Optoelectronic device and method of manufacturing the same, display device

Abstract

The application discloses an optoelectronic device, a preparation method thereof and a display device. The optoelectronic device comprises a first electrode, a photoelectric functional layer, a carrier functional layer and a second electrode which are stacked in sequence, wherein the carrier functional layer comprises inorganic nanoparticles, the inorganic nanoparticles have a sheet structure, and the average sheet diameter of the sheet structure is greater than or equal to 50 nm. The optoelectronic device has high light emitting efficiency.

Description

Technical Field

[0001] This application relates to the field of optoelectronic device technology, and in particular to an optoelectronic device, a method for fabricating the optoelectronic device, and a display device. Background Technology

[0002] Currently, the most widely used optoelectronic devices are organic light-emitting devices (OLEDs) and quantum dot light-emitting devices (QLEDs). OLEDs, due to their superior display performance, including self-illumination, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display capabilities, have become the mainstream technology in the display field. QLEDs offer advantages such as saturated emitted light color, tunable wavelength, low turn-on voltage, good solution processability, and easy fine control of quantum dots. Furthermore, they boast high quantum yields in both photoluminescence and electroluminescence, making them a strong competitor to OLEDs in recent years.

[0003] Traditional OLED and QLED device structures generally include an anode, a hole injection layer, a hole transport layer, a photoelectric functional layer, an electron transport layer, an electron injection layer, and a cathode. Under the influence of an electric field, holes generated at the anode and electrons generated at the cathode move and are injected into the hole transport layer and electron transport layer, respectively, eventually migrating to the photoelectric functional layer. When the two meet in the photoelectric functional layer, they generate excitons, which in turn excite the light-emitting molecules to produce visible light.

[0004] However, the efficiency of existing optoelectronic devices is relatively low and needs further improvement. Summary of the Invention

[0005] In view of this, this application provides an optoelectronic device, a method for fabricating the same, and a display device.

[0006] In a first aspect, embodiments of this application provide an optoelectronic device, comprising a first electrode, an optoelectronic functional layer, a charge carrier functional layer, and a second electrode stacked sequentially, wherein the charge carrier functional layer comprises inorganic nanoparticles having a sheet-like structure, and the average sheet diameter of the sheet-like structure is greater than or equal to 50 nm.

[0007] Secondly, embodiments of this application also provide a method for fabricating an optoelectronic device, comprising the following steps:

[0008] A photoelectric device preform is provided, the photoelectric device preform including a first electrode;

[0009] Initial inorganic nanoparticles are deposited on the optoelectronic device preform to obtain a pre-fabricated charge carrier functional layer. The pre-fabricated charge carrier functional layer is then subjected to far-infrared irradiation to convert the initial inorganic nanoparticles into inorganic nanoparticles, thus obtaining the charge carrier functional layer again.

[0010] A second electrode is disposed on the charge carrier functional layer to obtain a photoelectric device;

[0011] or,

[0012] A photoelectric device preform is provided, the photoelectric device preform including a second electrode;

[0013] Initial inorganic nanoparticles are deposited on the optoelectronic device preform to obtain a pre-fabricated charge carrier functional layer. The pre-fabricated charge carrier functional layer is then subjected to far-infrared irradiation to convert the initial inorganic nanoparticles into inorganic nanoparticles, thus obtaining the charge carrier functional layer again.

[0014] A first electrode is disposed on the charge carrier functional layer to obtain an optoelectronic device.

[0015] Thirdly, this application also provides a display device including the aforementioned optoelectronic device.

[0016] The optoelectronic device described in this application has high luminous efficiency. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a flowchart illustrating a method for fabricating an optoelectronic device according to an embodiment of this application;

[0019] Figure 2 This is a flowchart of another method for fabricating an optoelectronic device provided in an embodiment of this application;

[0020] Figure 3 This is a schematic diagram of the structure of an optoelectronic device provided in an embodiment of this application;

[0021] Figure 4 This is a schematic diagram of another optoelectronic device provided in an embodiment of this application;

[0022] Figure 5 This is a schematic diagram of the structure of another optoelectronic device provided in the embodiments of this application;

[0023] Figure 6 This is a TEM image of the electron transport layer in Embodiment 1 of this application;

[0024] Figure 7 This is a TEM image of the electron transport layer of Comparative Example 1 of this application.

[0025] Figure label:

[0026] Optoelectronic device 100; anode 10; electronic functional layer 20; cathode 30; optoelectronic functional layer 40; hole transport layer 50; hole injection layer 60. Detailed Implementation

[0027] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Furthermore, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application.

[0028] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in its actual use or operating state, specifically the drawing directions in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. Furthermore, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc., are used merely as illustrative purposes and do not impose numerical requirements or establish a numerical order.

[0029] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0030] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one," "at least one of the following," or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c," or "at least one of a, b, and c," can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0031] In this application, the term "on" forming another layer on a certain layer is a broad concept. It can mean that the formed layer is adjacent to a certain layer, or that there are other spacer structures between the two layers. For example, when a cathode is formed "on" an electronic functional layer, the term "on" can mean that the formed cathode is adjacent to the electronic functional layer, or that there are other spacer structures between the cathode and the electronic functional layer, such as a photoelectric functional layer.

