Ultra-miniature patch fuse structure and production process thereof

Abstract

The invention discloses an ultra-miniature patch fuse structure and a production process thereof. A fuse comprises a ceramic substrate, an inner electrode part, a terminal electrode part, a fuse wire part and a covering protection layer. An inner electrode groove is formed in the side wall of the ceramic substrate, and the inner electrode part comprises a first inner electrode and a second inner electrode; the first inner electrode and the second inner electrode are respectively provided with a fuse wire fixing groove. According to the production process, inner electrode grooves are formed in the two ends of a ceramic substrate, a first inner electrode and a second inner electrode are constructed through metallization wall-hanging treatment, a fuse part is inserted into a fuse fixing groove and connected through thermal ultrasonic or hot pressing bonding, and a protection layer is printed and cured to enhance the insulation performance. According to the invention, through cooperation of the fuse wire fixing grooves, accurate limitation and anti-drop protection of fuse wire component connection points are realized, and the structural stability and the electrical connection reliability between the fuse wire component and the first inner electrode and between the fuse wire component and the second inner electrode are improved.

Description

Technical Field

[0001] The present application relates to the technical field of electronic components, and in particular to an ultra-micro chip fuse structure and a production process thereof. Background Art

[0002] As core protection components in electronic circuits, surface mount fuses are widely used in high-density electronic devices such as communications equipment, smart terminals, medical electronics, automotive electronics, and industrial control. The main function of surface mount fuses is to provide fast-blow protection when overcurrent or short circuit occurs in the circuit. As electronic products develop towards miniaturization, high performance, and high integration, the market has placed higher requirements on the size, performance, and consistency of surface mount fuses. Especially in ultra-micro devices such as 0201 specifications (0.6mm×0.3mm), due to the extremely small physical structure and limited operating space of surface-mount fuses, traditional preparation processes have problems such as poor process precision control and unstable connections. Especially in the fuse construction and internal electrode connection links, tiny parameter deviations will be amplified, seriously affecting the electrical performance and long-term reliability of the product, making it difficult to meet the stringent requirements of modern electronic equipment for high-reliability and miniaturized fuse devices. Summary of the Invention

[0003] In order to improve the defects of existing surface mount fuses in ultra-micro size, such as low manufacturing precision and poor fuse connection stability, the present application provides an ultra-micro chip fuse structure and a production process thereof.

[0004] The present application provides an ultra-micro chip fuse structure and its production process using the following technical solutions: An ultra-micro chip fuse structure comprises a ceramic substrate, an inner electrode component inserted into the ceramic substrate, end electrode components connected to both ends of the ceramic substrate and used to connect to the inner electrode component, a fuse component located between the two end electrode components and used to connect the two inner electrode components, and a covering protective layer covering the periphery of the fuse component and located between the two end electrode components. The side walls of the ceramic substrate are provided with inner electrode grooves respectively located at both ends of the ceramic substrate, and the inner electrode component includes a first inner electrode and a second inner electrode respectively inserted into the two inner electrode grooves; the first inner electrode and the second inner electrode are both provided with fuse fixing grooves, and the two ends of the fuse component are respectively inserted into the fuse fixing grooves on the first inner electrode and the second inner electrode, and the two ends of the fuse component are respectively connected to the first inner electrode and the second inner electrode.

[0005] By adopting the above technical solution, the ceramic substrate is used as the overall supporting structure, and the first inner electrode and the second inner electrode are respectively inserted into the inner electrode grooves provided on the side walls of the ceramic substrate at both ends to achieve stable embedded positioning, and the two ends of the fuse component are respectively inserted into the fuse fixing grooves provided on the first inner electrode and the second inner electrode, thereby achieving precise connection between the fuse component and the inner electrode component, and the end electrode components are respectively connected to the two ends of the ceramic substrate and conductive to the inner electrode component for patch welding of the external circuit, and the covering protective layer is provided on the periphery of the fuse component and between the electrode components at both ends to provide insulation and mechanical protection for the fuse component; the entire structure of the present application realizes precise definition and anti-detachment protection of the connection point of the fuse component through the cooperation of the fuse fixing groove, which not only improves the structural stability and electrical connection reliability between the fuse component and the first inner electrode and the second inner electrode, but also improves the heat resistance, consistency and mass manufacturability of the overall fuse device in high-density installation and miniaturized electronic scenarios.

[0006] Preferably, the first inner electrode and the second inner electrode both include an inner electrode metal layer covering the inner side wall of the inner electrode groove, and a connecting metal layer connected to the inner electrode metal layer and covering the periphery of the opening end of the inner electrode groove; the inner electrode metal layer is connected to the end of the fuse component, and the connecting metal layer is connected to the end electrode component.

[0007] By adopting the above technical solution, the inner electrode metal layer serves as the direct connection surface with the fuse component, and the two ends of the fuse component are respectively welded or bonded to the corresponding inner electrode metal layer to achieve stable conduction, and the inner electrode metal layer extends outward to the open end of the groove and turns to cover a partial area of the surface of the ceramic substrate, thereby forming a connecting metal layer. The connecting metal layer is used to connect with the end electrode component to form a complete electrical path from the fuse component through the inner electrode metal layer and the connecting metal layer to the end electrode component. The structure of the present application realizes a multi-stage reliable conduction connection mode, improves the stability of current transmission and structural strength, and arranges the metal layer in the dual areas of the inner wall of the groove and the open end, which not only expands the effective welding area of the fuse component, improves the bonding consistency and electrical contact area, but also facilitates the positioning and welding operation of the pad of the end electrode component, thereby enhancing the reliable fusing characteristics of the component under overcurrent state and the connection reliability during long-term use while ensuring the compactness of the ultra-micro structure.

[0008] Preferably, the inner electrode groove includes a first inner electrode groove located at one end of the ceramic substrate, and a second inner electrode groove located at the other end of the ceramic substrate; the first inner electrode is inserted into the first inner electrode groove, and the second inner electrode is inserted into the second inner electrode groove.

