A spray booth and method of spraying for purifying a two-fluid process environment
By designing a conical guide hood and a truncated cylindrical confluence section for the spray developer in semiconductor manufacturing, combined with negative pressure suction, the problems of mist fluid diffusion and cavity contamination in two-fluid spraying technology are solved, achieving efficient fluid control and a clean environment, and improving production yield and equipment efficiency.
Patent Information
- Application Number
- CN202610075883.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-01-20
- Publication Date
- 2026-06-09
AI Technical Summary
Existing two-fluid misting technology in semiconductor wafer manufacturing leads to disordered diffusion of mist fluid, cross-contamination of cavities, and the risk of liquid dripping. It is difficult to effectively prevent the escape of mist from multiple nozzles, increasing equipment costs and reducing production yield.
Design a spray developing hood, including a conical guide hood and a truncated cylindrical confluence section, to construct a liquid splash zone and a splash buffer zone. Combined with negative pressure suction, it can achieve graded interception and guidance of high kinetic energy fluids, and perform gas-liquid control in conjunction with a specific spraying method.
It effectively prevents the escape of mist-like fluids, reduces equipment costs, improves wafer development yield and equipment maintenance efficiency, and ensures the cleanliness of the process environment.
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Figure CN122172515A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor equipment technology, and mainly to a spray developing hood and spraying method for circulating and purifying a two-fluid process environment. Background Technology
[0002] In semiconductor wafer manufacturing, development is a crucial step following photolithography. As process nodes continue to shrink, two-fluid atomization technology is widely used due to its superior spraying coverage to ensure uniform coverage and sufficient reaction of the developer on the wafer surface. Compared to traditional columnar spraying, two-fluid nozzles atomize the developer using high-pressure gas, spraying it in fan-shaped patterns at different angles, thus more thoroughly cleaning residual adhesive from fine patterned structures.
[0003] However, while two-fluid atomization technology brings process advantages, it also presents challenges to environmental control within the process chamber. The atomized developer is lightweight and has high kinetic energy, making it prone to splashing throughout the chamber. Current technologies typically employ a vertical cylindrical cover, increasing the cover's height relative to the nozzle to physically prevent liquid splashing. This design may be effective for high-energy columnar jets, but it falls short when facing complex developing processes. To ensure full coverage of the wafer with the developer, current processes often use multiple nozzles or assemble them at various angles. A simple annular vertical cover is insufficient to effectively block liquid ejected from the edge nozzles, resulting in large areas of the chamber outside the process unit being covered by liquid. Simultaneously, some tiny droplets, due to impact and rebound, form spiraling upward airflows and still escape outside the cover. This simple "tall barrel" design, constantly increasing the cover height to prevent mist escape, forces an increase in the lifting stroke of the developing arm mechanism and the overall height of the equipment, driving up equipment costs and space requirements. More seriously, the escaping mist-like liquid can accumulate at the edges of the process unit, on the floor, and on the swing arm mechanism. Over time, this can form stubborn residues that are difficult to clean and may even flow back into the clean area. In addition, when the robotic arm (Fork) enters the unit to pick up or place wafers, droplets remaining on the top or inner wall of the protective cover may fall onto the wafer or Fork due to their own weight, which directly threatens production yield and the cleanliness of the process environment.
[0004] In summary, developing a spray developing hood suitable for circulating purification two-fluid process environments is of crucial technical value in overcoming the current bottlenecks in cleanliness maintenance and waste liquid residue in two-fluid atomization processes. This device can effectively solve the problems of cross-contamination in the cavity and chemical dripping caused by the disordered diffusion and accumulation of atomized fluids, significantly improving wafer developing yield and equipment maintenance efficiency. Summary of the Invention
[0005] In view of the technical problems in the prior art, such as the easy splashing and escape of the two-fluid atomized developer solution, which contaminates the cavity environment, the difficulty in effectively blocking the escape of mist from multiple nozzles, and the risk of residual droplets dripping, this application proposes a spray developer hood and spraying method for circulating and purifying the two-fluid process environment.
