Source circuit board with waveguide channel and integrated digital radio frequency circuitry

Abstract

An integrated digital RF circuit system includes: a substrate, the substrate including a substrate integrated waveguide, the substrate integrated waveguide including a waveguide width, a first plurality of vias and a second plurality of vias; and a source circuit board including a waveguide channel, wherein: the waveguide channel is at least partially positioned between the first plurality of vias and the second plurality of vias; the waveguide channel defines a channel length and a channel width; the channel length is greater than the channel width; and the channel length is greater than the waveguide width.

Description

Cross-references to related applications

[0001] This application claims priority to U.S. Provisional Application Serial No. 63 / 604254, filed November 30, 2023, pursuant to 35 USC §119, the contents of which are based and are incorporated herein by reference in their entirety. Technical Field

[0002] This disclosure generally relates to integrated digital radio frequency (“RF”) circuit systems and source circuit boards having waveguide channels, and to methods for manufacturing said RF circuit systems and source circuit boards. Background Technology

[0003] RF circuitry systems (e.g., RF transceivers) may ideally connect antenna packages (e.g., glass antenna packages) to circuit boards (e.g., printed circuit boards) with minimal electrical loss. However, a typical approach to constructing such RF circuitry systems to reduce electrical loss may involve using larger (and therefore more expensive) connectors to connect the antenna package and the circuit board of the RF circuitry system. However, in some cases, RF circuitry systems may also ideally reduce electrical loss while minimizing their size and manufacturing cost, and therefore, such a typical approach to reducing electrical loss may be undesirable.

[0004] RF circuitry systems often require attaching a circuit board and its antenna package by soldering the circuit board to the antenna package. However, requiring soldering these materials may reduce the amount of material available to form the circuit board, antenna package, and / or any component of either or both. Furthermore, soldering can cause differences in thermal expansion between the circuit board and the antenna package, which may increase the stress effects experienced by the resulting RF circuitry system. Additionally, attaching the circuit board and antenna package by soldering may require inserting one or more layers, such as redistribution layers, connectors, and / or jumpers, between the circuit board and the antenna package.

[0005] Therefore, an RF circuit system may be needed that minimizes electrical losses between the antenna package and the circuit board, while also minimizing the size and cost of manufacturing the RF circuit system. Furthermore, an RF circuit system may also be needed that can attach the antenna package or circuit board without soldering the antenna package to the circuit board and / or inserting layers therebetween. Summary of the Invention

[0006] According to a first embodiment A1, an integrated digital radio frequency (“RF”) circuit system may include: a first substrate, the first substrate including a first substrate integrated waveguide, the first substrate integrated waveguide including: a first waveguide length and a first waveguide width, a first plurality of vias disposed along the first waveguide length, wherein each of the first plurality of vias extends at least partially through the first substrate, and a second plurality of vias disposed along the first waveguide length, wherein each of the second plurality of vias extends at least partially through the first substrate, and wherein the first plurality of vias and the second plurality of vias are... The first waveguide width is separated; and a source circuit board, the source circuit board comprising: a front side, a rear side opposite to the front side, and a waveguide channel defined by the source circuit board, the waveguide channel guiding electromagnetic waves to or from the first substrate integrated waveguide, wherein the waveguide channel extends from the rear side toward the front side; wherein: the waveguide channel is at least partially located between the first plurality of vias and the second plurality of vias; the waveguide channel defines a channel length and a channel width; the channel length is greater than the channel width; and the channel length is greater than the first waveguide width.

[0007] The second embodiment A2 includes the integrated digital RF circuit system according to aspect A1, wherein the source circuit board may include a first substrate, the first substrate may include a source electromagnetic wave transmission element, and the source electromagnetic wave transmission element may propagate or receive the electromagnetic waves through the waveguide channel.

[0008] The third embodiment A3 includes the integrated digital RF circuit system according to aspect A2, wherein the source electromagnetic wave transmission element may include: a grounded coplanar waveguide; a microstrip transmission line; a patch element; a slot antenna; an RF chip; or any combination thereof.

[0009] Fourth embodiment A4 includes an integrated digital RF circuit system according to aspect A2 or aspect A3, wherein the first substrate can be attached to the source circuit board by at least one of the following: adhesive; soldering; ambient temperature laser soldering; laser sintering; optical contact; thermal diffusion bonding; or any combination thereof.

[0010] Fifth embodiment A5 includes an integrated digital RF circuit system according to any one of aspects A1 to A4, wherein the integrated digital RF circuit system may further include an antenna package, wherein the antenna package may be attached to the rear side of the source circuit board, and wherein the antenna package may include the first substrate.

[0011] The sixth embodiment A6 includes the integrated digital RF circuit system according to aspect A5, wherein: the antenna package may further include a spacer layer and an antenna layer; the antenna layer may include an antenna element; the spacer layer may be positioned between the antenna layer and the first substrate; and the first substrate may be positioned between the spacer layer and the rear side of the source circuit board.

[0012] The seventh embodiment A7 includes an integrated digital RF circuit system according to aspect A6, wherein the antenna element can perform any of the following operations: receiving a first electromagnetic wave from the first substrate integrated waveguide and transmitting the first electromagnetic wave to the environment; receiving the first electromagnetic wave from the environment and transmitting the first electromagnetic wave to the first substrate integrated waveguide; or any combination thereof.

[0013] Eighth embodiment A8 includes an integrated digital RF circuit system according to any one of aspects A5 to A7, wherein: the source circuit board may further include a second substrate; the second substrate may include a second substrate integrated waveguide; the antenna package may include an encapsulated electromagnetic wave transmission element; the second substrate integrated waveguide may include a source electromagnetic wave transmission element; and the waveguide channel may guide the electromagnetic wave between the source electromagnetic wave transmission element and the encapsulated electromagnetic wave transmission element.

[0014] Ninth embodiment A9 includes an integrated digital RF circuit system according to aspect A8, wherein either or both of the packaged electromagnetic wave transmission element and the source electromagnetic wave transmission element may comprise: a grounded coplanar waveguide; a microstrip transmission line; a patch element; a slot antenna; an RF chip; or any combination thereof.

