Perovskite solar cell and laminated cell, photovoltaic module, power generation device, power consumption device

Abstract

This invention relates to the field of batteries, specifically disclosing perovskite solar cells and tandem solar cells, photovoltaic modules, power generation devices, and power consumption devices. The perovskite solar cell of this invention includes: a first electrode layer; a hole transport layer disposed on one side of the first electrode layer; a perovskite layer disposed on the side of the hole transport layer opposite to the first electrode layer; and a second electrode layer disposed on the side of the perovskite layer opposite to the hole transport layer. The hole transport layer comprises a compound of Formula I and a hole transport material. This invention uses a compound of Formula I with electron-donating groups on both sides as an interface passivation material for the perovskite layer. The electron-donating groups on both sides generate chemical bonds and / or chemical interactions with cations in the perovskite layer, reducing interface defects in the perovskite layer, optimizing interface contact, and thus improving the photoelectric performance of the battery.

Description

Technical Field

[0001] This invention relates to the field of batteries, specifically to perovskite solar cells and tandem cells, photovoltaic modules, power generation devices, and power consumption devices. Background Technology

[0002] The harmful gases produced by burning traditional fossil fuels such as coal, oil, and natural gas severely pollute the ecological environment. Currently, the global energy supply is undergoing a comprehensive and accelerated transformation towards new energy sources. Among numerous clean energy sources, solar energy has attracted widespread attention due to its advantages such as wide distribution, huge reserves, long duration, and clean, pollution-free operation. Solar cell power generation, as the most direct method of converting solar energy into electrical energy, is considered one of the most promising solutions to address energy shortages. Among various solar cell materials, perovskite materials possess advantages such as high absorption coefficient, tunable optical bandgap, low exciton binding energy, and long carrier diffusion distance. However, defects easily form at the interface of the perovskite layer, adversely affecting the efficiency of perovskite solar cells. Summary of the Invention

[0003] In view of the technical problems existing in the background art, the present invention proposes a perovskite solar cell and tandem cell, photovoltaic module, power generation device, and power consumption device. The present invention uses a compound with electron-donating groups on both sides as a passivation material to generate chemical bonds and / or chemical forces with cations in the perovskite layer, thereby reducing interface defects in the perovskite layer and improving the photoelectric performance of the cell.

[0004] To achieve the above objectives, a first aspect of the present invention provides a perovskite solar cell, comprising:

[0005] First electrode layer;

[0006] A hole transport layer is disposed on one side of the first electrode layer;

[0007] A perovskite layer is disposed on the side of the hole transport layer opposite to the first electrode layer;

[0008] The second electrode layer is disposed on the side of the perovskite layer opposite to the hole transport layer.

[0009] The hole transport layer comprises the compound shown in Formula I and a hole transport material;

[0010]

[0011] In Formula I, A and B each independently include any one of N, P, O, or S;

[0012] R1 independently includes one or more of -(CH2)n1- or -(Ph)n2-;

[0013] n1 and n2 are each independent integers between 1 and 6;

[0014] R2 and R4 each independently include any one of empty, H, substituted or unsubstituted aryl, or substituted or unsubstituted alkyl;

[0015] R3 and R5 each independently include any one of empty, H, hydroxyl, substituted or unsubstituted aryl, or substituted or unsubstituted alkyl.

[0016] This invention uses a compound of Formula I with electron-donating groups on both sides as an interface passivation material for the perovskite layer. The electron-donating groups on both sides generate chemical bonds and / or chemical forces with the cations in the perovskite layer, reducing interface defects in the perovskite layer, optimizing interface contact, and thus improving the photoelectric performance of the battery.

[0017] In some embodiments of the present invention, n2 is independently any integer between 1 and 3. This further eliminates interface defects in the perovskite layer and improves photoelectric performance.

[0018] In some embodiments of the present invention, R1 independently includes any one of -CH2-, -(CH2)2-, -(CH2)3-, -(CH2)4-, -(CH2)5-, -(CH2)6-, -Ph-, -(Ph)2-, and -(Ph)3-. This further eliminates interface defects in the perovskite layer and improves photoelectric performance.

[0019] In some embodiments of the present invention, R1 independently includes any one of -CH2-, -(CH2)2-, -(CH2)3-, and -(CH2)4-. This further eliminates interface defects in the perovskite layer and improves photoelectric performance.

[0020] In some embodiments of the present invention, the substituents in the substituted aryl and substituted alkyl groups independently include one or more of halogens, sulfur, hydroxyl groups, carboxyl groups, sulfonic acid groups, and amino groups. Thus, suitable substituents can control the wettability of the hole transport layer, facilitating the coating of its upper film layers. Furthermore, the selection of substituents can further eliminate interface defects in the perovskite layer and improve photoelectric performance.

[0021] In some embodiments of the present invention, R2 and R4 each independently include any one of the following: empty, H, -CH3, -CH2CH3, -CH2CH2CH3, and -Ph. Therefore, by selecting appropriate R2 and R4, the smoothness of the interface between the hole transport layer and the perovskite layer can be improved, optimizing the interface contact and further eliminating interface defects in the perovskite layer, thereby enhancing photoelectric performance.

[0022] In some embodiments of the present invention, R3 and R5 each independently include any one of the following: empty, H, -CH3, -CH2CH3, -CH2CH2CH3, -OH, and -Ph. Therefore, by selecting appropriate R3 and R5, the smoothness of the interface between the hole transport layer and the perovskite layer can be improved, optimizing the interface contact and further eliminating interface defects in the perovskite layer, thereby enhancing photoelectric performance.

[0023] In some embodiments of the present invention, R2, R3, R4, and R5 each independently include any one of the following: empty, H, -CH3, -CH2CH3, and -Ph. This further eliminates interface defects in the perovskite layer and improves photoelectric performance.

[0024] In some embodiments of the present invention, the compound represented by Formula I includes one or more of the following:

[0025]

[0026] This can further eliminate interface defects in the perovskite layer and improve photoelectric performance.

[0027] In some embodiments of the present invention, the mass of the compound represented by Formula I is 1% to 25% based on the mass of the hole transport material in the hole transport layer.

[0028] In some embodiments of the present invention, the hole transport layer includes a first hole transport layer and a second hole transport layer; the second hole transport layer is disposed between the perovskite layer and the first hole transport layer; the first hole transport layer includes the hole transport material; and the second hole transport layer includes a compound represented by Formula I. This further eliminates interface defects in the perovskite layer and improves photoelectric performance.

[0029] In some embodiments of the present invention, the thickness of the first hole transport layer is 1-100 nm.

[0030] In some embodiments of the present invention, the thickness of the second hole transport layer is 0.1-2 nm.

[0031] In some embodiments of the present invention, the hole transport material includes one or more of the following: poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, poly-3-hexylthiazole, triphenylamine with a triphenylene core, 3,4-ethylenedioxythiazole-methoxytriphenylamine, N-(4-aniline)carbazole-spirobifluorene, poly(3,4-ethylenedioxythiazole):poly(styrenesulfonium), polythiazole, nickel oxide, molybdenum oxide, cuprous iodide, cuprous oxide, [2-(9H-carbazole-9-yl)ethyl]phosphonic acid, 2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid, and [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid.

[0032] In some embodiments of the present invention, the material of the perovskite layer has the general formula ABX3 or A2CDX6, wherein A includes one or more inorganic or organic monovalent cations, B includes one or more inorganic divalent cations, C includes one or more inorganic monovalent cations, D includes one or more inorganic trivalent cations, and X includes one or more monovalent anions.

[0033] The compound shown in Formula I, as a passivating material, possesses two electron-donating groups on both sides, exhibiting strong bond and electronic coordination energies. It can form Lewis acid-base coordination with uncoordinated inorganic divalent cations in perovskite, meaning the passivating material shares electron pairs with the defect sites, thus achieving passivation. Furthermore, the electron-donating groups on both sides can form hydrogen bonds with formamidinium ions, and hydrogen bonds can passivate both positively and negatively charged defects. Therefore, it can further eliminate interfacial defects in the perovskite layer and improve photoelectric performance.

