Broadband circular polarization scattering reconfigurable array antenna based on variable capacitance diode loading

Abstract

The invention discloses a broadband circularly polarized scattering reconfigurable array antenna based on variable capacitance diode loading, and the broadband circularly polarized scattering reconfigurable array antenna is composed of a plurality of scattering reconfigurable antenna units. The scattering reconfigurable antenna unit comprises a resonance structure used for radiating or receiving signals and a feed and phase shift structure arranged on the lower surface of the resonance structure. The feed and phase shift structure comprises a broadband directional coupler and a reflection type broadband phase shifter. When the scattering reconfigurable antenna unit is in a radiation working state, the broadband directional coupler radiates energy to the resonant structure; when the scattering reconfigurable antenna unit is in a scattering working state, the broadband directional coupler transmits energy to the reflection type broadband phase shifter, and the reflection type broadband phase shifter regulates energy of secondary radiation of the reflection type broadband phase shifter according to bias voltage applied to an internal variable capacitance diode. The array antenna provided by the invention is wide in working frequency band, and the radiation performance can be ensured while the scattering characteristic is reconfigurable.

Description

Technical Field

[0001] This invention belongs to the field of antenna technology, specifically relating to a broadband circularly polarized scattering reconfigurable array antenna based on varactor diode loading. Background Technology

[0002] Once a traditional antenna is designed, its scattering characteristics remain fixed. Low scattering characteristics can be achieved within a certain angular range by adding absorbing materials and reshaping the antenna. However, with the development of new anti-stealth early warning methods such as network detection, this fixed scattering characteristic of low-scattering antennas still faces significant challenges. Therefore, researching antennas with reconfigurable scattering characteristics has become an urgent need. However, current reconfigurable scattering designs for polarized antennas suffer from low antenna radiation efficiency and narrow operating bandwidth.

[0003] Specifically, current reconfigurable scattering antennas mainly rely on loaded radio frequency switches, such as PIN diodes or microelectromechanical system (MEMS) switches. However, integrating a large number of PIN diodes and other devices not only complicates the antenna structure but also inevitably reduces the antenna's radiation efficiency, affecting its radiation performance. Furthermore, the limited states of PIN diodes restrict the controllability of the scattered beam of the antenna array. Summary of the Invention

[0004] This invention provides a broadband circularly polarized scattering reconfigurable array antenna based on varactor diode loading, which can solve the above-mentioned technical problems.

[0005] This invention provides a broadband circularly polarized scattering reconfigurable array antenna based on varactor diode loading. The broadband circularly polarized scattering reconfigurable array antenna is composed of multiple scattering reconfigurable antenna elements with identical structures. Each scattering reconfigurable antenna element includes: A resonant structure, which is used to radiate or receive signals; A power supply and phase shifting structure is disposed on the lower surface of the resonant structure. The power supply and phase shifting structure includes a broadband directional coupler and a reflective broadband phase shifter located on the same plane. The isolation terminal of the broadband directional coupler is connected to the input terminal of the reflective broadband phase shifter. When the scattering reconfigurable antenna element is in the radiating operation state, the broadband directional coupler is used to radiate energy to the resonant structure; when the scattering reconfigurable antenna element is in the scattering operation state, the broadband directional coupler is used to transmit energy to the reflective broadband phase shifter, and the reflective broadband phase shifter is used to regulate its own secondary radiated energy according to the bias voltage applied to the internal varactor diode.

