An infrared optoelectronic memristor and a preparation method thereof

Abstract

The present invention relates to the field of optoelectronic detection technology, and in particular to an infrared optoelectronic memristor and a preparation method thereof. The method includes selecting a strontium titanate substrate for growing a first lead selenide film to obtain a strontium titanate substrate with the first lead selenide film; performing photolithography etching and sensitization treatment on the first lead selenide film to obtain a pre-product with a second lead selenide film, and preparing electrodes thereon to obtain an infrared optoelectronic memristor. Based on the preparation method and the infrared optoelectronic memristor of the present invention, a combined array of infrared optoelectronic memristors can be realized, and the expansibility is strong. The infrared optoelectronic memristor of the present invention has a wide spectral response range, and the response spectral range can cover the visible light band, short-wave infrared, and mid-wave infrared. In addition, the present invention also has the characteristics of low power consumption and energy saving, and the conductance state of the device can be changed by applying a voltage pulse to the source and drain electrodes. The present invention has a large number of adjustable conductance states.

Description

Technical Field

[0001] The present invention relates to the technical field of optoelectronic detection, and particularly to an infrared optoelectronic memristor and a preparation method thereof. Background Art

[0002] A memristor is a non-linear passive bipolar element with a memory function, and its resistance value can change dynamically according to the amount of charge flowing through. The core characteristics of a memristor include non-linear resistance change and memory function, which make it have great potential in the fields of information storage and computing. Especially in the context of the rapid development of artificial intelligence and the Internet of Things, the memristor is considered to be one of the key technologies to break through the bottleneck of the traditional von Neumann architecture.

[0003] An optoelectronic memristor is an innovative device that combines optical signals with the characteristics of a memristor and can regulate the conductance state of the device through optical signals or electrical signals.

[0004] The existing optoelectronic memristors have the following defects:

[0005] (1) It is necessary to process optical signals and electrical signals simultaneously, which increases the complexity of device design and operation and the manufacturing cost is high;

[0006] (2) Most of its optical signal response bands are concentrated in the visible light band, and the performance is not good in some cases where there is visible light noise interference or poor lighting;

[0007] (3) The integration degree is not high. Summary of the Invention

[0008] The present invention aims to at least improve one of the technical problems existing in the prior art. For this purpose, the present invention provides an infrared optoelectronic memristor and a preparation method thereof.

[0009] The technical solution of the present invention is as follows:

[0010] A preparation method of an infrared optoelectronic memristor, including:

[0011] Selecting a strontium titanate substrate for the growth of a first lead selenide film to obtain a strontium titanate substrate with a first lead selenide film;

[0012] Performing photolithography etching on the first lead selenide film to obtain a pre-product;

[0013] Defining a sensitization region, and selecting a first region at any end of the first lead selenide film as the sensitization region;

[0014] Performing sensitization treatment on the sensitization region of the first lead selenide film to obtain a pre-product with a second lead selenide film;

[0015] Preparing electrodes according to the pre-product with the second lead selenide film to obtain an infrared optoelectronic memristor.

[0016] In a possible technical solution, further, the sensitization treatment includes photolithography and oxygen plasma introduction, specifically:

[0017] After applying photoresist to the first region, photolithography and development are carried out to obtain a preform of the sensitized region;

[0018] The preform is placed in an etching machine and oxygen plasma is introduced according to a first preset condition to complete the sensitization treatment process, so as to ensure that the target region is sensitized while protecting the remaining regions.

[0019] In a possible technical solution, further, the channel length of the first lead selenide film after etching is 10 nm to 20 nm, so that the prepared infrared optoelectronic memristor has high performance and low power consumption.

[0020] In a possible technical solution, further, the first preset condition includes:

[0021] The output power of the etching machine is 75 W;

[0022] The duration of oxygen plasma treatment is 600 s.

[0023] In a possible technical solution, further, the photolithography and etching of the first lead selenide film further includes:

[0024] Photoresist is dropped on the first lead selenide film and spin-coated using a spin coater to obtain a spin-coated film;

[0025] The spin-coated film is placed on a heating device at a first temperature and heated for a first preset time to dry and stabilize the photoresist;

[0026] The spin-coated film is subjected to photolithography exposure and development.

