An epitaxial stacked full-color micro-led chip and a manufacturing method thereof

Abstract

The application relates to the fields of semiconductor optoelectronic devices and flat panel display technologies, in particular to an epitaxial stacked full-color Micro-LED chip and a manufacturing method thereof. The epitaxial stacked full-color Micro-LED chip provided by the application comprises a support connection layer, on which a plurality of pixels are arranged in an array; each pixel comprises three epitaxial pixel stacks, which are respectively used as red light, green light and blue light sub-pixels. The epitaxial pixel stacks are of the same height and each comprises stacked blue light emitting structures, green light emitting structures and red light emitting structures which are sequentially connected through tunnel junctions; the top surface of each epitaxial pixel stack is provided with spaced p-type sub-pixel electrodes and n-type sub-pixel electrodes, which have different corresponding position relationships and corresponding connection relationships with respect to corresponding sub-pixels; the sub-pixel electrodes in the same sub-pixel have different corresponding position relationships and corresponding connection relationships; and each p-type sub-pixel electrode and each n-type sub-pixel electrode in the same pixel are spaced from each other.

Description

Technical Field

[0001] This application relates to the field of semiconductor optoelectronic devices and flat panel display technology, specifically to an epitaxial stacked full-color Micro-LED chip and its manufacturing method. Background Technology

[0002] In epitaxial stacked full-color Micro-LED structures, a bottom-up epitaxial growth sequence is typically used to fabricate blue, green, and red light-emitting layers and their corresponding carrier injection layers. Tunnel junctions (TJs) are introduced between the light-emitting layers—specifically between the blue and green layers, and between the green and red layers—to utilize their reverse conduction properties and enable the cascading of LED units. After the chip etching process, annealing can be used to activate Mg impurities in the p-GaN layer beneath the tunnel junctions, thereby improving carrier injection efficiency.

[0003] To achieve independent driving and control of red, green, and blue sub-pixels, each sub-pixel needs to be electrically isolated. A common cathode (N-type electrode) design is typically used, but the anode (P-type electrode) of each sub-pixel needs to be brought out and controlled independently. This requires stacking different sub-pixels within the same pixel, etching them separately to expose the blue and green light-emitting structures, while the red light-emitting structure, already on top, does not need etching. These are then connected to the driving circuit via electrodes. However, because the driving circuit is usually located on the same horizontal plane on the circuit board, and the different colored light-emitting structures are at different heights in the stack, the bonding distances between them and the driving circuit differ, requiring different bonding structures. This increases the manufacturing complexity. Furthermore, due to the different bonding structures, the driving requirements and losses between different sub-pixels vary, posing a risk to reliability after aging and potentially causing short circuits due to excessive metal in some areas. Additionally, because the different light-emitting structures have different heights, mass transfer requires transferring the sub-pixel stack structures of different heights in three separate steps, increasing the risk of structural defects during transfer.

[0004] Therefore, a solution is needed to address the challenges of manufacturing epitaxial stacked full-color Micro-LED chips, including the high difficulty of the process and the reduced reliability risk or even short-circuit risk after aging. Summary of the Invention

[0005] This application provides an epitaxial stacked full-color Micro-LED chip and its manufacturing method to solve the problems of high process difficulty, reduced reliability risk after aging, and even short circuit risk of epitaxial stacked full-color Micro-LED chips.

[0006] In one aspect of this application, an epitaxial stacked full-color Micro-LED chip is provided, comprising: a support connection layer; a plurality of full-color Micro-LED pixels arrayed on the support connection layer; each full-color Micro-LED pixel comprising three epitaxial pixel stacks, respectively serving as a red photonics sub-pixel, a green photonics sub-pixel, and a blue photonics sub-pixel; each epitaxial pixel stack having the same height, and each comprising an epitaxial buffer layer, a blue light-emitting structure, a green light-emitting structure, and a red light-emitting structure stacked from the side closest to the support connection layer to the side furthest from the support connection layer; the blue light-emitting structure, the green light-emitting structure, and the red light-emitting structure being connected sequentially through a tunnel junction; and each epitaxial pixel stack having spaced p-type sub-pixel electrodes and n-type sub-pixel electrodes on its top surface; the red... The p-type sub-pixel electrodes of the photon pixel, green photon pixel, and blue photon pixel have different corresponding positional relationships and corresponding connection relationships relative to their respective sub-pixels; the n-type sub-pixel electrodes of the red photon pixel, green photon pixel, and blue photon pixel have different corresponding positional relationships and corresponding connection relationships relative to their respective sub-pixels; the p-type sub-pixel electrodes and n-type sub-pixel electrodes in the same sub-pixel have different corresponding positional relationships and corresponding connection relationships; the p-type sub-pixel electrodes in the same full-color Micro-LED pixel are spaced apart from each other, and the n-type sub-pixel electrodes in the same full-color Micro-LED pixel are spaced apart from each other.

[0007] The epitaxial stacked full-color Micro-LED chip provided in this application stacks different color sub-pixels within the same pixel at the same height. Different sub-pixels are controlled separately by driving electrodes at different positions and with different connection relationships. This allows different color sub-pixels to emit different colors of light, even though their basic light-emitting structures are the same (all containing stacked blue, green, and red light-emitting structures). For example, although the red sub-pixel has the same light-emitting structure as the other two sub-pixels, its driving electrode only drives the red light-emitting structure, thus emitting only red light. The blue and green sub-pixels follow the same principle. Since the epitaxial pixel stacking structure of the three sub-pixels is the same, their heights are also the same. The electrode structures on their top surfaces also have the same height, differing only in their depth and the connection layers. Therefore, when connecting the driving circuit, the electrical connection structures of each sub-pixel can also be of the same height and use the same connection structure. This avoids the reliability reduction and short-circuit risk after aging caused by differences in the electrical connection structures of different sub-pixels. Meanwhile, since the three colors of sub-pixels use the same light-emitting structure, there is no need to perform different structural etching. Although the etching depth of the electrodes is different, requiring one etching step for each depth, due to the existence of multiple etching depths at different n-type and p-type positions for the three colors, some etching depths can be designed to be the same. For example, the n-type etching depth of the red pixel and the p-type etching depth of the green pixel are roughly the same. Therefore, two slots can be etched in one step, thus simplifying the process steps and reducing the complexity of the process. Furthermore, since the light-emitting structure has the same height, mass transfer can be completed in just one step, allowing all three colors of sub-pixels to be transferred in one step, reducing the risk of structural defects caused by the transfer process.

[0008] In some specific embodiments of this application, the epitaxial pixel stack includes a transparent conductive layer located on the side of the red light-emitting structure away from the supporting connection layer; the p-type sub-pixel electrode of the red sub-pixel is located on the surface of the transparent conductive layer; the n-type sub-pixel electrode of the red sub-pixel extends from the surface of the transparent conductive layer into the red light-emitting structure; the p-type sub-pixel electrode of the green sub-pixel extends from the surface of the transparent conductive layer into the red light-emitting structure; the n-type sub-pixel electrode of the green sub-pixel extends from the surface of the transparent conductive layer into the green light-emitting structure; the p-type sub-pixel electrode of the blue sub-pixel extends from the surface of the transparent conductive layer into the green light-emitting structure; and the n-type sub-pixel electrode of the blue sub-pixel extends from the surface of the transparent conductive layer into the blue light-emitting structure.

