Apparatus for producing silicon oxide

Abstract

A silicon oxide preparation apparatus includes a heating furnace, a heating device, a crucible, a collecting device, and a vacuum device. The heating furnace has a heating zone inside; the heating device and the crucible are disposed in the heating zone, and the crucible has an upper opening; the collecting device is disposed between the heating zone and the inner wall of the heating furnace, and includes a collecting cylinder, a fixing plate, and multiple adsorbents, wherein: the collecting cylinder includes a top plate, a bottom plate, and a cylinder body; the top plate has an outlet, the bottom plate has an inlet, the inlet is connected to the upper opening of the crucible, and the cylinder body has an inner wall surface; the fixing plate is disposed in the cylinder body, and an airflow channel is formed between the outer periphery of the fixing plate and the inner wall surface of the cylinder body; the multiple adsorbents are disposed on the fixing plate; the vacuum device is connected to the outlet of the top plate of the collecting device.

Description

Technical Field

[0001] This invention relates to a silicon oxide preparation technique; in particular, it relates to a preparation device that can increase the yield of silicon oxide. Background Technology

[0002] The internal reaction of a lithium-ion secondary battery mainly involves the reciprocating movement of lithium ions between the positive and negative electrodes to create a potential difference between them. Most lithium-ion secondary batteries use graphite as the negative electrode material, but lithium-ion secondary batteries using this type of negative electrode material have very low energy density. Therefore, in order to improve energy density, the industry has developed a variety of new negative electrode materials. Among them, using silicon oxide as the negative electrode material for lithium-ion secondary batteries can achieve high voltage and high energy density lithium-ion secondary batteries.

[0003] Existing silicon oxide preparation apparatuses for lithium secondary batteries typically include a raw material container, a heating device, a precipitation chamber, and a vacuum device. By placing silicon oxide powder in the raw material container and heating it to vaporize, the silicon oxide gas is then extracted by the vacuum device and allowed to flow through the precipitation chamber to precipitate solid silicon oxide on the inner wall of the precipitation chamber. However, the yield of silicon oxide prepared using existing silicon oxide preparation apparatuses is poor. Therefore, the existing silicon oxide preparation apparatuses are still not perfect in terms of structural design and there are still areas for improvement. Summary of the Invention

[0004] In view of this, the purpose of the present invention is to provide a silicon oxide preparation apparatus that can increase the yield of silicon oxide.

[0005] To achieve the above objectives, the present invention provides a silicon oxide preparation apparatus, comprising a heating furnace, a heating device, a crucible, a collecting device, and a vacuum device. The heating furnace has an internal heating zone formed by a heat-insulating material; the heating device is disposed within the heating zone; the crucible is disposed within the heating zone and is used to contain a solid raw material, the solid raw material including silicon dioxide and silicon, the crucible having an upper opening; the collecting device is disposed between the heating zone and the inner wall of the heating furnace, the collecting device comprising a collecting cylinder, a fixing plate, and multiple adsorption elements, wherein: the collecting cylinder includes a top plate, a bottom plate, and a cylinder body, the top plate and the bottom plate respectively having... The device is positioned at a top and a bottom of the cylinder; the top plate has an air outlet, the bottom plate has an air inlet, the air inlet is connected to the upper opening of the crucible, and the cylinder has an inner wall surface; a fixing plate is disposed in the cylinder, the fixing plate has an outer periphery, the outer periphery is spaced from the inner wall surface of the cylinder to form an airflow channel surrounding the outer periphery; a plurality of adsorption elements are disposed on the fixing plate and extend toward the bottom plate of the collecting cylinder; the suction device is connected to the air outlet of the top plate of the collecting device.

[0006] The advantage of this invention is that the airflow channel is formed around the periphery of the fixed plate, which allows the gaseous silicon oxide entering the cylinder to pass evenly through the multiple adsorption elements, effectively increasing the yield of silicon oxide. Attached Figure Description

[0007] Figure 1 This is a schematic diagram of a silicon oxide preparation apparatus according to a first preferred embodiment of the present invention.

[0008] Figure 2 This is a schematic diagram of the collection device according to the first preferred embodiment of the present invention.

[0009] Figure 3 This is a schematic diagram of a collection device according to a first preferred embodiment of the present invention, showing the lifting collection device.

[0010] Figure 4 This is a perspective view of the collection tube according to the first preferred embodiment of the present invention.

[0011] Figure 5 This is an exploded perspective view of the collection tube according to the first preferred embodiment of the present invention.

[0012] Figure 6 This is a bottom view of the collection tube according to the first preferred embodiment of the present invention.

