Electron multiplication source and application thereof

Abstract

The invention relates to the field of electron multiplication sources, and provides an electron multiplication source and application thereof, and the electron multiplication source comprises a tube body with a tube cavity; the electron source comprises an optical fiber and an electron excitation layer; the anode assembly is located on an emergent path of the electron beam, is opposite to the light emergent end of the optical fiber and is arranged at an interval; the dynode group comprises at least one dynode arranged on the cavity wall of the tube cavity; and a power supply assembly. The electron multiplication source has the advantages of being small in size, high in integration degree, good in stability, high in multiplication effect and the like.

Description

Technical Field

[0001] The present application relates to the field of electron multiplication technology, and in particular to an electron multiplication source and its application. Background Art

[0002] Electron multiplication sources (EMSs) utilize high-speed charged particles generated by an electron source to collide with the electron multiplier electrodes in an electron multiplier tube (EMT) to generate multiple secondary electrons, thereby amplifying the electron signal. Traditional electron sources, including thermal emission and field emission sources, are not only bulky and difficult to integrate, but also have high requirements for the application environment and produce electrons with poor stability. Furthermore, the bulk of EMTs used in traditional technologies also limits their application. Summary of the Invention

[0003] Based on this, an embodiment of the present application provides an electron multiplication source with good stability and high integration and its application.

[0004] In a first aspect, the present application provides an electron multiplying source, comprising:

[0005] A tubular body, wherein the tubular body has a lumen;

[0006] An electron source, the electron source comprising an optical fiber and an electron excitation layer, the light-emitting end of the optical fiber being located within the tube cavity, the electron excitation layer being disposed at the light-emitting end of the optical fiber, and the electron excitation layer being disposed on a light-emitting path of a laser emitted from the optical fiber, so that the electron excitation layer can emit an electron beam under the excitation of the laser; the material of the electron excitation layer comprising at least one of a zero-dimensional material, a one-dimensional material, and a two-dimensional material;

[0007] an anode assembly, the anode assembly being located on the emission path of the electron beam, opposite to and spaced from the light-emitting end of the optical fiber;

[0008] a dynode group, the dynode group including at least one dynode disposed on the lumen wall of the tube cavity, the dynode being used to generate secondary electrons after electron bombardment; each dynode is located on the lumen wall of the tube cavity between the electron excitation layer and the anode assembly, and the potential of the dynode group increases step by step from the electron excitation layer to the anode assembly; and

[0009] A power supply component is connected to the anode component, the electron excitation layer and the dynode group respectively, and is used to provide a potential difference between the anode component and the electron excitation layer, and a potential gradient in the dynode group.

[0010] In some embodiments, the tube is sleeved on the optical fiber.

[0011] Optionally, the outer diameter of the optical fiber is 125 μm to 1000 μm.

[0012] In some embodiments, the dynode group includes at least two dynodes spaced apart from each other, the dynodes extending circumferentially along the lumen, the length of the dynodes being less than or equal to the circumference of the edge of the circumferential cross-section of the lumen, and the length of the dynodes being the size of the dynodes along the circumference of the lumen.

[0013] In some embodiments, the length of the dynode is 0.4 to 0.6 times the perimeter of the edge of the circumferential cross-section of the lumen.

[0014] In some embodiments, the spacing distance between adjacent dynodes is 100 μm to 1000 μm.

[0015] In some embodiments, the width of the dynode is 100 μm to 500 μm, and the width of the dynode is the dimension of the dynode along the axial direction of the lumen.

[0016] In some embodiments, the positive electrode of the power supply is connected to the anode assembly using a first wire, and the negative electrode of the power supply is connected to the electron excitation layer using a second wire; the power supply assembly further includes a third wire, one end of the third wire is connected to the first wire, and the other end of the third wire is connected to the second wire;

[0017] The power supply component also includes a plurality of resistors, which are arranged at intervals on the third wire. Each of the dynodes is independently connected to the third wire through a fourth wire, and the fourth wire is respectively connected between adjacent resistors to form a step-by-step increasing potential for the dynode group.

