier achieved a rectification efficiency of over 50% in the range of 29dBm to 33dBm (800mW to 2000mW) through the SMA-KHD connector, with a maximum rectification efficiency of 54.2% achieved near 1350mW.

[0063] Please refer to Figure 7 The design flow of the rectifier circuit in this embodiment is as follows:

[0064] First, based on circuit principles... Figure 4After determining the rectifier circuit layout and specific component selection, and designing the microstrip line (excluding the harmonic suppression microstrip line) based on the 50Ω impedance matching principle, the characteristic impedance of the harmonic suppression microstrip line is designed according to the specific parameters of the rectifier diode. The overall layout design is then basically complete. The completed layout design is optimized using finite element simulation in ADS to check if the efficiency meets expectations. If not, components and microstrip lines need to be redesigned. If it meets expectations, the next step is performed. The optimized data is checked to see if the component parameters are reasonable. If parameters cannot be met by existing manufacturing conditions, the parameters are limited and the simulation is repeated to obtain the optimal solution. If the existing parameters meet manufacturing conditions, the parameters are integerized to minimize the impact on the simulation results and meet the processing conditions as much as possible. Then, a DXF file is exported from ADS and imported into AD software for PCB fabrication. Physical measurements are then performed to check if the measured efficiency matches the simulated efficiency. If they do not match, analysis is needed to find the cause of the discrepancy and redesign the circuit, summarizing the lessons learned. If the results match, the high-frequency rectifier circuit design is complete.

[0065] The microwave rectifier circuit of this invention operates as follows:

[0066] This invention is primarily used in microwave wireless power transmission systems for high-power applications, aiming to reduce system weight and cost without compromising system efficiency. The invention is connected to the rear end of the receiving antenna to achieve its rectification function. The SMA-KHD connector can be replaced depending on the specific application. For patch mounting, a 50Ω matching through-hole and silver-plated feed line can be used; similarly, a 50Ω connector can be used to replace the N-type connector.

[0067] In a 2.45GHz microwave wireless power transmission system, the system's energy transmitter emits radio frequency energy in space, forming a high-frequency energy field. The receiving antenna captures this energy, and the high-frequency energy signal is then transmitted to the rectifier circuit via an SMA-KHD. After entering the rectifier circuit, the energy passes through a DC blocking capacitor and is then transmitted via a microstrip line to the HSMS-270B rectifier diode for rectification. Finally, the radio frequency energy is converted into DC power, which is then passed through a filter inductor and delivered to the load for power supply.

[0068] Through the above design, the rectifier circuit of the present invention has the ability to achieve high input power rectification, achieving rectification at a maximum input of 35dBm; the novel rectifier circuit has a wide input power range, achieving rectification within the range of 0dBm to 35dBm; the novel rectifier circuit has high rectification efficiency under high power input, achieving a rectification efficiency of over 50% within the range of 29dBm to 33dBm, with a maximum rectification efficiency of 54.2%. Therefore, compared with the prior art, the present invention has outstanding substantive features and significant progress.

[0069] The above embodiments are merely one of the preferred embodiments of the present invention and should not be used to limit the scope of protection of the present invention. Any modifications or refinements made to the main design concept and spirit of the present invention that are not of substantial significance, but solve the same technical problem as the present invention, should be included within the scope of protection of the present invention.

Claims

1. A high-efficiency 2.45GHz microwave rectifier circuit with high input power, characterized in that, Includes a dielectric substrate (6), a ground copper layer (18) covering the back of the dielectric substrate (6), a green solder mask layer covering the ground copper layer (18), two ground pads (19) formed by opening windows on the surface of the green solder mask layer, an SMA-KHD input socket (1) soldered to the dielectric substrate via the ground pads (19) using soldering, an input microstrip line (2) soldered to the power input feed pin of the SMA-KHD input socket (1), an impedance conversion trapezoidal microstrip line (8) connected to the input microstrip line (2) at its wide end, a first packaging pad (3) for encapsulating a DC blocking capacitor connected to the narrow end of the impedance conversion trapezoidal microstrip line (8), a first transition microstrip line (9) soldered to the DC blocking capacitor at its left end, a filter inductor connection microstrip line (14) connected to the upper end of the first transition microstrip line (9), an impedance matching microstrip line (10) connected to the right end of the first transition microstrip line (9), and an impedance matching microstrip line (10). The microstrip line (10) is connected to a second transition microstrip line (11) on the right, a first harmonic suppression microstrip line (12) with its upper end connected to the lower end of the second transition microstrip line (11) and its lower end open, a rectifier diode (5) with its cathode connected to the right end of the second transition microstrip line (11), a second harmonic suppression microstrip line (13) with its left end connected to the anode of the rectifier diode (5) and its right end shorted to the ground copper layer through a via (7), a second packaging pad (4) for packaging the filter inductor connected to the upper end of the microstrip line (14), an output positive load connection microstrip line (15) connected to the filter inductor at its lower end, and an output negative load connection microstrip line (16) connected to the ground copper layer through multiple load grounding vias (17); wherein, the entire output positive load connection microstrip line serves as the load positive pad, and the entire output negative load connection microstrip line serves as the load negative pad.

2. The high-efficiency 2.45GHz microwave rectifier circuit with high input power according to claim 1, characterized in that, The dielectric substrate (6) has a rectangular structure, is made of FR4, has a dielectric constant of 4.4, a thickness of 0.8 mm, a length L = 25 mm, and a width W = 18 mm. The input microstrip line (2) has a width of W1 = 1.5 mm and a length of L1 = 5 mm; The impedance-converting trapezoidal microstrip line (8) has a width of W1 = 1.5 mm, a width of W2 = 0.65 mm, and a length of L2 = 2.1 mm. The first adapter microstrip line (9) has a width of W4 = 1.5 mm and a length of W3 = 1.48 mm; The impedance matching microstrip line (10) has a width of W4 = 1.5 mm and a length of L4 = 5.05 mm. The first harmonic suppression microstrip line (12) has a width of W5 = 1.48 mm and a length of L5 = 7 mm; The second transition microstrip line (11) has a width of W4 = 1.4 mm and a length of W5 = 1.48 mm; The second harmonic suppression microstrip line (13) has a width of W6 = 4.45 mm and a length of L6 = 4.9 mm; The filter inductor is connected to the microstrip line (14), which has a width of W3 = 1.48 mm and a length of L3 = 2.54 mm; The output positive load is connected to a microstrip line (15), which has a width of W7 = 5 mm and a length of L7 = 2.48 mm. The output negative load is connected to the microstrip line (16), which has a width of W7 = 5 mm and a length of L8 = 0.98 mm. The via (7) connecting the second harmonic suppression microstrip line to the ground copper layer has a diameter of R1 = 0.6 mm; The output negative load is connected to the microstrip line and the load grounding via (17) of the ground copper layer, with a diameter of R2 = 0.3 mm.

3. The high-efficiency 2.45GHz microwave rectifier circuit with high input power according to claim 2, characterized in that, The thickness of the copper ground layer (18) is 0.035 mm.

4. The high-efficiency 2.45GHz microwave rectifier circuit with high input power according to claim 3, characterized in that, Both the first package pad (3) and the second package pad (4) are 0402 package pads.

5. The high-efficiency 2.45GHz microwave rectifier circuit with high input power according to claim 4, characterized in that, The number of load grounding vias (17) connecting the output negative load to the microstrip line (16) and the ground copper layer (18) is 4.

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