[0032] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the referred range.

[0033] It should be noted that the thickness of the film layer in this application was measured using a step tester.

[0034] The materials commonly used for the electronic functional layer of optoelectronic devices include nanoscale inorganic nanoparticles such as metal oxide particles. Although these inorganic nanoparticles have high conductivity and electron transport performance, due to their small particle size, the films prepared using these inorganic nanoparticles inevitably suffer from problems such as large particle spacing, poor particle alignment, and poor film density. This leads to instability of the electronic functional layer within the same pixel plane, which can easily cause performance changes during the operation of optoelectronic devices, ultimately affecting the storage stability, operational stability, lifespan, and reliability of optoelectronic devices.

[0035] The technical solution of this application is as follows:

[0036] Firstly, please refer to Figure 1 and Figure 3 This application provides a method for fabricating an optoelectronic device, comprising the following steps:

[0037] Step S11: Provide an optoelectronic device preform, the optoelectronic device preform including a first electrode;

[0038] Step S12: Deposit initial inorganic nanoparticles on the optoelectronic device preform to obtain a preformed carrier functional layer, and irradiate the preformed carrier functional layer with far-infrared light to convert the initial inorganic nanoparticles into inorganic nanoparticles to obtain the carrier functional layer.

[0039] Step S13: A second electrode is disposed on the carrier functional layer to obtain a photoelectric device.

[0040] Please see Figure 2 and Figure 3 This application provides another method for fabricating an optoelectronic device, comprising the following steps:

[0041] Step S21: Provide a photoelectric device preform, the photoelectric device preform including a second electrode;

[0042] Step S22: Deposit initial inorganic nanoparticles on the optoelectronic device preform to obtain a preformed carrier functional layer, and irradiate the preformed carrier functional layer with far-infrared light to convert the initial inorganic nanoparticles into inorganic nanoparticles to obtain the carrier functional layer.

[0043] Step S23: Set a first electrode on the carrier functional layer to obtain an optoelectronic device.

[0044] The method for fabricating the optoelectronic device described in this application involves preparing a carrier functional layer by far-infrared irradiation of a pre-fabricated carrier functional layer comprising initial inorganic nanoparticles. The far-infrared irradiation accelerates crystal plane contact and collisions between the initial inorganic nanoparticles. By applying energy to the initial inorganic nanoparticles, the crystal planes of adjacent initial inorganic nanoparticles rotate, reconstruct, and form a larger-sized, continuous sheet-like structure (see reference). Figure 6 The inorganic nanoparticles used in the fabrication result in relatively large particle sizes in the prepared carrier functional layer. This leads to stable physical and / or chemical properties of the inorganic nanoparticles, such as band gap and confinement effect. Consequently, the prepared carrier functional layer exhibits higher density, higher continuity, higher uniformity, and lower surface roughness. This reduces the mobility differences between different regions of the carrier functional layer, thereby improving its lifespan and transport stability. Ultimately, this enhances the luminous efficiency, lifespan, and operational stability of the optoelectronic device 100.

[0045] Furthermore, increasing the density of the carrier functional layer can improve the interfacial contact between the carrier functional layer and its adjacent functional layers or electrodes, thereby further improving the luminous efficiency, lifetime, and reliability of the optoelectronic device 100.

[0046] In some embodiments, the wavelength of the far-infrared light used in the far-infrared irradiation is 10 to 50 μm, for example, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, and any range between two values.

[0047] In some embodiments, the power of the far-infrared irradiation is 4000–5000 W, for example, 4000 W, 4200 W, 4300 W, 4500 W, 4600 W, 4800 W, 5000 W, or any range between two values. Within this power range, the inorganic nanoparticles in the prepared charge carrier functional layer can have a suitablely large particle size, resulting in higher storage stability and lifetime for the prepared optoelectronic device 100.

[0048] In some embodiments, the far-infrared irradiation time is 30–60 min, for example, 30 min, 35 min, 40 min, 45 min, 50 min, 55 min, 60 min, or any range between two values. Within this time range, the pre-fabricated carrier functional layer can be effectively processed while avoiding damage to inorganic nanoparticles due to excessive time. This is beneficial for preparing a carrier functional layer with high density, continuity, uniformity, and stability, and for preparing an optoelectronic device 100 with high stability and lifetime.

[0049] In some embodiments, the first electrode is an anode 10, the second electrode is a cathode 30, and the charge carrier functional layer is an electronic functional layer 20. It is understood that the electronic functional layer 20 can be an electron transport layer or an electron injection layer.

[0050] In some embodiments, the material of the initial inorganic nanoparticles is an N-type inorganic semiconductor material, and correspondingly, the material of the inorganic nanoparticles is also an N-type inorganic semiconductor material.

[0051] The N-type inorganic semiconductor materials include, but are not limited to, one or more of the following: a first doped metal oxide, a first undoped metal oxide, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The first undoped metal oxide includes, but is not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the first doped metal oxide include, but are not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide include, but are not limited to, one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include, but are not limited to, one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include, but are not limited to, one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include, but are not limited to, one or more of CuInS and CuGaS.

[0052] In some embodiments, the molar percentage of the dopant element in the first doped metal oxide is 5% to 15%, for example, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, and any range between any two of the stated values.

