Reconfigurable spin probability bit device and control method thereof

Abstract

The invention provides a reconfigurable spin probability bit device and a control method thereof, and relates to the technical field of spin probability bits. The control method of the reconfigurable spin probability bit device comprises the following steps: determining a symmetry axis of a spin conversion layer of the reconfigurable spin probability bit device; determining an included angle between the direction of the first pulse and the symmetry axis according to the direction of the first pulse injected into the spin conversion layer; the magnetization state of the magnetic free layer is switched between a first magnetization state and a second magnetization state by regulating and controlling the size of the first pulse and the size of the included angle, and the probability of switching to any magnetization state between the first magnetization state and the second magnetization state is regulated and controlled; wherein the magnetization directions of the first magnetization state and the second magnetization state are opposite.

Description

Technical Field

[0001] The present disclosure relates to the technical field of spin probability bits, and more particularly, to a reconfigurable spin probability bit device and a control method thereof. Background Art

[0002] New computing paradigms, such as probabilistic computing based on statistical mechanics, have shown great potential in artificial intelligence (AI) to transcend traditional Boolean logic. Recent advances in spintronics devices have provided an efficient hardware foundation for implementing these probabilistic computing methods. While low-barrier probabilistic bit devices (with a thermal stability coefficient of Δ<60) based on spin transfer torque (STT) can achieve stochastic computing, their unstable magnetic state at room temperature severely restricts their uniform integration and circuit scalability.

[0003] In contrast, spin-orbit torque (SOT) magnetic devices with perpendicular magnetic anisotropy structures exhibit superior overall performance: their high barrier energy (Δ≥60) endows the devices with excellent thermal stability, combined with non-volatile storage properties and compatibility with standard CMOS processes, providing an ideal platform for building high-density, highly uniform probabilistic computing arrays. However, current SOT probabilistic bit devices still face key bottlenecks, such as the lack of a fully electrically controlled operating mode switching mechanism, which prevents the devices from flexibly switching between probabilistic random write and deterministic directional write states. This can lead to problems such as low switching efficiency, insufficient write accuracy, low hardware resource reuse, and excessive energy consumption when executing generative AI algorithms (such as deep generative models, adversarial networks, and variational word encoders). This situation urgently requires further technological breakthroughs and innovations to promote the practical application of related devices in high-performance AI systems. Summary of the Invention

[0004] In view of this, the present disclosure provides a reconfigurable spin probability bit device and a control method thereof, which at least partially solve the above technical problems.

[0005] On the one hand, the present disclosure provides a control method for a reconfigurable spin probability bit device, including: determining the symmetry axis of a spin polarization layer of the reconfigurable spin probability bit device, where the symmetry axis is the spin polarization control direction caused by lattice symmetry breaking in the spin polarization layer; determining the angle between the direction of a first pulse injected into the spin polarization layer and the symmetry axis based on the direction of the first pulse; switching the magnetization state of a magnetic free layer between a first magnetization state and a second magnetization state by regulating the magnitude of the first pulse and the magnitude of the angle, and regulating the probability of switching to any one of the first magnetization state and the second magnetization state; wherein the magnetization directions of the first magnetization state and the second magnetization state are opposite.

[0006] According to an embodiment of the present disclosure, when the direction of the first pulse is parallel to the axis of symmetry, the magnetization state of the magnetic free layer is switched between the first magnetization state and the second magnetization state; when the direction of the first pulse intersects the axis of symmetry, the probability of the magnetization state of the magnetic free layer being any one of the first magnetization state and the second magnetization state is regulated.

[0007] According to an embodiment of the present disclosure, the magnetization state of the magnetic free layer is switched between a first magnetization state and a second magnetization state by regulating the magnitude and angle of a first pulse, and the probability of switching to any one of the first magnetization state and the second magnetization state is regulated. The method includes: injecting a first pulse into the spin polarization layer, converting the first pulse into spin polarization; controlling the state, magnitude, and direction of the spin polarization by regulating the magnitude and direction of the first pulse; and switching the magnetization state of the magnetic free layer according to the state, magnitude, and direction of the spin polarization.

[0008] According to an embodiment of the present disclosure, when the direction of the first pulse is parallel to the symmetry axis, the state of spin polarization includes in-plane spin polarization and out-of-plane spin polarization; when the direction of the first pulse is perpendicular to the symmetry axis (the N-fold lower symmetry axis is π / 2N), the state of spin polarization includes in-plane spin polarization.

