Preparation method of high-quality microwave generation O-type device

Abstract

The invention discloses a preparation method of a high-quality microwave generation O-shaped device, and solves the technical problem that the waveform quality and the service life of microwaves generated by an O-shaped device prepared in the prior art are affected due to the existence of medium substances such as mechanical damage and pollutants on the surface of the O-shaped device. The method comprises the following steps: determining parameters of an O-type device according to design requirements and processing the O-type device; preparing a small sample; cleaning the small sample by adopting M0 cleaning processes, and selecting M cleaning processes with the cleaning effect reaching the standard; a plurality of split type O-shaped devices (split parts) for testing are machined, M cleaning processes are adopted for cleaning, P cleaning processes meeting cleaning indexes are obtained, and P is smaller than M; a plurality of split type O-shaped devices (integrated structures) for testing are machined, cleaning and assembly testing are conducted through P cleaning processes, the optimal cleaning process of each short section is found out, the optimal cleaning scheme of the O-shaped devices is obtained, and finally the finished O-shaped devices are obtained.

Description

TECHNICAL FIELD

[0001] The present application relates to a preparation method of a vacuum microwave device, in particular to a preparation method of a high-quality microwave generating O-type device. BACKGROUND

[0002] The microwave generating technology has a broad application prospect in scientific research and civil fields. According to the development trend of the current microwave generating technology, the microwave technology needs to be expanded to high frequency bands (millimeter wave, terahertz) while improving the output power. The O-type device belongs to an important category of microwave generating devices, which has a wide application in various fields and bands, including high frequency bands (millimeter wave, terahertz). Therefore, it is of great significance to improve the working performance and service life of the O-type device.

[0003] As a kind of vacuum microwave tube, the O-type device will inevitably cause electron emission and discharge phenomenon with the increase of the internal surface electric field strength and the deterioration of the vacuum degree in actual work, thereby affecting the waveform, width and service life of the generated microwave. The main factor causing the above problems is the surface state of the internal surface of the O-type device. In the prior art, due to mechanical processing and other reasons, there are medium substances such as mechanical damage and pollutants, impurity particles on the internal surface of the O-type device. According to the field emission theory and FN formula, these geometric feature (mechanical damage) and impurity pollutants (pollutants, impurity particles and other substances) defects become field enhancement factors, reduce the field emission threshold, induce field emission and cause vacuum breakdown, which ultimately affects the waveform quality of the generated microwave. The surface damage of the cavity wall caused by the breakdown also seriously affects the quality and service life of the O-type device.

[0004] Therefore, there is an urgent need for a preparation method of a high-quality microwave generating O-type device which can fundamentally improve the above problems. SUMMARY

[0005] The purpose of the present application is to provide a preparation method of a high-quality microwave generating O-type device, which solves the technical problems that the waveform quality and service life of the generated microwave of the O-type device prepared by the prior art are affected by the existence of mechanical damage and pollutants, impurity particles and other substances on the surface.

[0006] To achieve the above purpose, the technical solution provided by the present application is as follows:

[0007] A preparation method of a high-quality microwave generating O-type device, which is characterized by comprising the following steps:

[0008] Step 1: determining the basic parameters of the O-type device according to the design requirements and processing the O-type device; the basic parameters include material, structure, size and internal surface processing technology;

[0009] Step 2: N small samples are made according to the number of types of inner surface machining processes of O-type devices, and M0 cleaning processes are determined according to the surface state of each small sample, and then L small samples are selected from the small samples, wherein L = S x M0 + 1, and L ≤ N, and S is the number of types of inner surface machining processes.

[0010] Step 3: The small samples are cleaned by using the M0 cleaning processes, and M cleaning processes with qualified cleaning effects are selected, wherein M < M0.

[0011] Step 4: A plurality of split test O-type devices are processed according to the method of step 1, each test O-type device includes a plurality of short sections, and each short section is a cavity type structure, and each cavity type structure is processed into a split part composed of a plurality of single cavity wall inner surface structures. Then the test O-type devices are divided into a test group and a control group, and the cavity walls of each split part in the test group are cleaned by using the M cleaning processes respectively, so as to obtain P cleaning processes meeting the cleaning index, P < M.