[0034] A second aspect of the present invention provides a tandem battery, comprising: the aforementioned perovskite solar cell.

[0035] A third aspect of the present invention provides a photovoltaic module, comprising: the aforementioned perovskite solar cell.

[0036] A fourth aspect of the present invention provides a power generation device, comprising: the aforementioned perovskite solar cell.

[0037] A fifth aspect of the present invention provides an electrical device comprising: the aforementioned perovskite solar cell.

[0038] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0039] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0040] Figure 1 This is a schematic diagram of the structure of a perovskite solar cell according to an embodiment of the present invention;

[0041] Figure 2 This is a schematic diagram of the structure of a perovskite solar cell according to an embodiment of the present invention;

[0042] Figure 3 This is a schematic diagram of the structure of a perovskite solar cell according to an embodiment of the present invention;

[0043] Figure 4 This is a contact angle diagram of 2-(3,6-dimethoxy-9H-carbazole-9-yl)ethylphosphonic acid in Comparative Example 1 of the present invention;

[0044] Figure 5 This is a contact angle diagram of the passivating material and 2-(3,6-dimethoxy-9H-carbazole-9-yl)ethylphosphonic acid in Comparative Example 2 of the present invention;

[0045] Figure 6 This is a contact angle diagram of the passivating material and 2-(3,6-dimethoxy-9H-carbazole-9-yl)ethylphosphonic acid in Comparative Example 3 of the present invention;

[0046] Figure 7 This is a contact angle diagram of the passivating material and 2-(3,6-dimethoxy-9H-carbazole-9-yl)ethylphosphonic acid in Comparative Example 4 of the present invention;

[0047] Figure 8 This is a contact angle diagram of the passivating material and 2-(3,6-dimethoxy-9H-carbazole-9-yl)ethylphosphonic acid in Comparative Example 5 of the present invention;

[0048] Figure 9 This is a contact angle diagram of the passivation material and 2-(3,6-dimethoxy-9H-carbazole-9-yl)ethylphosphonic acid in Example 1 of the present invention;

[0049] Figure 10 This is a contact angle diagram of the passivation material and 2-(3,6-dimethoxy-9H-carbazole-9-yl)ethylphosphonic acid in Example 2 of the present invention;

[0050] Figure 11 This is a contact angle diagram of the passivation material and 2-(3,6-dimethoxy-9H-carbazole-9-yl)ethylphosphonic acid in Example 3 of the present invention;

[0051] Figure 12This is a contact angle diagram of the passivation material and 2-(3,6-dimethoxy-9H-carbazole-9-yl)ethylphosphonic acid in Example 4 of the present invention;

[0052] Figure 13 This is a contact angle diagram of the passivation material and 2-(3,6-dimethoxy-9H-carbazole-9-yl)ethylphosphonic acid in Example 5 of the present invention;

[0053] Figure 14 This is a schematic diagram of an electrical device using a perovskite solar cell as a power source according to an embodiment of the present invention.

[0054] Explanation of reference numerals in the attached figures:

[0055] 100 is a perovskite solar cell; 110 is the first electrode layer; 120 is the hole transport layer; 130 is the perovskite layer; 140 is the second electrode layer; 150 is the electron transport layer; 121 is the first hole transport layer; 122 is the second hole transport layer. Detailed Implementation

[0056] Hereinafter, embodiments of the perovskite solar cell and power-consuming device of the present invention will be specifically disclosed in detail with appropriate reference to the accompanying drawings. However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repetitive descriptions of practically identical structures may be omitted. This is to avoid unnecessarily lengthy descriptions and to facilitate understanding by those skilled in the art. Furthermore, the accompanying drawings and the following description are provided to enable those skilled in the art to fully understand the present invention and are not intended to limit the subject matter of the claims.

[0057] The "range" disclosed in this invention is defined by a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, which define the boundaries of the particular range. Ranges defined in this way can include or exclude endpoints and can be arbitrarily combined; that is, any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60-120 and 80-110 are listed for a specific parameter, it is understood that ranges of 60-110 and 80-120 are also expected. Furthermore, if minimum range values ​​1 and 2 are listed, and if maximum range values ​​3, 4, and 5 are listed, then the following ranges are all expected: 1-3, 1-4, 1-5, 2-3, 2-4, and 2-5. In this invention, unless otherwise stated, the numerical range "ab" represents a shortened representation of any combination of real numbers between a and b, where a and b are real numbers. For example, the numerical range "0-5" indicates that all real numbers between "0-5" have been listed in this article; "0-5" is simply a shortened representation of these numerical combinations. Furthermore, when a parameter is stated as an integer ≥2, it is equivalent to disclosing that the parameter is, for example, an integer such as 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0058] Unless otherwise specified, all embodiments and optional embodiments of the present invention can be combined with each other to form new technical solutions.

[0059] Unless otherwise specified, all technical features and optional technical features of this invention can be combined to form new technical solutions.

[0060] Unless otherwise specified, all steps of the present invention may be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or it may include steps (b) and (a) performed sequentially. For example, the mention that the method may also include step (c) indicates that step (c) may be added to the method in any order. For example, the method may include steps (a), (b), and (c), or it may include steps (a), (c), and (b), or it may include steps (c), (a), and (b), etc.

[0061] Perovskite materials possess advantages such as high absorption coefficient, tunable optical bandgap, low exciton binding energy, and long carrier diffusion distance. Using them as light-absorbing layers can not only reduce the manufacturing cost of solar cells but also provide excellent charge transport characteristics. However, perovskite solar cells are multifunctional layered structures, and problems such as energy level mismatch and severe nonradiative recombination exist between different functional layers, which restrict the improvement of perovskite cell performance. In particular, defects at the interface are prone to forming, and these defects can induce nonradiative recombination of charge carriers, further affecting the extraction and transport of charge carriers, and thus impacting the photoelectric performance of the device.

[0062] Therefore, this invention uses a compound with electron-donating groups on both sides as a passivation material to generate chemical bonds and / or chemical forces with cations in the perovskite layer, thereby reducing interface defects in the perovskite layer and improving the photoelectric performance of the battery.

[0063] The perovskite solar cell disclosed in this invention belongs to the category of photovoltaic cells. Furthermore, the perovskite solar cell disclosed in the embodiments of this invention can be used as a power source for electrical devices, or it can be assembled into a photovoltaic power generation system and store electrical energy in an energy storage system composed of energy storage batteries. Electrical devices can include lighting elements, display elements, mobile devices, etc., specifically including wearable devices, flexible electronic products, smart textiles, streetlights, signal lights, insect-killing lamps, electric fans, electric toys, power tools, electric vehicles, electric cars, ships, spacecraft, etc. Among these, electric toys can include stationary or mobile electric toys, such as game consoles, electric car toys, electric ship toys, and electric airplane toys, etc., and spacecraft can include airplanes, rockets, space shuttles, and spacecraft, etc.

[0064] The first aspect of this invention provides a perovskite solar cell, comprising:

[0065] First electrode layer;

[0066] A hole transport layer is disposed on one side of the first electrode layer;

[0067] The perovskite layer is located on the side of the hole transport layer opposite to the first electrode layer.

[0068] The second electrode layer is located on the side of the perovskite layer away from the hole transport layer.

[0069] The hole transport layer comprises the compound shown in Formula I and a hole transport material;

[0070]

[0071] In Formula I, A and B each independently include any one of N, P, O, or S;

[0072] R1 independently includes one or more of -(CH2)n1- or -(Ph)n2-;

[0073] n1 and n2 are each independent integers between 1 and 6;

[0074] R2 and R4 each independently include any one of empty, H, substituted or unsubstituted aryl, or substituted or unsubstituted alkyl;

[0075] R3 and R5 each independently include any one of empty, H, hydroxyl, substituted or unsubstituted aryl, or substituted or unsubstituted alkyl.

[0076] This invention uses a compound of Formula I with electron-donating groups on both sides as a passivation material for the lower interface of the perovskite layer. The electron-donating groups on both sides generate chemical bonds and / or chemical forces with the cations in the perovskite layer, reducing interface defects in the perovskite layer, optimizing interface contact, and thus improving the photoelectric performance of the battery.

