Amorphous phase transition peak modulation system and method based on photon-phonon cooperative excitation

Abstract

The application belongs to the technical field of new energy, and relates to an amorphous phase change peak regulation system and method based on photon-phonon cooperative excitation. The system comprises an optical processor, a phase change calculation unit and a near-field radiation heat transfer module. The phase change calculation unit comprises a copper substrate, an elastic interface modification layer arranged on the copper substrate, an amorphous phase change material layer arranged on the elastic interface modification layer, and a dielectric film layer covering the outer surface of the amorphous phase change material layer. The optical processor is connected with the dielectric film layer. The amorphous phase change material layer is connected with the near-field radiation heat transfer module. The application solves the problems of slow response speed, poor regulation and control capacity, and long energy conversion path in the prior art, and realizes direct, rapid and efficient regulation and control of power fluctuation of a power grid.

Description

Technical Field

[0001] This invention belongs to the field of new energy technology and relates to an amorphous phase transition peak tuning system and method based on photon-phonon synergistic excitation. Background Technology

[0002] As the proportion of renewable energy in the power grid continues to increase, the power fluctuation problem caused by intermittent power sources such as wind power and photovoltaics is becoming increasingly prominent, placing higher demands on the grid's peak-shaving capabilities. In the field of thermal energy storage, phase change materials (PCMs) have been widely studied due to their high energy density and near-isothermal phase change characteristics, and are expected to be used to balance energy supply and demand. For example, some existing technologies attempt to combine phase change thermal storage with grid peak-shaving, using thermal storage devices to store heat during off-peak hours and release heat during peak hours to achieve energy time shifting. However, such systems typically rely on multi-stage energy conversion links such as resistance heating and heat pumps, and have inherent defects such as large thermal inertia and slow dynamic response, making it impossible to effectively track grid power fluctuations on the order of seconds to minutes.

[0003] For example, Chinese patent publication number "CN117385362A" discloses a method for improving the soft magnetic properties of nanocrystalline alloys based on femtosecond laser pretreatment. This method uses femtosecond lasers to process amorphous magnetic alloys, allowing for an energy transfer process from laser photons to metal electrons and then to the metal lattice. Further effective heat treatment is then performed to regulate the soft magnetic properties. Chinese patent publication number "CN113008058A" discloses a photothermal seed bubble micro-evaporator. This device uses a pulsed laser to excite a metal nanoparticle-tipped structure in a microchannel to generate nanobubbles. These bubbles serve as nucleation seeds to control the flow and heat transfer process. The laser power is adjusted using a temperature sensor and control circuit to achieve dynamic regulation of boiling heat transfer.

[0004] However, the aforementioned technologies are difficult to achieve a rapid and efficient thermal response to changes in grid load. They lack an effective mechanism to directly convert electrical signal fluctuations into controllable thermal energy output, and most of them require multiple energy conversion stages, resulting in system response lag and low overall efficiency, which cannot meet the high-sensitivity peak-shaving requirements of modern smart grids. Summary of the Invention

[0005] To address the problems of slow response speed, poor regulation capability, and low efficiency caused by long energy conversion paths in existing technologies for power grid fluctuations, this invention provides an amorphous phase transition peak-shaving system and method based on photon-phonon synergistic excitation, which realizes direct, rapid and efficient regulation of power grid fluctuations.

[0006] To achieve the above objectives, the present invention employs the following technical solution: In a first aspect, the present invention provides an amorphous phase transition peak tuning system based on photon-phonon co-excitation, comprising an optical processor, a phase transition calculation unit, and a near-field radiation heat transfer module; The phase change calculation unit includes a copper substrate, an elastic interface modification layer disposed on the copper substrate, an amorphous phase change material layer disposed on the elastic interface modification layer, and a dielectric film layer covering the outer surface of the amorphous phase change material layer. The optical processor is connected to the dielectric film layer; The amorphous phase change material layer is connected to the near-field radiation heat transfer module.