[0015] Tenth embodiment A10 includes an integrated digital RF circuit system according to aspect A8 or aspect A9, wherein the second substrate integrated waveguide may include: a third plurality of vias disposed along the length of the second waveguide, wherein each of the third plurality of vias extends at least partially through the second substrate; and a fourth plurality of vias disposed along the length of the second waveguide, wherein each of the fourth plurality of vias extends at least partially through the second substrate, and wherein the third plurality of vias and the fourth plurality of vias are separated by the width of the second waveguide; wherein: the waveguide channel may be at least partially located between the third plurality of vias and the fourth plurality of vias; and the channel length may be greater than the width of the second waveguide.

[0016] Eleventh embodiment A11 includes an integrated digital RF circuit system according to any one of A5 to A10, wherein the antenna package can be attached to the source circuit board by at least one of the following: adhesive; soldering; ambient temperature laser soldering; laser sintering; optical contact; thermal diffusion bonding; or any combination thereof.

[0017] The twelfth embodiment A12 includes an integrated digital RF circuit system according to any one of embodiments A1 to A11, wherein the electromagnetic waves may contain frequencies greater than or equal to 300 MHz and less than or equal to 300 GHz.

[0018] The thirteenth embodiment A13 includes the integrated digital RF circuit system according to embodiment A12, wherein the electromagnetic waves may contain frequencies greater than or equal to 75 GHz and less than or equal to 84 GHz.

[0019] Fourteenth embodiment A14 includes an integrated digital RF circuit system according to any one of embodiments A1 to A13, wherein: the electromagnetic wave may include a wavelength λ; the first waveguide width may be greater than or equal to (0.5 * λ) – 0.05 mm; and the first waveguide width may be less than or equal to (0.5 * λ) + 0.05 mm.

[0020] The fifteenth embodiment A15 includes an integrated digital RF circuit system according to any one of embodiments A1 to A14, wherein the channel length may be greater than or equal to 2.9 mm and less than or equal to 3.1 mm; and the channel width may be greater than or equal to 1.4 mm and less than or equal to 1.6 mm.

[0021] The sixteenth embodiment A16 includes an integrated digital RF circuit system according to any one of embodiments A1 to A15, wherein the channel length may be parallel to the first waveguide length.

[0022] The seventeenth embodiment A17 includes an integrated digital RF circuit system according to any one of embodiments A1 to A16, wherein the source circuit board may include a printed circuit board.

[0023] Eighteenth embodiment A18 includes an integrated digital RF circuit system according to any one of embodiments A1 to A17, wherein the first substrate may comprise at least one of the following: glass; ceramic; glass-ceramic; polymer; polycrystalline ceramic; monocrystalline ceramic; or any combination thereof.

[0024] According to embodiment B1, a method for manufacturing an integrated digital RF circuit system may include: forming and / or using a source circuit board, the source circuit board comprising: a substrate, the substrate comprising a substrate integrated waveguide, the substrate integrated waveguide comprising: a waveguide length and a waveguide width, a first plurality of vias disposed along the waveguide length, wherein each of the first plurality of vias extends at least partially through the substrate, and a second plurality of vias disposed along the waveguide length, wherein each of the second plurality of vias extends at least partially through the substrate, and wherein the first plurality of vias and the second plurality of vias are separated by a first waveguide width, a front side, a rear side, the rear side opposite to the front side, and a waveguide channel, the waveguide... A waveguide channel is defined by the source circuit board, the waveguide channel being used to guide electromagnetic waves to or from a first substrate integrated waveguide, wherein the waveguide channel extends from the rear side toward the front side, wherein: the waveguide channel defines a channel length and a channel width, the channel length being greater than the channel width, the channel length being greater than the waveguide width, and the waveguide channel being at least partially positioned between the first plurality of vias and the second plurality of vias; an antenna layer is attached to a spacer layer; the spacer layer is attached to a waveguide layer; the waveguide layer is attached to the rear side of the source circuit board, wherein: the spacer layer is positioned between the waveguide layer and the antenna layer, and the waveguide layer is positioned between the spacer layer and the source circuit board.

[0025] Twentieth embodiment B2 includes the method according to aspect B1, wherein the substrate may include a source electromagnetic wave transmission element, and the source electromagnetic wave transmission element may propagate or receive the electromagnetic wave through the waveguide channel.

[0026] Twenty-first embodiment B3 includes the method according to aspect B2, wherein the source electromagnetic wave transmission element may comprise: a grounded coplanar waveguide; a microstrip transmission line; a patch element; a slot antenna; an RF chip; or any combination thereof.

[0027] Twenty-second embodiment B4 includes the method according to aspect B2 or aspect B3, wherein the substrate can be attached to the source circuit board by at least one of the following: adhesive; soldering; ambient temperature laser soldering; laser sintering; optical contact; thermal diffusion bonding; or any combination thereof.

[0028] The twenty-third embodiment B5 includes the method according to any one of embodiments B1 to B4, wherein the electromagnetic wave may contain a frequency greater than or equal to 300 MHz and less than or equal to 300 GHz.

[0029] The twenty-fourth embodiment B6 includes the method according to embodiment B5, wherein the electromagnetic wave may contain a frequency greater than or equal to 75 GHz and less than or equal to 84 GHz.

[0030] The twenty-fifth embodiment B7 includes the method according to any one of embodiments B1 to B6, wherein: the electromagnetic wave may contain a wavelength λ; the waveguide width may be greater than or equal to (0.5 * λ) – 0.05 mm; and the waveguide width may be less than or equal to (0.5 * λ) + 0.05 mm.

[0031] The twenty-sixth embodiment B8 includes the method according to any one of embodiments B1 to B7, wherein the channel length can be greater than or equal to 2.9 mm and less than or equal to 3.1 mm; and the channel width can be greater than or equal to 1.4 mm and less than or equal to 1.6 mm.