[0012] Step 5: A plurality of split test O-type devices are processed according to the method of step 1, each test O-type device includes a plurality of short sections, each short section is a cavity type structure and is an integral structure. Then the test O-type devices are divided into a test group and a control group, and the cavity walls of each short section in the test group are sequentially cleaned by using the P cleaning processes and assembled for testing and evaluation, and the optimal cleaning process of each short section is found out, so as to obtain the optimal cleaning scheme of the O-type device.

[0013] Step 6: The O-type device processed in step 1 is cleaned according to the optimal cleaning scheme to obtain a final product, so as to complete the preparation of the high-quality microwave generating O-type device.

[0014] Further, in step 2, the small sample is a metal cylindrical structure, the material of which is the same as that of the O-type device, and the size thereof is adapted to the size requirement of the test bench. The upper surface of each small sample is consistent with the inner surface machining process of the O-type device in step 1.

[0015] Further, in step 2, the surface state of each small sample is obtained by scanning electron microscope (SEM) microscopic observation.

[0016] Further, step 3 specifically includes:

[0017] 3.1 The L small samples are divided into L-1 test samples and 1 original control sample, and the L-1 test samples are divided into S groups according to the inner surface machining process, and each test sample in each group is cleaned by using M0 cleaning processes.

[0018] 3.2 respectively on the original control sample and each cleaning test sample surface state observation and performance testing, and according to the observation and test results, select M kind of cleaning effect up to standard cleaning process, wherein M < M0.

[0019] Further, in step 3.2, the surface state observation is microscopically observed by scanning electron microscopy SEM;

[0020] The performance test is to test the field emission threshold and breakdown threshold of the cleaned test sample and the original control sample respectively by field emission experiment.

[0021] Further, step 4 is specifically:

[0022] 4.1 according to the method of step 1, Z group of split type test O type device is obtained, each group of test O type device includes M test pieces and 1 control piece, each test piece and control piece includes a plurality of short sections, each short section is a kind of cavity structure, and each cavity structure includes X single cavity wall structure split piece;

[0023] 4.2 respectively using M kind of cleaning process to clean the cavity wall of all split pieces corresponding to M test pieces;

[0024] 4.3 respectively on the cleaned split piece and the cavity wall of the split piece corresponding to the control piece, comparative observation is carried out, so as to obtain all cleaning processes meeting the cleaning index;

[0025] 4.4 according to the requirements of the range of applicable cavity type and processing cycle, the number of cleaning process types is reduced to P, wherein P < M.

[0026] Further, step 5 is specifically:

[0027] 5.1 according to the method of step 1, Z group of split type test O type device is obtained, each group of split type test O type device includes P test pieces and 1 control piece, each test piece and control piece includes a plurality of short sections, each short section is a kind of cavity structure and is an integral structure;

[0028] 5.2 select P test pieces of a short section, respectively using P kind of cleaning process to clean the cavity wall thereof;

[0029] 5.3 the test piece of the short section after cleaning is assembled into a complete device with the test piece of other short section without cleaning, and microwave generating experiment is carried out, and then according to the waveform and / or quality of the complete device generating microwave, the optimal cleaning process of the short section is found out;

[0030] 5.4 repeat steps 5.2 and 5.3 until the optimal cleaning process of all short sections is found out, so as to obtain the optimal cleaning scheme of O type device.

[0031] Compared with the prior art, the present application has the following advantages:

[0032] 1、The present application can obtain the optimal cleaning scheme of the O-type device by making small samples with the same machining process as the inner surface of the O-type device, determining the possible M0 cleaning processes according to the surface state, then screening M0 cleaning processes by cleaning the small samples, then screening the cleaning process suitable for each single cavity wall structure and the cleaning process suitable for each short section, and finally obtaining the high-quality microwave generating O-type device with the surface state and performance meeting the requirements.

[0033] 2、The preparation method of the present application greatly improves the threshold value of field electron emission of the microwave generating O-type device, thereby suppressing the emission of field electrons.

[0034] 3、The present application uses the upper surface of the small sample instead of the inner surface of the product, which is easy to process, clean and test, thereby improving the operability of the test and reducing the test cost.

[0035] 4、The cavity type structure is designed as a split type, which realizes the segmented cleaning and testing of the cavity walls at different positions of the cavity type structure, thereby improving the precision of the cleaning process screening.

[0036] 5、The cavity type structure is designed as an integrated type, and is tested one by one, thereby obtaining the single variable of each short section of the microwave generating O-type device, which lays a foundation for determining the final optimal cleaning scheme. DETAILED DESCRIPTION

[0037] Figure 1 The figure is a schematic diagram of several internal cross sections of the short section in the embodiment of the present application.

