A method for manufacturing a high-power ceramic capacitor and a ceramic capacitor

Abstract

This application discloses a method for fabricating a high-power ceramic capacitor and the ceramic capacitor itself. The method includes: constructing discretely distributed interface microstructure units on at least one surface of a pre-fabricated ceramic substrate layer, wherein each interface microstructure unit is a local structure with a height difference and / or composition difference relative to the surface of the ceramic substrate layer, used to define spaced-apart reaction-triggered regions and non-triggered regions; activating the surface of a pre-fabricated metal electrode layer to give it interfacial activity that preferentially reacts with the interface microstructure units; stacking the metal electrode layer and the ceramic substrate layer, with the interface microstructure units located at the contact interface, forming a stacked structure; heat-treating the stacked structure to preferentially induce interfacial reactions in the reaction-triggered regions, forming reaction bonding regions; and post-processing the heat-treated stacked structure to obtain the ceramic capacitor.

Description

Technical Field

[0001] This application relates to the field of capacitor manufacturing technology, and in particular to a method for preparing a high-power ceramic capacitor and the ceramic capacitor itself. Background Technology

[0002] As electronic devices develop towards higher power and higher integration, the demand for ceramic capacitors in power management, power conversion, and high-frequency circuits is constantly increasing. Especially in high-current operating environments, higher requirements are placed on the conductivity, interface stability, and long-term reliability of ceramic capacitors.

[0003] In existing technologies, ceramic capacitors typically employ a structure formed by stacking a ceramic dielectric layer and metal electrodes, with the two layers bonded together through sintering or co-firing processes. In this type of structure, the interface state between the ceramic layer and the metal electrodes has a significant impact on the overall performance of the device. On the one hand, to ensure current transmission capability, the interface needs to have low contact resistance; on the other hand, to improve structural reliability, the interface needs to possess good bonding strength to prevent interface failure under thermal cycling or high-current surges.

[0004] However, under current process conditions, the interface between ceramics and metals typically exhibits a relatively uniform bonding state. For example, during sintering, interfacial reactions often occur simultaneously throughout the entire contact area, easily forming a continuous reaction layer or diffusion layer. This interfacial structure is beneficial to improving bonding strength to some extent, but it may also lead to an increase in interfacial resistance, thereby affecting the conductivity of the device. Conversely, if the degree of interfacial reaction is insufficient, although a lower contact resistance can be obtained, the interfacial bonding strength may decrease, thus affecting the reliability of the device under high-power operating conditions.

[0005] Therefore, in the existing technology, how to ensure the interfacial bonding strength while taking into account the conductivity has become an urgent technical problem to be solved in the structural design and manufacturing process of ceramic capacitors. Summary of the Invention

[0006] To address the aforementioned technical problems, this application provides a method for preparing a high-power ceramic capacitor and the ceramic capacitor itself.

[0007] The technical solution provided in this application is described below:

[0008] The first aspect of this application provides a method for preparing a high-power ceramic capacitor, the method comprising: Discretely distributed interface microstructure units are constructed on at least one surface of a prefabricated ceramic matrix layer. The interface microstructure units are local structures with height differences and / or composition differences relative to the surface of the ceramic matrix layer, used to define reaction-triggered regions and non-triggered regions set at intervals. The interface microstructure units are discontinuously distributed and have a preset distribution density. The surface of the prefabricated metal electrode layer is activated to give the surface of the metal electrode layer interfacial activity that preferentially reacts with the interface microstructure unit. The metal electrode layer is stacked with the ceramic substrate layer, and the interface microstructure unit is located at the contact interface to form a stacked structure. The stacked structure is heat-treated to cause the reaction-triggered region to preferentially undergo an interfacial reaction to form a reaction bonding region, while the non-triggered region suppresses the interfacial reaction to retain the direct conductive contact region between the metal electrode layer and the ceramic substrate layer. This results in a discontinuous composite interface structure at the interface, in which the reaction bonding region and the conductive contact region are alternately distributed. The area ratio of the reaction bonding region to the conductive contact region is within a preset range. The heat-treated laminated structure is post-processed to obtain a ceramic capacitor.

[0009] Optionally, the step of constructing discretely distributed interface microstructure units on at least one surface of the prefabricated ceramic substrate layer, wherein the interface microstructure units are local structures with height and / or compositional differences relative to the surface of the ceramic substrate layer, used to define spaced-apart reaction-triggered regions and non-triggered regions, wherein the interface microstructure units are discontinuously distributed and have a preset distribution density, including: The surface of the ceramic substrate layer is pretreated to form a treated surface with initial roughening characteristics; Multiple spaced-apart localized modification regions are selectively formed on the treated surface, such that the localized modification regions are different from the surrounding regions in terms of material composition and / or structural morphology. The structure of the locally modified region is controlled so that the locally modified region forms a predetermined height difference and / or composition difference relative to the surface of the ceramic matrix layer, thereby forming an interface microstructure unit. By controlling the spatial properties of the locally modified region, the interface microstructure units are discretely distributed on the surface of the ceramic matrix layer and have a preset distribution density, thereby defining the reaction triggering region and the non-triggering region.

[0010] Optionally, the selective formation of multiple spaced-apart locally modified regions on the treated surface, such that the locally modified regions differ from the surrounding regions in material composition and / or structural morphology, includes: A spatially selective region-defining structure is constructed on the processing surface to define target regions at multiple preset locations on the processing surface; A modifying substance is introduced into the target area to cause changes in the material composition and / or structural morphology of the target area, forming a locally modified area; Remove the region-defining structure, so that the locally modified regions remain on the treated surface in an intermittently distributed manner; Adjust the spatial parameters of the target region so that the locally modified region forms a preset distribution pattern on the processed surface.