[0032] The twenty-seventh embodiment B9 includes the method according to any one of embodiments B1 to B8, wherein the channel length may be parallel to the waveguide length.

[0033] The twenty-eighth embodiment B10 includes the method according to any one of embodiments B1 to B9, wherein the source circuit board may comprise a printed circuit board.

[0034] Twenty-ninth embodiment B11 includes the method according to any one of embodiments B1 to B10, wherein the substrate may comprise at least one of the following: glass; ceramic; glass-ceramic; polymer; polycrystalline ceramic; monocrystalline ceramic; or any combination thereof.

[0035] According to the thirtieth embodiment C1, a method for manufacturing an integrated digital RF circuit system may include: forming a substrate substrate comprising a substrate integrated waveguide, the substrate integrated waveguide comprising: a first waveguide length and a first waveguide width; a first plurality of vias disposed along the first waveguide length, wherein each of the first plurality of vias extends at least partially through the substrate substrate; and a second plurality of vias disposed along the first waveguide length, wherein each of the second plurality of vias extends at least partially through the substrate substrate; and wherein the first plurality of vias and the second plurality of vias are separated by the first waveguide width; attaching an antenna layer to a spacer layer; attaching the spacer layer to the substrate substrate; and attaching the... A substrate is attached to the rear side of a source circuit board, the source circuit board including: a front side opposite to the rear side, and a waveguide channel defined by the source circuit board, the waveguide channel being used to guide electromagnetic waves to or from the substrate-integrated waveguide, wherein: the waveguide channel extends from the rear side toward the front side, the waveguide channel is at least partially positioned between a first plurality of vias and a second plurality of vias, the waveguide channel defining a channel length and a channel width, the channel length being greater than the channel width, the channel length being greater than the first waveguide width, the substrate being positioned between the spacer layer and the source circuit board, and the spacer layer being positioned between the antenna layer and the substrate.

[0036] The thirty-first embodiment C2 includes the method according to aspect C1, wherein the substrate may include a source electromagnetic wave transmission element, and the source electromagnetic wave transmission element may propagate or receive the electromagnetic wave through the waveguide channel.

[0037] Thirty-second embodiment C3 includes the method according to aspect C2, wherein the source electromagnetic wave transmission element may comprise: a grounded coplanar waveguide; a microstrip transmission line; a patch element; a slot antenna; an RF chip; or any combination thereof.

[0038] The thirty-third embodiment C4 includes the method according to aspect C2 or aspect C3, wherein the substrate can be attached to the source circuit board by at least one of the following: adhesive; soldering; ambient temperature laser soldering; laser sintering; optical contact; thermal diffusion bonding; or any combination thereof.

[0039] The thirty-fourth embodiment C5 includes a method according to any one of aspects C1 to C4, wherein the source circuit board may further include a second substrate; the second substrate may include a second substrate integrated waveguide; the antenna layer may include an encapsulated electromagnetic wave transmission element; and the waveguide channel may guide the electromagnetic wave between the source electromagnetic wave transmission element and the encapsulated electromagnetic wave transmission element.

[0040] Thirty-fifth embodiment C6 includes the method according to aspect C5, wherein either or both of the packaged electromagnetic wave transmission element and the source electromagnetic wave transmission element may comprise: a grounded coplanar waveguide; a microstrip transmission line; a patch element; a slot antenna; an RF chip; or any combination thereof.

[0041] The thirty-sixth embodiment C7 includes the method according to aspect C5 or aspect C6, wherein the second substrate integrated waveguide may include: a second waveguide length and a second waveguide width; a third plurality of vias disposed along the second waveguide length, wherein each of the third plurality of vias extends at least partially through the second substrate; and a fourth plurality of vias disposed along the second waveguide length, wherein each of the fourth plurality of vias extends at least partially through the second substrate, and wherein the third plurality of vias and the fourth plurality of vias are separated by the second waveguide width; wherein: the waveguide channel may be at least partially located between the third plurality of vias and the fourth plurality of vias; and the channel length may be greater than the second waveguide width.

[0042] The thirty-seventh embodiment C8 includes the method according to any one of aspects C1 to C7, wherein the electromagnetic wave may contain a frequency greater than or equal to 300 MHz and less than or equal to 300 GHz.

[0043] The thirty-eighth embodiment C9 includes the method according to aspect C8, wherein the electromagnetic wave may contain a frequency greater than or equal to 75 GHz and less than or equal to 84 GHz.

[0044] The thirty-ninth embodiment C10 includes a method according to any one of aspects C1 to C9, wherein the electromagnetic wave comprises a wavelength λ; the first waveguide width may be greater than or equal to (0.5 * λ) – 0.05 mm; and the first waveguide width may be less than or equal to (0.5 * λ) + 0.05 mm.

[0045] Fortieth embodiment C11 includes the method according to any one of C1 to C10, wherein the channel length may be greater than or equal to 2.9 mm and less than or equal to 3.1 mm; and the channel width may be greater than or equal to 1.4 mm and less than or equal to 1.6 mm.

[0046] Forty-first embodiment C12 includes the method according to any one of embodiments C1 to C11, wherein the channel length may be parallel to the first waveguide length.

[0047] Forty-second embodiment C13 includes the method according to any one of embodiments C1 to C12, wherein the source circuit board may comprise a printed circuit board.

[0048] Forty-third embodiment C14 includes the method according to any one of embodiments C1 to C13, wherein the first substrate may comprise at least one of the following: glass; ceramic; glass-ceramic; polymer; polycrystalline ceramic; monocrystalline ceramic; or any combination thereof.

[0049] Additional features and advantages of the aspects described herein will be set forth in the detailed description below, and will be recognized in part by those skilled in the art from the description or by practice of the aspects described herein (including the detailed description below, the claims and the drawings).

