Data read-write method and device based on field-free flipping magnetic tunnel junction device structure

Abstract

The invention relates to a data read-write method and device based on a field-free flipping magnetic tunnel junction device structure, and the method comprises the steps: a heavy metal layer, a free layer and an oxide layer are expanded on the basis of a conventional magnetic tunnel junction, and a control side structure composed of an electrode layer is constructed on the basis; the reading side framework is composed of a reference ferromagnetic layer, a pinning layer and an electrode layer; when the information is written, the auxiliary voltage is applied to the current of the heavy metal layer of the control side framework to complete field-free overturning, so that the information is written; when information is read, the state of the magnetic moment of the free layer is read through the reading side framework according to the magnitude of current. Therefore, the problems that in a magnetic tunnel junction of a traditional voltage-controlled anisotropy design, a voltage signal is directly applied to an oxide layer through a reading electrode of the magnetic tunnel junction, spin-transfer torque current is generated, and the control effect of voltage-controlled anisotropy is weakened are solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of spin electronics and magnetic electronic devices, in particular to a data read-write method and device based on a field-free flipping magnetic tunnel junction device structure. BACKGROUND

[0002] In modern computer systems, non-volatile storage plays an indispensable role because they can store information for a long time without the input of external power supply. Magnetic storage such as hard disk drives and magnetic tapes dominate the market of secondary non-volatile storage due to their high capacity and low cost. However, compared with widely used dynamic random access memory (DRAM), the read-write speed of magnetic storage is very slow (DRAM is about 100 ns, while the traditional magnetic storage is about 10 ms), and due to this huge speed gap, the exchange of information between fast computing units and slow computing units causes huge energy loss and time delay. In order to alleviate this problem, the development and use of new high-speed non-volatile storage have become a research hotspot.

[0003] The sandwich structure of ferromagnetic layer-oxide layer-ferromagnetic layer of magnetic tunnel junction (MTJ) stores information in the magnetic moment of the ferromagnetic layer, and the relative orientation of the magnetic moments of the two ferromagnetic layers determines the resistance state of the magnetic tunnel junction. Magnetic random access memory (MRAM) based on magnetic tunnel junction is being used for the development of embedded and independent applications due to its high stability and ultra-fast read-write speed (1 ns).

[0004] The traditional two-terminal spin transfer torque effect magnetic tunnel junction device shares one channel for reading and writing, and the current directly passes through the three-layer structure of ferromagnetic layer-oxide layer-ferromagnetic layer, which on the one hand is easy to break down the magnetic tunnel junction and cause functional failure, and on the other hand the thermal effect of large current is also not conducive to the further integration of the magnetic tunnel junction. The three-terminal spin orbit torque (SOT) effect magnetic tunnel junction realizes the separation of reading and writing, and the structure adds a heavy metal layer below the ferromagnetic layer-oxide layer-ferromagnetic layer as a current writing channel, which improves the service life of the magnetic tunnel junction.

[0005] However, the spin orbit torque effect magnetic tunnel junction needs to introduce an external magnetic field to break the symmetry of the structure, and the existing technology mainly focuses on the innovation of materials, such as using IrMn material to provide exchange bias, manufacturing a wedge-shaped oxide layer to realize non-uniform vertical anisotropy, or using the interlayer exchange coupling of the Ru layer to break the symmetry, which has a very high requirement on the manufacturing process, and it is difficult to ensure the stability during the device manufacturing process, which needs to be solved urgently. SUMMARY

[0006] The application provides a data read-write method and device based on a field-free flipping magnetic tunnel junction device structure, to solve the problem that in a conventional voltage-controlled anisotropy designed magnetic tunnel junction, a voltage signal is directly applied on an oxide layer through a read electrode of the magnetic tunnel junction, generating a spin transfer torque (STT) current, which weakens the control effect of the voltage-controlled anisotropy.

[0007] The first aspect of the application provides a data read-write method based on a field-free flipping magnetic tunnel junction device structure, comprising the following steps: based on a pre-constructed common drive side architecture, a control side architecture, a read side architecture and a plurality of control MOS tubes, constructing at least one magnetic tunnel junction, and constructing a magnetic tunnel junction array according to the at least one magnetic tunnel junction and a preset arrangement rule; selecting a target magnetic tunnel junction in the magnetic tunnel junction array through a preset row address selection line, and obtaining a write spin orbit torque current, a voltage-controlled anisotropy voltage and a read current corresponding to the target magnetic tunnel junction by using a preset column address selection line; controlling the oxide layer in the common drive side architecture to produce a voltage-controlled anisotropy effect through the voltage-controlled anisotropy voltage, and applying the write spin orbit torque current to the free layer in the common drive side architecture based on the voltage-controlled anisotropy effect and a preset local voltage-controlled anisotropy combination interface effect, to write target data into the free layer, and reading the target data by using a reference ferromagnetic layer, the oxide layer and the free layer in the read side architecture.

[0008] Optionally, in an embodiment of the application, the constructing at least one magnetic tunnel junction based on the pre-constructed common drive side architecture, the control side architecture, the read side architecture and the plurality of control MOS tubes, and constructing a magnetic tunnel junction array according to the at least one magnetic tunnel junction and a preset arrangement rule comprises: performing a bottom-up stacking operation on a preset heavy metal layer, the free layer and the oxide layer to construct the common drive side architecture, and stacking a voltage-controlled anisotropy electrode layer on one side of the oxide layer to construct the control side architecture; stacking the reference ferromagnetic layer, a preset pinning layer and an electrode layer on the other side of the oxide layer to construct the read side architecture.

[0009] Optionally, in an embodiment of the present application, the target magnetic tunnel junction in the magnetic tunnel junction array is selected by a preset row address selection line, and the write spin orbit torque current, the voltage-controlled anisotropy voltage and the read current corresponding to the target magnetic tunnel junction are obtained by a preset column address selection line, including: connecting the gate of each control MOS transistor corresponding to each magnetic tunnel junction in the magnetic tunnel junction array to a row address selection line, and configuring each control MOS transistor in a cutoff region or a variable resistance region to disconnect or select the target magnetic tunnel junction; obtaining the write spin orbit torque current, the voltage-controlled anisotropy voltage and the read current through the column address selection line of the target magnetic tunnel junction.