[0038] Figure 2 The figure is a schematic diagram of the surface state of the O-type device before cleaning by microscopic observation in the embodiment of the present application. Figure 1 ;

[0039] Figure 3 The figure is a schematic diagram of the surface state of the O-type device before cleaning by microscopic observation in the embodiment of the present application. Figure 2 ;

[0040] Figure 4 The figure is a schematic diagram of the multiple split type structures of each short section in the embodiment of the present application.

[0041] Figure 5 The figure is a schematic diagram of the structure of cleaning and assembling test of each short section one by one in the embodiment of the present application. DETAILED DESCRIPTION

[0042] In order to make the purposes, advantages and features of the present application more clear, the present application is further described in detail below in combination with the drawings and specific embodiments. Those skilled in the art should understand that these embodiments are only used to explain the technical principles of the present application, and the purposes are not to limit the protection scope of the present application.

[0043] High-power microwave generation technology is a hot direction at present, and at present, a vacuum microwave tube type of O-type device is mainly adopted, but the problems of continuous operation and the waveform width of generated microwaves and the long service life of the device are the biggest difficulties at present, and the main reason is that the pollutants, impurity particles and other substances existing in the inner surface of microwaves greatly induce the emission of field-induced electrons, thereby causing vacuum radio frequency breakdown, and finally affecting the waveform quality of generated microwaves. At the same time, the surface damage of the cavity wall caused by the breakdown will seriously affect the service life of the device. The particle pollutants and the sharp protrusions of the geometric morphology are the sources of the field enhancement factor in the field emission current formula, so removing the impurity pollutants attached to the surface and rounding the edges of mechanical defects can greatly increase the threshold of field-induced electron emission, thereby inhibiting electron emission. Therefore, it is necessary to improve the smoothness and cleanliness of the inner surface of the cavity wall, and a series of effective post-processing procedures need to be introduced.

[0044] Based on this, the present embodiment provides a preparation method of an O-type device for generating microwaves with high quality, comprising the following steps:

[0045] Step 1: Determine the basic parameters of the O-type device according to the design requirements and process. The basic parameters include material, structure, size and inner surface machining process. Of course, the corresponding parameters can also be pre-designed according to specific requirements.

[0046] The O-type device is a hollow tube microwave generating device with a ring structure, which is composed of multiple ring structures (i.e., composed of multiple short sections), Figure 1 The cross-sectional view of the inner cavity wall structure of each short section is shown, which can be corrugated (a), trapezoidal (b), square (c), etc., and each structure is composed of a high-frequency structure due to different specific sizes and positions. Therefore, more post-processing procedures are needed to clean and melt the sharp burrs on the surface to different degrees, and some post-processing procedures will also introduce new pollution as the solution used in the process itself is left behind while achieving the purpose of cleaning and smoothing the surface, which needs to be removed by other subsequent processes. In order to achieve a relatively ideal device working surface, a set of process combination is needed as a standard post-processing procedure suitable for the target device.

[0047] However, due to the different inner surface structures of each ring structure, the polishing difficulty of different positions is different when the O-type device mirror polishing process (one of the inner surface mechanical processing processes) is performed, resulting in slight differences in roughness at the micro level of different positions (such as the protruding and recessed parts of the slow wave structure), i.e. the roughness of scratches is different, and the residual material composition and density are also different. Some processes can achieve different effects at different positions of complex structures. Figure 2 and Figure 3 As shown in the drawings, the different structures result in different contaminant conditions of the structures themselves, the different removal difficulties result in different required suitable processes, and therefore a specific suitable process combination needs to be found for a specific structure.

[0048] Step 2: According to the number of O-type device inner surface mechanical processing processes, N small samples are prepared, and M0 cleaning processes are determined according to the surface state of each small sample, and then L small samples are selected from the small samples, wherein L = S x M0 + 1, and L ≤ N, and S is the number of inner surface mechanical processing processes.

[0049] To improve the surface performance, from the physical essence level, the field electron emission threshold and the breakdown threshold are important indicators for studying the surface breakdown performance of microwave devices. Therefore, after each process is performed on the surface of the O-type device, field emission and breakdown threshold test experiments need to be performed to evaluate the effect of this process combination, which is an important basis for selecting the process combination. In this embodiment, small samples of the same material and smaller size are used, which are metal cylindrical structures and need to meet the requirements of being placed on the test platform, and the upper surface thereof is treated by the same mechanical processing and post-processing process as the actual use device, so as to ensure that the surface state of the upper surface of the small sample is consistent with the inner surface state of the O-type device processed in step 1, i.e. the upper surface of the small sample replaces the inner surface state of the real O-type device before post-processing to a large extent.