[0009] By adopting the above technical solution, the first inner electrode is inserted into the first inner electrode groove, and the second inner electrode is inserted into the second inner electrode groove, thereby realizing the symmetrical embedded layout of the inner electrode components on the ceramic substrate; the first inner electrode is tightly fitted to the inner groove wall of the first inner electrode groove, and the second inner electrode is tightly fitted to the inner groove wall of the second inner electrode groove to provide stable support and provide a reference for the subsequent positioning and connection of the fuse component. The embedded structure of the inner electrode component not only improves the structural fixity between the electrode and the substrate, but also helps to control the assembly accuracy and avoid electrode displacement problems caused by thermal expansion, mechanical stress or process deviation, thereby enhancing the overall stability and welding consistency of the fuse connection, thereby improving the structural reliability, electrical conductivity and thermal shock resistance of the ultra-miniature surface mount fuse in high-density assembly and long-term working environments.

[0010] Preferably, the end electrode component includes a first end electrode connected to the first internal electrode, and a second end electrode connected to the second internal electrode.

[0011] By adopting the above technical solution, the first end electrode and the first internal electrode, as well as the second end electrode and the second internal electrode, are conductively connected through the connecting metal layer, thereby realizing a complete current transmission path from the fuse component to the external pad. The end electrode components are arranged on the outside of both ends of the ceramic substrate, and can cover and wrap the ends of the ceramic substrate, ensuring sufficient contact area during mounting and welding. In actual applications, the first end electrode and the second end electrode play the dual functions of stable mechanical connection and electrical lead-out, which not only improves the welding reliability and tensile and shear strength of the device, but also provides a low-impedance path for current conduction. Especially in miniature size, the double-end separate structure effectively reduces the problems of pad offset and cold solder joint caused by high-density packaging, thereby enhancing the reliability and consistency of surface mount fuses in automatic patch production and subsequent circuit operation.

[0012] Preferably, each of the first end electrode and the second end electrode includes an end electrode body connected to the side surface of the end of the ceramic substrate, a connecting side edge connected to one side of the end electrode body and connected to the inner electrode component, and a fixing side edge connected to the other side of the end electrode body and connected to the side wall of the ceramic substrate; The covering protection layer is sleeved around the fuse component, and two ends of the covering protection layer are respectively connected to the connecting side edges on the first end electrode and the second end electrode.

[0013] By adopting the above technical solution, the connecting side edge extends from one side of the end electrode body and is conductively connected to the inner electrode component to form a current lead-out path, while the fixed side edge extends from the other side of the end electrode body and covers the side wall of the ceramic substrate, which is used to achieve mechanical fixation and encapsulation protection with the ceramic substrate; the end electrode body is fixed to the two ends of the ceramic substrate by hot pressing or sputtering, the connecting side edge is conductively connected to the connecting metal layer, and the fixed side edge is adhered to the outer wall of the substrate, thereby forming a stable wrapped connection structure, and at the same time, the covering protective layer is sleeved on the periphery of the fuse component, and the two ends of the covering protective layer are respectively connected to the connecting side edges on the first end electrode and the second end electrode, which not only provides insulation protection and anti-oxidation for the fuse component, but also prevents mechanical stress from directly acting on the fuse contact. The overall structural design effectively improves the mechanical strength, electrical connection stability and packaging sealing of the device through the encapsulating extension and multi-sided support of the electrode side edge.

[0014] A production process for an ultra-micro chip fuse structure includes the ultra-micro chip fuse structure described above, and further includes the following steps: S1: forming two inner electrode grooves at two ends of one side of the ceramic substrate by an etching process; S2: performing a metallization wall forming process on the inner side wall of the inner electrode groove and the periphery of the opening end of the inner electrode groove to form the inner electrode component; S3: inserting the two ends of the fuse component into the two fuse fixing grooves respectively, and connecting the two ends of the fuse component to the first inner electrode and the second inner electrode respectively by thermosonic wedge bonding or thermocompression bonding; S4: Printing a protective layer material around the fuse component and curing the material to form the covering protective layer; S5: dividing the ceramic substrate and performing metal processing on the terminal electrode components to form external electrodes that are conductively connected to the internal electrode components.

[0015] By adopting the above technical solution, in step S1, two inner electrode grooves are formed at both ends of one side of the ceramic substrate through an etching process. In step S2, the inner sidewalls and the peripheral areas of the open ends of the inner electrode grooves are subjected to a metallization wall forming process to form first and second inner electrodes with conductive properties and strong adhesion. In step S3, the two ends of the fuse component are respectively inserted into the fuse fixing slot, and a firm connection between the fuse component and the first and second inner electrodes is achieved through thermosonic wedge bonding or thermocompression bonding. In step S4, a protective layer material is uniformly printed on the peripheral areas of the fuse component to form a covering protective layer, thereby achieving electrical insulation and mechanical protection for the fuse component. In step S5, the ceramic substrate is segmented and a terminal electrode metal layer is applied to both ends of the ceramic substrate to form a first terminal electrode and a second terminal electrode that are conductively connected to the connecting metal layer. Through precise slot forming, attached metallization, electrode embedding and positioning, bonding processes, and a surround-type protective structure, the method of the present application improves the overall process consistency, electrical performance stability, and structural connection reliability of ultra-miniature surface mount fuses.

[0016] Preferably, the etching process in step S1 is photolithography and inductively coupled plasma etching technology.

[0017] By adopting the above-mentioned technical solution, photolithography and inductively coupled plasma etching (ICP) technology are used to perform high-precision forming operations on the internal electrode grooves of the ceramic substrate to form the first internal electrode groove and the second internal electrode groove, which have structural characteristics of controllable depth, neat edges and high verticality. Compared with traditional wet etching, the process of this application can improve the accuracy and consistency of groove size control, avoid processing defects caused by hard and brittle ceramic materials or uneven pitting, thereby providing a stable three-dimensional structural foundation for the subsequent wall metallization and embedding of the internal electrode components, and further improving the positioning accuracy and connection reliability of the internal electrode components and the fuse components.

[0018] Preferably, the metallization wall forming process in step S2 is an atomic layer deposition or physical vapor deposition process.

[0019] By adopting the above technical solution, the metallization wall forming treatment uses atomic layer deposition (ALD) or physical vapor deposition (PVD) process to uniformly deposit metal on the inner side wall and the peripheral area of the opening end of the inner electrode groove; the formed metallization layer is firmly attached to the inner wall and the opening end edge of the first inner electrode groove and the second inner electrode groove formed by the ceramic substrate, ensuring that the metal layer forms a continuous conduction path in the complex structure, thereby constructing the first inner electrode and the second inner electrode with high consistency, high adhesion and low contact resistance. The process steps of this application not only improve the electrical conductivity and thermal stability of the inner electrode components, but also provide a stable metal interface for the precise connection of subsequent fuse components, effectively ensuring the reliable melting behavior of the ultra-micro surface mount fuse and the long-term working performance under high-density packaging.