[0010] Optionally, in an embodiment of the present application, the voltage-controlled anisotropy effect is generated by the oxide layer in the common drive side architecture under the control of the voltage-controlled anisotropy voltage, and the write spin orbit torque current is applied to the free layer in the common drive side architecture based on the voltage-controlled anisotropy effect and a preset local voltage-controlled anisotropy combination interface effect, so as to write target data into the free layer, and the target data is read by using the reference ferromagnetic layer, the oxide layer and the free layer in the read side architecture, including: based on a preset spin orbit coupling effect, a preset heavy metal layer generates the write spin orbit torque current; the voltage-controlled anisotropy voltage is applied to the free layer through a control side voltage-controlled anisotropy electrode port in the control side architecture, so that the free layer is flipped based on the write spin orbit torque current, the voltage-controlled anisotropy voltage and a preset local voltage-controlled anisotropy combination interface effect, so as to write the target data into the free layer of the common drive side architecture; based on the reference ferromagnetic layer in the read side architecture, the oxide layer and the free layer in the common drive side architecture, a read side magnetic tunnel junction architecture is constructed; based on the read current, resistance information corresponding to the read side magnetic tunnel junction architecture is obtained through a corresponding read side magnetic tunnel junction port of the read side magnetic tunnel junction architecture and a corresponding port in the heavy metal layer, so as to read the target data according to the resistance information.

[0011] A second aspect of this application provides a data read / write device based on a field-free flip magnetic tunnel junction (MTJ) device structure, comprising: a construction module, configured to construct at least one MTJ based on a pre-constructed shared drive-side architecture, control-side architecture, read-side architecture, and multiple control MOS transistors, and to construct an MTJ array according to the at least one MTJ and a preset arrangement rule; a selection module, configured to select a target MTJ in the MTJ array through a preset row address selection line, and to obtain the write spin-orbit moment current, voltage-controlled anisotropy (VCA) voltage, and read current corresponding to the target MTJ using a preset column address selection line; and a read / write module, configured to control the oxide layer in the shared drive-side architecture to generate a VCA effect through the VCA voltage, and to apply the write spin-orbit moment current to the free layer in the shared drive-side architecture based on the VCA effect and a preset local VCA combination interface effect, so as to write target data into the free layer, and to read the target data using a reference ferromagnetic layer, the oxide layer, and the free layer in the read-side architecture.

[0012] Optionally, in one embodiment of this application, the building module includes: a first stacking unit, used to perform a bottom-up stacking operation on a preset heavy metal layer, the free layer and the oxide layer to build the common driving side architecture, and to stack a voltage-controlled anisotropic electrode layer on one side of the oxide layer to build the control side architecture; and a second stacking unit, used to stack the reference ferromagnetic layer, the preset pinning layer and the electrode layer on the other side of the oxide layer to build the read-side architecture.

[0013] Optionally, in one embodiment of this application, the gating module includes: a configuration unit, configured to connect the gate of each control MOS transistor corresponding to each magnetic tunnel junction in the magnetic tunnel junction array to the row address selection line, and configure each control MOS transistor in the cutoff region or the variable resistor region respectively, so as to disconnect or select the target magnetic tunnel junction; and an acquisition unit, configured to acquire the write spin-orbit moment current, the voltage-controlled anisotropy voltage and the read current respectively through the column address selection line of the target magnetic tunnel junction.

[0014] Optionally, in one embodiment of this application, the read / write module includes: a generation unit, configured to generate the write spin-orbit moment current in a preset heavy metal layer based on a preset spin-orbit coupling effect; a write unit, configured to apply the voltage-controlled anisotropy voltage to the free layer through the control-side voltage-controlled anisotropy electrode port in the control-side architecture, so that the free layer flips based on the write spin-orbit moment current, the voltage-controlled anisotropy voltage, and a preset local voltage-controlled anisotropy bonding interface effect, thereby writing the target data into the free layer of the common drive-side architecture; a building unit, configured to construct a read-side magnetic tunnel junction architecture based on the reference ferromagnetic layer in the read-side architecture, the oxide layer in the common drive-side architecture, and the free layer; and a read unit, configured to obtain the resistance information corresponding to the read-side magnetic tunnel junction architecture through the read-side magnetic tunnel junction port corresponding to the read-side magnetic tunnel junction architecture and the corresponding port in the heavy metal layer based on the read current, so as to read the target data according to the resistance information.

[0015] A third aspect of this application provides an electronic device, including: a memory, a processor, and a computer program stored in the memory and executable on the processor. The processor executes the program to implement the data read / write method based on a field-free flip magnetic tunnel junction device structure as described in the above embodiments.

[0016] A fourth aspect of this application provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the data read / write method based on a field-free flip magnetic tunnel junction device structure as described above.

[0017] A fifth aspect of this application provides a computer program product, including a computer program that is executed to implement the above-described data read / write method based on a field-free flip magnetic tunnel junction device structure.

[0018] Therefore, the embodiments of this application have the following beneficial effects:

[0019] The embodiments of this application can construct at least one magnetic tunnel junction (MTJ) based on a pre-built shared drive-side architecture, control-side architecture, read-side architecture, and multiple control MOS transistors, and construct an MTJ array according to at least one MTJ and a preset arrangement rule; select the target MTJ in the MTJ array through a preset row address selection line, and obtain the write spin-orbit moment current, voltage-controlled anisotropy voltage, and read current corresponding to the target MTJ using a preset column address selection line; control the oxide layer in the shared drive-side architecture to generate a voltage-controlled anisotropy effect through the voltage-controlled anisotropy voltage, and apply a write spin-orbit moment current to the free layer in the shared drive-side architecture based on the voltage-controlled anisotropy effect and a preset local voltage-controlled anisotropy combined with the interface effect, so as to write the target data into the free layer, and read the target data using the reference ferromagnetic layer, oxide layer, and free layer in the read-side architecture. This application eliminates the need for permanent magnets providing an external magnetic field in traditional spin-orbit-moment effect magnetic tunnel junctions (MEJs). It enables the use of CMOS-compatible MEJ materials without introducing additional magnetic materials, thereby achieving field-free switching of the MEJ through structural design improvements. This solves the problems encountered in traditional voltage-controlled anisotropic MEJ designs, where the voltage signal is directly applied to the oxide layer through the MEJ's readout electrode, generating a spin-transfer torque current that weakens the control effect of voltage-controlled anisotropy.