[0053] In some instances, the initial inorganic nanoparticles have a particulate structure.

[0054] In some embodiments, the average particle size of the granular structure is 2 to 8 nm, for example, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, and any range between any two of the stated values.

[0055] In some instances, the inorganic nanoparticles have a sheet-like structure. The continuous sheet-like structure offers better continuity compared to dispersed particles, which is beneficial for charge conduction.

[0056] In some embodiments, the average sheet diameter of the sheet structure is greater than or equal to 50 nm, for example, greater than or equal to 52 nm, 53 nm, 55 nm, 60 nm, 65 nm, 70 nm, and the range between any two of the stated values.

[0057] In some embodiments, the average thickness of the sheet-like structure is 1 to 10 nm, for example, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, and the range between any two of the stated values.

[0058] In some embodiments, the initial inorganic nanoparticles and the methods for measuring the inorganic nanoparticles may include, but are not limited to, transmission electron microscopy (TEM), scanning electron microscopy (SEM), dynamic light scattering (DLS), or atomic force microscopy (AFM). In at least some embodiments, the average particle size of the initial inorganic nanoparticles, as well as the average sheet diameter and average thickness of the inorganic nanoparticles, are measured by transmission electron microscopy (TEM). It should be noted that for irregular sheet-like structures, the average of the major and minor axes is taken when measuring the average sheet diameter.

[0059] The far-infrared irradiation can accelerate the crystal plane contact and collision between the initial inorganic nanoparticles. By applying energy to the initial inorganic nanoparticles, the crystal planes of adjacent initial inorganic nanoparticles are rotated, reconstructed, and formed into larger inorganic nanoparticles with continuous sheet-like structures. Therefore, the inorganic nanoparticles can also be considered as sheet-like secondary nanoparticles formed by the growth of initial inorganic nanoparticles.

[0060] Please see Figure 3 In some embodiments, the optoelectronic device preform further includes a photoelectric functional layer 40 disposed on the anode 10. Correspondingly, the charge carrier functional layer is disposed on the photoelectric functional layer 40.

[0061] Please see Figure 4 In some embodiments, the optoelectronic device preform further includes a hole transport layer 50 and an optoelectronic functional layer 40 sequentially stacked on the anode 10. Correspondingly, the charge carrier functional layer is disposed on the optoelectronic functional layer 40.

[0062] Please see Figure 5 In some embodiments, the optoelectronic device preform further includes a hole injection layer 60, a hole transport layer 50, and a photoelectric functional layer 40 sequentially stacked on the anode 10. Correspondingly, the carrier functional layer is disposed on the photoelectric functional layer 40.

[0063] Please see Figure 3 In some embodiments, step S23 includes: sequentially disposing of a photoelectric functional layer 40 and a first electrode on the charge carrier functional layer.

[0064] Please see Figure 4 In some embodiments, step S23 includes: sequentially disposing of a photoelectric functional layer 40, a hole transport layer 50, and a first electrode on the carrier functional layer.

[0065] Please see Figure 5 In some embodiments, step S23 includes: sequentially disposing of a photoelectric functional layer 40, a hole transport layer 50, a hole injection layer 60, and a first electrode on the carrier functional layer.

[0066] The methods for setting the first electrode, the second electrode, the photoelectric functional layer 40, the hole transport layer 50, the hole injection layer 60, and the initial inorganic nanoparticle deposition can each be implemented independently using conventional techniques in the field, such as chemical or physical methods. Chemical methods include chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include physical deposition and solution methods. Physical deposition methods include thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, and pulsed laser deposition, etc.; solution methods can include spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spraying, roller coating, casting, slot coating, and strip coating, etc.

[0067] In some embodiments, the method for depositing initial inorganic nanoparticles is a solution method, comprising: dispersing initial inorganic nanoparticles in a solvent to obtain an initial inorganic nanoparticle dispersion, and depositing the initial inorganic nanoparticle dispersion.

[0068] The solvents include, but are not limited to, one or more of alcohol solvents and alcohol ether solvents. The alcohol solvents include, but are not limited to, one or more of ethanol, isopropanol, butanol, n-pentanol, and isoamyl alcohol. The alcohol ether solvents include, but are not limited to, ethylene glycol monomethyl ether.

[0069] It is understood that there is no limitation on the amount of solvent used, as long as it can sufficiently disperse the initial inorganic nanoparticles. In some embodiments, the concentration of the initial inorganic nanoparticle dispersion is 10–50 mg / mL, for example, 10 mg / mL, 20 mg / mL, 30 mg / mL, 40 mg / mL, 50 mg / mL, and any range between two values. Within this concentration range, it is beneficial to prepare a pre-fabricated charge carrier functional layer with good film-forming properties. For example, it is beneficial to have a lower surface roughness of the prepared pre-fabricated charge carrier functional layer and to avoid gaps on the surface of the charge carrier functional layer, thereby facilitating the preparation of a charge carrier functional layer with good film-forming properties, and further facilitating the preparation of optoelectronic devices with longer lifetimes and higher luminous efficiency.