[0009] In some specific embodiments of this application, the red light-emitting structure includes a stacked red n-type contact layer, a red light-emitting layer, and a red electron blocking layer; the n-type sub-pixel electrode of the red photon pixel extends into the red n-type contact layer and is electrically connected to the red n-type contact layer; the green light-emitting structure includes a stacked green n-type contact layer, a green light-emitting layer, and a green electron blocking layer; a second tunnel junction is disposed between the green electron blocking layer and the red n-type contact layer; the p-type sub-pixel electrode of the green photon pixel extends into the red n-type contact layer and is electrically connected to the red n-type contact layer; the n-type sub-pixel electrode of the green photon pixel extends into the green n-type contact layer and is electrically connected to the green n-type contact layer; the blue light-emitting structure includes a stacked blue n-type contact layer, a blue light-emitting layer, and a blue electron blocking layer; a first tunnel junction is disposed between the blue electron blocking layer and the green n-type contact layer; the p-type sub-pixel electrode of the blue photon pixel extends into the green n-type contact layer and is electrically connected to the green n-type contact layer; the n-type sub-pixel electrode of the blue photon pixel extends into the blue n-type contact layer and is electrically connected to the blue n-type contact layer.

[0010] In some specific embodiments of this application, the blue emitting layer includes a blue InGaN-based multiple quantum well active layer; the green emitting layer includes a green InGaN-based multiple quantum well active layer and an AlN layer on the surface of the green InGaN-based multiple quantum well active layer away from the blue emitting layer; the red emitting layer includes a stacked GaN / InGaN superlattice layer, a blue InGaN-based single quantum well active layer, and a red InGaN-based multiple quantum well active layer; the color emitting structure also includes a p-type GaN layer and a p-type GaN layer stacked on the side of the red electron blocking layer away from the red emitting layer. + Type GaN contact layer, transparent conductive layer is set on p + The GaN contact layer faces away from the red emitting layer.

[0011] In some specific embodiments of this application, the red n-type contact layer is an n-type Si-doped GaN or an n-type Si-doped AlGaN layer; the green n-type contact layer is an n-type Si-doped GaN or an n-type Si-doped AlGaN layer; the blue n-type contact layer is an n-type Si-doped GaN or an n-type Si-doped AlGaN layer; the red electron blocking layer is a p-type AlGaN layer; the green electron blocking layer is a p-type AlGaN layer; the blue electron blocking layer is a p-type AlGaN layer; the support connection layer is a single layer or multiple layers of SiO2 and / or HfO2; an insulating spacer layer is provided between each epitaxial pixel stack to separate adjacent epitaxial pixel stacks; the materials of each p-type sub-pixel electrode and each n-type sub-pixel electrode include one or more combinations of aluminum, silver, rhodium, zinc, gold, germanium, nickel, chromium, platinum, tin, copper, tungsten, palladium, indium, and titanium.

[0012] In another aspect of this application, a method for manufacturing an epitaxial stacked full-color Micro-LED chip is also provided, comprising the following steps: providing a support connection layer; forming a plurality of full-color Micro-LED pixels arranged in an array on the support connection layer; each full-color Micro-LED pixel includes three epitaxial pixel stacks, respectively serving as a red photonics pixel, a green photonics pixel, and a blue photonics pixel; wherein each epitaxial pixel stack has the same height and includes an epitaxial buffer layer, a blue light-emitting structure, a green light-emitting structure, and a red light-emitting structure stacked from the side closer to the support connection layer to the side farther from the support connection layer; the blue light-emitting structure, the green light-emitting structure, and the red light-emitting structure are connected sequentially through a tunnel junction; and in each epitaxial image The top surface of the pixel stack forms spaced p-type and n-type sub-pixel electrodes; wherein, the p-type sub-pixel electrodes of the red, green, and blue sub-pixels have different corresponding positional relationships and corresponding connection relationships relative to their respective sub-pixels; the n-type sub-pixel electrodes of the red, green, and blue sub-pixels have different corresponding positional relationships and corresponding connection relationships relative to their respective sub-pixels; the p-type and n-type sub-pixel electrodes in the same sub-pixel have different corresponding positional relationships and corresponding connection relationships; the p-type sub-pixel electrodes in the same full-color Micro-LED pixel are spaced apart from each other, and the n-type sub-pixel electrodes in the same full-color Micro-LED pixel are spaced apart from each other.

[0013] The method for manufacturing an epitaxial stacked full-color Micro-LED chip provided in this application can be used to manufacture the epitaxial stacked full-color Micro-LED chip provided in this application. Different color sub-pixels within the same pixel are stacked at the same height, and controlled separately through different driving electrodes corresponding to different positions and using different connection relationships. This allows different color sub-pixels to emit different colors of light, even though their basic light-emitting structures are the same (all containing stacks of blue, green, and red light-emitting structures). For example, although the red sub-pixel has the same light-emitting structure as the other two sub-pixels, its driving electrode only drives and controls the red light-emitting structure, thus emitting only red light. The blue and green sub-pixels are similarly handled. Since the epitaxial pixel stacking structure of the three sub-pixels is the same, their height is also the same. The electrode structures on their top surfaces also have the same height, differing only in their depth and the connection layers. Therefore, when connecting the driving circuit, the electrical connection structures of each sub-pixel can also have the same height and use the same connection structure. This avoids the reduced reliability and short-circuit risk after aging caused by differences in the electrical connection structures of different sub-pixels. Meanwhile, since the three color sub-pixels use the same light-emitting structure, there is no need to perform different structural etching. Although the etching depth of the electrodes is different, it can be completed in one step, thus simplifying the process steps and reducing the complexity of the process. Furthermore, since the light-emitting structure has the same height, mass transfer can be completed in just one step, allowing all three color sub-pixels to be transferred in one step, reducing the risk of structural defects caused by the transfer process.

[0014] In some specific embodiments of this application, the steps of providing a support connection layer and forming an array of full-color Micro-LED pixels on the support connection layer include: providing a growth substrate; forming an epitaxial buffer layer on the growth substrate; forming a blue light-emitting structure on the epitaxial buffer layer; forming a first tunnel junction on the side of the blue light-emitting structure facing away from the growth substrate; forming a green light-emitting structure on the side of the first tunnel junction facing away from the blue light-emitting structure; forming a second tunnel junction on the side of the green light-emitting structure facing away from the first tunnel junction; forming a red light-emitting structure on the side of the second tunnel junction facing away from the green light-emitting structure; and forming a transparent layer on the side of the red light-emitting structure facing away from the second tunnel junction. Conductive layer; pixel epitaxial structure is thus formed; a first temporary bonding substrate is provided, and the red light-emitting structure side of the pixel epitaxial structure is oriented towards the first temporary bonding substrate and bonded to the first temporary bonding substrate; the growth substrate is peeled off from the surface of the epitaxial buffer layer; a first connecting layer is formed on the surface of the epitaxial buffer layer; a second temporary bonding substrate is provided; a laser response layer and a laser blocking layer are sequentially formed on one side of the second temporary bonding substrate; a second connecting layer is formed on the surface of the laser blocking layer; the first connecting layer and the second connecting layer are butt-bonded to form a supporting connecting layer; the first temporary bonding substrate is peeled off and removed; in a subsequent process, the second temporary bonding substrate is peeled off and removed.

[0015] In some specific embodiments of this application, during the step of peeling off the second temporary bonding substrate, the laser response layer and the laser blocking layer are removed together; a partial thickness of the support bonding layer is removed.