[0020] Preferably, the thermosonic wedge bonding in step S3 includes the following steps: S301: positioning the bonding position of the fuse component and the inner electrode component by an optical positioning system, and guiding the placement of the fuse component; S302: adjusting the ultrasonic power to a preset value based on the size of the ceramic substrate and the material properties of the metal wire of the fuse component; S303: monitoring and adjusting the pressure in real time through a pneumatic feedback pressure control system so that the bonding pressure is evenly distributed in the contact area between the fuse component and the inner electrode component; S304: Adjust the bonding duration to a preset bonding time.

[0021] By adopting the above technical solution, in S301, a high-precision optical positioning system is used to accurately place the fuse component in the fuse fixing grooves of the first and second inner electrodes to ensure accurate alignment. In S302, the ultrasonic power is adjusted according to the size of the ceramic substrate and the fuse material to achieve effective energy control. In S303, the pressure is dynamically adjusted through the air pressure feedback system to ensure uniform force in the contact area. In S304, the bonding time is controlled within a preset range to avoid thermal damage and improve connection efficiency. This process achieves precise coordinated control in the four dimensions of position, energy, pressure and time, enhancing the electrical reliability and structural stability of the fuse connection, and improving the process consistency and batch manufacturing yield of ultra-micro fuses.

[0022] Preferably, the thermal compression bonding in step S3 includes the following steps: S311: The heating structure and temperature control system of the thermocompression bonding equipment adjust the bonding temperature to a range of 150°C to 250°C and set the temperature uniformity within ±2°C; S312: adjusting the heating temperature and the applied pressure according to the metal properties of the fuse component and the inner electrode component to form an intermetallic compound layer at the contact interface between the fuse component and the inner electrode component; S313: Adjusting temperature, pressure, and time parameters for connection according to the combination type of the fuse material of the fuse component and the material of the inner electrode component.

[0023] By adopting the above technical solution, during the hot compression bonding process, S311 controls the bonding temperature within the range of 150°C to 250°C through the heating structure and temperature control system, and ensures temperature uniformity within ±2°C to prevent cold solder joints or local overheating. S312 accurately adjusts the temperature and pressure according to the metal properties of the fuse component and the internal electrode component, forming a stable intermetallic compound layer at the contact interface, reducing contact resistance and enhancing connection strength. S313 dynamically adjusts the bonding parameters according to different material combinations to ensure reliable connection between multiple metal materials. This process achieves precise adjustment in temperature control, pressure control and material adaptation, improving the metallurgical bonding quality and electrical stability of the fuse connection, and ensuring the long-term reliable operation and manufacturing compatibility of ultra-miniature surface mount fuses in high-density circuits.

[0024] In summary, this application includes at least one of the following beneficial technical effects: 1. An ultra-miniature chip fuse structure, using a ceramic substrate as the overall support structure, with first and second inner electrodes respectively inserted into inner electrode grooves provided on the sidewalls of the ceramic substrate at both ends to achieve stable embedded positioning, and the two ends of the fuse component respectively inserted into fuse fixing grooves provided on the first and second inner electrodes, thereby achieving precise connection between the fuse component and the inner electrode component, and the end electrode components are respectively connected to the two ends of the ceramic substrate and electrically conductive with the inner electrode component for patch welding of external circuits, and a covering protective layer is provided around the fuse component and between the two end electrode components to provide insulation and mechanical protection for the fuse component. The entire structure of the present application achieves precise definition and anti-detachment protection of the fuse component connection point through the cooperation of the fuse fixing grooves, which not only improves the structural stability and electrical connection reliability between the fuse component and the first and second inner electrodes, but also improves the heat resistance, consistency and mass manufacturability of the overall fuse device in high-density installation and miniaturized electronic scenarios; 2. An ultra-micro chip fuse structure, wherein the inner electrode metal layer serves as a direct connection surface with the fuse component, and the two ends of the fuse component are respectively welded or bonded to the corresponding inner electrode metal layer to achieve stable conduction, and the inner electrode metal layer extends outward to the open end of the groove and turns to cover a part of the surface of the ceramic substrate, thereby forming a connecting metal layer. The connecting metal layer is used to connect to the end electrode component, forming a complete electrical path from the fuse component through the inner electrode metal layer and the connecting metal layer to the end electrode component. The structure of the present application realizes a multi-stage reliable conduction connection mode, thereby improving the stability of current transmission and structural strength. By arranging the metal layer in both the inner wall of the groove and the open end, not only the effective welding area of the fuse component is expanded, the bonding consistency and electrical contact area are improved, but also the positioning and welding operation of the pad of the end electrode component are facilitated, thereby enhancing the reliable fusing characteristics of the component under overcurrent conditions and the connection reliability during long-term use while ensuring the compactness of the ultra-micro structure; 3. A production process for an ultra-miniature surface-mount fuse structure. In step S1, two inner electrode grooves are formed at both ends of one side of a ceramic substrate through an etching process. In step S2, the inner sidewalls and peripheral areas of the open ends of the inner electrode grooves are subjected to a metallization wall-hanging molding process to form first and second inner electrodes with conductive properties and strong adhesion. In step S3, the ends of the fuse component are respectively inserted into the fuse fixing slots, and a secure connection between the fuse component and the first and second inner electrodes is achieved through thermosonic wedge bonding or thermocompression bonding. In step S4, a protective layer material is uniformly printed on the peripheral areas of the fuse component to form a covering protective layer, thereby achieving electrical insulation and mechanical protection for the fuse component. In step S5, the ceramic substrate is segmented and terminal electrode metal layers are applied to both ends of the ceramic substrate to form first and second terminal electrodes that are conductively connected to the connecting metal layer. Through precise slot forming, attached metallization, electrode embedding and positioning, bonding processes, and a wraparound protective structure, this method improves the overall process consistency, electrical performance stability, and structural connection reliability of ultra-miniature surface-mount fuses. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 This is a schematic diagram of the exploded structure of an ultra-micro chip fuse structure embodiment of the present application.