[0027] In a possible technical solution, further, the photolithography and etching of the first lead selenide film further includes argon plasma etching:

[0028] The developed spin-coated film is placed in an etching machine and argon plasma etching is carried out under a first preset condition to mechanically remove the remaining lead selenide film;

[0029] The photoresist is removed according to the spin-coated film after argon plasma etching to obtain a preform.

[0030] In a possible technical solution, further, the electrode is a gold electrode with a thickness of 70 nm to 90 nm, which can ensure good electrical performance while controlling costs.

[0031] An infrared optoelectronic memristor, which is prepared by the method as described above, and the infrared optoelectronic memristor includes:

[0032] Strontium titanate substrate;

[0033] A first lead selenide film located on the surface of the strontium titanate substrate, and either end of the first lead selenide film is sensitized to obtain a second lead selenide film;

[0034] Two gold electrodes, one of which is located on the surface of the second lead selenide film, and the other is located at the end of the first lead selenide film far from the second lead selenide film.

[0035] According to the preparation method of the infrared optoelectronic memristor of the present invention, an infrared optoelectronic memristor with a simple structure can be prepared. The infrared optoelectronic memristor has a simple two-terminal structure. Based on the infrared optoelectronic memristor of the present invention, a combined array of infrared optoelectronic memristors can be realized, and the scalability is strong. The infrared optoelectronic memristor of the present invention has a wide spectral response range, and the response spectral range can cover the visible light band, short-wave infrared, and mid-wave infrared. In addition, the present invention also has the characteristics of low power consumption and energy saving, and the conductance state of the device can be changed by applying a voltage pulse to the source and drain electrodes. The present invention has a large number of adjustable conductance states, and the number of distinguishable different conductance states is greater than ten.

[0036] A computer device, which includes a memory and a processor. The memory stores a computer program, and when the processor executes the computer program, the above-mentioned preparation method of the infrared optoelectronic memristor is realized.

[0037] A computer storage medium, wherein the computer storage medium stores instructions, and when the instructions are executed on a computer, the computer is made to execute the above-mentioned preparation method of the infrared optoelectronic memristor.

[0038] The additional aspects and advantages of the present invention will be partially given in the following description, partially become obvious from the following description, or be understood through the practice of the present invention. Description of the Drawings

[0039] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0040] Figure 1 It is a flowchart of the preparation method of the infrared optoelectronic memristor according to the embodiment of the present invention;

[0041] Figure 2 It is a schematic structural diagram of the preparation process of the infrared optoelectronic memristor according to the embodiment of the present invention;

[0042] Figure 3It is the I-V characteristic curve graph of the PbSe thin film infrared optoelectronic memristor obtained by the preparation method based on Embodiment 1 of the present invention.

[0043] Figure 4 It is the I-t curve graph of the PbSe thin film infrared optoelectronic memristor obtained by the preparation method based on Embodiment 1 of the present invention.

[0044] Figure 5 It is the test graph of the switching stability of two conductance states of the PbSe thin film infrared optoelectronic memristor obtained by the preparation method based on Embodiment 1 of the present invention.

[0045] Figure 6 It is the test graph of the switching stability of multiple conductance states of the PbSe thin film infrared optoelectronic memristor obtained by the preparation method based on Embodiment 1 of the present invention.

[0046] Figure 7 It is the I-V curve graph of two conductance states of the PbSe thin film infrared optoelectronic memristor obtained by the preparation method based on Embodiment 1 of the present invention under the condition of with or without 4um laser irradiation.

[0047] Reference numerals:

[0048] Strontium titanate substrate 10, first lead selenide film 20, second lead selenide film 30, gold electrode 40. Detailed implementation manners

[0049] The embodiments of the present invention will be described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0050] It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element or there may also be a middle element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be a middle element at the same time.

[0051] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which the present invention belongs. The terms used in the description of the present invention in this specification are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0052] In the description, claims and drawings of this application, the terms "first", "second", "third", etc. are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "comprise" and "have" and any variations thereof are intended to cover non-exclusive inclusion. For example, a series of steps or units are included, or optionally, steps or units not listed are further included, or optionally other steps or units inherent to these processes, methods, products or devices are further included.

[0053] Only parts related to this application are shown in the drawings, rather than all content. Before discussing the exemplary embodiments in more detail, it should be mentioned that some exemplary embodiments are described as processes or methods depicted as flowcharts. Although the flowcharts describe the operations (or steps) as sequential processes, many of the operations can be performed in parallel, concurrently or simultaneously. In addition, the order of the operations can be rearranged. The process can be terminated when its operations are completed, but there can also be additional steps not included in the drawings. The process can correspond to a method, function, procedure, subroutine, subprogram, etc.