[0016] In some specific embodiments of this application, the step of forming spaced p-type sub-pixel electrodes and n-type sub-pixel electrodes on the top surface of each epitaxial pixel stack includes: forming p-type sub-pixel electrode grooves on the top surface of each epitaxial pixel stack; forming n-type sub-pixel electrode grooves on the top surface of each epitaxial pixel stack; wherein the p-type sub-pixel electrode grooves of red, green, and blue sub-pixels have different corresponding positional relationships and corresponding connection relationships relative to their respective sub-pixels; the n-type sub-pixel electrode grooves of red, green, and blue sub-pixels have different corresponding positional relationships and corresponding connection relationships relative to their respective sub-pixels; the p-type sub-pixel electrode grooves and n-type sub-pixel electrode grooves in the same sub-pixel have different corresponding positional relationships and corresponding connection relationships; filling each p-type sub-pixel electrode groove with metal to form a p-type sub-pixel electrode, and the p-type sub-pixel electrode also covers the opening of each p-type sub-pixel electrode groove and the surrounding film surface; filling each n-type sub-pixel electrode groove with metal to form an n-type sub-pixel electrode, and the n-type sub-pixel electrode also covers the opening of each n-type sub-pixel electrode groove and the surrounding film surface.

[0017] In some specific embodiments of this application, the following steps are also included: after the first temporary bonding substrate is stripped and removed, a plurality of parallel spacer trenches are formed in the pixel epitaxial structure by etching. The spacer trenches extend from the transparent conductive layer to the support connection layer, so that the pixel epitaxial structure is divided into a plurality of isolated island structures, each island structure constituting an epitaxial pixel stack; each spacer trench is filled with insulating material to form an insulating spacer layer, which isolates each adjacent epitaxial pixel stack. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the specific embodiments of this application or the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0019] Figures 1a-1c This is a schematic diagram showing some states during the formation of an epitaxial stacked full-color Micro-LED chip; Figure 2 This is a schematic diagram showing the state of an epitaxial stacked full-color Micro-LED chip after it is connected to a driving circuit. Figure 3-Figure 23bThis is a schematic diagram showing the state of the chip at each step in the manufacturing process of an epitaxial stacked full-color Micro-LED chip according to an embodiment of this application.

[0020] Figure 24a and Figure 24b This is a schematic diagram showing the connection between an epitaxial stacked full-color Micro-LED chip and a driving circuit according to an embodiment of this application. Detailed Implementation

[0021] refer to Figures 1a-1c The formation process of an epitaxial stacked full-color Micro-LED chip first involves forming... Figure 1a Epitaxial pixel stacking: blue light-emitting structure 310, green light-emitting structure 320, and red light-emitting structure 330 are stacked upwards from substrate 100; then, according to the light emission requirements of different sub-pixels, light-emitting structures of the same height are etched to expose them, such as... Figure 1b As shown, etching is performed sequentially until the red light-emitting structure 330 is exposed, then until the green light-emitting structure 320 is exposed, and finally until the blue light-emitting structure 310 is exposed; then uniform packaging and electrode fabrication are performed, as follows. Figure 1c As shown, electrodes e of different heights are packaged and positioned. This results in a chip structure where the electrode heights differ for each of the different light-emitting structures. (Reference) Figure 2 When these sub-pixels are connected to the driving circuit, the structures of different colors are also different. The red light-emitting structure 330 of the red sub-pixel has the highest stacking height, therefore its electrical connection structure C-height is the lowest; the blue light-emitting structure 310 of the blue sub-pixel has the lowest stacking height, therefore its electrical connection structure C-height is the highest; and the electrical connection structure C-height of the green light-emitting structure 320 of the green sub-pixel is in between. This increases the manufacturing complexity, and because of the different bonding structures, the driving requirements and losses between different sub-pixels are different, thus posing a risk to reliability after aging, and there is also a risk of short circuits due to excessive metal in some areas. Furthermore, because the different light-emitting structures have different heights, mass transfer requires transferring the sub-pixel stack structures of different heights in three separate steps, which involves many steps and increases the risk of structural defects during the transfer process.

[0022] Therefore, this application provides an epitaxial stacked full-color Micro-LED chip and its manufacturing method to solve the problems of high process difficulty, reduced reliability risk after aging, and even short circuit risk of epitaxial stacked full-color Micro-LED chips.

[0023] This application provides an epitaxial stacked full-color Micro-LED chip, comprising: a support connection layer; a plurality of full-color Micro-LED pixels arrayed on the support connection layer; each full-color Micro-LED pixel comprising three epitaxial pixel stacks, respectively serving as a red sub-pixel, a green sub-pixel, and a blue sub-pixel; each epitaxial pixel stack having the same height, and each comprising an epitaxial buffer layer, a blue light-emitting structure, a green light-emitting structure, and a red light-emitting structure stacked from the side closest to the support connection layer to the side furthest from the support connection layer; the blue light-emitting structure, the green light-emitting structure, and the red light-emitting structure being connected sequentially through a tunnel junction; each epitaxial pixel stack having spaced p-type sub-pixel electrodes and n-type sub-pixel electrodes on its top surface; the red... The p-type sub-pixel electrodes of the photon pixel, green photon pixel, and blue photon pixel have different corresponding positional relationships and corresponding connection relationships relative to their respective sub-pixels; the n-type sub-pixel electrodes of the red photon pixel, green photon pixel, and blue photon pixel have different corresponding positional relationships and corresponding connection relationships relative to their respective sub-pixels; the p-type sub-pixel electrodes and n-type sub-pixel electrodes in the same sub-pixel have different corresponding positional relationships and corresponding connection relationships; the p-type sub-pixel electrodes in the same full-color Micro-LED pixel are spaced apart from each other, and the n-type sub-pixel electrodes in the same full-color Micro-LED pixel are spaced apart from each other.

[0024] This application also provides a method for manufacturing an epitaxial stacked full-color Micro-LED chip, comprising the following steps: providing a support connection layer; forming a plurality of full-color Micro-LED pixels arranged in an array on the support connection layer; each full-color Micro-LED pixel includes three epitaxial pixel stacks, which serve as red, green, and blue photonic sub-pixels, respectively; wherein each epitaxial pixel stack has the same height and includes an epitaxial buffer layer, a blue light-emitting structure, a green light-emitting structure, and a red light-emitting structure stacked from the side closest to the support connection layer to the side furthest from the support connection layer; the blue, green, and red light-emitting structures are connected sequentially through a tunnel junction; and on the top surface of each epitaxial pixel stack... The system comprises p-type and n-type sub-pixel electrodes spaced apart. The p-type sub-pixel electrodes of the red, green, and blue sub-pixels have different corresponding positional and connection relationships relative to their respective sub-pixels. Similarly, the n-type sub-pixel electrodes of the red, green, and blue sub-pixels have different corresponding positional and connection relationships relative to their respective sub-pixels. Within the same sub-pixel, the p-type and n-type sub-pixel electrodes have different corresponding positional and connection relationships. All p-type sub-pixel electrodes in the same full-color Micro-LED pixel are spaced apart from each other, and all n-type sub-pixel electrodes in the same full-color Micro-LED pixel are spaced apart from each other.