[0006] According to one aspect of the present invention, a spray developing hood for circulating purification of a two-fluid process environment is provided, comprising a top cover, a sealing gasket, and a top cover stacked sequentially from top to bottom; the top cover includes an upwardly convex conical guide hood and a truncated cylindrical confluence portion extending vertically downward from the edge of the conical guide hood; the inner wall of the conical guide hood and the inner wall of the truncated cylindrical confluence portion form a liquid splash zone; the top cover covers the conical guide hood, and the top cover and the conical guide hood form a splash buffer zone; the sealing gasket is disposed at the connection between the top cover and the top cover to form a seal; the liquid splash zone communicates with the splash buffer zone; both the top cover and the conical guide hood have nozzle slots for the entry of two-fluid nozzles. This application, by constructing a liquid splash zone and a splash buffer zone, and in conjunction with the truncated cylindrical confluence portion, achieves graded interception and efficient diversion of high-kinetic-energy fluids in a two-fluid mist spraying process.
[0007] Preferably, the sidewall height of the oblique cylindrical confluence portion varies continuously along the circumference, and the sidewall has a highest sidewall section and a lowest sidewall section arranged opposite to each other. The splashed liquid eventually collects at the lowest sidewall section and is discharged. Compared with traditional cylindrical tubes of uniform height, this height-gradient design can create a directional gravitational potential energy difference within the cavity, forcing all liquids adhering to the inner wall to actively flow towards the lowest point, i.e., the lowest sidewall section, thereby achieving concentrated liquid flow and preventing disorderly accumulation or eddy formation of liquid around the bottom of the enclosure.
[0008] More preferably, a return flow hole is provided at the junction of the conical guide shroud and the truncated cylindrical confluence section. This return flow hole is located on one side corresponding to the lowest sidewall section and connects the liquid splash zone and the splash buffer zone. The return flow hole opens up the liquid path between the two layers. Liquid entering the splash buffer zone will also flow to this side under gravity and converge into the lowest point of the liquid splash zone through this hole, thereby achieving unified recovery of the inner and outer layers of liquid and preventing liquid accumulation within the interlayer.
[0009] More preferably, a drain port is provided at the bottom of the lowest sidewall section, and the drain port is connected to the plant recovery pipeline.
[0010] More preferably, the lower part of the highest sidewall section is a transport port for wafer entry and exit. Due to the gravity-guided flow characteristics of the truncated cylindrical section, the liquid on the inner wall of the truncated cylindrical confluence section will naturally flow rapidly along the slope to the lowest sidewall section on the opposite side for collection. As the upstream of the flow guide, the inner wall of the highest sidewall section will not form liquid droplets or stagnation, thereby eliminating the risk of liquid dripping and contaminating the wafer or the robotic arm (Fork).
[0011] Preferably, the nozzle slot is a rectangular through-slot extending radially; the nozzle slot of the upper cover and the nozzle slot of the conical guide shroud are aligned vertically to form a nozzle movement channel connecting the external environment and the liquid splash zone. The rectangular through-slot is suitable for process paths involving multiple nozzles or a single nozzle scanning radially, satisfying nozzle movement requirements while minimizing the opening area at the top to reduce mist escape.
[0012] Preferably, the system further includes a gas-liquid collection box surrounding the oblique cylindrical confluence section. The gas-liquid collection box is equipped with a negative pressure suction port for capturing atomized fluid escaping into the external environment. The gas-liquid collection box is used to collect and retain trace amounts of liquid that may seep from the assembly gaps of the cover, and simultaneously absorbs the atomized aerosol using negative pressure, thereby effectively preventing excess gas from escaping to the outside of the machine and avoiding secondary pollution to the surrounding process environment.
[0013] Preferably, the top cover is detachably mounted on top of the upper cover using fixing screws. This detachable structure facilitates regular maintenance and allows for thorough cleaning of the crevices inside the splash buffer zone.
[0014] According to a second aspect of the present invention, a two-fluid nozzle spraying method adapted to the spray developing hood is provided, wherein the following steps are performed sequentially within a single production cycle: S1. Simultaneously spraying developer and nitrogen gas to form a gas-liquid mixture that covers the wafer surface for development reaction, with some splashed liquid entering the splash buffer. S2. Stop spraying nitrogen gas, only spray developer to rinse the reactant mixture on the wafer surface; S3. Stop spraying developer and only spray nitrogen gas to blow the residual liquid adhering to the inner surface of the liquid splash area to the oblique cylindrical confluence section; S4. Stop injecting nitrogen gas, control the wafer rotation, and fling out the remaining liquid on the wafer surface. The liquid is then guided out along the inner wall of the oblique cylindrical confluence section.