[0050] The use of small samples has the following advantages: ① Since the size of the real O-type device is large, it cannot be matched with the field emission test platform, and therefore fine field emission test experiments cannot be performed, but small samples can be installed on the test platform for experiments. ② The size of the small sample is much smaller than that of the real O-type device, and it is easy to operate and has strong operability when performing multiple post-processing and testing. ③ Since there are many process combinations to be tried, the use of small samples instead of real O-type devices can greatly reduce the testing cost.

[0051] Afterwards, the upper surface of each small sample is microscopically observed by a scanning electron microscope (SEM) to obtain the surface state, including the geometric morphology defect condition and the type and size of the attached contaminants. Then, M0 cleaning processes are determined according to the type of surface contaminants to be removed, and L small samples are selected from the N small samples for cleaning and testing, where L = S x M0 + 1, i.e., M0 small samples are selected for each inner surface machining process, so that M0 cleaning processes can be used for cleaning for each inner surface machining process, and the cleaning effect of each cleaning process is confirmed.

[0052] Step 3: The small samples are cleaned by the M0 cleaning processes, and M cleaning processes with a standard cleaning effect are selected, where M < M0. Specifically:

[0053] 3.1 The L small samples are divided into L-1 test samples and 1 original control sample, and the L-1 test samples are divided into S groups according to the inner surface machining process, and each group of test samples is cleaned by M0 cleaning processes.

[0054] 3.2 The surface state of the original control sample and each cleaned test sample is observed and tested, and M cleaning processes with a standard cleaning effect are selected according to the observation and test results, where M < M0.

[0055] In this embodiment, the surface state observation is microscopically observed by a scanning electron microscope (SEM) to understand the removal of surface contaminants, the scratch edge, and the reduction of surface impurities of the small sample.

[0056] The performance test is an electron emission experiment on the cleaned test samples and the original control sample by a field emission experiment platform, the emission current is tested by loading voltage, and the I-V curve of each small sample is obtained, so as to determine whether the electron emission performance is inhibited, whether the emission threshold field strength is improved, and whether the breakdown threshold meets the design requirements. The breakdown threshold is determined according to the experimental phenomenon. Under the same loading speed and loading step, each small sample is only tested once. As the loading voltage continues to rise, when it reaches a certain level, the gap between the cathode and the anode emits light and makes a popping sound, and the voltage output is automatically disconnected, the circuit is protected, at this time, this phenomenon is temporarily identified as breakdown, and the voltage value at the time of breakdown is called breakdown voltage.

[0057] The M cleaning processes with a standard cleaning effect can be selected by the above method, and the following steps are performed.

[0058] Step 4: Following the method in Step 1, multiple split-type O-type devices for testing are processed. Each O-type device for testing includes multiple short sections, and each short section is a cavity structure. Each cavity structure is composed of multiple split parts with a single cavity wall structure. Then, the O-type devices for testing are divided into a test group and a control group. M cleaning processes are used to clean the cavity wall of each split part in the test group, thereby obtaining P cleaning processes that meet the cleaning index, where P < M.

[0059] Due to the varying surface state distribution at different locations in an O-type device, the surface states may differ after using the same cleaning process to treat different locations. Therefore, for a specific cavity structure, it is necessary to find a suitable process solution among several available cleaning options. The final evaluation method involves microscopic observation of the entire sidewall surface under SEM to understand the residual status of impurity particles and the morphological details of mechanical defect edges. Specifically:

[0060] 4.1 The Z groups of separate O-type test devices are processed according to the method in step 1. Each group of test O-type devices includes M test pieces and 1 control piece. Each test piece and control piece includes multiple short sections. Each short section corresponds to a cavity structure. Each cavity structure includes X separate pieces with a single cavity wall structure.

[0061] For example Figure 1 (b) The short section shown in this embodiment can be divided into the following sections based on its internal cavity structure: Figure 4 The diagram shows multiple separate components with cavity walls, namely the concentric ring structure shown in (a) and (c) and the thin-walled ring structure connected in the middle (shown in (b)). Assembling these three components together forms a microwave cavity type (a short section in a hollow tube) of an O-type device. The machining and post-processing procedures for each component are the same as those for the O-type device to be fabricated.