[0025] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0026] refer to Figure 3-Figure 23b In one aspect of this application, an epitaxial stacked full-color Micro-LED chip is provided, comprising: a support connection layer 500; a plurality of full-color Micro-LED pixels arrayed on the support connection layer 500; each full-color Micro-LED pixel comprising three epitaxial pixel stacks, respectively serving as a red photonic pixel R, a green photonic pixel G, and a blue photonic pixel B; each epitaxial pixel stack having the same height, and each comprising an epitaxial buffer layer 200, a blue light-emitting structure 310, a green light-emitting structure 320, and a red light-emitting structure 330 stacked from the side closer to the support connection layer 500 to the side farther from the support connection layer 500; the blue light-emitting structure 310, the green light-emitting structure 320, and the red light-emitting structure 330 are sequentially connected by tunnel junctions (including a first tunnel junction 410 and a second tunnel junction). 420); Each epitaxial pixel stack has p-type sub-pixel electrodes 920 and n-type sub-pixel electrodes 910 spaced apart on its top surface; the p-type sub-pixel electrodes 920 of red sub-pixel R, green sub-pixel G, and blue sub-pixel B have different corresponding positional relationships and corresponding connection relationships relative to their respective sub-pixels; the n-type sub-pixel electrodes 910 of red sub-pixel R, green sub-pixel G, and blue sub-pixel B have different corresponding positional relationships and corresponding connection relationships relative to their respective sub-pixels; the p-type sub-pixel electrodes 920 and n-type sub-pixel electrodes 910 in the same sub-pixel have different corresponding positional relationships and corresponding connection relationships; the p-type sub-pixel electrodes in the same full-color Micro-LED pixel are spaced apart from each other, and the n-type sub-pixel electrodes in the same full-color Micro-LED pixel are spaced apart from each other.

[0027] The epitaxial stacked full-color Micro-LED chip provided in this application stacks different color sub-pixels within the same pixel at the same height. Different sub-pixels are controlled separately by driving electrodes at different positions and with different connection relationships. This allows different color sub-pixels to emit different colors of light, even though their basic light-emitting structures are the same (all containing stacked blue, green, and red light-emitting structures). For example, although the red sub-pixel has the same light-emitting structure as the other two sub-pixels, its driving electrode only drives the red light-emitting structure, thus emitting only red light. The blue and green sub-pixels follow the same principle. Since the epitaxial pixel stacking structure of the three sub-pixels is the same, their heights are also the same. The electrode structures on their top surfaces also have the same height, differing only in their depth and the connection layers. Therefore, when connecting the driving circuit, the electrical connection structures of each sub-pixel can also be of the same height and use the same connection structure. This avoids the reliability reduction and short-circuit risk after aging caused by differences in the electrical connection structures of different sub-pixels. Meanwhile, since the three color sub-pixels use the same light-emitting structure, there is no need to perform different structural etching. Although the etching depth of the electrodes is different, it can be completed in one step, thus simplifying the process steps and reducing the complexity of the process. Furthermore, since the light-emitting structure has the same height, mass transfer can be completed in just one step, allowing all three color sub-pixels to be transferred in one step, reducing the risk of structural defects caused by the transfer process.

[0028] In some specific embodiments of this application, the epitaxial pixel stack includes a transparent conductive layer 700 located on the side of the red light-emitting structure 330 away from the support connection layer 500; the p-type sub-pixel electrode 920 of the red sub-pixel R is located on the surface of the transparent conductive layer 700; the n-type sub-pixel electrode 910 of the red sub-pixel R extends from the surface of the transparent conductive layer 700 into the red light-emitting structure 330; the p-type sub-pixel electrode 920 of the green sub-pixel G extends from the surface of the transparent conductive layer 700 into the red light-emitting structure 330; the n-type sub-pixel electrode 91 of the green sub-pixel G extends from the surface of the transparent conductive layer 700 into the green light-emitting structure 320; the p-type sub-pixel electrode 920 of the blue sub-pixel B extends from the surface of the transparent conductive layer 700 into the green light-emitting structure 320; and the n-type sub-pixel electrode 910 of the blue sub-pixel B extends from the surface of the transparent conductive layer 700 into the blue light-emitting structure 310.

[0029] In some specific embodiments of this application, the red light-emitting structure 330 includes a stacked red n-type contact layer 331, a red light-emitting layer 332, and a red electron blocking layer 333; the n-type sub-pixel electrode 910 of the red photonic pixel R extends into the red n-type contact layer 331 and is electrically connected to the red n-type contact layer 331; the green light-emitting structure 320 includes a stacked green n-type contact layer 321, a green light-emitting layer 322, and a green electron blocking layer 323; a second tunnel junction 420 is disposed between the green electron blocking layer 323 and the red n-type contact layer 331; the p-type sub-pixel electrode 920 of the green photonic pixel G extends into the red n-type contact layer 331 and is electrically connected to the red n-type contact layer 331. 331 Electrical connection; the n-type sub-pixel electrode 910 of the green photonic sub-pixel G extends into the green n-type contact layer 321 and is electrically connected to the green n-type contact layer 321; the blue light-emitting structure 310 includes a stacked blue n-type contact layer 311, a blue light-emitting layer 312 and a blue electron blocking layer 313; a first tunnel junction 410 is provided between the blue electron blocking layer 313 and the green n-type contact layer 321; the p-type sub-pixel electrode 910 of the blue photonic sub-pixel B extends into the green n-type contact layer 321 and is electrically connected to the green n-type contact layer 321; the n-type sub-pixel electrode 910 of the blue photonic sub-pixel B extends into the blue n-type contact layer 311 and is electrically connected to the blue n-type contact layer 311.

[0030] In some specific embodiments of this application, the blue emitting layer 312 includes a blue InGaN-based multiple quantum well active layer; the green emitting layer 322 includes a green InGaN-based multiple quantum well active layer and an AlN layer (not shown in detail in the figure) on the surface of the green InGaN-based multiple quantum well active layer away from the blue emitting layer; the red emitting layer 332 includes a GaN / InGaN superlattice layer, a blue InGaN-based single quantum well active layer, and a red InGaN-based multiple quantum well active layer stacked together; the red emitting structure also includes a p-type GaN layer and a p-type GaN layer stacked together on the side of the red electron blocking layer away from the red emitting layer. + A GaN contact layer (not shown in detail in the figure) is formed, and a transparent conductive layer is disposed on the p-type GaN contact layer. + The GaN contact layer faces away from the red emitting layer. Furthermore, the aforementioned red emitting layer is only one embodiment; in other embodiments, it can be in other forms, such as a superlattice layer, a blue InGaN-based single quantum well, or a p-type GaN contact layer. + Stacked GaN layers. The stacking configuration of the red emitting layer 332 is not limited to the configuration disclosed above.

[0031] In some specific embodiments of this application, the red n-type contact layer 331 is an n-type Si-doped GaN or n-type Si-doped AlGaN layer; the green n-type contact layer 321 is an n-type Si-doped GaN or n-type Si-doped AlGaN layer; the blue n-type contact layer 311 is an n-type Si-doped GaN or n-type Si-doped AlGaN layer; the red electron blocking layer 333 is a p-type AlGaN layer; the green electron blocking layer 323 is a p-type AlGaN layer; the blue electron blocking layer 313 is a p-type AlGaN layer; the support connection layer 500 is a single layer or multiple layers of SiO2 and / or HfO2; an insulating spacer layer is provided between each epitaxial pixel stack to separate adjacent epitaxial pixel stacks; the materials of each p-type sub-pixel electrode 920 and each n-type sub-pixel electrode 910 include one or more combinations of aluminum, silver, rhodium, zinc, gold, germanium, nickel, chromium, platinum, tin, copper, tungsten, palladium, indium, and titanium.