[0011] Optionally, before heat-treating the laminated structure, the method further includes: A spatially non-uniform energy field is applied to the contact interface to create an energy distribution difference between the reaction-triggered region and the non-triggered region.

[0012] Optionally, applying a spatially non-uniform energy field to the contact interface to create an energy distribution difference between the triggered and non-triggered regions includes: Energy-selective action conditions are constructed at the contact interface to define multiple energy-active and non-active regions; By applying a higher energy input to the energy-affected area than to the non-affected area through a local energy input device, an energy field with a spatially uneven distribution is formed at the contact interface.

[0013] Optionally, after constructing discretely distributed interfacial microstructure units on at least one surface of the prefabricated ceramic matrix layer, the method further includes: A diffusion regulation structure is constructed to form a differentiated diffusion path between the reaction-triggered region and the non-triggered region.

[0014] Optionally, constructing a diffusion regulation structure to form a differentiated diffusion path between the reaction-triggered region and the non-triggered region includes: On the surface of the ceramic substrate layer, at the location corresponding to the interface microstructure unit, a layered diffusion control layer is constructed. The diffusion control layer covers at least a portion of the reaction triggering region and / or non-triggering region. The diffusion control layer is a material layer with different diffusion characteristics relative to the ceramic substrate layer and / or metal electrode layer. By controlling the physical parameters of the diffusion control layer, differentiated diffusion paths are formed between the reaction-triggered region and the non-triggered region in the interface direction or in a direction perpendicular to the contact interface.

[0015] Optionally, the surface of the pre-fabricated metal electrode layer is activated to give the surface of the metal electrode layer interfacial activity that preferentially reacts with the interfacial microstructure unit, including: The surface of the metal electrode layer is pretreated; The surface of the pretreated metal electrode layer is subjected to interface regulation treatment so that an active surface layer with active components is formed on the surface. The physical parameters of the active surface layer are adjusted so that the active surface layer has a higher tendency for interfacial reaction compared with the non-triggering region.

[0016] A second aspect of this application provides a ceramic capacitor, comprising a ceramic substrate layer and a metal electrode layer; at least one surface of the ceramic substrate layer is provided with discretely distributed interface microstructure units, each interface microstructure unit being a local structure having a height difference and / or a composition difference relative to the surface of the ceramic substrate layer, used to define a reaction-triggered region and a non-triggered region spaced apart, the interface microstructure units being discontinuously distributed and having a preset distribution density; the metal electrode layer is stacked with the ceramic substrate layer, the interface microstructure units being located at the contact interface between the ceramic substrate layer and the metal electrode layer; the contact interface is provided with a discontinuous composite interface structure consisting of alternating reaction bonding regions and conductive contact regions, the reaction bonding regions being bonding structures formed by preferential interface reactions in the reaction-triggered regions, the conductive contact regions being direct conductive contact structures between the metal electrode layer and the ceramic substrate layer retained after the non-triggered regions suppress interface reactions, the area ratio of the reaction bonding regions to the conductive contact regions being within a preset range.

[0017] Optionally, the surface of the ceramic substrate layer with the interface microstructure unit is a treated surface with initial roughening characteristics; the interface microstructure unit is a locally modified region distributed at intervals on the treated surface, the locally modified region being different from the surrounding region in terms of material composition and / or structural morphology, and forming a predetermined height difference and / or composition difference relative to the surface of the ceramic substrate layer; the interface microstructure unit is discretely distributed on the surface of the ceramic substrate layer with a preset distribution density controlled by the spatial properties of the locally modified region, so as to define the reaction triggering region and the non-triggering region.

[0018] Optionally, a diffusion control structure is further provided at the contact interface between the ceramic substrate layer and the metal electrode layer, and the diffusion control structure forms a differentiated diffusion path between the reaction triggering region and the non-triggering region.

[0019] Optionally, the diffusion control structure is a layered diffusion control layer, which covers at least a portion of the reaction-triggered region and / or the non-triggered region; the diffusion control layer is a material layer with different diffusion characteristics relative to the ceramic substrate layer and / or the metal electrode layer, and the diffusion control layer forms differentiated diffusion paths for the reaction-triggered region and the non-triggered region in the interface direction or in a direction perpendicular to the contact interface.

[0020] As can be seen from the above technical solutions, this application has the following beneficial effects: 1. This application constructs discretely distributed interface microstructure units on the surface of a ceramic substrate layer, and combines the activation treatment of the metal electrode layer surface with the synergistic regulation of the subsequent heat treatment process, so that the reaction behavior at the interface is selectively controlled in space, thereby forming an interface structure between the ceramic substrate layer and the metal electrode layer with alternating distribution of reaction bonding regions and conductive contact regions.