[0007] Preferably, the optical processor includes: Single-mode fiber laser; An optical fiber beam splitter, the input of which is connected to the output of the single-mode fiber laser; A broadband optoelectronic switch, the input end of which is connected to the main output end of the optical fiber beam splitter; The Fabry-Perot laser cavity is connected to the output terminal of the broadband optoelectronic switch; A precision fiber optic spectrometer is connected to the auxiliary output end of the fiber optic beam splitter.

[0008] Preferably, the optical processor further includes a central control unit; the central control unit is connected to the precision fiber optic spectrometer, the single-mode fiber laser, and the broadband photoelectric switch, respectively.

[0009] Preferably, the amorphous phase change material layer is a nanopillar array structure.

[0010] Preferably, the elastic interface modification layer is made of boron nitride or gallium oxide.

[0011] Preferably, the amorphous phase change material layer is made of Sb2S3.

[0012] Preferably, the dielectric film layer is made of silicon oxide or titanium dioxide.

[0013] Preferably, the near-field radiation heat transfer module includes a heat carrier; the heat carrier is connected to the amorphous phase change material layer.

[0014] Preferably, the heat carrier is made of metal, graphene, or thermally conductive silicon wafer.

[0015] Secondly, this invention provides an amorphous phase transition peak tuning method based on photon-phonon synergistic excitation, comprising the following steps: S1. The power grid power fluctuation signal is converted into a laser pulse sequence with specific parameters by the optical processor. S2. The laser pulse sequence is guided to the dielectric film layer of the phase change computing unit. After being scattered by the dielectric film layer, it is coupled to the amorphous phase change material layer and absorbed, thereby triggering photon-phonon co-excitation of the amorphous phase change material layer. S3. The amorphous phase change material layer, excited by photons and phonons, undergoes a rapid phase transition from amorphous to crystalline and releases latent heat of phase transition. S4. The latent heat of phase change is extracted and transferred through the near-field radiation heat transfer module to heat the heat transfer medium flowing through it. S5. Utilize the heated heat transfer medium to drive subsequent thermodynamic cycles or directly supply heat, thereby achieving regulation of power grid fluctuations and energy storage.

[0016] Compared with the prior art, the present invention has the following beneficial effects: This invention achieves efficient energy conversion and rapid peak shaving by constructing an integrated system comprising an optical processor, a phase change computing unit, and a near-field radiation heat transfer module. The optical processor converts grid power fluctuation signals into laser pulse sequences, providing precise optical control for subsequent excitation. The phase change computing unit absorbs photon energy through its amorphous phase change material layer and triggers photon-phonon synergistic excitation, initiating rapid solid-state phase changes on the nanosecond to microsecond scale. This overcomes the significant thermal inertia of traditional thermal storage systems and effectively responds to grid power fluctuations on the second to minute scale. Simultaneously, an elastic interface modification layer effectively alleviates thermomechanical stress during the phase change process, a copper substrate provides structural support and thermal diffusion, and a dielectric film layer enhances optical coupling, collectively ensuring the reliability of the phase change process and the photothermal conversion efficiency. The system employs a direct "light → heat (latent heat of phase change)" conversion path, avoiding multi-stage energy losses in traditional electrothermal conversion. Furthermore, the near-field radiation heat transfer module connects to and extracts the latent heat of phase change, breaking through the far-field blackbody radiation limit in its heat transfer process, achieving high-throughput, low-loss extraction of latent heat, thereby significantly improving overall energy utilization efficiency. Furthermore, this integrated structure compactly integrates optical processing, phase change calculation, and high-efficiency heat transfer modules, providing a feasible technical foundation for building miniaturized, modular distributed power grid peak-shaving equipment.

[0017] Furthermore, in terms of controllability and reliability, the central control unit can achieve precise control of the phase transition process and heat release by accurately adjusting the energy, pulse width and frequency of the laser pulse. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of an amorphous phase transition peak tuning system based on photon-phonon synergistic excitation according to the present invention; Figure 2 This is a schematic diagram of the phase transition calculation unit of the present invention; Figure 3 This is a flowchart of an amorphous phase transition peak tuning method based on photon-phonon co-excitation according to the present invention.