[0026] Figure 2 This is a schematic cross-sectional view of an embodiment of an ultra-micro chip fuse structure of the present application.

[0027] Figure 3 This is a schematic flow chart of the steps of an embodiment of a production process for an ultra-micro chip fuse structure of the present application.

[0028] Figure 4 This is a schematic flow chart of the steps of thermosonic wedge bonding in an embodiment of a production process for an ultra-micro chip fuse structure of the present application.

[0029] Figure 5 This is a schematic flow chart of the steps of thermal compression bonding in an embodiment of a production process for an ultra-micro chip fuse structure of the present application.

[0030] Description of reference numerals: 1. Ceramic substrate; 11. Inner electrode groove; 111. First inner electrode groove; 112. Second inner electrode groove; 2. Inner electrode component; 21. First inner electrode; 22. Second inner electrode; 211. Fuse fixing groove; 212. Inner electrode metal layer; 213. Connecting metal layer; 3. End electrode component; 31. First end electrode; 32. Second end electrode; 311. End electrode body; 312. Connecting side edge; 313. Fixed side edge; 4. Fuse component; 5. Covering protective layer. DETAILED DESCRIPTION

[0031] The following is combined with Figures 1 to 5 This application is described in further detail.

[0032] The present application discloses an ultra-micro chip fuse structure and its production process. Figure 1 A micro-chip fuse structure includes a ceramic substrate 1, an inner electrode component 2 inserted into the ceramic substrate 1, end electrode components 3 connected to both ends of the ceramic substrate 1 and used to connect to the inner electrode components 2, a fuse component 4 located between the end electrode components 3 and used to connect the two inner electrode components 2, and a covering protective layer 5 covering the periphery of the fuse component 4 and located between the end electrode components 3; The side walls of the ceramic substrate 1 are provided with inner electrode grooves 11 respectively located at both ends of the ceramic substrate 1. The inner electrode component 2 includes a first inner electrode 21 and a second inner electrode 22 respectively inserted into the two inner electrode grooves 11; the first inner electrode 21 and the second inner electrode 22 are both provided with fuse fixing grooves 211, and the two ends of the fuse component 4 are respectively inserted into the fuse fixing grooves 211 on the first inner electrode 21 and the second inner electrode 22, and the two ends of the fuse component 4 are respectively connected to the first inner electrode 21 and the second inner electrode 22.

[0033] The present application uses the ceramic substrate 1 as the overall supporting structure, and the first inner electrode 21 and the second inner electrode 22 are respectively inserted into the inner electrode grooves 11 provided on the side walls of the ceramic substrate 1 at both ends to achieve stable embedded positioning. The two ends of the fuse component 4 are respectively inserted into the fuse fixing grooves 211 provided on the first inner electrode 21 and the second inner electrode 22, thereby achieving a precise connection between the fuse component 4 and the inner electrode component 2. The end electrode component 3 is respectively connected to the two ends of the ceramic substrate 1 and is conductive with the inner electrode component 2 for patch welding of the external circuit. The covering protective layer 5 is provided on the fuse component. The fuse component 4 is located on the side thereof and between the electrode components 3 at both ends, and is used to provide insulation and mechanical protection for the fuse component 4. The entire structure of the present application achieves precise definition of the connection point of the fuse component 4 and anti-detachment protection through the cooperation of the fuse fixing groove 211. This not only improves the structural stability and electrical connection reliability between the fuse component 4 and the first inner electrode 21 and the second inner electrode 22, but also improves the heat resistance, consistency and mass manufacturability of the overall fuse device in high-density installation and miniaturized electronic scenarios, thereby achieving effective protection of circuit overcurrent protection performance in ultra-small specifications such as 0201. This application is mainly used for the production of "ultra-micro" fuses. The semiconductor processes such as printing technology and etching technology used in traditional ultra-micro fuses are high in cost, complexity and difficult to handle in an environmentally friendly manner. This application simplifies the production process by adopting semiconductor bonding technology, transforming the chemical production process into a physical process, avoiding pollution, and improving production efficiency and environmental friendliness.

[0034] Further, if Figure 2As shown, the first inner electrode 21 and the second inner electrode 22 both include an inner electrode metal layer 212 covering the inner side wall of the inner electrode groove 11, and a connecting metal layer 213 connected to the inner electrode metal layer 212 and covering the periphery of the open end of the inner electrode groove 11; the inner electrode metal layer 212 is connected to the end of the fuse component 4, and the connecting metal layer 213 is connected to the end electrode component 3.

[0035] The structure of the first inner electrode 21 and the second inner electrode 22 of the present application is that the inner electrode metal layer 212 deposited on the inner wall of the inner electrode groove 11 is used as a direct connection surface with the fuse component 4. The two ends of the fuse component 4 are respectively welded or bonded to the corresponding inner electrode metal layer 212 to achieve stable conduction, and the inner electrode metal layer 212 extends outward to the opening end of the groove and turns to cover a part of the surface of the ceramic substrate 1, thereby forming a connecting metal layer 213. The connecting metal layer 213 is used to connect with the end electrode component 3, forming a fuse from the fuse component 4 through the inner electrode metal layer. 212. The complete electrical path connecting the metal layer 213 to the end electrode component 3. The structure of the present application realizes a multi-stage reliable conduction connection mode, improves the stability of current transmission and structural strength, and arranges the metal layer in two areas, namely the inner wall of the groove and the open end. It not only expands the effective welding area of the fuse component 4, improves the bonding consistency and electrical contact area, but also facilitates the positioning and welding operation of the pad of the end electrode component 3. Therefore, under the premise of ensuring the compactness of the ultra-micro structure, it enhances the reliable fusing characteristics of the component in the overcurrent state and the connection reliability during long-term use.

[0036] The inner electrode metal layer 212 is disposed along the periphery of the inner electrode groove 11 to form a fuse fixing groove 211 .

[0037] Furthermore, if Figure 1 As shown, the internal electrode groove 11 includes a first internal electrode groove 111 located at one end of the ceramic substrate 1, and a second internal electrode groove 112 located at the other end of the ceramic substrate 1; the first internal electrode 21 is inserted into the first internal electrode groove 111, and the second internal electrode 22 is inserted into the second internal electrode groove 112.