[0018] In some embodiments, the dynode group includes a dynode covering a cavity wall of the lumen between the electron excitation layer and the anode assembly.

[0019] In some embodiments, the tube body includes at least one of a quartz optical fiber and a sapphire optical fiber.

[0020] In some embodiments, the material of the dynode includes at least one of beryllium copper alloy, nickel silver alloy, magnesium oxide, beryllium oxide, aluminum oxide, cesium oxide, and antimony oxide.

[0021] In some embodiments, the thickness of the dynode is 100 nm to 10 μm.

[0022] In some embodiments, the electron source further includes a conductive connection layer disposed on the optical fiber, and the conductive connection layer is electrically connected to the electron excitation layer.

[0023] In some embodiments, the thickness of the electron excitation layer is less than or equal to 50 nm.

[0024] In a second aspect, the present application provides an application of an electron multiplying source as described in the first aspect, wherein the electron multiplying source is used to prepare at least one of an electron beam exposure machine, a free electron laser, an electron beam welder, a magnetron, and an X-ray generator.

[0025] Compared with traditional technologies, this application has at least the following beneficial effects:

[0026] The electron source in the electron multiplication source of the present application utilizes a combination of optical fiber and an electron excitation layer of low-dimensional material. Compared with traditional electron sources, it has a smaller volume and can be adapted to electron multiplier tubes of smaller size, thereby improving the integration level and facilitating assembly. Moreover, the electron emission method of the present application is cold excitation by laser irradiation, which causes low damage to the equipment. The low-dimensional material has an atomic-level thickness, no dangling bonds and stable properties, which can take into account both electron emission efficiency and stability, and thus can ensure the collision of electrons with the dynode group to generate more secondary electrons, thereby having a higher multiplication effect. In addition, the switch for the electron source to excite and generate electrons is controlled by a laser, which can realize ultra-high frequency electronic switching. The electron multiplication source of the present application has the characteristics of small size, high integration level, good stability and high multiplication effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 This is a schematic structural diagram of an electron multiplication source provided in one embodiment of the present application;

[0028] Figure 2 This is a schematic structural diagram of another electron multiplication source provided in one embodiment of the present application.

[0029] Among them, 10-tube body; 11-tube cavity; 20-electron source; 21-optical fiber; 22-electron excitation layer; 23-conductive connection layer; 30-anode assembly; 40-dynode group; 41-dynode; 50-power supply assembly; 51-power supply; 52-resistor; 53-first wire; 54-second wire; 55-third wire; 56-fourth wire. DETAILED DESCRIPTION

[0030] Below in conjunction with embodiment and example, the application is further described in detail These embodiment and example are only used to illustrate the application and are not used to limit the scope of the application, and the purpose of providing these embodiment and example is to make the understanding of the disclosure of the application more thorough and comprehensive. It should also be understood that the application can be implemented in many different forms and is not limited to the embodiment and example described herein. Those skilled in the art can make various changes or modifications without violating the connotation of the application, and the equivalent form obtained also falls within the protection scope of the application. In addition, in the description below, a large amount of specific details are given in order to provide a more complete understanding of the application, and it should be understood that the application can be implemented without one or more of these details.

[0031] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0032] In this application, the terms "optionally," "optional," and "optional" mean optional or dispensable, i.e., they refer to either option being selected from two parallel options: "with" or "without." If a technical solution contains multiple "optional" clauses, each "optional" clause is independent unless otherwise specified and there are no contradictions or constraints.

[0033] In this application, the terms "first" and "second" in "the first aspect" and "the second aspect" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or quantity, nor should they be understood as implicitly indicating the importance or quantity of the technical features indicated. Furthermore, "first" and "second" serve only as non-exhaustive enumeration and description and should be understood not to constitute a closed-ended limitation on quantity.

[0034] In this application, the technical features described in an open manner include closed technical solutions composed of the listed features, and also include open technical solutions containing the listed features.