[0050] It should be understood that both the foregoing general description and the following detailed description describe various aspects and are intended to provide an overview or framework for understanding the nature and characteristics of the claimed subject matter. Drawings are included to provide further understanding of the aspects, and these drawings are incorporated in and form a part of this specification. The drawings illustrate the aspects described herein and, together with the specification, serve to explain the principles and operation of the claimed subject matter. Attached Figure Description

[0051] The embodiments illustrated in the accompanying drawings are illustrative and exemplary in nature and are not intended to limit the subject matter defined by the claims. The following detailed description of the illustrative embodiments can be understood when read in conjunction with the following drawings, wherein the same structures are indicated by the same reference numerals, and in the drawings:

[0052] Figure 1 An exploded view of an integrated digital RF circuit system according to one or more embodiments shown and described herein is schematically depicted, the integrated digital RF circuit system comprising a source circuit board having a top circuit board and a bottom circuit board, and an antenna package having a waveguide layer, a spacer layer and an antenna layer.

[0053] Figure 2A schematically depicts the rear side of the bottom layer of a source circuit board according to one or more embodiments shown and described herein;

[0054] Figure 2B An enlarged view of a first substrate on the rear side of the bottom layer of the source circuit board of FIG2A is schematically depicted according to one or more embodiments shown and described herein.

[0055] Figure 2C schematically depicts the front side of the bottom layer of the source circuit board of Figure 2A according to one or more embodiments shown and described herein;

[0056] Figure 2D An enlarged view schematically depicting an integrated circuit on the front side of the bottom layer of the source circuit board of FIG2A, according to one or more embodiments shown and described herein;

[0057] Figure 3A schematically depicts the front side of the top layer of a source circuit board according to one or more embodiments shown and described herein;

[0058] Figure 3B An enlarged view schematically depicts a waveguide channel on the front side of the top layer of the source circuit board depicted in FIG3A, according to one or more embodiments shown and described herein;

[0059] Figure 3C An enlarged view of a substrate-integrated waveguide on a first substrate on the rear side of the bottom layer of a source circuit board, according to one or more embodiments shown and described herein, and an overlay view of the waveguide channel on the top layer of the source circuit board depicted in FIG3A.

[0060] Figure 4A An exploded view of the waveguide layer of an antenna package above the top layer of a source circuit board, according to one or more embodiments shown and described herein;

[0061] Figure 4B The illustration schematically depicts one or more embodiments shown and described herein. Figure 4A A magnified view of the substrate-integrated waveguide on the waveguide layer, and an overlay view of the waveguide channel on the top layer of the source circuit board.

[0062] Figure 5 An antenna layer of an antenna package according to one or more embodiments shown and described herein is schematically depicted;

[0063] Figure 6 This is a flowchart of a first method for manufacturing an integrated digital RF circuit system according to one or more embodiments shown and described herein;

[0064] Figure 7 This is a flowchart of a second method for manufacturing an integrated digital RF circuit system according to one or more embodiments shown and described herein; and

[0065] Figure 8 This is a plot of insertion loss versus frequency of electromagnetic waves propagated by an exemplary substrate-integrated waveguide, based on one or more embodiments shown and described herein (y-axis: insertion loss of the substrate-integrated waveguide (dB); x-axis: frequency of electromagnetic waves propagated by the substrate-integrated waveguide (GHz)). Detailed Implementation

[0066] One form of this disclosure relates to a source circuit board and an integrated digital radio frequency (“RF”) circuit system having waveguide channels for connecting an antenna to the source circuit board, and particularly for routing microwaves or millimeter waves from waveguides on the source circuit board to waveguides on the antenna. Reference will now be made in detail to the source circuit board, the integrated digital RF circuit system, and methods of manufacturing thereof.

[0067] Specifically, in embodiments, the source circuit board and integrated digital RF circuit system described herein may include waveguide channels positioned around electromagnetic wave transmission elements, at least partially positioned between waveguide biases, and parallel to or substantially parallel to vias in the waveguides. In embodiments, the waveguide may be a waveguide of the source circuit board of the integrated digital RF circuit system or a substrate of an antenna package.

[0068] In an embodiment, the waveguide channel may be positioned around the electromagnetic wave transmission element. In an embodiment, the waveguide channel may be at least partially positioned between a first plurality of vias and a second plurality of vias in the waveguide. In an embodiment, the waveguide channel may define a channel length and a channel width, and the waveguide may define a waveguide length and a waveguide width; the channel length may be greater than the channel width, and the channel length may be greater than the waveguide width. Therefore, in an embodiment, the waveguide channel may be positioned parallel to or substantially parallel to the waveguide length of the waveguide. Therefore, in an embodiment, the size of the waveguide channel may be set such that the channel length of the waveguide channel is not perpendicular to or substantially perpendicular to the waveguide length of the waveguide, while also being positioned around the electromagnetic wave transmission element.

[0069] In an embodiment, the waveguide channel may define a channel width and a channel length greater than the channel width, and the waveguide channel may be positioned around the source electromagnetic wave transmission element of the source circuit board, at least partially positioned between a first plurality of vias and a second plurality of vias of the first waveguide of the source circuit board, positioned around the packaged electromagnetic wave transmission element of the antenna package, and at least partially positioned between a third plurality of vias and a fourth plurality of vias of the second waveguide of the antenna package, and the channel length may be greater than both the first waveguide width of the first waveguide and the second waveguide width of the second waveguide. Therefore, in an embodiment, the waveguide channel may be positioned parallel to or substantially parallel to both the first waveguide length of the first waveguide and the second waveguide length of the second waveguide.

[0070] Therefore, one advantage of this disclosure is that, in embodiments, as further described in detail below, such a waveguide channel can minimize electrical losses between the first waveguide of the source circuit board and the second waveguide of the antenna package (with the waveguide channel positioned between the two), because, for example, the waveguide channel can provide a waveguide for electromagnetic waves propagating between the first and second waveguides.

[0071] Another advantage of this disclosure is that, in embodiments, by orienting the waveguide channel parallel to or substantially parallel to the waveguide length, the size of the waveguide and / or the substrate or layer on which the waveguide is positioned can be reduced, for example, by reducing the waveguide width, since the waveguide width does not necessarily include all or most of the channel length. Therefore, in embodiments, by reducing the size of the waveguide and / or the substrate or layer on which the waveguide is positioned, the manufacturing cost of the waveguide, the manufacturing cost of the substrate and / or layer on which the waveguide is positioned, and / or the manufacturing cost of the source circuit board, antenna package, and / or integrated digital RF circuit system of the substrate and / or layer can be reduced.