[0021] 2. In this application, the reaction bonding region and the conductive contact region are not independent entities, but rather form an organically integrated whole through their spaced distribution: on the one hand, the reaction bonding region forms a stable bonding structure through interfacial reaction, improving the bonding reliability of the interface; on the other hand, the conductive contact region retains a direct contact path, which helps to reduce interfacial resistance and maintain current transmission capability. Because the two are discretely distributed at the interface and work synergistically with each other, the interface maintains good conductivity while possessing a stable structural bonding state. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 This is a schematic flowchart of the first embodiment of the method for preparing a high-power ceramic capacitor provided in this application; Figure 2 This is a schematic flowchart of a second embodiment of the method for preparing a high-power ceramic capacitor provided in this application; Figure 3 This is a schematic flowchart of the third embodiment of the method for preparing the high-power ceramic capacitor provided in this application; Figure 4 This is a schematic flowchart illustrating an implementation of step S101 in the first embodiment of the method for preparing a high-power ceramic capacitor provided in this application. Figure 5This is a partial structure and a magnified schematic diagram of a high-power ceramic capacitor provided in this application; Figure 6 This is another partial structure and a partially enlarged schematic diagram of the high-power ceramic capacitor provided in this application; Figure 7 This is a schematic diagram of an embodiment of the contact interface in the high-power ceramic capacitor provided in this application. Detailed Implementation

[0024] The ceramic capacitor described in this application has an interface structure with alternating reactive bonding regions and conductive contact regions between the ceramic substrate layer and the metal electrode layer. This structure makes it suitable for various applications with high requirements for current carrying capacity and structural reliability while taking into account both conductivity and interface stability.

[0025] For example, in high-power power modules, capacitors need to operate under high current conditions for extended periods. The ceramic capacitor described in this application, by retaining conductive contact areas, helps reduce interface resistance, thereby meeting the requirements for high current transmission. At the same time, the reactive bonding region provides interfacial bonding strength, which helps improve structural stability under thermal shock and load fluctuation conditions.

[0026] For example, in power conversion circuits or energy management systems, devices are often in a state of frequent start-stop or load changes, which places higher demands on the stability of the devices. The ceramic capacitors described in this application, due to their partitioned interface structure, help to mitigate interface performance degradation and improve device lifespan under repeated thermal cycling or current surges. Furthermore, in electronic devices with high space utilization requirements, these ceramic capacitors can also be used as high power density components, achieving high current carrying capacity and stability within a limited volume.

[0027] Please see Figure 1 as well as Figures 5 to 7 This application first provides an embodiment of a method for preparing a high-power ceramic capacitor, which includes: S101. Construct discretely distributed interface microstructure units on at least one surface of a prefabricated ceramic substrate layer. The interface microstructure units are local structures with height differences and / or composition differences relative to the surface of the ceramic substrate layer, used to define reaction-triggered regions and non-triggered regions set at intervals. The interface microstructure units are discontinuously distributed and have a preset distribution density. This step involves constructing discretely distributed interfacial microstructure units on at least one surface of a pre-fabricated ceramic substrate layer. Specifically, the ceramic substrate layer can be a dense or semi-dense ceramic sheet formed through pre-sintering, and its material can be a conventional dielectric ceramic material. In this step, the surface of the ceramic substrate layer is first subjected to basic treatment to obtain a treated surface suitable for subsequent structural construction. For example, surface impurities and irregular attachments can be removed through mechanical polishing, sandblasting, or simple cleaning.

[0028] Multiple local regions are formed on the processed surface, distinguishing these regions from the surrounding regions in terms of structural morphology and / or material composition, thereby forming the interface microstructure unit. The interface microstructure unit may manifest as a structure with minute protrusions or depressions relative to the substrate surface, or as a region where the local material composition is altered.

[0029] For example, in one embodiment, a micro-region structure with height differences can be formed on the surface by local etching or local deposition; in another embodiment, the surface composition of some areas can be changed by locally introducing modified materials.

[0030] In this way, the interface microstructure units are discretely distributed on the surface, and reactive triggering regions and non-triggering regions are formed at intervals within the surface.

[0031] In an optional embodiment of this application, the process of constructing interface microstructure units on the surface of the ceramic substrate layer can be achieved by the following steps: S1011. The surface of the ceramic substrate layer is pretreated to form a treated surface with initial roughening characteristics; In this embodiment, the surface of the ceramic substrate layer is first pretreated to obtain a treated surface with initial structural characteristics. Specifically, the surface of the ceramic substrate layer can be cleaned and its morphology adjusted as needed, for example, by removing adhering impurities through mechanical processing or other surface treatments, and forming a certain degree of roughening on the surface to provide the basic conditions required for subsequent local modification. The pretreated surface may exhibit irregular undulations or active site distribution at the microscale, which is beneficial for subsequent regional selective processing.

[0032] S1012. Selectively forming multiple spaced local modification regions on the treated surface, such that the local modification regions are different from the surrounding regions in terms of material composition and / or structural morphology. Multiple locally modified regions are selectively formed on the treated surface, making these regions distinct from the surrounding areas in terms of material composition and / or structural morphology. Specifically, the surface can be regionally controlled through localized action, causing some areas to be modified while others remain essentially unchanged, thereby forming spaced modified regions on the surface. These locally modified regions can manifest as areas where the local material composition has changed, or areas where the surface structural morphology has changed, or a combination of both.

[0033] Specifically, in step S1012, the process of selectively forming locally modified regions on the processing surface can be achieved by constructing a spatially selective region-defining structure: constructing a spatially selective region-defining structure on the processing surface to define multiple target regions at preset locations on the processing surface; introducing a modifying substance into the target regions to cause changes in material composition and / or structural morphology, forming locally modified regions; removing the region-defining structure so that the locally modified regions are retained on the processing surface in an intermittently distributed manner; and adjusting the spatial parameters of the target regions so that the locally modified regions form a preset distribution pattern on the processing surface.

[0034] In this implementation, a region-defining structure is first constructed on the processing surface to define multiple target regions at preset locations. The region-defining structure can cover a portion of the surface area, and the uncovered areas or specific exposed areas correspond to the target regions, thereby selectively defining the modification locations in space. Further, a modifying substance is introduced into the target regions, causing changes in material composition and / or structural morphology, thus forming locally modified regions. The modifying substance can act within the target regions, distinguishing them from the surrounding unmodified regions in terms of composition or microstructure, thereby forming local regions with differentiated characteristics.