[0006] The beneficial effects of the embodiments of the present invention compared with the prior art are as follows: The present invention uses a varactor diode instead of a traditional PIN diode, and adjusts the energy of the secondary radiation of the phase shifter by adjusting the bias voltage applied to the varactor diode, which enables multi-state continuous control of the scattered beam and greatly expands the working bandwidth of the antenna element; by separating the radiation and scattering paths of the antenna element through the isolation characteristics of the broadband directional coupler, it is possible to avoid the control of the scattering characteristics of the antenna element from affecting its radiation performance. Attached Figure Description

[0007] Figure 1 This is a schematic diagram of the structure of a scattering reconfigurable antenna element provided in an embodiment of the present invention; Figure 2 This is a schematic diagram of the structure of a reflective broadband phase shifter provided in an embodiment of the present invention; Figure 3 A schematic diagram of the dimensions of a reflective broadband phase shifter provided in an embodiment of the present invention; Figure 4 A schematic diagram of the structure and dimensions of an impedance transformation linear coupler provided in an embodiment of the present invention; Figure 5 This is a schematic diagram of the structure of a first reflective load provided in an embodiment of the present invention; Figure 6 This is a schematic diagram showing the structure and dimensions of a metal blind via and a dielectric substrate provided in an embodiment of the present invention; Figure 7 This is a schematic diagram illustrating a connection method for a varactor diode according to an embodiment of the present invention; Figure 8 A schematic diagram showing the dimensions of a fourth metal blind via, a metal patch, and a power supply probe provided in an embodiment of the present invention; Figure 9 A schematic diagram of a broadband circularly polarized scattering reconfigurable array antenna based on varactor diode loading, comprising multiple reconfigurable antenna elements, provided for an embodiment of the present invention; Figure 10a The figure shows the simulation results of the scattering characteristics of an antenna element at an operating frequency of 8.5 GHz, as provided in an embodiment of the present invention. Figure 10b A simulation result diagram of the scattering characteristics of an antenna element at an operating frequency of 10 Hz, provided as an embodiment of the present invention; Figure 10c A simulation result diagram of the scattering characteristics of an antenna element at an operating frequency of 11 GHz, provided for an embodiment of the present invention; Figure 11a A schematic diagram of the voltage standing wave ratio (VSWR) of a broadband circularly polarized scattering reconfigurable array antenna under different operating conditions, provided for an embodiment of the present invention; Figure 11bA schematic diagram illustrating the gain of a broadband circularly polarized scattering reconfigurable array antenna under different operating conditions, provided in an embodiment of the present invention; Figure 11c A schematic diagram showing the axial ratio of a broadband circularly polarized scattering reconfigurable array antenna under different operating conditions, provided in an embodiment of the present invention; Figure 11d The radiation pattern of a broadband circularly polarized scattering reconfigurable array antenna with an operating frequency of 8.5 GHz is provided for an embodiment of the present invention. Figure 11e A radiation pattern of a broadband circularly polarized scattering reconfigurable array antenna with an operating frequency of 10 GHz is provided for an embodiment of the present invention. Figure 11f The radiation pattern of a broadband circularly polarized scattering reconfigurable array antenna with an operating frequency of 11.5 GHz is provided for an embodiment of the present invention.

[0008] Figure label: 10: Antenna element; 1: Feeding and phase-shifting structure; 11: Broadband directional coupler; 12: Reflective broadband phase shifter; 121: Impedance-transformer linear coupler; 2: Resonant structure; 20: Connector structure; 30: Ground connector; ML1: First microstrip line; ML2: Second microstrip line; ML3: Third microstrip line; C: Capacitor; R1: First reflective load; R2: Second reflective load; L1: First inductor; L2: Second inductor; LA: First vertical arm; LB: Second vertical arm; LC: Third vertical arm Arm; LD: First horizontal arm; LE: Second horizontal arm; D1: First varactor diode; D2: Second varactor diode; SUB1: First dielectric substrate; SUB2: Second dielectric substrate; SUB3: Third dielectric substrate; SUB4: Fourth dielectric substrate; M1: Metal ground plane; M2: Feed probe; M3: First metal patch; M4: Second metal patch; VIA1: First metal blind via; VIA2: Second metal blind via; VIA3: Third metal blind via; VIA4: Fourth metal blind via. Detailed Implementation

[0009] The present invention will be further described in detail below with reference to specific embodiments, but the implementation of the present invention is not limited thereto.