[0070] In some embodiments, after irradiating the prefabricated carrier functional layer with far-infrared light and before obtaining the carrier functional layer, a heat treatment is further included. The heat treatment can dry the film layer, and is also beneficial for preparing a carrier functional layer with high stability and high carrier transport efficiency, and for improving the interfacial contact effect between the carrier functional layer and the bottom film layer.

[0071] In some embodiments, the heat treatment temperature is 70–80°C, for example, 70°C, 71°C, 72°C, 73°C, 74°C, 75°C, 76°C, 77°C, 78°C, 79°C, 80°C, or any range between two values, and the heat treatment time is 5–10 min, for example, 5 min, 6 min, 7 min, 8 min, 9 min, 10 min, or any range between two values. Within this temperature and time range, it is beneficial to prepare a carrier functional layer with high stability and high carrier transport efficiency, and it is also beneficial to improve the interfacial contact effect between the carrier functional layer and the bottom film layer.

[0072] It is understood that, in some embodiments, in order to accelerate the forward aging of the optoelectronic device 100, after the optoelectronic device 100 is prepared, the optoelectronic device is further subjected to annealing.

[0073] In some embodiments, the annealing temperature is 60 to 150°C, for example, 60°C, 70°C, 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, and any range between two values, and the annealing time is 1 min to 48 h, for example, 1 min, 30 min, 1 h, 10 h, 20 h, 30 h, 40 h, 48 h, and any range between two values.

[0074] It is understood that when the optoelectronic device 100 further includes functional layers that are conventionally used in optoelectronic devices to help improve the performance of the optoelectronic device, such as electron blocking layers, hole blocking layers, electron injection layers, interface modification layers, etc., the method of fabricating the optoelectronic device 100 may also include the step of fabricating the above-mentioned functional layers using conventional techniques in the art.

[0075] The anode 10 and the cathode 30 are electrodes known in the art for use in optoelectronic devices. For example, they can be, independently, but not limited to, doped metal oxide electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, elemental metal electrodes, or alloy electrodes. The material of the doped metal oxide electrode can be, but not limited to, one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), aluminum-doped magnesium oxide (AMO), and cadmium-doped zinc oxide. The composite electrode is an electrode formed by stacking two or more layers of conductive materials, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc., where " / " indicates a stacked structure. For example, AZO / Ag / AZO represents a composite electrode comprising sequentially stacked AZO, Ag, and AZO layers. The material of the elemental metal electrode may include, but is not limited to, one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg, and Ba. The alloy electrodes include, but are not limited to, Au:Mg alloy electrodes and Ag:Mg alloy electrodes.

[0076] In some embodiments, the anode 10 is an electrode with a relatively high work function, such as, but not limited to, a doped metal oxide electrode with a relatively high work function, a metal element electrode with a relatively high work function, and a carbon nanotube electrode. The metal element electrode with the high work function can be selected from, but is not limited to, Ni, Pt, Au, Ag, Ir, etc.

[0077] In some embodiments, the cathode 30 is an electrode with a relatively low work function, such as, but not limited to, a metallic elemental electrode, a composite electrode, and an alloy electrode with a relatively low work function. The metallic elemental electrode with a relatively low work function can be Ca, Ba, Al, Mg, etc. The composite electrode with a relatively low work function can be Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc. The alloy electrode with a relatively low work function can be Au:Mg and Ag:Mg, etc.

[0078] The material of the photoelectric functional layer 40 may include, but is not limited to, one or more of organic light-emitting materials and quantum dot light-emitting materials.

[0079] The organic light-emitting materials may include, but are not limited to, one or more of the following: CBP:Ir(mppy)3(4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III)), TCTX:Ir(mmpy)(4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium), diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delayed) materials, polymers containing BN covalent bonds, HLCT (hybrid local charge transfer excited state) materials, Exciplex (excitoplex) light-emitting materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives.

[0080] The quantum dot luminescent material may include, but is not limited to, one or more of the following: single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The core-shell structure quantum dot includes one or more shell layers.

[0081] The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots may be, but are not limited to, one or more of the following: II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The group II-VI compounds may include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds may include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The group III-V compounds may include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The group I-III-VI compounds may include, but are not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0082] As an example, the core-shell structured quantum dots may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS.

[0083] The perovskite semiconductor material may include, but is not limited to, doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs. + Ions, where M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of the following. The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of them.

[0084] In some embodiments, the photoelectric functional layer 40 may be a light-emitting layer for converting electricity into light. It will be understood that in other embodiments, the photoelectric functional layer 40 may also be a photoelectric layer for converting light into electricity.

[0085] The material of the hole transport layer 50 may also be a material known in the art for hole transport layers, for example, including but not limited to one or more of organic hole transport materials and inorganic hole transport materials.

[0086] The organic hole transport material may be selected from, but is not limited to, 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)biphenylamine) (Poly-TPD). N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))](TFB), poly (N-vinylcarbazole) (PVK) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), spiroNPB, poly(phenylenevinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MOMO-PPV), 2,2',7,7'-tetra[N,N-di(4-methoxyphenyl)amino]- 9,9'-spiro-omeTAD, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline](TAPC), 1,3-bis(carbazole-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p)phenylene vinylidene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazole)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylates and their derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives.