[0035] After local modification is completed, the region-defining structure is removed, leaving the locally modified regions on the treated surface in an intermittently distributed manner. At this time, the areas originally covered by the region-defining structure are restored to their unmodified state, thus forming a surface distribution structure with spatial spacing together with the locally modified regions.

[0036] By adjusting the spatial parameters of the target region, the locally modified regions can form a predetermined distribution pattern on the treated surface. The spatial parameters may include the size, spacing, or arrangement of the target region. By controlling these parameters, the locally modified regions can exhibit a regular or irregular discrete distribution within the surface, thus providing a spatial basis for the subsequent differentiation of the interface reaction.

[0037] S1013. The structure of the locally modified region is adjusted so that the locally modified region forms a predetermined height difference and / or composition difference relative to the surface of the ceramic matrix layer, thereby forming an interface microstructure unit. In this embodiment, the locally modified region undergoes further structural control to create a predetermined height difference and / or compositional difference relative to the surrounding ceramic matrix surface, thereby forming the interface microstructure unit. During this process, the processing conditions can be adjusted to create micro-protrusions or depressions in the locally modified region's morphology, or to create local regions with compositions different from the surrounding areas, thereby enhancing the differential performance of these regions in subsequent interface reaction processes.

[0038] S1014. By controlling the spatial properties of the locally modified region, the interface microstructure units are discretely distributed on the surface of the ceramic matrix layer and have a preset distribution density, so as to define the reaction triggering region and the non-triggering region.

[0039] By controlling the spatial distribution of the locally modified regions, the resulting interfacial microstructure units are discretely distributed on the surface of the ceramic substrate layer with a preset distribution density. Specifically, the number, spacing, or distribution pattern of the locally modified regions can be controlled to create in-plane intervals, thereby defining multiple reaction-triggered and non-triggered regions on the interface. The alternating spatial distribution of these reaction-triggered and non-triggered regions provides the foundation for the differentiated occurrence of subsequent interfacial reactions.

[0040] S102. The surface of the prefabricated metal electrode layer is activated to make the surface of the metal electrode layer have interfacial activity that preferentially reacts with the interface microstructure unit. The surface of the pre-fabricated metal electrode layer is activated to give it interfacial activity that preferentially reacts with the interfacial microstructure units. Specifically, the metal electrode layer can be copper, nickel, or other conductive metal layers. In this step, the metal electrode layer can be pre-treated to remove surface contaminants and expose the metal substrate surface, for example, through cleaning or simple surface treatment. Then, the surface of the metal electrode layer is subjected to interfacial modulation treatment to form a surface structure with high reactivity. This surface structure can manifest as regions where the surface state changes, such as increased surface energy or enhanced reactivity.

[0041] For example, in one embodiment, an active layer can be formed on the metal surface through controlled processing; in another embodiment, surface defects or changes in surface state can be introduced to make it more likely to participate in interfacial reactions during subsequent heat treatment.

[0042] This process ensures that when the metal electrode layer comes into contact with the ceramic substrate layer, an interfacial reaction preferentially occurs at the reaction trigger region.

[0043] S103. The metal electrode layer and the ceramic substrate layer are stacked together, and the interface microstructure unit is located at the contact interface to form a stacked structure. In this embodiment, the metal electrode layer and the ceramic substrate layer are stacked, with the interface microstructure units located at the contact interface to form a stacked structure. Specifically, during the stacking process, the metal electrode layer and the ceramic substrate layer are aligned so that the interface microstructure units are correspondingly located in the contact interface region between them. If necessary, a certain pressure can be applied to ensure sufficient contact at the interface without significantly disrupting the distribution of the interface microstructure units. Through this step, the reaction-triggered region and the non-triggered region defined by the interface microstructure units are correspondingly manifested at the interface.

[0044] S104. The stacked structure is heat-treated so that the reaction triggering region preferentially undergoes an interface reaction to form a reaction bonding region, and the non-triggering region suppresses the interface reaction to retain the direct conductive contact area between the metal electrode layer and the ceramic substrate layer, thereby forming a discontinuous composite interface structure at the interface in which the reaction bonding region and the conductive contact area are alternately distributed, and the area ratio of the reaction bonding region and the conductive contact area is within a preset range. The stacked structure is heat-treated to induce a controlled interfacial reaction at the interface.

[0045] During the heat treatment process, under the combined effect of the interface microstructure unit and the surface state of the metal electrode layer, the reaction-triggered region and the non-triggered region exhibit different interface reaction behaviors: the reaction-triggered region preferentially undergoes interface reaction to form a reaction bonding region; while the interface reaction in the non-triggered region is suppressed, thereby preserving the direct contact state between the metal electrode layer and the ceramic substrate layer to form a conductive contact region.

[0046] The differentiated reaction behavior in this step creates a structural morphology at the interface consisting of alternating reactive binding regions and conductive contact regions.

[0047] In one embodiment, the distribution state of the reaction bonding region and the conductive contact region can be stabilized by adjusting the heat treatment conditions (e.g., temperature or time), and the two can form a distribution structure with a certain proportional relationship at the interface.

[0048] S105. Post-process the heat-treated laminated structure to obtain a ceramic capacitor.

[0049] The heat-treated laminated structure undergoes post-processing to obtain the target ceramic capacitor. Specifically, the post-processing may include shaping and surface treatment of the laminated structure to meet practical application requirements. During the post-processing, processing conditions are carefully controlled to avoid significant damage to the formed interface structure. For example, the structure may be cut or simply processed to obtain a predetermined size, and exposed conductive parts may be treated to form a stable electrical connection structure. Finally, a ceramic capacitor with the aforementioned interface structure characteristics is obtained.

