High dynamic range imaging system

Abstract

The present invention relates to the field of high dynamic range imaging, and in particular to a high dynamic range imaging system. The system comprises a secondary power conversion module, an optical lens, an electron bombardment device, and a detector processing board. The secondary power conversion module simultaneously supplies power to the electron bombardment device and the detector processing board. The electron bombardment device comprises a photocathode and a back-illuminated TDICMOS detector. The detector processing board comprises a detector driver and an imaging controller. The optical lens focuses incident light onto the photocathode, accelerates it via high voltage, and the high-speed electrons output by the photocathode bombard the back-illuminated TDICMOS detector to generate electron multiplication. The imaging controller receives externally input imaging parameters, sets the current line period, integration level, pixel gain, analog gain, and electron bombardment voltage, and outputs an electron bombardment voltage control signal to the secondary power conversion module and a detector drive control signal to the detector driver. The present invention is capable of detecting weak light.

Description

Technical Field

[0001] The present invention belongs to the technical field of high dynamic range imaging, and in particular relates to a high dynamic range imaging system. Background Art

[0002] EBAPS (Electron Bombarded Active Pixel Sensor) is an electron-bombarded active pixel sensor. As a new type of digital night vision imaging device, EBAPS offers low readout noise and high resolution, making it particularly suitable for video imaging in extremely low illumination conditions. EBAPS devices have been widely used internationally in nighttime target observation, field operations, exploration, night photography, submarine operations, detection, search and rescue, scientific research, and bioluminescence detection.

[0003] For incident light with energy weaker than 10 -5 Conventional ICCD (Intensified Charge-Coupled Device) and ICMOS (Integrated Complementary Metal-Oxide-Semiconductor) detectors are also unable to detect lux. Furthermore, for high-line or high-frame-rate applications, such as low-orbit satellites that cannot achieve staring imaging through oscillation, high-speed image motion requires a high line or frame rate, which conventional area array detectors cannot meet. Summary of the Invention

[0004] In view of this, the present invention aims to provide a high dynamic range imaging system to solve the technical problem that traditional ICCD detectors and ICMOS detectors cannot detect weak light.

[0005] To achieve the above object, the technical solution created by the present invention is implemented as follows:

[0006] A high dynamic range imaging system includes a secondary power conversion module, an optical lens, an electron bombardment device, and a detector processing board; wherein the secondary power conversion module simultaneously supplies power to the electron bombardment device and the detector processing board; the electron bombardment device includes a photocathode and a back-illuminated TDICMOS detector; the detector processing board includes a detector driver and an imaging controller; the optical lens focuses incident light onto the photocathode, which is accelerated by the high voltage between the photocathode and the back-illuminated TDICMOS detector; the high-speed electrons output by the photocathode bombard the back-illuminated TDICMOS detector to generate electron multiplication; the serial image data output by the back-illuminated TDICMOS detector is transmitted to the imaging controller After conditioning, the image data is output; the imaging controller receives external input imaging parameters through the serial bus, sets the current line period (determined by the ground pixel resolution of the corresponding track, not determined by the solar altitude angle of the shooting target and the reflectivity of the ground object), integration series, pixel gain, analog gain, and electron bombardment voltage, and outputs the electron bombardment voltage control signal to the secondary power conversion module and the detector drive control signal to the detector driver. The secondary power conversion module adjusts the electron bombardment voltage of the electron bombardment device according to the electron bombardment voltage control signal, and the detector driver drives the detector drive control signal with amplitude and power before sending it to the back-illuminated TDICMOS detector.