[0015] Preferably, the spraying time of the developer and nitrogen in S1 is 88s, the spraying time of the developer in S2 is 15s, the spraying time of the nitrogen in S3 is 15s, and the wafer rotation time in S4 is 10s. This design ensures sufficient development while providing enough time for gas-liquid separation and inner wall purging, thus achieving optimal cleaning performance with the device.
[0016] Compared with the prior art, this application has the following beneficial effects: This application is specifically designed for complex operating conditions where multiple two-fluid nozzles work in the same unit and generate a large amount of liquid in a short period of time. By constructing a splash buffer and a liquid splash zone, it can effectively buffer and contain high-energy atomized fluid. In addition, the gravity guiding characteristics of the inclined cylindrical confluence section force the liquid to quickly gather to the lowest point for discharge, thereby ensuring that the liquid will not remain or escape to the swing arm cover, floor and edge positions outside the process unit.
[0017] This application utilizes the height difference design of the truncated cylindrical manifold to naturally form a transport port for wafer entry and exit at the shorter side wall. This design eliminates the need to raise the developing hood as a whole to avoid the robotic arm, thereby avoiding the increase in the lifting stroke of the developing arm mechanism and effectively reducing the overall height of the equipment and manufacturing costs. It also eliminates the risk of residual liquid droplets falling onto the wafer or onto the fork when the fork enters.
[0018] This application adopts a split-type cover design to construct a relatively sealed process chamber, which effectively isolates external disturbances and environmental intrusions, ensuring process stability. At the same time, the structure is easy to disassemble for deep cleaning of internal surface residues, and the fitting degree of fluid simulation analysis can be verified by observing the actual flow field direction, accumulating experience for subsequent process optimization. Attached Figure Description
[0019] The accompanying drawings are included to provide a further understanding of the embodiments and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments and, together with the description, serve to explain the principles of this application. Other embodiments and many anticipated advantages of these embodiments will be readily recognized as they become better understood through reference to the following detailed description. Elements in the drawings are not necessarily to scale. The same reference numerals refer to corresponding similar parts.
[0020] Figure 1 A schematic diagram of the overall structure of a spray developer hood for circulating purification of a two-fluid process environment according to an embodiment of this application is shown; Figure 2 An exploded view of a spray developer hood structure for circulating purification of a two-fluid process environment, according to an embodiment of this application, is shown. Figure 3A schematic diagram of the liquid splash zone and splash buffer zone according to an embodiment of this application is shown; Figure 4 A bottom view of a spray developer hood for circulating purification of a two-fluid process environment is shown according to an embodiment of this application; Figure 5 A schematic diagram of wafer handling according to an embodiment of this application is shown.
[0021] The attached diagram is labeled as follows: 1-Top cover, 101-Top cover nozzle slot, 2-Sealing gasket, 3-Top cover, 301-Conical guide shroud, 302-Cut cylindrical confluence section, 3021-Highest sidewall section, 3022-Lowest sidewall section, 303-Return flow hole, 304-Top cover nozzle slot, 4-Liquid splash zone, 5-Splash buffer zone, 6-Robot arm (Fork), 7-Wafer. Detailed Implementation
[0022] The present application will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for illustrative purposes only and are not intended to limit the invention. Furthermore, it should be noted that, for ease of description, only the parts relevant to the invention are shown in the accompanying drawings.
[0023] Where there is no conflict, the embodiments and features described in this application can be combined with each other. This application will now be described in detail with reference to the accompanying drawings and embodiments.
[0024] A spray developing hood for circulating purification of a two-fluid process environment, reference Figure 1 and Figure 2 It includes the top cover 1, sealing gasket 2 and top cover 3 stacked from top to bottom.