[0020] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0021] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein:

[0022] Figure 1 This is a flowchart illustrating a data read / write method based on a field-free flip magnetic tunnel junction device structure according to an embodiment of this application.

[0023] Figure 2 A schematic diagram of a field-free flip magnetic tunnel junction device is provided as an embodiment of this application;

[0024] Figure 3 A schematic diagram of a magnetic tunnel junction matrix array is provided as an embodiment of this application;

[0025] Figure 4 A schematic diagram of the change in free layer magnetic moment is provided as an embodiment of this application;

[0026] Figure 5 A schematic diagram of voltage, current, and magnetic moment logic control is provided as an embodiment of this application;

[0027] Figure 6 This is an example diagram of a data read / write device based on a field-free flip magnetic tunnel junction device structure according to an embodiment of this application;

[0028] Figure 7 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application.

[0029] Among them, 10-data read / write device based on field-free flip magnetic tunnel junction device structure; 100-construction module, 200-gating module, 300-read / write module; 701-memory, 702-processor, 703-communication interface. Detailed Implementation

[0030] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application.

[0031] The following describes a data read / write method and apparatus based on a field-free flip magnetic tunnel junction device structure according to embodiments of this application, with reference to the accompanying drawings. Addressing the problems mentioned in the background art, this application provides a data read / write method based on a field-free flip magnetic tunnel junction device structure. In this method, at least one magnetic tunnel junction is constructed based on a pre-built common drive-side architecture, control-side architecture, read-side architecture, and multiple control MOS transistors. A magnetic tunnel junction array is constructed according to the at least one magnetic tunnel junction and a preset arrangement rule. A target magnetic tunnel junction in the magnetic tunnel junction array is selected using a preset row address selection line, and the write spin-orbit moment current, voltage-controlled anisotropy voltage, and read current corresponding to the target magnetic tunnel junction are obtained using a preset column address selection line. The voltage-controlled anisotropy voltage controls the oxide layer in the common drive-side architecture to generate a voltage-controlled anisotropy effect. Based on the voltage-controlled anisotropy effect and a preset local voltage-controlled anisotropy combined with the interface effect, a write spin-orbit moment current is applied to the free layer in the common drive-side architecture to write the target data into the free layer. The target data is read using the reference ferromagnetic layer, oxide layer, and free layer in the read-side architecture. This application eliminates the need for permanent magnets providing an external magnetic field in traditional spin-orbit-moment effect magnetic tunnel junctions (MEJs). It enables the use of CMOS-compatible MEJ materials without introducing additional magnetic materials, thereby achieving field-free switching of the MEJ through structural design improvements. This solves the problems encountered in traditional voltage-controlled anisotropic MEJ designs, where the voltage signal is directly applied to the oxide layer through the MEJ's readout electrode, generating a spin-transfer torque current that weakens the control effect of voltage-controlled anisotropy.

[0032] Specifically, Figure 1This is a flowchart illustrating a data read / write method based on a field-free flip magnetic tunnel junction device structure, as provided in an embodiment of this application.

[0033] like Figure 1 As shown, the data read / write method based on the field-free flip magnetic tunnel junction device structure includes the following steps:

[0034] In step S101, at least one magnetic tunnel junction is constructed based on the pre-built shared drive-side architecture, control-side architecture, read-side architecture and multiple control MOS transistors, and a magnetic tunnel junction array is constructed according to at least one magnetic tunnel junction and a preset arrangement rule.

[0035] The basic structure of the magnetic tunnel junction in this embodiment is mainly divided into three parts: the bottom common drive part (i.e., the common drive side architecture), the top control part (i.e., the control side architecture), and the read part (i.e., the read side architecture). In addition, each magnetic tunnel junction in this embodiment is equipped with three control MOS transistors, and can form a magnetic tunnel junction array through magnetic tunnel junctions arranged in a regular matrix.

[0036] Optionally, in one embodiment of this application, at least one magnetic tunnel junction is constructed based on a pre-built common driving-side architecture, control-side architecture, read-side architecture, and multiple control MOS transistors, and a magnetic tunnel junction array is constructed according to at least one magnetic tunnel junction and a preset arrangement rule, including: performing a bottom-up stacking operation on a preset heavy metal layer, free layer, and oxide layer to construct a common driving-side architecture; stacking a voltage-controlled anisotropic electrode layer on one side of the oxide layer to construct a control-side architecture; and stacking a reference ferromagnetic layer, a preset pinning layer, and an electrode layer on the other side of the oxide layer to construct a read-side architecture.

[0037] It should be noted that, in the embodiments of this application, the common driving part stacked structure from bottom to top consists of an extended heavy metal layer (i.e., heavy metal layer), an extended free ferromagnetic layer (i.e., free layer), and an extended oxide layer (i.e., oxide layer); the control part has a voltage-controlled anisotropic electrode layer stacked on one side of the extended oxide layer to assist in control, such as... Figure 2 As shown; the read section stacks a reference ferromagnetic layer, a pinning layer and an electrode layer on the other side, forming a conventional magnetic tunnel junction structure (i.e., read-side architecture).

[0038] In this embodiment, the heavy metal layer is a conductive material with a high spin Hall angle (conversion efficiency between charge current and spin current), including heavy metals (such as W, Pt, etc.), with a typical thickness of 3-5 nm; the magnetic materials of the free ferromagnetic layer and the reference ferromagnetic layer are such as CoFeB, Co, etc., with a typical thickness of 1-2 nm; for the oxide layer, metal oxide materials such as MgO, Al2O3, etc. can be selected, with a typical thickness of 0.5-3 nm; in addition, the pinning layer can be an antiferromagnetic material such as PtMn, etc., to fix the spin direction of the reference ferromagnetic layer.