[0038] The ceramic substrate 1 of the present application is respectively provided with a first internal electrode groove 111 and a second internal electrode groove 112 at both ends, which are used to form a complete internal electrode groove 11 structure, wherein the first internal electrode 21 is inserted into the first internal electrode groove 111, and the second internal electrode 22 is inserted into the second internal electrode groove 112, so as to realize the symmetrical embedded layout of the internal electrode component 2 on the ceramic substrate 1; the first internal electrode 21 is closely attached to the inner groove wall of the first internal electrode groove 111, and the second internal electrode 22 is closely attached to the inner groove wall of the second internal electrode groove 112, so as to provide stable support and provide a reference for the subsequent positioning and connection of the fuse component 4. The embedded structure of the internal electrode component 2 not only improves the structural fixity between the electrode and the substrate, but also helps to control the assembly accuracy, avoid the problem of electrode displacement caused by thermal expansion, mechanical stress or process deviation, thereby enhancing the overall stability and welding consistency of the fuse connection, thereby improving the structural reliability, electrical conductivity and thermal shock resistance of the ultra-miniature surface mount fuse in high-density assembly and long-term working environment.

[0039] Specifically, if Figure 1 As shown, the end electrode component 3 includes a first end electrode 31 connected to the first internal electrode 21 , and a second end electrode 32 connected to the second internal electrode 22 .

[0040] In the present application, the first end electrode 31 is connected to the external extension end of the first inner electrode 21, and the second end electrode 32 is connected to the external extension end of the second inner electrode 22; the first end electrode 31 and the first inner electrode 21, and the second end electrode 32 and the second inner electrode 22 are conductively connected through the connecting metal layer 213, thereby realizing a complete current transmission path from the fuse component 4 to the external pad. The end electrode component 3 is arranged on the outside of both ends of the ceramic substrate 1, and can cover and wrap the end of the ceramic substrate 1 to ensure sufficient contact area during mounting and welding. In actual application, the first end electrode 31 and the second end electrode 32 play the dual functions of stable mechanical connection and electrical lead-out, which not only improves the welding reliability and tensile and shear strength of the device, but also provides a low-impedance path for current conduction. Especially in micro-sizes such as 0201, the double-end separated structure effectively reduces the problems of pad offset and cold soldering caused by high-density packaging, thereby enhancing the reliability and consistency of the surface mount fuse in automatic patch production and subsequent circuit operation.

[0041] More specifically, if Figure 2 As shown, the first end electrode 31 and the second end electrode 32 each include an end electrode body 311 connected to the side surface of the end of the ceramic substrate 1, a connecting side edge 312 connected to one side of the end electrode body 311 and to the inner electrode component 2, and a fixing side edge 313 connected to the other side of the end electrode body 311 and to the side wall of the ceramic substrate 1; The covering protection layer 5 is sleeved around the fuse component 4 , and two ends of the covering protection layer 5 are respectively connected to the connecting side edges 312 on the first end electrode 31 and the second end electrode 32 .

[0042] The terminal electrode body 311 of the present application is attached to the end side of the ceramic substrate 1 and plays the main supporting role. The connecting side edge 312 extends from one side of the terminal electrode body 311 and is conductively connected to the inner electrode component 2 to form a current extraction path, while the fixed side edge 313 extends from the other side of the terminal electrode body 311 and covers the side wall of the ceramic substrate 1 to achieve mechanical fixation and coating protection with the ceramic substrate 1; the terminal electrode body 311 is fixed to both ends of the ceramic substrate 1 by hot pressing or sputtering, and the connecting side edge 312 is conductively connected to the connecting metal layer 213. The fixed side edge 313 is in contact with the outer wall of the substrate, thereby forming a stable wrapped connection structure. At the same time, the covering protective layer 5 is sleeved on the periphery of the fuse component 4, and the two ends of the covering protective layer 5 are respectively connected to the connecting side edges 312 on the first end electrode 31 and the second end electrode 32, which not only provides insulation protection and anti-oxidation for the fuse component 4, but also prevents mechanical stress from directly acting on the fuse contact. The overall structural design effectively improves the mechanical strength, electrical connection stability and packaging sealing of the device through the covering extension and multi-faceted support of the electrode side edges.

[0043] In addition, if Figure 3 As shown, the present application also discloses a production process for an ultra-micro chip fuse structure, including an ultra-micro chip fuse structure, and further comprising the following steps: S1: forming two inner electrode grooves 11 at both ends of one side of the ceramic substrate 1 by etching; S2: performing a metallization wall forming process on the inner side wall of the inner electrode groove 11 and the periphery of the opening end of the inner electrode groove 11 to form the inner electrode component 2; S3: The two ends of the fuse component 4 are respectively inserted into the two fuse fixing grooves 211, and the two ends of the fuse component 4 are respectively connected to the first inner electrode 21 and the second inner electrode 22 by thermosonic wedge bonding or thermocompression bonding; S4: Printing a protective layer material around the fuse component 4 and curing it to form a covering protective layer 5; S5: The ceramic substrate 1 is divided and the terminal electrode parts 3 are metal-processed to form external electrodes that are electrically connected to the internal electrode parts 2.

[0044] In step S1 of the present application, two inner electrode grooves 11 are formed at both ends of one side of the ceramic substrate 1 by an etching process to define the structural position of the inner electrode component 2. Subsequently, in step S2, the inner sidewalls and the peripheral area of the open end of the inner electrode groove 11 are subjected to a metallization wall forming process to form a first inner electrode 21 and a second inner electrode 22 with conductive properties and adhesion, thereby forming a complete inner electrode component 2. In step S3, the two ends of the fuse component 4 are respectively inserted into the fuse fixing groove 211, and a firm connection between the fuse component 4 and the first inner electrode 21 and the second inner electrode 22 is achieved by thermosonic wedge bonding or thermocompression bonding, thereby ensuring low impedance, high consistency and reliability of the fuse connection. In step S4, a protective layer material is uniformly printed around the periphery of the fuse component 4 and thermally cured to form a covering protective layer 5, thereby achieving electrical insulation and mechanical protection for the fuse component 4. In step S5, the ceramic substrate 1 is segmented and a terminal electrode metal layer is applied to both ends of the ceramic substrate 1 to form a first terminal electrode 31 and a second terminal electrode 32 that are conductive to the connecting metal layer 213, forming the terminal electrode component 3 and completing the connection to the pad of the external circuit. The present method improves the process consistency, electrical performance stability, structural reliability and adaptability to mass production of ultra-miniature surface mount fuses through precise slot forming, attached metallization, electrode embedding and positioning, bonding process and surround protection structure. This application is mainly used for the production and manufacturing of "ultra-micro" fuses. The semiconductor processes such as printing technology and etching technology used in traditional ultra-micro fuses are high in cost, complexity and difficult to handle in an environmentally friendly manner. This application simplifies the production process by adopting semiconductor bonding technology, transforming the chemical production process into a physical process, avoiding pollution, and improving production efficiency and environmental friendliness. At the same time, the method of this application improves product consistency and effectively ensures the connection stability of the fuse.