[0032] In addition, refer to Figure 3-Figure 23b This application also provides a method for manufacturing an epitaxial stacked full-color Micro-LED chip, comprising the following steps: providing a support connection layer 500; forming an array of several full-color Micro-LED pixels on the support connection layer 500; each full-color Micro-LED pixel includes three epitaxial pixel stacks, respectively serving as a red photonic pixel R, a green photonic pixel G, and a blue photonic pixel B; wherein each epitaxial pixel stack has the same height and includes a blue light-emitting structure 310, a green light-emitting structure 320, and a red light-emitting structure 330 stacked from the side closer to the support connection layer 500 to the side farther from the support connection layer 500; the blue light-emitting structure 310, the green light-emitting structure 320, and the red light-emitting structure 330 are sequentially connected by tunnel junctions (including a first tunnel junction 410 and a second tunnel junction 420); Each epitaxial pixel stack has p-type sub-pixel electrodes 920 and n-type sub-pixel electrodes 910 spaced apart on its top surface. The p-type sub-pixel electrodes 920 of the red sub-pixel R, green sub-pixel G, and blue sub-pixel B have different corresponding positional and connection relationships relative to their respective sub-pixels. The n-type sub-pixel electrodes 910 of the same sub-pixel have different corresponding positional and connection relationships relative to their respective sub-pixels. The p-type and n-type sub-pixel electrodes 920 within the same full-color Micro-LED pixel are spaced apart from each other, and the n-type sub-pixel electrodes 910 within the same full-color Micro-LED pixel are also spaced apart from each other.

[0033] The method for manufacturing an epitaxial stacked full-color Micro-LED chip provided in this application can be used to manufacture the epitaxial stacked full-color Micro-LED chip provided in this application. Different color sub-pixels within the same pixel are stacked at the same height, and controlled separately through different driving electrodes corresponding to different positions and using different connection relationships. This allows different color sub-pixels to emit different colors of light, even though their basic light-emitting structures are the same (all containing stacks of blue, green, and red light-emitting structures). For example, although the red sub-pixel has the same light-emitting structure as the other two sub-pixels, its driving electrode only drives and controls the red light-emitting structure, thus emitting only red light. The blue and green sub-pixels are similarly handled. Since the epitaxial pixel stacking structure of the three sub-pixels is the same, their height is also the same. The electrode structures on their top surfaces also have the same height, differing only in their depth and the connection layers. Therefore, when connecting the driving circuit, the electrical connection structures of each sub-pixel can also have the same height and use the same connection structure. This avoids the reduced reliability and short-circuit risk after aging caused by differences in the electrical connection structures of different sub-pixels. Meanwhile, since the three color sub-pixels use the same light-emitting structure, there is no need to perform different structural etching. Although the etching depth of the electrodes is different, it can be completed in one step, thus simplifying the process steps and reducing the complexity of the process. Furthermore, since the light-emitting structure has the same height, mass transfer can be completed in just one step, allowing all three color sub-pixels to be transferred in one step, reducing the risk of structural defects caused by the transfer process.

[0034] In some specific embodiments of this application, reference is made to Figures 3-8The steps of providing a support connection layer 500 and forming an array of full-color Micro-LED pixels on the support connection layer 500 include: providing a growth substrate 101; forming an epitaxial buffer layer 200 on the growth substrate 101; forming a blue light-emitting structure 310 on the epitaxial buffer layer 200; forming a first tunnel junction 410 on the side of the blue light-emitting structure 310 facing away from the growth substrate 101; forming a green light-emitting structure 320 on the side of the first tunnel junction 410 facing away from the blue light-emitting structure 310; forming a second tunnel junction 420 on the side of the green light-emitting structure 320 facing away from the first tunnel junction 410; forming a red light-emitting structure 330 on the side of the second tunnel junction 420 facing away from the green light-emitting structure 320; and forming a transparent conductive layer 700 on the side of the red light-emitting structure 330 facing away from the second tunnel junction 420. The pixel epitaxial structure is thus formed. A first temporary bonding carrier 102 is provided, and the red light-emitting structure 330 side of the pixel epitaxial structure is oriented towards the first temporary bonding carrier 102 and bonded to the first temporary bonding carrier 102. The growth substrate 101 is peeled off from the surface of the epitaxial buffer layer 200. A first connecting layer 510 is formed on the surface of the epitaxial buffer layer 200. A second temporary bonding carrier 103 is provided. A laser response layer 610 and a laser blocking layer 620 are sequentially formed on one side of the second temporary bonding carrier 103. A second connecting layer 520 is formed on one side of the laser blocking layer 620. The first connecting layer 510 and the second connecting layer 520 are butted and bonded together to form a supporting connecting layer 500. The first temporary bonding carrier 102 is peeled off and removed. In a subsequent process, the second temporary bonding carrier 103 is peeled off and removed.

[0035] In some specific embodiments of this application, after peeling off the growth substrate 101 and before forming the first bonding layer 510, the surface of the epitaxial buffer layer 200 is roughened by etching with an alkaline solution; the alkaline solution can be, for example, KOH. Etching and roughening the surface of the epitaxial buffer layer 200 with an alkaline solution can improve the light extraction efficiency of the LED device. In the step of peeling off and removing the second temporary bonding carrier 103, the laser response layer 610 and the laser blocking layer 620 are removed together; a portion of the thickness of the support bonding layer 500 is also removed.

[0036] In some specific embodiments of this application, reference is made to Figures 12a-17bThe step of forming spaced p-type sub-pixel electrodes 920 and n-type sub-pixel electrodes 910 on the top surface of each epitaxial pixel stack includes: forming p-type sub-pixel electrode grooves on the top surface of each epitaxial pixel stack; forming n-type sub-pixel electrode grooves on the top surface of each epitaxial pixel stack; wherein the p-type sub-pixel electrode grooves of red sub-pixel R, green sub-pixel G, and blue sub-pixel B have different corresponding positional relationships and corresponding connection relationships relative to their respective sub-pixels; the n-type sub-pixel electrode grooves of red sub-pixel R, green sub-pixel G, and blue sub-pixel B have different corresponding positional relationships and corresponding connection relationships relative to their respective sub-pixels. Different corresponding positional relationships and corresponding connection relationships; p-type sub-pixel electrode slots and n-type sub-pixel electrode slots in the same sub-pixel have different corresponding positional relationships and corresponding connection relationships; metal is filled in each p-type sub-pixel electrode slot to form a p-type sub-pixel electrode 920, and the p-type sub-pixel electrode 920 also covers the opening of each p-type sub-pixel electrode slot and the surrounding film surface; metal is filled in each n-type sub-pixel electrode slot to form an n-type sub-pixel electrode 910, and the n-type sub-pixel electrode 910 also covers the opening of each n-type sub-pixel electrode slot and the surrounding film surface.

[0037] In some specific embodiments of this application, the following steps are also included: after the first temporary bonding carrier 102 is stripped and removed, a plurality of parallel spacer trenches are formed in the pixel epitaxial structure by etching. The spacer trenches extend from the transparent conductive layer to the support connection layer 500, so that the pixel epitaxial structure is divided into a plurality of isolated island structures, each island structure constituting an epitaxial pixel stack; each spacer trench is filled with insulating material to form an insulating spacer layer, which isolates each adjacent epitaxial pixel stack.

