Integrated photonic circuits and kits consisting of such integrated photonic circuits and optical fibers

Abstract

The invention relates to an integrated photonic circuit (10) comprising at least one waveguide (12) for guiding light and at least one coupling device (14) for coupling light into and / or out of the waveguide (12), wherein the waveguide (12) has at least one end (16) for coupling light in and / or out, wherein the waveguide (12) has a taper section (18) at its end (16), wherein the taper section (18) extends at least partially, in particular completely, in a longitudinal direction (11), wherein the waveguide (12) is designed to taper along the taper section (18) towards the end (16) of the waveguide (12), wherein the taper section (18) has a first section (20) in which the waveguide (12) is designed as a ridge waveguide, wherein the taper section (18) has a second section (22) adjoining the first section (20), in which the waveguide (12) is designed as a strip waveguide, wherein the coupling device (14) at least partially covers the taper section (18), in particular the second section (22), in particular wherein the coupling device (14) is designed to taper at least partially, in particular completely, in the longitudinal direction (11) towards the end (16) of the waveguide (12). The invention also relates to a kit consisting of at least one such integrated photonic circuit and at least one optical fiber (36).

Description

Technical Field

[0001] The present invention relates to an integrated photonic circuit having the features of claim 1, and a kit having the features of claim 13 consisting of at least one such integrated photonic circuit and at least one optical fiber. Background Technology

[0002] One of the most common methods for coupling light into or out of a chip-integrated waveguide using optical fibers is called edge coupling. In edge coupling, the corresponding ends of the fiber and the waveguide are aligned in the same direction.

[0003] To achieve efficient fiber-to-chip interfaces for integrated photonic circuits, the waveguide mode must match the fiber mode to achieve high mode overlap. This can be achieved using tapered waveguide transition sections and / or connecting sections.

[0004] CN 115793140 A discloses a tapered waveguide with a coupling device, wherein the waveguide and the coupling device gradually taper in opposite directions to improve coupling efficiency. The implementation of such a waveguide transition section is usually very complex. Summary of the Invention

[0005] Therefore, the object of the present invention is to provide an integrated photonic circuit and a kit consisting of at least one integrated photonic circuit and at least one optical fiber, wherein the manufacturing can be achieved by simple means and the coupling efficiency can be optimized.

[0006] The aforementioned problems can be solved by the integrated photonic circuit of claim 1. This integrated photonic circuit includes at least one waveguide for guiding light and at least one coupling device for coupling light into and / or out of the waveguide. The waveguide may have a cross-section of 0.6 μm × 1 μm.

[0007] The waveguide has at least one end for coupling in and / or coupling out light. The waveguide has a tapered section at its end. The tapered section extends partially, and particularly entirely, in the longitudinal direction. The waveguide is designed to taper gradually towards the end of the waveguide along the tapered section. The tapered section may have a length of 400 μm.

[0008] The waveguide's tapered section has a first section and a second section. In the first section, the waveguide is designed as a ridge waveguide (half-etched). In the second section, the waveguide is designed as a strip waveguide (fully etched). The first and second sections are adjacent to each other. The ridge waveguide (half-etched) waveguide can be arranged on a waveguide layer whose thickness continuously and steadily decreases along the longitudinal direction until it is zero, particularly at the transition between the first and second sections. In other words, no waveguide layer is formed in the second section (or the thickness of the waveguide layer is zero in the second section).

[0009] The coupling device at least partially covers the tapering section, particularly the second section. The coupling device is designed to taper at least partially, particularly completely, along the longitudinal direction toward the end of the waveguide. The waveguide and the coupling device are designed to taper, particularly, in opposite directions.

[0010] This enables broadband and efficient coupling. This allows for applications such as quantum computers and telecommunications systems, which rely on high coupling efficiency to ensure reliable and accurate transmission of optical signals between components. Waveguide and fiber modes can be switched with high coupling efficiency.

[0011] By transitioning to extremely narrow strip waveguides (achieved through a full etching step of the waveguide layer, such as lithium niobate on insulator (LNOI)), light can be "squeezed" from the waveguide (high refractive index) into the coupling device or a specific cladding (low refractive index). This expansion of the waveguide mode (within the coupling device) enables efficient coupling between the waveguide and the optical fiber.