[0077] In this invention, "-Ph-" represents a group formed after a benzene molecule (C6H6) loses two hydrogen atoms.

[0078] In some embodiments of the present invention, when A independently includes O or S, one of the two groups R2 and R3 is absent, and R2 or R3 is empty.

[0079] In some embodiments of the present invention, when B independently includes O or S, one of the two groups, R4 and R5, is absent, and R4 or R5 is empty.

[0080] As an example, n1 can be 1, 2, 3, 4, 5, or 6.

[0081] As an example, n2 can be 1, 2, 3, 4, 5, or 6.

[0082] In some embodiments of the present invention, n2 is independently any integer between 1 and 3. This further eliminates interface defects in the perovskite layer and improves photoelectric performance.

[0083] In some embodiments of the present invention, R1 independently includes any one of -CH2-, -(CH2)2-, -(CH2)3-, -(CH2)4-, -(CH2)5-, -(CH2)6-, -Ph-, -(Ph)2-, and -(Ph)3-. This further eliminates interface defects in the perovskite layer and improves photoelectric performance.

[0084] In some embodiments of the present invention, R1 independently includes any one of -CH2-, -(CH2)2-, -(CH2)3-, and -(CH2)4-. This further eliminates interface defects in the perovskite layer and improves photoelectric performance.

[0085] In some embodiments of the present invention, the substituents in the substituted aryl and substituted alkyl groups independently include one or more of halogen, S, hydroxyl, carboxyl, sulfonic acid, and amino groups. Thus, suitable substituents can control the wettability of the hole transport layer, facilitating the coating of its upper film layers. Furthermore, the selection of substituents can further eliminate interface defects in the perovskite layer and improve photoelectric performance.

[0086] In some embodiments of the present invention, the substituted phenyl groups include any one of chlorophenyl, bromophenyl, iodophenyl, phenoxy, phenylthio, -Ph-COOH, -Ph-SO3H, -Ph-NH2, and -Ph-N(R')2; R' independently comprises hydrogen or a hydrocarbon group with 1-5 carbon atoms. This further eliminates interface defects in the perovskite layer and improves photoelectric performance.

[0087] As an example, chlorophenyl can include

[0088] Any one of the above groups; the short solid lines in the above groups indicate the extraction sites.

[0089] In some embodiments of the present invention, R2 and R4 each independently include any one of the following: empty, H, -CH3, -CH2CH3, -CH2CH2CH3, and -Ph. Therefore, by selecting appropriate R2 and R4, the smoothness of the interface between the hole transport layer and the perovskite layer can be improved, optimizing the interface contact and further eliminating interface defects in the perovskite layer, thereby enhancing photoelectric performance.

[0090] In some embodiments of the present invention, R3 and R5 each independently include any one of the following: empty, H, -CH3, -CH2CH3, -CH2CH2CH3, -OH, and -Ph. Therefore, by selecting appropriate R3 and R5, the smoothness of the interface between the hole transport layer and the perovskite layer can be improved, optimizing the interface contact and further eliminating interface defects in the perovskite layer, thereby enhancing photoelectric performance.

[0091] In some embodiments of the present invention, R2, R3, R4, and R5 each independently include any one of the following: empty, H, -CH3, -CH2CH3, and -Ph. Therefore, by selecting appropriate R2, R3, R4, and R5, the smoothness of the interface between the hole transport layer and the perovskite layer can be improved, optimizing the interface contact and further eliminating interface defects in the perovskite layer, thereby enhancing photoelectric performance.

[0092] In some embodiments of the present invention, the compound represented by Formula I includes one or more of the following:

[0093] 2-N',N'-dimethyl-diphenylphosphine, with the structural formula as follows:

[0094] N-Ethyl-N',N'-dimethyl-N-phenylethylenediamine, with the structural formula:

[0095] 4-(dimethylamino)triphenylphosphine, with the structural formula:

[0096] N-(2-methoxyethyl)aniline, with the structural formula:

[0097] 2-Methaneoxyethylphenyl sulfide, with the structural formula:

[0098] This allows for the further elimination of interface defects in the perovskite layer, thereby improving photoelectric properties. The elemental composition of the above compounds was determined using X-ray photoelectron spectroscopy (XPS).

[0099] In some embodiments of the present invention, the mass of the compound represented by Formula I is 1% to 25% based on the mass of the hole transport material in the hole transport layer. The percentage of the compound represented by Formula I can be measured using nuclear magnetic resonance (NMR) or infrared spectroscopy. Specifically, the hole transport layer is separated from the perovskite solar cell, and nuclear magnetic resonance (NMR) is used to measure the percentage of the hole transport material in the perovskite solar cell. 1 H-NMR), carbon NMR ( 13 The perovskite layer can be characterized by C-NMR or infrared spectroscopy (IR) to determine the carbon, hydrogen, oxygen, nitrogen and other elemental composition of the compound represented by Formula I.

[0100] In some embodiments of the present invention, the perovskite solar cell 100 of the present invention, with reference to... Figure 1 It includes a first electrode layer 110, a hole transport layer 120, a perovskite layer 130, and a second electrode layer 140.

[0101] In some embodiments of the present invention, the hole transport layer includes a first hole transport layer and a second hole transport layer; the second hole transport layer is disposed between the perovskite layer and the first hole transport layer; the first hole transport layer includes a hole transport material; and the second hole transport layer includes a compound represented by Formula I. This further eliminates interface defects in the perovskite layer and improves photoelectric performance.

[0102] In some embodiments of the present invention, the perovskite solar cell 100 of the present invention, with reference to... Figure 2It includes a first electrode layer 110, a first hole transport layer 121, a second hole transport layer 122, a perovskite layer 130, and a second electrode layer 140.

[0103] In some embodiments of the present invention, the thickness of the first hole transport layer 121 is 1-100 nm. As an example, the thickness of the first hole transport layer can be 1, 2, 3, 4, 5, 10, 20, 30, 40, 50, 60, 70, 80, 90, or 100 nm, or a range of any of the above values. The thickness is measured using a white light interferometer.

[0104] In some embodiments of the present invention, the thickness of the second hole transport layer 122 is 0.1-2 nm. As an example, the thickness of the second hole transport layer 122 can be 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1, 1.5, or 2 nm. The thickness is measured using an ellipsometer.

[0105] In some embodiments of the present invention, the hole transport material includes poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), poly-3-hexylthiazole (P3HT), triphenylamine with a triphenylene core (H101), 3,4-ethylenedioxythiazole-methoxytriphenylamine (EDOT-OMeTPA), and N-(4-aniline)carbazole-spirobifluorene (CzPAF-SBF). The materials are selected from one or more of the following: poly(3,4-ethylenedioxythiazole), poly(styrene sulfonate) (PEDOT:PSS), polythiazole, nickel oxide (NiOx), molybdenum oxide (MoO3), cuprous iodide (CuI), cuprous oxide (CuO), [2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz), 2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz), and [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz). XPS testing was used to test the materials.

[0106] In some embodiments of the present invention, the thickness of the perovskite layer is 200-2000 nm. As an example, the thickness of the perovskite layer can be 200, 250, 300, 350, 400, 450, 500, 550, 600, 650, 700, 750, 800, 850, 900, 950, 1000, 1200, 1500, 1600, 1800, or 2000 nm, or a range of any of the above values. Reference Figure 1 The thickness of the perovskite layer is 130 mm. The thickness was measured using a profilometer.

[0107] In some embodiments of the present invention, the perovskite material has the general formula ABX3 or A2CDX6, wherein A comprises one or more inorganic or organic monovalent cations, B comprises one or more inorganic divalent cations, C comprises one or more inorganic monovalent cations, D comprises one or more inorganic trivalent cations, and X comprises one or more monovalent anions. This can further improve the photoelectric conversion efficiency and stability of perovskite solar cells. The perovskite material is tested using X-ray photoelectron spectroscopy (XPS).