[0009] According to an embodiment of the present disclosure, a second pulse is injected into a first direction of the spin-transmitted layer, and a third pulse is injected into a second direction of the spin-transmitted layer; wherein the first direction and the second direction intersect; and the first pulse is obtained by vector calculation based on the second pulse and the third pulse.

[0010] According to an embodiment of the present disclosure, the size and direction of the first pulse are controlled by regulating the size and direction of the first pulse and the size and direction of the second pulse.

[0011] According to an embodiment of the present disclosure, it also includes: injecting a fourth pulse into the reconfigurable spin probability bit device, and reading the magnetoresistance of the reconfigurable spin probability bit device by measuring the magnetoresistance state of the tunnel junction; wherein the magnetoresistance state includes: a first resistance state, used to characterize that the magnetization states of the magnetic free layer and the magnetic reference layer are arranged in parallel; and a second resistance state, used to characterize that the magnetization states of the magnetic free layer and the magnetic reference layer are arranged in antiparallel.

[0012] According to a second aspect of the present disclosure, a reconfigurable spin probability bit device is provided, comprising: a spin polarization layer, configured to convert an injected first pulse into out-of-plane spin polarization and / or in-plane spin polarization based on the symmetry axis of the spin polarization layer; and a magnetic free layer, arranged on the surface of the spin polarization layer and configured to have perpendicular magnetic anisotropy; wherein the magnitude and direction of the spin polarization are controlled by regulating the magnitude of the first pulse and the angle between the direction of the first pulse and the symmetry axis, so that the magnetization state of the magnetic free layer is switched between a first magnetization state and a second magnetization state, and the probability of switching to any one of the magnetization states between the first magnetization state and the second magnetization state is regulated.

[0013] According to an embodiment of the present disclosure, it also includes: a spin or orbital Hall layer, which is arranged on the first surface or the second surface of the spin-polarization layer, and is used to convert the injected pulse into an orbital flow, and the orbital flow is converted into a spin flow through the atoms in the spin-polarization layer and / or the atoms in the magnetic free layer; wherein the first surface is opposite to the second surface, and a magnetic free layer is arranged on the first surface.

[0014] According to an embodiment of the present disclosure, the invention further includes: a magnetic reference layer, which is arranged on a surface of the magnetic free layer away from the spin polarization layer and is used to provide a reference benchmark for switching the magnetization state.

[0015] The control method of the reconfigurable spin probability bit device provided by the embodiments of the present disclosure has at least the following beneficial effects:

[0016] This method determines the angle between the first pulse direction and the symmetry axis based on the direction of the first pulse injected into the spin-polarized layer. By adjusting the magnitude and angle of the first pulse current, the magnetization state of the magnetic free layer is switched between the first and second magnetization states, and the probability of switching to either magnetization state is controlled. This method achieves precise control of the magnetization state of the magnetic free layer, enabling a single device to flexibly switch between probabilistic random write and deterministic directional write modes, significantly improving the flexibility and adaptability of the hardware.

[0017] At the same time, in the deterministic directional write mode, by making the first pulse parallel to the low symmetry axis, it is possible to ensure that the magnetic free layer switches to the target state with a deterministic probability, with high writing accuracy, avoiding write errors or unstable state problems. And in the probabilistic random write mode, by adjusting the angle between the external current and the low symmetry axis, the probability of the magnetic free layer switching to different states can be precisely controlled, which is suitable for the randomness requirements in generative AI algorithms. This method uses a fully electrically controlled switching mechanism to enable the device to quickly switch between different write modes, avoiding additional hardware resource consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0019] Figure 1 A schematic diagram schematically illustrates a control method for a reconfigurable spin probability bit device according to an embodiment of the present disclosure;

[0020] Figure 2 A schematic diagram schematically illustrates the relationship between the probability of the first magnetization state and the angle according to an embodiment of the present disclosure;

[0021] Figure 3 A schematic diagram schematically shows the relationship between the out-of-plane spin polarization intensity and the angle according to an embodiment of the present disclosure;

[0022] Figure 4 Schematically shows a schematic diagram of a patterned electrode injection pulse according to an embodiment of the present disclosure;

[0023] Figure 5 Schematically shows a flow diagram of a fourth pulse according to an embodiment of the present disclosure;

[0024] Figure 6 The structure of a reconfigurable spin probability bit device according to an embodiment of the present disclosure is schematically shown;

[0025] Figure 7 The flow diagram of the first pulse according to an embodiment of the present disclosure is schematically shown. DETAILED DESCRIPTION

[0026] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present disclosure. In the detailed description below, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may be implemented without these specific details. In addition, in the following description, descriptions of well-known systems and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0027] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise," "include," etc. used herein indicate the presence of features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0028] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0029] When expressions such as "at least one of A, B, and C, etc." are used, they should generally be interpreted in accordance with the meaning commonly understood by those skilled in the art (for example, "a system having at least one of A, B, and C" should include but is not limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc.).