[0010] Example 1 Figure 1 The diagram shown is a structural schematic of a scattering reconfigurable antenna element provided in an embodiment of the present invention. By way of example and not limitation, antenna element 10 (i.e. Figure 1 The scattering reconfigurable antenna element in the antenna may include a feeding and phase-shifting structure 1 and a resonant structure 2.

[0011] In some embodiments, the feeding and phase-shifting structure 1 may be disposed on the lower surface of the resonant structure 2; meanwhile, see also Figure 1 The power supply and phase shifting structure 1 may include a broadband directional coupler 11 and a reflective broadband phase shifter 12 located on the same plane.

[0012] For example, the isolation terminal of the broadband directional coupler 11 can be connected to the input terminal of the reflective broadband phase shifter 12.

[0013] Specifically, see Figure 2 The solid arrow in (a) indicates that when antenna element 10 is in radiating operation, energy is input from the input terminal of broadband directional coupler 11, and then radiated to resonant structure 2 through the first and second output terminals of broadband directional coupler 11; see also Figure 2 The dashed arrow in (a) indicates that when the antenna element 10 is in the scattering operation state, the incident wave passes through the broadband directional coupler 11. Half of the energy is absorbed by the load at the input port of the broadband directional coupler 11, and the other half enters the reflective broadband phase shifter 12 through its isolation port. The reflective broadband phase shifter 12 will regulate the energy of its secondary radiation to the resonant structure 2 based on the bias voltage applied to the internal varactor diode.

[0014] In one possible implementation, see Figure 2 As shown in (b) above, the broadband directional coupler 11 can be constructed from a microstrip line in an "H" shape, and it can be a 3dB directional coupler. See also... Figure 3 In (a), the input terminal can be soldered to a surface mount pad (SMP), and the output terminal can be connected to the resonant structure 2. The 3dB directional coupler has high isolation, so dynamic adjustment of the scattering performance of the antenna element will not affect the radiation performance of the antenna element 10.

[0015] For example, see Figure 3 In (b), the dimensions of the broadband directional coupler 11 can be: W4 = 0.72 mm, W5 = 0.1 mm, W6 = 1.1 mm, L2 = 5.4 mm, L3 = 1 mm, L4 = 6.86 mm, L5 = 1 mm, L6 = 1.15 mm, L7 = 3.43 mm, L8 = 2.65 mm.

[0016] In one possible implementation, see Figure 2 In (b), the reflective broadband phase shifter 12 may include a first microstrip line ML1, a capacitor C, and an impedance transformation linear coupler 121.

[0017] For example, see Figure 2In (a) and (b), the first microstrip line ML1 can be "H" shaped, with the ends of the four arms starting from the upper left corner being the first to fourth ports of the first microstrip line ML1. The first port of the first microstrip line ML1 can be used as the input terminal of the reflective broadband phase shifter 12 and connected to the isolation terminal of the broadband directional coupler 11. The second port can be connected to the capacitor C, and the third and fourth ports can be connected to the first and second input terminals of the impedance transformation linear coupler 121, respectively.

[0018] Optionally, capacitor C can be a 0201 type 5pF chip resistor.

[0019] In one example, see Figure 4 In (a), the impedance transformation linear coupler 121 may include a first reflective load R1, a second reflective load R2, a first inductor L1, a second inductor L2, and a second microstrip line ML2.

[0020] Optionally, the operating frequencies of the first inductor L1 and the second inductor L2 include the X-band, and the model number can be 0201DS-5N0XJEW.

[0021] For example, the first reflective load R1 and the second reflective load R2 have the same structure and are symmetrically arranged. The first ports of the first reflective load R1 and the second reflective load R2 can be used as the first input terminal and the second input terminal of the impedance transformation linear coupler 121, respectively. The first reflective load R1 can be connected to the first port of the second microstrip line ML2 through the first inductor L1, and the second port can be connected to the second port of the second microstrip line ML2 through the second inductor L2.

[0022] For example, the second microstrip line ML2 can be a transmission line with characteristic impedance and electrical length.