[0025] Specifically, the upper cover 1 and the upper cover 3 are preferably made of corrosion-resistant and smooth stainless steel to ensure structural strength and facilitate the cleaning of residual liquid on the surface. Simultaneously, the smooth surface significantly reduces the adhesion friction of the fluid, allowing liquid splashed onto the inner wall to overcome surface tension and quickly slide down under gravity, effectively preventing liquid from adhering to the inner wall or drying and crystallizing. The upper cover 1 and the upper cover 3 are detachably installed and locked using fixing screws. This split design allows maintenance personnel to periodically open the upper cover 1 for deep cleaning of hard-to-reach internal spaces, preventing liquid crystallization. It also allows for verification of the flow field design's rationality by observing liquid flow marks on the inner wall. The sealing gasket 2 is clamped at the connection edge between the upper cover 1 and the upper cover 3, playing a crucial sealing role and preventing leakage of internal high-pressure atomized gas from the connection gap.
[0026] Specifically, the upper cover 3 includes an upwardly convex conical guide cover 301 and a truncated cylindrical confluence section 302 extending vertically downward from the edge of the conical guide cover 301. The conical cover allows liquid adhering to the top to slide down quickly, preventing liquid accumulation at the top; while the sidewall height of the truncated cylindrical confluence section 302 changes continuously along the circumferential direction, thus forming a highest sidewall section 3021 and a lowest sidewall section 3022 oppositely arranged on the sidewall. This height difference design ensures that no matter where the liquid splashes onto the cylinder wall, gravity will drive it to converge towards the lowest sidewall section 3022. A drain port is provided at the bottom of the lowest sidewall section 3022, which connects to the plant recovery pipeline to realize the recovery of waste liquid.
[0027] Specifically, refer to Figure 3 The inner wall of the conical flow guide hood 301 and the inner wall of the oblique cylindrical confluence part 302 form a liquid splash zone 4. The upper cover 1 covers the conical flow guide hood 301, and a splash buffer zone 5 is formed between the inner surface of the upper cover 1 and the outer surface of the conical flow guide hood 301. The liquid splash zone 4, as the main process space, restricts most of the directly sprayed and first-stage splashed developer. However, the two-fluid jet generates some extremely high-energy micro-droplets. These droplets, upon impacting the wafer, easily form a spiraling upward airflow and escape from the developer hood. The splash buffer zone 5, as a buffer layer, effectively captures these escaping droplets, causing them to collide, condense, and settle on the inner wall of the layer, thereby blocking the direct diffusion path of the mist to the external environment.
[0028] To achieve liquid recovery within splash buffer 5, refer to Figure 4 A return flow hole 303 is provided at the junction of the conical guide shroud 301 and the truncated cylindrical confluence section 302, located on one side of the lowest sidewall section 3022. The return flow hole 303 connects the liquid splash zone 4 and the splash buffer zone 5. After condensation, the liquid entering the splash buffer zone 5 will also flow to the lowest point of the zone under the influence of gravity, i.e., the position corresponding to the lowest sidewall section 3022, and then flow back to the liquid splash zone 4 through the return flow hole 303, eventually merging with the waste liquid in the liquid splash zone 4 and being discharged together through the drain port. This design ensures that there are no dead corners for liquid accumulation inside the interlayer.
[0029] Continue to refer to Figure 4 In order to coordinate with the movement of the two-fluid nozzle, the top of the upper cover 1 and the conical guide shroud 301 are provided with an upper cover nozzle slot 101 and an upper cover nozzle slot 304 for the two-fluid nozzle to enter.
[0030] In a specific embodiment, both the upper cover nozzle slot 101 and the upper cover nozzle slot 304 are radially extending rectangular through slots, aligned vertically to form a nozzle movement channel connecting the external environment and the liquid splash area 4. The rectangular through slot design not only meets the radial scanning requirements of a single nozzle but is also specifically designed for multiple nozzle modules arranged in a linear array (i.e., in a row) or matrix. It allows multiple nozzles arranged side-by-side to simultaneously extend into the cavity and perform moving spraying covering the entire wafer under the guidance of the slot. Simultaneously, the width of the rectangular through slot is adapted to the overall arrangement width of the nozzle modules, thereby ensuring uniform development over a large area while minimizing the opening area at the top and reducing mist escape.