[0030] Figure 1 The following is a schematic diagram of a control method for a reconfigurable spin probability bit device according to an embodiment of the present disclosure.

[0031] like Figure 1 As shown, the method includes operations S110 to S130.

[0032] In operation S110 , a symmetry axis of a spin polarization layer of the reconfigurable spin probability bit device is determined, where the symmetry axis is a spin polarization control direction caused by lattice symmetry breaking in the spin polarization layer.

[0033] In operation S120 , an angle between the direction of the first pulse injected into the spin-transmitted layer and the symmetry axis is determined according to the direction of the first pulse.

[0034] In operation S130 , the magnitude and angle of the first pulse are adjusted to switch the magnetization state of the magnetic free layer between the first magnetization state and the second magnetization state, and the probability of switching to any one of the first magnetization state and the second magnetization state is adjusted.

[0035] The magnetization directions of the first magnetization state and the second magnetization state are opposite.

[0036] In the embodiments disclosed herein, the low symmetry axis of the spin polarization layer is determined by analyzing the symmetry violations of the material lattice, providing a benchmark for subsequent current control. The low symmetry axis is one or more specific linear directions in the spin polarization layer, with mirror symmetry violations on both sides of the lattice, and is used to dominate the specific crystalline phase of spin polarization control. For example, the lattice and band structure of the spin polarization layer material are calculated based on density functional theory to determine the anisotropy direction of spin polarization. The lattice structure and lattice symmetry can also be characterized by combining high-resolution X-ray diffraction, scanning transmission electron microscopy, and other methods. Alternatively, electrical testing methods such as spin-torque ferromagnetic resonance (ST-FMR) and harmonic testing can be used to characterize the relationship between the out-of-plane spin polarization intensity generated by the material and the direction of the applied current. The direction with the highest out-of-plane spin polarization intensity is the direction of the low symmetry axis.

[0037] By varying the direction of the first pulse, the angle between the first pulse and the low-symmetry axis is precisely controlled, thereby precisely controlling the flipping state of the magnetic free layer and flexibly switching between write modes. By adjusting the magnitude and angle of the first pulse, this method enables a single device to flexibly switch between probabilistic random write and deterministic directional write. This meets the dual requirements of randomness and determinism for generative AI algorithms. This approach addresses the issues of low switching efficiency, insufficient writing accuracy, low hardware resource reuse, and excessive energy consumption that plague generative AI algorithms (such as deep generative models, adversarial networks, and variational word encoders) that are often unable to implement multifunctional and reconfigurable spin probabilistic bits. In the deterministic directional write mode, the magnetic free layer switches to the target state with a deterministic probability, ensuring the reliability of the write operation. In the probabilistic random write mode, the probability of the magnetic free layer switching to different states can be precisely controlled by adjusting the magnitude and direction of the first pulse, making it suitable for random sampling tasks (such as Markov chain Monte Carlo and generative diffusion models). Furthermore, the fully electrically controlled switching mechanism enables rapid switching between different write modes, avoiding additional hardware resource consumption and reducing overall energy consumption.

[0038] Figure 2 The figure schematically shows the relationship between the probability of the first magnetization state and the angle according to an embodiment of the present disclosure.

[0039] When the direction of the first pulse is parallel to the symmetry axis, the magnetization state of the magnetic free layer is switched between the first magnetization state and the second magnetization state.

[0040] When the direction of the first pulse intersects the low symmetry axis, the probability of the magnetization state of the magnetic free layer being any one of the first magnetization state and the second magnetization state is regulated.