[0062] 4.2 The cavity walls of all the sub-components corresponding to the M test pieces were cleaned using M different cleaning processes.

[0063] 4.3 Compare and observe the cavity walls of the cleaned and control parts respectively to obtain all cleaning processes that meet the cleaning indicators.

[0064] 4.4 Based on the applicable cavity type range and processing cycle requirements, the number of cleaning processes is reduced to P types, where P < M.

[0065] The reason for using this split component in this embodiment is that after the O-type device is cleaned according to the cleaning process, it is necessary to observe the surface state of each short section cavity wall at different positions using SEM to measure its cleaning effect. Since the cavity wall surface of each short section is inside and some have curved surfaces, it is impossible to test it. Therefore, each short section is made into a split component so that its inner surface is completely exposed. This allows for direct microscopic and detailed observation of the entire surface under the SEM lens to understand the residual status of impurity particles and contaminants, as well as the morphological details of the edges of mechanical defects.

[0066] Step 5: Following the method in Step 1, multiple split-type O-type test devices are fabricated. Each test O-type device includes multiple short sections, each corresponding to a cavity structure and being an integral structure. The test O-type devices are then divided into a test group and a control group. In the test group, the cavity walls of each short section are sequentially cleaned using P different cleaning processes, and assembly tests are performed to identify the optimal cleaning process for each short section, thus obtaining the optimal cleaning scheme for the O-type devices. Specifically:

[0067] 5.1 The Z-group of separate O-type test devices are processed according to the method in step 1. Each group of separate O-type test devices includes P test pieces and 1 control piece. Each test piece and control piece includes multiple short sections. Each short section is a cavity structure and is an integral structure.

[0068] 5.2 Select P test pieces of a short section and clean their cavity walls using P different cleaning processes respectively;

[0069] 5.3 Assemble the cleaned test piece with other uncleaned test pieces into a complete device and conduct a microwave generation experiment. Then, based on the waveform and / or quality of the microwaves generated by the complete device, find the optimal cleaning process for the short section.

[0070] 5.4 Repeat steps 5.2 and 5.3 until the optimal cleaning process for all short sections is found, thus obtaining the optimal cleaning scheme for O-type devices.

[0071] Since the cleaning process obtained in step 4 is the optimal cleaning process for each component, but it does not necessarily ensure the best performance of the O-type device corresponding to the short section of the component after cleaning, the short sections need to be cleaned and then assembled with other uncleaned short sections into a complete O-type device. Afterwards, the performance of the complete O-type device is tested, and each short section is replaced and tested one by one using this method. Figure 5 As shown, the optimal cleaning process for each short section can be obtained. Since each short section corresponds to a cavity type, the optimal cleaning scheme for each cavity type can be obtained. The optimal cleaning processes for all cavity types constitute the optimal cleaning scheme for the entire O-type device.

[0072] Step 6: The O-type device processed in step 1 is cleaned according to the optimal cleaning scheme, and a final product is obtained, thereby completing the preparation of the high-quality microwave generating O-type device.

[0073] After all the cavity types are processed according to the optimal cleaning scheme, a complete set of O-type devices with optimal surface states can be obtained. According to this method, the most suitable post-processing scheme for each cavity type can be obtained, which can be considered in the subsequent design of the cavity type. The overall design of the O-type device is comprehensively considered in combination with the complexity of the post-processing process. If two adjacent cavity types can be processed using the same cleaning process, the two adjacent cavity types can be processed into one body, which will have a more positive effect on the generation and transmission of microwaves and the assembly and combination degree of the entire device during transportation.

[0074] The present application is dedicated to finding a set of optimal cleaning schemes or surface post-processing process schemes for any O-type device containing high-frequency structures composed of different cavity types, so that the surface state of each section of different structure high-frequency structure can be effectively improved, and the goal of high performance and long life of the microwave generating device is finally realized.

[0075] Although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that the technical solutions recorded in the foregoing embodiments can still be modified, or part or all of the technical features can be replaced by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the present application.