[0020] The components include: 1. Single-mode fiber laser; 2. Precision fiber optic spectrometer; 3. Broadband optoelectronic switch; 4. Fabry-Perot laser cavity; 5. Dielectric film layer; 6. Amorphous phase change material layer; 7. Elastic interface modification layer; 8. Copper substrate; 9. Heat carrier; 10. Photon-phonon co-excitation region; 11. Heat transfer path; 12. Low-temperature working fluid inlet; 13. High-temperature working fluid outlet; and 14. Central control unit. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0022] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0023] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0024] In the description of the embodiments of the present invention, it should be noted that if terms such as "upper," "lower," "horizontal," or "inner" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of the invention is in use, they are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention. Furthermore, terms such as "first" and "second" are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0025] Furthermore, the use of the term "horizontal" does not imply that the component must be absolutely horizontal, but rather that it can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0026] In the description of the embodiments of the present invention, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in the present invention according to the specific circumstances.

[0027] The present invention will now be described in further detail with reference to the accompanying drawings: The first objective of this invention is to provide an amorphous phase transition peak tuning system based on photon-phonon co-excitation, such as... Figures 1-2 As shown, it includes an optical processor, a phase change computing unit, and a near-field radiation heat transfer module; The phase change calculation unit includes a copper substrate 8, an elastic interface modification layer 7 disposed on the copper substrate 8, an amorphous phase change material layer 6 disposed on the elastic interface modification layer 7, and a dielectric film layer 5 covering the outer surface of the amorphous phase change material layer 6. The optical processor is connected to the dielectric film layer 5; The amorphous phase change material layer 6 is connected to the near-field radiation heat transfer module.

[0028] This invention integrates optical excitation, phase transition response, and near-field heat transfer mechanisms to construct a technical path that directly drives phase transition with optical signals and converts it into adjustable thermal output, achieving efficient and rapid response to power grid fluctuations. Specifically, the optical processor generates controllable laser pulses, encoding external power grid fluctuation signals into optical excitation with specific parameters; the phase transition calculation unit, as the core functional module, handles the coupling process of light energy absorption, phonon excitation, and phase transition reaction; and the near-field radiation heat transfer module is responsible for efficiently extracting the latent heat released during the phase transition and transferring it to the heat transfer medium, completing energy storage and reuse.

[0029] The optical processor is optically coupled to the dielectric film layer 5 via an optical fiber link, ensuring precise delivery of laser energy into the system. The laser source used can be a continuous wave or pulsed single-mode fiber laser 1, whose output is modulated to form a sequence of optical pulses with adjustable frequency and intensity to match the fluctuation characteristics of power grids with different amplitudes and frequencies. After the optical pulse is incident on the dielectric film layer 5, it undergoes multiple scattering, which prolongs the propagation path of light within the amorphous phase change material layer 6 and improves the light absorption efficiency.

[0030] The copper substrate 8 in the phase change computing unit serves as a supporting structure, possessing both excellent thermal conductivity and mechanical stability. It can be used to quickly dissipate locally accumulated heat, preventing structural failure due to thermal stress concentration. The elastic interface modification layer 7 disposed on it acts as a buffer layer, alleviating interface stress caused by volume expansion or contraction during repeated phase changes in the amorphous phase change material, thereby improving device cycle life and reliability. This elastic interface modification layer 7 can be composed of materials with high elastic modulus and good thermal matching properties, such as two-dimensional materials like boron nitride (BNNS) or wide-bandgap semiconductor gallium oxide (Ga2O3), with its thickness controlled within the range of 20-30 nm to balance stress relief and minimize thermal resistance.