[0041] In the embodiments of the present disclosure, Figure 2 As shown in the figure, under a constant total current intensity, assuming the spin-polarized layer has a single low-order symmetry axis parallel to the X-axis, when the first pulse direction is parallel to the low-order symmetry axis, the angle θ between the first pulse and the low-order symmetry axis is 0 or π (assuming the spin-polarized layer has N low-order symmetry axes, the angle θ between the first pulse and the low-order symmetry axis is kπ / N, where k = 0, 1, 2…, N). At this point, the out-of-plane spin polarization generated by the spin-polarized layer is maximum, and the device is in a deterministic directional write mode. The magnetization state of the magnetic free layer is deterministically switched to the target magnetization state, namely the first magnetization state or the second magnetization state.

[0042] When the direction of the first pulse intersects the low-order symmetry axis, the angle is not 0 or π (not kπ / N in the case of an N-fold low-order symmetry axis, where k = 0, 1, 2…, N). This reduces the out-of-plane spin polarization. When the out-of-plane spin polarization is low, the flipping behavior of the magnetic free layer exhibits a certain degree of randomness, and the probability of switching to the first or second magnetization state can be controlled by adjusting θ.

[0043] According to an embodiment of the present disclosure, when the first pulse is parallel to the low symmetry axis, the device is in a deterministic directional write mode, which has high write accuracy and reliability and is suitable for deterministic reasoning tasks. When the first pulse intersects the low symmetry axis, the device is in a probabilistic random write mode, which has adjustable write probability and flexibility and is suitable for random sampling tasks. The combination of these two situations enables the device to simultaneously meet the dual requirements of generative AI algorithms for random sampling and deterministic reasoning, and has beneficial effects such as multifunctional reconfigurability, high write accuracy, controllability of probabilistic write, low energy consumption and high efficiency.

[0044] Figure 3 A schematic diagram schematically shows the relationship between the out-of-plane spin polarization intensity and the angle according to an embodiment of the present disclosure.

[0045] like Figure 3 As shown, this embodiment switches the magnetization state of the magnetic free layer between the first magnetization state and the second magnetization state by regulating the magnitude and included angle of the first pulse, and regulating the probability of switching to any one of the first magnetization state and the second magnetization state, including:

[0046] injecting a first pulse into the spin polarization layer, the first pulse being converted into spin polarization;

[0047] Controlling the state, magnitude, and direction of spin polarization by regulating the magnitude and direction of the first pulse;

[0048] The magnetization state of the magnetic free layer is switched according to the state, magnitude, and direction of the spin polarization.

[0049] In an embodiment of the present disclosure, based on the low symmetry axis of the spin-polarized layer, an external current pulse is passed through the spin-orbit coupling effect of the spin-polarized layer to convert the charge current into a spin-polarized current. The intensity of the spin polarization is controlled by adjusting the size of the first pulse. And the direction of the first pulse is regulated to control the angle θ, thereby controlling the direction and state of the spin polarization. The following takes a spin-polarized layer material with a single low symmetry axis as an example. In the case of an N-fold low symmetry axis material, the following angles need to be multiplied by 1 / N. For example, when θ=0, or θ=π, the out-of-plane spin polarization intensity is the largest. At this time, the magnetization state of the magnetic free layer can be controlled to deterministically flip to the target magnetization state. When θ=π / 2, the in-plane spin polarization intensity is the largest. At this time, the out-of-plane spin polarization intensity is zero. When , based on the value of θ, probabilistic flipping can be achieved.

[0050] For example, Figure 3 As shown, the total current intensity I add Under certain circumstances, it is assumed that the low symmetry axis is parallel to the X-axis. When the first pulse flows through the spin polarization layer, the normalized out-of-plane spin polarization intensity generated is The relationship with the angle θ. Among them, θ = 0, which means that the first pulse direction is parallel to the low symmetry axis, and the out-of-plane spin polarization in the first direction with the largest intensity is generated ( ).when When it increases, due to I add The component in the x direction decreases, resulting in When θ=π / 2, that is, I add When the angle with the lower symmetry axis is π, Decreases to 0. As Further increase, I add The component in the x direction is opposite to the previous direction, and the generated is the second direction, and when Reach the maximum ( ). Similarly, in interval, and The relationship changes are shown in the figure.

[0051] Furthermore, in the case where the direction of the first pulse is parallel to the low symmetry axis, the spin polarization state includes in-plane spin polarization and out-of-plane spin polarization.

[0052] In the case where the direction of the first pulse is perpendicular to the low symmetry axis (the N-fold low symmetry axis is π / 2N), the state of spin polarization includes in-plane spin polarization.