[0031] Specifically, below the highest sidewall section 3021 is the transport port for wafer 7 to enter and exit, see reference. Figure 5 The natural space left in the highest sidewall section 3021 serves as a passage for the robotic arm 6 (Fork) to enter and exit, eliminating the need to increase the overall height of the developing mask to avoid Fork 6, thus reducing equipment costs and arm travel. At the same time, since the overall flow direction of the oblique cylindrical manifold 302 is towards the lowest sidewall section 3022 on the opposite side, the liquid on the inner wall of the highest sidewall section 3021 located directly above the transport port will flow away quickly and will not accumulate there, thus eliminating the risk of residual liquid dripping and contaminating the wafer 7 or Fork 6.
[0032] Specifically, the spray developing hood for circulating and purifying the two-fluid process environment also includes a gas-liquid collection box (not shown in the figure) surrounding the oblique cylindrical manifold 302. This gas-liquid collection box is equipped with a negative pressure suction port, primarily used to collect the atomized fluid escaping from the top cover nozzle slot 101 and the top cover nozzle slot 304. Although the slots are designed to be elongated to minimize opening size, a small amount of extremely fine aerosol inevitably escapes outwards along the slots during the two-fluid high-pressure spraying process. At this time, the outer gas-liquid collection box uses negative pressure to form a suction barrier, capturing and collecting this portion of the atomized fluid escaping from the slots in a timely manner, thereby preventing excess gas from evaporating and diffusing outside the machine and avoiding secondary pollution of the cleanroom environment.
[0033] In a specific embodiment, a temperature and humidity control airflow field component is configured on the top of the developing hood to create an active clean process environment. This airflow field performs precise environmental control, accurately locking the temperature and humidity of the process environment by delivering clean air with constant parameters, thereby ensuring the uniformity of the developing reaction rate and the accuracy of the linewidth. Simultaneously, the vertical downward airflow generated by this airflow field forms an effective aerodynamic downward pressure air curtain, which can counteract the high-kinetic-energy backsplash generated by the two-fluid mist spray, significantly reducing or even suppressing the upward vortex tendency of the atomized fluid within the developing hood, and helping to confine aerosols within the splash buffer and liquid splash zone. Furthermore, the clean air supply at the top can be linked with the negative pressure suction device configured below the developing unit to construct a top-down vertical laminar flow circulation clean system, continuously replacing and removing volatile waste gases while maintaining the cleanliness of the developing unit from all directions.
[0034] This application also provides an adapted two-fluid nozzle spraying method, which, through specific process timing control, is deeply integrated with the flow guiding characteristics of the aforementioned hardware structure to achieve the best cleaning effect.
[0035] Specifically, the following steps are executed sequentially within a single production cycle: S1, Gas-liquid mixed jet development 88s: Simultaneously, the developer and high-pressure nitrogen are jetted to form a gas-liquid mixed fluid. The gas-liquid mixed fluid covers the wafer surface in a fan-shaped mist for the development reaction. During this process, some of the high-kinetic-energy splashed liquid and rising airflow are captured and buffered by the splash buffer 5 to prevent leakage. At the same time, the liquid intercepted by the splash buffer 5 will converge under gravity and flow back to the inclined cylindrical confluence part 302 in real time through the return flow hole 303 located at the junction. Then, it flows along the inner wall to the lowest side wall section 3022 and is discharged, thereby ensuring that no liquid accumulates in the interlayer during continuous production.
[0036] S2, Pure liquid rinse for 15s: Stop spraying nitrogen gas, only spray developer to rinse the reactant mixture on the wafer surface; S3, Pure gas purging for 15 seconds: Stop spraying developer solution, only spray nitrogen gas to blow off the residual liquid adhering to the inner wall of liquid splash zone 4. The liquid will flow down the inner wall from the conical guide hood 301 to the truncated cylindrical confluence section 302, where it will be guided by gravity to flow in a directional manner. The liquid adhering to the inner wall of the highest side wall section 3021 cannot overcome gravity and will instead slide down rapidly along the inclined inner wall circumferential path and converge, eventually flowing entirely to the lowest side wall section 3022 in the lowest position.
[0037] S4, Spin dry for 10 seconds: Stop spraying nitrogen, control the wafer to rotate at high speed, and use centrifugal force to throw out the remaining liquid on the wafer surface. The thrown liquid hits the inner wall of the inclined cylindrical confluence section 302 and is quickly guided along the inner wall to the lowest side wall section 3022 for discharge.