[0038] A specific manufacturing process is as follows: Stacked full-color epitaxial growth was completed on growth substrate 101. For example... Figure 3 As shown, it includes an epitaxial buffer layer 200, a blue light-emitting structure 310, a first tunnel junction 410, a green light-emitting structure 320, a second tunnel junction 420, and a red light-emitting structure 330. Optionally, the growth substrate 101 is a sapphire substrate, and the back side of the sapphire substrate is polished.

[0039] Temporary bonding is performed between the epitaxial wafer and the first temporary bonding carrier 102 via temporary bonding adhesive or film layer P1 (e.g., ...). Figure 4 (As shown). Optionally, the first temporary bonding carrier 102 is a double-polished sapphire substrate of the same size as the epitaxial wafer. Optionally, the material of the temporary bonding adhesive or film P1 can be polyimide, polycarbonate, polyacrylate, or silicone. The above-mentioned temporary bonding materials have debonding properties and can be debonded by light irradiation or mechanical peeling. After debonding, the temporary bonding material is not easy to leave residues on the epitaxial film or the residues are easy to remove cleanly with cleaning solvents or dry adhesive removal methods.

[0040] After temporary bonding is completed, the growth substrate 101 is removed. Optionally, for epitaxial structures grown on a sapphire substrate, ultraviolet laser can be used for substrate lift-off (e.g., ...). Figure 5 For epitaxial structures grown on silicon substrates, a combination of chemical etching and dry etching can be used to remove the substrate. Optionally, the wavelength of the ultraviolet laser is ≤360nm.

[0041] A first interconnect layer 510 is deposited on the surface of the epitaxial buffer layer (u-GaN) after the substrate is removed. Figure 6 (As shown). Optionally, the first interconnect layer 510 is a stacked structure of SiO2, HfO2, or other materials. Optionally, to improve the light extraction efficiency of the chip, after peeling off the first temporary bonding carrier and before forming the first interconnect layer, the surface of the u-GaN can be roughened using a wet chemical method or a dry etching method, and the surface of the epitaxial buffer layer can be roughened using an alkaline solution; the alkaline solution can be, for example, KOH.

[0042] A laser-responsive layer 610 is first grown on the second temporary bonding carrier 103, followed by the sequential deposition of a laser-blocking layer 620 and a second connecting layer 520 on its surface. The material of the second connecting layer is a stacked structure of SiO2, HfO2, or similar materials. Then, the second temporary bonding carrier 103 with the aforementioned film layers is bonded to the stacked full-color epitaxial wafer with the aforementioned light-emitting structure stacked by fusion bonding, with the bonding interface located between the connecting layers of the two wafers (e.g., ...). Figure 7 (As shown). The first bonding layer 510 and the second bonding layer 520 form the supporting bonding layer 500. Optionally, the second temporary bonding carrier 103 is a sapphire substrate of the same size as the epitaxial wafer. Optionally, the laser response layer 610 may be made of undoped GaN (u-GaN) material and prepared by metal-organic chemical vapor deposition (MOCVD). The laser blocking layer 620 may be made of AlN or AlGaN and their stacked structures; this layer must have no absorption of visible light with wavelengths greater than 360 nm, while having strong absorption characteristics for ultraviolet light with wavelengths less than 360 nm. In addition, the laser blocking layer 620 should have sufficient thickness to ensure that in the subsequent laser lift-off process, after the ultraviolet laser passes through the epitaxial buffer layer, it only causes the u-GaN in the stacked full-color epitaxial structure to decompose, without damaging other epitaxial functional layers.

[0043] The first temporary bonding carrier 102 (e.g.,) is removed by laser ablation or mechanical ablation. Figure 8 (As shown). At the same time, the temporary bonding adhesive or film layer P1 is also removed.

[0044] Electrical isolation between red, green, and blue light sub-pixels is achieved through photolithography and dry etching processes, with the etching depth capped at the top surface of the epitaxial buffer layer (e.g., ...). Figure 9a , Figure 9b As shown, where Figure 9b for Figure 9a (Cross-section diagram of section line aa).

[0045] A transparent conductive layer (e.g., ...) is deposited on the top surface of each sub-pixel stack. Figure 11 As shown, Figure 11 for Figure 10a (Cross-sectional view of section aa). Optionally, thermal annealing can be performed before deposition to remove H from the etched epitaxial structure, allowing the transparent conductive layer to form an ohmic contact with the p-GaN layer (e.g., Figure 10a , Figure 10b As shown, where Figure 10b for Figure 10a (Cross-sectional view of section aa). Optionally, the transparent conductive layer 700 can be any one or more composite structural materials selected from indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), indium-doped zinc oxide (GZO), aluminum nanowires, silver nanowires, copper nanowires, graphene, multi-walled carbon nanotubes, etc.

[0046] Using photolithography and dry etching processes, n-shaped grooves for red, green, and blue sub-pixels are fabricated in each sub-pixel stack (e.g., ...). Figure 12a , Figure 12b As shown, where Figure 12b for Figure 12a (Cross-sectional view of the n-type cross-section line). The etching depth of the n-type trench needs to be precisely controlled to expose the n-type contact layers 311, 321, and 331 of each sub-pixel, such as n-GaN or n-AlGaN layers. The exposed n-type contact layers need to have sufficient thickness to enhance current spread.

[0047] Using photolithography and dry etching processes, p-shaped grooves for green and blue sub-pixels are fabricated in each sub-pixel stack (e.g., ...). Figure 13a , Figure 13b As shown, where Figure 13b for Figure 13a (Cross-sectional view of the PP section line). The etching depth of the p-type groove needs to be precisely controlled. The surface of the green p-type groove corresponds to the red n-type contact layer 331, while the surface of the blue p-type groove corresponds to the green n-type contact layer 321. Each exposed n-type contact layer needs to have sufficient thickness to enhance current spread.

[0048] A passivation layer 800 is deposited on the surface of the epitaxial structure, covering the sidewalls of the p-type and n-type grooves with the passivation layer 800. Then, the passivation layer 800 at the bottom of the p-type and n-type grooves is etched away by photolithography and dry etching processes to expose the p-type grooves. + Type-1 and type-n contact layers (such as...) Figure 14a , Figure 14b and Figure 15a , Figure 15b As shown, where Figure 14b for Figure 14a Cross-sectional view of the nn section line. Figure 15b for Figure 15a (Cross-sectional view of the pp section line). Additionally, the passivation layer 800 at the location of the p-type groove corresponding to the red photon pixel that has not formed a groove also needs to be etched away according to the location and size of other p-type grooves to expose the red n-type contact layer 331. Optionally, the passivation layer 800 material can be Al2O3, SiO2, Si3N4, or their stacked structures, and the deposition method can be ALD or PECVD.

[0049] Anti-crosstalk structures are fabricated using photolithography and filled in the electrically isolated regions between sub-pixels (e.g., ...). Figure 18a , Figure 18b and Figure 19a , Figure 19b As shown, where Figure 18b for Figure 18a Cross-sectional view of the nn section line. Figure 19b for Figure 19a (Cross-sectional view of the PP section line).

[0050] Using photolithography, metal deposition, and lift-off processes, n-type sub-pixel electrodes 910 for red sub-pixel R, green sub-pixel G, and blue sub-pixel B are fabricated. The n-type sub-pixel electrodes 910 completely fill the n-type grooves and partially extend out of the groove openings, covering the passivation layer 800 around the groove openings (e.g., ...). Figure 16a , Figure 16b As shown, where Figure 16b for Figure 16a (Cross-section diagram of the nn section line).