[0035] In this application, when referring to a numerical interval (i.e., a numerical range), unless otherwise specified, the distribution of the optional numerical values ​​within the numerical interval is deemed to be continuous and includes the two numerical endpoints of the numerical interval (i.e., the minimum and maximum values), as well as each numerical value between the two numerical endpoints. Unless otherwise specified, when a numerical interval refers only to integers within the numerical interval, it includes the two endpoint integers of the numerical range, as well as each integer between the two endpoints, which is equivalent to directly listing each integer. When multiple numerical ranges are provided to describe a feature or characteristic, these numerical ranges can be combined. In other words, unless otherwise specified, the numerical ranges disclosed in this application should be understood to include any and all subranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, percentage, ratio, etc. "Numerical interval" is broadly allowed to include quantitative intervals such as percentage intervals, ratio intervals, and ratio intervals.

[0036] All documents mentioned in this application are cited as references in this application, just as each document is cited as reference separately. Unless they conflict with the application purpose and / or technical solution of this application, the cited documents involved in this application are cited in their entirety and for all purposes. When cited documents are involved in this application, the definitions of relevant technical features, terms, nouns, phrases, etc. in the cited documents are also cited. When cited documents are involved in this application, the examples and preferred embodiments of the cited relevant technical features may also be incorporated into this application as references, but are limited to the ability to implement this application. It should be understood that when the cited content conflicts with the description in this application, the present application shall prevail or be adaptively amended according to the description in this application.

[0037] In traditional technologies, electron sources mainly adopt thermal emission electron sources and field emission electron sources. Thermal emission electron sources mainly use metallic materials such as tungsten filaments and lanthanum hexaboride. When heated to thousands of degrees Celsius, electrons are thermally excited and detach from the surface of the material to form vacuum electrons. The electron beam emitted by the thermal electron source can work in a poor vacuum environment, has good adaptability to the environment and good stability, but has low brightness and poor coherence. Field emission electron sources mainly use metal needle tips such as tungsten, which produce a tip discharge effect under the action of a strong electric field applied from the outside. The electron beam of the field emission electron source has high brightness and good coherence, but has high requirements for vacuum degree and is very sensitive to vibration. Whether it is a thermal emission electron source or a field emission electron source, the control of the electron emission properties is limited, and it is impossible to take into account both the performance and stability of the emitted electrons. In addition, traditional electron sources are large in size and are not suitable for integrated use.

[0038] The first aspect of the present application provides an electron multiplication source, such as Figure 1 As shown, the electron multiplication source includes:

[0039] A tubular body 10, wherein the tubular body 10 has a lumen 11;

[0040] An electron source 20, comprising an optical fiber 21 and an electron excitation layer 22, wherein the light-emitting end of the optical fiber 21 is located within the tubular cavity 11, and the electron excitation layer 22 is disposed at the light-emitting end of the optical fiber 21, and the electron excitation layer 22 is disposed on a light-emitting path of a laser emitted from the optical fiber 21, so that the electron excitation layer 22 can emit an electron beam under the excitation of the laser; the material of the electron excitation layer 22 comprises at least one of a zero-dimensional material, a one-dimensional material, and a two-dimensional material;

[0041] an anode assembly 30, the anode assembly 30 being located on the emission path of the electron beam, opposite to and spaced from the light-emitting end of the optical fiber 21;

[0042] A dynode group 40, comprising at least one dynode 41 disposed on the wall of the lumen 11, the dynode 41 being configured to generate secondary electrons after electron bombardment; each dynode 41 being located on the wall of the lumen 11 between the electron excitation layer 22 and the anode assembly 30, with the potential of the dynode group 40 increasing stepwise from the electron excitation layer 22 to the anode assembly 30; and

[0043] The power supply assembly 50 is connected to the anode assembly 30 , the electron excitation layer 22 and the dynode group 40 , respectively, and is used to provide a potential difference between the anode assembly 30 and the electron excitation layer 22 , and a potential gradient in the dynode group 40 .