[0054] The terms "component", "module", "system", "unit", etc. used in this specification are used to represent computer-related entities, hardware, firmware, combinations of hardware and software, software, or software in execution. For example, a unit can be, but is not limited to, a process running on a processor, a processor, an object, an executable file, an execution thread, a program, and / or distributed between two or more computers. In addition, these units can be executed from various computer-readable media on which various data structures are stored. A unit can communicate, for example, through local and / or remote processes according to a signal having one or more data packets (such as data from a second unit interacting with a local system, a distributed system, and / or a network. For example, the Internet interacting with other systems through a signal).

[0055] Embodiment 1

[0056] Refer to Figures 1 to 7 As shown, this embodiment provides a method for preparing an infrared optoelectronic memristor, which includes:

[0057] S1, select a strontium titanate substrate for the growth of a first lead selenide film to obtain a strontium titanate substrate containing the first lead selenide film. In this embodiment, a layer of ultra-thin PbSe film is grown on a strontium titanate substrate with a crystal plane of (100) using a high-vacuum chemical vapor deposition technique to obtain a strontium titanate substrate with a PbSe film. The lattice coefficients of strontium titanate and lead selenide match, which is suitable for growing a lead selenide film;

[0058] S2, perform photolithographic etching on the first lead selenide film to obtain a pre-product, which is used to remove the interference of lead selenide in other areas and retain the area to be sensitized;

[0059] S3, define the sensitization area, and select the first area at any end of the first lead selenide film as the sensitization area;

[0060] S4, perform sensitization treatment on the sensitization area of the first lead selenide film to obtain a pre-product containing the second lead selenide film;

[0061] S5, prepare an electrode according to the pre-product containing the second lead selenide film to obtain an infrared optoelectronic memristor.

[0062] It should be noted that the sensitization treatment includes photolithographic development and introduction of oxygen plasma. Specifically:

[0063] Apply photoresist to the first area and then perform photolithographic development to obtain a pre-product of the sensitization area;

[0064] Put the pre-product into an etching machine and introduce oxygen plasma according to the first preset conditions to complete the sensitization treatment process, so as to ensure that the target area is sensitized while protecting other areas.

[0065] It should be noted that the chemical vapor deposition includes the following steps: Put a strontium titanate substrate, 0.2 grams of lead selenide powder and 0.4 grams of selenium powder into the chemical vapor deposition furnace in sequence, adjust the positions of the strontium titanate substrate, lead selenide powder and selenium powder, evacuate the furnace body of the chemical vapor deposition furnace, then introduce argon gas, control the gas flow rate to be 30 sccm, and start heating. The heat treatment process is that the starting temperature is room temperature, the termination temperature is 750 °C, and the heating rate ≤ 10 °C / min. The temperature maintenance time is 5 minutes.

[0066] It should be noted that the length of the first lead selenide film of the pre-product is about 50 nm, the width is about 20 nm, and the channel length is 10 nm - 20 nm, so that the prepared infrared optoelectronic memristor has high performance and low power consumption.

[0067] It should be noted that the size of the first area is about one-third to one-half of the surface area of the first lead selenide film after etching, so as to make the prepared electrode more stable and reliable.

[0068] It should be noted that the first preset conditions are to set the power parameter of the etching machine to 75 W and the processing time of introducing oxygen plasma to 600 s.

[0069] It should be noted that the photolithographic etching of the first lead selenide film also includes:

[0070] Drop the photoresist on the first lead selenide film and spin coat it using a spin coater to obtain a spin-coated wafer.

[0071] Place the spin-coated wafer on a heating device at a first temperature and heat it for a first preset time to dry and stabilize the photoresist.

[0072] Perform photolithographic exposure and development on the spin-coated wafer.

[0073] It should be noted that the photolithographic etching of the first lead selenide film also includes argon plasma etching:

[0074] Place the developed spin-coated wafer in an etching machine and perform argon plasma etching under a first preset condition to mechanically remove the remaining lead selenide film.

[0075] Remove the photoresist according to the spin-coated wafer after argon plasma etching to obtain a pre-product.

[0076] It should be noted that the electrode is a gold electrode with a thickness of 70 nm to 90 nm, which can ensure good electrical performance while controlling costs.