[0013] Figure 7 This is a bottom view of the inside of the collection tube according to the first preferred embodiment of the present invention, revealing the perforation arrangement of the fixing plate.

[0014] Figure 8 This is a bottom view of the inside of the collection cylinder according to the first preferred embodiment of the present invention, revealing the arrangement of the adsorption elements.

[0015] Figure 9 for Figure 4 Sectional view in direction 9-9.

[0016] Figure 10 This is a schematic diagram of the collection device according to a first preferred embodiment of the present invention, showing the suspended top plate.

[0017] Figure 11 This is a schematic diagram of a silicon oxide preparation apparatus according to a first preferred embodiment of the present invention, showing the collection of silicon oxide.

[0018] Figure 12 This is a schematic diagram of a silicon oxide preparation apparatus according to a first preferred embodiment of the present invention, showing the cooling of solid silicon oxide.

[0019] Figure 13This is a simulation diagram of the temperature distribution inside the silicon oxide collection cylinder of the first preferred embodiment of the present invention, revealing the temperature distribution of the first inner diameter D1 of the cylinder and the second inner diameter D2 of the air inlet at different ratios.

[0020] Figure 14 This is a bottom view of the inside of the collection tube according to a second preferred embodiment of the present invention, revealing the arrangement of the adsorption elements.

[0021] Figure 15 This is a bottom view of the inside of the collection cylinder according to a third preferred embodiment of the present invention, revealing the arrangement of the adsorption elements.

[0022] Explanation of reference numerals in the attached figures

[0023] 100: Preparation equipment

[0024] 10: Heating Furnace

[0025] 12: Thermal insulation materials

[0026] 12a: Top through hole

[0027] 124: Heating Zone

[0028] 14: Heating device

[0029] 142: Heater

[0030] 16: Crucible

[0031] 162: Open at the top

[0032] 164: Vent

[0033] 18, 18a, 18b: Collection device

[0034] 20: Collection tube

[0035] 22: Top Slab

[0036] 222: Air outlet

[0037] 224: Gap

[0038] 24: Base plate

[0039] 242: Air Inlet

[0040] 26: Body

[0041] 26a: Inner wall surface

[0042] 262: Airflow Channel

[0043] 264: High-temperature area

[0044] 28: Hanging column

[0045] 282: Hanging hole

[0046] 30: Rings

[0047] 32: Grip

[0048] 34: Fixing plate

[0049] 34a: peripheral edge

[0050] 342: Upper surface

[0051] 344: Lower surface

[0052] 346: Perforation

[0053] 346a: Central perforation

[0054] 346b: Peripheral perforation

[0055] 36: Connecting column

[0056] 38: Nuts

[0057] 40: Adsorption component

[0058] 40a: Central adsorption component

[0059] 40b: Peripheral adsorption component

[0060] 402: Adsorption section

[0061] 404: Connector

[0062] 42: Nut

[0063] 44: Air extraction device

[0064] 46: Exhaust pipe

[0065] 462: Supervisor Road

[0066] 464: First branch pipeline

[0067] 466: Second branch pipeline

[0068] 48: First switching valve

[0069] 50: Second switching valve

[0070] 52: Base

[0071] 522: Air intake channel

[0072] 522a: Entry point

[0073] 522b: Export end

[0074] 54: base body

[0075] 542: Receiving hole

[0076] 56: Conical ring

[0077] 58: Connecting parts

[0078] 60: Set of pipes

[0079] 602: Inner Barrier

[0080] 62: Extension tube

[0081] 622: Outer Barrier

[0082] 64: Cooling air source

[0083] 66: One-way exhaust valve

[0084] 68: Hanging ornaments

[0085] 70: Hanging components

[0086] 200: Solid raw materials

[0087] 300: Solid silicon oxide

[0088] 18a: Collection device

[0089] 18b: Collection device

[0090] A1: First axis

[0091] A2: Second axis

[0092] D0: Inner diameter

[0093] D1: First inner diameter

[0094] D2: Second inner diameter

[0095] D3: Distance

[0096] D4: Spacing

[0097] D5: Distance

[0098] D6: Spacing

[0099] D7: Distance

[0100] D8: Distance

[0101] L1: First Length

[0102] L2: Second Length

[0103] Z1, Z2, Z3: Effective adsorption regions Detailed Implementation

[0104] To more clearly illustrate the present invention, preferred embodiments are described in detail below with reference to the accompanying drawings. Please refer to... Figures 1 to 12 As shown, a silicon oxide preparation apparatus 100 according to a first preferred embodiment of the present invention includes a heating furnace 10, a heating device 14, a crucible 16, a collecting device 18 and a vacuum device 44.