[0044] In the electron multiplication source of the present application, the electron source 20 is combined with an optical fiber 21 and an electron excitation layer 22 of a low-dimensional material. Compared with the traditional electron source, it has a smaller volume and can be adapted to electron multiplier tubes of smaller size, thereby improving the integration and facilitating assembly. Moreover, the electron emission method of the present application is cold excitation by laser irradiation, which causes low damage to the equipment. The low-dimensional material has an atomic-level thickness, no dangling bonds and stable properties, which can take into account both the electron emission efficiency and stability, and thus can ensure the collision of electrons with the dynode group 40 to generate more secondary electrons, thereby having a higher multiplication effect. In addition, the switch for the electron source 20 to excite and generate electrons is controlled by a laser, which can realize ultra-high frequency electronic switching. The electron multiplication source of the present application has the characteristics of small size, high integration, good stability and high multiplication effect.

[0045] It can be understood that the optical fiber 21 includes a core for transmitting laser light and a cladding layer wrapped around the core. The refractive index of the cladding layer is lower than the refractive index of the core. Therefore, the cladding layer can be used to confine the laser light within the core for propagation. A coating layer is also provided on the outer surface of the cladding layer to protect the cladding layer and the core. The optical fiber 21 has an input end and an output end. The input end is used to couple to a laser source so that the laser light emitted by the laser source can be transmitted through the core of the optical fiber 21. Among them, the laser source can be a laser. The optical fiber 21 is the transmission medium of the laser light and the carrier of the low-dimensional material of the electron excitation layer 22. The optical fiber 21 can be a single-mode optical fiber, a multi-mode optical fiber, a polarization-maintaining optical fiber, a holey optical fiber or a multi-core optical fiber, etc.

[0046] It can be understood that the electron source 20 of the present application uses the core of the optical fiber 21 to transmit laser light, and uses the laser light to interact with the electron excitation layer 22, so that the electrons in the electron excitation layer 22 absorb the laser photons, undergo energy transitions, and escape from the electron excitation layer 22, and emit electrons outward from the light output end.

[0047] It is understood that zero-dimensional materials refer to materials whose dimensions in the three-dimensional spatial scale are at the nanoscale, such as nanoparticles, atomic clusters, and quantum dots, and are generally composed of a small number of atoms and molecules. There are many zero-dimensional carbon nanomaterials, such as carbon black, nanodiamonds, diamond color center nanofullerene C60, or carbon-coated nanometal particles. Zero-dimensional materials have typical discrete energy levels. Under the action of laser excitation, electrons are mainly excited by tunneling from discrete energy levels, so that the electron beam emitted by tunneling from the electron excitation layer 22 has the characteristics of small energy dispersion, high brightness, and high stability.

[0048] It is understood that electrons in one-dimensional materials can be transported along the linear chains of the one-dimensional material. One-dimensional materials have the characteristics of a small curvature radius (nanometer level), which can enhance the interaction between light and matter and provide a large field enhancement factor, ensuring multiphoton emission and light field emission, and are applicable to scenarios requiring a high-brightness electron source 20. For example, one-dimensional materials include nanotubes, nanorods or nanowires, nanobelts, or coaxial nanocables.

[0049] It's understood that electrons in two-dimensional materials can propagate along a two-dimensional plane. Two-dimensional materials have the characteristic of atomic layer thickness, which can range from a single atomic layer to multiple atomic layers. Laser light interacting with two-dimensional materials has little impact on the light's propagation pattern, resulting in high stability. Furthermore, the excited electrons are emitted directly without scattering within the material, ensuring the purity of the emitted electrons and an extremely narrow pulse width. Examples of two-dimensional materials include graphene, transition metal sulfides, two-dimensional perovskites, two-dimensional diamond, or boron nitride.

[0050] This application uses low-dimensional materials such as zero-dimensional materials, one-dimensional materials or two-dimensional materials as the materials of the electron excitation layer 22. The low-dimensional materials have atomic-level thickness, and back-incident electrons can be emitted without being transmitted through the body, and the electron emission efficiency is high; and the low-dimensional materials have no dangling bonds, are stable in nature and have a high melting point, are not easily damaged, and can be used in high-power excitation scenarios, with the characteristics of good stability and long service life; in addition, low-dimensional materials also have strong light-material interaction and rich electronic band gaps, so that the laser can better interact with the electron excitation layer 22 and excite the electrons in the electron excitation layer 22. These electrons are excited to escape into the vacuum and form an electron beam, and the electron beam emitted by tunneling from the electron excitation layer 22 has the characteristics of small energy dispersion, high brightness and high stability.