[0031] The amorphous phase change material layer 6 is the core functional layer for energy conversion. After absorbing photon energy, it triggers electronic transitions and converts the photon-phonon co-excitation wavelength λ and excitation energy E into amorphous-crystalline thermal energy with temperature fluctuations through electron-phonon coupling, initiating a rapid transition of the material from an amorphous to a crystalline state. This phase transition process is accompanied by a significant release of latent heat, which forms the basis for subsequent thermal energy extraction. This material layer can be made of chalcogenide systems, such as Sb₂S₃, which are amorphous materials with significant optical contrast and reversible phase transition properties, with a thickness ranging from 100 to 150 μm to balance light absorption depth and thermal conductivity efficiency.

[0032] The dielectric film 5 coats the outer surface of the amorphous phase change material layer 6. Its main function is to enhance the local field strength and scattering effect of incident light, thereby improving the photon trapping capability. This film can be made of a dielectric material with a high refractive index or a porous microstructure, such as silicon dioxide (SiO2) or titanium dioxide (TiO2). By controlling its thickness within the range of 50~200μm and its microstructure, broadband and strong scattering characteristics can be achieved, further promoting the residence time and absorption probability of photons in the material layer.

[0033] The amorphous phase change material layer 6 establishes a thermal connection with the near-field radiation heat transfer module, enabling the heat generated during the phase change process to be efficiently transferred to the external heat carrier within an extremely short distance (typically less than the characteristic wavelength of thermal radiation, i.e., entering the near-field region) through radiation and phonon tunneling mechanisms. This near-field heat transfer method breaks through the traditional far-field blackbody radiation limit, significantly improving the energy transfer rate and density, and is suitable for rapid peak-shaving response in high power density scenarios.

[0034] For example, the optical processor includes: Single-mode fiber laser 1; An optical fiber beam splitter, the input of which is connected to the output of the single-mode fiber laser 1; Broadband photoelectric switch 3, the input end of which is connected to the main output end of the optical fiber beam splitter; The Fabry-Perot laser cavity 4 is connected to the output terminal of the broadband photoelectric switch 3; The precision fiber optic spectrometer 2 is connected to the auxiliary output end of the fiber optic beam splitter.

[0035] The single-mode fiber laser 1 serves as the core light source, outputting a continuous laser beam with stable wavelength and pure spectrum. Its operating wavelength range covers the visible to near-infrared region (e.g., 532nm or 1550nm), supporting long-term stable operation and suitable for high-fidelity mapping of power grid fluctuation signals. The fiber beam splitter divides the output light from the single-mode fiber laser 1 into two independent optical paths: the main path enters the broadband photoelectric switch 3, and the auxiliary path enters the precision fiber spectrometer 2 for real-time monitoring of the light source status. This splitting ratio can be set according to actual needs to balance the power efficiency of the main channel and the signal-to-noise ratio of the monitoring channel.

[0036] Specifically, the main output is connected to a broadband optoelectronic switch 3, which has a fast response time of nanoseconds (≤10ns). It can rapidly modulate continuous laser light according to external electrical signals, generating a laser pulse sequence with adjustable frequency (e.g., 10~100kHz) and controllable pulse width, adapting to the dynamic spectral characteristics of power grid fluctuations. The input of the broadband optoelectronic switch 3 is directly coupled to the main output of the fiber optic beam splitter, ensuring low insertion loss and high modulation stability. The modulated pulsed laser light is guided to a Fabry-Perot laser cavity 4, which consists of a pair of highly reflective mirrors forming a multi-beam interference structure. Under specific incident conditions, this structure can excite a supercontinuum effect, significantly broadening the output spectral bandwidth and enhancing the absorption efficiency of photon energy in the amorphous phase change material layer 6. This is particularly beneficial for exciting broadband phonon modes and promoting the photon-phonon co-excitation process.