[0012] According to the extended scheme of the integrated photonic circuit, the waveguides and / or coupling devices in the tapered section can all be designed to taper gradually in width along the longitudinal direction. Alternatively or additionally, the waveguides and / or coupling devices in the tapered section can all be designed to taper gradually in height along the longitudinal direction. In other words, the width and / or height of the waveguides and / or coupling devices in the tapered section can decrease along the longitudinal direction in the corresponding taper direction.

[0013] This allows for adjustment of the corresponding modes in the waveguide or coupling device in both height (vertical) and width (horizontal). This enables (nearly) adiabatic gradual narrowing or switching of modes.

[0014] Depending on the expansion scheme of the integrated photonic circuit, the tapered section can be continuously tapered along the longitudinal direction. Alternatively or additionally, the coupling device can be designed to be continuously tapered along the longitudinal direction.

[0015] This allows for a gradual reduction or transition of the mode (nearly) adiabatic. To achieve this, the waveguide's cross-section can be changed sufficiently slowly along the longitudinal direction (towards the waveguide tip) to satisfy the adiabatic transmission conditions. This avoids or at least reduces losses.

[0016] According to the extended scheme of the integrated photonic circuit, the integrated photonic circuit can include at least two gaps. The gaps can extend along the longitudinal direction. A tapered section and / or coupling device can be arranged, particularly centrally, between the two gaps. These two gaps can laterally abut the tapered section and / or coupling device, respectively, relative to the longitudinal direction. These gaps can be designed as air gaps. The gaps can be formed as etched trenches. These gaps can at least partially, and particularly completely, penetrate the waveguide layer and / or the chip.

[0017] This will further improve the model guidance.

[0018] According to the extended scheme of integrated photonic circuits, the coupling device may be at least partially, and in particular entirely, made of at least one polymer and / or silicon nitride.

[0019] Therefore, a simple method can be used to implement the coupling device.

[0020] Based on the extended scheme of integrated photonic circuits, the coupling device can be manufactured using 3D printing technology.

[0021] This allows for the simple fabrication of coupling devices. In this case, the coupling device (e.g., composed of a polymer) can be easily printed onto a chip.

[0022] According to the extended scheme of the integrated photonic circuit, the coupling device can have two side sections. A tapered section, particularly a second section, can be arranged at least partially between the two side sections. The side sections and the tapered section arranged between the two side sections, particularly the second section, can be at least partially covered by a capping layer.

[0023] Therefore, the coupling device can be implemented using a simple method. In this case, the polymer printing process can be omitted. Thus, lateral (transverse) pattern guidance along the width direction can be achieved through two side sections, and vertical pattern guidance along the height direction can be achieved through the overlay layer.

[0024] According to the extended scheme of the integrated photonic circuit, the side sections can be made at least partially, and particularly entirely, of silicon dioxide. The capping layer can be made at least partially, and particularly entirely, of silicon nitride.

[0025] This allows for optimal mode constraint, guidance, and transition within the coupling device.

[0026] Depending on the expansion scheme of the integrated photonic circuit, the capping layer can be composed of multiple alternating layers of silicon dioxide and silicon nitride. For example, the individual layers can be deposited using standard CVD (chemical vapor deposition) methods.

[0027] This can prevent or at least reduce stress in the (relatively thick) silicon nitride capping layer, which could otherwise lead to cracking of the capping layer.

[0028] According to the extended scheme of integrated photonic circuits, the coupling device can have a coupling surface for coupling light into and / or out of the coupling device. The coupling surface can be arranged at an angle to the longitudinal direction, the width direction, and / or the height direction. This angle can be the Brewsterwinkel angle.

[0029] At the Brewster angle, reflection of parallel-polarized light is minimal (theoretically, there is no reflection), thus maximizing transmission. The Brewster angle depends on the refractive indices of the materials at the interface. The Brewster angle can be calculated using the following formula:

[0030] Where θ is the Brewster angle, n1 is the refractive index of the material from which the light rays exit, and n2 is the refractive index of the material into which the light rays enter.