[0072] Another advantage of this disclosure is that, in embodiments, an integrated digital RF circuit system comprising an antenna package and a source circuit board having the waveguide channel embodiments described herein can be fabricated in the embodiments without soldering the source circuit board to the antenna package. Therefore, in embodiments, the integrated digital RF circuit system described herein can provide reduced stress experienced by the integrated digital RF circuit system (stress caused, for example, by thermal expansion resulting from soldering the antenna package to the source circuit board) and / or greater flexibility in the selection of materials for forming the source circuit board, the antenna package, and / or any components of the source circuit board and / or the antenna package (compared to alternative circuit systems, for example, soldering the antenna package to a circuit board).

[0073] Another advantage of this disclosure is that, in embodiments, the integrated digital RF circuitry system described herein may not require a layer positioned between the antenna package and the source circuit board, due to, for example, the source circuit board having the waveguide channel embodiment described herein and / or the source circuit board not being soldered to the antenna layer. Therefore, in embodiments, the integrated digital RF circuitry system described herein may contain fewer components compared to, for example, alternative circuitry systems, thereby reducing, for example, the cost and / or complexity of manufacturing the embodiments of the integrated digital RF circuitry system described herein.

[0074] In this document, a range may be expressed as from “about” a specific value and / or to “about” another specific value. When expressing such a range, another embodiment includes from one specific value and / or to another specific value. Similarly, when a value is expressed as an approximation using the antecedent “about,” it should be understood that a specific value forms another embodiment. It should be further understood that the endpoints of each range are significant relative to and independent of the other endpoint.

[0075] As used herein, directional terms (e.g., up, down, right, left, front, back, top, bottom) are formulated only with reference to the accompanying drawings and are not intended to imply absolute orientation.

[0076] Unless otherwise expressly stated, it is never intended to interpret any method set forth herein as requiring its steps to be performed in a particular order, nor is it intended to require any particular orientation of any device. Therefore, it is never intended to infer any order or orientation in any respect where a method claim does not actually describe the order in which its steps are followed, or where any device claim does not actually describe the order or orientation of individual components, or where the claims or description do not otherwise specifically specify that the steps are limited to a particular order, or where a particular order or orientation of the components of the device is not described. This applies to any possible non-expressive basis for interpretation, including: logical questions relating to the arrangement of steps, the flow of operations, the order of components, or the orientation of components; simple meanings derived from grammatical organization or punctuation; and the number or type of embodiments described in the description.

[0077] As used herein, unless the context explicitly indicates otherwise, the singular forms “a / an” and “the” include plural indicators. Thus, for example, unless the context explicitly indicates otherwise, a reference to “a” component includes aspects having two or more such components.

[0078] Now turn to the attached diagram, Figure 1 In this embodiment, the integrated digital RF circuit system 100 includes a source circuit board 110 and an antenna package 120. In this embodiment, the source circuit board 110 may be a printed circuit board (“PCB”). Figure 1 In one embodiment, the source circuit board 110 includes a bottom layer 200 and a top layer 300. However, in other embodiments, the source circuit board 110 may include only one, three, four, or even five or more layers. Figure 1 In one embodiment, the antenna package 120 includes a waveguide layer 400, a spacer layer 450, and an antenna layer 500.

[0079] exist Figure 1 In one embodiment, the antenna package 120 can be attached to the rear side 114 of the source circuit board 110 (in... Figure 1 In one embodiment, it is defined by the top layer 300 of the circuit board. Furthermore, in Figure 1 In this embodiment, layers 400, 450, and 500 can all be attached sequentially, such that spacer layer 450 is positioned between waveguide layer 400 and antenna layer 500. Therefore, in Figure 1In one embodiment, when the integrated digital RF circuitry system 100 is fully assembled (e.g., by attaching the antenna package 120 to the source board 110), the waveguide layer 400 can be positioned between the spacer layer 450 and the rear side 114 of the source board 110, and the antenna layer 500 is the farthest layer of layers 400, 450, and 500 relative to the source board 110. In another embodiment, the top board layer 300 can be attached to the bottom board layer 200, such that the bottom board layer 200 defines the front side 112 of the source board 110 opposite the rear side 114.

[0080] In embodiments, circuit board layers 200, 300 may be attached by adhesives (e.g., organic adhesives), soldering, ambient temperature laser soldering, laser sintering, optical contact (e.g., screwing), thermal diffusion bonding between metal layers, and / or any other attachment mechanism known in the art. In embodiments where circuit board layers 200, 300 are attached by adhesives, the adhesive may be applied by rollers, inkjet printing, spraying, pre-cut adhesive film, or any combination thereof.

[0081] In embodiments, any, some, or all of layers 400, 450, and 500 may be attached by adhesives (e.g., organic adhesives), welding, ambient temperature laser welding, laser sintering, optical contact (e.g., tightening), thermal diffusion bonding between metal layers, and / or any other attachment mechanism known in the art. In embodiments where any, some, or all of layers 400, 450, and 500 are attached by adhesives, the adhesive may be applied by rollers, inkjet printing, spraying, pre-cut adhesive films, or any combination thereof.

[0082] In embodiments, the source circuit board 110 and the antenna package 120 may be attached by adhesives (e.g., organic adhesives), soldering, ambient temperature laser soldering, laser sintering, optical contact (e.g., screwing), thermal diffusion bonding between metal layers, and / or any other attachment mechanism known in the art. In embodiments where the source circuit board 110 and the antenna package 120 are attached by adhesive, the adhesive may be applied by rollers, inkjet printing, spraying, pre-cut adhesive film, or any combination thereof.