[0105] Please cooperate. Figure 1 and Figure 2 The heating furnace 10 has a heating zone 124 formed by a heat-insulating material 12. The heating device 14 and the crucible 16 are disposed within the heating zone 124. The heat-insulating material 12 has an upper through-hole 12a that communicates with the heating zone 124. The heating device 14 includes a plurality of heaters 142, which surround the outer wall of the crucible 16. The crucible 16 has an upper opening 162 and a vent 164. The interior of the crucible 16 is used to contain a solid raw material 200, which includes silicon dioxide and silicon. The heating device 14 heats the crucible 16 to form a gaseous silicon oxide from the solid raw material 200. In this embodiment, the heaters 142 of the heating device 14 maintain the internal temperature of the heating zone 124 between 1300 and 1350 degrees Celsius. The collecting device 18 is disposed between the heating zone 124 and the inner furnace wall of the heating furnace 10 and is located on top of the heat insulation material 12.

[0106] Please cooperate. Figures 1 to 10 As shown, the collection device 18 includes a collection cylinder 20, a fixing plate 34, and multiple adsorption elements 40. Please refer to... Figure 4 and Figure 5 The collecting cylinder 20 includes a top plate 22, a bottom plate 24, and a cylinder body 26. The top plate 22 is disposed on top of the cylinder body 26. In this embodiment, the top plate 22 is a circular plate and is detachably disposed on top of the cylinder body 26. More specifically, the top plate 22 directly covers the top of the cylinder body 26. The top plate 22 has an air outlet 222, and the peripheral portion of the top plate has multiple notches 224. In this embodiment, the air outlet 222 is located in the center of the top plate 22 and is a circular hole. Figure 1 As shown, the air outlet 222 is connected to an exhaust pipe 46. The exhaust pipe 46 includes a main pipe 462, a first branch pipe 464, and a second branch pipe 466 that are connected to each other. The main pipe 462 is detachably connected to the air outlet 222. A first switching valve 48 and a second switching valve 50 are respectively provided on the first branch pipe 464 and the second branch pipe 466. The first switching valve 48 is used to open or close the first branch pipe 464, and the second switching valve 50 is used to open or close the second branch pipe 466.

[0107] The base plate 24 is disposed at the bottom of the cylinder body 26, and the periphery of the base plate 24 is connected to the bottom of the cylinder body 26. The base plate 24 is a circular plate and has an air inlet 242. Figure 1 and Figure 2 As shown, the air inlet 242 connects to the upper opening 162 of the crucible 16. In this embodiment, the air inlet 242 is located in the center of the bottom plate 24, and the air inlet 242 is a circular hole. Please refer to... Figure 9 The cylinder body 26 has a circular inner wall surface 26a, the inner diameter of which is a first inner diameter D1, and the inner diameter of the air inlet 242 is a second inner diameter D2. Preferably, the first inner diameter D1 can be 2 to 4 times the second inner diameter D2, more preferably 3 times. In addition, in this embodiment, the second inner diameter D2 is, for example, 2 to 3 times the inner diameter D0 of the air outlet 222, but is not limited thereto.

[0108] The fixing plate 34 is disposed in the cylindrical body 26. The fixing plate 34 is a circular plate with an outer periphery 34a. The outer periphery 34a is spaced apart from the inner wall surface 26a of the cylindrical body 26, forming an airflow channel 262 surrounding the outer periphery 34a. In this embodiment, please refer to... Figure 9 There is a distance D3 between the outer periphery 34a of the fixing plate 34 and the inner wall surface 26a of the cylinder 26. The distance D3 is between 5 and 10 cm. Therefore, the airflow channel 262 has a sufficient width to allow airflow to pass through smoothly.

[0109] The aforementioned top plate 22, bottom plate 24, and fixing plate 34 are not limited to circular plates; they can also be rectangular plates, while the inner wall surface 26a of the cylinder body 26 is the corresponding rectangular inner wall surface.