[0087] The inorganic hole transport material may be selected from, but is not limited to, one or more of doped graphene, undoped graphene, P-type metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The P-type metal oxide particles include, but are not limited to, one or more of second-doped and second-undoped metal oxide particles. The metal oxides in the second-doped and second-undoped metal oxide particles are each independently including, but are not limited to, one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping element in the second-doped metal oxide particles includes, but is not limited to, one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfides include, but are not limited to, one or more of CuS, MoS3, and WS3. The metal selenides include, but are not limited to, one or more of MoSe3 and WSe3. The metal nitrides include, but are not limited to, P-type gallium nitride.

[0088] The material of the hole injection layer 60 can also be a material known in the art for hole injection layers, such as, but not limited to, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene (HAT-CN), PEDOT, PEDOT:PSS, PEDOT:PSS derivatives doped with s-MoO3 (PEDOT:PSS:s-MoO3), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinone dimethyl ether (F4-TCQN), copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide.

[0089] In some embodiments, the thickness of the anode 10 is 100–120 nm.

[0090] In some embodiments, the thickness of the electronic functional layer 20 is 50–70 nm.

[0091] In some embodiments, the thickness of the cathode 30 is 30–100 nm.

[0092] In some embodiments, the thickness of the optoelectronic functional layer 40 is 50–70 nm.

[0093] In some embodiments, the thickness of the hole transport layer 50 is 50–80 nm.

[0094] In some embodiments, the thickness of the hole injection layer 60 is 50–80 nm.

[0095] In some embodiments, the optoelectronic device 100 further includes a substrate disposed on the side of the anode 10 away from the optoelectronic functional layer 40, or the substrate disposed on the side of the cathode 30 away from the optoelectronic functional layer 40.

[0096] It is understood that the substrate can be a rigid substrate or a flexible substrate. In some embodiments, the substrate material may be one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0097] It is understood that the optoelectronic device 100 can be an upright optoelectronic device or an inverted optoelectronic device.

[0098] It is understood that the optoelectronic device 100 can be a quantum dot optoelectronic device (QLED) or an organic optoelectronic device (OLED).

[0099] Secondly, please refer to Figure 3 This application also provides an optoelectronic device 100, which includes an anode 10, an optoelectronic functional layer 40, a charge carrier functional layer and a cathode 30 stacked sequentially, wherein the charge carrier functional layer includes inorganic nanoparticles.

[0100] In some embodiments, the inorganic nanoparticles have a sheet-like structure.

[0101] In some embodiments, the average sheet diameter of the sheet structure is greater than or equal to 50 nm.

[0102] In some embodiments, the average thickness of the sheet-like structure is 1 to 10 nm, for example, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, and the range between any two of the stated values.

[0103] In some embodiments, the roughness Ra of the charge carrier functional layer is less than or equal to 0.8. Further, in some embodiments, the roughness Ra of the charge carrier functional layer is less than or equal to 0.4.

[0104] It should be noted that, in this application, the roughness is measured by AFM atomic force microscopy.

[0105] In some embodiments, the porosity of the charge carrier functional layer is 10–25%. Further, in some embodiments, the porosity of the charge carrier functional layer is 15–25%.

[0106] It should be noted that the porosity in this application refers to the proportion of pore volume to the total volume in the thin film. The porosity testing method in this application is the BET method, which uses the Brunauer-Emmett-Teller (BET) law to calculate the porosity of the material. Specifically, the thin film sample is pretreated at 100–140°C (not higher than the processing temperature during thin film fabrication) and 10 Pa for 10 min to remove the originally adsorbed gas molecules; then, adsorption-desorption tests are performed in the range of 0.01–500 kPa, and the testing system directly reads the required data.

[0107] In some embodiments, the charge carrier functional layer is an electronic functional layer 20, and further, the electronic functional layer 20 is an electron transport layer or an electron injection layer.

[0108] The inorganic nanoparticles are made of N-type inorganic semiconductor materials, which are described above and will not be repeated here.

[0109] In at least some embodiments, the charge carrier functional layer is composed of the inorganic nanoparticles.

[0110] Please see Figure 4 In some embodiments, the optoelectronic device 100 further includes a hole transport layer 50 disposed between the anode 10 and the optoelectronic functional layer 40.

[0111] Please see Figure 5 In some embodiments, the optoelectronic device 100 further includes a hole injection layer 60 disposed sequentially between the anode 10 and the hole transport layer 50.

[0112] The materials and thicknesses of the anode 10, the cathode 30, the photoelectric functional layer 40, the hole transport layer 50, and the hole injection layer 60 are as described above and will not be repeated here.

[0113] It is understood that the optoelectronic device 100 may also be provided with some functional layers that are conventionally used in optoelectronic devices and help to improve the performance of optoelectronic devices, such as electron blocking layer, hole blocking layer, electron injection layer, etc.

[0114] It is understood that the materials of each layer of the optoelectronic device 100 can be adjusted according to the light emission requirements of the optoelectronic device 100.