[0083] In embodiments, the integrated digital RF circuit system 100 can be used for telecommunications applications such as third-generation (3G), fourth-generation (4G), fifth-generation (5G) and / or sixth-generation (6G) cellular network technologies and Long Term Evolution (LTE) technologies, Bluetooth communications, near field communications (NFC), radio frequency identification (RFID) signals, global positioning system (GPS) signals, satellite-to-satellite communications, radar, and other radio frequency applications. Therefore, in embodiments, the antenna layer 500 may include antenna elements (e.g., such as...) that transmit and / or receive and / or are configured to transmit and / or receive RF signals (e.g., in the form of electromagnetic waves, which in embodiments may be microwaves or millimeter waves). Figure 5 (Depicted as antenna element 510 and described in further detail below). In an embodiment, antenna layer 500 may thereby propagate and / or receive and / or be configured to propagate and / or receive electromagnetic signals that pass through spacer layer 450 and reach source board 110 via waveguide of waveguide layer 400, whereby source board 110 may be electrically coupled to antenna package 120.

[0084] In embodiments, any one or more of the source circuit board 110, the bottom circuit board 200, and / or the top circuit board 300 may be partially or wholly formed of one or more dielectric materials. In embodiments, the dielectric materials partially or wholly forming any one or more of the source circuit board 110, the bottom circuit board 200, and / or the top circuit board 300 may include glass (in embodiments, any one or more of lithium potassium borosilicate glass, silica glass, ion-exchange glass, and / or inorganic glass), ceramics (in embodiments, any one or more of polycrystalline ceramics, polycrystalline inorganic materials, polycrystalline alumina, alumina, and / or silica), glass-ceramics (in embodiments, Corning9606® cordierite glass-ceramics), polymers (in embodiments, polycarbonate, ceramic-filled PTFE composites, and / or Topas®), polycrystalline ceramics, monocrystalline ceramics (in embodiments, sapphire), and / or any combination thereof. In embodiments, the dielectric materials partially or wholly forming any of the source circuit board 110, the bottom circuit board 200, and / or the top circuit board 300 may include organic and / or inorganic materials. In embodiments, any of the source circuit board 110, the bottom circuit board 200, and / or the top circuit board 300 may be partially or wholly formed of multiple dielectric materials, and in some such embodiments, the multiple dielectric materials may include multiple organic materials, multiple inorganic materials, and / or any combination of one or more organic materials and one or more inorganic materials. In embodiments where any of the source circuit board 110, the bottom circuit board 200, and / or the top circuit board 300 is partially or wholly formed of multiple dielectric materials, the multiple dielectric materials may form separate layers of any of the source circuit board 110, the bottom circuit board 200, and / or the top circuit board 300. In an embodiment, one or more laminating materials may be applied to any, some or all of the source circuit board 110, the bottom circuit board 200 and / or the top circuit board 300 to, for example, reduce the dielectric constant of the source circuit board 110, the bottom circuit board 200 and / or the top circuit board 300.

[0085] In embodiments, the spacer layer 450 may be formed of a dielectric material, such as glass (including any, some, or all of lithium potassium borosilicate glass, silica glass, and / or inorganic glass), ceramic (including any, some, or all of polycrystalline ceramics, polycrystalline inorganic materials, polycrystalline alumina, alumina, and / or silica), glass-ceramic (including Corning 9606® cordierite glass-ceramic), polymer (including polycarbonate, ceramic-filled PTFE composites, and / or Topas®), polycrystalline ceramics, monocrystalline ceramics (including sapphire), and / or any combination thereof. In embodiments, the spacer layer 450 may be formed of an adhesive. In embodiments, the spacer layer 450 may be formed of an adhesive comprising organic and / or inorganic adhesives. In embodiments, the spacer layer 450 may be formed of an adhesive containing glass beads. In an embodiment, the antenna layer 500 may be formed of some or all of the same dielectric material as any one of the source circuit board 110, the bottom circuit board 200, the top circuit board 300, the waveguide layer 400 and / or the antenna layer 500, which in an embodiment can reduce bending of the integrated digital RF circuit system 100.

[0086] In an embodiment, the antenna layer 500 may be formed of a dielectric material, such as glass (including, in an embodiment, any, some, or all of lithium potassium borosilicate glass, silica glass, and / or inorganic glass), ceramic (including, in an embodiment, any, some, or all of polycrystalline ceramics, polycrystalline inorganic materials, polycrystalline alumina, alumina, and / or silica), glass-ceramic (including Corning 9606® cordierite glass-ceramic), polymer (including, in an embodiment, polycarbonate, ceramic-filled PTFE composites, and / or Topas®), polycrystalline ceramics, monocrystalline ceramics (including, in an embodiment, sapphire), and / or any combination thereof. In an embodiment, the antenna layer 500 may be formed of the same dielectric material as any, some, or all of the source circuit board 110, the bottom circuit board 200, the top circuit board 300, the waveguide layer 400, and / or the spacer layer 450, which in an embodiment can reduce bending of the integrated digital RF circuit system 100.

[0087] In an embodiment, the spacer layer 450 can be positioned between the antenna layer 500 and the waveguide layer 400 by attaching the waveguide layer 400 to the spacer layer 450 and attaching the antenna layer 500 to the side of the spacer layer 450 opposite to the waveguide layer 400. By positioning the spacer layer 450 between the antenna layer 500 and the waveguide layer 400, the spacer layer 450 can create a resonant structure, thereby enabling the waveguide layer 400 to propagate electromagnetic waves from the source circuit board 110 to the antenna layer 500 (via, for example, the waveguide layer 400) and / or from the antenna layer 500 to the source circuit board 110 (via, for example, the waveguide layer 400). However, in an embodiment, in order to propagate electromagnetic waves between the waveguide of the source circuit board 110 and the waveguide layer 400, a connection mechanism can advantageously be included between the two to minimize the electrical loss of the electromagnetic waves between the source circuit board 110 and the waveguide layer 400.