[0110] Please cooperate. Figure 4 and Figure 5 The fixing plate 34 is connected to the top plate 22 via multiple connecting posts 36. One end of each connecting post 36 is connected to the fixing plate 34, and the other end is threaded, passes through the top plate 22, and is engaged with a nut 38. Through the multiple connecting posts 36, the fixing plate 34 can be spaced from the top plate 22 by a distance D4. Figure 9 (Refer to) to allow airflow, the spacing D4 can be, for example, 3.5–5.5 cm, and in this embodiment, it is 4 cm. The fixing plate 34 has a plurality of through holes 346, which penetrate an upper surface 342 and a lower surface 344 of the fixing plate 34. Please refer to... Figure 7In this embodiment, the plurality of perforations 346 are arranged in a matrix, that is, arranged in multiple rows and multiple columns, and the distance D5 between the centers of two adjacent perforations 346 is 6 to 12 cm. The number of the plurality of perforations 346 is 69 for example, but is not limited thereto. The plurality of holes 346 includes a plurality of central perforations 346a and a plurality of peripheral perforations 346b. The perforations 346 located within the projection range of the air inlet 242 and the perforations 346 near the air inlet 242 are defined as central perforations 346a (perforations 346 within the imaginary rectangular lines). The plurality of peripheral perforations 346b surround the plurality of central perforations 346a and are located between the plurality of central perforations 346a and the outer periphery 34a.

[0111] like Figure 2 , Figure 5 and Figure 9 As shown, the plurality of adsorption elements 40 are disposed on the fixing plate 34 and extend toward the bottom plate 24 of the collection cylinder 20. Each adsorption element 40 includes an adsorption section 402 and a connecting section 404. Each adsorption section 402 is located below the lower surface 344 of the fixing plate 34 and is used to adsorb silicon oxide. In this embodiment, the surface material of each adsorption element 40 contains carbon, such as carbon fiber, but is not limited thereto. The surface of the adsorption element 40 can also be a single metal or alloy, such as stainless steel. One end of each connecting section 404 passes through a corresponding perforation 346 and protrudes from the upper surface 342 of the fixing plate 34. Each connecting section 404 has threads, and is respectively connected to the threads on the ends of the plurality of connecting sections 404 by a plurality of couplings, such as nuts 42. Thus, the plurality of adsorption elements 40 are fixed to the fixing plate 34, and the plurality of adsorption elements 40 are arranged in a matrix.

[0112] More specifically, such as Figure 8 As shown, the plurality of adsorption elements 40 includes a plurality of central adsorption elements 40a and a plurality of peripheral adsorption elements 40b. The plurality of central adsorption elements 40a correspond to the air inlet 242 of the bottom plate 24 of the collection cylinder 20. The plurality of peripheral adsorption elements 40b surround the plurality of central adsorption elements 40a and are relatively close to the outer periphery 34a of the fixing plate 34 and the inner wall surface 26a of the cylinder body 26. The adsorption element 40 disposed in the central perforation 346a of the fixing plate 34 is defined as the central adsorption element 40a (the adsorption element 40 within the rectangular imaginary line). The plurality of central adsorption elements 40a are located within the projection range of the air inlet 242 and are close to the air inlet 242. The projection range of the air inlet 242 contains a plurality of central adsorption elements 40a. The plurality of peripheral adsorption elements 40b are located between the plurality of central adsorption elements 40a and the outer periphery 34a.

[0113] Continued reference Figure 9In the plurality of adsorbents 40, the distance D6 between the outer peripheral surfaces of two adjacent adsorbent segments 402 is 1 to 4 cm. The length of the adsorbent segment 402 of each central adsorbent 40a is less than the length of the adsorbent segment 402 of each peripheral adsorbent 40b. The length difference between the length of the adsorbent segment 402 of each peripheral adsorbent 40b and the length of the adsorbent segment 402 of each central adsorbent 40a is between 2 and 27.5 cm. The distance between the top plate 22 and the bottom plate 24 of the collecting cylinder 20 is a first length L1, and the length of the adsorbent segment 402 of each peripheral adsorbent 40b is a second length L2, which is 0.6 to 0.75 times the first length L1. In this embodiment, the first length L1 is 44 cm, the second length L2 is 29 cm, and the distance D7 between the bottom end of each peripheral adsorbent 40b and the bottom plate 24 is 11 cm. One of the plurality of central adsorption elements 40a is located at the center (i.e., the center) of the fixing plate 34, and the length of the adsorption segment 402 of the plurality of central adsorption elements 40a gradually decreases from the periphery of the fixing plate 34 towards the center. In this embodiment, the adsorption segment 402 of the central adsorption element 40a located at the center of the fixing plate 34 is the shortest, with a length of 1.5 cm, and the distance D8 between the bottom end of the adsorption segment 402 and the bottom plate 24 is 38.5 cm. The length of the adsorption segment of the central adsorption element 40a located at the center of the fixing plate 34 can also be 1.5 to 20 cm, preferably, its length is less than or equal to half of the adsorption segment 402 of the peripheral adsorption elements 40b.