[0007] Furthermore, when When the pixel gain, electron multiplication gain, PGA gain and integration level of the readout amplifier are set to the maximum, the signal-to-noise ratio of the electron bombardment device is and dynamic range They are:

[0008] ;

[0009] ;

[0010] in, is the electron multiplication gain, is the equivalent electron number of the incident light, is the number of electrons corresponding to the dark current of the photocathode, is the number of electrons corresponding to the dark current of the back-illuminated TDICMOS detector, is the pixel gain of the readout amplifier, is the gain value of the PGA amplifier, is the read noise, is the quantization noise, is the amplifier noise, is the additional noise factor of the electron multiplication process, Electron multiplying gain , the gain value of the PGA amplifier , pixel gain of the readout amplifier The corresponding full well charge number when both are set to 1, n is the integration series, is the maximum pixel gain of the readout amplifier, is the maximum value of electron multiplication gain, is the maximum gain of the PGA amplifier, is the maximum value of the integral series;

[0011] when When , set the pixel gain of the readout amplifier, the gain of the PGA amplifier and the integration stage to the maximum, and set the electron multiplying gain to:

[0012] ;

[0013] At this time, the signal-to-noise ratio of the electron bombardment device is and dynamic range They are:

[0014] ; ;

[0015] in, is the minimum value of the electron multiplication gain;

[0016] when When the pixel gain and integration level of the readout amplifier are set to the maximum, the electron multiplication gain is set to the minimum, and the gain of the PGA amplifier is set to:

[0017] ;

[0018] At this time, the signal-to-noise ratio of the electron bombardment device is and dynamic range They are:

[0019] ;

[0020] ;

[0021] when When , set the integration stage to the maximum, the electron multiplication gain and the PGA amplifier gain to the minimum, and the pixel gain of the readout amplifier to:

[0022] ;

[0023] At this time, the signal-to-noise ratio of the electron bombardment device is and dynamic range They are:

[0024] ;

[0025] ;

[0026] in, is the minimum gain of the PGA amplifier;

[0027] when When , the electron multiplication gain, the gain of the PGA amplifier, and the pixel gain of the readout amplifier are set to the minimum, and the integration level is set to:

[0028] ;

[0029] At this time, the signal-to-noise ratio of the electron bombardment device is and dynamic range They are:

[0030] ;

[0031] ;

[0032] in, is the minimum pixel gain of the readout amplifier, is the minimum value of the integral series.

[0033] Furthermore, the priority settings of the electron bombardment power supply, integration level, pixel gain and analog gain of the electron bombardment device are as follows:

[0034] When the grayscale value of the image output by the back-illuminated TDICMOS detector is saturated, the electron bombardment power supply of the electron bombardment device is reduced until the electron bombardment power supply is turned off, and it is determined whether the image output by the back-illuminated TDICMOS detector is saturated;

[0035] If the grayscale value of the image output by the back-illuminated TDICMOS detector is still saturated after the electron bombardment power supply is turned off, reduce the analog gain until the analog gain is set to the lowest value to determine whether the image output by the back-illuminated TDICMOS detector is saturated;

[0036] If the grayscale value of the image output by the back-illuminated TDICMOS detector still appears saturated after the analog gain is set to the lowest value, reduce the pixel gain until the pixel gain is set to the lowest value to determine whether the image output by the back-illuminated TDICMOS detector appears saturated;

[0037] If the grayscale value of the image output by the back-illuminated TDICMOS detector is still saturated after the pixel gain is set to the lowest value, the integration level is reduced until the integration level is set to the lowest value.

[0038] Furthermore, heat conducting blocks for heat conduction are respectively connected to the back of the photocathode and the back of the back-illuminated TDICMOS detector.

[0039] Compared with the prior art, the present invention can achieve the following beneficial effects:

[0040] 1. Use back-illuminated TDICMOS detectors with low readout noise and low dark noise to replace traditional CMOS detectors. On the one hand, it can reduce noise. On the other hand, it can increase the total integration time by using a high integration series to collect more light energy, thereby improving the signal-to-noise ratio.

[0041] 2. Back-illuminated TDICMOS detectors are linear array detectors, while CMOS detectors are area array detectors. Using linear array detectors to replace area array detectors can make up for the defect of too short integration time and too low signal-to-noise ratio in the staring imaging mode. For example, low-orbit imaging applications require high line frequency or high frame rate, while conventional area array detectors do not meet the requirements of high frame rate applications.