[0051] In some embodiments, the tube body 10 is sleeved on the optical fiber 21. In the present application, the tube body 10 is sleeved on the optical fiber 21, and the tube body 10 and the electron source 20 are directly integrated, which is small in size and easy to assemble.

[0052] Optionally, the outer diameter of the optical fiber 21 is 125 μm to 1000 μm, for example, 125 μm, 200 μm, 300 μm, 400 μm, 500 μm, 600 μm, 700 μm, 800 μm, 900 μm or 1000 μm.

[0053] In traditional technology, the multiplier tube in the electron multiplier source is large in size and easily affected by the external magnetic field, which disrupts the movement path of the electrons in the multiplier tube, thereby reducing the probability of collision between the electrons and the dynodes and affecting the stability of the multiplication. The present application combines an electron source 20 composed of an optical fiber 21 and an electron excitation layer 22, and can select the diameter of the tube cavity 11 as above, which can improve the stability of the multiplication and is less affected by the external magnetic field. Even if there is an external magnetic field, since the diameter of the tube cavity 11 is small, the change in the electron movement path is small relative to the size of the dynode 41, and the electrons can still collide with the dynode 41; and the electron multiplier source of the present application is small in size, which makes it easier to perform electromagnetic shielding operations. In addition, the electrons generated by the present application are emitted from the end of the tube cavity 11 on the order of hundreds of microns, which can achieve an ultra-high electron beam current density and can be used in fields requiring large beam electrons.

[0054] In some embodiments, the anode assembly 30 may be a ring-shaped anode or a plate-shaped anode.

[0055] In some embodiments, Figure 1 As shown, the dynode group 40 includes at least two dynodes 41 arranged at intervals, and the dynodes 41 extend along the circumference of the tubular cavity 11. The length of the dynode 41 is less than or equal to the circumference of the circumferential cross-section edge of the tubular cavity 11. The length of the dynode 41 is the size of the dynode 41 along the circumference of the tubular cavity 11.

[0056] In some embodiments, the tube body 10 having multiple dynodes 41 disposed therein can be formed by splicing multiple tube body 10 segments. For example, one dynode 41 is disposed within one tube body 10 segment, and multiple tube body 10 segments having dynodes 41 are spliced ​​together to obtain the tube body 10 having multiple dynodes 41 disposed therein.

[0057] In some embodiments, the length of the dynode 41 is 0.4 to 0.6 times the perimeter of the circumferential cross-section edge of the lumen 11. Alternatively, the length of the dynode 41 is 0.5 times the perimeter of the circumferential cross-section edge of the lumen 11.

[0058] In some embodiments, the spacing distance between adjacent dynodes 41 is 100 μm-1000 μm, for example, 100 μm, 200 μm, 300 μm, 400 μm, 500 μm, 600 μm, 700 μm, 800 μm, 900 μm or 1000 μm.

[0059] In some embodiments, the width of the dynode 41 is 100 μm to 500 μm, for example, it can be 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm or 500 μm. The width of the dynode 41 is the axial dimension of the dynode 41 along the lumen 11.

[0060] In some embodiments, the positive electrode of the power supply 51 is connected to the anode assembly 30 using a first wire 53, and the negative electrode of the power supply 51 is connected to the electron excitation layer 22 using a second wire 54; the power supply assembly 50 further includes a third wire 55, one end of the third wire 55 is connected to the first wire 53, and the other end of the third wire 55 is connected to the second wire 54;

[0061] The power supply assembly 50 also includes a plurality of resistors 52, which are spaced apart on the third wire 55. The dynodes 41 are independently connected to the third wire 55 through fourth wires 56, and the fourth wires 56 are respectively connected between adjacent resistors 52, so as to form a step-by-step increasing potential for the dynode group 40.