[0088] In embodiments, some applications of integrated digital RF circuitry systems (such as integrated digital RF circuitry system 100 in this embodiment) may desire a minimization of size, such size as defined by, for example, the length of integrated digital RF circuitry system 100, source board 110, and / or antenna package 120 (e.g., as in...). Figure 1 (Measured in the x direction); the width of the integrated digital RF circuit system 100, source board 110, and / or antenna package 120 (e.g., as in...). Figure 1 (measured in the y-direction); and / or the thickness of the integrated digital RF circuit system 100, source board 110, and / or antenna package 120 (e.g., as in...). Figure 1 (Measured in the z-direction). Therefore, in an embodiment, it may be desirable to reduce the size of the connection mechanism between the source circuit board 110 and the waveguide layer 400.

[0089] In the embodiments, any one or more of the source circuit board 110 and antenna package 120 and / or any one or more of layers 200, 300, 400, 450, 500 may include components not depicted herein, but which may be readily understood by those skilled in the art.

[0090] Referring to Figures 2A-2B, the first substrate 250 may be attached to the side of the circuit board bottom layer 200 closest to the rear side 114 of the source circuit board 110. In the embodiment of Figures 2A-2B, the first substrate 250 may be separable from (and, for example, attached to) the circuit board bottom layer 200. However, in other embodiments, the first substrate 250 may completely form the circuit board bottom layer 200.

[0091] The first substrate 250 includes a first substrate integrated waveguide (“SIW”) 260, and a source electromagnetic wave transmission element 261 is positioned between vias 262 of each of the first SIWs (e.g., as shown in the image). Figure 3C (As depicted in the image and described in further detail below). In an embodiment, each of the source electromagnetic wave transmission elements 261 can propagate electromagnetic waves (guided by, for example, the first SIW 260) to other electromagnetic wave transmission elements (e.g., the electromagnetic wave transmission elements of the antenna package 120 (e.g., the first electromagnetic wave transmission element 421A, such as...). Figures 4A-4B (as depicted in the description and further detailed below) and / or receive electromagnetic waves from other electromagnetic wave transmission elements. Therefore, in embodiments, the source electromagnetic wave transmission element 261 may include, for example, a grounded coplanar waveguide, a microstrip transmission line, a patch element (e.g., a patch antenna), a slot antenna, an RF chip, or any combination thereof.

[0092] In the embodiments shown in Figures 2A-2B, the first substrate 250 includes seven first SIWs 260. However, in other embodiments, the first substrate 250 may include any number of first SIWs 260, including two, three, or even four or more first SIWs 260. In some embodiments, the first substrate 250 may include only one first SIW 260.

[0093] In embodiments, the first substrate 250 may be attached to the circuit board bottom layer 200 and / or the source circuit board 110 via adhesives (e.g., organic adhesives), soldering, ambient temperature laser soldering, laser sintering, optical contact (e.g., screwing), thermal diffusion bonding between metal layers, and / or any other attachment mechanism known in the art. In embodiments where the first substrate 250 and the source circuit board 110 or the circuit board bottom layer 200 are attached by adhesive, the adhesive may be applied via rollers, inkjet printing, spraying, pre-cut adhesive film, or any combination thereof.

[0094] In embodiments, the first substrate 250 may be partially or entirely formed of one or more dielectric materials. In embodiments, the dielectric material forming the first substrate 250 may include glass (in embodiments, any, some, or all of lithium potassium borosilicate glass, silica glass, ion-exchange glass, and / or inorganic glass), ceramics (in embodiments, any, some, or all of polycrystalline ceramics, polycrystalline inorganic materials, polycrystalline alumina, alumina, and / or silica), glass-ceramics (in embodiments, Corning 9606® cordierite glass-ceramics), polymers (in embodiments, polycarbonate, ceramic-filled PTFE composites, and / or Topas®), polycrystalline ceramics, monocrystalline ceramics (in embodiments, sapphire), and / or any combination thereof. In embodiments, the dielectric material forming the first substrate 250 may include organic and / or inorganic materials. In embodiments, the first substrate 250 may be formed partially or entirely of a variety of dielectric materials, and in some such embodiments, the variety of dielectric materials may include a variety of organic materials, a variety of inorganic materials, and / or any combination of one or more organic materials and one or more inorganic materials. In embodiments where the first substrate 250 is formed partially or entirely of a variety of dielectric materials, the variety of dielectric materials may form separate layers of the first substrate 250. In embodiments, one or more laminating materials may be applied to the first substrate 250 to, for example, reduce the dielectric constant of the first substrate 250.

[0095] Referring to Figures 2C-2D, in an embodiment, the front side 112 of the bottom layer 200 of the circuit board includes an integrated circuit 270 (e.g., a microchip or other similar structure known in the art). In an embodiment, the integrated circuit 270 may be electrically coupled to microstrip transmission lines 271, each of which may be electrically coupled to a corresponding source electromagnetic wave transmission element in the source electromagnetic wave transmission element 261, such that the microstrip transmission line 271 may propagate electromagnetic waves to and / or receive electromagnetic waves from the corresponding source electromagnetic wave transmission element in the source electromagnetic wave transmission element 261 via a corresponding first SIW in the first SIW 260. In an embodiment, instead of having microstrip transmission lines 271, the integrated circuit 270 may be electrically coupled to the source electromagnetic wave transmission element 261 via other mechanisms (e.g., grounded coplanar waveguides).

[0096] Referring to Figures 3A-3B, the top layer 300 of the circuit board defines waveguide channels 310 (that is, the top layer 300 of the circuit board forms waveguide channels 310 as gaps within the top layer 300 of the circuit board). In an embodiment, each waveguide channel 310 can be positioned such that when circuit board layers 200, 300 are attached, each waveguide channel 310 is positioned around a corresponding source electromagnetic wave transmission element in the source electromagnetic wave transmission element 261. Therefore, in an embodiment, the waveguide channel 310 can act as a connection mechanism (e.g., a coupler) that can electrically couple the source electromagnetic wave transmission element 261 to other electromagnetic wave transmission elements, such as the electromagnetic wave transmission elements of the antenna package 120 (e.g., the first packaged electromagnetic wave transmission element 421A, such as...). Figures 4A-4B As depicted in the diagram and described in further detail below, the source electromagnetic wave transmission element 261 can propagate electromagnetic waves to and / or receive electromagnetic waves from other such electromagnetic wave transmission elements. Therefore, such electromagnetic waves can be guided by the waveguide channel 310 between the source electromagnetic wave transmission element 261 and the other such electromagnetic wave transmission elements, thereby reducing, for example, the electrical loss of electromagnetic waves between the source electromagnetic wave transmission element 261 and the other such electromagnetic wave transmission elements. The waveguide channel 310 can thus act as a waveguide for electromagnetic waves between the source electromagnetic wave transmission element 261 and the other electromagnetic wave transmission elements.