[0042] 3. Through the multiplication function of electron bombardment, the equivalent readout noise, dark noise and quantization noise of the detector can be effectively reduced, thereby obtaining a high signal-to-noise ratio under weak light.

[0043] 4. Using highly integrated TDICMOS detectors, compared to some APS chips with analog differential output, it directly outputs digital image data without the need for voltage following, differential amplification and analog-to-digital state, which can improve the system integration.

[0044] 5. Cooling the photocathode and back-illuminated TDICMOS detector separately through thermal blocks can further reduce dark noise, thereby improving the signal-to-noise ratio and dynamic range of the imaging system. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] The accompanying drawings, which constitute part of the present invention, are intended to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are intended to explain the present invention and do not constitute an undue limitation of the present invention. In the accompanying drawings:

[0046] Figure 1 Schematic diagram of the structure of the imaging system of the detector according to the embodiment of the present invention.

[0047] The reference numerals include: secondary power conversion module 1 , optical lens 2 , electron bombardment device 3 , photocathode 31 , back-illuminated TDICMOS detector 32 , detector processing board 4 , detector driver 41 and imaging controller 42 . DETAILED DESCRIPTION

[0048] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and do not constitute a limitation of the present invention.

[0049] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0050] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first", "second" and the like are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, features defined as "first", "second" and the like may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0051] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; and they can refer to internal connections between two components. Those skilled in the art can understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0052] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0053] like Figure 1As shown, the high dynamic range imaging system provided by the embodiment of the present invention includes a secondary power conversion module 1, an optical lens 2, an electron bombardment device 3 and a detector processing board 4; wherein the secondary power conversion module 1 simultaneously supplies power to the electron bombardment device 3 and the detector processing board 4; the electron bombardment device 3 includes a photocathode 31 and a back-illuminated TDICMOS detector 32, and the photocathode 31 and the back-illuminated TDICMOS detector 32 are sealed as a whole to form a sealed electron bombardment device 3; the detector processing board 4 includes a detector driver 41 and an imaging controller 42; the optical lens 2 focuses the incident light onto the photocathode 31, and the high voltage between the photocathode 31 and the back-illuminated TDICMOS detector 32 is used to accelerate the incident light, and the high-speed electrons output by the photocathode 31 bombard the back-illuminated TDICMOS detector 32. Electron multiplication occurs on the TDICMOS detector 32, thereby collecting more electrons. The serial image data output by the back-illuminated TDICMOS detector 32 is conditioned by the imaging controller 42 and then output as image data. The imaging controller 42 receives external input imaging parameters through a serial bus, sets the current line period, integration level, pixel gain, analog gain, and electron bombardment voltage, and outputs an electron bombardment voltage control signal to the secondary power conversion module 1 and a detector drive control signal to the detector driver 41. The secondary power conversion module 1 adjusts the electron bombardment voltage of the electron bombardment device 3 according to the electron bombardment voltage control signal, and the detector driver 41 drives the detector drive control signal in amplitude and power before sending it to the back-illuminated TDICMOS detector 32.

[0054] In order to improve the dynamic range of the high dynamic range imaging system, a heat conductive block is connected to the back of the photocathode 31 and the back of the back-illuminated TDICMOS detector 32 respectively. The heat conduction between the photocathode 31 and the back-illuminated TDICMOS detector 32 can be achieved through the two heat conductive blocks, thereby reducing the operating temperature of the photocathode 31 and the back-illuminated TDICMOS detector 32.

[0055] The imaging controller 42 uses the FPGA6vlx550tff1760 from Xilinx; the back-illuminated TDICMOS detector 32 uses a detector customized by Changguang Chenxin; the electron bombardment device 3 uses a product of Northern Night Vision Technology Co., Ltd.; the secondary power conversion module 1 uses the power module from the 510 Institute; and the detector driver 41 uses the 16424 chip from ST.