[0053] In the disclosed embodiments, when the direction of the first pulse is parallel to the low symmetry axis, the out-of-plane spin polarization is at its maximum. The in-plane spin polarization at this point can increase the magnetization state reversal rate of the magnetic free layer, enabling the magnetic moment orientation reversal of the magnetic free layer to reach sub-nanosecond levels. However, if the in-plane polarization is zero and only out-of-plane spin polarization exists, the magnetic moment orientation reversal rate can only reach approximately 10 nanoseconds at most, a relatively slow reversal rate.

[0054] When the direction of the first pulse is nonparallel to the low-order symmetry axis, the out-of-plane spin polarization is low. Under the influence of the in-plane spin polarization, the magnetic moment of the magnetic free layer flips randomly with a certain probability. When the direction of the first pulse is perpendicular to the low-order symmetry axis (the N-fold low-order symmetry axis is π / N), the out-of-plane spin polarization is zero, and the random flipping of the magnetization state is achieved through the influence of the in-plane spin polarization.

[0055] Figure 4 A schematic diagram of a patterned electrode injection pulse according to an embodiment of the present disclosure is shown schematically.

[0056] like Figure 4 As shown, according to an embodiment of the present disclosure, the first pulse 430 includes:

[0057] A second pulse 410 is injected into the first direction of the spin-transformed layer. Based on the synchronous injection of the second pulse, a third pulse 420 is injected into the second direction 410 of the spin-transformed layer. The first direction and the second direction intersect.

[0058] The first pulse 430 is obtained by vector calculation based on the second pulse 410 and the third pulse 420 .

[0059] In the embodiment of the present disclosure, for example, the patterned electrode is a cross, the second pulse is parallel to the X-axis direction, and the third pulse is parallel to the Y-axis direction. The second pulse and the third pulse are injected into the spin-type layer simultaneously, and the magnetic tunnel junction 20-40 (such as Figure 6 As shown in FIG, a first pulse is formed by superimposing a second pulse 410 and a third pulse 420. The magnitude and direction of the first pulse are controlled by regulating the magnitude and direction of the second pulse and the magnitude and direction of the third pulse.

[0060] Furthermore, for irregular patterned electrodes, the first pulse I of the tunnel junction MTJ region is accurately calculated by finite element analysis and other methods. add Size and direction.

[0061] Figure 5 The flow diagram of the fourth pulse according to the embodiment of the present disclosure is schematically shown.

[0062] like Figure 5 As shown, this embodiment further includes: injecting a fourth pulse 510 into the top electrode layer of the reconfigurable spin probability bit device, flowing through the tunnel junction 10-50 (such as Figure 6 (As shown) The magnetoresistance of the reconfigurable spin probability bit device is read by measuring the magnetoresistance state of the tunnel junction.

[0063] Among them, the magnetoresistance state includes:

[0064] The first resistance state is the low resistance state R P , which is used to characterize the parallel (P) alignment of the magnetization states of the magnetic free layer and the magnetic reference layer.

[0065] The second resistance state is the high resistance state R AP , which is used to characterize the antiparallel (AP) alignment of the magnetization states of the magnetic free layer and the magnetic reference layer.

[0066] Figure 6The structure of a reconfigurable spin probability bit device according to an embodiment of the present disclosure is schematically shown.

[0067] Figure 7 The flow diagram of the first pulse according to an embodiment of the present disclosure is schematically shown.

[0068] like Figure 6 and Figure 7 As shown, this embodiment includes: a spin polarization layer 10 and a magnetic free layer 220 .

[0069] The spin polarization layer 10 , ie, the bottom electrode layer, is configured to convert the injected first pulse into out-of-plane spin polarization and / or in-plane spin polarization based on the symmetry axis of the spin polarization layer 10 .

[0070] The magnetic free layer 20 is provided on the surface of the spin polarization layer 10 and is configured to have perpendicular magnetic anisotropy.

[0071] The magnitude and direction of the spin polarization are controlled by adjusting the magnitude of the first pulse and the angle between the direction of the first pulse and the low symmetry axis, so that the magnetization state of the magnetic free layer is switched between the first magnetization state and the second magnetization state, and the probability of switching to any magnetization state between the first magnetization state and the second magnetization state is adjusted.

[0072] Furthermore, the materials of the spin-activated layer 210 include: TMX2 materials with relatively low symmetry axes (TM = Ti, V, Cr, Mn, Cu, Zn, Zr, Nb, Mo, Ru, Rh, Pd, Cd, Hf, Ta, W, Re, Os, Ir, Pt; X = O, S, Se, Te) and materials with similar structures (TaIrTe4, NbIrTe4), and other materials with relatively low symmetry axes (CoPt, FePt, CuPt).

