Semiconductor structure and method of forming the same

Abstract

A semiconductor structure and a method of forming the same, the method comprising: providing a first substrate; forming a sacrificial layer on the first substrate; forming a dielectric structure and a conductive structure within the dielectric structure on the sacrificial layer, the conductive structure comprising a first electrode layer and a connecting layer on the first electrode layer, the dielectric structure comprising opposite first and second faces, the first face exposing a surface of the connecting layer; providing a drive substrate, the drive substrate comprising a device structure; bonding the first substrate to the drive substrate with the first face facing a surface of the drive substrate and the connecting layer electrically connected to the device structure; separating the first substrate and the dielectric structure to expose a surface of the second face; providing a second substrate, a surface of the second substrate comprising a filter layer and a second electrode layer on the surface of the filter layer; forming a liquid crystal layer on the exposed surface of the second face; and joining the second substrate to the drive substrate with the second electrode layer facing the surface of the second face and the liquid crystal layer between the first electrode layer and the second face. The method forms a semiconductor structure with improved light efficiency.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a semiconductor structure and a method for forming the same. Background Technology

[0002] Liquid Crystal On Silicon (LCOS) technology is a technique that applies liquid crystals onto a silicon substrate. It combines the advantages of liquid crystal displays and silicon integrated circuits, offering features such as high resolution, high brightness, high contrast, and fast response. LCOS technology is primarily used in projection displays.

[0003] The core of liquid crystal optics technology is integrating a liquid crystal layer and a driving circuit onto a silicon substrate. The liquid crystal layer is composed of liquid crystal molecules, and the brightness and color of the pixels are adjusted by controlling an electric field to change the alignment of these molecules. The driving circuit is responsible for applying an electric field to the liquid crystal layer and controlling the state of the pixels according to the input signal.

[0004] Liquid crystal optics (LCOS) technology has wide applications in display and projection. The mirrors used in LCOS technology need to have high reflectivity and high light efficiency to ensure image brightness and contrast. Improving reflectivity and light efficiency is a technical challenge. Summary of the Invention

[0005] The technical problem solved by this invention is to provide a semiconductor structure and a method for forming the same, so as to improve the reflectivity and light efficiency of liquid crystal optics.

[0006] To address the aforementioned technical problems, the present invention provides a method for forming a semiconductor structure, comprising: providing a first substrate; forming a sacrificial layer on the first substrate; forming a dielectric structure and a conductive structure within the dielectric structure on the sacrificial layer, the conductive structure including a first electrode layer and a connection layer on the first electrode layer, the dielectric structure including a first surface and a second surface opposite to each other, the first surface exposing the surface of the connection layer; providing a driving substrate, the driving substrate including a device structure; bonding the first substrate to the driving substrate, the first surface facing the surface of the driving substrate, the connection layer being electrically connected to the device structure; separating the first substrate and the dielectric structure to expose the second surface; providing a second substrate, the surface of the second substrate including a light filter layer and a second electrode layer located on the surface of the light filter layer; forming a liquid crystal layer on the exposed second surface; bonding the second substrate to the driving substrate, the second electrode layer facing the second surface, the liquid crystal layer being located between the first electrode layer and the second surface.

[0007] Optionally, separating the first substrate and the dielectric structure includes: processing the sacrificial layer with a laser to separate the first substrate and the dielectric structure.

[0008] Optionally, the sacrificial layer may be made of organic materials, including laser-sensitive materials, which can be vaporized and separated after absorbing laser light.

[0009] Optionally, the laser-sensitive material comprises a polymer with imine groups, wherein the polymer with imine groups includes polyimide.

[0010] Optionally, separating the first substrate and the dielectric structure includes: using a laser to decompose and vaporize the sacrificial layer, thereby separating the first substrate from the dielectric structure.

[0011] Optionally, the wavelength range of the laser is less than 400 nanometers.

[0012] Optionally, the material of the sacrificial layer includes an inorganic material, such as silicon oxynitride.

[0013] Optionally, separating the first substrate and the dielectric structure includes: using a laser to separate the sacrificial layer from the first substrate; removing the sacrificial layer to expose the second surface.

[0014] Optionally, the wavelength range of the laser is less than 365 nanometers.

[0015] Optionally, the dielectric structure includes a first dielectric structure and a second dielectric structure, the second dielectric structure exposing the surface of the connection layer, the first electrode layer being located within the first dielectric structure, the connection layer being located within the second dielectric structure, the surface of the second dielectric structure being the first surface, and the surface of the first dielectric structure away from the second dielectric structure being the second surface.

[0016] Optionally, forming a dielectric structure and a conductive structure within the dielectric structure on the sacrificial layer includes: forming a first dielectric structure and a plurality of first grooves within the first dielectric structure on the sacrificial layer, wherein the bottom surface of the first groove is a flat surface and the bottom of the first groove is located within the first dielectric structure; forming a first electrode layer within the first groove; forming a second dielectric structure on the first electrode layer and the first dielectric structure; forming a plurality of second grooves within the second dielectric structure, wherein the bottom of the second groove exposes a portion of the surface of the first electrode layer; and forming the connecting layer within the second groove.

