Plasma forming device and plasma source system

Abstract

The invention discloses a plasma forming apparatus and a plasma source system. The plasma forming device comprises a radio frequency power supply module, an impedance matching module, an acquisition control module and at least two distribution modules, the output end of the radio frequency power supply module is electrically connected with the input end of the impedance matching module; the input end of each distribution module is electrically connected with the output end of the impedance matching module; the distribution modules are positioned on one side of an insulating window in the plasma reaction chamber and are sequentially arranged along a first direction; the distribution module is used for coupling the radio frequency energy output by the radio frequency power supply module to a corresponding area of the plasma reaction chamber; and the acquisition control module is used for respectively acquiring the current signal in each distribution module, and independently adjusting the output power of the corresponding distribution module based on the acquired current signal of each distribution module. The plasma forming device and the plasma source system provided by the invention are low in cost, simple in impedance debugging and applicable to a large-area and high-uniformity plasma coating process.

Description

Technical Field

[0001] The present invention relates to the field of plasma technology, and in particular to a plasma forming device and a plasma source system. Background Art

[0002] Plasma technology is playing an increasingly important role in many specialized applications. In microelectronics, the highly integrated integrated circuit (IC) fabrication requires various ultra-fine processes, which would be difficult to achieve without the assistance of plasma technologies such as etching and ashing. Plasma-enhanced chemical vapor deposition (PECVD) is a crucial tool in the fabrication of large-scale integrated circuit boards, liquid crystal displays, and solar cells. In the materials field, research on plasma surface modification is gaining increasing attention, particularly in medical materials, where improving biocompatibility through plasma treatment is a current research hotspot. Many other fields, such as the use of plasma for sterilization and inactivation of medical devices, the synthesis of carbon nanotubes using plasma technology, and the improvement of semiconductor material performance through plasma injection, all demonstrate the unique characteristics and promising development prospects of plasma.

[0003] The most critical aspect of using these plasma technologies is the fabrication of a plasma generator capable of producing plasma with the desired parameters, known as a plasma source. In recent years, with the increasing demand for large-area plasma processing applications such as large-scale integrated circuit processing, solar cell materials, and large-scale flat-panel displays, the development of plasma sources capable of generating large-area, high-density, uniform plasma has become a research priority in this field. Summary of the Invention

[0004] The present invention provides a plasma forming device and a plasma source system, which are low in cost, simple in impedance adjustment, and applicable to large-area and high-uniformity plasma coating processes.

[0005] According to one aspect of the present invention, a plasma forming device is provided, the plasma forming device comprising: a radio frequency power supply module, an impedance matching module, an acquisition control module and at least two distribution modules; The output end of the radio frequency power supply module is electrically connected to the input end of the impedance matching module; The input end of each distribution module is electrically connected to the output end of the impedance matching module; Each of the distribution modules is located on one side of the insulating window in the plasma reaction chamber and is arranged in sequence along a first direction; The distribution module is used to couple the radio frequency energy output by the radio frequency power supply module to the corresponding area of ​​the plasma reaction chamber; The acquisition control module is used to respectively acquire the current signal of each distribution module, and independently adjust the output power of the corresponding distribution module based on the acquired current signal of each distribution module.

[0006] Optionally, the distribution module includes at least one distribution unit; The distribution unit includes an inductance unit and an adjustable capacitance unit; The acquisition control module is used to respectively acquire the current signal in each of the distribution units, and independently adjust the capacitance value of the adjustable capacitance unit in the corresponding distribution unit based on the acquired current signal of each distribution unit.

[0007] Optionally, the distribution module includes at least two distribution units connected in parallel; The distribution units in each of the distribution modules are arranged in sequence along the first direction.

[0008] Optionally, the plasma forming device provided in this embodiment further includes a metal row and a number of metal strips equal to the number of the distribution modules, wherein the total lengths of the metal strips are equal; The metal belts correspond to the distribution modules one by one; The first end of the metal bar is electrically connected to the output end of the impedance matching module, and the second end of the metal bar is electrically connected to the first end of each of the metal strips; The second end of the metal strip is electrically connected to the input end of the corresponding distribution module.