[0073] The materials of the magnetic free layer 20 include: at least one layer of magnetic material, which can be at least one of ferromagnetic materials (Fe, Co, Ni, CoFe, CoFeB, Co3Sn2S2, Fe3Sn2, two-dimensional FeGeTe, two-dimensional FeGaTe, etc.), ferrimagnetic materials (CoGd, CoTb, CoDy, CoHo, GdFeCo, FeTb, TbMn6Sn6, etc.), antiferromagnetic materials (IrMn3, PtMn, Mn3Pt, Mn3Pd, Mn3Sn, Mn3Ge, FeGe, FeSn, RuO2, two-dimensional TaCoTe2, etc.), or alloys of the above magnetic materials with 4f rare earth elements, other transition metal elements, etc., and have perpendicular magnetic anisotropy.

[0074] Furthermore, it also includes:

[0075] A spin or orbital Hall layer is provided on the first surface or the second surface of the spin-induced layer, and is used to convert the injected pulse into an orbital current, which converts the atoms in the spin-induced layer and / or the atoms in the magnetic free layer into a spin current, thereby improving the spin-induced efficiency;

[0076] The first surface is opposite to the second surface, and a magnetic free layer is provided on the first surface.

[0077] The materials of the spin or orbital Hall layer include: at least one of transition metals and rare earth elements (transition metal elements Pt, Ir, W, Ta, Hf, Zr, Mo, Ru, Rh, Pd, Cd, Ti, V, Cr, Mn, Zn, rare earth elements La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu) and their alloys, semimetals (Mn3Pt, Mn3Pd, Mn3Sn, Mn3Ge, FeGe, FeSn, Fe3Sn2, Co3Sn2S2, TbMn6Sn6), topological insulators (BiSb, BiSe, BiSbTe), etc., or alloys or multilayer heterostructures composed of the above materials.

[0078] Furthermore, it also includes:

[0079] The magnetic reference layer 40 is disposed on a surface of the magnetic free layer 20 away from the spin polarization layer 10 , and is used to provide a reference for switching the magnetization state.

[0080] The material of the magnetic reference layer 40 includes: at least one layer of magnetic material, which can be at least one of ferromagnetic materials (Fe, Co, Ni, CoFe, CoFeB, Fe3Sn2, two-dimensional FeGeTe, two-dimensional FeGaTe, etc.), ferrimagnetic materials (CoGd, CoTb, CoDy, CoHo, GdFeCo, FeTb, TbMn6Sn6, etc.), antiferromagnetic materials (IrMn3, PtMn, Mn3Pt, Mn3Pd, Mn3Sn, Mn3Ge, FeGe, FeSn, RuO2, two-dimensional TaCoTe2, etc.), and has perpendicular magnetic anisotropy.

[0081] The magnetic reference layer can also include at least one antiferromagnetic layer (IrMn3, PtMn, Mn3Pt, Mn3Pd, Mn3Sn, Mn3Ge, FeGe, FeSn, RuO2, two-dimensional TaCoTe2, etc.) or an artificial antiferromagnetic layer (Co / metal spacer layer / Co and other artificial antiferromagnetic multilayer film structures) to pin the magnetization direction of the above-mentioned magnetic materials.

[0082] Furthermore, the invention further includes a spacer layer 30 disposed between the magnetic free layer 20 and the magnetic reference layer 40 .

[0083] The top electrode layer 50 is disposed on the surface of the magnetic reference layer 40 .

[0084] The spacer layer has a non-magnetic material with a semiconductor or insulator band gap, including AlO x , MgO, TiO2, BN, GaSe, InSe, WSe2, WS2, MoTe2, MoSe2 and other materials.

[0085] The top electrode layer is used as an electrode and can be a metal with good conductivity, such as Al, Cu, Ag, Au, Pt, and Ti.

[0086] Those skilled in the art will appreciate that various combinations and / or combinations of features described in the various embodiments and / or claims of this disclosure may be made, even if such combinations or combinations are not explicitly described in this disclosure. In particular, various combinations and / or combinations of features described in the various embodiments and / or claims of this disclosure may be made, without departing from the spirit and teachings of this disclosure. All such combinations and / or combinations fall within the scope of this disclosure.