[0062] It is understandable that when the tube body 10 with multiple dynodes 41 disposed therein is formed by splicing multiple tube body 10 segments, before the tube body 10 segments are spliced ​​together to form the tube body 10, the fourth wire 56 is led out of the tube body 10 from the splicing point of two tube body 10 segments.

[0063] The present application sets the connection relationship between the power supply 51, the anode assembly 30, the electron excitation layer 22 and the resistor 52 as described above to achieve the potential change of the dynode 41 in the dynode group 40 and meet the corresponding electric field requirements of the dynode 41.

[0064] In some embodiments, as Figure 2 As shown, the dynode assembly 40 includes a dynode 41, which covers the cavity wall of the tube cavity 11 between the electron excitation layer 22 and the anode assembly 30. Furthermore, the dynode assembly 40 uses an electrode that fully covers the wall of the tube cavity 11, which can achieve continuous potential change, has the advantages of convenient processing and high electron multiplication efficiency.

[0065] It is understandable that the potential difference between two adjacent dynodes 41 can be adjusted according to the resistance value of the resistor 52 .

[0066] In some embodiments, the tube body 10 includes at least one of a quartz optical fiber and a sapphire optical fiber.

[0067] In the present application, the material of the tube body 10 can be the same as the coating material of the optical fiber 21, so that both the electron source 20 and the tube body 10 have a certain degree of flexibility and are easy to integrate and assemble.

[0068] In some embodiments, the material of the dynode 41 includes at least one of beryllium copper alloy, nickel silver alloy, magnesium oxide, beryllium oxide, aluminum oxide, cesium oxide, antimony oxide, and silver-plated oxide.

[0069] In some embodiments, the thickness of the dynode 41 is 100 nm to 10 μm.

[0070] In some embodiments, the electron source 20 further includes a conductive connection layer 23 disposed on the optical fiber 21 , and the conductive connection layer 23 is electrically connected to the electron excitation layer 22 .

[0071] In some embodiments, the thickness of the electron excitation layer 22 is less than or equal to 50 nm.

[0072] The second aspect of the present application provides an application of the electron multiplying source as described in the first aspect, wherein the electron multiplying source is used to prepare at least one of an electron beam exposure machine, a free electron laser, an electron beam welder, a magnetron and an X-ray generator.

[0073] The embodiments of the present application will be described in detail below with reference to the examples. It should be understood that these examples are intended to illustrate the present application only and are not intended to limit the scope of the present application. The experimental methods for which specific conditions are not specified in the following examples are preferably referred to the guidance provided in the present application, and can also be based on the experimental manuals or conventional conditions in this area, or according to the conditions recommended by the manufacturer, or with reference to experimental methods known in the art.

[0074] Example 1

[0075] Mechanically exfoliating the graphene using adhesive tape to obtain a two-dimensional graphene material layer, and transferring the two-dimensional graphene material layer to a polypropylene carbonate film for later use, wherein the two-dimensional graphene material layer includes ten single-layer graphene layers with an average diameter of 40 μm;

[0076] The laser output end of the optical fiber 21 is cut flat, and the core of the output end of the optical fiber 21 is transferred and covered with a polymer. Titanium and gold are sequentially plated on one side of the output end of the optical fiber 21, and the polymer covering the core is dissolved and removed to obtain an optical fiber 21 having a conductive connecting layer 23 arranged in a ring around the core. The optical fiber 21 is a single-mode optical fiber 21, the excitation wavelength transmitted in the optical fiber 21 is 1550 nm, the outer diameter is 125 μm, and the core diameter is 8.2 μm. The conductive connecting layer 23 includes titanium with a thickness of 5 nm and gold with a thickness of 60 nm.

[0077] Transfer the polypropylene carbonate film with the graphene two-dimensional material layer to the front of a perforated glass slide so that it is suspended and can be observed under a microscope. Attach a ring-shaped heating plate to the back, which is connected to a power supply 51. The perforated glass slide is fixed to the microscope stage, and the optical fiber 21 with the conductive connection layer 23 is fixed to the translation stage under the stage, so that the objective lens, the hole in the heating plate, the glass slide, the polypropylene carbonate film with the graphene two-dimensional material layer, and the end face of the optical fiber 21 with the conductive connection layer 23 are collinear and arranged in order from top to bottom.