[0114] Please refer to Figure 9 As shown, the purpose of the relatively short length of the plurality of central adsorption elements 40a is that the area around the air inlet 242 of the base plate 24 is a high-temperature region 264 (a region with a temperature greater than approximately 860K), while the temperature is lower away from the air inlet 242. If silicon oxide is adsorbed in the high-temperature region 264, the resulting silicon oxide, after X-ray diffraction analysis, will contain monocrystalline silicon. Therefore, the inventors specifically designed the bottom ends of the plurality of central adsorption elements 40a to be far away from the high-temperature region 264 around the air inlet 242, thus obtaining silicon oxide of superior quality. In addition, the design of the first inner diameter D1 of the cylinder body 26 being 2 to 4 times the second inner diameter D2 of the air inlet 242 allows the peripheral adsorption elements 40b to be far away from the high-temperature region 264, ensuring that the temperature of the peripheral adsorption elements 40b is suitable for adsorbing silicon oxide of superior quality. In this embodiment, the silicon oxide of preferred quality mentioned above is SiOx, x = 0.75 to 1, and is amorphous. The temperature of the adsorbent 40 suitable for adsorbing this silicon oxide is about 700 to 860 K.

[0115] Please cooperate. Figure 13 and Figure 9The region with a temperature of approximately 700–860 K is defined as three effective adsorption regions Z1, Z2, and Z3, such as… Figure 13 The area enclosed by the dashed box, i.e., the silicon oxide produced in each of the effective adsorption regions Z1, Z2, Z3, is SiOx, x = 0.75~1, and is amorphous. When D1 / D2 = 2, the high-temperature region 264 (a region with a temperature approximately greater than 860K) around the inlet 242 is relatively large. The silicon oxide produced in this high-temperature region 264 is prone to containing monocrystalline silicon. Therefore, the high-temperature region 264 will occupy part of the effective adsorption region Z1, making the effective adsorption region Z1 smaller. When D1 / D2 = 3, the high-temperature region 264 is moderate, and the effective adsorption region Z2 is the largest. When D1 / D2 = 4, the high-temperature region 264 is the smallest. Although the bottom of the effective adsorption region Z3 can extend downwards, a cold region (a region with a temperature less than 700K) is formed in the outer area of ​​the dashed box. The silicon oxide produced in the cold region is SiOx, x = 1~1.2, and is amorphous. Therefore, the cold region also occupies part of the effective adsorption region Z3. Figure 13 In the diagram, the area ratio of the three effective adsorption regions Z1, Z2, and Z3, with D1 / D2 ratios of 2, 3, and 4, is approximately 0.91:1:0.87. Therefore, when the desired silicon oxide to be produced is SiOx, where x = 0.75–1, and is amorphous, the D1 / D2 ratio can be set to 3. This results in a larger volume of produced silicon oxide, effectively increasing the yield.

[0116] In other embodiments, a suitable SiOx composition and crystal morphology can be selected as required to define a high-quality silicon oxide. In this case, D1 / D2 can be other ratios, not limited to 2 to 4 as mentioned above.

[0117] like Figure 1 , Figure 2 and Figure 10 As shown, the preparation device 100 in this embodiment further includes a base 52, a connecting pipe 60, and an extension pipe 62. The base 52 is disposed below the bottom plate 24 of the collecting cylinder 20 and is connected to the bottom plate 24 by a plurality of couplings 58. The base 52 is used to place on top of the heat insulation material 12. The base 52 has an air inlet channel 522, which has an inlet end 522a and an outlet end 522b. The inlet end 522a communicates with the upper opening 162 of the crucible 16, and the outlet end 522b corresponds to the air inlet 242 of the bottom plate 24. The width of the air inlet channel 522 gradually increases from the inlet end 522a to the outlet end 522b. More specifically, as Figure 10As shown, the base 52 includes a body 54 and a conical ring 56. The body 54 is placed on top of the heat insulation material 12 and has a receiving hole 542. The conical ring 56 is detachably disposed in the receiving hole 542 and has the air inlet channel 522. The conical ring 56 is exemplified by a metal conical ring, such as stainless steel. The detachable design of the conical ring 56 facilitates the cleaning of accumulated silicon oxide.

[0118] like Figures 1 to 3 As shown, the sleeve 60 is attached to the bottom of the base 52 and passes through the upper through hole 12a of the heat insulation material 12. The sleeve 60 communicates with the air inlet channel 522. The extension tube 62 is inserted into the sleeve 60 in a manner that allows it to move axially relative to the sleeve 60, and a portion of the extension tube 62 is located in the heating zone. The bottom end of the extension tube 62 is detachably attached around the upper opening 162 of the crucible 16 and communicates with the upper opening 162 of the crucible and the interior of the crucible 16.