[0037] Meanwhile, the auxiliary output of the fiber optic beam splitter is connected to a precision fiber optic spectrometer 2 for online, real-time spectral monitoring of the original laser output or the split signal, acquiring key parameters such as wavelength stability, intensity fluctuations, and spectral shape changes. This spectrometer features high resolution (better than 0.1 nm) and a wide dynamic range, enabling millisecond-level data acquisition and providing reliable feedback for the system's closed-loop control. Through this dual-channel design, the main control path focuses on energy transfer and phase transition triggering, while the monitoring path ensures the visualization and adjustability of the system's operating status. These two parallel approaches enhance the overall system's robustness and adaptability.

[0038] The optical processor also includes a central control unit; the central control unit is connected to the precision fiber optic spectrometer 2, the single-mode fiber laser 1, and the broadband photoelectric switch 3. As the core control module of the entire optical processor, the central control unit is responsible for receiving real-time spectral monitoring data and power grid power fluctuation signals from the precision fiber optic spectrometer 2, and sending power adjustment commands to the single-mode fiber laser 1 based on the real-time spectral monitoring data and power grid power fluctuation signals. It also controls the on / off timing of the broadband photoelectric switch 3, thereby generating a laser pulse sequence with specific parameters. Its function is not limited to simple signal forwarding, but rather involves analyzing and processing the input signal based on a preset algorithm, dynamically adjusting parameters such as the frequency, width, and energy of the laser pulses to match the current power grid power fluctuation characteristics. The central control unit can be implemented using a hardware platform with high-speed computing and real-time control capabilities, such as a field-programmable gate array (FPGA), a digital signal processor (DSP), or a microcontroller unit (MCU).

[0039] The precision fiber optic spectrometer 2 is used for online monitoring of the laser in the branch after beam splitting, acquiring information such as wavelength distribution and light intensity changes, and transmitting this data to the central control unit in real time. When the main laser parameters are detected to deviate from the set range, the central control unit can automatically adjust the operating current or temperature of the single-mode fiber laser 1 based on the feedback results, thereby stabilizing the output characteristics. In addition, the central control unit can also establish a self-learning model based on historical data to optimize the control strategy under different operating conditions, improving the system's adaptability and robustness.

[0040] The amorphous phase change material layer 6 is a nanopillar array structure, which is formed by periodic or quasi-periodic arrangement and has a highly ordered geometric morphology. The cross-section of the nanopillars can be circular, elliptical, or polygonal. This array structure can be fabricated on the surface of a copper substrate 8 using micro-nano fabrication processes such as nanoimprinting, electron beam lithography combined with reactive ion etching, and amorphous phase change material can be deposited on it, thereby achieving integrated material and structure. The purpose of the nanopillar array structure is to enhance the energy capture capability of the amorphous phase change material for incident laser light. Due to its large specific surface area and significant localized surface plasmon resonance effect, it can generate a strong optical field localization phenomenon at a specific wavelength, thereby enhancing the photon-phonon coupling efficiency. In addition, the regularly arranged pillar structure is conducive to building directional heat conduction channels, reducing disordered losses during heat diffusion, and making the heat generated by excitation more efficiently concentrated in the phase change region, promoting the rapid transformation from amorphous to crystalline state.

[0041] The near-field radiation heat transfer module includes a heat carrier 9; the heat carrier 9 is connected to the amorphous phase change material layer 6.

[0042] In the near-field radiation heat transfer module, "near-field" refers to the energy transfer mechanism that transcends the traditional blackbody radiation limit through evanescent wave coupling when the distance between two media is smaller than the characteristic wavelength of thermal radiation (typically on the order of micrometers). Under this condition, the photon tunneling effect is significantly enhanced, allowing a large number of energy-carrying non-propagating mode photons to cross the interface, forming a radiation heat transfer channel with extremely high heat flux density. This mechanism breaks through the upper limit of far-field radiation, which is limited by the Stefan-Boltzmann law, and is suitable for applications requiring instantaneous high-power thermal response. The heat carrier 9 is a functional component used to receive and conduct the latent heat of phase change released by the amorphous phase change material layer 6. It establishes direct physical contact with the amorphous phase change material layer 6 to construct a low thermal resistance heat transfer path, ensuring that heat can rapidly migrate from the phase change region to the external heat carrier end.