[0039] It is understood that the field-free flipping method of the magnetic tunnel junction in this application embodiment does not introduce additional materials, maintains the CMOS compatibility of traditional SOT magnetic tunnel junction materials, and has broad application prospects.

[0040] Therefore, in the magnetic tunnel junction array of the embodiments of this application, the magnetic tunnel junction matrix arrangement includes each magnetic tunnel junction having an extended heavy metal layer and a free ferromagnetic layer on the basic structure of a conventional spin-orbit magnetic tunnel junction. On this basis, a control part composed of an electrode layer and a readout part composed of a reference ferromagnetic layer, a pinning layer and an electrode layer are constructed on a horizontal structure, thereby providing reliable hardware support for realizing field-free flipping of the magnetic tunnel junction.

[0041] In step S102, the target magnetic tunnel junction in the magnetic tunnel junction array is selected by the preset row address selection line, and the write spin-orbit moment current, voltage-controlled anisotropic voltage and read current corresponding to the target magnetic tunnel junction are obtained by the preset column address selection line.

[0042] Furthermore, the embodiments of this application also require magnetic tunnel junction array arrangement and row and column line selection analysis processing. Each magnetic tunnel junction is connected to row address selection lines and column address selection lines. The operation of a single magnetic tunnel junction is completed by configuring row and column addresses. In addition, in the embodiments of this application, the row address selection line controls whether a row of magnetic tunnel junctions is connected to an external driver (i.e., selects the target magnetic tunnel junction in the magnetic tunnel junction array) through a MOS transistor. The column address selection line is connected to the external driver to provide write current (i.e., write spin-orbit torque current), auxiliary voltage (i.e., voltage-controlled anisotropic voltage) and read current, so that the read and write process of a single magnetic tunnel junction is completed when the magnetic tunnel junction is connected and the external driver is effective.

[0043] Optionally, in one embodiment of this application, selecting a target magnetic tunnel junction in the magnetic tunnel junction array through a preset row address selection line, and obtaining the write spin-orbit moment current, voltage-controlled anisotropy voltage, and read current corresponding to the target magnetic tunnel junction using a preset column address selection line, includes: connecting the gate of each control MOS transistor corresponding to each magnetic tunnel junction in the magnetic tunnel junction array to the row address selection line, and configuring each control MOS transistor in the cutoff region or variable resistor region respectively to disconnect or select the target magnetic tunnel junction; obtaining the write spin-orbit moment current, voltage-controlled anisotropy voltage, and read current respectively through the column address selection line of the target magnetic tunnel junction.

[0044] In actual implementation, each magnetic tunnel junction (MTJ) in this embodiment can be configured as follows: the row address selection line controls the selection of the ports of the row-arranged magnetic tunnel junctions to select the target magnetic tunnel junction in the magnetic tunnel junction array; the column address selection line controls the voltage and current signals input to the column-arranged magnetic tunnel junctions, thereby realizing the reading and writing of the magnetic tunnel junction array through the coordination of row and column selection.

[0045] Furthermore, the gate of the MOS transistor in each magnetic tunnel junction is connected to the row address selection line, and the selection of the magnetic tunnel junction row is controlled by configuring the MOS transistor in the cutoff region and the variable resistance region; furthermore, in the embodiments of this application, each magnetic tunnel junction in the magnetic tunnel junction array is additionally provided with three column address selection lines to correspond to the write spin orbit moment (SOT) current, voltage-controlled anisotropy voltage and read current of the magnetic tunnel junction, respectively.

[0046] In step S103, the oxide layer in the common drive-side architecture is controlled by voltage-controlled anisotropy to generate a voltage-controlled anisotropy effect. Based on the voltage-controlled anisotropy effect and the preset local voltage-controlled anisotropy combined with the interface effect, a write spin-orbit moment current is applied to the free layer in the common drive-side architecture to write the target data into the free layer. The target data is then read using the reference ferromagnetic layer, oxide layer and free layer in the read-side architecture.

[0047] Subsequently, when writing information (i.e. target data) into the tunnel junction foundation structure by writing the heavy metal layer current, the embodiments of this application can apply an auxiliary voltage to the control part electrode. The auxiliary voltage acts on the free ferromagnetic layer under the control part. Under the action of the auxiliary voltage, the control part generates a voltage-controlled anisotropy effect, which assists the writing current applied to the heavy metal layer, causing the free layer to flip, thereby writing information into the free layer.

[0048] Furthermore, embodiments of this application can utilize the reference ferromagnetic layer, oxide layer, and free layer in the read-side architecture to construct a conventional magnetic tunnel junction structure on the read-side, thereby enabling information to be read out through the resistance of the conventional magnetic tunnel junction structure on the read-side.

[0049] Therefore, in the embodiments of this application, when writing the tunnel junction basic structure through the writing current of the heavy metal layer, an auxiliary voltage is applied to the side top electrode, which acts on the free ferromagnetic layer. Under the action of voltage-controlled anisotropy, the symmetry of the free ferromagnetic layer is broken, thereby assisting the spin orbit moment (SOT) current to complete the field-free flip.

[0050] Optionally, in one embodiment of this application, a voltage-controlled anisotropy effect is generated in the oxide layer of the shared drive-side architecture by controlling the voltage-controlled anisotropy voltage. Based on the voltage-controlled anisotropy effect and a preset local voltage-controlled anisotropy combined with the interface effect, a write spin-orbit moment current is applied to the free layer in the shared drive-side architecture to write the target data into the free layer. The target data is then read using the reference ferromagnetic layer, oxide layer, and free layer in the read-side architecture. This includes: generating a write spin-orbit moment current in a preset heavy metal layer based on a preset spin-orbit coupling effect; and controlling the voltage-controlled anisotropy current in the control-side architecture. A voltage-controlled anisotropic voltage is applied to the free layer at the terminal. Based on the write spin-orbit moment current, the voltage-controlled anisotropic voltage, and the preset local voltage-controlled anisotropic interface effect, the free layer is flipped, so that the target data is written into the free layer of the common drive-side architecture. Based on the reference ferromagnetic layer in the read-side architecture, the oxide layer in the common drive-side architecture, and the free layer, a read-side magnetic tunnel junction architecture is constructed. Based on the read current, the resistance information corresponding to the read-side magnetic tunnel junction architecture is obtained through the read-side magnetic tunnel junction port and the corresponding port in the heavy metal layer, so as to read the target data according to the resistance information.