[0050] In the foregoing embodiments, in order to enable those skilled in the art to better understand and implement the present invention, the material composition involved is illustrated below, but this application is not limited to the following specific materials.

[0051] In the foregoing embodiments, the ceramic substrate layer may be a dielectric ceramic material, such as a barium titanate-based ceramic system. In one example, the ceramic material may be: BaTiO3-based materials can also be used; in other embodiments, doped and modified perovskite ceramic materials, such as modified systems containing elements like Ca, Sr, or Zr, can also be selected. Furthermore, other ceramic material systems with dielectric properties can also be used. The metal electrode layer can be made of a metal material with good electrical conductivity, such as copper or nickel. In one example, oxygen-free copper can be used as the electrode material to obtain lower resistance; in other embodiments, materials such as nickel or copper alloys can also be used.

[0052] The modifying material introduced into the locally modified region can be a substance capable of altering the surface material composition or interfacial reaction characteristics of the ceramic matrix layer. For example, in one embodiment, a metal oxide can be used as the modifying material to change the composition of the local region; in other embodiments, a glassy phase material or a silicon-containing material can be used to make the local region exhibit different reaction characteristics during subsequent heat treatment. Furthermore, other substances that can influence the interfacial reaction behavior can be selected as needed.

[0053] Surface activation of the metal electrode layer can be achieved by altering its surface state, for example, by forming a surface structure with high reactivity. In one example, the interfacial reactivity can be improved by forming an oxide layer or other active layer on the metal surface; in other embodiments, similar effects can be achieved by altering the surface microstructure or introducing surface defects.

[0054] The following embodiments, based on the above embodiments, further regulate the interfacial reaction process by introducing a spatially non-uniform energy field to achieve enhanced control over the interfacial reaction behavior. See also Figure 2 The method for preparing a high-power ceramic capacitor provided in this embodiment includes the following steps: S201. Construct discretely distributed interface microstructure units on at least one surface of a prefabricated ceramic substrate layer. The interface microstructure units are local structures with height differences and / or composition differences relative to the surface of the ceramic substrate layer, used to define reaction-triggered regions and non-triggered regions set at intervals. The interface microstructure units are discontinuously distributed and have a preset distribution density. S202. The surface of the prefabricated metal electrode layer is activated to make the surface of the metal electrode layer have interfacial activity that preferentially reacts with the interface microstructure unit. S203. The metal electrode layer and the ceramic substrate layer are stacked together, and the interface microstructure unit is located at the contact interface to form a stacked structure. S204. Apply a spatially non-uniform energy field to the contact interface to create an energy distribution difference between the reaction-triggered region and the non-triggered region; Specifically, in this step, an energy field can be introduced into the interface region through external action, causing differences in the energy received by different regions of the interface. The energy field can manifest as thermal energy, electric field energy, or other forms of energy input, and its spatial distribution can match or be correlated with the distribution state of the interface microstructure units.

[0055] In one embodiment, the energy field has a relatively high energy density at the reaction-triggered region and a relatively low energy density at the non-triggered region, thus creating an energy gradient distribution at the interface. This spatially non-uniform energy input allows different regions of the interface to experience different reaction driving forces during subsequent heat treatment.

[0056] Specifically, one implementation of this step includes: constructing energy-selective action conditions at the contact interface to define multiple energy-acting regions and non-acting regions; applying higher energy input to the energy-acting regions than to the non-acting regions through a local energy input device, thereby creating a spatially uneven energy field at the contact interface.

[0057] In this implementation, spatially selective energy interaction conditions are first constructed at the contact interface to define multiple energy-interacting and non-interacting regions within the interface area. These energy-interacting and non-interacting regions can be configured according to the distribution of the interface's microstructural units, ensuring different energy response conditions at different locations on the interface during subsequent energy input. This method allows for the pre-establishment of a spatial basis for energy distribution differences at the interface level.

[0058] Energy is applied to the contact interface through a local energy input device, so that the energy-affected area receives a higher energy input than the non-affected area. The local energy input device can be an energy application unit capable of spatially directional or regional action, and its range of action can cover a local area of ​​the interface, thereby achieving differentiated energy input to different locations on the interface.

[0059] In one embodiment, the effective position or range of the local energy input device can be controlled to primarily act on the energy-affected area; in another embodiment, the energy input conditions can be adjusted to create a difference in energy input intensity between the energy-affected area and the non-affected area. Through these methods, a spatially uneven energy distribution is created at the contact interface.

[0060] S205. The stacked structure is heat-treated so that the reaction triggering region preferentially undergoes an interface reaction to form a reaction bonding region, and the non-triggering region suppresses the interface reaction to retain the direct conductive contact area between the metal electrode layer and the ceramic substrate layer, thereby forming a discontinuous composite interface structure at the interface in which the reaction bonding region and the conductive contact area are alternately distributed, and the area ratio of the reaction bonding region and the conductive contact area is within a preset range. S206. Post-process the heat-treated laminated structure to obtain a ceramic capacitor.

[0061] In this embodiment, the implementation of steps not described in detail is the same as that of the corresponding steps in the foregoing embodiments, and will not be repeated here.

[0062] In the above embodiments, the interface microstructure units mainly define the interface reaction locations through spatial distribution characteristics, thereby achieving a certain degree of distinction between reaction-triggered and non-triggered regions. However, in actual interface reactions, mass migration behavior also has a significant impact on the occurrence and development of interface reactions. Relying solely on structural distribution to regulate reaction locations is insufficient in some cases to further enhance the reaction differences between regions.