[0043] The heat carrier 9 is made of metal, graphene, or thermally conductive silicon. The metal material can be copper, aluminum, or silver, as it possesses excellent bulk thermal conductivity, making it suitable for scenarios requiring rapid removal of large amounts of latent heat from phase change. The metal is placed on the outside of the phase change material layer in block or foil form, achieving thermal coupling through physical pressing or low-temperature welding to ensure the establishment of an efficient heat transfer path. Graphene, as a two-dimensional carbon nanomaterial, has extremely high in-plane thermal conductivity, along with good flexibility and chemical stability, making it suitable for constructing flexible thermal interface materials. In practical applications, single-layer or multi-layer graphene films can be prepared by chemical vapor deposition (CVD) and transferred to the target surface to form a continuous thermally conductive network; alternatively, graphene dispersion can be coated onto a substrate and annealed to form a thermally conductive coating, thereby reducing interfacial contact thermal resistance. The thermally conductive silicon wafer is an elastic composite material with organosilicon as the matrix and filled with thermally conductive particles such as alumina and boron nitride. It possesses certain compression resilience and electrical insulation properties, effectively filling microscopic uneven interfaces and improving adhesion and thermal contact area. This material is often used in applications with high electrical safety requirements. Its thickness is usually controlled between 1 and 2 mm, and the compression amount can be adjusted according to the packaging pressure to optimize thermal resistance performance.

[0044] The heat carrier 9 is tightly bonded to the back of the copper substrate 8 of the phase change computing unit via high-performance thermally conductive silicone grease, with a very small gap between them (typically less than 1 micrometer), entering the near-field heat transfer region. When the amorphous phase change material layer 6 undergoes a phase change and releases latent heat, the heat is rapidly conducted to the heat carrier 9 through the copper substrate 8. Due to the near-field effect, the heat carrier 9 can also achieve extremely high heat flux density transfer with the heat transfer medium (such as water or thermal oil) in its adjacent flow channel, exceeding the limits of traditional convective heat transfer. The heat transfer medium flows in from the low-temperature medium inlet 12, absorbs heat, and flows out from the high-temperature medium outlet 13, entering the subsequent power generation or heating cycle.

[0045] The second objective of this invention is to provide a method for preparing an amorphous phase transition peak-tuning system based on photon-phonon co-excitation, such as... Figure 3 As shown, it includes the following steps: S1, Optical Processor Assembly and Debugging S11. Connect and fix the core optical components in sequence, including single-mode fiber laser 1, fiber beam splitter, broadband optoelectronic switch 3, Fabry-Perot laser cavity 4, and precision fiber spectrometer 2.

[0046] S12. Introduce a central control unit (such as an FPGA) and electrically connect it to the single-mode fiber laser 1, the broadband photoelectric switch 3, and the precision fiber spectrometer 2.

[0047] S13. A dedicated control algorithm is embedded in the central control unit, enabling it to receive external wind power fluctuation signals and precisely drive the laser and photoelectric switch accordingly to generate a laser pulse sequence with adjustable frequency, pulse width, and energy. Simultaneously, a precision fiber optic spectrometer 2 is used to monitor the optical path in real time and feed the data back to the central control unit, achieving closed-loop calibration and stabilization of the output laser parameters.

[0048] S2, Copper substrate 8 pretreatment and high-scattering dielectric film etching A copper substrate with high thermal conductivity 8 was selected and subjected to ultrasonic cleaning and surface polishing in sequence to obtain a clean and flat initial surface. Using spin coating technology, a layer of silicon dioxide or titanium dioxide sol is uniformly coated on the prepared copper substrate 8, and then heat-treated to solidify it into a dense high-scattering dielectric film layer 5. Using plasma etching technology, with a pre-designed mask as a shield, the dielectric film layer 5 is selectively etched to form a periodic or quasi-periodic nanopillar array pattern on its surface.