[0051] It should be noted that the external electrical characteristics of the magnetic tunnel junction are manifested by four ports: two ports T1 and T2 on the bottom heavy metal layer, a conventional magnetic tunnel junction port T3 on the read side, and a voltage-controlled anisotropic electrode port T4 on the control side. The magnetic tunnel junction ports are configured such that: during writing, the bottom ports T1 and T2 carry the spin-orbit moment (SOT) current, and the top port T4 on the control side assists the voltage-controlled anisotropic voltage; during reading, the read current passes through ports T3 and T2, and the read magnetic tunnel junction MTJ resistor is read.

[0052] Furthermore, the magnetic tunnel junction provided in this application mainly includes a common driving part, a spin-orbit moment current driving part, a basic structure of the read-side magnetic tunnel junction, and a top electrode arranged above the extended oxide layer on the control side. The magnetic tunnel junction is configured such that: during writing, the spin-orbit moment current (SOT) of the bottom heavy metal layer is assisted by the voltage-controlled anisotropic voltage of the top electrode on the control side to complete the writing of information; during reading, the information is read out by the resistance of the conventional magnetic tunnel junction (MTJ) structure on the read side.

[0053] In the specific implementation process, on the one hand, when the charge current flows through the bottom heavy metal layer, due to the spin-orbit coupling effect, a spin current is generated that flows into the free ferromagnetic layer and whose spin direction is in the horizontal plane perpendicular to the direction of the charge current; on the other hand, the DMI (Dzyaloshinsky-Moriya, locally pressure-controlled anisotropic interface) effect between the heavy metal layer and the free ferromagnetic layer makes the unit magnetic moment of the free layer always tend to be arranged perpendicularly to each other. In this way, the magnetic moments of the free ferromagnetic layer are vertically arranged in the absence of current and curled up in the presence of current, providing asymmetry for field-free reversal.

[0054] For the control-side auxiliary electrode, under the action of the voltage-controlled anisotropic electrode layer auxiliary voltage, the extended oxide layer under the control side generates a voltage-controlled anisotropic effect, making the vertical anisotropy of the free layer control part different from the vertical anisotropy of the free layer read part; under the combined action of the DMI effect, the symmetry is broken, allowing the free layer to complete the flip of the free layer magnetic moment without an external magnetic field, so as to write information to the free layer.

[0055] In the embodiments of this application, the working principle of the read-side readout electrode is as follows: after the information is written, the information is read out through the conventional magnetic tunnel junction structure composed of the reference ferromagnetic layer in the read part, the oxide layer of the common driving part, and the free ferromagnetic layer; in actual execution, under the same voltage, if the directions of the spin magnetic moments of the free layer and the reference layer are the same, it exhibits a small resistance and a large current; if the directions of the spin magnetic moments of the free layer and the reference layer are opposite, it exhibits a tunneling magnetoresistance effect with a large resistance and a small current.

[0056] In summary, the embodiments of this application extend the oxide layer and free layer, add control electrodes, and add additional voltage-controlled anisotropy auxiliary electrodes, thereby achieving the separation of voltage-controlled anisotropy and tunneling magnetoresistance effect, and achieving the overall coordination of voltage-controlled anisotropy and tunneling magnetoresistance effect. In addition, the magnetic moment of the free ferromagnetic layer of the magnetic tunnel junction in the embodiments of this application can remain in a steady state under the applied voltage and current, so that the structure does not require overly precise time control during operation, increasing the robustness of the magnetic tunnel junction. Moreover, the design of the read-write separation circuit makes the read and write processes of the circuit completely independent, eliminating mutual interference to a certain extent and improving the reliability of the overall design.

[0057] The functional execution logic of the data read / write method based on the field-free flip magnetic tunnel junction device structure of this application is described below through a specific embodiment and in conjunction with the accompanying drawings.

[0058] Figure 3 This is a schematic diagram of a magnetic tunnel junction matrix array. The basic unit for information storage is as follows: Figure 2The extended magnetic tunnel junction structure shown uses a row address selection line to control the switching of the MOSFET, further controlling the selection of the voltage and current paths. The column address selection line connects to the driver, controlling the read and write operations of the magnetic tunnel junction. Only magnetic tunnel junctions that simultaneously satisfy row and column address selection can be operated. In this embodiment, each magnetic tunnel junction can be configured to: when the MOSFET connection voltage and current path is enabled via the row address selection line, control the application process of the SOT current of the spin orbit moment and the voltage-controlled anisotropic voltage to complete the operation of a single magnetic tunnel junction.

[0059] like Figure 4 As shown, during the writing process of the magnetic tunnel junction in this embodiment, the magnetic moment of the free layer can be configured as follows: When writing information, a spin orbital moment (SOT) current is first introduced between ports T1 and T2. Under the combined effect of the DMI effect and the SOT current, the free ferromagnetic layer obtains a stable horizontally curled spin texture. Then, a voltage-controlled anisotropy voltage is applied to port T4, so that the spin textures on the left and right sides of the free ferromagnetic layer with different orientations have different vertical anisotropies. After that, the spin orbital moment (SOT) current is released, and the spin texture orientation of the free ferromagnetic layer with strong vertical anisotropy gradually diffuses to the entire free ferromagnetic layer. After the voltage-controlled anisotropy voltage is released, the free ferromagnetic layer restores a stable and vertical orientation.

[0060] Furthermore, embodiments of this application can achieve logical control of the free-layer magnetic moment by controlling the SOT current and voltage-controlled anisotropic voltage of the spin orbital moment: such as Figure 5 As shown, when the SOT current polarity of the spin orbit moment is positive, applying a positive voltage-controlled anisotropic voltage will ultimately cause the magnetic moment of the free layer to spin upward, and applying a negative voltage-controlled anisotropic voltage will ultimately cause the magnetic moment of the free layer to spin downward; the situation is reversed when the SOT current polarity of the spin orbit moment is negative. The final spin state of the free layer magnetic moment is independent of the initial spin state and is completely controlled by the polarity of the SOT current of the spin orbit moment and the voltage-controlled anisotropic voltage. Different combinations of voltages and currents improve the flexibility of information writing.