[0038] By employing a four-step process of gas-liquid-pure liquid-pure gas-spin-drying, combined with a double-layer flow guide structure in the hardware, this application achieves closed-loop fluid control throughout the entire process, significantly improving the development yield and environmental cleanliness.
[0039] The specific embodiments of this application have been described above, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.
[0040] In the description of this application, it should be understood that the terms "upper," "lower," "inner," "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are used only for the convenience of describing this application and for simplification, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. The word "comprising" does not exclude the presence of elements or steps not listed in the claims. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The simple fact that certain measures are recited in mutually different dependent claims does not indicate that combinations of these measures cannot be used for improvement. Any reference signs in the claims should not be construed as limiting the scope.
Claims
1. A spray developing hood for circulating purification of a two-fluid process environment, characterized in that, The system comprises a top cover, a sealing gasket, and a top cover stacked from top to bottom. The top cover includes an upwardly convex conical guide shroud and a truncated cylindrical confluence extending vertically downward from the edge of the conical guide shroud. The inner wall of the conical guide shroud and the inner wall of the truncated cylindrical confluence form a liquid splash zone. The top cover is placed over the conical guide shroud, and the top cover and the conical guide shroud form a splash buffer zone. The sealing gasket is disposed at the connection between the top cover and the top cover to form a seal. The liquid splash zone communicates with the splash buffer zone. The top of both the top cover and the conical guide shroud has a nozzle slot for the entry of a two-fluid nozzle.
2. The spray developing hood for circulating purification of a two-fluid process environment according to claim 1, characterized in that, The sidewall height of the oblique cylindrical confluence portion changes continuously along the circumferential direction. The sidewall has a highest sidewall section and a lowest sidewall section that are arranged opposite to each other. The splashed liquid eventually collects in the lowest sidewall section and is discharged.
3. The spray developing hood for circulating purification of a two-fluid process environment according to claim 2, characterized in that, A return flow hole is provided at the junction of the conical flow guide shroud and the oblique cylindrical confluence section. The return flow hole is located on one side corresponding to the lowest sidewall section and connects the liquid splash area and the splash buffer zone.
4. The spray developing hood for circulating purification of a two-fluid process environment according to claim 2, characterized in that, The bottom of the lowest sidewall section is provided with a drain port, which is connected to the plant recovery pipeline.
5. The spray developing hood for circulating purification of a two-fluid process environment according to claim 2, characterized in that, Below the highest sidewall section is a transport port for wafers to enter and exit.
6. The spray developing hood for circulating purification of a two-fluid process environment according to claim 1, characterized in that, The nozzle slot is a rectangular through slot extending radially; the nozzle slot of the upper cover and the nozzle slot of the conical guide shroud are aligned in the vertical direction to form a nozzle movement channel connecting the external environment and the liquid splash area.
7. The spray developing hood for circulating purification of a two-fluid process environment according to claim 1, characterized in that, It also includes a gas-liquid collection box surrounding the oblique cylindrical confluence, the gas-liquid collection box being equipped with a negative pressure suction port for capturing atomized fluid that escapes into the external environment.
8. The spray developing hood for circulating purification of a two-fluid process environment according to claim 1, characterized in that, The top cover is detachably installed on top of the upper cover by fixing screws.
9. A method for spraying a two-fluid nozzle adapted to a spray developing hood for circulating purification of a two-fluid process environment as described in any one of claims 1-8, characterized in that, The following steps are executed sequentially within a single production cycle: S1. Simultaneously spraying developer and nitrogen gas to form a gas-liquid mixture that covers the wafer surface for development reaction, with some splashed liquid entering the splash buffer. S2. Stop spraying nitrogen gas, only spray developer to rinse the reactant mixture on the wafer surface; S3. Stop spraying developer and only spray nitrogen gas to blow the residual liquid adhering to the inner surface of the liquid splash area to the oblique cylindrical confluence section; S4. Stop injecting nitrogen gas, control the wafer rotation, and fling out the remaining liquid on the wafer surface. The liquid is then guided out along the inner wall of the oblique cylindrical confluence section.
10. The two-fluid nozzle injection method according to claim 9, characterized in that, The spraying time of the developer and nitrogen in S1 is 88s, the spraying time of the developer in S2 is 15s, the spraying time of the nitrogen in S3 is 15s, and the rotation time of the wafer in S4 is 10s.