[0056] For push-broom imaging, rather than relative static imaging, in Earth observation, a back-illuminated TDICMOS detector 32 with low readout noise and dark noise replaces the traditional planar array detector. The back-illuminated TDICMOS detector 32 is a linear array detector that can compensate for the short integration time and low signal-to-noise ratio associated with staring imaging mode. The back-illuminated TDICMOS detector 32 directly outputs digital differential signals, rather than analog differential signals. This eliminates the need for voltage following, differential amplification, and analog-to-digital switching, improving system integration.

[0057] Priority settings for electron bombardment power supply, integration level, pixel gain, and analog gain of electron bombardment device 3:

[0058] (1) When the grayscale value of the image output by the back-illuminated TDICMOS detector 32 is saturated, the electron bombardment power supply of the electron bombardment device 3 is reduced until the electron bombardment power supply is turned off, and it is determined whether the image output by the back-illuminated TDICMOS detector 32 is saturated.

[0059] (2) If the grayscale value of the image output by the back-illuminated TDICMOS detector 32 is still saturated after the electron bombardment power supply is turned off, the analog gain is reduced until the analog gain is set to the lowest value to determine whether the image output by the back-illuminated TDICMOS detector 32 is saturated.

[0060] (3) If the grayscale value of the image output by the back-illuminated TDICMOS detector 32 is still saturated after the analog gain is set to the lowest value, the pixel gain is reduced until the pixel gain is set to the lowest value, and it is determined whether the image output by the back-illuminated TDICMOS detector 32 is saturated.

[0061] (4) If the grayscale value of the image output by the back-illuminated TDICMOS detector 32 is still saturated after the pixel gain is set to the lowest value, the integration level is reduced until the integration level is set to the lowest value, and it is determined whether the image output by the back-illuminated TDICMOS detector 32 is saturated. If saturation is still present, no subsequent processing is performed.

[0062] The electron bombardment device 3 includes photoelectric conversion, electron multiplication, variable integral series accumulation, adjustable output charge-voltage conversion coefficient and variable analog amplifier gain, so the signal-to-noise ratio of the electron bombardment device 3 is and dynamic range as follows:

[0063] ;

[0064] ;

[0065] Electron bombardment device 3 imaging, is the electron multiplication gain, is the equivalent electron number of the incident light, is the number of electrons corresponding to the dark current of the photocathode 31, is the number of electrons corresponding to the dark current of the back-illuminated TDICMOS detector 32, is the pixel gain of the readout amplifier (related to the charge-to-voltage conversion system), is the gain value of the PGA amplifier (hereinafter referred to as PGA gain), is the square of the readout noise, is the square of the quantization noise, , is the square of the amplifier noise, is the additional noise factor of the electron multiplication process, Electron multiplying gain , the gain value of the PGA amplifier , pixel gain of the readout amplifier The corresponding full well charge number when both are set to 1, and n is the number of integration levels.

[0066] The imaging parameter selection of the electron bombardment device 3 includes the following situations:

[0067] First case:

[0068] when When the maximum pixel gain is used , maximum electron multiplication gain , Maximum PGA gain , the maximum integral series The back-illuminated TDICMOS detector 32 cannot be saturated. , electron multiplication gain , the gain value of the PGA amplifier and the integration series n is set to the maximum. Under the current parameter conditions, the signal-to-noise ratio of the electron bombardment device 3 is obtained. and dynamic range They are:

[0069] ; ;

[0070] in, is the maximum pixel gain of the readout amplifier, is the maximum value of electron multiplication gain, is the maximum value of PGA gain, is the maximum value of the integral series.

[0071] Second case:

[0072] when When the maximum integral series is used , maximum pixel gain , maximum electron multiplication gain and maximum PGA gain When the back-illuminated TDICMOS detector 32 is saturated, the maximum integration level is used. , Maximum PGA gain , maximum pixel gain and minimum electron multiplying gain When the back-illuminated TDICMOS detector 32 is not in saturation, the pixel gain of the readout amplifier is set to , PGA gain and the integration level n is set to the maximum, the electron multiplication gain Set to:

[0073] ;

[0074] Under the current parameters, the signal-to-noise ratio of the electron bombardment device 3 is and dynamic range They are:

[0075] ;

[0076] .