[0023] Specifically, see Figure 5 The first reflective load R1 may include a third microstrip line ML3, a first varactor diode D1, and a second varactor diode D2. The third microstrip line ML3 includes a first vertical arm LA, a second vertical arm LB, a third vertical arm LC, a first horizontal arm LD, and a second horizontal arm LE. The left and right ends of the first horizontal arm LD are connected to the lower end of the first vertical arm LA and the upper end of the second vertical arm LB, respectively. The left and right ends of the second horizontal arm LE are connected to the lower end of the second vertical arm LB and the upper end of the third vertical arm LC, respectively, forming a horizontal "U"-shaped third microstrip line ML3. The upper end of the first vertical arm LA serves as the first port of the first reflective load R1. The first varactor diode D1 is reverse-loaded on the first vertical arm LA, and the second varactor diode D2 is reverse-loaded on the lower end of the third vertical arm LC. The second horizontal arm LD is connected to the first inductor L1.

[0024] Optionally, see Figure 4In (b), the dimensions of the impedance transformation linear coupler 121 can be: W7 = 0.1 mm, L9 = 1.56 mm, L10 = 0.6 mm, L11 = 0.4 mm, L12 = 1.1 mm, L13 = 0.4 mm.

[0025] Optionally, the first varactor diode D1 and the second varactor diode D2 can be of model number MAVR-000120-1411.

[0026] The dynamic control of antenna scattering can be achieved by controlling the bias voltage state across the varactor diodes inside the first varactor diode D1, the second varactor diode D2, and the second reflective load R2.

[0027] In one possible implementation, see Figure 1 The resonant structure 2 may include a first dielectric substrate SUB1, a metal ground plane M1, a second dielectric substrate SUB2, a third dielectric substrate SUB3, and a fourth dielectric substrate SUB4, which are stacked sequentially from bottom to top.

[0028] For example, see Figure 1 The upper surface of the second dielectric substrate SUB2 is also provided with an "L"-shaped feed probe M2 and a DC bias line connected to the DC control system. Figure 2 (Not shown in the image). A first metal patch M3 is disposed on the upper surface of the third dielectric substrate SUB3, and a second metal patch M4 is disposed on the upper surface of the fourth dielectric substrate SUB4.

[0029] In one example, see Figure 6 The second dielectric substrate SUB2 may also have a first metal blind via VIA1 and a second metal blind via VIA2 penetrating the second dielectric substrate SUB2, the metal ground plane M1, and the first dielectric substrate SUB1. The first dielectric substrate SUB1 may also have a third metal blind via VIA3 penetrating the first dielectric substrate SUB1.

[0030] For example, see Figure 4 In (a), the first metal blind via VIA1 can be disposed at the output terminal in the middle of the second microstrip line ML2. The negative terminals of the varactor diodes in the first reflective load R1 and the second reflective load R2 can be connected to the DC bias line on the upper surface of the second dielectric substrate SUB2 through the second microstrip line ML2 and the first metal blind via VIA1. Then, see... Figure 7 It is connected to the positive terminal of the power supply in the DC control system via a DC bias line. See also Figure 5The third metal blind aperture VIA3 can be located at the positive terminal of the varactor diode (see the dashed semicircle at the positive terminal of the varactor diode in the figure). The first varactor diode D1, the second varactor diode D2, and the varactor diode in the second reflective load R2 can be connected to the metal ground plate M1 through the third metal blind aperture VIA3. The metal ground plate M1 is then connected to the negative terminal of the power supply in the DC control system. The DC control system controlling the power supply can apply a bias voltage to the reflective broadband phase shifter 12 through the varactor diode, thereby regulating the energy of the secondary radiation of the reflective broadband phase shifter 12 and thus reconstructing the scattering characteristics of the antenna element 10.

[0031] For example, see Figure 2 In (a), the second metal blind hole VIA2 can be disposed at the output end of the broadband directional coupler 11, and the broadband directional coupler 11 can be connected to the feed probe M2 on the upper surface of the second dielectric substrate SUB2 through the second metal blind hole VIA2.

[0032] For example, the surface of all metal blind holes can be coated with a metal layer.