[0061] Therefore, in this embodiment of the application, when writing to the tunnel junction basic structure by means of current, the writing current passes through the bottom heavy metal layer, and the writing voltage is applied to the top of the control terminal. Since the current does not pass directly through the magnetic tunnel junction structure, the lifespan of the device is greatly increased. In addition, when reading information from the tunnel junction basic structure, this embodiment of the application can separate the read and write circuits by applying voltage to the top read terminal electrode layer, thereby further increasing the lifespan of the magnetic tunnel junction device.

[0062] It is understood that the embodiments of this application, through a novel spin-orbit moment magnetic tunnel junction device structure based on the interface DMI effect and the local pressure-controlled anisotropy effect, do not require a permanent magnet to provide an external magnetic field for the traditional spin-orbit moment effect magnetic tunnel junction. Compared with other schemes that break structural symmetry, the embodiments of this application can achieve field-free flipping of the magnetic tunnel junction by using spin-orbit moment effect magnetic tunnel junction materials compatible with traditional CMOS without introducing additional magnetic materials and through structural improvement design.

[0063] The data read / write method based on a field-free flip magnetic tunnel junction device structure proposed in this application extends the traditional magnetic tunnel junction structure with a heavy metal layer, a free ferromagnetic layer, and an oxide layer. A control section composed of an electrode layer and a read section composed of a reference ferromagnetic layer, a pinning layer, and an electrode layer are constructed on this basis. When writing information, an auxiliary voltage is applied to the electrodes of the control section to assist the current in the bottom heavy metal layer to complete the field-free flip, thus realizing the writing of information. When reading information, the state of the free layer magnetic moment is read by the magnitude of the current through the read section. Based on the proven feasibility, this application analyzes the scalability of the device structure and dissects the architecture of integrating the magnetic tunnel junction into a magnetic random access memory. It innovatively adds an additional electrode layer on the extended oxide layer, thereby introducing local voltage-controlled anisotropy and successfully solving the problem of requiring an external magnetic field for the flip of the spin-orbit magnetic tunnel junction.

[0064] Secondly, the data read / write device based on the field-free flip magnetic tunnel junction device structure proposed in the embodiments of this application is described with reference to the accompanying drawings.

[0065] Figure 6 This is a block diagram of a data read / write device based on a field-free flip magnetic tunnel junction device structure according to an embodiment of this application.

[0066] like Figure 6 As shown, the data read / write device 10 based on the field-free flip magnetic tunnel junction device structure includes: a construction module 100, a gating module 200, and a read / write module 300.

[0067] The construction module 100 is used to construct at least one magnetic tunnel junction based on a pre-constructed shared drive-side architecture, control-side architecture, read-side architecture and multiple control MOS transistors, and to construct a magnetic tunnel junction array according to at least one magnetic tunnel junction and a preset arrangement rule.

[0068] The gating module 200 is used to select the target magnetic tunnel junction in the magnetic tunnel junction array through the preset row address selection line, and to obtain the write spin-orbit moment current, voltage-controlled anisotropic voltage and read current corresponding to the target magnetic tunnel junction using the preset column address selection line.

[0069] The read / write module 300 is used to control the oxide layer in the shared drive-side architecture to generate a voltage-controlled anisotropy effect through voltage-controlled anisotropy voltage. Based on the voltage-controlled anisotropy effect and the preset local voltage-controlled anisotropy combined with the interface effect, it applies a write spin-orbit moment current to the free layer in the shared drive-side architecture to write the target data into the free layer. The target data is then read using the reference ferromagnetic layer, oxide layer and free layer in the read-side architecture.

[0070] Optionally, in one embodiment of this application, the building module 100 includes: a first stacking unit and a second stacking unit.

[0071] The first stacking unit is used to perform bottom-up stacking operations on a preset heavy metal layer, free layer and oxide layer to construct a common driving side architecture, and to stack a voltage-controlled anisotropic electrode layer on one side of the oxide layer to construct a control side architecture.

[0072] The second stacking unit is used to stack a reference ferromagnetic layer, a pre-defined pinning layer, and an electrode layer on the other side of the oxide layer to construct a read-side architecture.

[0073] Optionally, in one embodiment of this application, the gating module 200 includes a configuration unit and an acquisition unit.

[0074] The configuration unit is used to connect the gate of each control MOS transistor corresponding to each magnetic tunnel junction in the magnetic tunnel junction array to the row address selection line, and to configure each control MOS transistor in the cutoff region or the variable resistor region respectively, so as to disconnect or select the target magnetic tunnel junction.

[0075] The acquisition unit is used to acquire the write spin orbital moment current, voltage-controlled anisotropic voltage, and read current respectively through the column address selection line of the target magnetic tunnel junction.

[0076] Optionally, in one embodiment of this application, the read / write module 300 includes: a generation unit, a writing unit, an establishment unit, and a reading unit.

[0077] The generation unit is used to generate a writing spin-orbit torque current in a preset heavy metal layer based on a preset spin-orbit coupling effect.

[0078] The write unit is used to apply a voltage-controlled anisotropic voltage to the free layer through the voltage-controlled anisotropic electrode port on the control side in the control side architecture. Based on the write spin orbital moment current, the voltage-controlled anisotropic voltage, and the preset local voltage-controlled anisotropic interface effect, the free layer is flipped so as to write the target data into the free layer of the shared drive side architecture.

[0079] Establishment unit, used to construct read-side magnetic tunnel junction architecture based on reference ferromagnetic layer in read-side architecture, oxide layer and free layer in shared drive-side architecture.

[0080] The reading unit is used to obtain the resistance information corresponding to the read-side magnetic tunnel junction architecture by means of the read-side magnetic tunnel junction port and the corresponding port in the heavy metal layer based on the read current, so as to read the target data according to the resistance information.

[0081] It should be noted that the foregoing explanation of the data read / write method embodiment based on the field-free flip magnetic tunnel junction device structure also applies to the data read / write device based on the field-free flip magnetic tunnel junction device structure of this embodiment, and will not be repeated here.