[0017] Optionally, forming a first electrode layer within the first groove includes: forming an electrode material layer within the first groove and on the surface of the first dielectric structure; planarizing the electrode material layer until the surface of the first dielectric structure is exposed, thereby forming the first electrode layer within the first groove.

[0018] Optionally, the first dielectric structure includes: a stop layer and a first dielectric layer located on the stop layer, the first electrode layer being located within the first dielectric layer, and the first electrode layer being in contact with the stop layer.

[0019] Optionally, the material of the stop layer is different from the material of the first dielectric layer.

[0020] Optionally, the density of the stop layer material is greater than that of the first dielectric layer material.

[0021] Optionally, the first electrode layer includes a third surface and a fourth surface opposite to each other, the third surface being away from the connecting layer and the fourth surface being in contact with the connecting layer.

[0022] Optionally, the material of the first electrode layer is the same as the material of the connecting layer.

[0023] Optionally, the projection range of the connecting layer on the first substrate is located within the projection range of the first electrode layer on the first substrate.

[0024] Optionally, the exposed second surface includes a display area; forming a liquid crystal layer on the exposed second surface includes: forming a frame adhesive layer around the display area, the frame adhesive layer having conductive balls within it; and forming a liquid crystal layer on the surface of the display area surrounded by the frame adhesive layer.

[0025] Optionally, the process of forming a liquid crystal layer on the surface of the display area surrounded by the frame adhesive layer includes: a liquid crystal droplet injection process.

[0026] Optionally, bonding the second substrate to the driving substrate includes: aligning and bonding the second substrate to the frame adhesive layer; applying pressure to the second substrate, thereby bonding the second substrate to the second surface through the frame adhesive layer under pressure.

[0027] Optionally, the driving substrate includes: a substrate; a device layer on the substrate, the device layer including an isolation structure and a device structure within the isolation structure, the device structure including a transistor, diode, triode, capacitor, inductor, or conductive structure; a dielectric structure on the device layer; and an electrical connection structure within the dielectric structure, the electrical connection structure being electrically connected to the device structure.

[0028] Optionally, bonding the first substrate to the driving substrate includes: attaching the dielectric structure to the dielectric structure, attaching the connection layer to the electrical connection structure; annealing the first substrate and the driving substrate, and bonding the first substrate to the driving substrate.

[0029] Optionally, the material of the electrical connection structure is the same as the material of the conductive structure.

[0030] Optionally, the thickness of the sacrificial layer is less than 100 angstroms.

[0031] Optionally, the filter layer includes a red filter layer, a blue filter layer, or a green filter layer.

[0032] Accordingly, the present invention also provides a semiconductor structure, comprising: a driving substrate, the driving substrate including a device structure; a dielectric structure bonded to the driving substrate, the dielectric structure including a first surface and a second surface opposite to each other; a conductive structure located within the dielectric structure, the conductive structure including a first electrode layer and a connection layer located on the first electrode layer, the surface of the first surface exposing the surface of the connection layer, the first surface facing the surface of the driving substrate, the connection layer being electrically connected to the device structure; a liquid crystal layer located on the surface of the second surface; and a second substrate bonded to the driving substrate, the surface of the second substrate including a light filter layer and a second electrode layer located on the surface of the light filter layer, the second electrode layer facing the surface of the second surface, the liquid crystal layer being located between the first electrode layer and the second surface.

[0033] Optionally, the dielectric structure includes a first dielectric structure and a second dielectric structure, the second dielectric structure exposing the surface of the connection layer, the first electrode layer being located within the first dielectric structure, the connection layer being located within the second dielectric structure, the surface of the second dielectric structure being the first surface, and the surface of the first dielectric structure away from the second dielectric structure being the second surface.

[0034] Optionally, the first dielectric structure includes: a stop layer and a first dielectric layer located on the stop layer, the first electrode layer being located within the first dielectric layer, and the first electrode layer being in contact with the stop layer.

[0035] Optionally, the material of the stop layer is different from the material of the first dielectric layer.

[0036] Optionally, the density of the stop layer material is greater than that of the first dielectric layer material.

[0037] Optionally, the first electrode layer includes a third surface and a fourth surface opposite to each other, the third surface being away from the connecting layer and the fourth surface being in contact with the connecting layer.

[0038] Optionally, the material of the first electrode layer is the same as the material of the connecting layer.

[0039] Optionally, the projection range of the connecting layer on the first substrate is located within the projection range of the first electrode layer on the first substrate.

[0040] Optionally, the exposed second surface includes a display area; it also includes a frame adhesive layer surrounding the display area, with the liquid crystal layer located on the surface of the display area surrounded by the frame adhesive layer.

[0041] Optionally, the driving substrate includes: a substrate; a device layer on the substrate, the device layer including an isolation structure and a device structure within the isolation structure, the device structure including a transistor, diode, triode, capacitor, inductor, or conductive structure; a dielectric structure on the device layer; and an electrical connection structure within the dielectric structure, the electrical connection structure being electrically connected to the device structure.

[0042] Optionally, the material of the electrical connection structure is the same as the material of the conductive structure.