[0031] Therefore, Brewster's angle (n) for the glass-air transition 玻璃 =1.5 and n 空气 =1) is approximately 34°. For silicon nitride-glass transitions, the Brewster angle is 54°. The Brewster angle can be used to calculate transitions between different materials. Therefore, the geometry of the coupling device, especially the coupling surface, can be adapted to different materials.

[0032] This can prevent or at least reduce Fresnel loss (due to differences in refractive index).

[0033] According to the expansion scheme of integrated photonic circuits, the coupling device can be arranged on the chip. The coupling device can protrude from the chip at least partially, and particularly in the longitudinal direction, with the coupling surface.

[0034] The chip can consist of a silicon layer as a substrate and a thin silicon dioxide layer (buffer layer) disposed on the silicon layer. A waveguide layer can be disposed on the silicon dioxide layer. In other words, a silicon dioxide layer (buffer layer) can be disposed between the waveguide layer and the chip substrate (silicon layer).

[0035] This allows the optical fiber to contact the coupling surface of the coupling device, where the optical fiber is arranged at intervals relative to the chip. This improves the tolerance during the contact process between the optical fiber and the coupling surface of the coupling device. It can prevent or at least reduce the negative impact (or interference) caused by defects (or their geometry) that may exist on the chip or on the chip.

[0036] According to the improved scheme of integrated photonic circuits, the waveguide (or waveguide layer) can be formed from lithium niobate, silicon nitride, barium titanate, aluminum oxide, aluminum nitride, titanium dioxide, silicon carbide, silicon, gallium phosphide, silicon oxynitride, gallium arsenide, gallium nitride, indium phosphide, chalcogenides, lithium tantalate, diamond and / or electroactive polymer compounds.

[0037] This allows waveguides to be used flexibly and adapted to different applications and materials.

[0038] According to the extended scheme of integrated photonic circuits, the tapered section, especially the second section, can be fabricated at least partially, and especially completely, by ion thinning (ion beam milling) or cathode sputtering.

[0039] This allows for the processing or thinning of the waveguide layer thickness. Therefore, the waveguide layer thickness can be continuously reduced along the longitudinal direction (towards the coupling device) in a simple and precise manner. Thus, with a single (subsequent) etching step, a first segment of the waveguide with a ridge structure and a second segment with a strip structure can be achieved. Other etching steps can be omitted.

[0040] If the thickness of the waveguide layer reduced by ion thinning or cathode sputtering is less than the etching depth of the etching step for forming the waveguide in the second segment, then both complete etching of the strip waveguide in the second segment and partial etching of the ridge waveguide in the first segment can be achieved.

[0041] The aforementioned objective can be achieved by a kit having the features of claim 13. This kit includes at least one integrated photonic circuit as described above and at least one optical fiber. The optical fiber may be a single-mode optical fiber.

[0042] For the advantages that can be achieved as a result, please refer to the corresponding description of integrated photonic circuits. The measures described and / or further explained below in relation to integrated photonic circuits can be used to further design the kit.

[0043] According to the extended version of this kit, the optical fiber can have an end with an optical fiber facet for coupling light out of and / or into the optical fiber. The optical fiber facet and the coupling facet of the coupling device can be designed to be parallel to each other.

[0044] This allows for precise alignment or contact between the optical fiber and the coupling device. This enables a precise transition between the coupling surface and the fiber surface.

[0045] According to the extended scheme of the kit, multiple waveguides and / or multiple optical fibers can be arranged adjacent to each other on the integrated photonic circuit.