Claims

1. A method for fabricating a high-quality microwave-generated O-type device, characterized in that, Includes the following steps: Step 1: Determine the basic parameters of the O-type device according to the design requirements and process the O-type device; the basic parameters include material, structure, size and internal surface machining process; Step 2: Prepare N small samples based on the types and quantities of machining processes on the inner surface of the O-type device, and determine M0 cleaning processes based on the surface state of each small sample. Then select L from the small samples, where L = S × M0 + 1 and L ≤ N, and S is the number of types of machining processes on the inner surface. Step 3: Clean the small sample using M0 cleaning processes, and select the M cleaning processes that achieve the desired cleaning effect, where M < M0. Step 4: Following the method in Step 1, multiple split-type O-type test devices are fabricated. Each test O-type device includes multiple short sections, and each short section is a cavity structure. Each cavity structure is fabricated into a split component composed of multiple single cavity wall inner surface structures. Then, the test O-type devices are divided into a test group and a control group. M cleaning processes are used to clean the cavity wall of each split component in the test group, thereby obtaining P cleaning processes that meet the cleaning index, where P < M. Step 5: Following the method in Step 1, multiple split-type O-type test devices are processed. Each test O-type device includes multiple short sections, each of which is a cavity structure and an integral structure. Then, the test O-type devices are divided into a test group and a control group. The cavity walls of each short section in the test group are cleaned and assembled sequentially using P cleaning processes. After testing and evaluation, the optimal cleaning process for each short section is found, thus obtaining the optimal cleaning scheme for the O-type device. Step 6: Clean the O-type device processed in Step 1 according to the optimal cleaning scheme to obtain the final product, thereby completing the preparation of a high-quality microwave generating O-type device.

2. The method for fabricating a high-quality microwave-generating O-type device according to claim 1, characterized in that: In step 2, the small sample is a metal cylindrical structure, and its material is the same as that of the O-type device. Its size is adapted to the size requirements of the test bench. The upper surface of each small sample has the same machining process as the inner surface of the O-type device described in step 1.

3. The method for fabricating a high-quality microwave-generating O-type device according to claim 2, characterized in that: In step 2, the surface states of each small sample are obtained through microscopic observation using scanning electron microscopy (SEM).

4. The method for fabricating a high-quality microwave-generating O-type device according to claim 1, characterized in that, Step 3 specifically includes: 3.1 Divide L small samples into L-1 test samples and 1 original control sample. Divide the L-1 test samples into S groups according to the inner surface machining process. Each group of test samples is cleaned using M0 cleaning processes. 3.2 Surface state observation and performance testing were performed on the original control sample and each cleaned test sample. Based on the observation and test results, M cleaning processes with satisfactory cleaning effects were selected, where M < M0.

5. The method for fabricating a high-quality microwave-generating O-type device according to claim 4, characterized in that: In step 3.2, surface states are observed using a scanning electron microscope (SEM) for microscopic observation. The performance test was conducted by performing field emission experiments to test the field emission threshold and breakdown threshold of the cleaned test sample and the original control sample, respectively.

6. The method for fabricating a high-quality microwave-generating O-type device according to claim 1, characterized in that, Step 4 specifically involves: 4.1 The Z groups of separate O-type test devices are processed according to the method in step 1. Each group of test O-type devices includes M test pieces and 1 control piece. Each test piece and control piece includes multiple short sections. Each short section is a cavity structure. Each cavity structure includes X separate pieces with a single cavity wall structure. 4.2 The cavity walls of all the sub-components corresponding to the M test pieces were cleaned using M different cleaning processes; 4.3 Compare and observe the cavity walls of the cleaned and control parts respectively to obtain all cleaning processes that meet the cleaning indicators; 4.4 Based on the applicable cavity type range and processing cycle requirements, the number of cleaning processes is reduced to P types, where P < M.

7. The method for fabricating a high-quality microwave-generating O-type device according to claim 1, characterized in that, Step 5 specifically involves: 5.1 The Z groups of separate O-type test devices are processed according to the method in step 1. Each group of separate O-type test devices includes P test pieces and 1 control piece. Each test piece and control piece includes multiple short sections. Each short section is a cavity structure and is an integral structure. 5.2 Select P test pieces of a short section and clean their cavity walls using P different cleaning processes respectively; 5.3 Assemble the cleaned test piece with other uncleaned test pieces into a complete device and conduct a microwave generation experiment. Then, based on the waveform and / or quality of the microwaves generated by the complete device, find the optimal cleaning process for the short section. 5.4 Repeat steps 5.2 and 5.3 until the optimal cleaning process for all short sections is found, thus obtaining the optimal cleaning scheme for O-type devices.

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