[0115] The inorganic nanoparticles in the charge carrier functional layer of the optoelectronic device 100 described in this application have a sheet-like structure and a large average sheet diameter. This allows the inorganic nanoparticles to possess relatively stable physical and / or chemical properties, such as band gap and confinement effect. Furthermore, the inorganic nanoparticles in the charge carrier functional layer are more densely, continuously, and uniformly arranged. This high density and continuity effectively reduce the mobility differences between different regions of the charge carrier functional layer, thereby improving the lifetime and transport stability of the charge carrier functional layer, and consequently improving the luminous efficiency, lifetime, and reliability of the optoelectronic device 100. Moreover, the increased density of the charge carrier functional layer allows for better interfacial contact between the charge carrier functional layer and adjacent functional layers or electrodes, further enhancing the luminous efficiency, lifetime, and reliability of the optoelectronic device 100.

[0116] Thirdly, this application also relates to a display device, which includes the optoelectronic device 100.

[0117] The display device can be any electronic product with display function, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Among them, smart wearable devices can be, for example, smart bracelets, smartwatches, virtual reality (VR) headsets, etc.

[0118] The present application will be specifically described below through specific embodiments. The following embodiments are only some embodiments of the present application and are not intended to limit the present application.

[0119] Example 1

[0120] The ITO anode conductive glass substrate (ITO anode thickness 120nm) was cleaned with a cleaning agent to initially remove the stains on the surface. Then, it was ultrasonically cleaned for 20 minutes each in deionized water, acetone, anhydrous ethanol and deionized water to remove the impurities on the surface. Finally, it was dried with high-purity nitrogen.

[0121] The cleaned ITO conductive glass was placed in a glove box, and PEDOT:PSS material (the molar ratio of PEDOT to PSS is 1:1) was spin-coated onto the ITO anode. The material was then annealed at 80°C for 5 minutes to obtain a hole injection layer with a thickness of 80 nm.

[0122] TFB material was spin-coated onto the hole injection layer and annealed at 80°C for 5 min to obtain a hole transport layer with a thickness of 80 nm.

[0123] CdSeS / ZnS green quantum dot material (concentration 30 mg / mL) was spin-coated onto the hole transport layer, wherein the surface of the quantum dots was connected to octylthiol ligands, and each 1 mg of quantum dots contained 0.2 mmol of ligands. After annealing at 80 °C for 5 min, a photoelectric functional layer with a thickness of 70 nm was obtained.

[0124] An ethanol solution of initial inorganic nanoparticles ZnO with a concentration of 30 mg / mL was spin-coated onto the photoelectric functional layer to obtain a pre-fabricated electron transport layer. Far-infrared light was applied to the surface of the pre-fabricated electron transport layer to irradiate it with far-infrared light. The wavelength of the far-infrared light was 30 μm, the power of the far-infrared irradiation was 4000 W, and the irradiation time was 1 min. Then, it was heat-treated at 80 °C for 10 min to obtain an electron transport layer with a thickness of 50 nm. The electron transport layer includes inorganic nanoparticles with a sheet-like structure.

[0125] Ag was deposited on the electron transport layer to obtain a cathode with a thickness of 60 nm;

[0126] The optoelectronic device is obtained by encapsulating the device in an environment where both oxygen and water content are below 0.1 ppm. In this embodiment, the optoelectronic device is a positive quantum dot light-emitting diode.

[0127] Example 2

[0128] This embodiment is basically the same as Embodiment 1, except that in this embodiment, the initial inorganic nanoparticles are ZnMgO (Mg molar percentage content is 10%).

[0129] Comparative Example 1

[0130] This comparative example is basically the same as Example 1, except that the method for preparing the electron transport layer in this comparative example includes:

[0131] An ethanol solution of initial inorganic nanoparticles ZnO with a concentration of 30 mg / mL was spin-coated onto the optoelectronic functional layer, and heat-treated at 80 °C for 10 min to obtain an electron transport layer with a thickness of 50 nm.

[0132] TEM was performed on the electron transport layers of Example 1 and Comparative Example 1, respectively, and the results were obtained. Figure 6 and Figure 7 TEM image.

[0133] Depend on Figure 6 and Figure 7 It can be seen that the inorganic nanoparticles in the electron transport layer obtained by far-infrared irradiation in Example 1 have larger particle sizes and form a continuous sheet-like structure.

[0134] The optoelectronic devices of Examples 1-2 and Comparative Example 1 were subjected to lifetime T95@1000nit tests, luminous efficiency CE tests, and device turn-on / turn-off efficiency fluctuation tests, respectively. The test results are shown in Table 1.

[0135] The lifetime test method T95@1000nit is as follows: Under a constant current of 2mA, the time required for the brightness of the device to decrease to a certain percentage of its maximum brightness is defined as T95. This lifetime is the measured lifetime. To shorten the testing cycle, device lifetime testing is usually performed at high brightness by accelerating device aging, and the lifetime at high brightness is obtained by fitting the extended exponential decay brightness decay formula. For example, the lifetime at 1000nit is measured as T95@1000nit. The specific calculation formula is as follows:

[0136]

[0137] Among them, T95 L For longer lifespan at low brightness, T95 H For the measured lifetime under high brightness, L H To accelerate the device to its maximum brightness, L L The value is 1000 nits, and A is the acceleration factor. In this experiment, the lifetime of several groups of green QLED devices under rated brightness was measured, and the value of A was found to be 1.7.