[0051] The p-type sub-pixel electrodes 920 for red, green, and blue sub-pixels are fabricated using photolithography, metal deposition, and lift-off processes. The p-type sub-pixel electrode 920 for the red sub-pixel R is fabricated on the upper surface of the transparent conductive layer 700. The p-type sub-pixel electrodes 920 for the green sub-pixel G and the blue sub-pixel B are fabricated on the surface of their respective p-type grooves, completely filling the grooves and partially extending beyond the groove openings, covering the passivation layer 800 around the groove openings (e.g., ...). Figure 17a , Figure 17b As shown, where Figure 17b for Figure 17a (Cross-sectional view of the PP section line).

[0052] Optionally, the p-type and n-type metal electrode materials can be any one or more composite materials selected from aluminum, silver, rhodium, zinc, gold, germanium, nickel, chromium, platinum, tin, copper, tungsten, palladium, indium, titanium, etc.

[0053] Figure 20a , Figure 20b , Figure 21a , Figure 21b , Figure 22a , Figure 22b These are schematic diagrams of cross-sections along one side of the longitudinal direction of the red, green, and blue sub-pixels, respectively. Figure 20b for Figure 20a A cross-sectional view of the rr section line, that is, a schematic diagram of the cross-section on the longitudinal side of the red photon pixel; Figure 21b for Figure 21a A cross-sectional view of the GG section line, that is, a schematic diagram of the cross-section on the longitudinal side of the green photon pixel; Figure 22b for Figure 22a The cross-sectional view of the bb section line, that is, a schematic diagram of the cross-section on the longitudinal side of the blue sub-pixel.

[0054] Figure 23a and Figure 23b This is a schematic diagram illustrating the removal of the second temporary bonding carrier 103 using laser ablation. Figure 23a for Figure 23b A cross-sectional view of the PP section line. Optionally, after removing the substrate, the Ga residue and laser blocking layer after laser lift-off can be removed by a dry etching process. As can be seen from the figure, the laser temporary substrate 104 is connected to the top of the epitaxial structure through bonding adhesive P2, and the second temporary bonding carrier 103 is irradiated with laser L. In the step of lifting off the second temporary bonding carrier 103, the laser response layer 610 and the laser blocking layer 620 are removed together; a portion of the thickness of the support connection layer 500 is removed.

[0055] Optionally, the first temporary bonding carrier 102 is a double-polished sapphire substrate, and the second temporary bonding carrier 103 is a glass substrate or a double-polished sapphire substrate.

[0056] In summary, the fabrication of an epitaxial stacked full-color Micro-LED device has been completed.

[0057] Figure 24a and Figure 24b This diagram illustrates the bonding contact points between the metal electrodes of an epitaxially stacked full-color Micro-LED chip and the single-pixel (subpixel) bonding points of the full-color driving substrate. The chip and the driving substrate have the same subpixel pitch. Figure 24a The n-type sub-pixel electrodes 910 of different color sub-pixels in the epitaxial stacked full-color Micro-LED chip and Figure 24b The n-type contact point 1010 on the full-color driving substrate corresponds to... Figure 24a The p-type sub-pixel electrode 920 of different color sub-pixels in the epitaxial stacked full-color Micro-LED chip and Figure 24bThe p-type contact point 1020 of the corresponding color for each pixel of the full-color driving substrate corresponds to a specific color. Alternatively, the metal electrode size of the driving substrate sub-pixel can be slightly larger than the metal electrode size of the chip sub-pixel, thereby improving the tolerance for alignment errors during flip bonding.

[0058] Although embodiments of this application have been described in conjunction with the accompanying drawings, those skilled in the art can make various modifications and variations without departing from the spirit and scope of this application, and such modifications and variations all fall within the scope defined by the appended claims.

Claims

1. An epitaxial stacked full-color Micro-LED chip, characterized in that, include: Support connection layer; The supporting connection layer has several full-color Micro-LED pixels arranged in an array; Each of the full-color Micro-LED pixels comprises three epitaxial pixel stacks, which serve as red, green and blue sub-pixels respectively; Each of the aforementioned epitaxial pixels has the same stacking height and includes an epitaxial buffer layer, a blue light-emitting structure, a green light-emitting structure, and a red light-emitting structure stacked from the side closest to the support connection layer to the side furthest from the support connection layer; the blue light-emitting structure, the green light-emitting structure, and the red light-emitting structure are connected sequentially through a tunnel junction; Each of the epitaxial pixel stacks has spaced p-type sub-pixel electrodes and n-type sub-pixel electrodes on its top surface; The p-type sub-pixel electrodes of the red, green, and blue sub-pixels have different corresponding positional relationships and corresponding connection relationships relative to their respective sub-pixels; The n-type sub-pixel electrodes of the red, green, and blue sub-pixels have different corresponding positional relationships and corresponding connection relationships relative to their respective sub-pixels; The p-type sub-pixel electrode and the n-type sub-pixel electrode in the same sub-pixel have different corresponding positional relationships and corresponding connection relationships; Each p-type sub-pixel electrode in the same full-color Micro-LED pixel is spaced apart from each other, and each n-type sub-pixel electrode in the same full-color Micro-LED pixel is spaced apart from each other.

2. The epitaxial stacked full-color Micro-LED chip according to claim 1, characterized in that, The epitaxial pixel stack includes a transparent conductive layer located on the side of the red light-emitting structure away from the supporting connection layer; The p-type sub-pixel electrode of the red photon is located on the surface of the transparent conductive layer; The n-type sub-pixel electrode of the red photon extends from the surface of the transparent conductive layer into the red light-emitting structure; The p-type sub-pixel electrode of the green photon extends from the surface of the transparent conductive layer into the red light-emitting structure; The n-type sub-pixel electrode of the green photon extends from the surface of the transparent conductive layer into the green light-emitting structure; The p-type sub-pixel electrode of the blue sub-pixel extends from the surface of the transparent conductive layer into the green light-emitting structure; The n-type sub-pixel electrode of the blue sub-pixel extends from the surface of the transparent conductive layer into the blue light-emitting structure.

3. The epitaxial stacked full-color Micro-LED chip according to claim 2, characterized in that, The red luminescent structure comprises a stacked red n-type contact layer, a red luminescent layer, and a red electron blocking layer; The n-type sub-pixel electrode of the red photon sub-pixel extends into the red n-type contact layer and is electrically connected to the red n-type contact layer; The green light-emitting structure includes a stacked green n-type contact layer, a green light-emitting layer, and a green electron blocking layer; a second tunnel junction is provided between the green electron blocking layer and the red n-type contact layer; The p-type sub-pixel electrode of the green photon extends into the red n-type contact layer and is electrically connected to the red n-type contact layer; The n-type sub-pixel electrode of the green photon sub-pixel extends into the green n-type contact layer and is electrically connected to the green n-type contact layer; The blue luminescent structure includes a stacked blue n-type contact layer, a blue luminescent layer, and a blue electron blocking layer; a first tunnel junction is disposed between the blue electron blocking layer and the green n-type contact layer; The p-type sub-pixel electrode of the blue sub-pixel extends into the green n-type contact layer and is electrically connected to the green n-type contact layer; The n-type sub-pixel electrode of the blue sub-pixel extends into the blue n-type contact layer and is electrically connected to the blue n-type contact layer.