[0045] The present application preferably uses epoxy resin or glass to print a protective layer around the fuse component 4 and then dries it to form a covering protective layer 5; Epoxy resin weight ratio: Bisphenol A epoxy resin: 100 parts Curing agent: 40-50 parts Active diluent: 3%-8% (based on the weight of epoxy resin) Weigh the above materials according to parts by weight and mix them evenly.

[0046] Glass paste weight ratio: Silicon dioxide (SiO2) content: 50%-65% Alumina (Al2O3) content: 10%-20% Boron oxide (B2O3) content: 10%-15% Flux content: 5%-10% The components are precisely proportioned, fully mixed, and melted to form glass paste.

[0047] In step S5, the ceramic substrate 1 of the product is divided, and a copper layer or a silver layer is formed on the ceramic substrate 1 by silver immersion or sputtering, and then nickel or tin is electroplated or sputtered to form the terminal electrode parts 3.

[0048] Furthermore, the etching process in step S1 is photolithography and inductively coupled plasma etching technology.

[0049] The present application uses photolithography and inductively coupled plasma etching (ICP) technology to perform high-precision forming operations on the internal electrode groove 11 of the ceramic substrate 1. The specific process includes first coating photoresist on both ends of one side of the ceramic substrate 1 through photolithography technology and exposing and developing it to form an etching pattern template, and then using ICP etching technology to perform anisotropic dry etching on the ceramic substrate 1 along the template pattern, thereby accurately forming the first internal electrode groove 111 and the second internal electrode groove 112, which have structural characteristics of controllable depth, neat edges, and high verticality. Compared with traditional wet etching, the process of the present application can improve the control accuracy and consistency of the groove size, avoid processing defects caused by hard and brittle ceramic materials or uneven pitting, thereby providing a stable three-dimensional structural foundation for the subsequent wall metallization and embedding of the internal electrode component 2, further improving the positioning accuracy and connection reliability of the internal electrode component 2 and the fuse component 4, and effectively enhancing the electrical performance of the whole machine, the heat resistance of the device and the adaptability to mass production.

[0050] The distance between the inner electrode groove 11 and the end edge of the ceramic substrate 1 is preferably 5μ to 10μm, the shape of the inner electrode groove 11 is preferably rectangular, trapezoidal or elliptical, and the width of the inner electrode groove 11 is 1 / 4 of the width of the ceramic substrate 1. to The depth of the inner electrode groove 11 is to

[0051] Furthermore, the metallization wall forming process in step S2 is an atomic layer deposition or physical vapor deposition process.

[0052] The metallization wall forming process of the present application adopts atomic layer deposition (ALD) or physical vapor deposition (PVD) process to uniformly deposit metal on the inner side wall and the peripheral area of the opening end of the inner electrode groove 11; in the specific process, the ALD process controls the deposition of metal atoms layer by layer on the groove wall through atomic-level reaction, thereby realizing an inner electrode metal layer 212 and a connecting metal layer 213 with controllable thickness and strong coverage, while the PVD process deposits high-purity metal materials (such as copper, silver or their alloys) on the inner surface of the three-dimensional groove structure by magnetron sputtering or evaporation. In this process, the metal The metal layer is firmly attached to the inner walls and open end edges of the first inner electrode groove 111 and the second inner electrode groove 112 formed by the ceramic substrate 1, ensuring that the metal layer forms a continuous conduction path in the complex structure, thereby constructing the first inner electrode 21 and the second inner electrode 22 with high consistency, high adhesion and low contact resistance. The process steps of this application not only improve the electrical conductivity and thermal stability of the inner electrode component 2, but also provide a stable metal interface for the subsequent precise connection of the fuse component 4, effectively ensuring the reliable melting behavior of the ultra-micro surface mount fuse and the long-term working performance under high-density packaging.

[0053] The thickness of the internal electrode metal layer 212 and the connection metal layer 213 is preferably 0.5 μm to 3 μm.

[0054] Furthermore, if Figure 4 As shown, the thermosonic wedge bonding in step S3 includes the following steps: S301: positioning the bonding position of the fuse component 4 and the inner electrode component 2 by an optical positioning system, and guiding the placement of the fuse component 4; S302: adjusting the ultrasonic power to a preset value according to the size of the ceramic substrate 1 and the material properties of the metal wire of the fuse component 4; S303: monitoring and adjusting the pressure in real time through a pneumatic feedback pressure control system so that the bonding pressure is evenly distributed in the contact area between the fuse component 4 and the inner electrode component 2; S304: Adjust the bonding duration to a preset bonding time.

[0055] In S301 of the present application, a high-precision optical positioning system is used to accurately identify and locate the bonding position of the fuse component 4 and the inner electrode component 2, and the two ends of the fuse component 4 are accurately aligned and placed in the fuse fixing grooves 211 corresponding to the first inner electrode 21 and the second inner electrode 22 to ensure the consistency of subsequent bonding alignment. In S302, the ultrasonic power is adjusted to a preset range according to the specific size specifications of the ceramic substrate 1 and the material properties of the metal wire used in the fuse component 4, so as to achieve energy control that satisfies both bonding strength and avoids overheating damage. In S303, the contact pressure during the bonding process is monitored and dynamically adjusted in real time through a pneumatic feedback pressure control system, so that the contact pressure applied to the fuse component 4 and the inner electrode component is kept constant. The pressure between the components 2 is evenly distributed over the entire contact area, effectively preventing local indentations, cold solder joints or unstable connections. In S304, the duration of thermosonic bonding is shortened to within the parameter range to ensure that metallurgical bonding is completed within a limited time, reducing the impact on the thermal sensitivity of the fuse. The steps of this application achieve coordinated regulation of the connection interface between the fuse component 4 and the first and second inner electrodes 21 and 22 in four dimensions of position, energy, pressure and time through multi-dimensional control. This not only greatly improves the electrical reliability and structural stability of the fuse connection, but also improves process consistency and product yield, providing key technical guarantees for the mass production of ultra-micro fuses such as 0201 in high-integration, high-reliability electronic scenarios.