[0043] Optionally, the filter layer includes a red filter layer, a blue filter layer, or a green filter layer.

[0044] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0045] The method of this invention involves first forming a sacrificial layer and a dielectric and conductive structure on a first substrate, bonding the first substrate to a driving substrate, separating the first substrate and the dielectric structure, forming a liquid crystal layer on the driving substrate, and then bonding a second substrate to the driving substrate. The conductive structure facing the liquid crystal layer formed by this method has good surface flatness and is not damaged by additional processes, thus improving the reflectivity of the conductive structure surface. This improves the light efficiency when subsequent light passes through the liquid crystal layer and is reflected at the conductive structure surface.

[0046] Furthermore, the material of the sacrificial layer includes a laser-sensitive material, which is a polymer with imine groups. The CN bond of the imine group in its molecular structure absorbs laser light of <400nm. Therefore, after absorbing the laser light, the CN bond decomposes and can be broken down into small molecules and vaporized, thereby realizing the ability to separate the first substrate from the dielectric structure.

[0047] Furthermore, the sacrificial layer is made of an inorganic material, including silicon oxynitride. Laser treatment breaks the hydrogen bonds between the silicon oxynitride and the first substrate, thereby enabling the separation of the first substrate from the dielectric structure.

[0048] Furthermore, the material of the electrical connection structure is the same as the material of the conductive structure. Therefore, the process for forming the electrical connection structure and the process for forming the conductive structure can use the same metal processing steps, saving on process costs. Attached Figure Description

[0049] Figure 1 This is a schematic diagram of the semiconductor structure in one embodiment;

[0050] Figures 2 to 12 This is a schematic diagram of the formation process of the semiconductor structure in an embodiment of the present invention. Detailed Implementation

[0051] As described in the background section, improving reflectivity and light efficiency in liquid crystal optics is a technical challenge. This will now be analyzed and explained with reference to specific embodiments.

[0052] Figure 1 This is a schematic diagram of a semiconductor structure in one embodiment.

[0053] Please refer to Figure 1 The semiconductor structure includes: a substrate 100; a device layer (not shown) on the substrate 100, the device layer including: an isolation structure and a device structure within the isolation structure, the device structure including a transistor, diode, triode, capacitor, inductor, or conductive structure; a first dielectric layer 101 on the device layer; a conductive structure 102 within the first dielectric layer 101, the conductive structure 102 being electrically connected to the device structure, the first dielectric layer 101 exposing the surface of the conductive structure 102; and a second dielectric layer 104 on the first dielectric layer 101. The first electrode structure is located within the second dielectric layer 104 and is electrically connected to the conductive structure 102. The first electrode structure includes a first electrode layer 103 and a barrier layer (not shown) located on the sidewall surface and bottom surface of the first electrode layer 103; a first substrate 110; a filter layer (not shown) located on the surface of the first substrate 110; a second electrode layer (not shown) located on the surface of the filter layer; and a liquid crystal layer 111 located on the second dielectric layer 104 and the first electrode layer 103, wherein the liquid crystal layer 111 is located between the first electrode layer 103 and the second electrode layer.

[0054] The method for forming the first electrode structure during the formation of the semiconductor structure includes: forming a second dielectric layer 104 on a first dielectric layer 101 and a conductive structure 102; forming a groove in the second dielectric layer 104 that exposes the surface of the conductive structure 102; forming a barrier material layer on the sidewall surface and bottom surface of the groove, as well as on the surface of the second dielectric layer 104; forming an electrode material layer on the barrier material layer; planarizing the electrode material layer and the barrier material layer until the surface of the second dielectric layer 104 is exposed, thereby forming the first electrode structure in the groove.

[0055] The first electrode layer 103 is electrically connected to the bottom device structure through the conductive structure 102, and is used to apply an electric field to control the liquid crystal deflection of the liquid crystal layer 111 and adjust the transmittance of the reflected polarization. The surface of the first electrode layer 103 formed by planarization is relatively rough. The flatness of the surface of the first electrode layer 103 facing the liquid crystal layer 111 directly affects the reflection efficiency of the reflected light, and thus affects the power consumption of the device.

[0056] The first electrode layer 103 is typically made of aluminum. Although copper has a reflectivity 5% higher than aluminum, the planarization process for copper can easily cause surface unevenness, leading to a decrease in the reflectivity of the first electrode layer 103. Therefore, if a material with higher reflectivity can be used as the first electrode layer 103 without ensuring surface unevenness, the device's reflection efficiency will be significantly improved, thereby reducing power consumption.

[0057] To address the aforementioned problems, the present invention provides a semiconductor structure and its formation method. The method involves first forming a sacrificial layer and a dielectric and conductive structure on a first substrate. After bonding the first substrate to a driving substrate, the first substrate and the dielectric structure are separated. A liquid crystal layer is then formed on the driving substrate, and a second substrate is bonded to the driving substrate. The conductive structure facing the liquid crystal layer formed by this method exhibits good surface flatness, is not damaged by additional processes, and improves the reflectivity of the conductive structure surface. This enhances the light efficiency when subsequent light passes through the liquid crystal layer and is reflected at the conductive structure surface.