[0077] The third case:

[0078] when When the maximum integral series is used , Maximum PGA gain , maximum pixel gain and minimum electron multiplying gain When the back-illuminated TDICMOS detector 32 is saturated, the highest integration level is used. , minimum electron multiplying gain , maximum pixel gain and minimum PGA gain When the back-illuminated TDICMOS detector 32 is not in saturation, the pixel gain of the readout amplifier is set to and the integration level n is set to the maximum, and the electron multiplication gain is set to To minimize, set the PGA gain Set to:

[0079] ;

[0080] Under the current parameters, the signal-to-noise ratio of the electron bombardment device 3 is and dynamic range They are:

[0081] ;

[0082] .

[0083] The fourth case:

[0084] when When the maximum integral series is used , minimum PGA gain , maximum pixel gain and minimum electron multiplying gain When the back-illuminated TDICMOS detector 32 is saturated, the highest integration level is used. , minimum electron multiplying gain , minimum pixel gain and minimum PGA gain when When the back-illuminated TDICMOS detector 32 is not in saturation, the integration level n is set to the maximum and the electron multiplication gain is set to and PGA gain Set to minimum to set the pixel gain of the readout amplifier to:

[0085] ;

[0086] Under the current parameters, the signal-to-noise ratio of the electron bombardment device 3 is and dynamic range They are:

[0087] ;

[0088] .

[0089] The fifth case:

[0090] when When the maximum integral series is used , minimum PGA gain , minimum pixel gain and minimum electron multiplying gain When the back-illuminated TDICMOS detector 32 is saturated, the minimum integration level is used. , minimum electron multiplying gain , minimum pixel gain and minimum PGA gain When the back-illuminated TDICMOS detector 32 is not in saturation, the electron multiplication gain , PGA gain , pixel gain of the readout amplifier Set to minimum and set the integral series n to:

[0091] ;

[0092] Under the current parameters, the signal-to-noise ratio of the electron bombardment device 3 is and dynamic range They are:

[0093] ;

[0094] ;

[0095] in, is the minimum pixel gain of the readout amplifier, is the minimum value of the integral series.

[0096] By determining the saturation condition of the back-illuminated TDICMOS detector 32 and adjusting the parameters, stable and efficient imaging of the back-illuminated TDICMOS detector 32 under various lighting conditions is achieved, the signal-to-noise ratio and dynamic range are balanced, and image saturation distortion caused by improper parameters is avoided.

[0097] The present invention proposes to use a back-illuminated TDICMOS detector 32 with low readout noise and low dark noise to replace the traditional CMOS detector. In low-light conditions, the electron bombardment multiplication function, TDI integration level, high pixel gain and analog gain are used simultaneously to increase the number of collected electrons to reduce noise, thereby improving the signal-to-noise ratio in low light; in strong light, the electron bombardment multiplication function is canceled, the TDI integration level is reduced, and the pixel gain and analog gain are reduced to obtain the maximum full well and the maximum signal-to-noise ratio.

[0098] It should be understood that the various forms of the processes shown above can be used to reorder, add, or delete steps. For example, the steps described in the present disclosure can be performed in parallel, sequentially, or in a different order, as long as the desired results of the technical solutions disclosed in the present disclosure can be achieved. This is not limited herein.

[0099] The above specific embodiments do not limit the scope of protection of the present invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions may be made based on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention are intended to be included within the scope of protection of the present invention.