[0033] Optionally, the radii of both the first metal blind via VIA1 and the second metal blind via VIA2 can be r1 = 0.2mm. The DC bias line can be a metal conductor with a line width of 0.1mm.

[0034] For example, see Figure 8 In (a) of the above, a fourth metal blind via VIA4 for preventing short circuits may also be provided on the metal floor M1. The fourth metal blind via VIA4 may be provided above the first metal blind via VIA1 / the second metal blind via VIA2.

[0035] Optionally, the radius of the fourth metal blind hole VIA4 can be either r3 = 0.7 mm or r2 = 0.4 mm.

[0036] In one example, the first to fourth dielectric substrates can all be rectangular substrates, and correspondingly, the first and second metal patches can also be rectangular patches. The first dielectric substrate SUB1 can be made of a non-metallic material with a dielectric constant of 6.15, such as Rogers; the third to fourth dielectric substrates can all be made of a non-metallic material with a dielectric constant of 2.2, such as F4B. The metal ground plane M1, the feed probe M2, the first metal patch M3, the second metal patch M4, the feed and phase shifting structure 1, and the DC bias line can all be made of copper.

[0037] Here, using dielectric materials with dielectric constants of 2.2 and 6.15 to fabricate the dielectric substrate can reduce material costs and simplify antenna design processes.

[0038] For example, any two substrates can be bonded together using a prepreg, such as Rogers RO4450F. The prepreg can have a dielectric constant of 3.5 and a loss tangent of 0.004.

[0039] For example, the first metal patch M3 and the second metal patch M4 can be formed by extending two rectangular patches, with the width of the first metal patch M3 being slightly wider than that of the second metal patch M4, in order to broaden the antenna bandwidth.

[0040] Optionally, see Figure 8 In (b), the widths W1 and W2 of the first metal patch M3 and the second metal patch M4 can be: W2 = 6mm and W1 = 7.8mm.

[0041] For example, the angle between the two metal patches included in the "L"-shaped feed probe M2 can be 90°. When the antenna element 10 is in the radiation operation state, after the energy is input through the input terminal of the feed and phase shifting structure 1, it is transmitted to the two branches of the "L"-shaped feed probe M2 with equal amplitude and 90° phase difference through the broadband directional coupler 11, and coupled to the first metal patch M3 and the second metal patch M4 to achieve circular polarization characteristics.

[0042] Optionally, see Figure 8 In (c), the dimensions of the power supply probe M2 can be: W3 = 0.8mm, L1 = 3.4mm.

[0043] For example, the side length W of the first to fourth dielectric substrates can all be 18 mm; see [link to relevant documentation]. Figure 6 The thicknesses of the first to fourth dielectric substrates are respectively: H1=2.5mm, H2=0.5mm, H3=2mm, H4=0.5mm.

[0044] Optionally, the loss tangent of the first dielectric substrate SUB1 can be 0.0025, and the loss tangent of the second to fourth dielectric substrates can all be 0.0009.

[0045] This invention replaces the traditional PIN diode with a varactor diode. By adjusting the bias voltage applied to the varactor diode, the energy of the secondary radiation from the phase shifter can be adjusted, enabling multi-state continuous control of the scattered beam and greatly expanding the operating bandwidth of the antenna element. By using the isolation characteristics of the broadband directional coupler to separate the radiation and scattering paths of the antenna element, the control of the scattering characteristics of the antenna element can be avoided from affecting its radiation performance.

[0046] Furthermore, this invention uses a varactor diode as an electronic control element, which improves response speed, performance stability, and control flexibility. Using an external DC control system reduces the complexity of the control system while allowing real-time control of the antenna's state, thus possessing practical application value. The antenna element can achieve continuous dynamic adjustment of the scattered beam from 0° to 45° in the operating frequency band (X-band).

[0047] Example 2 Based on Example 1, Figure 9 This is a schematic diagram of a broadband circularly polarized scattering reconfigurable array antenna based on varactor diode loading, which includes multiple reconfigurable antenna elements, provided as an embodiment of the present invention.