[0049] S3, Spin-coated elastic interface modification layer 7 A dispersion containing boron nitride or gallium oxide is spin-coated onto a patterned substrate using a spin coater to ensure that the dispersion fully fills the gaps between the nanopillar arrays and covers the bottom, forming a uniform thin film. The spin-coated sample is placed in a vacuum drying oven for low-temperature heat treatment. This process effectively removes organic solvents and allows the elastic interface modification layer 7 to form a strong interfacial bond with the underlying dielectric film layer 5.

[0050] S4, Deposition and filling of amorphous phase change material layer 6 Using a vacuum magnetron sputtering system, Sb₂S₃ was sputtered onto a substrate with a pre-prepared elastic interface layer and nanopillar array. The sputtering process parameters were precisely controlled to ensure that the amorphous phase change material was completely and regularly filled into the pre-etched nanopillar mold, ultimately forming an Sb₂S₃ nanopillar array with high specific surface area and excellent light-harvesting capability.

[0051] S5, Polishing and Packaging Chemical mechanical polishing (CMP) was used to lightly polish the deposited stacked structure to remove excess phase change material from the surface, flattening and exposing the top of the nanopillars, thereby forming an independent nanopillar structure that is laterally wrapped by the dielectric film layer. High-precision cutting equipment is used to cut the polished wafer into specific sizes required by the design, resulting in an independent "photon-phonon field synergistic peak tuning integrated device" (i.e., phase transition computing unit).

[0052] S6, System Integration The phase transition computing unit prepared in S5 and the optical processor debugged in S1 are aligned and connected via optical fiber to ensure that the laser pulse can be accurately guided into the dielectric film layer. On the copper substrate 8 side of the phase change computing unit, a near-field heat transfer channel with low thermal resistance is constructed by tightly bonding it to the heat carrier 9 (such as a copper block, graphene film, etc.) with high thermal conductivity silicone grease.

[0053] The third objective of this invention is to provide a method for peak tuning of amorphous phase transitions based on photon-phonon co-excitation, such as... Figure 3 As shown, it includes the following steps: S1. Real-time acquisition of power fluctuation signals from the power grid (e.g., wind power) is converted into standard electrical signals (current I / voltage V). These signals are then input to the central control unit of the optical processor. The control unit, based on a preset algorithm, drives the optical processor to generate a laser pulse sequence that matches the fluctuation characteristics. The frequency, pulse width, and energy of this pulse sequence are precisely controlled to encode the power grid fluctuation information. For example, a large power deficit might correspond to a higher-energy, longer-pulse-width laser pulse.

[0054] S2. The aforementioned laser pulse sequence is guided to the phase transition computing unit via an optical fiber. The laser is incident vertically from above, irradiating the surface of the dielectric film layer 5. The light undergoes multiple scattering within the dielectric film layer 5, with some of the scattered light entering the underlying amorphous phase transition material layer 6. Inside the nanopillar, the absorbed photon energy is converted into lattice vibration energy (phonons) within picoseconds through an electron-phonon coupling process, causing the temperature of the Sb2S3 in the irradiated area to instantaneously exceed its crystallization threshold, forming a photon-phonon co-excitation region 10.

[0055] S3. Driven by photon-phonon co-excitation, amorphous phase change materials undergo a rapid and controllable phase transition from amorphous to crystalline states. This solid-state structural transformation process releases a large amount of latent heat of phase transition, providing the system with concentrated, high-power-density heat output.

[0056] S4. The released latent heat of phase change is efficiently extracted through the near-field radiation heat transfer module. The heat generated by the excitation is conducted downward through the heat transfer path 11, passing through the elastic interface modification layer 7 and entering the copper substrate 8. Since the gap between the phase change material layer and the heat carrier 9 is controlled in the submicron scale "near-field" region, the heat transfer breaks through the traditional blackbody radiation limit. Through photon tunneling and other effects, the heat is transferred to the heat carrier 9 with an extremely high heat flux density, and finally conducted to the heat transfer medium (such as heat transfer oil) that flows through it, causing its temperature to rise rapidly.

