Optoelectronic interconnect structure and its fabrication method
By placing the optical interconnect network and the electrical interconnect network on different core layers in the optoelectronic interconnect structure, the problems of substrate warping and limited wiring freedom are solved, and a simple manufacturing process and efficient optoelectronic interconnect are achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HANGZHOU GUANGZHIYUAN TECH CO LTD
- Filing Date
- 2022-09-20
- Publication Date
- 2026-06-30
AI Technical Summary
Existing optoelectronic interconnect structures suffer from problems such as difficult fabrication processes, high risk of warping, and limited freedom of electrical interconnect wiring due to the asymmetric surface structure of the substrate.
Optical interconnect networks and electrical interconnect networks are respectively set on different core layers. By connecting a first substrate with an optical interconnect network and a second substrate with an electrical interconnect network, a substrate with both optical and electrical interconnect functions is formed.
It avoids the risk of substrate warping, increases the wiring freedom of electrical interconnect networks, and simplifies the manufacturing process.
Smart Images

Figure CN117784324B_ABST
Abstract
Citation Information
Patent Citations
Optical interconnecting integrated circuit, method for producing optical interconnecting integrated circuit, photoelectrical apparatus and electronic instrument
CN1469472A
Multi-substrate electro-optical interconnection system
US20150341119A1