[0077] This embodiment provides a specific preparation process for a lead selenide (PbSe) thin film infrared photoelectric memristor, as Figure 2 shown. The preparation of the lead selenide thin film infrared photoelectric memristor includes the following steps:

[0078] Step 1: Grow a lead selenide thin film. Select a strontium titanate substrate and grow a lead selenide thin film on its surface. Specifically,

[0079] Along the flow direction of the carrier gas from upstream to downstream, select 0.2 g of lead selenide (concentration of 99.99%) as the evaporation source material and place it at the center of a 12-inch horizontal tube furnace. Select 0.4 g of selenium powder as the sulfur powder compensation source and place it at the front of the furnace.

[0080] The purchased (100)-plane strontium titanate substrate is set at the end of the horizontal tube furnace, and the end is 10 cm away from the outlet of the horizontal tube furnace. After sealing the horizontal tube furnace, use a mechanical pump and a molecular pump to evacuate the inside of the horizontal tube furnace to a vacuum degree of 110 -3 Pa, and control the flow rate of the carrier gas to be 30 sccm. Set the heating temperature of the sulfur powder compensation source to 300 °C, the heating temperature of the PbSe powder to 750 °C, and the temperature of the strontium titanate substrate to 450 °C.

[0081] The time for the horizontal tube furnace to heat up from room temperature to the heating temperature of the PbSe powder (750 °C) is 75 min. After the vapor formed by the reaction source and selenium powder is transported to the surface of the strontium titanate substrate by the carrier gas for 5 min, the heating power supply of the horizontal tube furnace is cut off, and the furnace body is naturally cooled to room temperature (the room temperature in this embodiment usually refers to 20 °C - 25 °C indoors) to obtain an ultrathin PbSe film.

[0082] Step 2: Lithography and etching to form small-sized rectangular PbSe films (at this time, device arrays can be selected for preparation). Specifically:

[0083] Drop an appropriate amount of photoresist (model 5214) on the PbSe film, and use a spin coater to coat it evenly. The rotation speed of the spin coater is set to 6000 revolutions per minute, and the time is set to 1 minute. Then place it on a heating table at 100 °C and heat for 60 s;

[0084] Use a mask aligner for lithography exposure. After lithography, use NMD-3 developer for development. At this time, the photoresist on the small-sized rectangular PbSe film is removed;

[0085] Put it into an etching machine and use argon plasma for etching. When etching, set the output power of the etching machine to 300 W and the time to 10 minutes.

[0086] Take out the etched PbSe film, and use acetone to remove the remaining photoresist to obtain a small-sized rectangular PbSe film.

[0087] Step 3: Sensitization treatment in one end area of the PbSe film. Specifically:

[0088] Repeat the lithography and development method in Step 2 to remove the photoresist in the area to be sensitized, and then put it into an etching machine and use oxygen plasma for sensitization treatment. When sensitization treatment, set the output power of the etching machine to 75 W and the time to 10 minutes. Take out the sensitized PbSe film, and use acetone to remove the remaining photoresist to obtain a small-sized rectangular PbSe film sensitized at one end.

[0089] Step 4: Fabricate electrodes at both ends of the surface of the small-sized rectangular PbSe film. Specifically:

[0090] Drop an appropriate amount of photoresist (model LOR5A) on the surface of the small-sized rectangular PbSe film sensitized at one end and perform spin coating;

[0091] Place the spin-coated small-sized rectangular PbSe film on a heating table at 160 °C and heat for 300 s, then drop an appropriate amount of photoresist (model 5214) and perform secondary spin coating;

[0092] Place the small-sized rectangular PbSe thin film after the second spin coating treatment on a heating stage at 100 °C and heat it for 60 seconds for the second time;

[0093] Perform photolithographic exposure on the small-sized rectangular PbSe thin film after the second heating using a photolithography machine, and then use a developer (model NMD-3) to remove the photoresist in the electrode regions designed at both ends;

[0094] Put the sample after removing the photoresist in the electrode regions into an electron beam evaporation device to evaporate gold electrodes. After evaporation is completed, take it out and use acetone to remove the remaining photoresist. Finally, obtain a PbSe thin film infrared photoresistive memory device. In this embodiment, (the evaporation thickness of the gold electrodes is preferably 80 nm).