[0009] Optionally, the plasma forming device provided in this embodiment further includes a first metal shell and a partition plate; The shape of the first metal shell matches the shape of the insulating window; The partition plate is located in the inner cavity of the first metal shell, and is used to divide the inner cavity of the first metal shell into a first cavity and a second cavity along the thickness direction of the first metal shell, wherein when the first metal shell is located on one side of the insulating window, the first cavity is located on a side of the second cavity away from the insulating window; The inductance unit in each of the distribution units is located in the second cavity, the adjustable capacitance unit in each of the distribution units is located in the first cavity, or each of the distribution units is located in the second cavity.

[0010] Optionally, the plasma forming device provided in this embodiment further includes a cooling liquid transmission module; Each of the inductance units comprises a hollow inductance coil; The cooling liquid transmission module is also used to transmit cooling liquid to each of the hollow inductor coils.

[0011] Optionally, the inductor unit includes a plurality of second hollow coils and a plurality of first hollow coils extending along the first direction and arranged along the second direction; A second hollow coil is provided between two adjacent first hollow coils, and the second hollow coil is used to connect the same ends of the two adjacent first hollow coils, wherein the first direction intersects with the second direction.

[0012] Optionally, along the first direction, a plurality of the distribution modules are evenly arranged in sequence.

[0013] Optionally, along the first direction, the length of each distribution module ranges from 0.5m to 1.5m.

[0014] According to another aspect of the present invention, a plasma source system is provided, comprising a plasma reaction chamber and a plasma forming device according to any embodiment of the present invention; wherein each of the distribution modules is located on one side of an insulating window of the plasma reaction chamber.

[0015] An embodiment of the present invention provides a plasma forming device that utilizes only one RF power module and one impedance matching module. Through an acquisition control module and multiple downstream distribution modules, it achieves a zoning control effect similar to that of multiple independent sources, reducing the cost and structural complexity of the plasma forming device. Furthermore, multiple distribution modules are arranged sequentially along a first direction, and the output power of each distribution module is individually controlled, so that the output power of all distribution modules is not exactly the same. This can address the issue of uneven plasma density distribution in large-scale plasma processes requiring high uniformity. In summary, the plasma forming device provided by an embodiment of the present invention is low-cost, simple to adjust impedance, and applicable to large-area, high-uniformity plasma coating processes.

[0016] It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present invention, nor is it intended to limit the scope of the present invention. Other features of the present invention will become readily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0018] Figure 1 is a schematic structural diagram of a plasma forming device provided according to an embodiment of the present invention; Figure 2 is a structural diagram of an impedance matching module provided according to an embodiment of the present invention; Figure 3 is a structural schematic diagram of an impedance matching unit provided according to an embodiment of the present invention; Figure 4 is a structural diagram of another impedance matching unit provided according to an embodiment of the present invention; Figure 5 is a structural diagram of another impedance matching unit provided according to an embodiment of the present invention; Figure 6 is a schematic structural diagram of another plasma forming device provided according to an embodiment of the present invention; Figure 7 is a schematic structural diagram of another plasma forming device provided according to an embodiment of the present invention; Figure 8 is a schematic structural diagram of another plasma forming device provided according to an embodiment of the present invention; Figure 9 is a structural schematic diagram of a first cavity provided according to an embodiment of the present invention; Figure 10 is a schematic structural diagram of a second cavity provided according to an embodiment of the present invention; Figure 11 4 is a schematic structural diagram of a plurality of inductor units provided according to an embodiment of the present invention. DETAILED DESCRIPTION

[0019] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0020] It should be noted that the terms "first", "second", etc. in the description and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0021] Figure 1 is a schematic structural diagram of a plasma forming device provided according to an embodiment of the present invention, with reference to Figure 1 The plasma forming device provided in this embodiment includes a radio frequency power module 110, an impedance matching module 120, a collection and control module 130, and at least two distribution modules 140. The output end of the radio frequency power module 110 is electrically connected to the input end of the impedance matching module 120. The input end of each distribution module 140 is electrically connected to the output end of the impedance matching module 120. Each distribution module 140 is located on one side of an insulating window 200 in a plasma reaction chamber and is arranged sequentially along a first direction X. The distribution modules 140 are used to couple the radio frequency energy output by the radio frequency power module 110 to corresponding areas of the plasma reaction chamber. The collection and control module 130 is used to respectively collect current signals from each distribution module 140 and independently adjust the output power of the corresponding distribution module 140 based on the collected current signals of each distribution module 140.