[0058] To make the above-mentioned objectives, features and beneficial effects of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0059] Figures 2 to 12 This is a schematic diagram of the formation process of the semiconductor structure in an embodiment of the present invention.

[0060] Please refer to Figure 2 A first substrate 200 is provided; a sacrificial layer 201 is formed on the first substrate 200.

[0061] The first substrate 200 is used to provide structural support for the formation of the sacrificial layer 201.

[0062] In this embodiment, the transmittance of the first substrate 200 is greater than 90%, so that subsequent laser light can pass through the first substrate 200 to process the sacrificial layer 201.

[0063] In this embodiment, the material of the first substrate 200 includes glass, quartz, acrylic, etc.

[0064] In this embodiment, the material of the sacrificial layer 201 includes an organic material, which includes a laser-sensitive material that can be vaporized and separated after absorbing laser light.

[0065] In this embodiment, the laser-sensitive material comprises a polymer with imine groups, and the polymer with imine groups includes polyimide.

[0066] The process for forming the sacrificial layer 201 includes spin coating or spray coating.

[0067] In this embodiment, the thickness of the sacrificial layer 201 is less than 100 angstroms. This thickness range makes the sacrificial layer 201 easy to vaporize with a laser, making the first substrate 200 easy to clean and reusable.

[0068] In other embodiments, the material of the sacrificial layer includes an inorganic material, including silicon oxynitride.

[0069] The process for forming the sacrificial layer includes chemical vapor deposition (CVD), wherein the process gases for CVD include silane and nitrogen.

[0070] Next, a dielectric structure and a conductive structure located within the dielectric structure are formed on the sacrificial layer 201. The conductive structure includes a first electrode layer and a connection layer located on the first electrode layer. The dielectric structure includes a first surface and a second surface opposite to each other, with the first surface exposing the surface of the connection layer. Please refer to [reference needed] for the formation process of the dielectric structure and the conductive structure. Figure 3 To the diagram Figure 6 .

[0071] In this embodiment, the dielectric structure includes a first dielectric structure and a second dielectric structure. The second dielectric structure exposes the surface of the connection layer. The first electrode layer is located within the first dielectric structure, and the connection layer is located within the second dielectric structure. The surface of the second dielectric structure is the first surface, and the surface of the first dielectric structure away from the second dielectric structure is the second surface.

[0072] Please refer to Figure 3 A first dielectric structure is formed on the sacrificial layer 201.

[0073] In this embodiment, the first dielectric structure includes a stop layer 202 and a first dielectric layer 203 located on the stop layer 202.

[0074] In this embodiment, the materials of the stop layer 202 and the first dielectric layer 203 are different. This allows for a wider range of etching options for the stop layer 202 and the first dielectric layer 203.

[0075] In this embodiment, the material density of the stop layer 202 is greater than that of the first dielectric layer 203. This is to ensure that the material structure of the first dielectric layer 203 is relatively loose and easily etched to form grooves, while the material structure of the stop layer 202 is relatively dense. This allows for a wider range of etching options for the stop layer 202 and the first dielectric layer 203, making it easier for the etching process to stop at the surface of the stop layer 202 when etching the first dielectric layer 203.

[0076] The material of the stop layer 202 includes a dielectric material, which includes one or more combinations of silicon oxide, silicon nitride, silicon carbide, silicon carbide, silicon oxynitride, aluminum oxide, aluminum nitride, silicon carbide nitride, and silicon carbide nitride.

[0077] The material of the first dielectric layer 203 includes a dielectric material, which includes one or more combinations of silicon oxide, silicon nitride, silicon carbide, silicon carbide, silicon oxynitride, aluminum oxide, aluminum nitride, silicon carbide nitride, and silicon carbide nitride.

[0078] In this embodiment, the material of the stop layer 202 includes silicon nitride; the material of the first dielectric layer 203 includes silicon oxide or silicon dioxide (SiO2). X (x is greater than 2), the silica material is relatively porous.

[0079] The process for forming the stop layer 202 includes chemical vapor deposition or atomic layer deposition; the process for forming the first dielectric layer 203 includes chemical vapor deposition or atomic layer deposition.

[0080] In other embodiments, the first dielectric structure comprises a single layer of material.

[0081] Please refer to Figure 4 A plurality of first grooves 204 are formed within the first dielectric structure. The bottom surface of the first groove 204 is a flat surface, and the bottom of the first groove 204 is located within the first dielectric structure.

[0082] In this embodiment, the bottom of the first groove 204 exposes the surface of the stop layer 202, and the first groove 204 is located within the first dielectric layer 203.

[0083] The method for forming the first groove 204 includes: forming a patterned mask structure (not shown) on the surface of the first dielectric layer 203; etching the first dielectric layer 203 with the patterned mask structure as a mask until the surface of the stop layer 202 is exposed, thereby forming a plurality of first grooves 204 in the first dielectric structure.