[0108] For example, organic monovalent cations include (NR) a R b R c R d ) + 、(R a R b N=CR c R d ) + 、(R a R b NC(R e ) = NR c R d ) + and (R) a R b NC(NR e R f ) = NR c R d ) + One or more of them, wherein R a R b R c R d R e and R f Each independently includes H, substituted or unsubstituted C1 to C2. 20 Alkyl, or substituted or unsubstituted aryl groups. Optionally, the organic monovalent cation includes (H₂N=CH-NH₂). + (abbreviated as FA), CH3NH3 + (abbreviated as MA), one or more of the following: ethylamine cation, propylamine cation, butylamine cation, pentamine cation, hexamine cation, and imidazole cation.

[0109] For example, the inorganic monovalent cation includes: Li + Na + K + 、Rb + Cs + Cu + Ag + Au+ or Hg + One or more of them.

[0110] For example, the inorganic divalent cation includes: Pb 2+ Sn 2+ Be 2+、 Mg 2+ Ca 2+ 、Sr 2+ Ba 2+ Zn 2+ 、Ge 2+ Fe 2 + Co 2+ Ni 2+ Cd 2+ Cu 2+ Mn 2+ Pd 2+ Yb 2+ Or Eu 2+ One or more of them, and may further include Pb 2+ Sn 2+ One or two of them.

[0111] The compound shown in Formula I reacts with divalent cations (such as Pb) in the perovskite layer. 2+ It has a certain coordination effect, and the passivating material and the defect site share electron pairs, thereby playing a passivating role.

[0112] For example, inorganic trivalent cations include: Bi 3+ Sb 3+ Cr 3+ Fe 3+ Co 3+ Ga 3+ As 3+ Ru 3+ ,Rh 3+ In 3+ Ir 3+ Ni 3+ Au 3+ Or Al 3+ One or more of them.

[0113] For example, monovalent anions include: F - Cl - ,Br - I - SCN - CNO - OCN - OSCN - SH - CN -SeCN - One or more of them, and may further include Cl - ,Br - I - One or more of them.

[0114] In some embodiments of the present invention, the first electrode layer comprises a transparent conductive oxide. Exemplarily, the transparent conductive oxide includes one or more of fluorine-doped tin oxide (FTO), indium tin oxide (ITO), tungsten-doped indium oxide (IWO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), or indium zinc oxide (IZO). In some embodiments, the thickness of the first electrode layer is 10 nm to 1000 nm. As an example, the thickness of the first electrode layer can be 10 nm, 50 nm, 100 nm, 150 nm, 200 nm, 300 nm, 400 nm, 500 nm, 650 nm, 700 nm, 800 nm, 850 nm, 900 nm, 1000 nm, or a range of any of the above values.

[0115] In some embodiments of the present invention, the thickness of the second electrode layer is 10-1000 nm. Controlling the thickness of the second electrode layer can efficiently collect charge carriers and optimize charge transport efficiency. As an example, the thickness of the second electrode layer can be 10, 20, 30, 40, 50, 60, 70, 80, 90, 100, 150, 200, 250, 300, 350, 400, 450, 500, 550, 600, 650, 700, 750, 800, 850, 900, 950, or 1000 nm, or a range of any of the above values. The thickness is measured using a profilometer. (Reference) Figure 1 The thickness of the second electrode layer is the same as that of the second electrode layer 140.

[0116] In some embodiments of the present invention, the electrode material of the second electrode layer includes one or more of transparent conductive oxides, metals and their alloys, elemental carbon materials, and organic conductive materials. Exemplarily, the transparent conductive oxide includes one or more of indium tin oxide (ITO), lanthanide-doped indium oxide, fluorine-doped tin oxide (FTO), antimony-doped tin oxide, boron-doped zinc oxide (BZO), zinc aluminum oxide (AZO), indium zinc oxide (IZO), zinc gallium oxide (GZO), and indium tungsten oxide (IWO). Exemplarily, the metals and their alloys include one or more of Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, Mo, W, and their alloys, and the elemental carbon materials include one or more of graphite, graphene, and carbon nanotubes. Exemplarily, the organic conductive material includes at least one of poly(3,4-ethylenedioxythiophene), polythiophene, and polyacetylene. The materials are tested using XPS.

[0117] In some embodiments of the present invention, the materials of the first electrode layer and the second electrode layer can be the same material or different materials, and at least one of them is a transparent electrode.

[0118] In some embodiments of the present invention, the solar cell includes a first electrode layer, a hole transport layer, a perovskite layer, and a second electrode layer stacked sequentially. Generally, light is incident from the first electrode layer to excite the perovskite layer to generate a photocurrent, and the resulting solar cell is a reverse solar cell (pin).

[0119] In some embodiments of the present invention, the solar cell includes a first electrode layer, a perovskite layer, a hole transport layer, and a second electrode layer stacked sequentially. Generally, light is incident from the first electrode layer to excite the perovskite layer to generate a photocurrent, and the resulting solar cell is a formal solar cell (nip).

[0120] In some embodiments of the present invention, the perovskite solar cell further includes an electron transport layer disposed between the perovskite layer and the second electrode layer. The electron transport layer helps to improve the extraction and transport of electrons generated after the perovskite layer absorbs photons. The electron transport layer transports electrons to the corresponding second electrode layer to draw out the current.

[0121] In some embodiments of the present invention, the perovskite solar cell 100 of the present invention, with reference to... Figure 3 It includes a first electrode layer 110, a first hole transport layer 121, a second hole transport layer 122, a perovskite layer 130, an electron transport layer 150, and a second electrode layer 140.

[0122] In some embodiments of the present invention, the thickness of the electron transport layer 150 is 1-100 nm. As an example, the thickness of the electron transport layer can be 1, 2, 3, 4, 5, 10, 20, 30, 40, 50, 60, 70, 80, 90, or 100 nm, or a range of any of the above values. The thickness is measured using a white light interferometer.

[0123] In some embodiments of the present invention, the present invention does not specifically limit the electron transport material used in the electron transport layer, and can use electron transport materials commonly used in the art. For example, the electron transport material includes at least one of imide compounds, quinone compounds, fullerenes and their derivatives, metal oxides, semiconductor material oxides, titanates, fluorides and their derivatives, and materials obtained by doping or passivation. Exemplarily, the imide compound includes at least one of phthalimide, succinimide, N-bromosuccinimide, glutarimide, or maleimide. Exemplarily, the quinone compound includes at least one of benzoquinone, naphthoquinone, phenanthrenequinone, or anthraquinone. Exemplarily, the fullerene and its derivatives include fullerene C 60 Fullerene C 70 PC 61 BM([6,6]-phenyl-C 61 methyl butyrate), [6,6]-phenyl C 71 Methyl butyrate (PC) 71 At least one of BM. Exemplarily, the metal element in the metal oxide includes at least one of Mg, Cd, Zn, In, Pb, W, Sb, Bi, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga, and Cr; optionally, the metal oxide includes at least one of tin dioxide (SnO2) and zinc oxide (ZnO). Exemplarily, the semiconductor material oxide includes silicon oxide. Exemplarily, the titanate includes at least one of strontium titanate and calcium titanate. Exemplarily, the fluoride includes at least one of lithium fluoride and calcium fluoride.

[0124] In some embodiments of the present invention, the solar cell further includes a hole-blocking layer disposed between the electron transport layer and the corresponding electrode or interconnect layer. The hole-blocking layer improves both electron extraction and hole blocking performance. The hole-blocking layer comprises a hole-blocking material. In some embodiments, the hole-blocking layer comprises a hole-blocking material. The present invention does not particularly limit the hole-blocking material, which may include at least one of SnOx (1.5 ≤ x ≤ 2) and copper hydroxide (2,9-dimethyl-4,7-biphenyl-1,10-o-phenanthroline, BCP).

[0125] This invention does not impose a particular limitation on the thickness of the hole blocking layer; a thickness commonly used in the art for hole blocking layers can be adopted. For example, the thickness of the hole blocking layer can be from 0.5 nm to 25 nm. As an example, the thickness of the blocking layer can be 0.5, 0.6, 0.7, 0.8, 0.9, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, or 25 nm, or a range of any of the above values.