[0022] Specifically, the RF power module 110 is used to output RF energy, and the impedance matching module 120 is used to match the impedance of the RF power module 110 with the impedance in the plasma reaction chamber. A RF line and a communication line are connected between the RF power module 110 and the impedance matching module 120. The RF line connects the output end of the RF power module 110 and the input end of the impedance matching module 120 to transmit RF energy. The communication line is mainly used to transmit control signals and data to ensure that the impedance matching module 120 can adjust the impedance of the impedance matching module 120 according to the output of the RF power module 110, thereby achieving optimal power transmission and reducing reflection loss. The output frequency of the RF power module 110 provided in this embodiment can be 13.56 MHz, and the output power can be 20 kW.

[0023] Figure 2 is a schematic structural diagram of an impedance matching module provided according to an embodiment of the present invention, with reference to Figure 2The impedance matching module 120 provided in this embodiment includes an input terminal RF IN, a sampling unit 121, a main control unit 122, a drive motor 123, an impedance matching unit 124, a communication unit 125, and an output terminal RF OUT. The sampling unit 121 collects voltage and current information in the circuit and transmits it to the main control unit 122. The main control unit 122 sends instructions to the drive motor 123 based on the voltage and current information collected by the sampling unit 121. The drive motor 123 adjusts the impedance of the impedance matching unit 124 according to the instructions to match the impedance of the plasma reaction chamber with the impedance of the RF power module 110, thereby maximizing the transmission of the RF energy output by the RF power module 110 to each distribution module 140. The communication unit 125 can transmit signals from the main control unit 122 to the client, allowing the user to control the impedance of the impedance matching unit 124 on the host computer. Figure 3 is a structural diagram of an impedance matching unit provided according to an embodiment of the present invention. Figure 4 is a structural diagram of another impedance matching unit provided according to an embodiment of the present invention. Figure 5 This is a schematic diagram of the structure of another impedance matching unit provided according to an embodiment of the present invention, with reference to Figure 3-Figure 5 The impedance matching unit 124 provided in this embodiment may be an L-shaped impedance matching unit or a π-shaped impedance matching unit, and the impedance of the impedance matching unit 124 is adjustable.

[0024] The output end of the impedance matching module 120 is the output end RF OUT of the impedance matching unit 124. The input ends of each distribution module 140 are connected to the same point, which is the output end RF OUT of the impedance matching unit 124. It can be seen that in this embodiment, the transmission efficiency of the RF energy in each distribution module 140 can be changed simultaneously and the amount of change is the same simply by adjusting the impedance of the impedance matching unit 124. Therefore, there is no need to provide a separate impedance matching module 120 for each distribution module 140, which can simplify the adjustment steps, reduce the influencing factors during adjustment, and reduce costs.

[0025] Each distribution module 140 is located in a different area outside the insulating window 200, wherein plasma is generated inside the insulating window 200. When the insulating window 200 is rectangular, the first direction X is the length of the insulating window 200. In this embodiment, a plurality of distribution modules 140 are provided in the plasma forming apparatus. The number of distribution modules 140 can be 3, 4, or 5, etc. Each distribution module 140 corresponds to a different area within the plasma reaction chamber. Therefore, the plasma generating apparatus provided in this embodiment can be applied to large-area coating processes.