[0119] One end (bottom end) of the sleeve 60 has an inner baffle 602, and the top end of the extension tube 62 is an insertion end that can be movably inserted into the sleeve. The insertion end has an outer baffle 622. When the outer baffle 622 abuts against the inner baffle 602, it prevents the extension tube 62 from separating from the sleeve 60.

[0120] like Figure 1 As shown, the suction device 44 is connected to the air outlet of the top plate 22 of the collection cylinder 20. In this embodiment, the suction device 44 is connected to the first branch pipe 464 of the exhaust pipe 46, and the first branch pipe 464 is connected to the main pipe 462 to the air outlet 222 of the top plate 22 of the collection cylinder 20.

[0121] like Figure 1 As shown, the preparation apparatus 100 in this embodiment further includes a cooling gas source and a one-way exhaust valve. The cooling gas source 64 is connected to the second branch pipe 466 of the exhaust pipe 46, and is connected to the outlet 222 of the top plate 22 of the collecting cylinder 20 through the second branch pipe 466 and the main pipe 462. Thus, the cooling gas source 64 can be connected to the outlet 222 of the top plate 22 of the collecting device 18. The cooling gas source 64 is used to inject a cooling gas into the cylinder body 26 of the collecting cylinder 20 of the collecting device 18, and the cooling gas flows to the crucible 16. The one-way exhaust valve 66 is connected to the interior of the crucible 16 through the vent 164 of the crucible 16, and the cooling gas flowing into the crucible 16 is discharged through the one-way exhaust valve 66. The cooling gas can be an inert gas, such as argon or nitrogen.

[0122] like Figures 3 to 5 As shown, in this embodiment, the collection cylinder 20 further includes a plurality of hanging columns 28, which are attached to the top of the cylinder body 26 and protrude from the plurality of notches 224 of the top plate 22. Each hanging column 28 has a hanging hole 282, which can be hooked by a hanging component 68 (e.g., a hook) to pull the cylinder body 26 together with the top plate 22 and the plurality of suction components 40 upward.

[0123] like Figures 4 to 5 and Figure 10 As shown, the top of the top plate 22 is provided with at least one hanging ring 30 and multiple handles 32. In this embodiment, there are multiple hanging rings 30. The multiple hanging rings 30 are attached to the top of the top plate 22. Each hanging ring 30 can also be hooked by a hanging member 70 to pull the top plate 22 together with the multiple suction members 40 upward and detach it from the cylinder body 26. The two handles 32 are for the user to grip.

[0124] Please refer to Figure 11 With the above-described structure, when collecting silicon oxide using the preparation equipment 100, the heating device 14 heats the crucible 16, causing the solid raw material 200 to vaporize and form gaseous silicon oxide. Then, the first switching valve 48 is opened and the second switching valve 50 is closed, and the suction device 44 performs suction. Guided by the suction device 44, the gaseous silicon oxide enters the cylinder 26 through the extension tube 62, the air inlet channel 522 of the base 52, and the air inlet 242 of the cylinder 26. The airflow channel 262 around the outer periphery 34a of the fixed plate 34 has sufficient width to allow the gaseous silicon oxide airflow to pass smoothly between the outer periphery 34a of the fixed plate 34 and the inner wall surface 26a. As a result, the airflow inside the cylinder 26 is uniform, and the multiple central adsorption elements 40a and the multiple peripheral adsorption elements 40b surrounded by the airflow channel 262 can all come into contact with the gaseous silicon oxide. The multiple central adsorption elements 40a and the peripheral adsorption elements 40b on each radial direction of the fixed plate 34 can uniformly adsorb silicon oxide. Therefore, the overall amount of silicon oxide adsorbed by the multiple adsorption elements 40 can be effectively increased, and silicon oxide is avoided from being concentrated in the multiple central adsorption elements 40a and the peripheral adsorption elements 40b on a specific side, thus effectively increasing the yield of silicon oxide.

[0125] More notably, the design of the gradually increasing width of the air inlet channel 522 of the base 52 allows the airflow of gaseous silicon oxide to expand and enter the cylinder body 26 of the collection cylinder 20. As a result, the airflow of gaseous silicon oxide can be dispersed to flow to the multiple peripheral adsorption elements 40b, avoiding the airflow of gaseous silicon oxide from concentrating to flow to the multiple central adsorption elements 40a.