[0046] For example, this can be used to implement waveguides or fiber arrays arranged in parallel onto a (single) integrated photonic circuit. Attached Figure Description

[0047] Other features, details, and advantages of the invention may be derived from the wording of the claims and the following description of exemplary embodiments in conjunction with the accompanying drawings. In the drawings: Figure 1 A partial perspective view of the integrated photonic circuit according to the first embodiment is shown; Figure 2 A partial cross-sectional view of the integrated photonic circuit according to the second embodiment is shown; Figure 3 A partial cross-sectional view of the integrated photonic circuit according to the third embodiment is shown; Figure 4 A partial side view of the integrated photonic circuit according to the fourth embodiment is shown; Figure 5 A partial side view of the integrated photonic circuit according to the fifth embodiment is shown; Figure 6 A partial top view of the integrated photonic circuit according to the sixth embodiment is shown; Figure 7 A partial top view of the integrated photonic circuit according to the seventh embodiment is shown; Figure 8 A partial perspective cross-sectional view of the integrated photonic circuit according to the eighth embodiment is shown. Detailed Implementation

[0048] In the following description and figures, corresponding components and elements are labeled with the same reference numerals. For clarity, not all reference numerals are shown in all figures.

[0049] Figure 1 A portion of a perspective view of the integrated photonic circuit 10 according to the first embodiment is shown.

[0050] The integrated photonic circuit 10 includes at least one waveguide 12 for guiding light and at least one coupling device 14 for coupling light into and / or out of the waveguide 12. Figure 1In this configuration, waveguide 12 is exposed. In other words, air or a vacuum can be disposed above waveguide 12. For example, in practical applications, after forming waveguide 12 and / or connecting coupling device 14, a covering layer 26 (see [link to documentation]) can be applied. Figure 2 The capping layer 26 is composed, for example, of silica or a polymer adhesive. The capping layer 26 can protect the waveguide 12 and improve its optical performance.

[0051] Waveguide 12 has at least one end 16 for coupling in and / or coupling out light. Waveguide 12 has a tapered section 18 at its end 16. The tapered section 18 extends at least partially, and particularly entirely, along the longitudinal direction 11. Waveguide 12 is designed to taper gradually towards its end 16 along the tapered section 18. In other words, the cross-section of waveguide 12 gradually decreases towards its end 16.

[0052] The tapered section 18 has a first section 20 and a second section 22. In the first section 20, waveguide 12 is designed as a ridge waveguide (half-etched). In the second section 22, waveguide 12 is designed as a strip waveguide (fully etched). The first section 20 and the second section 22 are adjacent to each other.

[0053] The coupling device 14 partially covers the tapered section 18, and in the current embodiment, in particular partially covers the second section 22. It is also conceivable that the coupling device 14 could completely cover the tapered section 18, and in particular the second section 22. In the current embodiment, the coupling device 14 is designed to taper partially along the longitudinal direction 11 toward the end 16 of the waveguide 12. It is also conceivable that the coupling device 14 could be designed to taper completely along the longitudinal direction 11 toward the end 16 of the waveguide 12. The tapered sections 18 of the coupling device 14 and the waveguide 12 are designed to taper in opposite directions.

[0054] In the current embodiment, waveguide 12 tapers gradually in both the width direction 13 and the height direction 15 along the longitudinal direction 11. In other words, the height and width of waveguide 12 decrease towards its end 16. Similarly, in the current embodiment, coupling device 14 tapers gradually in both the width direction 13 and the height direction 15 along the longitudinal direction. In other words, the height and width of coupling device 14 decrease towards its end 16.

[0055] Therefore, mode matching between the modes in waveguide 12 and the modes in coupling device 14 can be achieved along the width direction 13 and the height direction 15.

[0056] In the current embodiment, the taper section 18 and the coupling device 14 are designed to taper continuously along the longitudinal direction 11. The taper section 18 and the coupling device 14 of the waveguide 12 are designed to taper in opposite directions along the longitudinal direction 11. In particular, in the waveguide 12, the transition of the waveguide 12 (or its cross-section) from the first section 20 to the second section 22 is continuous and stable.

[0057] The tapered section 18, and especially the second section 22, can be manufactured at least partially, and especially entirely, by means of ion thinning or cathode sputtering.

[0058] In the current embodiment, the coupling device 14 is made of a polymer. The coupling device 14 can be manufactured using a 3D printing process. For example, the coupling device 14 can be implemented by printing the polymer onto, for example, a chip 32.