[0057] S5. The heated high-temperature working fluid can be used to drive a steam turbine to generate electricity or to directly supply heat, thereby supplementing the power grid, or used as thermal energy storage to smooth the power curve of the power grid.

[0058] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. An amorphous phase transition peak tuning system based on photon-phonon co-excitation, characterized in that, Includes an optical processor, a phase change computing unit, and a near-field radiation heat transfer module; The phase change calculation unit includes a copper substrate (8), an elastic interface modification layer (7) disposed on the copper substrate (8), an amorphous phase change material layer (6) disposed on the elastic interface modification layer (7), and a dielectric film layer (5) covering the outer surface of the amorphous phase change material layer (6). The optical processor is connected to the dielectric film layer (5); The amorphous phase change material layer (6) is connected to the near-field radiation heat transfer module.

2. The amorphous phase transition peak tuning system based on photon-phonon synergistic excitation according to claim 1, characterized in that, The optical processor includes: Single-mode fiber laser (1); An optical fiber beam splitter, the input end of which is connected to the output end of the single-mode fiber laser (1); A broadband optoelectronic switch (3) has its input end connected to the main output end of the optical fiber beam splitter. The Fabry-Perot laser cavity (4) is connected to the output terminal of the broadband optoelectronic switch (3); A precision fiber optic spectrometer (2) is connected to the auxiliary output end of the fiber optic beam splitter.

3. The amorphous phase transition peak tuning system based on photon-phonon synergistic excitation according to claim 2, characterized in that, The optical processor also includes a central control unit (14); the central control unit (14) is connected to the precision fiber spectrometer (2), the single-mode fiber laser (1) and the broadband photoelectric switch (3), respectively.

4. The amorphous phase transition peak tuning system based on photon-phonon synergistic excitation according to claim 1, characterized in that, The amorphous phase change material layer (6) is a nanopillar array structure.

5. The amorphous phase transition peak tuning system based on photon-phonon co-excitation according to claim 1, characterized in that, The elastic interface modification layer (7) is made of boron nitride or gallium oxide.

6. The amorphous phase transition peak tuning system based on photon-phonon co-excitation according to claim 1, characterized in that, The amorphous phase change material layer (6) is made of Sb2S3.

7. The amorphous phase transition peak tuning system based on photon-phonon synergistic excitation according to claim 1, characterized in that, The dielectric film layer (5) is made of silicon oxide or titanium dioxide.

8. The amorphous phase transition peak tuning system based on photon-phonon synergistic excitation according to claim 1, characterized in that, The near-field radiation heat transfer module includes a heat carrier (9); the heat carrier (9) is connected to the amorphous phase change material layer (6).

9. The amorphous phase transition peak tuning system based on photon-phonon synergistic excitation according to claim 8, characterized in that, The heat carrier (9) is made of metal, graphene or thermally conductive silicon.

10. A method for peak tuning of amorphous phase transition based on photon-phonon co-excitation, characterized in that, The system based on any one of claims 1 to 9 includes the following steps: S1. The power grid power fluctuation signal is converted into a laser pulse sequence with specific parameters by the optical processor. S2. The laser pulse sequence is guided to the dielectric film layer (5) of the phase change computing unit. After being scattered by the dielectric film layer (5), it is coupled to the amorphous phase change material layer (6) and absorbed, causing the amorphous phase change material layer (6) to undergo photon-phonon co-excitation. S3. The amorphous phase change material layer (6) excited by photons and phonons undergoes a rapid phase transition from amorphous to crystalline and releases latent heat of phase transition. S4. The latent heat of phase change is extracted and transferred through the near-field radiation heat transfer module to heat the heat transfer medium flowing through it. S5. Utilize the heated heat transfer medium to drive subsequent thermodynamic cycles or directly supply heat, thereby achieving regulation of power grid fluctuations and energy storage.

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