[0026] The current signal in the distribution module 140 can reflect the output power of the distribution module 140. The output power of the distribution module 140 can affect the ionization density and ionization efficiency of the process gas in the area within the plasma reaction chamber corresponding to the distribution module 140, thereby affecting the film thickness of the corresponding coating area. In this embodiment, closed-loop control is achieved by providing an acquisition control module 130 to collect the current signal in each distribution module 140 and individually adjust the output power of the distribution module 140 based on the current signal collected from the distribution module 140. The output power of each distribution module 140 is adjusted independently and does not affect each other. During the process of ionization of the process gas in the plasma reaction chamber, the output power of each distribution module 140 is controlled to achieve uniformity of the plasma in each area within the plasma reaction chamber, thereby achieving uniformity of the film layer over a large area. For example, when the acquisition control module 130 collects that the current signal of the distribution module 140 located on the side of the insulating window 200 is smaller than the current signal of the distribution module 140 located in the middle area of ​​the insulating window 200, the acquisition control module 130 adjusts the output power of at least one distribution module 140 to control the output power of the distribution module 140 located on the side of the insulating window 200 to be greater than the output power of the distribution module 140 located in the middle area of ​​the insulating window 200.

[0027] After the acquisition control module 130 has adjusted the output power of the distribution module 140 , it can also determine whether the adjusted output power is adjusted to the desired level based on the collected current signal.

[0028] This embodiment provides a plasma forming device that utilizes only one RF power module and one impedance matching module. Through an acquisition control module and multiple downstream distribution modules, it achieves a zoning control effect similar to that of multiple independent sources, reducing the cost and structural complexity of the plasma forming device. Furthermore, multiple distribution modules are arranged sequentially along a first direction, and the output power of each distribution module is individually controlled, resulting in variations in the output power of all distribution modules. This addresses the issue of uneven plasma density distribution in large-scale plasma processes requiring high uniformity. In summary, the plasma forming device provided in this embodiment is low-cost, simple to adjust impedance, and suitable for large-area, high-uniformity plasma coating processes.

[0029] Optional, Figure 6 is a schematic structural diagram of another plasma forming device provided according to an embodiment of the present invention, with reference to Figure 6The distribution module 140 includes at least one distribution unit 141; the distribution unit 141 includes an inductance unit 1411 and an adjustable capacitance unit 1412; the acquisition control module 130 is used to respectively collect the current signals in each distribution unit 141, and based on the collected current signals of each distribution unit 141, independently adjust the capacitance value of the adjustable capacitance unit 1412 in the corresponding distribution unit 141.

[0030] Specifically, the adjustable capacitor unit 1412 includes at least one adjustable capacitor. The inductor unit 1411 and the adjustable capacitor unit 1412 in the distribution unit 141 can be connected in series. The first end of the inductor unit 1411 can be electrically connected to the output terminal RF OUT of the impedance matching unit 124, and the second end of the inductor unit 1411 can be electrically connected to the first end of the adjustable capacitor unit 1412. The second end of the adjustable capacitor unit 1412 is grounded. Each adjustable capacitor unit 1412 is independent of each other, and the acquisition control module 130 can independently control the capacitance value of each adjustable capacitor unit 1412.

[0031] The capacitance value of the adjustable capacitance unit 1412 will affect the output power of the distribution unit 141. The acquisition control module 130 can adjust the output power of the distribution unit 141 by adjusting the capacitance value of the adjustable capacitance unit 1412 in the distribution unit 141, thereby adjusting the ionization condition of the process gas in the area corresponding to the distribution unit 141, so as to achieve the uniformity of the plasma in each area in the plasma reaction chamber, thereby achieving the uniformity of the large-area film layer.

[0032] Optional, Figure 7 is a schematic structural diagram of another plasma forming device provided according to an embodiment of the present invention, with reference to Figure 7 The distribution module 140 includes at least two distribution units 141 connected in parallel; the distribution units 141 in each distribution module 140 are arranged in sequence along the first direction X.

[0033] Specifically, distributing module 140 including at least two distribution units 141 can further improve the uniformity of plasma regulation across various regions within the plasma reaction chamber, further improving the uniformity of large-area film layers. Furthermore, distributing module 140 including at least two distribution units 141 connected in parallel can reduce the number of connecting wires between impedance matching module 120 and distribution units 141.