[0084] The etching process for the first dielectric layer 203 includes a dry etching process. The dry etching process facilitates control of the etching rate, allowing the etching process to accurately stop at the surface of the stop layer 202 with minimal damage to the surface of the stop layer 202. This results in a surface with high flatness at the bottom of the stop layer 202 in the first groove, ensuring a smooth surface for the first electrode layer subsequently formed within the first groove, thus meeting the requirements for roughness and reflectivity.

[0085] Please refer to Figure 5 A first electrode layer 205 is formed in the first groove 204.

[0086] In this embodiment, the first electrode layer 205 is located within the first dielectric layer 203, and the first electrode layer 205 is in contact with the stop layer 202.

[0087] Forming a first electrode layer 205 within the first groove 204 includes: forming an electrode material layer (not shown) within the first groove 204 and on the surface of a first dielectric structure; planarizing the electrode material layer until the surface of the first dielectric structure is exposed, thereby forming the first electrode layer 205 within the first groove 204.

[0088] The material of the first electrode layer 205 includes a metal or a metal nitride; the metal includes one or more combinations of copper, aluminum, tungsten, cobalt, nickel and tantalum; the metal nitride includes one or more combinations of tantalum nitride and titanium nitride.

[0089] In this embodiment, the first electrode layer 205 is made of copper. The copper material has a high reflectivity; when light passes through the liquid crystal layer and is reflected from the surface of the first electrode layer 205, the high reflectivity of the surface can adjust the transmittance of the liquid crystal layer's reflected polarization.

[0090] Please refer to Figure 6 A second dielectric structure 207 is formed on the first electrode layer 205 and the first dielectric structure; a plurality of second grooves (not shown) are formed in the second dielectric structure 207, the bottom of the second grooves exposing part of the surface of the first electrode layer 205; and the connecting layer 206 is formed in the second grooves.

[0091] In this embodiment, the first electrode layer 205 includes a third surface and a fourth surface opposite to each other, the third surface being away from the connecting layer 206, and the fourth surface being in contact with the connecting layer 206.

[0092] In this embodiment, the roughness range of the third surface of the first electrode layer 205 is less than 5 nanometers.

[0093] In this embodiment, the reflectivity of the third surface of the first electrode layer 205 is greater than 90%.

[0094] The surface roughness and reflectivity of the first electrode layer 205 formed in the first groove 204 that is in contact with the stop layer 202 both meet the requirements, and low reflectivity metal materials can also meet the requirements.

[0095] In this embodiment, the first electrode layer 205 and the connecting layer 206 are made of the same material. Therefore, the first electrode layer 205 and the connecting layer 206 can be formed using the same metal processing method, saving on manufacturing costs.

[0096] In this embodiment, the projection range of the connecting layer 206 on the first substrate 200 is located within the projection range of the first electrode layer 205 on the first substrate 200. The first electrode layer 205 has a large surface area to provide a larger reflective interface, while the connecting layer 206 has a small cross-sectional area, which can save on the forming process while meeting the conductivity requirements.

[0097] Please refer to Figure 7 A driving substrate is provided, the driving substrate including a device structure.

[0098] In this embodiment, the driving substrate includes: a substrate 300; a device layer (not shown) on the substrate 300, the device layer including an isolation structure and a device structure within the isolation structure, the device structure including a transistor, diode, triode, capacitor, inductor or conductive structure; a dielectric structure on the device layer; and an electrical connection structure within the dielectric structure, the electrical connection structure being electrically connected to the device structure.

[0099] Figure 7 The diagram illustrates that the dielectric structure includes a first dielectric layer 301, a second dielectric layer 303, and a third dielectric layer 305 stacked sequentially. The electrical connection structure includes a first connection structure located in the first dielectric layer 301, a second connection structure located in the second dielectric layer 303, and a third connection structure located in the third dielectric layer 305. The first connection structure, the second connection structure, and the third connection structure are electrically connected to each other.

[0100] The electrical connection structure includes a stacked connection of multiple metal layers or a stacked connection of metal layers and passive devices. Passive devices include inductors, resistors, capacitors, etc. The second connection structure in the figure shows a stacked connection of capacitors and metal layers, the first connection structure shows a stacked connection of multiple metal layers, and the third connection structure shows a stacked connection of multiple metal layers.

[0101] The material of the electrical connection structure includes metals or metal nitrides; the metals include one or more combinations of copper, aluminum, tungsten, cobalt, nickel, and tantalum; the metal nitrides include one or more combinations of tantalum nitride and titanium nitride.

[0102] In this embodiment, the material of the electrical connection structure includes copper.

[0103] In this embodiment, the material of the electrical connection structure is the same as the material of the conductive structure. Therefore, the process for forming the electrical connection structure and the process for forming the conductive structure can use the same metal processing steps, saving process costs.

[0104] Please refer to Figure 8 The first substrate 200 is bonded to the driving substrate, with the first surface facing the surface of the driving substrate, and the connection layer 206 is electrically connected to the device structure.

[0105] The first surface is the surface of the second dielectric structure 207 and the connecting layer 206.

[0106] Bonding the first substrate to the driving substrate includes: attaching the dielectric structure to the dielectric structure, attaching the connection layer 206 to the electrical connection structure; annealing the first substrate 200 and the driving substrate, and bonding the first substrate 200 to the driving substrate.