[0126] In some embodiments of the present invention, the perovskite solar cell further includes a substrate disposed away from the hole transport layer of the first electrode layer.

[0127] In some embodiments of the present invention, the substrate may include glass or a flexible material.

[0128] In some embodiments of the present invention, the thickness of the substrate is 0.1-3 mm. As an example, the thickness of the substrate can be 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1, 1.5, 2, 2.2, 2.5 or 3 mm.

[0129] In some embodiments of the present invention, the flexible material may include, but is not limited to, organic polymer materials, and may further be a mixture of one or more of the following materials in different proportions: including but not limited to polyvinyl alcohol (PVA), polyester (PET), polyimide (PI), polyethylene naphthalate (PEN), polydimethylsiloxane (PDMS), polymethyl methacrylate (PMMA), polycarbonate (PC), polystyrene (PS), and polyvinyl chloride (PVC).

[0130] In some embodiments of the present invention, a method for preparing a perovskite solar cell includes:

[0131] S100: A hole transport layer is formed on one side of the first electrode layer; the hole transport layer includes the compound shown in Formula I and the hole transport material.

[0132] In some embodiments of the present invention, the compound represented by Formula I and a hole transport material are composited on the surface of the first electrode layer to form a hole transport layer.

[0133] In some embodiments of the present invention, the compound shown in Formula I and the hole transport material are mixed and then composited on the surface of the first electrode layer to form a hole transport layer; the mass ratio of the hole transport material to the compound shown in Formula I is 100:(1-25).

[0134] In this invention, the composite may include mechanical composite, such as at least one of solution spin coating, vapor deposition, scalpel coating, heteroepitaxial growth, ultrasonic spraying, hot pressing, roll-to-roll printing, slot coating, inkjet printing, or lamination.

[0135] In some other embodiments of the present invention, the hole transport layer can be formed by solution method; in the solution, the concentration of the hole transport material is 1 to 2 mg / mL, and the concentration of the compound represented by Formula I is 0.1 to 0.6 mg / mL.

[0136] In some embodiments of the present invention, the perovskite solar cell 100 of the present invention, with reference to... Figure 2 It includes a first electrode layer 110, a first hole transport layer 121, a second hole transport layer 122, a perovskite layer 130, and a second electrode layer 140.

[0137] In some other embodiments of the present invention, forming a hole transport layer on one side of the first electrode layer specifically includes:

[0138] A hole transport material is disposed on one side of the first electrode layer 110 to form a first hole transport layer 121, and a compound of Formula I is disposed on the side of the first hole transport layer 121 away from the first electrode layer to form a second hole transport layer 122.

[0139] In some other embodiments of the present invention, the second hole transport layer can be formed by a solution method; in the solution, the concentration of the hole transport material is 1 to 2 mg / ml.

[0140] In some other embodiments of the present invention, the second hole transport layer can be formed by a solution method; in the solution, the concentration of the compound represented by Formula I is 0.1 to 0.6 mg / ml.

[0141] S200: A perovskite layer is formed on the side of the hole transport layer away from the first electrode layer.

[0142] In some embodiments of the present invention, a perovskite layer can be formed by a perovskite precursor solution; the perovskite layer can be prepared by spin coating, vapor deposition, blade coating, spraying or slot coating.

[0143] S300: A second electrode layer is formed on the side of the perovskite layer away from the hole transport layer.

[0144] In some embodiments of the present invention, the second electrode layer can be formed by vacuum evaporation.

[0145] In some embodiments of the present invention, the perovskite solar cell further includes an electron transport layer disposed between the perovskite layer and the second electrode layer.

[0146] In some embodiments of the present invention, the method for fabricating a perovskite solar cell further includes: forming an electron transport layer on the side of the perovskite layer away from the hole transport layer; and forming a second electrode layer on the side of the electron transport layer away from the perovskite layer.

[0147] In some embodiments of the present invention, the electron transport layer can be formed by thermal evaporation.

[0148] In some embodiments of the present invention, the perovskite solar cell further includes a hole blocking layer disposed between the second electrode layer and the electron transport layer.

[0149] In some embodiments of the present invention, a hole-blocking layer can be formed by thermal evaporation or atomic layer deposition.

[0150] In some embodiments of the present invention, the method for fabricating a perovskite solar cell further includes: forming a hole blocking layer on the side of the electron transport layer away from the perovskite layer; and forming a second electrode layer on the side of the hole blocking layer away from the electron transport layer.

[0151] A second aspect of the present invention provides a tandem solar cell, comprising: a perovskite solar cell. Therefore, the tandem solar cell exhibits good long-term stability and a long service life.

[0152] In one embodiment, the tandem solar cell further includes a light-absorbing layer with a different bandgap than the perovskite layer. Thus, the light-absorbing layer and the perovskite layer can improve light utilization efficiency and enhance the performance of the solar cell by absorbing light of different wavelengths. In some embodiments, the light-absorbing layer can be one or more of a perovskite light-absorbing layer, a crystalline silicon light-absorbing layer, a cadmium telluride light-absorbing layer, a copper indium gallium selenide light-absorbing layer, or a polycrystalline silicon light-absorbing layer. If the light-absorbing layer is a perovskite layer, the resulting solar cell is a fully perovskite tandem solar cell; if the light-absorbing layer is a crystalline silicon light-absorbing layer, the resulting solar cell is a silicon-calcium tandem solar cell. No limitation is imposed here.

[0153] In some implementations, the position of the light-absorbing layer can be adjusted according to actual conditions. For example, it can be set to be insulated from the perovskite solar cell to form a mechanically stacked solar cell. As a further example, the structure of the mechanically stacked solar cell may include a first electrode layer, a hole transport layer, a perovskite layer, an electron transport layer, a second electrode layer, a transparent insulating layer, a third electrode layer, a third carrier transport layer, a light-absorbing layer, a fourth carrier transport layer, and a fourth electrode layer stacked sequentially. The third carrier transport layer is one of the electron transport layer and the hole transport layer, and the fourth carrier transport layer is the other of the electron transport layer and the hole transport layer. The material selection for the electron transport layer or the hole transport layer is as described above and will not be repeated here. The second and third electrode layers are made of transparent conductive oxide, which facilitates light transmission. Thus, the transparent insulating layer isolates the two cell units in the circuit. Each cell unit has two electrodes, for a total of four electrodes. The circuits of the two cell units are independent of each other, forming a four-terminal stacked solar cell.

[0154] In some implementations, the position of the light-absorbing layer can be adjusted according to actual conditions, such as placing it between perovskite solar cells to form a tandem solar cell. As a further example, the structure of a tandem solar cell may include a first electrode layer, a hole transport layer, a perovskite layer, an electron transport layer, a recombination layer, a hole transport layer, a light-absorbing layer, an electron transport layer, and a second electrode layer stacked sequentially. The material selection for the electron transport layer or hole transport layer is as described above and will not be repeated here. The recombination layer is used to connect the cell units on both sides. Specifically, electrons from the perovskite layer and electrons from the light-absorbing layer recombine and annihilate in the recombination layer, thereby achieving the circuit connection between the two cell units. The resulting tandem solar cell is simple to fabricate; the top cell can be directly deposited on the bottom cell to form a single, complete cell with two electrodes, forming a two-end tandem solar cell.

[0155] In some embodiments, the composite layer is made of one or more of metallic materials, transparent conductive oxides, and carbon materials. Further, the transparent conductive oxide layer comprises, but is not limited to, one or more of fluorine-doped tin oxide (FTO), indium tin oxide (ITO), zinc aluminum oxide (AZO), boron-doped zinc oxide (BZO), indium zinc oxide (IZO), indium tungsten oxide (IWO), indium gallium zinc oxide (IGZO), and antimony tin oxide (ATO). Further, the metallic materials include, but are not limited to, one or more of gold, copper, silver, platinum, aluminum, and iron. Further, the carbon materials include one or more of graphite, graphene, and carbon nanotubes.