[0034] It should be noted that Figure 7 The acquisition control module 130 is shown electrically connected to one adjustable capacitor unit 1412 for illustrative purposes only and does not limit the present invention. Specifically, the acquisition control module 130 is electrically connected to each adjustable capacitor unit 1412 and can independently control the capacitance value of each adjustable capacitor unit 1412.

[0035] Optional, Figure 8 is a schematic structural diagram of another plasma forming device provided according to an embodiment of the present invention, with reference to Figure 1 as well as Figure 6-Figure 8 The plasma forming device provided in this embodiment further includes a metal row 150 and a number of metal strips 160 equal to the number of distribution modules 140, wherein the total length of each metal strip 160 is equal; the metal strips 160 correspond one-to-one to the distribution modules 140; the first end of the metal row 150 is electrically connected to the output end of the impedance matching module 120, and the second end of the metal row 150 is electrically connected to the first end of each metal strip 160; the second end of the metal strip 160 is electrically connected to the input end of its corresponding distribution module 140.

[0036] Specifically, the first ends of each metal strip 160 converge and are electrically connected to the metal bar 150. The provision of the metal bar 150 facilitates the electrical connection of the first end of each metal strip 160 to the output end of the impedance matching module 120. Each metal strip 160 is used to transmit the RF energy output by the RF power module to the corresponding distribution module 140. When the distribution module 140 includes multiple distribution units 141, the first end of each distribution unit 141 is electrically connected to the second end of the metal strip 160 corresponding to the distribution module 140. Therefore, when the distribution module 140 includes multiple distribution units 141 connected in parallel, it is not necessary to provide a number of metal strips 160 equal to the number of distribution units 141. This improves the uniformity of plasma distribution and reduces the cost of the plasma formation device.

[0037] Setting the total length of each metal strip 160 equal prevents variations in the transmission efficiency of RF energy received by each distribution module 140 due to differences in the length of the metal strips 160. The metal strips 160 and the metal bar 150 can be made of the same material, such as copper, to improve their electrical conductivity, heat dissipation, and voltage and current resistance. The metal bar 150 can be located centrally between the multiple distribution modules 140.

[0038] In this embodiment, the distribution module 140 and the impedance matching module 120 are electrically connected through multiple metal strips 160 instead of wires. This is mainly because the metal strips 160 have a certain thickness, can withstand high voltage and large current, have a long service life, and can further improve the reliability of the plasma forming device.

[0039] It should be noted that Figure 8 The exemplary plasma forming apparatus shown includes three distribution modules 140 . Each distribution module 140 includes two distribution units 141 connected in parallel. Each distribution unit 141 includes an adjustable capacitance unit 1412 and an inductance unit 1411 connected in series.

[0040] Optional, continue to refer to Figure 8 The plasma forming device provided in this embodiment also includes a first metal shell 170 and a partition plate 180; the shape of the first metal shell 170 matches the shape of the insulating window; the partition plate 180 is located in the inner cavity of the first metal shell 170, and the partition plate 180 is used to divide the inner cavity of the first metal shell 170 into a first cavity 171 and a second cavity 172 along the thickness direction of the first metal shell 170, wherein, when the first metal shell 170 is located on one side of the insulating window, the first cavity 171 is located on the side of the second cavity 172 away from the insulating window; the inductance unit 1411 in each distribution unit 141 is located in the second cavity 172, and the adjustable capacitance unit 1412 in each distribution unit 141 is located in the first cavity 171, or, each distribution unit 141 is located in the second cavity 172.

[0041] Specifically, the shape of the first metal shell 170 matches the shape of the insulating window, which can be understood as the same shape as the insulating window, and the size can be the same or in the same direction, and the size of the first metal shell 170 is slightly smaller than the size of the insulating window.