[0048] In one possible implementation, see Figure 9 The broadband circularly polarized scattering reconfigurable array antenna can be composed of multiple linear antenna arrays, each of which is composed of multiple antenna elements 10 provided in Embodiment 1.

[0049] For example, each linear antenna array may include 8 antenna elements 10, and a broadband circularly polarized scattering reconfigurable array antenna may include 8 columns of linear antenna arrays.

[0050] In one example, the broadband circularly polarized scattering reconfigurable array antenna may also include a plug-in structure 20, in which one end of a DC bias line is connected to the negative terminal of a varactor diode through a first metal blind hole VIA1, and the other end is connected to the plug-in structure 20, and then connected to the positive terminal of the power supply in the DC control system through the plug-in structure.

[0051] For example, see Figure 9 The plug-in structure can be alternately and evenly distributed on both sides of the broadband circularly polarized scattering reconfigurable array antenna.

[0052] Optionally, see Figure 9 The broadband circularly polarized scattering reconfigurable array antenna may also include a grounding plug 30, which may be located at one corner of the broadband circularly polarized scattering reconfigurable array antenna.

[0053] To better illustrate the beneficial effects of the present invention, the following simulation experiments were conducted: For example, in the simulation experiment, the commercial simulation software ANSYS HFSS was used to model and simulate the antenna element 10 in Example 1 and the broadband circularly polarized scattering reconfigurable array antenna in Example 2.

[0054] See Figures 10a-10cThe simulation results of the scattering characteristics of the antenna element 10 at three typical operating frequencies are shown. It can be seen that by controlling the state of the varactor diode loaded on the antenna element 10, the antenna element 10 provided by the present invention can achieve dynamic adjustment of the scattering characteristics in a wide frequency band.

[0055] See Figures 11a-11f The diagram shows the voltage standing wave ratio (VSWR), gain, axial ratio, and radiation pattern parameters at three typical frequencies of the broadband circularly polarized scattering reconfigurable array antenna in the operating frequency band. It can be seen that the broadband circularly polarized scattering reconfigurable array antenna provided by the present invention can maintain stable radiation performance under different scattering states.

[0056] This invention uses a varactor diode instead of a traditional PIN diode. By adjusting the bias voltage applied to the varactor diode, the energy of the secondary radiation from the phase shifter can be adjusted, enabling continuous multi-state control of the scattered beam and greatly expanding the operating bandwidth of the antenna element. By using the isolation characteristics of the broadband directional coupler to separate the radiation and scattering paths of the antenna element, the control of the scattering characteristics of the antenna element can be avoided from affecting its radiation performance.

[0057] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.

Claims

1. A broadband circularly polarized scattering reconfigurable array antenna based on varactor diode loading, characterized in that, The broadband circularly polarized scattering reconfigurable array antenna is composed of multiple scattering reconfigurable antenna units with the same structure. Each scattering reconfigurable antenna unit includes: A resonant structure for radiating or receiving signals; A feeding and phase-shifting structure disposed on the lower surface of the resonant structure. The feeding and phase-shifting structure includes a broadband directional coupler and a reflective broadband phase shifter located in the same plane. The isolation end of the broadband directional coupler is connected to the input end of the reflective broadband phase shifter; Wherein, when the scattering reconfigurable antenna unit is in the radiation operating state, the broadband directional coupler is used to radiate energy to the resonant structure; when the scattering reconfigurable antenna unit is in the scattering operating state, the broadband directional coupler is used to transmit energy to the reflective broadband phase shifter, and the reflective broadband phase shifter is used to regulate the energy of its own secondary radiation according to the bias voltage applied to the internal varactor diode.

2. The broadband circularly polarized scattering reconfigurable array antenna according to claim 1, characterized in that, The reflective broadband phase shifter includes: a first microstrip line, a capacitor, and an impedance transformation straight-line coupler; The first port of the first microstrip line serves as the input end of the reflective broadband phase shifter and is connected to the isolation end of the broadband directional coupler. The second port is connected to the capacitor, and the third and fourth ports are respectively connected to the first and second input ends of the impedance transformation straight-line coupler.