[0078] Observe the positions of the two-dimensional material and the conductive connecting layer 23 under a microscope and complete horizontal alignment. Preheat and move the optical fiber 21 so that the annular conductive connecting layer 23 contacts the two-dimensional material to form Newton rings. Increase the temperature to ensure close contact between the annular conductive connecting layer 23 and the two-dimensional material. After the polypropylene carbonate film is completely melted, remove the optical fiber 21 and soak it in acetone to dissolve it, thereby obtaining the electron source 20.

[0079] A quartz capillary tube 10 is provided, having an inner diameter of 130 μm and an outer diameter of 200 μm. The tube 10 is divided into 2 mm long segments 10, and dynodes 41 are formed inside the segments 10 using magnetron sputtering. The dynodes 41 are composed of a stack of 100 nm thick gold and 1 μm thick magnesium oxide, arranged away from the cavity wall. The length of the dynode 41 is half the circumference of the inner cavity cross section, and the width is 1 mm. A fourth wire 56 is connected to the dynode 41.

[0080] Six sections of the tube body 10 with dynodes 41 formed thereon are glued and spliced ​​together. During the splicing process, the fourth wire 56 is led out from the spliced ​​portion, and the openings of adjacent dynodes 41 face each other, forming a tube body 10 with six dynodes 41 spaced apart inside, with a spacing of 400 μm.

[0081] Insert one end of the electron source 20 with the two-dimensional material, i.e., the output end of the optical fiber 21, into the tube body 10 and fix it. Set an anode assembly 30 on the side of the tube body 10 away from the electron source 20. The anode assembly 30 is an anode plate.

[0082] Provide a power supply 51 and a resistor 52, connect the positive electrode of the power supply 51 to the anode assembly 30 using a first wire 53, connect the negative electrode of the power supply 51 to the conductive connection layer 23 using a second wire 54, and the second wire 54 is grounded; connect one end of the third wire 55 to the first wire 53, connect the other end of the third wire 55 to the second wire 54, and arrange the resistors 52 at intervals on the third wire 55; then connect the fourth wire 56 between adjacent resistors 52.

[0083] The potential of the anode assembly 30 is 700 V, and the potentials of the dynodes 41 in the direction close to the anode assembly 30 are 100 V, 200 V, 300 V, 400 V, 500 V and 600 V respectively.

[0084] Example 2

[0085] The electron multiplier source is prepared according to the method of Example 1, except that the preparation process of the dynode group 40 includes:

[0086] A dynode 41 is electroplated within the 10 mm long tube 10, completely covering the wall of the lumen 11. Dynode 41 is 1 μm thick and 8 mm long, and is made of magnesium oxide. Seven resistors 52 are spaced apart on the third wire 55. The potential of the anode assembly 30 is 500 V.

[0087] In summary, the electron source 20 in the electron multiplication source of the present application utilizes a combination of optical fiber 21 and an electron excitation layer 22 made of low-dimensional material. Compared to conventional electron sources 20, this combination is smaller and can accommodate smaller electron multiplier tubes, resulting in improved integration and ease of assembly. Furthermore, the electron emission method of the present application is cold excitation via laser irradiation, which minimizes damage to the device. The low-dimensional material has atomic-level thickness, no dangling bonds, and stable properties, balancing electron emission efficiency and stability. This ensures collisions between electrons and the dynode assembly 40, generating more secondary electrons and achieving a higher multiplication effect. Furthermore, the switching of the electron source 20 to generate electrons is laser-controlled, enabling ultra-high-frequency electronic switching. The electron multiplication source of the present application features a small size, high integration, good stability, and a high multiplication effect. Furthermore, the optical fiber 21 used in the tube body 10 and the electron source of the present application both possess a certain degree of flexibility, making them easy to integrate and apply to miniaturized devices requiring large electron beam currents. Furthermore, the tube body 10 is small in size, less affected by magnetic fields, easy to integrate, and more easily subjected to electromagnetic shielding.