[0042] All distribution modules 140 are located within a first metal housing 170. The first metal housing 170 facilitates the overall movement of the multiple distribution modules 140 and protects the distribution modules 140 from contamination by dust, moisture, etc. The partition plate 180 provides shielding to prevent signal interference. Figure 9 is a structural schematic diagram of a first cavity provided according to an embodiment of the present invention, Figure 10 is a schematic structural diagram of a second cavity provided according to an embodiment of the present invention, with reference to Figure 9 and Figure 10 Each metal strip 160 is located within the first cavity 171, and each distribution unit 141 can be located within the second cavity 172. Alternatively, the adjustable capacitor unit 1412 and each metal strip 160 in each distribution unit 141 can be located within the first cavity 171, leaving only the inductor unit 1411 within the second cavity 172, thereby increasing the area available for the inductor unit 1411. The second cavity 172 can be located on the surface of the insulating window. The inductor unit 1411 within the second cavity 172 transmits radio frequency energy to the plasma reaction chamber via inductive coupling, generating a discharge and thus generating plasma.

[0043] It should be noted that in this embodiment, multiple distribution modules 140 are set in the same first metal shell 170. In actual applications, the same number of first metal shells 170 as the distribution modules 140 can be set according to actual conditions, and only one distribution module 140 is set in each first metal shell 170.

[0044] Optionally, the impedance matching module further includes a second metal shell. The material of the second metal shell is the same as that of the first metal shell, and both can be aluminum alloy.

[0045] Specifically, the sampling unit, the main control unit, the driving motor, the impedance matching unit and the communication unit in the impedance matching module may all be located in the impedance matching module.

[0046] Optionally, along the first direction, the length of each distribution module ranges from 0.5m to 1.5m. Specifically, along the first direction, the length of each distribution module can be 0.5 m, 1 m, or 0.8 m, etc. Setting the distribution module length range from 0.5 m to 1.5 m allows the distribution module to control the ionization of the process gas within a 0.5 m to 1.5 m area within the plasma reaction chamber. When the plasma forming device includes three distribution modules, the plasma shaping device provided in this embodiment can be applied to a 3 m long film deposition process. Optionally, the plasma forming device provided in this embodiment further includes a cooling liquid transmission module; each inductance unit includes a hollow inductance coil; and the cooling liquid transmission module is further used to transmit cooling liquid to each hollow inductance coil.

[0047] Specifically, during operation of the plasma forming device, the inductor unit generates a significant amount of heat. In this embodiment, the inductor unit is configured as a hollow inductor coil. The coolant delivery module delivers coolant into the hollow inductor coil when its temperature exceeds a set threshold, thereby lowering the temperature of the hollow inductor coil and ensuring proper operation of the plasma forming device. The hollow inductor coil can be made of copper and have a hollow interior, allowing for the flow of coolant, which can be water.

[0048] Optional, Figure 11 is a schematic diagram of a structure of multiple inductance units provided according to an embodiment of the present invention, with reference to Figure 11 The inductor unit 1411 includes a plurality of second hollow coils 152 and a plurality of first hollow coils 151 extending along the first direction X and arranged along the second direction Y. A second hollow coil 152 is arranged between two adjacent first hollow coils 151. The second hollow coil 152 is used to connect the same ends of the two adjacent first hollow coils 151, wherein the first direction X intersects with the second direction Y.

[0049] Specifically, the second hollow coil 152 is used to connect the same end of two adjacent first hollow coils 151. That is, the second hollow coil 152 connects the first end of two adjacent first hollow coils 151, or the second hollow coil 152 connects the second end of two adjacent first hollow coils 151. The second hollow coil 152 alternately connects the first end and the second end of the first hollow coil 151. The multiple second hollow coils 152 and the multiple first hollow coils 151 form the inductor unit 1411 into a plurality of roughly 'S'-shaped bend units. The inductor unit 1411 in this embodiment can better ionize the process gas in the plasma reaction chamber and improve the uniformity of the plasma distribution in the plasma reaction chamber.

[0050] Optional, continue to refer to Figure 11 , along the first direction X, the multiple distribution modules 140 are evenly arranged in sequence, which means that the distance between any two adjacent distribution modules 140 is a fixed value.

[0051] Specifically, multiple distribution modules 140 are arranged evenly, which can further improve the uniformity of plasma distribution.

[0052] This embodiment further provides a plasma source system, which includes a plasma reaction chamber and a plasma forming device provided by any embodiment of the present invention; wherein each distribution module is located on one side of the insulating window of the plasma reaction chamber.