[0107] In this embodiment, the connection layer 206 is electrically connected to the device structure through the electrical connection structure.

[0108] Please refer to Figure 9 Separate the first substrate 200 and the dielectric structure to expose the second surface.

[0109] The second surface is the surface of the first dielectric structure that is away from the second dielectric structure 207.

[0110] In this embodiment, the second surface is the surface of the stop layer 202 that is away from the first electrode layer 205.

[0111] Separating the first substrate 200 and the dielectric structure includes: using a laser to decompose and vaporize the sacrificial layer 201, thereby separating the first substrate 200 from the dielectric structure.

[0112] In this embodiment, the laser-sensitive material comprises a polymer with imine groups, and the polymer with imine groups includes polyimide.

[0113] In this embodiment, the polymer material with imine groups is a symmetrical cross-linking (SCL) material with the chemical formula CxHyOz, where the values ​​of x, y, and z are all greater than or equal to 1. The chemical formula of the polymer material with imine groups is as follows:

[0114]

[0115] Because the CN bond of the imine group in its molecular structure absorbs laser light of <400nm, the CN bond decomposes after absorbing the laser light and can be broken down into small molecules and vaporized, thereby realizing the ability to separate the first substrate 200 from the dielectric structure.

[0116] In this embodiment, the wavelength range of the laser is less than 400 nanometers.

[0117] In other embodiments, the material of the sacrificial layer includes an inorganic material, including silicon oxynitride.

[0118] Separating the first substrate and the dielectric structure includes: using a laser to separate the sacrificial layer from the first substrate; removing the sacrificial layer to expose the second surface.

[0119] The process gas used to form the sacrificial layer includes silane, which forms a large number of hydrogen bonds between silicon oxynitride and the first substrate. When the sacrificial layer is treated with a laser, the laser will break the hydrogen bonds between the silicon oxynitride and the first substrate, thereby enabling the separation of the first substrate from the dielectric structure.

[0120] The process for removing the sacrificial layer includes dry etching or wet etching.

[0121] Please refer to Figure 10 A second substrate 500 is provided, the surface of which includes a filter layer 501 and a second electrode layer 502 located on the surface of the filter layer 501.

[0122] The filter layer 501 is an organic material that can precisely select a small range of light waves that are desired to pass through, while reflecting away other unwanted light waves.

[0123] The filter layer 501 includes a red filter layer, a blue filter layer, or a green filter layer. The red filter layer allows only red light to pass through, the blue filter layer allows only blue light to pass through, and the green filter layer allows only green light to pass through.

[0124] In this embodiment, the material of the second electrode layer 502 includes indium tin oxide (ITO), fluorine-doped tin dioxide (FTO), or aluminum-doped zinc oxide (AZO).

[0125] In this embodiment, the material of the second substrate 500 includes a high transmittance material, such as quartz, glass, or acrylic.

[0126] Please refer to Figure 11 A liquid crystal layer 403 is formed on the exposed second surface.

[0127] The exposed second surface includes a display area, which is an area that needs to be filled with liquid crystal for liquid crystal display.

[0128] Forming a liquid crystal layer 403 on the exposed second surface includes: forming a frame adhesive layer 401 around the display area, the frame adhesive layer 401 having conductive balls 402 therein; and forming the liquid crystal layer 403 on the surface of the display area surrounded by the frame adhesive layer 401.

[0129] The process of forming a liquid crystal layer 403 on the surface of the display area surrounded by the frame adhesive layer 401 includes: One Drop Filling (ODF).

[0130] The adhesive layer 401 is made of epoxy resin. The adhesive layer 401 provides structural support for the formation area of ​​the liquid crystal layer 403. At the same time, when the second substrate 500 is subsequently bonded to the driving substrate, the adhesive layer 401 enables the second substrate 500 to be bonded to the second surface through the adhesive layer 401, and forms a sealed space with the second surface through the adhesive layer 401, in which the liquid crystal layer 403 can be located.

[0131] In this embodiment, the conductive ball 402 is made of metal, including gold. A plurality of conductive balls 402 are distributed within the adhesive layer 401. When the second substrate 500 is subsequently bonded to the driving substrate, the conductive balls 402 rupture under pressure, releasing metal material to form conductive wires.

[0132] Please refer to Figure 12 The second substrate 500 is bonded to the driving substrate, the second electrode layer 502 faces the second surface, and the liquid crystal layer 403 is located between the first electrode layer 205 and the second surface.

[0133] Joining the second substrate 500 to the driving substrate includes: aligning and bonding the second substrate 500 to the frame adhesive layer 401; applying pressure to the second substrate 500, and under the pressure, joining the second substrate 500 to the second surface through the frame adhesive layer 401.

[0134] Under pressure, the conductive ball 402 ruptures and the metal material flows out, forming a conductive wire.