Claims

1. A high dynamic range imaging system, characterized in that: It includes secondary power conversion module, optical lens, electron bombardment device and detector processing board; among which, The secondary power conversion module supplies power to both the electron bombardment device and the detector processing board; The electron bombardment devices include photocathodes and back-illuminated TDICMOS detectors; The detector processing board includes a detector driver and an imaging controller; The optical lens focuses the incident light onto the photocathode, which is then accelerated by the high voltage between the photocathode and the back-illuminated TDICMOS detector. The high-speed electrons output by the photocathode bombard the back-illuminated TDICMOS detector to generate electron multiplication. The serial image data output by the back-illuminated TDICMOS detector is conditioned by the imaging controller and then output as image data. The imaging controller receives external input imaging parameters through a serial bus, sets the current line period, integration level, pixel gain, analog gain, and electron bombardment voltage, and outputs an electron bombardment voltage control signal to a secondary power conversion module and a detector drive control signal to a detector driver. The secondary power conversion module adjusts the electron bombardment voltage of the electron bombardment device according to the electron bombardment voltage control signal, and the detector driver drives the detector drive control signal with amplitude and power before sending it to the back-illuminated TDICMOS detector. Priority settings for electron bombardment power supply, integration level, pixel gain, and analog gain of electron bombardment devices: When the grayscale value of the image output by the back-illuminated TDICMOS detector is saturated, the electron bombardment power supply of the electron bombardment device is reduced until the electron bombardment power supply is turned off, and it is determined whether the image output by the back-illuminated TDICMOS detector is saturated; If the grayscale value of the image output by the back-illuminated TDICMOS detector is still saturated after the electron bombardment power supply is turned off, reduce the analog gain until the analog gain is set to the lowest value to determine whether the image output by the back-illuminated TDICMOS detector is saturated; If the grayscale value of the image output by the back-illuminated TDICMOS detector still appears saturated after the analog gain is set to the lowest value, reduce the pixel gain until the pixel gain is set to the lowest value to determine whether the image output by the back-illuminated TDICMOS detector appears saturated; If the grayscale value of the image output by the back-illuminated TDICMOS detector is still saturated after the pixel gain is set to the lowest value, the integration level is reduced until the integration level is set to the lowest value.

2. The high dynamic range imaging system according to claim 1, wherein: when When the pixel gain, electron multiplication gain, PGA gain and integration level of the readout amplifier are set to the maximum, the signal-to-noise ratio of the electron bombardment device is and dynamic range They are: ； ； in, is the electron multiplication gain, is the equivalent electron number of the incident light, is the number of electrons corresponding to the dark current of the photocathode, is the number of electrons corresponding to the dark current of the back-illuminated TDICMOS detector, is the pixel gain of the readout amplifier, is the gain value of the PGA amplifier, is the read noise, is the quantization noise, is the amplifier noise, is the additional noise factor of the electron multiplication process, Electron multiplying gain , the gain value of the PGA amplifier , pixel gain of the readout amplifier The corresponding full well charge number when both are set to 1, n is the integration level, is the maximum pixel gain of the readout amplifier, is the maximum value of electron multiplication gain, is the maximum gain of the PGA amplifier, is the maximum value of the integral series; when When , set the pixel gain of the readout amplifier, the gain of the PGA amplifier and the integration stage to the maximum, and set the electron multiplying gain to: ； At this time, the signal-to-noise ratio of the electron bombardment device is and dynamic range They are: ； ； in, is the minimum value of the electron multiplication gain; when When the pixel gain and integration level of the readout amplifier are set to the maximum, the electron multiplication gain is set to the minimum, and the gain of the PGA amplifier is set to: ； At this time, the signal-to-noise ratio of the electron bombardment device is and dynamic range They are: ； ； when When , set the integration stage to the maximum, the electron multiplication gain and the PGA amplifier gain to the minimum, and the pixel gain of the readout amplifier to: ； At this time, the signal-to-noise ratio of the electron bombardment device is and dynamic range They are: ； ； in, is the minimum gain of the PGA amplifier; when When , the electron multiplication gain, the gain of the PGA amplifier, and the pixel gain of the readout amplifier are set to the minimum, and the integration level is set to: ； At this time, the signal-to-noise ratio of the electron bombardment device is and dynamic range They are: ； ； in, is the minimum pixel gain of the readout amplifier, is the minimum value of the integral series.

3. The high dynamic range imaging system according to claim 1, wherein: The back of the photocathode and the back of the back-illuminated TDICMOS detector are respectively connected with heat-conducting blocks for heat conduction.

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