4. The epitaxial stacked full-color Micro-LED chip according to claim 3, characterized in that, The blue emitting layer includes a blue InGaN-based multi-quantum-well active layer; The green emitting layer includes a green InGaN-based multi-quantum-well active layer and an AlN layer on the surface of the green InGaN-based multi-quantum-well active layer away from the blue emitting layer. The red emitting layer comprises a stacked GaN / InGaN superlattice layer, a blue InGaN-based single quantum well active layer, and a red InGaN-based multi-quantum well active layer; the red emitting structure further comprises a p-type GaN layer and a p-type GaN layer stacked on the side of the red electron blocking layer away from the red emitting layer. + Type GaN contact layer, wherein the transparent conductive layer is disposed on p + The GaN contact layer faces away from the red emitting layer.

5. The epitaxial stacked full-color Micro-LED chip according to claim 4, characterized in that, The red n-type contact layer is an n-type Si-doped GaN or an n-type Si-doped AlGaN layer; The green n-type contact layer is an n-type Si-doped GaN or an n-type Si-doped AlGaN layer; The blue n-type contact layer is an n-type Si-doped GaN or an n-type Si-doped AlGaN layer; The red electron blocking layer is a p-type AlGaN layer; The green electron blocking layer is a p-type AlGaN layer; The blue electron blocking layer is a p-type AlGaN layer; The supporting connection layer is a single layer or multiple layers of SiO2 and / or HfO2; An insulating spacer layer is provided between each of the epitaxial pixel stacks to separate adjacent epitaxial pixel stacks; The materials of each of the p-type sub-pixel electrodes and each of the n-type sub-pixel electrodes include one or more combinations of aluminum, silver, rhodium, zinc, gold, germanium, nickel, chromium, platinum, tin, copper, tungsten, palladium, indium, and titanium.

6. A method for manufacturing an epitaxial stacked full-color Micro-LED chip, characterized in that, Includes the following steps: Provides a support connection layer; A plurality of full-color Micro-LED pixels are formed in an array on the supporting connection layer; each full-color Micro-LED pixel includes three epitaxial pixel stacks, which serve as red photonics, green photonics and blue photonics respectively; Each of the aforementioned epitaxial pixels has the same stacking height and includes an epitaxial buffer layer, a blue light-emitting structure, a green light-emitting structure, and a red light-emitting structure stacked from the side closest to the support connection layer to the side furthest from the support connection layer; the blue light-emitting structure, the green light-emitting structure, and the red light-emitting structure are connected sequentially through a tunnel junction; A spaced p-type sub-pixel electrode and an n-type sub-pixel electrode are formed on the top surface of each of the epitaxial pixel stacks; in, The p-type sub-pixel electrodes of the red, green, and blue sub-pixels have different corresponding positional relationships and corresponding connection relationships relative to their respective sub-pixels; The n-type sub-pixel electrodes of the red, green, and blue sub-pixels have different corresponding positional relationships and corresponding connection relationships relative to their respective sub-pixels; The p-type sub-pixel electrode and the n-type sub-pixel electrode in the same sub-pixel have different corresponding positional relationships and corresponding connection relationships; Each p-type sub-pixel electrode in the same full-color Micro-LED pixel is spaced apart from each other, and each n-type sub-pixel electrode in the same full-color Micro-LED pixel is spaced apart from each other.

7. The method for manufacturing an epitaxial stacked full-color Micro-LED chip according to claim 6, characterized in that, The aforementioned provides a support connection layer; The step of forming an array of full-color Micro-LED pixels on the supporting connection layer includes: Provide a growth substrate; An epitaxial buffer layer is formed on the growth substrate; A blue luminescent structure is formed on the epitaxial buffer layer; A first tunnel junction is formed on the side of the blue luminescent structure opposite to the growth substrate; A green luminescent structure is formed on the side of the first tunnel junction opposite to the blue luminescent structure; A second tunnel junction is formed on the side of the green luminescent structure opposite to the first tunnel junction. A red luminescent structure is formed on the side of the second tunnel junction opposite to the green luminescent structure; A transparent conductive layer is formed on the side of the red light-emitting structure opposite to the second tunnel junction. This completes the pixel epitaxial structure; A first temporary bonding carrier is provided, and the red light-emitting structure side of the pixel epitaxial structure is oriented toward the first temporary bonding carrier and bonded to the first temporary bonding carrier; The growth substrate is peeled off from the surface of the epitaxial buffer layer; A first connecting layer is formed on the surface of the epitaxial buffer layer; A second temporary bonding substrate is provided; a laser response layer and a laser blocking layer are sequentially formed on one side of the second temporary bonding substrate; a second connecting layer is formed on the surface of one side of the laser blocking layer; The first connecting layer and the second connecting layer are docked and bonded together to form a support connecting layer; The first temporary bonded substrate is peeled off and removed; In subsequent processes, the second temporary bonding carrier is peeled off and removed; It also includes: after stripping the first temporary bonding substrate and before forming the first interconnect layer, using a wet chemical method or a dry etching method to roughen the surface of the epitaxial buffer layer, and using an alkaline solution to etch and roughen the surface of the epitaxial buffer layer; the alkaline solution includes KOH.

8. The method for manufacturing an epitaxial stacked full-color Micro-LED chip according to claim 7, characterized in that, In the step of peeling off the second temporary bonded substrate, the laser response layer and the laser blocking layer are removed together; A portion of the support connection layer was removed.

9. The method for manufacturing an epitaxial stacked full-color Micro-LED chip according to claim 7, characterized in that, The step of forming spaced p-type sub-pixel electrodes and n-type sub-pixel electrodes on the top surface of each of the epitaxial pixel stacks includes: A p-type sub-pixel electrode groove is formed on the top surface of each of the epitaxial pixel stacks; An n-type sub-pixel electrode groove is formed on the top surface of each of the epitaxial pixel stacks; in, The p-type sub-pixel electrode slots of the red, green, and blue sub-pixels have different corresponding positional relationships and corresponding connection relationships relative to their respective sub-pixels; The n-type sub-pixel electrode slots of the red, green, and blue sub-pixels have different corresponding positional relationships and corresponding connection relationships relative to their respective sub-pixels; The p-type sub-pixel electrode slots and the n-type sub-pixel electrode slots in the same sub-pixel have different corresponding positional relationships and corresponding connection relationships; Metal is filled into each of the p-type sub-pixel electrode slots to form p-type sub-pixel electrodes, and the p-type sub-pixel electrodes also cover the opening of each p-type sub-pixel electrode slot and the surrounding film surface; Metal is filled into each of the n-type sub-pixel electrode slots to form an n-type sub-pixel electrode, and the n-type sub-pixel electrode also covers the opening of each of the n-type sub-pixel electrode slots and the surrounding film surface.

10. The method for manufacturing an epitaxial stacked full-color Micro-LED chip according to claim 7, characterized in that, It also includes the following steps: After the first temporary bonding substrate is stripped away, several parallel spacer grooves are formed on the pixel epitaxial structure by etching. The spacer grooves extend from the transparent conductive layer to the support connection layer, so that the pixel epitaxial structure is divided into several isolated island structures, and each island structure constitutes an epitaxial pixel stack. Each of the spacer slots is filled with insulating material to form an insulating spacer layer, thereby insulating and isolating each of the adjacent epitaxial pixels.

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