[0059] In the current embodiment, the coupling device 14 is disposed on the chip 32. In the current embodiment, the waveguide 12 is disposed directly on the chip 32 as a strip waveguide in the second segment 22. The waveguide 12, together with the waveguide layer 21, is disposed on the chip 32 as a ridge structure (ridge waveguide) in the first segment 20. The thickness of the waveguide layer 21 decreases continuously along the longitudinal direction 11.

[0060] In this current embodiment, chip 32 consists of a silicon layer as a substrate and a thin silicon dioxide layer (buffer layer) disposed on the silicon layer. In this current embodiment, waveguide layer 21 is disposed on the silicon dioxide layer. In other words, in this current embodiment, a silicon dioxide layer (buffer layer) is disposed between waveguide layer 21 and the substrate (silicon layer) of chip 32. For clarity, neither the substrate (silicon layer) nor the buffer layer (silicon dioxide layer) of chip 32 is shown.

[0061] Waveguide 12 and / or waveguide layer 21 may be formed of lithium niobate, silicon nitride, barium titanate, aluminum oxide, aluminum nitride, titanium dioxide, silicon carbide, silicon, gallium phosphide, silicon oxynitride, gallium arsenide, gallium nitride, indium phosphide, chalcogenides, lithium tantalate, diamond and / or electroactive polymer compounds, respectively.

[0062] The coupling device 14 has a coupling surface 28 for coupling light into and / or coupling light out of the coupling device 14. An optical fiber 36 is used for coupling light into or out. The optical fiber 36 has an end 38 with an fiber surface 40 for coupling light out of and / or into the optical fiber 36 (see [link to product]). Figures 4 to 7 In this case, the fiber surface 40 of the fiber 36 and the coupling surface 28 of the coupling device 14 are designed to be parallel to each other.

[0063] On the integrated photonic circuit 10, multiple waveguides 12 and / or multiple optical fibers 36 may be arranged adjacent to each other (e.g., in the form of an array) (not shown).

[0064] Figure 2 A portion of a cross-sectional view of the integrated photonic circuit according to the second embodiment is shown. Figure 2 A cross-section perpendicular to the longitudinal direction 11 is shown. The second embodiment is... Figure 1 The first embodiment shown has the following differences: The coupling device 14 has two side sections 24. A tapered section 18, particularly a second section 22, is at least partially disposed between the two side sections 24. The side sections 24 and the waveguide 12 sections located between the side sections 24 are respectively disposed on the chip 32. In the current embodiment, a cover layer 26 at least partially covers the two side sections 24 and the waveguide 12 sections disposed between the two side sections 24.

[0065] The capping layer 26 may be applied after the waveguide 12 has been formed or fabricated. The capping layer 26 may be uniformly deposited on the waveguide layer 21 or the waveguide 12. This allows the profile of the waveguide 12 and / or the profile of the side segments 24 to be transferred upwards to the surface of the capping layer 26 (relative to the height direction 15), such as... Figure 2 As shown.

[0066] The side section 24 may be made at least partially, and in particular entirely, of silicon nitride. The capping layer 26 may be made at least partially, and in particular entirely, of silicon nitride.

[0067] Therefore, mode matching (or mode guidance) between the modes in waveguide 12 and the modes in coupling device 14 can be achieved through the two side sections 24 along the width direction 13. Mode matching (or mode guidance) between the modes in waveguide 12 and the modes in coupling device 14 can be achieved through the cladding layer 26 along the height direction 15.

[0068] Figure 3 A partial cross-sectional view of the integrated photonic circuit according to a third embodiment is shown. The third embodiment and... Figure 2 The second embodiment shown has the following differences: In the current embodiment, the capping layer 26 is formed of a plurality of alternating silicon dioxide and silicon nitride layers. In the current embodiment, the bottom layer and every other layer are formed as silicon nitride layers 27. Silicon dioxide layers 29 are disposed between the silicon nitride layers 27. This prevents or at least reduces stress in the capping layer 26.

[0069] Figure 4 A partial side view of the integrated photonic circuit 10 according to a fourth embodiment is shown. The fourth embodiment is related to... Figure 1The first embodiment shown has the following differences: In the current embodiment, the coupling surface 28 of the coupling device 14 is arranged obliquely relative to the longitudinal direction 11 and the height direction 15. In the current embodiment, the surface normal 17 of the coupling surface 28 forms an angle 30 with the longitudinal direction 11. Thus, the coupling surface 28 is oriented obliquely with respect to the height direction 15 at an angle 30. In the current embodiment, angle 30 corresponds to Brewster's angle.