[0156] A third aspect of this invention provides a photovoltaic module, comprising: a perovskite solar cell. Therefore, this photovoltaic module exhibits good long-term stability and a long service life.

[0157] A fourth aspect of the present invention provides a power generation device, comprising: a perovskite solar cell. Therefore, the power generation device exhibits good long-term stability and a long service life.

[0158] A photovoltaic (PV) power generation system refers to a system that directly converts solar radiation energy into electrical energy using the photovoltaic effect. It is divided into stand-alone PV systems and grid-connected PV systems. A stand-alone PV system consists of a solar photovoltaic array composed of photovoltaic modules, a battery bank, a charge controller, a power electronic converter (inverter), and loads. A grid-connected PV system consists of a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter), and a system monitoring system. PV power generation systems can include large-scale ground-mounted PV systems, distributed PV systems, and building-integrated photovoltaic (BIPV) systems.

[0159] A fifth aspect of the present invention provides an electrical device comprising a perovskite solar cell. Therefore, the electrical device exhibits good long-term stability and a long service life.

[0160] Electrical devices can include lighting elements, display elements, mobile devices, etc. Specifically, they can include streetlights, signal lights, insect-killing lamps, electric fans, electric toys, power tools, electric vehicles, electric cars, ships, spacecraft, etc. Among them, electric toys can include stationary or mobile electric toys, such as game consoles, electric car toys, electric ship toys, and electric airplane toys, etc. Spacecraft can include airplanes, rockets, space shuttles, and spacecraft, etc.

[0161] According to some embodiments of the present invention, Figure 14 This is an example of an electrical device. The electrical device could be a pure electric vehicle, a hybrid electric vehicle, or a plug-in hybrid electric vehicle, etc.

[0162] In this invention, the term "electron-donating group" refers to a group that can donate electrons to other parts of a molecule.

[0163] In this invention, the term "substitution" refers to the replacement of one or more hydrogen atoms on a specified atom by a group selected from those indicated, provided that the substitution does not exceed the normal valence of the specified atom under its existing condition, and that the substitution produces a stable compound. Substituents and / or variables can be combined, as long as such combinations produce a stable compound.

[0164] In this invention, the term "halogen" refers to fluorine (F), chlorine (Cl), bromine (Br), and iodine (I).

[0165] In this invention, the term "alkyl" refers to a straight-chain or branched aliphatic hydrocarbon group. In this invention, alkyl groups include (but are not limited to) methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, n-hexyl, etc.

[0166] In this invention, the term "each independently" or "independently" means that at least two groups (or ring systems) in the structure with the same or similar value ranges can have the same or different meanings under specific circumstances. For example, if substituent 1 and substituent 2 are each independently hydrogen, halogen, hydroxyl, cyano, alkyl, or aryl, then when substituent 1 is hydrogen, substituent 2 can be hydrogen, halogen, hydroxyl, cyano, alkyl, or aryl; similarly, when substituent 2 is hydrogen, substituent 1 can be hydrogen, halogen, hydroxyl, cyano, alkyl, or aryl.

[0167] The term "aryl" refers to a monocyclic or fused polycyclic aromatic hydrocarbon group having a conjugated π-electron system; correspondingly, "C6-C10 aryl" refers to an aryl group containing 6 to 10 cyclic carbon atoms in its structure. For example, C6-C10 aryl groups can include any one of phenyl, indenyl, or naphthyl.

[0168] The present invention will be described below through specific embodiments. It should be noted that these embodiments are for illustrative purposes only and should not be considered as limiting the scope of the invention. Where specific techniques or conditions are not specified in the embodiments, they are performed according to the techniques or conditions described in the literature in this field or according to the product instructions. Reagents or instruments whose manufacturers are not specified are all commercially available conventional products.

[0169] Example 1

[0170] The perovskite solar cell of this embodiment is fabricated using the following steps:

[0171] 1) Preparation of substrate and first electrode layer: Cleaning of FTO conductive glass (glass thickness 2.2 mm, FTO conductive layer thickness 350 nm): The FTO conductive glass was placed in an ultrasonic cleaner and cleaned for 20 min each with surfactant decon90, deionized water, isopropanol, and anhydrous ethanol. Subsequently, it was dried in a 70°C oven for 5 min. The FTO conductive glass was then treated with a UV-O3 cleaner under a fume hood for 20 min and cooled to room temperature. The surfactant decon90 consisted of anionic and nonionic surfactants, stabilizers, nonphosphonate detergent builders, alkali, and chelating agents.

[0172] 2) Preparation of the first hole transport layer: Weigh 3 mg of 2-(3,6-dimethoxy-9H-carbazole-9-yl)ethylphosphonic acid (MeO-2PACz) as the hole transport layer, disperse it in 3 mL of isopropanol, and shake for 120 min until MeO-2PACz is completely dissolved. Take 150 μL of the resulting dispersion (concentration 1 mg / mL) and spin-coat it onto the first electrode layer at 4000 rpm / s for 25 s using a spin coater. After spin-coating, place it on a hot plate and anneal at 120 °C for 20 min, then allow it to cool naturally to room temperature to form a first hole transport layer with a thickness of 2 nm.

[0173] 3) Preparation of the second hole transport layer: Weigh 1 mmol of 2-N',N'-dimethyl-diphenylphosphine as a passivation material, disperse it in 1 mL of isopropanol, and shake for 30 min until the lower interface solution is completely dissolved to obtain a dispersion (concentration of 0.257 mg / mL). Take 80 μL of the dispersion and spin-coat it onto a MeO-2PACz substrate at 5000 rpm / s for 30 s using a spin coater. After spin-coating, place it on a hot plate and anneal at 110 °C for 5 min, then allow it to cool naturally to room temperature to form a second hole transport layer with a thickness of 1 nm.

[0174] 4) Preparation of the perovskite layer: 496.32 mg formamidinium hydroiodate (FAI), 2.05 mg methylamine iodide (MAI), 4.87 mg methylammonium bromide (MABr), 40.27 mg cesium iodide (CsI), 25.69 mg lead bromide (PbBr2), and 1396.86 mg lead iodide (PbI2) were dissolved in 2 mL of a mixture of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) (DMF to DMSO volume ratio 4:1) to obtain a perovskite precursor solution. The solution was then shaken in the dark for 5 h. After shaking, impurities in the precursor solution were removed using a filter head (25 mm diameter needle filter, 0.22 μm mesh size). 150 mL of the perovskite precursor solution was spin-coated onto the second hole transport layer at 5000 rpm for 45 s. Ten seconds before the end of spin coating, 200 mL of chlorobenzene was rapidly added dropwise to regulate perovskite crystallization. After spin coating, the mixture was annealed at 150 °C for 20 min to form a perovskite layer with a structure of (FA). 0.98 MA 0.02 ) 0.95 Cs 0.05 Pb(I 0.98 Br 0.02 )3, with a thickness of 550nm.

[0175] 5) Preparation of electron transport layer: 40 mg of methyl [6,6]-phenyl-C61-butyrate (PC) was added. 61 BM was dissolved in 2 mL of chlorobenzene to prepare 2 mL of PC with a concentration of 20 mg / mL. 61 BM chlorobenzene solution. Take 90 μL of PC. 61 BM solution was spin-coated onto the perovskite layer at a speed of 4000 rpm for 30 s, followed by annealing at 100 °C for 10 min to form an electron transport layer with a thickness of 30 nm on the perovskite layer.

[0176] 6) Fabrication of a hole-blocking layer: Tin oxide (ALD SnO) is deposited on the electron transport layer via atomic layer deposition. XA 25 nm thick tin oxide hole-blocking layer was prepared using a method that employed tetra(dimethylamino)tin and deionized water as reaction sources, a deposition temperature of 100 °C, and pulse purge times of 120 MS / 5 s for the Sn source and 100 MS / 5 s for the H2O source.