[0063] Based on this, this embodiment introduces a diffusion control structure on the basis of the above-mentioned structural control. By designing the material diffusion path and diffusion resistance in different regions of the interface differently, the reaction triggering region and the non-triggering region will have different material migration behaviors, thereby further enhancing the selectivity of the interface reaction in the subsequent heat treatment process.

[0064] See Figure 3 This embodiment includes: S301. Construct discretely distributed interface microstructure units on at least one surface of a prefabricated ceramic substrate layer. The interface microstructure units are local structures with height differences and / or composition differences relative to the surface of the ceramic substrate layer, used to define reaction-triggered regions and non-triggered regions set at intervals. The interface microstructure units are discontinuously distributed and have a preset distribution density. S302. Construct a diffusion regulation structure to form a differentiated diffusion path between the reaction-triggered region and the non-triggered region; In this embodiment, the diffusion regulation structure is mainly used to form differentiated diffusion paths between the reaction triggering region and the non-triggering region, thereby regulating the material migration behavior during the interface reaction process.

[0065] In one embodiment, the diffusion control structure is constructed on the surface of the ceramic substrate layer, in the region where the interface microstructure unit is located, and / or at the interface between the ceramic substrate layer and the metal electrode layer. By introducing structural units with different diffusion characteristics near the interface, different regions of the interface exhibit different material diffusion behaviors during subsequent heat treatment.

[0066] Specifically, local structures with differential diffusion characteristics can be constructed at the corresponding locations of the reaction-triggered and non-triggered regions. For example, a diffusion channel structure that facilitates mass migration can be constructed at the location corresponding to the reaction-triggered region, making it easier for relevant elements to migrate and exchange during the interfacial reaction; while at the location corresponding to the non-triggered region, a structure with a certain diffusion-blocking effect can be constructed to inhibit mass migration in that region.

[0067] The diffusion control structure can manifest as a structure with local material composition differences, such as introducing materials with different diffusion coefficients in certain regions; it can also manifest as a structure with structural morphology differences, such as forming a combination of dense and relatively loose regions to create differences in diffusion resistance in different regions; or it can be a combination of the above-mentioned forms.

[0068] In one embodiment, the diffusion path in a local area can be made relatively unobstructed by forming continuous or semi-continuous diffusion channels; in another embodiment, the diffusion path can be interrupted or bent by forming discontinuously distributed barrier structures or dense structures in a local area, thereby increasing the diffusion resistance.

[0069] The method in this embodiment enables the interface to form a spatially differentiated diffusion structure, thereby creating a difference in the material migration rate between the reaction-triggered region and the non-triggered region during subsequent heat treatment, which can further enhance the regional selectivity of the interface reaction.

[0070] In an optional embodiment, one implementation of this step includes: constructing a layered diffusion control layer on the surface of the ceramic substrate layer, corresponding to the location of the interface microstructure unit, the diffusion control layer covering at least a portion of the reaction-triggered region and / or non-triggered region, the diffusion control layer being a material layer with different diffusion characteristics relative to the ceramic substrate layer and / or metal electrode layer; and by controlling the physical parameters of the diffusion control layer, forming differentiated diffusion paths between the reaction-triggered region and the non-triggered region in the interface direction or in a direction perpendicular to the contact interface.

[0071] S303. The surface of the prefabricated metal electrode layer is activated to make the surface of the metal electrode layer have interfacial activity that preferentially reacts with the interface microstructure unit. In this embodiment, one embodiment of step S303 includes: pre-treating the surface of the metal electrode layer; performing interface regulation treatment on the pre-treated surface of the metal electrode layer to form an active surface layer with active components; and regulating the physical parameters of the active surface layer to make the active surface layer have a higher interface reaction tendency compared with the non-triggering region.

[0072] Specifically, in this embodiment, the activation step of the metal electrode layer can be achieved by constructing an active surface layer with differential reaction characteristics on its surface. First, the surface of the metal electrode layer needs to be pretreated to remove surface contaminants or unstable layers and to bring the metal surface into a state suitable for subsequent regulation. The pretreated metal surface can expose the substrate metal structure or form an initial surface with certain active sites.

[0073] The surface of the pretreated metal electrode layer is subjected to interface modulation treatment to form an active surface layer containing active components. This active surface layer can be a component layer with high reactivity introduced onto the metal surface, or a structural layer with high interfacial activity formed by altering the surface state. This makes the surface layer more readily participate in interfacial reactions during subsequent interfacial contact and heat treatment.

[0074] In this embodiment, the physical parameters may include the thickness, continuity, or structural density of the active surface layer. By adjusting these parameters, the active surface layer is more likely to undergo interfacial reactions in the reaction-triggered regions corresponding to the interfacial microstructure units, while the reaction tendency in the corresponding non-triggered regions is relatively low.

[0075] In one embodiment, the active surface layer can be configured to have a structural state more conducive to the reaction at the location corresponding to the reaction triggering region, such as higher activity or lower reaction resistance; while at the location corresponding to the non-triggering region, the occurrence of the interfacial reaction can be suppressed to a certain extent by controlling its physical parameters.

[0076] S304. The metal electrode layer and the ceramic substrate layer are stacked together, and the interface microstructure unit is located at the contact interface to form a stacked structure. S305. The stacked structure is heat-treated so that the reaction triggering region preferentially undergoes an interface reaction to form a reaction bonding region, and the non-triggering region suppresses the interface reaction to retain the direct conductive contact area between the metal electrode layer and the ceramic substrate layer, thereby forming a discontinuous composite interface structure at the interface in which the reaction bonding region and the conductive contact area are alternately distributed, and the area ratio of the reaction bonding region and the conductive contact area is within a preset range. S306. Post-process the heat-treated laminated structure to obtain a ceramic capacitor.