[0053] Specifically, the plasma source system provided in this embodiment can be applied to thin film deposition processes.

[0054] The plasma source system provided in this embodiment includes the plasma forming device provided in any embodiment of the present invention. Therefore, the plasma source system provided in this embodiment has the beneficial effects of the plasma forming device provided in any embodiment of the present invention, which will not be repeated here.

[0055] It should be understood that the various forms of the processes shown above can be used to reorder, add, or delete steps. For example, the steps described in the present invention can be performed in parallel, sequentially, or in a different order, as long as the desired results of the technical solution of the present invention can be achieved. This is not limited herein.

[0056] The above specific embodiments do not limit the scope of protection of the present invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions may be made based on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention are intended to be included within the scope of protection of the present invention.

Claims

1. A plasma forming device, characterized in that: include: RF power supply module, impedance matching module, acquisition control module and at least two distribution modules; The output end of the radio frequency power supply module is electrically connected to the input end of the impedance matching module; The input end of each distribution module is electrically connected to the output end of the impedance matching module; Each of the distribution modules is located on one side of the insulating window in the plasma reaction chamber and is arranged in sequence along a first direction; The distribution module is used to couple the radio frequency energy output by the radio frequency power supply module to the corresponding area of ​​the plasma reaction chamber; The acquisition control module is used to respectively acquire the current signal of each distribution module, and independently adjust the output power of the corresponding distribution module based on the acquired current signal of each distribution module.

2. The plasma forming device according to claim 1, wherein The distribution module includes at least one distribution unit; The distribution unit includes an inductance unit and an adjustable capacitance unit; The acquisition control module is used to respectively acquire the current signal in each of the distribution units, and independently adjust the capacitance value of the adjustable capacitance unit in the corresponding distribution unit based on the acquired current signal of each distribution unit.

3. The plasma forming device according to claim 2, characterized in that The distribution module includes at least two distribution units connected in parallel; The distribution units in each of the distribution modules are arranged in sequence along the first direction.

4. The plasma forming device according to claim 2, wherein: Also included are metal bars and metal strips equal in number to the distribution modules, wherein the total lengths of the metal strips are equal; The metal belts correspond to the distribution modules one by one; The first end of the metal bar is electrically connected to the output end of the impedance matching module, and the second end of the metal bar is electrically connected to the first end of each of the metal strips; The second end of the metal strip is electrically connected to the input end of the corresponding distribution module.

5. The plasma forming device according to claim 2, wherein: Also included is a first metal housing and a separator plate; The shape of the first metal shell matches the shape of the insulating window; The partition plate is located in the inner cavity of the first metal shell, and is used to divide the inner cavity of the first metal shell into a first cavity and a second cavity along the thickness direction of the first metal shell, wherein when the first metal shell is located on one side of the insulating window, the first cavity is located on a side of the second cavity away from the insulating window; The inductance unit in each of the distribution units is located in the second cavity, the adjustable capacitance unit in each of the distribution units is located in the first cavity, or each of the distribution units is located in the second cavity.

6. The plasma forming device according to claim 2, wherein: Also included is a coolant delivery module; Each of the inductance units comprises a hollow inductance coil; The cooling liquid transmission module is also used to transmit cooling liquid to each of the hollow inductor coils.

7. The plasma forming device according to claim 2, wherein: The inductor unit includes a plurality of second hollow coils and a plurality of first hollow coils extending along the first direction and arranged along the second direction; A second hollow coil is provided between two adjacent first hollow coils, and the second hollow coil is used to connect the same ends of the two adjacent first hollow coils, wherein the first direction intersects with the second direction.

8. The plasma forming device according to claim 1, wherein Along the first direction, the plurality of distribution modules are evenly arranged in sequence.

9. The plasma forming device according to any one of claims 1 to 8, characterized in that: Along the first direction, the length of each distribution module ranges from 0.5m to 1.5m.

10. A plasma source system, characterized in that: It comprises a plasma reaction chamber and the plasma forming device according to any one of claims 1 to 9; wherein each of the distribution modules is located on one side of the insulating window of the plasma reaction chamber.

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