[0138] The luminous efficacy CE test method is as follows: using the Fostar FPD optical property measurement equipment, an efficiency test system is built by controlling the QE PRO spectrometer, Keithley 2400, and Keithley 6485 with LabVieW, to measure parameters such as voltage, current, brightness, and emission spectrum, and then calculate the luminous efficacy.

[0139] The efficiency fluctuation test method for device on / off is as follows: the device is operated at 1000 nits, turned off for 1 minute and then restarted, and the efficiency change is recorded.

[0140] Table 1:

[0141]

[0142] As shown in Table 1:

[0143] Compared to the optoelectronic device in Comparative Example 1, the optoelectronic devices in Examples 1 and 2 exhibit longer lifetimes, higher luminous efficiency, and lower efficiency fluctuations during device on / off states. Therefore, the optoelectronic device of this application demonstrates longer lifetimes, higher luminous efficiency, and better operational stability. This may be because, during the fabrication of the optoelectronic device described in this application, the electron transport layer is prepared by far-infrared irradiation of a pre-fabricated electron transport layer. This far-infrared irradiation accelerates crystal plane contact and collisions between initial inorganic nanoparticles. By applying energy to the initial inorganic nanoparticles, the crystal planes of adjacent initial inorganic nanoparticles rotate, reconstruct, and form a larger, continuous sheet-like structure (see reference). Figure 6 The use of inorganic nanoparticles results in a relatively large particle size in the prepared electron transport layer, which stabilizes the physical and / or chemical properties of the inorganic nanoparticles, such as band gap and confinement effect. This leads to a higher density, higher continuity, higher uniformity, and lower surface roughness in the prepared electron transport layer, reducing the mobility differences between different regions of the electron transport layer, thereby improving the lifespan and transport stability of the electron transport layer, and ultimately improving the luminous efficiency, lifespan, and operational stability of optoelectronic devices.

[0144] The technical solutions provided by the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. An optoelectronic device, characterized in that, It includes a first electrode, a photoelectric functional layer, a charge carrier functional layer and a second electrode stacked in sequence, wherein the charge carrier functional layer includes inorganic nanoparticles, the inorganic nanoparticles have a sheet-like structure and the average sheet diameter of the sheet-like structure is greater than or equal to 50 nm.

2. The optoelectronic device as described in claim 1, characterized in that, The roughness Ra of the carrier functional layer is less than or equal to 0.8; and / or The porosity of the carrier functional layer is 10% to 25%; and / or The average thickness of the sheet-like structure is 1–10 nm; and / or The inorganic nanoparticles are made of N-type inorganic semiconductor materials.

3. The optoelectronic device as described in claim 2, characterized in that, The first electrode is the anode, the second electrode is the cathode, and the carrier functional layer is the electron functional layer; and / or The optoelectronic functional layer is a light-emitting layer; and / or The charge carrier functional layer is composed of the inorganic nanoparticles; and / or The porosity of the carrier functional layer is 15–25%; and / or The roughness Ra of the carrier functional layer is less than or equal to 0.

4.

4. The optoelectronic device as described in claim 3, characterized in that, The electronic functional layer is an electron transport layer or an electron injection layer; and / or The N-type inorganic semiconductor material includes one or more of a first doped metal oxide, a first undoped metal oxide, a group IIB-VIA semiconductor material, a group IIIA-VA semiconductor material, and a group IB-IIIA-VIA semiconductor material. The first undoped metal oxide includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The first doped metal oxide includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the metal oxide includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga; the IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, and CdS; the IIIA-VA group semiconductor material includes one or more of InP and GaP; and the IB-IIIA-VIA group semiconductor material includes one or more of CuInS and CuGaS. The molar percentage of the doping element in the first doped metal oxide is 5-15%; and / or The anode and the cathode each independently comprise a doped metal oxide particle electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal element electrode, or an alloy electrode. The doped metal oxide particle electrode is made of one or more of the following materials: indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode comprises one or more of the following: AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, or ZnS / Al / ZnS. The metal element electrode is made of one or more of the following: Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba; and / or The materials of the photoelectric functional layer include one or more of organic light-emitting materials and quantum dot light-emitting materials. The organic light-emitting materials include one or more of the following: 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid local charge transfer excited state materials, excitopolymer light-emitting materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives.The quantum dot luminescent material comprises one or more of the following: single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The materials of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots are each independently selected from one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, and ZnO. One or more of the following compounds: STe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, wherein the group IV-VI compounds include SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, and PbSeS. PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, and the III-V compound includes one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and GaAlN. One or more of As, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, wherein the I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2; wherein the perovskite semiconductor material includes doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors, wherein the general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs; + Ions, where M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of the following; and / or The optoelectronic device further includes a hole transport layer located between the anode and the optoelectronic functional layer. The hole transport layer is made of materials including 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'bis(4-butylphenyl)-N,N'-bis(phenyl)biphenylamine), N,N'-bis( 3-Methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4 -4'-Diamine, SpiroNPB, Poly(phenylenevinylene), Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], Poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 1,3-di(carbazole-9-yl)benzene, Polyaniline, Polypyrrole, Poly(p)phenylenevinylene, Aromatic tertiary amines, Polynuclear aromatic tertiary amines Amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylates and their derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; and / or The optoelectronic device further includes a hole injection layer located between the anode and the optoelectronic functional layer. The hole injection layer is made of one or more of the following materials: 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, PEDOT, PEDOT:PSS, PEDOT:PSS derivatives doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinone dimethyl ether, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide.