[0070] Since the fiber surface 40 and the coupling surface 28 are arranged parallel to each other, the fiber surface 40 is oriented similarly to the coupling surface 28 (i.e., it is arranged at an angle in the same manner as the coupling surface 28). In the current embodiment, the fiber surface 40 and the coupling surface 28 are arranged spaced apart from each other. In the current embodiment, the coupling device 14 is flush with the lower edge of the chip 32 relative to the height direction 15.

[0071] Figure 5 A partial side view of the integrated photonic circuit 10 according to a fifth embodiment is shown. The fifth embodiment is related to... Figure 4 The fourth embodiment shown has the following differences: In the current embodiment, the fiber surface 40 and the coupling surface 28 (see Figure 4 The coupling device 14 protrudes from the chip 32 along the longitudinal direction 11. Thus, the fiber surface 40 and the coupling surface 28 can contact each other, while the fiber 36 will not contact the chip 32. This ensures that the contact between the fiber surface 40 and the coupling surface 28 is not negatively affected or interfered with by the chip 32 or any irregularities 33 that may exist on the chip 32.

[0072] Figure 6 A partial top view of the integrated photonic circuit 10 according to the sixth embodiment is shown. The sixth embodiment is related to... Figure 5 The fifth embodiment shown has the following differences: In the current embodiment, the coupling surface 28 of the coupling device 14 is arranged obliquely relative to the longitudinal direction 11 and the width direction 13. In the current embodiment, the surface normal 17 of the coupling surface 28 forms an angle 30 with the longitudinal direction 11. Thus, the coupling surface 28 is oriented obliquely with respect to the width direction 13 at an angle 30. In the current embodiment, angle 30 corresponds to Brewster's angle.

[0073] Since the fiber surface 40 and the coupling surface 28 are arranged parallel to each other, the fiber surface 40 is oriented similarly to the coupling surface 28 (i.e., it is arranged at an angle in the same way as the coupling surface 28).

[0074] Figure 7 A partial top view of the integrated photonic circuit 10 according to the seventh embodiment is shown. The seventh embodiment and... Figure 6 The sixth embodiment shown has the following differences: The fiber surface 40 and the coupling surface 28 are arranged at intervals.

[0075] Figure 8 A portion of a cross-sectional view of the integrated photonic circuit 10 according to the eighth embodiment is shown. Figure 8 A cross-section transverse to the longitudinal direction 11 is shown. Eighth embodiment and... Figure 2 The second embodiment shown has the following differences: In the current embodiment, the integrated photonic circuit 10 has two gaps 37 instead of two side sections 24. The two gaps 37 extend along the longitudinal direction 11. In other words, the gaps 37 are oriented parallel to the longitudinal direction 11. Tapered sections 18 and / or coupling devices 14 may be arranged particularly centrally between the two gaps 37. In the current embodiment, a (silicon) volume is left in the chip 32 below the two gaps 37 (relative to the height direction 15). This can minimize optical loss and further improve mode matching.

[0076] The integrated photonic circuit 10 and optical fiber 36 shown in the figure can each represent a kit 34. The integrated photonic circuit 10 and the optical fiber 36 according to the above embodiment can together constitute the kit 34.

Claims

1. An integrated photonic circuit (10) comprising at least one waveguide (12) for guiding light and at least one coupling device (14) for coupling light into and / or coupling light out of the waveguide (12), in, The waveguide (12) has at least one end (16) for coupling in and / or coupling out light. The waveguide (12) has a tapered section (18) at its end (16). The tapering section (18) extends at least partially, and particularly entirely, along the longitudinal direction (11). The waveguide (12) is designed to taper gradually towards the end (16) of the waveguide (12) along the tapering section (18). The tapered section (18) has a first section (20), in which the waveguide (12) is designed as a ridge waveguide. The tapered section (18) has a second section (22) adjacent to the first section (20), in which the waveguide (12) is designed as a strip waveguide. The coupling device (14) at least partially covers the tapered section (18), particularly the second section (22). In particular, the coupling device (14) is designed to taper at least partially, and especially completely, along the longitudinal direction (11) toward the end (16) of the waveguide (12).

