Polishing pad, method of manufacturing the same, and method of manufacturing semiconductor device using the same

By spraying calcined cerium dioxide slurry onto the grinding wafer and controlling the pore morphology to meet the ISO25178-2 standard, the problem of difficult pore morphology adjustment in the grinding wafer is solved, improving the grinding rate and wafer surface quality.

CN118061073BActive Publication Date: 2026-05-29SK ENPULSE CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SK ENPULSE CO LTD
Filing Date
2021-06-21
Publication Date
2026-05-29

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Abstract

An example of the present invention relates to a polishing pad used in a chemical mechanical planarization (CMP) process of a semiconductor, a method of manufacturing the same, and a method of manufacturing a semiconductor device using the same, the polishing pad of the example of the present invention can improve a polishing rate, and significantly reduce surface residues, surface scratches, and dishing of a wafer by adjusting surface roughness characteristics of the polishing pad after polishing is performed.
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Citation Information

Patent Citations

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  • Method to shape the surface of chemical mechanical polishing pads

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