[0077] In this embodiment, the implementation of steps not described in detail is the same as that of the corresponding steps in the foregoing embodiments, and will not be repeated here.

[0078] See Figures 5 to 7 This application provides an embodiment of a ceramic capacitor, which includes: Ceramic substrate layer 1 and metal electrode layer 2; At least one surface of the ceramic substrate layer 1 is provided with discretely distributed interface microstructure units 3. The interface microstructure unit 3 is a local structure with a height difference and / or composition difference relative to the surface of the ceramic substrate layer 1, used to define the reaction triggering region 4 and non-triggering region 5 set at intervals. The interface microstructure unit 3 is discontinuously distributed and has a preset distribution density. The metal electrode layer 2 is stacked with the ceramic substrate layer 1, and the interface microstructure unit 3 is located at the contact interface between the ceramic substrate layer 1 and the metal electrode layer 2. The contact interface is provided with a discontinuous composite interface structure 8 consisting of alternating reaction bonding regions 6 and conductive contact regions 7. The reaction bonding regions 6 are bonding structures formed by preferential interface reactions in the reaction triggering region 4. The conductive contact regions 7 are direct conductive contact structures between the metal electrode layer 2 and the ceramic substrate layer 1, which are retained after the interface reaction is suppressed by the non-triggering region 5. The area ratio of the reaction bonding regions 6 to the conductive contact regions 7 is within a preset range.

[0079] Optionally, the surface of the ceramic substrate layer 1 with the interface microstructure unit 3 is a treated surface 11 with initial roughening characteristics; the interface microstructure unit 3 is a locally modified region distributed at intervals on the treated surface 11, the locally modified region is different from the surrounding region in terms of material composition and / or structural morphology, and has a predetermined height difference and / or composition difference relative to the surface of the ceramic substrate layer 1; the interface microstructure unit 3 is discretely distributed on the surface of the ceramic substrate layer 1 with a preset distribution density by controlling the spatial properties of the locally modified region, so as to define the reaction triggering region 4 and the non-triggering region 5.

[0080] Optionally, a diffusion control structure 9 is further provided at the contact interface between the ceramic substrate layer 1 and the metal electrode layer 2, and the diffusion control structure 9 forms a differentiated diffusion path between the reaction triggering region 4 and the non-triggering region 5.

[0081] Optionally, the diffusion control structure 9 is a layered diffusion control layer, which covers at least a portion of the reaction triggering region 4 and / or the non-triggering region 5; the diffusion control layer is a material layer with different diffusion characteristics relative to the ceramic substrate layer 1 and / or the metal electrode layer 2, and the diffusion control layer forms differentiated diffusion paths for the reaction triggering region 4 and the non-triggering region 5 in the interface direction or in a direction perpendicular to the contact interface.

[0082] It should be understood that the foregoing method embodiments are only used to illustrate the implementation ideas and processes of the technical solutions of this application, and do not constitute the only limitation on the implementation methods. After reading the above content, those skilled in the art can implement the corresponding functions based on the same design concept through software, hardware, or a combination of software and hardware. To further illustrate the technical solutions of this application, the device structure capable of executing the foregoing methods will be described below in conjunction with device embodiments. It should be noted that the device embodiments and method embodiments correspond to each other, and their module division can correspond one-to-one with the method steps, or can be recombined, split, or implemented in an equivalent manner according to specific implementation needs.

[0083] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0084] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection between apparatuses or units through some interfaces, and may be electrical, mechanical, or other forms.

[0085] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0086] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0087] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

Claims

1. A method for preparing a high-power ceramic capacitor, characterized in that, The method includes: Discretely distributed interface microstructure units are constructed on at least one surface of a prefabricated ceramic matrix layer. The interface microstructure units are local structures with height differences and / or composition differences relative to the surface of the ceramic matrix layer, used to define reaction-triggered regions and non-triggered regions set at intervals. The interface microstructure units are discontinuously distributed and have a preset distribution density. The surface of the prefabricated metal electrode layer is activated to give the surface of the metal electrode layer interfacial activity that preferentially reacts with the interface microstructure unit. The metal electrode layer is stacked with the ceramic substrate layer, and the interface microstructure unit is located at the contact interface to form a stacked structure. The stacked structure is heat-treated to cause the reaction-triggered region to preferentially undergo an interfacial reaction to form a reaction bonding region, while the non-triggered region suppresses the interfacial reaction to retain the direct conductive contact region between the metal electrode layer and the ceramic substrate layer. This results in the formation of a discontinuous composite interface structure at the contact interface, in which the reaction bonding region and the conductive contact region are alternately distributed. The area ratio of the reaction bonding region to the conductive contact region is within a preset range. The heat-treated laminated structure is then post-processed to obtain a ceramic capacitor.

2. The method for preparing a high-power ceramic capacitor according to claim 1, characterized in that, The method involves constructing discretely distributed interface microstructure units on at least one surface of a prefabricated ceramic substrate layer. Each interface microstructure unit is a local structure with a height difference and / or composition difference relative to the surface of the ceramic substrate layer, used to define spaced-apart reaction-triggered and non-triggered regions. The interface microstructure units are discontinuously distributed and have a preset distribution density, including: The surface of the ceramic substrate layer is pretreated to form a treated surface with initial roughening characteristics; Multiple spaced-apart localized modification regions are selectively formed on the treated surface, such that the localized modification regions are different from the surrounding regions in terms of material composition and / or structural morphology. The structure of the locally modified region is controlled so that the locally modified region forms a predetermined height difference and / or composition difference relative to the surface of the ceramic matrix layer, thereby forming an interface microstructure unit. By controlling the spatial properties of the locally modified region, the interface microstructure units are discretely distributed on the surface of the ceramic matrix layer and have a preset distribution density, thereby defining the reaction triggering region and the non-triggering region.