5. A method for fabricating an optoelectronic device, characterized in that, Includes the following steps: A photoelectric device preform is provided, the photoelectric device preform including a first electrode; Initial inorganic nanoparticles are deposited on the optoelectronic device preform to obtain a pre-fabricated charge carrier functional layer. The pre-fabricated charge carrier functional layer is then subjected to far-infrared irradiation to convert the initial inorganic nanoparticles into inorganic nanoparticles, thus obtaining the charge carrier functional layer again. A second electrode is disposed on the charge carrier functional layer to obtain a photoelectric device; or, A photoelectric device preform is provided, the photoelectric device preform including a second electrode; Initial inorganic nanoparticles are deposited on the optoelectronic device preform to obtain a pre-fabricated charge carrier functional layer. The pre-fabricated charge carrier functional layer is then subjected to far-infrared irradiation to convert the initial inorganic nanoparticles into inorganic nanoparticles, thus obtaining the charge carrier functional layer again. A first electrode is disposed on the charge carrier functional layer to obtain an optoelectronic device.

6. The preparation method according to claim 5, characterized in that, The wavelength of the far-infrared light used in the far-infrared irradiation is 10–50 μm; and / or The power of the far-infrared irradiation is 4000–5000W; and / or The far-infrared irradiation time is 30–60 min; and / or The initial inorganic nanoparticles have a particulate structure, and the average particle size of the particulate structure is 2–8 nm; and / or The inorganic nanoparticles have a sheet-like structure, and the average sheet diameter of the sheet-like structure is greater than or equal to 50 nm; and / or The material of the initial inorganic nanoparticles and the material of the inorganic nanoparticles are N-type inorganic semiconductor materials; and / or The first electrode is the anode, the second electrode is the cathode, and the carrier functional layer is the electron functional layer; and / or The porosity of the carrier functional layer is 10% to 25%; and / or The roughness Ra of the carrier functional layer is less than or equal to 0.

8.

7. The preparation method according to claim 6, characterized in that, The average thickness of the sheet-like structure is 1–10 nm; and / or The porosity of the carrier functional layer is 15–25%; and / or The roughness Ra of the carrier functional layer is less than or equal to 0.4; and / or The electronic functional layer is an electron transport layer or an electron injection layer; and / or The N-type inorganic semiconductor material includes one or more of a first doped metal oxide, a first undoped metal oxide, a group IIB-VIA semiconductor material, a group IIIA-VA semiconductor material, and a group IB-IIIA-VIA semiconductor material. The first undoped metal oxide includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the first doped metal oxide includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The group IIB-VIA semiconductor material includes one or more of ZnS, ZnSe, and CdS. The group IIIA-VA semiconductor material includes one or more of InP and GaP. The group IB-IIIA-VIA semiconductor material includes one or more of CuInS and CuGaS. The molar percentage of the doping element in the first doped metal oxide is 5% to 15%.

8. The preparation method according to claim 5, characterized in that, The deposition of initial inorganic nanoparticles includes: dispersing initial inorganic nanoparticles in a solvent to obtain an initial inorganic nanoparticle dispersion, and depositing the initial inorganic nanoparticle dispersion; and / or The process includes heat treatment after the prefabricated carrier functional layer is subjected to far-infrared irradiation and before the carrier functional layer is obtained.

9. The preparation method according to claim 8, characterized in that, The heat treatment temperature is 70–80°C; and / or The heat treatment time is 5 to 10 minutes; and / or The initial inorganic nanoparticle dispersion has a concentration of 10–50 mg / mL; and / or The solvent includes one or more of alcohol solvents and alcohol ether solvents, wherein the alcohol solvent includes one or more of ethanol, isopropanol, butanol, n-pentanol, and isoamyl alcohol, and the alcohol ether solvent includes ethylene glycol monomethyl ether.

10. The preparation method according to claim 5, characterized in that, The optoelectronic device preform further includes an optoelectronic functional layer disposed on the first electrode, and the charge carrier functional layer is disposed on the optoelectronic functional layer; or The optoelectronic device preform further includes a hole transport layer and a photoelectric functional layer sequentially stacked on the first electrode, wherein the charge carrier functional layer is disposed on the photoelectric functional layer; or The optoelectronic device preform also includes a hole injection layer, a hole transport layer and an optoelectronic functional layer that are sequentially stacked on the first electrode, and the carrier functional layer is disposed on the optoelectronic functional layer. or The provision of the first electrode on the charge carrier functional layer includes: sequentially providing a stacked photoelectric functional layer and a first electrode on the charge carrier functional layer; or The provision of the first electrode on the carrier functional layer includes: sequentially providing a photoelectric functional layer, a hole transport layer, and the first electrode on the carrier functional layer; or The provision of the first electrode on the carrier functional layer includes: sequentially providing a photoelectric functional layer, a hole transport layer, a hole injection layer, and the first electrode on the carrier functional layer.

11. A display device, characterized in that, It includes the optoelectronic device according to any one of claims 1 to 4, or the optoelectronic device prepared by the preparation method according to any one of claims 5 to 10.

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