[0095] Perform performance testing on the PbSe thin film infrared photoresistive memory device prepared by the preparation method of this embodiment, and its test results Figures 3 to 7 are shown as follows:

[0096] Figure 3 This is the I-V characteristic curve of the PbSe thin film infrared photoresistive memory device obtained by this preparation method in this example. It can be shown from the figure that the PbSe thin film of this infrared photoresistive memory device has memristive characteristics.

[0097] Figure 4 This is the I-t curve of the PbSe thin film infrared photoresistive memory device obtained by this preparation method in this example. The stability of the same infrared photoresistive memory device in two different conductance states is tested. By applying a bias voltage of 0.05 V, two different conductance states of the device are read. The results are as Figure 4 shown, indicating that the two conductance states of the device are relatively stable within 1000 s.

[0098] Figure 5 This is the stability test of the switching between two conductance states of the PbSe thin film infrared photoresistive memory device obtained by this preparation method in this example. By alternately applying positive voltage pulses and negative voltage pulses, the conductance state of the device is switched back and forth, where the reading voltage is 0.05 V.

[0099] Figure 6 This is the stability test of the switching between multiple conductance states of the PbSe thin film infrared photoresistive memory device obtained by this preparation method in this example. By repeatedly applying positive voltage pulses (voltage value 1.5 V, interval 0.1 s), multiple continuously increasing conductance states are obtained. Each rising small dot in the figure corresponds to a conductance state. It can be seen from the figure that the number of distinguishable different conductance states is more than ten; then, by repeatedly applying negative voltage pulses, multiple continuously decreasing conductance states are obtained. The abscissa represents the number of pulses, the equilateral triangle represents the application of positive voltage pulses, the inverted equilateral triangle represents the application of negative voltage pulses, and the reading voltage is 0.05 V.

[0100] Figure 7 The I-V curves of two conductance states of the PbSe thin film infrared optoelectronic memristor obtained by this preparation method in this example under the irradiation of a 4-μm laser and without it. The dotted line in the figure represents the dark environment without the irradiation of a 4-μm laser, and the solid line represents the situation with the irradiation of a 4-μm laser. Among them, the circles represent the low-resistance state, and the squares represent the high-resistance state.

[0101] In summary, according to the preparation method of the infrared optoelectronic memristor in the embodiment of the present invention, an infrared optoelectronic memristor with a simple structure can be prepared. The infrared optoelectronic memristor has a simple two-terminal structure. Based on the infrared optoelectronic memristor of the present invention, a combined array of infrared optoelectronic memristors can be realized, and the scalability is strong. The infrared optoelectronic memristor of the present invention has a wide spectral response range, and its response spectral range covers the visible light band, short-wave infrared, and mid-wave infrared. In addition, the present invention also has the characteristics of low power consumption and energy saving. The conductance state of the device can be changed by applying a voltage pulse of 1.5 V and 0.1 s between the source and the drain. The present invention has a large number of adjustable conductance states, and the number of distinguishable different conductance states is more than ten.

[0102] Example 2

[0103] This embodiment provides an infrared optoelectronic memristor, which is prepared by the method as described above. The infrared optoelectronic memristor includes:

[0104] A strontium titanate substrate 10;

[0105] A first lead selenide film 20, located on the surface of the strontium titanate substrate 10, and one end of the first lead selenide film 20 is sensitized to obtain a second lead selenide film 30;

[0106] Two gold electrodes 40, one of which is located on the surface of the second lead selenide film 30, and the other is located at the end of the first lead selenide film 20 far from the second lead selenide film 30.

[0107] According to the preparation method of the infrared optoelectronic memristor in the embodiment of the present invention, an infrared optoelectronic memristor with a simple structure can be prepared. The infrared optoelectronic memristor has a simple two-terminal structure. Based on the infrared optoelectronic memristor of the present invention, a combined array of infrared optoelectronic memristors can be realized, and the scalability is strong. The infrared optoelectronic memristor of the present invention has a wide spectral response range, and its response spectral range covers the visible light band, short-wave infrared, and mid-wave infrared. In addition, the present invention also has the characteristics of low power consumption and energy saving. The conductance state of the device can be changed by applying a voltage pulse of 1.5 V and 0.1 s between the source and the drain. The present invention has a large number of adjustable conductance states, and the number of distinguishable different conductance states is more than ten.

[0108] Example 3

[0109] This embodiment provides a computer device, which includes a memory and a processor. The memory stores a computer program, and when the processor executes the computer program, it implements each process of the above-mentioned infrared optoelectronic memristor preparation method. To avoid repetition, it will not be elaborated here.