[0088] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0089] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and such modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present application shall be determined by the appended claims.

Claims

1. An electron multiplication source, characterized in that The electron multiplication source comprises: A tubular body, wherein the tubular body has a lumen; An electron source, the electron source comprising an optical fiber and an electron excitation layer, the light-emitting end of the optical fiber being located within the tube cavity, the electron excitation layer being disposed at the light-emitting end of the optical fiber, and the electron excitation layer being disposed on a light-emitting path of a laser emitted from the optical fiber, so that the electron excitation layer can emit an electron beam under the excitation of the laser; the material of the electron excitation layer comprising at least one of a zero-dimensional material, a one-dimensional material, and a two-dimensional material; an anode assembly, the anode assembly being located on the emission path of the electron beam, opposite to and spaced from the light-emitting end of the optical fiber; a dynode group, the dynode group including at least one dynode disposed on the lumen wall of the tube cavity, the dynode being used to generate secondary electrons after electron bombardment; each dynode is located on the lumen wall of the tube cavity between the electron excitation layer and the anode assembly, and the potential of the dynode group increases step by step from the electron excitation layer to the anode assembly; and A power supply component is connected to the anode component, the electron excitation layer and the dynode group respectively, and is used to provide a potential difference between the anode component and the electron excitation layer, and a potential gradient in the dynode group.

2. The electron multiplication source according to claim 1, wherein The tube body is sleeved on the optical fiber; Optionally, the outer diameter of the optical fiber is 125 μm to 1000 μm.

3. The electron multiplication source according to claim 1 or 2, characterized in that The dynode group includes at least two dynodes arranged at intervals, the dynodes extending along the circumference of the lumen, the length of the dynodes being less than or equal to the circumference of the edge of the circumferential section of the lumen, and the length of the dynodes being the size of the dynodes along the circumference of the lumen.

4. The electron multiplication source according to claim 3, wherein The dynode group satisfies at least one of the following conditions: (1) The length of the dynode is 0.4 to 0.6 times the circumference of the edge of the circumferential cross section of the lumen; (2) The spacing between adjacent dynodes is 100 μm to 1000 μm; (3) The width of the dynode is 100 μm to 500 μm, and the width of the dynode is the dimension of the dynode along the axial direction of the lumen.

5. The electron multiplication source according to claim 3, wherein The positive electrode of the power supply is connected to the anode assembly by a first wire, and the negative electrode of the power supply is connected to the electron excitation layer by a second wire; the power supply assembly also includes a third wire, one end of the third wire is connected to the first wire, and the other end of the third wire is connected to the second wire; The power supply component also includes a plurality of resistors, which are arranged at intervals on the third wire. Each of the dynodes is independently connected to the third wire through a fourth wire, and the fourth wire is respectively connected between adjacent resistors to form a step-by-step increasing potential for the dynode group.

6. The electron multiplication source according to claim 1 or 2, characterized in that The dynode group includes a dynode, and the dynode covers the cavity wall of the tube cavity between the electron excitation layer and the anode assembly.

7. The electron multiplication source according to claim 1 or 2, characterized in that The tube body includes at least one of a quartz optical fiber and a sapphire optical fiber.

8. The electron multiplication source according to claim 1, wherein The dynodes satisfy at least one of the following conditions: (1) The material of the dynode includes at least one of beryllium copper alloy, nickel silver alloy, magnesium oxide, beryllium oxide, aluminum oxide, cesium oxide and antimony oxide; (2) The thickness of the dynode is 100 nm to 10 μm.

9. The electron multiplication source according to claim 1 or 2, characterized in that The electron source satisfies at least one of the following conditions: (1) The electron source further includes a conductive connection layer disposed on the optical fiber, wherein the conductive connection layer is electrically connected to the electron excitation layer; (2) The thickness of the electron excitation layer is less than or equal to 50 nm.

10. Use of the electron multiplication source according to any one of claims 1 to 9, characterized in that: The electron multiplication source is used to prepare at least one of an electron beam exposure machine, a free electron laser, an electron beam welder, a magnetron and an X-ray generator.

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