[0056] Specifically, if Figure 5 As shown, the thermal compression bonding in step S3 includes the following steps: S311: The heating structure and temperature control system of the thermocompression bonding equipment adjust the bonding temperature to a range of 150°C to 250°C and set the temperature uniformity within ±2°C; S312: adjusting the heating temperature and the applied pressure according to the metal properties of the fuse component 4 and the inner electrode component 2 to form an intermetallic compound layer at the contact interface between the fuse component 4 and the inner electrode component 2; S313: According to the combination type of the fuse material of the fuse part 4 and the material of the inner electrode part 2, the temperature, pressure and time parameters are adjusted to perform the connection.

[0057] In the thermocompression bonding process of the present application, in S311, the thermocompression bonding equipment adjusts the bonding temperature to a set range of 150°C to 250°C through its built-in heating structure and high-precision temperature control system, and ensures that the temperature uniformity of the bonding area is controlled within ±2°C to prevent local overheating or cold soldering problems caused by temperature differences. In S312, the heating temperature and applied pressure are precisely adjusted according to the metal material properties of the fuse component 4 and the inner electrode component 2, so that a stable intermetallic compound layer is formed on the contact interface between the fuse component 4 and the first inner electrode 21 and the second inner electrode 22, thereby reducing the contact resistance and improving the connection strength and thermal stability. In S3 In 13, according to the matching relationship between the fuse material (such as nickel-chromium alloy, copper-aluminum alloy, pure gold wire or pure palladium wire) used in the fuse component 4 and the metallized material (such as high-purity copper, silver or silver alloy) of the inner electrode component 2, the bonding temperature, pressure and duration parameters are dynamically adjusted to achieve reliable connection under different material combinations. The hot pressing bonding step of this application effectively improves the metallurgical bonding quality, fatigue resistance and conduction consistency of the fuse connection area through refined control in the temperature, pressure and material adaptation dimensions, ensuring that the ultra-micro surface mount fuse has excellent electrical stability and manufacturing process compatibility during long-term operation in high-density circuits.

[0058] This application uses bonding technology, and the rated current of the 0201 specification product is preferably 0.1A to 1A, and the rated voltage is preferably 32V.

[0059] The implementation principle of an ultra-micro chip fuse structure and its production process in the embodiment of the present application is as follows: An ultra-micro chip fuse structure, with a ceramic substrate 1 as the overall support structure, the first inner electrode 21 and the second inner electrode 22 are respectively inserted into the inner electrode grooves 11 provided on the side walls of the ceramic substrate 1 at both ends to achieve stable embedding positioning, the two ends of the fuse component 4 are respectively inserted into the fuse fixing grooves 211 provided on the first inner electrode 21 and the second inner electrode 22, thereby achieving a precise connection between the fuse component 4 and the inner electrode component 2, the end electrode component 3 is respectively connected to the two ends of the ceramic substrate 1 and is conductive with the inner electrode component 2, for patch welding of the external circuit, and a protective layer 5 is provided. Located around the fuse component 4 and between the electrode components 3 at both ends, the fuse component 4 is used to provide insulation and mechanical protection. The entire structure of the present application uses the fuse fixing slot 211 to precisely define the connection point of the fuse component 4 and prevent it from falling out. This not only improves the structural stability and electrical connection reliability between the fuse component 4 and the first and second inner electrodes 21 and 22, but also enhances the heat resistance, consistency, and mass manufacturability of the overall fuse device in high-density installation and miniaturized electronic scenarios, thereby effectively ensuring the overcurrent protection performance of the circuit in ultra-small specifications such as 0201. The structure of the first inner electrode 21 and the second inner electrode 22 is that the inner electrode metal layer 212 deposited on the inner wall of the inner electrode groove 11 is used as a direct connection surface with the fuse component 4. The two ends of the fuse component 4 are respectively welded or bonded to the corresponding inner electrode metal layer 212 to achieve stable conduction. The inner electrode metal layer 212 extends outward to the opening end of the groove and turns to cover a part of the surface of the ceramic substrate 1, thereby forming a connecting metal layer 213. The connecting metal layer 213 is used to connect with the end electrode component 3, forming a fuse from the fuse component 4 through the inner electrode metal layer 21 2. The complete electrical path connecting the metal layer 213 to the terminal electrode component 3. The structure of the present application realizes a multi-stage reliable conduction connection mode, improving the stability of current transmission and structural strength. By arranging the metal layer in the dual areas of the inner wall of the groove and the open end, not only the effective welding area of the fuse component 4 is expanded, the bonding consistency and electrical contact area are improved, but also the positioning and welding operation of the pad of the terminal electrode component 3 are facilitated. Thus, while ensuring the compactness of the ultra-micro structure, the reliable fusing characteristics of the component in the overcurrent state and the connection reliability during long-term use are enhanced; A production process for an ultra-micro chip fuse structure. In step S1, two inner electrode grooves 11 are formed at both ends of one side of a ceramic substrate 1 through an etching process to define the structural position of an inner electrode component 2. Subsequently, in step S2, a metallization wall forming process is performed on the inner sidewalls and the peripheral area of the open end of the inner electrode groove 11 to form a first inner electrode 21 and a second inner electrode 22 with conductive properties and adhesion, forming a complete inner electrode component 2. In step S3, the two ends of the fuse component 4 are respectively inserted into the fuse fixing groove 211, and a firm connection between the fuse component 4 and the first inner electrode 21 and the second inner electrode 22 is achieved through thermosonic wedge bonding or thermocompression bonding, ensuring low impedance and high consistency of the fuse connection. and reliability; in step S4, a protective layer material is evenly printed on the peripheral area of the fuse component 4 and heat-cured to form a covering protective layer 5, thereby achieving electrical insulation and mechanical protection for the fuse component 4; in step S5, the ceramic substrate 1 is divided and an end electrode metal layer is applied at both ends of the ceramic substrate 1 to form a first end electrode 31 and a second end electrode 32 that are conductive with the connecting metal layer 213, forming an end electrode component 3 and completing the connection with the pad of the external circuit. The method of the present application improves the process consistency, electrical performance stability, structural reliability and adaptability to mass production of ultra-micro surface mount fuses through precise slot forming, attached metallization, electrode embedding positioning, bonding process and surround-type protection structure.