[0135] The formation method involves first forming a sacrificial layer 201 and dielectric and conductive structures on the sacrificial layer 201 on a first substrate 200, bonding the first substrate 200 to a driving substrate, separating the first substrate 200 and the dielectric structures, forming a liquid crystal layer on the driving substrate, and then bonding the second substrate 500 to the driving substrate. The conductive structure surface facing the liquid crystal layer 403 formed by this method has good flatness and is not damaged by additional processes, improving the reflectivity of the conductive structure surface. This improves the light efficiency when subsequent light passes through the liquid crystal layer 403 and is reflected at the conductive structure surface.

[0136] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A method for forming a semiconductor structure, characterized in that, include: Provide a first substrate; A sacrificial layer is formed on the first substrate; A dielectric structure and a conductive structure located within the dielectric structure are formed on a sacrificial layer. The conductive structure includes a first electrode layer and a connection layer located on the first electrode layer. The dielectric structure includes a first surface and a second surface opposite to each other, and the first surface exposes the surface of the connection layer. A driving substrate is provided, the driving substrate including a device structure; The first substrate is bonded to the driving substrate, with the first surface facing the surface of the driving substrate, and the connection layer is electrically connected to the device structure; Separate the first substrate and the dielectric structure to expose the second surface; A second substrate is provided, the surface of the second substrate including a filter layer and a second electrode layer located on the surface of the filter layer; A liquid crystal layer is formed on the exposed second surface; The second substrate is bonded to the driving substrate, the second electrode layer faces the second surface, and the liquid crystal layer is located between the first electrode layer and the second surface.

2. The method for forming a semiconductor structure as described in claim 1, characterized in that, Separating the first substrate and the dielectric structure includes: processing the sacrificial layer with a laser to separate the first substrate and the dielectric structure.

3. The method for forming a semiconductor structure as described in claim 2, characterized in that, The sacrificial layer is made of organic materials, including laser-sensitive materials, which can be vaporized and separated after absorbing laser light.

4. The method for forming a semiconductor structure as described in claim 3, characterized in that, The laser-sensitive material comprises a polymer with imine groups, including polyimide.

5. The method for forming a semiconductor structure as described in claim 3, characterized in that, Separating the first substrate and the dielectric structure includes: using a laser to decompose and vaporize the sacrificial layer, thereby separating the first substrate from the dielectric structure.

6. The method for forming a semiconductor structure as described in claim 5, characterized in that, The wavelength range of the laser is less than 400 nanometers.

7. The method for forming a semiconductor structure as described in claim 2, characterized in that, The material of the sacrificial layer includes inorganic materials, including silicon oxynitride.

8. The method for forming a semiconductor structure as described in claim 7, characterized in that, Separating the first substrate and the dielectric structure includes: using a laser to separate the sacrificial layer from the first substrate; removing the sacrificial layer to expose the second surface.

9. The method for forming a semiconductor structure as described in claim 8, characterized in that, The wavelength range of the laser is less than 365 nanometers.

10. The method for forming a semiconductor structure as described in claim 1, characterized in that, The dielectric structure includes a first dielectric structure and a second dielectric structure, the second dielectric structure exposing the surface of the connection layer, the first electrode layer being located within the first dielectric structure, the connection layer being located within the second dielectric structure, the surface of the second dielectric structure being the first surface, and the surface of the first dielectric structure away from the second dielectric structure being the second surface.

11. The method for forming a semiconductor structure as described in claim 10, characterized in that, Forming a dielectric structure and a conductive structure within the dielectric structure on a sacrificial layer includes: forming a first dielectric structure and a plurality of first grooves within the first dielectric structure on the sacrificial layer, wherein the bottom surface of the first groove is a flat surface and the bottom of the first groove is located within the first dielectric structure; forming a first electrode layer within the first groove; forming a second dielectric structure on the first electrode layer and the first dielectric structure; forming a plurality of second grooves within the second dielectric structure, wherein the bottom of the second groove exposes a portion of the surface of the first electrode layer; and forming the connecting layer within the second groove.

12. The method for forming a semiconductor structure as described in claim 11, characterized in that, Forming a first electrode layer within the first groove includes: forming an electrode material layer within the first groove and on the surface of a first dielectric structure; planarizing the electrode material layer until the surface of the first dielectric structure is exposed, thereby forming the first electrode layer within the first groove.

13. The method for forming a semiconductor structure as described in claim 10, characterized in that, The first dielectric structure includes: a stop layer and a first dielectric layer located on the stop layer, the first electrode layer being located within the first dielectric layer, and the first electrode layer being in contact with the stop layer.

14. The method for forming a semiconductor structure as described in claim 13, characterized in that, The material of the stop layer is different from the material of the first dielectric layer.

15. The method for forming a semiconductor structure as described in claim 13, characterized in that, The density of the material in the stop layer is greater than that of the material in the first dielectric layer.

16. The method for forming a semiconductor structure as described in claim 1, characterized in that, The first electrode layer includes a third surface and a fourth surface opposite to each other, the third surface being away from the connecting layer and the fourth surface being in contact with the connecting layer.

17. The method for forming a semiconductor structure as described in claim 1, characterized in that, The material of the first electrode layer is the same as that of the connecting layer.

