High-temperature stable spectrum selective infrared film and preparation method thereof

By designing and thermally pre-treating the Fabry-Perot cavity structure infrared thin film, the problems of single material system and insufficient high-temperature stability were solved, achieving long-term stability and spectral selectivity of the infrared thin film under high-temperature environment, making it suitable for high-temperature components.

CN122043640AActive Publication Date: 2026-05-15HANGZHOU COMPOSITUO TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202610500504.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-04-16
Publication Date
2026-05-15
Estimated Expiration
2046-04-16

AI Technical Summary

Technical Problem

Existing infrared stealth materials have a single material system and insufficient high-temperature stability at high temperatures, which leads to interdiffusion of elements and phase transformation between film layers, destroying the Fabry-Perot resonator structure and making it unable to work effectively in high-temperature environments.

Method used

The infrared thin film employing the Fabry-Perot cavity structure includes a bottom infrared reflective layer, an intermediate dielectric resonant layer, an upper partial absorption layer, and a top encapsulation protective layer. A stable crystalline dielectric resonant layer is formed through thermal pretreatment. Combined with optimized thickness design and magnetron sputtering process, high-temperature stability and spectral selectivity are achieved.

Benefits of technology

The film operates stably at 600℃ for extended periods. It exhibits low emissivity in the 3-5μm and 8-14μm bands and high emissivity in the 5-8μm band, enhancing its high-temperature stability and spectral selectivity. This makes it suitable for high-temperature components such as engines and high-speed aircraft.

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Abstract

The invention discloses a high-temperature stable spectrum selective infrared film and a preparation method thereof, and belongs to the technical field of infrared functional materials. The thin film adopts a Fabry-Perot cavity multi-layer structure and sequentially comprises a bottom infrared reflecting layer, a top infrared reflecting layer, a top infrared reflecting layer, a bottom infrared reflecting layer and a top infrared reflecting layer from bottom to top, the intermediate dielectric resonance layer is prepared from an infrared transparent semiconductor material; the upper-layer part absorption layer is a metal thin film; the top packaging protection layer is made of an infrared transparent dielectric material; wherein the intermediate medium resonance layer is of a crystalline structure formed through thermal pretreatment, and the crystalline structure fundamentally inhibits interdiffusion of elements between film layers and structural phase change at high temperature; through the design, the thin film has low emissivity in atmospheric window wave bands of 3-5 microns and 8-14 microns, has high emissivity in a non-detection wave band of 5-8 microns, and can be used at the temperature of 600 DEG C for a long time.
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