[0082] The data read / write device based on a field-free flip magnetic tunnel junction device structure proposed in this application includes a construction module 100, used to construct at least one magnetic tunnel junction based on a pre-constructed common drive-side architecture, control-side architecture, read-side architecture and multiple control MOS transistors, and to construct a magnetic tunnel junction array according to at least one magnetic tunnel junction and a preset arrangement rule; a selection module 200, used to select a target magnetic tunnel junction in the magnetic tunnel junction array through a preset row address selection line, and to obtain the write spin-orbit moment current, voltage-controlled anisotropy voltage and read current corresponding to the target magnetic tunnel junction using a preset column address selection line; and a read / write module 300, used to control the oxide layer in the common drive-side architecture to generate a voltage-controlled anisotropy effect through the voltage-controlled anisotropy voltage, and to apply a write spin-orbit moment current to the free layer in the common drive-side architecture based on the voltage-controlled anisotropy effect and a preset local voltage-controlled anisotropy combined interface effect, so as to write the target data into the free layer, and to read the target data using the reference ferromagnetic layer, oxide layer and free layer in the read-side architecture. This application eliminates the need for permanent magnets that provide an external magnetic field in traditional spin-orbit moment effect magnetic tunnel junctions. Instead, it enables the use of spin-orbit moment effect magnetic tunnel junction materials compatible with traditional CMOS without introducing additional magnetic materials. This allows for field-free switching of the magnetic tunnel junction through structural improvements.

[0083] Figure 7 A schematic diagram of the structure of an electronic device provided in an embodiment of this application. The electronic device may include:

[0084] The memory 701, the processor 702, and the computer program stored on the memory 701 and executable on the processor 702.

[0085] When the processor 702 executes the program, it implements the data read / write method based on the field-free flip magnetic tunnel junction device structure provided in the above embodiments.

[0086] Furthermore, electronic devices also include:

[0087] Communication interface 703 is used for communication between memory 701 and processor 702.

[0088] The memory 701 is used to store computer programs that can run on the processor 702.

[0089] The memory 701 may include high-speed RAM memory, and may also include non-volatile memory, such as at least one disk storage device.

[0090] If the memory 701, processor 702, and communication interface 703 are implemented independently, then the communication interface 703, memory 701, and processor 702 can be interconnected via a bus to complete communication between them. The bus can be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus, etc. Buses can be categorized as address buses, data buses, control buses, etc. For ease of representation, Figure 7 The bus is represented by a single thick line, but this does not mean that there is only one bus or one type of bus.

[0091] Optionally, in a specific implementation, if the memory 701, processor 702, and communication interface 703 are integrated on a single chip, then the memory 701, processor 702, and communication interface 703 can communicate with each other through an internal interface.

[0092] The processor 702 may be a central processing unit (CPU), an application specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of this application.

[0093] This application also provides a computer-readable storage medium storing a computer program thereon, which, when executed by a processor, implements the above-described data read / write method based on a field-free flip magnetic tunnel junction device structure.

[0094] This application also provides a computer program product, including a computer program, which, when executed, is used to implement the above-described data read / write method based on a field-free flip magnetic tunnel junction device structure.

[0095] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0096] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "N" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0097] Any process or method described in the flowchart or otherwise herein can be understood as representing a module, segment, or portion of code comprising one or N executable instructions for implementing custom logic functions or processes, and the scope of the preferred embodiments of this application includes additional implementations in which functions may be performed not in the order shown or discussed, including substantially simultaneously or in reverse order depending on the functions involved, as should be understood by those skilled in the art to which embodiments of this application pertain.

[0098] The logic and / or steps represented in the flowchart or otherwise described herein, for example, can be considered as a sequenced list of executable instructions for implementing logical functions, and can be embodied in any computer-readable medium for use by, or in conjunction with, an instruction execution system, apparatus, or device (such as a computer-based system, a processor-included system, or other system that can fetch and execute instructions from, an instruction execution system, apparatus, or device). For the purposes of this specification, "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transmit programs for use by, or in conjunction with, an instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of computer-readable media include: an electrical connection having one or more wires (electronic device), a portable computer disk drive (magnetic device), random access memory (RAM), read-only memory (ROM), erasable and editable read-only memory (EPROM or flash memory), fiber optic devices, and portable optical disc read-only memory (CDROM). Alternatively, the computer-readable medium may be paper or other suitable media on which the program can be printed, since the program can be obtained electronically by optically scanning the paper or other medium, followed by editing, interpreting, or otherwise processing as necessary, and then stored in a computer memory.

[0099] It should be understood that the various parts of this application can be implemented using hardware, software, firmware, or a combination thereof. In the above embodiments, the N steps or methods can be implemented using software or firmware stored in memory and executed by a suitable instruction execution system. If implemented in hardware, as in another embodiment, it can be implemented using any one or a combination of the following techniques known in the art: discrete logic circuits having logic gates for implementing logical functions on data signals, application-specific integrated circuits (ASICs) having suitable combinational logic gates, programmable gate arrays (PGAs), field-programmable gate arrays (FPGAs), etc.

[0100] Those skilled in the art will understand that all or part of the steps of the methods in the above embodiments can be implemented by a program instructing related hardware. The program can be stored in a computer-readable storage medium, and when executed, the program includes one or a combination of the steps of the method embodiments.

[0101] Furthermore, the functional units in the various embodiments of this application can be integrated into a processing module, or each unit can exist physically separately, or two or more units can be integrated into a module. The integrated module can be implemented in hardware or as a software functional module. If the integrated module is implemented as a software functional module and sold or used as an independent product, it can also be stored in a computer-readable storage medium.

[0102] The storage medium mentioned above can be a read-only memory, a disk, or an optical disk, etc. Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of this application.