[0177] 7) Fabrication of the second electrode layer: A 140 nm thick layer of metallic copper (Cu) is deposited on the hole-blocking layer as the first electrode. Before deposition, a vacuum of 1.0 × 10⁻⁶ is first applied. -4 Pa, then pre-deposited for 5 minutes. During the deposition process, when the copper thickness was in the 0-20 nm range, the Cu evaporation rate was approximately 0.5 A / s; when the copper thickness was in the 20 nm-140 nm range, the Cu evaporation rate was approximately 6 A / s, resulting in a second electrode layer with a thickness of 140 nm.

[0178] Example 2

[0179] The perovskite solar cell of this embodiment was prepared according to the method in Example 1. The difference from Example 1 is that the passivation material in step 3) is replaced with 1 mmol of N-ethyl-N',N'-dimethyl-N-phenylethylenediamine (concentration of 0.192 mg / mL); the remaining parameters and steps are the same as those in Example 1.

[0180] Example 3

[0181] The perovskite solar cell of this embodiment was prepared according to the method in Example 1. The difference from Example 1 is that the passivation material in step 3) is replaced with 1 mmol of N-(2-methoxyethyl)aniline (concentration of 0.151 mg / mL); the remaining parameters and steps are the same as those in Example 1.

[0182] Example 4:

[0183] The perovskite solar cell of this embodiment was prepared according to the method in Example 1. The difference from Example 1 is that the passivation material in step 3) is replaced with 1 mmol of 4-(dimethylamino)triphenylphosphine (concentration of 0.305 mg / mL); the remaining parameters and steps are the same as those in Example 1.

[0184] Example 5:

[0185] The perovskite solar cell of this embodiment was prepared according to the method in Example 1. The difference from Example 1 is that the passivation material in step 3) is replaced with 1 mmol of 2-methaneoxyethylphenyl sulfide (concentration of 0.168 mg / mL); the remaining parameters and steps are the same as those in Example 1.

[0186] Example 6:

[0187] The perovskite solar cell of this embodiment is fabricated using the following steps:

[0188] 1) Preparation of substrate and first electrode layer: Cleaning of FTO conductive glass (glass thickness 2.2 mm, FTO conductive layer thickness 350 nm): The FTO conductive glass was placed in an ultrasonic cleaner and cleaned for 20 min each with surfactant decon90, deionized water, isopropanol, and anhydrous ethanol. Subsequently, it was dried in a 70°C oven for 5 min. The FTO conductive glass was then treated with a UV-O3 cleaner under a fume hood for 20 min and cooled to room temperature. Decon90 is a mixture of anionic and nonionic surfactants, stabilizers, nonphosphonate detergent builders, alkalis, and chelating agents.

[0189] 2) Preparation of the hole transport layer: Weigh 4 mg of 2-(3,6-dimethoxy-9H-carbazole-9-yl)ethylphosphonic acid (MeO-2PACz) and disperse it in 3 mL of isopropanol. Shake for 120 min until MeO-2PACz is completely dissolved (concentration 1.33 mg / mL). Weigh 1 mmol of 4-(dimethylamino)triphenylphosphine as a passivation material and disperse it in 1 mL of isopropanol. Shake for 60 min until the solution is completely dissolved to obtain a dispersion (concentration 0.305 mg / mL). Mix the MeO-2PACz solution and the 4-(dimethylamino)triphenylphosphine solution at a volume ratio of 3:1 and stir for 60 min to prepare a mixed solution. Take 150 μL of the obtained mixed solution and spin coat it on the conductive surface of the first electrode layer at 4000 rpm / s for 25 s using a spin coater. After spin coating, the material was placed on a hot plate and annealed at 120°C for 20 minutes, and then naturally cooled to room temperature to obtain a hole transport layer with a thickness of 2 nm.

[0190] 3) Preparation of the perovskite layer: 496.32 mg formamidinium hydroiodate (FAI), 2.05 mg methylamine iodide (MAI), 4.87 mg methylammonium bromide (MABr), 40.27 mg cesium iodide (CsI), 25.69 mg lead bromide (PbBr2), and 1396.86 mg lead iodide (PbI2) were dissolved in 2 mL of a mixture of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) (DMF to DMSO volume ratio 4:1) to obtain a perovskite precursor solution. The solution was then shaken in the dark for 5 h. After shaking, impurities in the precursor solution were removed using a filter head (25 mm diameter needle filter, 0.22 μm mesh size). 150 mL of the perovskite precursor solution was spin-coated onto the hole transport layer at 5000 rpm for 45 s. Ten seconds before the end of spin coating, 200 mL of chlorobenzene was rapidly added dropwise to regulate perovskite crystallization. After spin coating, the perovskite was annealed at 150 °C for 20 min to obtain a uniform, dense, smooth, and translucent perovskite layer with the structure (FA). 0.98 MA 0.02 ) 0.95 Cs 0.05 Pb(I 0.98 Br 0.02 )3, with a thickness of 550nm.

[0191] 4) Preparation of electron transport layer: 40 mg of [6,6]-phenyl-C 61 methyl butyrate (PC) 61 BM was dissolved in 2 mL of chlorobenzene to prepare 2 mL of PC with a concentration of 20 mg / mL. 61 BM chlorobenzene solution. Take 90 μL of PC. 61 BM solution was spin-coated onto the perovskite layer at a speed of 4000 rpm for 30 s, followed by annealing at 100 °C for 10 min to form an electron transport layer with a thickness of 30 nm on the perovskite layer.

[0192] 5) Fabrication of a hole-blocking layer: Tin oxide (ALD SnO) is deposited on the electron transport layer via atomic layer deposition. X A 25 nm thick tin oxide hole-blocking layer was prepared using a method that employed tetratetra(dimethylamino)tin and deionized water as reaction sources, with a deposition temperature of 100 °C and pulse purge times of 120 MS / 5 s for the Sn source and 100 MS / 5 s for the H2O source.

[0193] 6) Fabrication of the second electrode layer: A 140 nm thick layer of metallic copper (Cu) is deposited on the hole-blocking layer as the first electrode. Before deposition, a vacuum of 1.0 × 10⁻⁶ is first applied. -4Pa, then pre-deposited for 5 minutes. During the deposition process, when the copper thickness was in the 0-20 nm range, the Cu evaporation rate was approximately 0.5 A / s; when the copper thickness was in the 20 nm-140 nm range, the Cu evaporation rate was approximately 6 A / s, resulting in a second electrode layer with a thickness of 140 nm.

[0194] Example 7

[0195] The perovskite solar cell of this embodiment was prepared according to the method in Example 6. The difference from Example 6 is that the passivation material in step 2) is replaced with 1 mmol of 2-methaneoxyethylphenyl sulfide (concentration of 0.168 mg / mL); the remaining parameters and steps are the same as those in Example 6.

[0196] Comparative Example 1

[0197] The perovskite solar cell of this comparative example was prepared according to the method in Example 1. The difference between this comparative example and Example 1 is that step 3) is omitted, and the perovskite layer is prepared directly on the hole transport layer.

[0198] Comparative Example 2

[0199] The perovskite solar cell of this comparative example was prepared according to the method in Example 1. The difference from Example 1 is that the passivation material in this comparative example is 1 mmol of heptene; the other parameters and steps are the same as those in Example 1.

[0200] Comparative Example 3

[0201] The perovskite solar cell of this comparative example was prepared according to the method in Example 1. The difference between this comparative example and Example 1 is that the passivation material in this comparative example is 1 mmol of diphenylpropylphosphine; the other parameters and steps are the same as those in Example 1.

[0202] Comparative Example 4

[0203] The perovskite solar cell of this comparative example was prepared according to the method in Example 1. The difference from Example 1 is that the passivation material in this comparative example is 1 mmol of phenylethylamine; the other parameters and steps are the same as those in Example 1.

[0204] Comparative Example 5

[0205] The perovskite solar cell of this comparative example was prepared according to the method in Example 1. The difference between this comparative example and Example 1 is that the passivation material in this comparative example is 1 mmol of 4-aminobutane-1-phosphate; the other parameters and steps are the same as those in Example 1.

[0206] Test case

[0207] The perovskite solar cells obtained in Examples 1-7 and Comparative Examples 1-5 were tested, and the test procedures are shown below.