[0060] The above are all preferred embodiments of the present application, and are not intended to limit the scope of protection of the present application. Therefore, any equivalent changes made based on the structure, shape, and principle of the present application should be included in the scope of protection of the present application.

Claims

1. An ultra-micro chip fuse structure, characterized in that: The invention comprises a ceramic substrate (1), an inner electrode component (2) inserted into the ceramic substrate (1), an end electrode component (3) connected to both ends of the ceramic substrate (1) and used to be connected to the inner electrode component (2), a fuse component (4) located between the two end electrode components (3) and used to connect the two inner electrode components (2), and a covering protective layer (5) covering the periphery of the fuse component (4) and located between the two end electrode components (3); The side wall of the ceramic substrate (1) is provided with inner electrode grooves (11) respectively located at two ends of the ceramic substrate (1); the inner electrode component (2) comprises a first inner electrode (21) and a second inner electrode (22) respectively inserted into the two inner electrode grooves (11); the first inner electrode (21) and the second inner electrode (22) are both provided with fuse fixing grooves (211); the two ends of the fuse component (4) are respectively inserted into the fuse fixing grooves (211) on the first inner electrode (21) and the second inner electrode (22); and the two ends of the fuse component (4) are respectively connected to the first inner electrode (21) and the second inner electrode (22).

2. The ultra-micro chip fuse structure according to claim 1, characterized in that: The first internal electrode (21) and the second internal electrode (22) both comprise an internal electrode metal layer (212) covering the inner side wall of the internal electrode groove (11), and a connecting metal layer (213) connected to the internal electrode metal layer (212) and covering the periphery of the open end of the internal electrode groove (11); the internal electrode metal layer (212) is connected to the end of the fuse component (4), and the connecting metal layer (213) is connected to the end electrode component (3).

3. The ultra-micro chip fuse structure according to claim 1, characterized in that: The inner electrode groove (11) comprises a first inner electrode groove (111) located at one end of the ceramic substrate (1), and a second inner electrode groove (112) located at the other end of the ceramic substrate (1); the first inner electrode (21) is inserted into the first inner electrode groove (111), and the second inner electrode (22) is inserted into the second inner electrode groove (112).

4. The ultra-micro chip fuse structure according to claim 1, characterized in that: The end electrode component (3) comprises a first end electrode (31) connected to the first internal electrode (21), and a second end electrode (32) connected to the second internal electrode (22).

5. The ultra-micro chip fuse structure according to claim 4, characterized in that: The first end electrode (31) and the second end electrode (32) each comprise an end electrode body (311) connected to the side surface of the end of the ceramic substrate (1), a connecting side edge (312) connected to one side of the end electrode body (311) and connected to the inner electrode component (2), and a fixing side edge (313) connected to the other side of the end electrode body (311) and connected to the side wall of the ceramic substrate (1); The covering protective layer (5) is sleeved around the fuse component (4), and the two ends of the covering protective layer (5) are respectively connected to the connecting side edges (312) on the first end electrode (31) and the second end electrode (32).

6. A process for producing an ultra-micro chip fuse structure, comprising the ultra-micro chip fuse structure according to any one of claims 1 to 5, characterized in that: The following steps are also included: S1: forming two inner electrode grooves (11) at both ends of one side of the ceramic substrate (1) by etching; S2: performing a metallization wall forming process on the inner side wall of the inner electrode groove (11) and the periphery of the opening end of the inner electrode groove (11) to form the inner electrode component (2); S3: inserting the two ends of the fuse component (4) into the two fuse fixing grooves (211) respectively, and connecting the two ends of the fuse component (4) to the first inner electrode (21) and the second inner electrode (22) respectively by thermosonic wedge bonding or thermocompression bonding; S4: Printing a protective layer material around the fuse component (4) and curing the material to form the covering protective layer (5); S5: dividing the ceramic substrate (1) and performing metal processing on the end electrode component (3) to form an outer electrode that is conductively connected to the inner electrode component (2).

7. The process for producing an ultra-micro chip fuse structure according to claim 6, characterized in that: The etching process in step S1 is photolithography and inductively coupled plasma etching technology.

8. The process for producing an ultra-micro chip fuse structure according to claim 6, wherein: The metallization wall forming process in step S2 is an atomic layer deposition or physical vapor deposition process.

9. The process for producing an ultra-micro chip fuse structure according to claim 6, wherein: The thermosonic wedge bonding in step S3 includes the following steps: S301: positioning the bonding position of the fuse component (4) and the inner electrode component (2) by an optical positioning system, and guiding the placement of the fuse component (4); S302: adjusting the ultrasonic power to a preset value according to the size of the ceramic substrate (1) and the material properties of the metal wire of the fuse component (4); S303: monitoring and adjusting the pressure in real time through a pneumatic feedback pressure control system, so that the bonding pressure is evenly distributed in the contact area between the fuse component (4) and the inner electrode component (2); S304: Adjust the bonding duration to a preset bonding time.

10. The process for producing an ultra-micro chip fuse structure according to claim 6, characterized in that: The thermal compression bonding in step S3 includes the following steps: S311: The heating structure and temperature control system of the thermocompression bonding equipment adjust the bonding temperature to a range of 150°C to 250°C and set the temperature uniformity within ±2°C; S312: adjusting the heating temperature and applying the pressure according to the metal properties of the fuse component (4) and the inner electrode component (2), so as to form an intermetallic compound layer at the contact interface between the fuse component (4) and the inner electrode component (2); S313: According to the combination type of the fuse material of the fuse component (4) and the material of the inner electrode component (2), adjust the temperature, pressure and time parameters to perform the connection.

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