18. The method for forming a semiconductor structure as described in claim 1, characterized in that, The projection range of the connecting layer on the first substrate is located within the projection range of the first electrode layer on the first substrate.

19. The method for forming a semiconductor structure as described in claim 1, characterized in that, The exposed second surface includes a display area; a liquid crystal layer is formed on the exposed second surface, including: A frame adhesive layer is formed around the display area, and conductive balls are contained within the frame adhesive layer; a liquid crystal layer is formed on the surface of the display area surrounded by the frame adhesive layer.

20. The method for forming a semiconductor structure as described in claim 19, characterized in that, The process of forming a liquid crystal layer on the surface of the display area surrounded by the frame adhesive layer includes: a liquid crystal droplet injection process.

21. The method for forming a semiconductor structure as described in claim 19, characterized in that, Joining the second substrate to the driving substrate includes: aligning and bonding the second substrate to the frame adhesive layer; applying pressure to the second substrate, thereby bonding the second substrate to the second surface through the frame adhesive layer under pressure.

22. The method for forming a semiconductor structure as described in claim 1, characterized in that, The driving substrate includes: a substrate; a device layer on the substrate, the device layer including an isolation structure and a device structure within the isolation structure, the device structure including a transistor, diode, triode, capacitor, inductor, or conductive structure; a dielectric structure on the device layer; and an electrical connection structure within the dielectric structure, the electrical connection structure being electrically connected to the device structure.

23. The method for forming a semiconductor structure as described in claim 22, characterized in that, Bonding the first substrate to the driving substrate includes: attaching the dielectric structure to the dielectric structure, attaching the interconnect layer to the electrical interconnect structure; annealing the first substrate and the driving substrate, and bonding the first substrate to the driving substrate.

24. The method for forming a semiconductor structure as described in claim 22, characterized in that, The material of the electrical connection structure is the same as the material of the conductive structure.

25. The method for forming a semiconductor structure as described in claim 1, characterized in that, The thickness of the sacrificial layer is less than 100 angstroms.

26. The method for forming a semiconductor structure as described in claim 1, characterized in that, The filter layer includes a red filter layer, a blue filter layer, or a green filter layer.

27. A semiconductor structure, characterized in that, include: A driving substrate, the driving substrate including a device structure; A dielectric structure bonded to the driving substrate, the dielectric structure comprising opposing first and second surfaces; A conductive structure located within a dielectric structure, the conductive structure including a first electrode layer and a connection layer located on the first electrode layer, the first surface exposing the surface of the connection layer, the first surface facing the surface of the driving substrate, and the connection layer being electrically connected to the device structure; The liquid crystal layer located on the second surface; A second substrate bonded to the driving substrate, the surface of the second substrate including a filter layer and a second electrode layer located on the surface of the filter layer, the second electrode layer facing the second surface, and the liquid crystal layer located between the first electrode layer and the second surface.

28. The semiconductor structure as claimed in claim 27, characterized in that, The dielectric structure includes a first dielectric structure and a second dielectric structure, the second dielectric structure exposing the surface of the connection layer, the first electrode layer being located within the first dielectric structure, the connection layer being located within the second dielectric structure, the surface of the second dielectric structure being the first surface, and the surface of the first dielectric structure away from the second dielectric structure being the second surface.

29. The semiconductor structure as described in claim 28, characterized in that, The first dielectric structure includes: a stop layer and a first dielectric layer located on the stop layer, the first electrode layer being located within the first dielectric layer, and the first electrode layer being in contact with the stop layer.

30. The semiconductor structure as claimed in claim 29, characterized in that, The material of the stop layer is different from the material of the first dielectric layer.

31. The semiconductor structure as described in claim 29, characterized in that, The density of the material in the stop layer is greater than that of the material in the first dielectric layer.

32. The semiconductor structure as described in claim 27, characterized in that, The first electrode layer includes a third surface and a fourth surface opposite to each other, the third surface being away from the connecting layer and the fourth surface being in contact with the connecting layer.

33. The semiconductor structure as described in claim 27, characterized in that, The material of the first electrode layer is the same as that of the connecting layer.

34. The semiconductor structure as claimed in claim 27, characterized in that, The projection range of the connecting layer on the first substrate is located within the projection range of the first electrode layer on the first substrate.

35. The semiconductor structure as claimed in claim 27, characterized in that, The exposed second surface includes a display area; it also includes a frame adhesive layer surrounding the display area, with the liquid crystal layer located on the surface of the display area surrounded by the frame adhesive layer.

36. The semiconductor structure as described in claim 27, characterized in that, The driving substrate includes: a substrate; a device layer on the substrate, the device layer including an isolation structure and a device structure within the isolation structure, the device structure including a transistor, diode, triode, capacitor, inductor, or conductive structure; a dielectric structure on the device layer; and an electrical connection structure within the dielectric structure, the electrical connection structure being electrically connected to the device structure.

37. The semiconductor structure as claimed in claim 27, characterized in that, The material of the electrical connection structure is the same as the material of the conductive structure.

38. The semiconductor structure as claimed in claim 27, characterized in that, The filter layer includes a red filter layer, a blue filter layer, or a green filter layer.

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