[0126] Please refer to Figure 12 After the process is completed, the heating device 14 is turned off, the first switching valve 48 is closed, and the second switching valve 50 is opened. Cooling gas from the cooling gas source 64 is injected into the cylinder 26 of the collecting cylinder 20 from the second branch pipe 466 and the main pipe 462. Since the outlet 222 faces the fixed plate 34, the cooling gas injected into the cylinder 26 is evenly dispersed by the fixed plate 34 into the airflow channel 262, cooling the solid silicon oxide 300 adsorbed on the multiple adsorption elements 40. Then, the cooling gas flows into the crucible 16 and is discharged through the one-way exhaust valve 66 to prevent excessive internal pressure in the crucible 16.

[0127] After cooling, the heating furnace 10 can be opened, and the exhaust pipe 46 can be disconnected from the exhaust port 222 of the collecting cylinder 20. For example... Figure 3 As shown, the collecting device 18 is lifted by inserting a hanging member 68 through the hanging holes 282 of the plurality of hanging columns 28. The extension tube 62 moves downward under the influence of gravity, and the outer baffle 622 of the insertion end of the extension tube abuts against the inner baffle 602 of the sleeve tube 60. The bottom end of the extension tube 62 leaves the crucible 16. Thus, the collecting device 18 can be lifted away from the heating furnace.

[0128] Then, as Figure 10 As shown, the hanging member 70 is hooked onto the plurality of hanging rings 30 on the top plate 22, and the top plate 22, together with the plurality of adsorption members 40 and the solid silicon oxide 300, is pulled upwards away from the cylinder body 26. This allows the user to easily remove the solid silicon oxide 300 from the plurality of adsorption members 40 from the outside.

[0129] Figure 14 The collection device 18a, a second preferred embodiment of the present invention, has a structure substantially the same as that of the first embodiment, except that the perforations 346 on the fixing plate 34 are optionally provided with adsorption elements 40. The plurality of adsorption elements 40 are arranged in an alternating pattern. The plurality of adsorption elements 40 can also be distinguished into a central adsorption element 40a (the adsorption element within the imaginary rectangular line) and peripheral adsorption elements 40b.

[0130] Figure 15The collecting device 18b, a third preferred embodiment of the present invention, has a structure substantially the same as that of the first embodiment, except that the plurality of adsorption elements 40 are arranged along a first axis A1 and a second axis A2, the first axis A1 and the second axis A2 being perpendicular and extending radially along the fixing plate 34 and passing through the center of the fixing plate 34, respectively. The plurality of adsorption elements 40 can also be distinguished as a central adsorption element 40a (the adsorption element 40 within the imaginary rectangular line) and peripheral adsorption elements 40b.

[0131] In practice, in the second and third embodiments, the perforation 346 on the fixing plate 34 where the adsorption element 40 is not provided can also be omitted.

[0132] As described above, the silicon oxide preparation equipment 100 of the present invention forms an airflow channel 262 around the periphery of the fixing plate 34, which allows the gaseous silicon oxide entering the cylinder 26 to pass evenly through the plurality of adsorption elements 40, effectively increasing the yield of silicon oxide.

[0133] The above description is only a preferred embodiment of the present invention. Any equivalent changes made by applying the present invention specification and the claims should be included within the patent scope of the present invention.

Claims

1. An apparatus for preparing silicon oxide, comprising: A heating furnace having an internal heating zone enclosed by an insulating material; A heating device is installed in the heating zone; A crucible, disposed in the heating zone, is used to contain a solid raw material, the solid raw material including silicon dioxide and silicon, the crucible having an upper opening; A collection device is disposed between the heating zone and the inner wall of the heating furnace. The collection device includes a collection cylinder, a fixing plate, and multiple adsorption elements, wherein: The collecting cylinder includes a top plate, a bottom plate, and a cylinder body. The top plate and the bottom plate are respectively disposed at a top and a bottom of the cylinder body. The top plate has an air outlet, the bottom plate has an air inlet, the air inlet is connected to the upper opening of the crucible, and the cylinder body has an inner wall surface. The fixing plate is disposed in the cylinder body, and the fixing plate has an outer periphery. The outer periphery is spaced from the inner wall surface of the cylinder body to form an airflow channel surrounding the outer periphery. The plurality of adsorption elements are disposed on the fixing plate and extend toward the bottom plate of the collection cylinder; An air extraction device is connected to the air outlet of the top plate of the collection device.

2. The apparatus for preparing silicon oxide as described in claim 1, wherein, The top plate is detachably mounted on the top of the cylinder; the fixing plate is connected to the top plate by multiple connecting columns.