3. The broadband circularly polarized scattering reconfigurable array antenna according to claim 2, characterized in that, The impedance transformation straight-line coupler includes a first reflection load, a second reflection load, a first inductor, a second inductor, and a second microstrip line; The first port of the first reflection load serves as the first input end of the impedance transformation straight-line coupler, and the first reflection load is connected to the first port of the second microstrip line through the first inductor; The first port of the second reflection load serves as the second input end of the impedance transformation straight-line coupler, and the second reflection load is connected to the second port of the second microstrip line through the second inductor. Among them, the first reflection load and the second reflection load are symmetrically arranged and have the same structure.

4. The broadband circularly polarized scattering reconfigurable array antenna according to claim 3, characterized in that, The first reflection load includes a third microstrip line, a first varactor diode, and a second varactor diode; The third microstrip line includes a first vertical arm, a second vertical arm, a third vertical arm, a first horizontal arm, and a second horizontal arm. The left and right ends of the first horizontal arm are respectively connected to the lower end of the first vertical arm and the upper end of the second vertical arm. The left and right ends of the second horizontal arm are respectively connected to the lower end of the second vertical arm and the upper end of the third vertical arm to form the third microstrip line in the shape of a horizontal "Ji"; The upper end of the first vertical arm serves as the first port of the first reflection load. The first varactor diode is reversely loaded on the first vertical arm, the second varactor diode is reversely loaded on the lower end of the third vertical arm, and the second horizontal arm connects the first inductor.

5. The broadband circularly polarized scattering reconfigurable array antenna according to claim 4, characterized in that, The resonant structure includes a first dielectric substrate, a metal floor, a second dielectric substrate, a third dielectric substrate, and a fourth dielectric substrate stacked in sequence from bottom to top; A "L"-shaped feeding probe and a DC bias line are arranged on the upper surface of the second dielectric substrate. A first metal patch and a second metal patch are respectively arranged on the upper surfaces of the third dielectric substrate and the fourth dielectric substrate.

6. The broadband circularly polarized scattering reconfigurable array antenna according to claim 5, characterized in that, The second dielectric substrate is provided with a first metal blind via and a second metal blind via penetrating the second dielectric substrate, the metal ground plane and the first dielectric substrate, and the first dielectric substrate is provided with a third metal blind via penetrating the first dielectric substrate. The negative terminals of the first varactor diode and the second varactor diode are connected to the DC bias line through the first metal blind via, and the positive terminals are connected to the metal ground plane through the third metal blind via; the output terminal of the broadband directional coupler is connected to the feed probe through the second metal blind via.

7. The broadband circularly polarized scattering reconfigurable array antenna according to claim 6, characterized in that, The metal ground plane is connected to the negative terminal of the power supply, and the DC bias line is connected to the positive terminal of the power supply. The DC control system that controls the power supply applies a bias voltage to the reflective broadband phase shifter through a varactor diode, thereby regulating the energy of the secondary radiation from the reflective broadband phase shifter to reconstruct the scattering characteristics of the scattering reconfigurable antenna element.

8. The broadband circularly polarized scattering reconfigurable array antenna according to claim 7, characterized in that, The broadband circularly polarized scattering reconfigurable array antenna includes a multi-column linear antenna array and multiple plug-in structures, with each column of the linear antenna array consisting of multiple reconfigurable antenna elements; The plug-in structure is alternately distributed at both ends of the broadband circularly polarized scattering reconfigurable array antenna; the DC bias line of each reconfigurable antenna element inside the linear antenna array is connected to the plug-in structure and connected to the DC control system through the plug-in structure.

9. The broadband circularly polarized scattering reconfigurable array antenna according to claim 3, characterized in that, The operating frequencies of the first inductor and the second inductor include the X-band.

10. The broadband circularly polarized scattering reconfigurable array antenna according to claim 1, characterized in that, The broadband directional coupler is a 3dB directional coupler.

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