[0110] The computer device in this embodiment can also be a component in a terminal, an integrated circuit, or a chip. This device can be a mobile electronic device or a non-mobile electronic device. Exemplarily, the mobile electronic device can be a mobile phone, a tablet computer, a laptop computer, a handheld computer, an ultra-mobile personal computer (UMPC), a netbook, or a personal digital assistant (PDA), etc. The non-mobile electronic device can be a server, a Network Attached Storage (NAS), etc. The embodiments of the present application do not make specific limitations.

[0111] Embodiment 4

[0112] This embodiment provides a computer storage medium. The computer storage medium stores instructions, and when the instructions are executed on a computer, the computer is made to execute the above-mentioned infrared optoelectronic memristor preparation method. The computer storage medium is a computer-readable storage medium, such as a computer Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disc, etc.

[0113] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by terms such as "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the invention.

[0114] In the description of this specification, the description with reference to terms such as "one embodiment", "some embodiments", "schematic embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example.

[0115] Obviously, the described embodiments are only a part of the embodiments of this application, rather than all embodiments. The mention of "embodiment" in this article means that the specific features, structures, or characteristics described in connection with the embodiment can be included in at least one embodiment of this application. The appearance of this phrase in various positions in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. Those skilled in the art can explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of this application.

[0116] Although the embodiments of the present invention have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and purposes of the present invention. The scope of the present invention is defined by the claims and their equivalents.

Claims

1. A method for preparing an infrared photoelectric memristor, characterized in that: include: Selecting a strontium titanate substrate to grow a first lead selenide film to obtain a strontium titanate substrate containing the first lead selenide film; Performing photolithography and etching on the first lead selenide film to obtain a pre-finished product; defining a sensitized region, and selecting a first region at either end of the first lead selenide film as the sensitized region; The sensitized area is subjected to a sensitization treatment to obtain a pre-finished product containing a second lead selenide film, wherein the sensitization treatment includes photolithography development and introduction of oxygen plasma, specifically: After coating the first region with photoresist, performing photolithography development to obtain a pre-finished product of the sensitized region; The pre-finished product is placed in an etcher and oxygen plasma is introduced according to a first preset condition to complete a sensitization process, wherein the first preset condition includes: an output power of the etcher is 75W, and a treatment time of oxygen plasma is 600s; Electrodes are prepared according to the pre-finished product containing the second lead selenide film to obtain an infrared photoelectric memristor.

2. The method for preparing an infrared photoelectric memristor according to claim 1, characterized in that: The channel length of the first lead selenide film after etching is 10nm to 20nm.

3. The method for preparing an infrared photoelectric memristor according to claim 2, characterized in that: Photolithography etching the first lead selenide film further includes: Dropping photoresist on the first lead selenide film and coating it evenly to obtain a uniform film; Placing the uniform slice on a heating device at a first temperature and heating for a first pre-preparation time; The uniform slice is subjected to photolithography exposure and development.

4. The method for preparing an infrared photoelectric memristor according to claim 3, characterized in that: The photolithography etching of the first lead selenide film further includes argon plasma etching: Placing the developed uniform slice in an etcher to perform argon plasma etching under a first preset condition; The photoresist is removed from the slice after the argon plasma etching to obtain a pre-finished product.

5. The method for preparing an infrared photoelectric memristor according to claim 1, characterized in that: The electrode is a gold electrode with a thickness of 70nm to 90nm.

6. An infrared photoelectric memristor, characterized in that: Prepared by the method according to any one of claims 1 to 5, the infrared photoelectric memristor comprises: Strontium titanate substrate; A first lead selenide film is located on the surface of the strontium titanate substrate, and either end of the first lead selenide film is sensitized to obtain a second lead selenide film; Two gold electrodes, one of which is located on the surface of the second lead selenide film, and the other is located at the end of the first lead selenide film away from the second lead selenide film.

7. A computer device, characterized in that: The method comprises a memory and a processor, wherein the memory stores a computer program, and the processor implements the infrared photoelectric memristor preparation method according to any one of claims 1 to 5 when executing the computer program.

8. A computer storage medium, characterized in that The computer storage medium stores instructions, and when the instructions are executed on a computer, the computer executes the infrared photoelectric memristor preparation method according to any one of claims 1 to 5.

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