3. The apparatus for preparing silicon oxide as described in claim 2, wherein, The fixing plate has multiple perforations that penetrate an upper surface and a lower surface of the fixing plate; each adsorption member includes an adsorption section and a connecting section, each adsorption section is located below the lower surface, and one end of the connecting section of each adsorption member passes through a corresponding perforation and protrudes from the upper surface; multiple coupling members are respectively coupled to the ends of the multiple connecting sections.

4. The apparatus for preparing silicon oxide as described in claim 3, wherein, The distance between the centers of two adjacent perforations is 6 to 12 centimeters.

5. The apparatus for preparing silicon oxide as described in claim 3, wherein, The plurality of adsorption elements includes a plurality of central adsorption elements and a plurality of peripheral adsorption elements. The plurality of central adsorption elements correspond to the air inlet of the bottom plate of the collection cylinder. The plurality of peripheral adsorption elements surround the plurality of central adsorption elements and are relatively close to the inner wall surface of the cylinder. The length of the adsorption section of each central adsorption element is less than the length of the adsorption section of each peripheral adsorption element. The length difference between the length of the adsorption section of each peripheral adsorption element and the length of the adsorption section of each central adsorption element is between 2 and 27.5 cm.

6. The apparatus for preparing silicon oxide as described in claim 5, wherein, The distance between the top plate and the bottom plate of the collection cylinder is a first length, and the length of the adsorption section of each of the peripheral adsorption elements is a second length, which is 0.65 to 0.75 times the first length.

7. The apparatus for preparing silicon oxide as described in claim 1, wherein, The arrangement of the plurality of adsorption elements is one of the following A to C, wherein: A. The plurality of adsorption elements are arranged in a matrix; B. The plurality of adsorption elements are arranged in an alternating pattern; C. The plurality of adsorption elements are arranged along a first axis and a second axis, the first axis being perpendicular to the second axis and passing through the center of the fixing plate.

8. The apparatus for preparing silicon oxide as described in claim 1, wherein, The collection cylinder includes multiple hanging columns attached to the top of the cylinder body; a top plate covers the top of the cylinder body, wherein the top plate has multiple notches, and the multiple hanging columns protrude from the multiple notches respectively.

9. The apparatus for preparing silicon oxide as described in claim 8, wherein, It includes at least one lifting ring, which is attached to the top plate.

10. The apparatus for preparing silicon oxide as described in claim 1, wherein, It includes a base disposed below the bottom plate of the collecting cylinder. The base has an air inlet channel with an inlet end and an outlet end. The inlet end is connected to the upper opening of the crucible, and the outlet end corresponds to the air inlet of the bottom plate. The width of the air inlet channel gradually increases from the inlet end to the outlet end.

11. The apparatus for preparing silicon oxide as described in claim 10, wherein, The base includes a body and a conical ring. The body has a receiving hole, and the conical ring is detachably disposed in the receiving hole. The conical ring has the air inlet channel.

12. The apparatus for preparing silicon oxide as described in claim 11, wherein, It includes a connecting tube and an extension tube. The connecting tube is attached to the bottom of the base and communicates with the air inlet channel. The extension tube is inserted into the connecting tube in a manner that allows it to move axially relative to the connecting tube. The extension tube communicates with the upper opening of the crucible.

13. The apparatus for preparing silicon oxide as described in claim 12, wherein, One end of the sleeve has an inner baffle, and the extension tube has an insertion end that inserts into the sleeve. The insertion end has an outer baffle. When the outer baffle abuts against the inner baffle, the extension tube is prevented from separating from the sleeve.

14. The apparatus for preparing silicon oxide as described in claim 1, wherein, There is a distance between the outer periphery of the fixing plate and the inner wall surface of the cylinder, the distance being between 5 and 10 centimeters.

15. The apparatus for preparing silicon oxide as described in claim 1, wherein, The cylinder body has a first inner diameter, and the air inlet has a second inner diameter, wherein the first inner diameter is 2 to 4 times the second inner diameter.

16. The apparatus for preparing silicon oxide as described in claim 1, wherein, It includes a cooling gas source connected to the air outlet of the top plate of the collecting device. The cooling gas source injects a cooling gas into the body of the collecting cylinder of the collecting device, and the cooling gas flows to the crucible.

17. The apparatus for preparing silicon oxide as described in claim 16, wherein, It includes a one-way exhaust valve connected to the crucible; the cooling gas flowing into the crucible is discharged through the one-way exhaust valve.

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