2. The integrated photonic circuit (10) according to claim 1, characterized in that, The waveguide (12) and / or the coupling device (14) in the tapering section (18) are designed to taper gradually in the width direction (13) and / or height direction (15) along the longitudinal direction (11).

3. The integrated photonic circuit (10) according to claim 1 or 2, characterized in that, The tapering section (18) and / or the coupling device (14) are designed to taper continuously, at least partially and in particular completely, along the longitudinal direction (11).

4. The integrated photonic circuit (10) according to any one of the preceding claims, characterized in that, The integrated photonic circuit (10) includes at least two gaps (37), wherein the gaps (37) extend along the longitudinal direction (11), and wherein the tapered section (18) and / or the coupling device (14) are arranged between the two gaps (37).

5. The integrated photonic circuit (10) according to any one of the preceding claims, characterized in that, The coupling device (14) is at least partially, and in particular entirely, formed of at least one polymer.

6. The integrated photonic circuit (10) according to any one of the preceding claims, characterized in that, The coupling device (14) is manufactured using 3D printing technology.

7. The integrated photonic circuit (10) according to any one of the preceding claims, characterized in that, The coupling device (14) has two side sections (24), wherein the tapering section (18), in particular the second section (22), is at least partially disposed between the two side sections (24), wherein the side sections (24) and the tapering section (18), in particular the second section (22), disposed between the two side sections (24) are at least partially covered by a covering layer (26).

8. The integrated photonic circuit (10) according to the preceding claims, characterized in that, The side section (24) is at least partially, and in particular entirely, made of silicon dioxide, and the cover layer (26) is at least partially, and in particular entirely, made of silicon nitride.

9. The integrated photonic circuit (10) according to any one of the preceding two claims, characterized in that, The cover layer (26) consists of multiple alternating layers of silicon dioxide and silicon nitride (27, 29).

10. The integrated photonic circuit (10) according to any one of the preceding claims, characterized in that, The coupling device (14) has a coupling surface (28) for coupling light into and / or coupling light out of the coupling device (14), wherein the coupling surface (28) is arranged at an angle (30) relative to the longitudinal direction (11), the width direction (13) and / or the height direction (15), and in particular, wherein the angle (30) is Brewster's angle.

11. The integrated photonic circuit (10) according to any one of the preceding claims, characterized in that, The coupling device (14) is arranged on the chip (32) and protrudes from the chip (32) at least in part, particularly in the direction of the coupling surface (28) along the longitudinal direction (11).

12. The integrated photonic circuit (10) according to any one of the preceding claims, characterized in that, The waveguide (12) and / or waveguide layer (21) are formed of lithium niobate, silicon nitride, barium titanate, aluminum oxide, aluminum nitride, titanium dioxide, silicon carbide, silicon, gallium phosphide, silicon oxynitride, gallium arsenide, gallium nitride, indium phosphide, chalcogenides, lithium tantalate, diamond and / or electroactive polymer compounds.

13. The integrated photonic circuit (10) according to any one of the preceding claims, characterized in that, The tapered section (18), and especially the second section (22), is generated at least partially, and especially entirely, by ion thinning or cathode sputtering.

14. A kit (34) comprising at least one integrated photonic circuit (10) according to any one of the preceding claims and at least one optical fiber (36).

15. The kit (34) according to the preceding claim, characterized in that, The optical fiber (36) has an end (38) with an optical fiber face (40) for coupling light out of the optical fiber (36) and / or coupling light into the optical fiber (36), wherein the optical fiber face (40) and the coupling face (28) of the coupling device (14) are designed to be parallel to each other.

16. The kit (34) according to any one of the preceding two claims, characterized in that, Multiple waveguides (12) and / or multiple optical fibers (36) are arranged adjacent to each other on the integrated photonic circuit (10).

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