[0208] 1. Contact angle test

[0209] A contact angle measuring instrument, model CA200, from Guangdong Beidou Precision Instruments Co., Ltd., was used. The ambient temperature was 23℃ and the humidity was 55%. 150 μL of 2-(3,6-dimethoxy-9H-carbazole-9-yl)ethylphosphonic acid (MeO-2PACz) solution was spin-coated onto the conductive surface of FTO transparent conductive glass. After spin-coating, the glass was placed on a hot plate and annealed at 120℃ for 20 min, then allowed to cool naturally to room temperature. Subsequently, 80 μL of the passivation material solutions from Examples 1-7 and Comparative Examples 1-5 were dynamically spin-coated onto a MeO-2PACz substrate at 5000 rpm / s for 30 s using a spin coater. After spin-coating, the substrate was placed on a hot plate and annealed at 110°C for 5 min, then allowed to cool naturally to room temperature. Contact angle testing was then performed, specifically by adding 2 μL of distilled water to the surface of the mixed-thickness material. Contact angle photographs were taken during the wetting process using a dynamic contact angle method. The left and right contact angles of the liquid after wetting were calculated using a circle fitting method, and the average value of the two contact angles was calculated to obtain the final average contact angle. The test results are shown below. Figure 4-13 As can be seen from the figure, the contact angle of MeO-2PACz is around 81.0°. Using the Lewis base molecule with double-sided electron donors from this embodiment as a passivation material significantly reduces the contact angle, indicating that the passivation material interacts with the perovskite deposit, improving interfacial contact. This is beneficial for scale-up applications.

[0210] 2. Testing of photoelectric performance parameters

[0211] The JV curve was measured using a Keithley 2400 illuminometer under AM 1.5G illumination, calibrated with a certified standard silicon solar cell (SRC-0053, Enlitech) at a total irradiance of 100 mW·cm⁻¹. -2 The effective area of ​​the PSC is determined by the mask to be 0.0737 cm². 2 The photoelectric performance parameters of the battery were tested to obtain P. out P in V mpp J mpp Open circuit voltage (V) OC ), short-circuit current (J) SC The photoelectric conversion efficiency (PCE) is calculated based on the following formula:

[0212] FF = V OC ×J SC / (V mpp ×Jmpp );

[0213] PCE = P out / P in

[0214] =V OC ×J SC ×FF / P in ;

[0215] Among them, P out P in V mpp J mpp , , and FF represent the cell's operating output power, incident light power, maximum power point voltage, maximum power point current, and fill factor, respectively. The perovskite solar cell was tested under the above conditions, and the results are shown in Table 1.

[0216] Table 1

[0217]

[0218]

[0219] As can be seen from Table 1, the embodiments of the present invention use Lewis base molecules with double-sided electron donors as passivation materials, which reduces interface defects and thus reduces on-voltage loss, resulting in perovskite solar cells with high photoelectric conversion efficiency.

[0220] It should be noted that the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. Furthermore, in the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0221] For the sake of brevity, this article only discloses some specific numerical ranges. However, any lower limit can be combined with any upper limit to form an unspecified range; and any lower limit can be combined with other lower limits to form an unspecified range, just as any upper limit can be combined with any other upper limit to form an unspecified range. Furthermore, each individually disclosed point or single value can itself serve as a lower or upper limit and be combined with any other point or single value or with other lower or upper limits to form an unspecified range.

[0222] In the description of the embodiments of this invention, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0223] Those skilled in the art will understand that, in the method of a specific embodiment, the order in which the steps are written does not imply a strict execution order and does not constitute any limitation on the implementation process. The specific execution order of each step should be determined by its function and possible internal logic.

[0224] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention; the terms “comprising” and “having”, and any variations thereof, in the specification, claims, and foregoing description of the invention, are intended to cover non-exclusive inclusion.

[0225] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," "some implementations," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Furthermore, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples, without contradiction. Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present invention.

Claims

1. A perovskite solar cell, characterized in that, include: First electrode layer; A hole transport layer is disposed on one side of the first electrode layer; A perovskite layer is disposed on the side of the hole transport layer opposite to the first electrode layer; The second electrode layer is disposed on the side of the perovskite layer opposite to the hole transport layer. The hole transport layer comprises the compound shown in Formula I and a hole transport material; In Formula I, A and B each independently include any one of N, P, O, or S; R1 independently includes one or more of -(CH2)n1- or -(Ph)n2-; n1 and n2 are each independent integers between 1 and 6; R2 and R4 each independently include any one of empty, H, substituted or unsubstituted aryl, or substituted or unsubstituted alkyl; R3 and R5 each independently include any one of the following: empty, H, hydroxyl, substituted or unsubstituted aryl, or substituted or unsubstituted alkyl.

2. The perovskite solar cell according to claim 1, characterized in that, n2 is any integer between 1 and 3, independent of each other.

3. The perovskite solar cell according to claim 1, characterized in that, R1 independently includes any one of -CH2-, -(CH2)2-, -(CH2)3-, -(CH2)4-, -(CH2)5-, -(CH2)6-, -Ph-, -(Ph)2-, and -(Ph)3-.

4. The perovskite solar cell according to claim 3, characterized in that, R1 independently includes any one of -CH2-, -(CH2)2-, -(CH2)3-, and -(CH2)4-.

5. The perovskite solar cell according to claim 1, characterized in that, The substituents in the substituted aryl group and the substituted alkyl group independently include one or more of halogen, S, hydroxyl, carboxyl, sulfonic acid, and amino groups.

6. The perovskite solar cell according to claim 5, characterized in that, R2 and R4 each independently include any one of the following: empty, H, -CH3, -CH2CH3, -CH2CH2CH3, and -Ph; R3 and R5 each independently include any one of the following: air, H, -CH3, -CH2CH3, -CH2CH2CH3, -OH, -Ph.

7. The perovskite solar cell according to any one of claims 6, characterized in that, R2, R3, R4, and R5 each independently include any one of the following: empty, H, -CH3, -CH2CH3, and -Ph.

8. The perovskite solar cell according to claim 1, characterized in that, The compounds represented by Formula I include one or more of the following:

9. The perovskite solar cell according to claim 1, characterized in that, Based on the mass of the hole transport material in the hole transport layer, the mass of the compound shown in Formula I is 1% to 25%.

10. The perovskite solar cell according to any one of claims 1 to 8, characterized in that, The hole transport layer includes a first hole transport layer and a second hole transport layer; The second hole transport layer is disposed between the perovskite layer and the first hole transport layer; The first hole transport layer includes the hole transport material; The second hole transport layer comprises the compound shown in Formula I.

11. The perovskite solar cell according to claim 10, characterized in that, The thickness of the first hole transport layer is 1-100 nm; and / or, The thickness of the second hole transport layer is 0.1-2 nm.

12. The perovskite solar cell according to claim 10, characterized in that, The hole transport material includes one or more of the following: poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, poly-3-hexylthiazole, triphenylamine with a triphenylene core, 3,4-ethylenedioxythiazole-methoxytriphenylamine, N-(4-aniline)carbazole-spirobifluorene, poly(3,4-ethylenedioxythiazole):poly(styrenesulfonium), polythiazole, nickel oxide, molybdenum oxide, cuprous iodide, cuprous oxide, [2-(9H-carbazole-9-yl)ethyl]phosphonic acid, 2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid, and [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid.

13. The perovskite solar cell according to claim 1, characterized in that, The material of the perovskite layer has the general formula ABX3 or A2CDX6, wherein A includes one or more of inorganic or organic monovalent cations, B includes one or more inorganic divalent cations, C includes one or more inorganic monovalent cations, D includes one or more inorganic trivalent cations, and X includes one or more monovalent anions.

14. A stacked battery, characterized in that, include: The perovskite solar cell according to any one of claims 1 to 13.

15. A photovoltaic module, characterized in that, include: The perovskite solar cell according to any one of claims 1 to 13.

16. A power generation device, characterized in that, include: The perovskite solar cell according to any one of claims 1 to 13.

17. An electrical device, characterized in that, include: The perovskite solar cell according to any one of claims 1 to 13.

Images