[0087] The embodiments of the present disclosure are described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of the present disclosure. Although each embodiment has been described separately above, this does not mean that the measures in each embodiment cannot be used in combination to advantage. The scope of the present disclosure is defined by the appended claims and their equivalents. Without departing from the scope of the present disclosure, those skilled in the art may make various substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. A control method for a reconfigurable spin probability bit device, characterized in that: include: Determining a symmetry axis of a spin polarization layer of a reconfigurable spin probability bit device, wherein the symmetry axis is a spin polarization control direction caused by a lattice symmetry breaking in the spin polarization layer; determining an angle between the direction of a first pulse injected into the spin-tonic layer and the symmetry axis according to the direction of the first pulse; By adjusting the magnitude of the first pulse and the magnitude of the included angle, the magnetization state of the magnetic free layer is switched between a first magnetization state and a second magnetization state, and the probability of switching to any one magnetization state between the first magnetization state and the second magnetization state is adjusted; The first magnetization state and the second magnetization state have opposite magnetization directions.

2. The method according to claim 1, characterized in that When the direction of the first pulse is parallel to the symmetry axis, the magnetization state of the magnetic free layer is switched between a first magnetization state and a second magnetization state; When the direction of the first pulse intersects the symmetry axis, the probability of the magnetization state of the magnetic free layer being any one of the first magnetization state and the second magnetization state is regulated.

3. The method according to claim 1, characterized in that The step of adjusting the magnitude of the first pulse and the magnitude of the included angle to switch the magnetization state of the magnetic free layer between the first magnetization state and the second magnetization state, and adjusting the probability of switching to any one of the first magnetization state and the second magnetization state, includes: injecting a first pulse into the spin polarization layer, wherein the first pulse is converted into spin polarization; controlling the state, magnitude, and direction of the spin polarization by regulating the magnitude and direction of the first pulse; The magnetization state of the magnetic free layer is switched according to the state, magnitude and direction of the spin polarization.

4. The method according to claim 3, characterized in that When the direction of the first pulse is parallel to the symmetry axis, the spin polarization state includes in-plane spin polarization and out-of-plane spin polarization; In a case where the direction of the first pulse is perpendicular to the symmetry axis, the state of the spin polarization includes in-plane spin polarization.

5. The method according to claim 1, characterized in that Injecting a second pulse into a first direction of the spin-transformed layer and injecting a third pulse into a second direction of the spin-transformed layer; wherein the first direction and the second direction intersect; The first pulse is obtained by vector calculation based on the second pulse and the third pulse.

6. The method according to claim 5, characterized in that The size and direction of the first pulse are controlled by adjusting the size and direction of the first pulse and the size and direction of the second pulse.

7. The method according to claim 1, characterized in that Also includes: injecting a fourth pulse into the reconfigurable spin probability bit device, and reading the magnetoresistance of the reconfigurable spin probability bit device by measuring the magnetoresistance state of the tunnel junction; The magnetoresistance state includes: a first resistance state, for characterizing that the magnetization states of the magnetic free layer and the magnetic reference layer are arranged in parallel; The second resistance state is used to characterize that the magnetization states of the magnetic free layer and the magnetic reference layer are arranged antiparallel.

8. A reconfigurable spin probability bit device, characterized in that: include: a spin polarization layer configured to convert the injected first pulse into out-of-plane spin polarization and / or in-plane spin polarization based on a symmetry axis of the spin polarization layer; a magnetic free layer, disposed on a surface of the spin polarization layer and configured to have perpendicular magnetic anisotropy; The magnitude and direction of the spin polarization are controlled by regulating the magnitude of the first pulse and the angle between the direction of the first pulse and the symmetry axis, so that the magnetization state of the magnetic free layer is switched between the first magnetization state and the second magnetization state, and the probability of switching to any magnetization state between the first magnetization state and the second magnetization state is regulated.

9. The reconfigurable spin probability bit device according to claim 8, characterized in that: Also includes: A spin or orbital Hall layer, disposed on the first surface or the second surface of the spin-type layer, for converting the injected pulse into an orbital current and converting the atoms in the spin-type layer and the atoms in the magnetic free layer into spin currents; The first surface is opposite to the second surface, and the magnetic free layer is provided on the first surface.

10. The reconfigurable spin probability bit device according to claim 8, characterized in that: Also includes: The magnetic reference layer is arranged on a surface of the magnetic free layer away from the spin polarization layer, and is used to provide a reference for switching the magnetization state.

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