3. The method for preparing a high-power ceramic capacitor according to claim 2, characterized in that, The selective formation of multiple spaced-apart locally modified regions on the treated surface, such that the locally modified regions differ from the surrounding regions in material composition and / or structural morphology, includes: A spatially selective region-defining structure is constructed on the processing surface to define target regions at multiple preset locations on the processing surface; A modifying substance is introduced into the target area to cause changes in the material composition and / or structural morphology of the target area, forming a locally modified area; Remove the region-defining structure, so that the locally modified regions are retained on the treated surface in an intermittently distributed manner; Adjust the spatial parameters of the target region so that the locally modified region forms a preset distribution pattern on the processed surface.

4. The method for preparing a high-power ceramic capacitor according to claim 1, characterized in that, Before heat treatment of the laminated structure, the method further includes: A spatially non-uniform energy field is applied to the contact interface to create an energy distribution difference between the reaction-triggered region and the non-triggered region.

5. The method for preparing a high-power ceramic capacitor according to claim 4, characterized in that, Applying a spatially non-uniform energy field to the contact interface to create an energy distribution difference between the triggered and non-triggered regions includes: Energy-selective action conditions are constructed at the contact interface to define multiple energy-acting regions and non-acting regions; By applying a higher energy input to the energy-affected area than to the non-affected area through a local energy input device, an energy field with a spatially uneven distribution is formed at the contact interface.

6. The method for preparing a high-power ceramic capacitor according to claim 1, characterized in that, After constructing discretely distributed interfacial microstructure units on at least one surface of the prefabricated ceramic matrix layer, the method further includes: A diffusion regulation structure is constructed to form a differentiated diffusion path between the reaction-triggered region and the non-triggered region.

7. The method for preparing a high-power ceramic capacitor according to claim 6, characterized in that, The construction of the diffusion regulation structure to form a differentiated diffusion path between the reaction-triggered region and the non-triggered region includes: On the surface of the ceramic substrate layer, at the location corresponding to the interface microstructure unit, a layered diffusion control layer is constructed. The diffusion control layer covers at least a portion of the reaction triggering region and / or non-triggering region. The diffusion control layer is a material layer with different diffusion characteristics relative to the ceramic substrate layer and / or metal electrode layer. By controlling the physical parameters of the diffusion control layer, differentiated diffusion paths are formed between the reaction-triggered region and the non-triggered region in the interface direction or in a direction perpendicular to the contact interface.

8. The method for preparing a high-power ceramic capacitor according to claim 7, characterized in that, The surface of the pre-fabricated metal electrode layer is activated to give it interfacial activity that preferentially reacts with the interfacial microstructure units, including: The surface of the metal electrode layer is pretreated; The surface of the pretreated metal electrode layer is subjected to interface regulation treatment so that an active surface layer with active components is formed on the surface. The physical parameters of the active surface layer are adjusted so that the active surface layer has a higher tendency for interfacial reaction compared with the non-triggering region.

9. A ceramic capacitor, characterized in that, The system includes a ceramic substrate layer and a metal electrode layer. At least one surface of the ceramic substrate layer is provided with discretely distributed interface microstructure units. Each interface microstructure unit is a local structure with a height difference and / or composition difference relative to the surface of the ceramic substrate layer, used to define spaced reaction-triggered regions and non-triggered regions. The interface microstructure units are discontinuously distributed and have a preset distribution density. The metal electrode layer is stacked with the ceramic substrate layer, and the interface microstructure units are located at the contact interface between the ceramic substrate layer and the metal electrode layer. The contact interface is provided with a discontinuous composite interface structure consisting of alternating reaction bonding regions and conductive contact regions. The reaction bonding region is a bonding structure formed by preferential interface reaction in the reaction-triggered region, and the conductive contact region is a direct conductive contact structure between the metal electrode layer and the ceramic substrate layer, retained after the non-triggered region suppresses the interface reaction. The area ratio of the reaction bonding region to the conductive contact region is within a preset range.

10. The ceramic capacitor according to claim 9, characterized in that, The surface of the ceramic substrate layer with the interface microstructure unit is a treated surface with initial roughening characteristics; the interface microstructure unit is a locally modified region distributed at intervals on the treated surface, the locally modified region is different from the surrounding region in terms of material composition and / or structural morphology, and has a predetermined height difference and / or composition difference relative to the surface of the ceramic substrate layer; the interface microstructure unit is discretely distributed on the surface of the ceramic substrate layer with a preset distribution density by controlling the spatial properties of the locally modified region, so as to define the reaction triggering region and the non-triggering region.

11. The ceramic capacitor according to claim 9, characterized in that, A diffusion control structure is also provided at the contact interface between the ceramic substrate layer and the metal electrode layer, and the diffusion control structure forms a differentiated diffusion path between the reaction triggering region and the non-triggering region.

12. The ceramic capacitor according to claim 11, characterized in that, The diffusion control structure is a layered diffusion control layer, which covers at least a portion of the reaction-triggered region and / or the non-triggered region. The diffusion control layer is a material layer with different diffusion characteristics relative to the ceramic substrate layer and / or the metal electrode layer. The diffusion control layer forms differentiated diffusion paths for the reaction-triggered region and the non-triggered region in the interface direction or in a direction perpendicular to the contact interface.

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