Claims

1. A data read / write method based on a field-free flip magnetic tunnel junction device structure, characterized in that, Includes the following steps: Based on a pre-built shared drive-side architecture, control-side architecture, read-side architecture, and multiple control MOS transistors, at least one magnetic tunnel junction is constructed, and a magnetic tunnel junction array is constructed according to the at least one magnetic tunnel junction and a preset arrangement rule. The target magnetic tunnel junction in the magnetic tunnel junction array is selected by the preset row address selection line, and the write spin-orbit moment current, voltage-controlled anisotropic voltage and read current corresponding to the target magnetic tunnel junction are obtained by the preset column address selection line. The voltage-controlled anisotropy voltage controls the oxide layer in the common drive-side architecture to generate a voltage-controlled anisotropy effect. Based on the voltage-controlled anisotropy effect and the preset local voltage-controlled anisotropy combined with the interface effect, the write spin-orbit moment current is applied to the free layer in the common drive-side architecture to write the target data into the free layer. The target data is then read using the reference ferromagnetic layer, the oxide layer, and the free layer in the read-side architecture.

2. The method according to claim 1, characterized in that, The method involves constructing at least one magnetic tunnel junction based on a pre-built shared drive-side architecture, control-side architecture, read-side architecture, and multiple control MOS transistors, and then constructing a magnetic tunnel junction array according to the at least one magnetic tunnel junction and a preset arrangement rule, including: The preset heavy metal layer, the free layer and the oxide layer are stacked from bottom to top to construct the common driving side architecture, and a voltage-controlled anisotropic electrode layer is stacked on one side of the oxide layer to construct the control side architecture. The reference ferromagnetic layer, the pre-defined pinning layer, and the electrode layer are stacked on the other side of the oxide layer to construct the read-side architecture.

3. The method according to claim 1, characterized in that, The step of selecting the target magnetic tunnel junction in the magnetic tunnel junction array through a preset row address selection line, and obtaining the write spin-orbit moment current, voltage-controlled anisotropy voltage, and read current corresponding to the target magnetic tunnel junction using a preset column address selection line, includes: The gate of each control MOS transistor corresponding to each magnetic tunnel junction in the magnetic tunnel junction array is connected to the row address selection line, and each control MOS transistor is configured in the cutoff region or the variable resistor region respectively to disconnect or select the target magnetic tunnel junction. The write spin orbital moment current, the voltage-controlled anisotropic voltage, and the read current are obtained respectively through the column address selection line of the target magnetic tunnel junction.

4. The method according to claim 1, characterized in that, The method involves controlling the oxide layer in the common drive-side architecture to generate a voltage-controlled anisotropy effect through the voltage-controlled anisotropy voltage, and applying the write spin-orbit moment current to the free layer in the common drive-side architecture based on the voltage-controlled anisotropy effect and a preset local voltage-controlled anisotropy combined with an interface effect, so as to write the target data into the free layer, and reading the target data using the reference ferromagnetic layer, the oxide layer, and the free layer in the read-side architecture, including: Based on the preset spin-orbit coupling effect, the preset heavy metal layer generates the written spin-orbit moment current. The voltage-controlled anisotropic voltage is applied to the free layer through the control-side voltage-controlled anisotropic electrode port in the control-side architecture. Based on the write spin orbital moment current, the voltage-controlled anisotropic voltage, and the preset local voltage-controlled anisotropic combination interface effect, the free layer is flipped so that the target data is written into the free layer of the shared drive-side architecture. A read-side magnetic tunnel junction architecture is constructed based on the reference ferromagnetic layer in the read-side architecture, the oxide layer in the common drive-side architecture, and the free layer. Based on the read current, the resistance information corresponding to the read-side magnetic tunnel junction architecture is obtained through the read-side magnetic tunnel junction port corresponding to the read-side magnetic tunnel junction architecture and the corresponding port in the heavy metal layer, so as to read the target data according to the resistance information.

5. A data read / write device based on a field-free flip magnetic tunnel junction device structure, characterized in that, include: The construction module is used to construct at least one magnetic tunnel junction based on a pre-constructed shared drive-side architecture, control-side architecture, read-side architecture and multiple control MOS transistors, and to construct a magnetic tunnel junction array according to the at least one magnetic tunnel junction and a preset arrangement rule; The gating module is used to select the target magnetic tunnel junction in the magnetic tunnel junction array through a preset row address selection line, and to obtain the write spin-orbit moment current, voltage-controlled anisotropic voltage and read current corresponding to the target magnetic tunnel junction using a preset column address selection line. The read / write module is used to control the oxide layer in the common drive-side architecture to generate a voltage-controlled anisotropy effect through the voltage-controlled anisotropy voltage, and based on the voltage-controlled anisotropy effect and a preset local voltage-controlled anisotropy combined with the interface effect, to apply the write spin-orbit moment current to the free layer in the common drive-side architecture to write the target data into the free layer, and to read the target data using the reference ferromagnetic layer, the oxide layer and the free layer in the read-side architecture.

6. The apparatus according to claim 5, characterized in that, The building module includes: The first stacking unit is used to perform a bottom-up stacking operation on the preset heavy metal layer, the free layer and the oxide layer to construct the common driving side architecture, and to stack a voltage-controlled anisotropic electrode layer on one side of the oxide layer to construct the control side architecture. The second stacking unit is used to stack the reference ferromagnetic layer, the preset pinning layer and the electrode layer on the other side of the oxide layer to construct the read-side architecture.

7. The apparatus according to claim 5, characterized in that, The gating module includes: A configuration unit is used to connect the gate of each control MOS transistor corresponding to each magnetic tunnel junction in the magnetic tunnel junction array to the row address selection line, and to configure each control MOS transistor in the cutoff region or the variable resistor region respectively, so as to disconnect or select the target magnetic tunnel junction; The acquisition unit is used to acquire the write spin orbital moment current, the voltage-controlled anisotropic voltage, and the read current respectively through the column address selection line of the target magnetic tunnel junction.

8. An electronic device, characterized in that, include: A memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the data read / write method based on a field-free flip magnetic tunnel junction device structure as described in any one of claims 1-4.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that, The program is executed by the processor to implement the data read / write method based on the field-free flip magnetic tunnel junction device structure as described in any one of claims 1-4.

10. A computer program product, comprising a computer program, characterized in that, The computer program is executed to implement the data read / write method based on the field-free flip magnetic tunnel junction device structure as described in any one of claims 1-4.

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