[0097] In an embodiment, waveguide channel 310 may be a hollow waveguide. In an embodiment, waveguide channel 310 may be a rectangular or substantially rectangular waveguide (as described below). Figure 3C (To be described in further detail). In an embodiment, the waveguide channel 310 may be a gap in the top layer 300 of the circuit board. In an embodiment, the top layer 300 of the circuit board may include a metal plating around the walls of the waveguide channel 310. In an embodiment, the waveguide channel 310 may be a milled groove in the top layer 300 of the circuit board.

[0098] refer to Figure 3C An exemplary first SIW 260 on the rear side 114 of the first substrate 250 may be defined by vias 262, the vias including a first plurality of vias 262A (e.g., arranged linearly in a first row) and a second plurality of vias 262B (e.g., arranged linearly in a second row), wherein the first plurality of vias 262A and the second plurality of vias 262B define an internal spacing (w) between the internal edges of the plurality of vias 262A, 262B. In an embodiment, each first SIW in the first SIW 260 of Figures 2A-2B may be substantially similar to Figure 3CThe exemplary first SIW 260 depicted in Figures 2A-2B. However, as described elsewhere herein, any, some, or all of the first SIW 260 of Figures 2A-2B may be modified, for example, by having a different number of vias 262, having a different number of source electromagnetic wave transmission elements 261 positioned between the vias 262, and / or otherwise differing from the first SIW 260. Figure 3C The exemplary first SIW 260 depicted herein is as described elsewhere. In embodiments, any, some, or all of the vias 262 may extend at least partially through the first substrate 250. In embodiments, any, some, or all of the vias 262 may extend completely through the first substrate 250. Figure 3C In one embodiment, the through holes 262 are arranged in two rows (e.g., a first plurality of through holes 262A and a second plurality of through holes 262B). However, in other embodiments, the through holes 262 can be arranged in any number of rows, including three, four, or even five or more rows in the embodiments. Figure 3C In one embodiment, the first SIW 260 includes 27 through holes. However, in other embodiments, the first SIW 260 may alternatively include 10 or more through holes 262, 100 or more through holes 262, 250 or more through holes 262, 500 or more through holes 262, or even 1,000 or more through holes 262.

[0099] In the embodiments of Figures 2A-2B and 3C, each of the first SIWs 260 has only one source electromagnetic wave transmission element 261 positioned between the vias 262 of each of the first SIWs 260. However, in other embodiments, any, some, or all of the first SIWs 260 may have multiple source electromagnetic wave transmission elements 261 positioned between the vias 262 of each of the first SIWs 260. In the embodiments, any, some, or all of the first SIWs 260 may have different numbers of source electromagnetic wave transmission elements 261 positioned between the vias 262 of each of the first SIWs 260.

[0100] In an embodiment, the first SIW 260 may propagate and / or be configured to propagate electromagnetic waves comprising a frequency (f) and a vacuum wavelength (λ). In an embodiment, the first SIW 260 may propagate and / or be configured to propagate electromagnetic waves along and / or parallel to a first waveguide length (l) between each of the plurality of vias 262A, 262B, wherein the first waveguide length (l) of the first SIW 260 extends along the propagation direction of the electromagnetic wave through the first SIW 260. In embodiments having more than two rows of vias 262, each additional row of vias 262 may further define an additional waveguide along which additional electromagnetic waves may propagate.

[0101] In some embodiments, the frequency (f) of the electromagnetic wave can be greater than or equal to 100 MHz, 300 MHz, 3 GHz, greater than or equal to 30 GHz, greater than or equal to 50 GHz, greater than or equal to 100 GHz, greater than or equal to 200 GHz, or even greater than or equal to 300 GHz. In some embodiments, the frequency (f) of the electromagnetic wave can be less than or equal to 400 GHz, less than or equal to 300 GHz, less than or equal to 200 GHz, less than or equal to 100 GHz, less than or equal to 50 GHz, less than or equal to 30 GHz, less than or equal to 3 GHz, or even less than or equal to 300 MHz. In some embodiments, the frequency (f) of the electromagnetic wave can be greater than or equal to 100 MHz and less than or equal to 400 GHz. In some embodiments, the frequency (f) of the electromagnetic wave can be greater than or equal to 100 MHz and less than or equal to 300 GHz. In some embodiments, the frequency (f) of the electromagnetic wave can be greater than or equal to 100 MHz and less than or equal to 200 GHz. In one embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 100 MHz and less than or equal to 100 GHz. In another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 100 MHz and less than or equal to 50 GHz. In yet another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 100 MHz and less than or equal to 30 GHz. In yet another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 100 MHz and less than or equal to 3 GHz. In yet another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 100 MHz and less than or equal to 300 GHz. In yet another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 300 MHz and less than or equal to 400 GHz. In yet another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 300 MHz and less than or equal to 300 GHz. In yet another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 300 MHz and less than or equal to 200 GHz. In one embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 300 MHz and less than or equal to 100 GHz. In another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 300 MHz and less than or equal to 50 GHz. In yet another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 300 MHz and less than or equal to 30 GHz. In yet another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 300 MHz and less than or equal to 3 GHz. In yet another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 3 GHz and less than or equal to 400 GHz. In yet another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 3 GHz and less than or equal to 300 GHz. In yet another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 3 GHz and less than or equal to 200 GHz.In some embodiments, the frequency (f) of the electromagnetic wave can be greater than or equal to 3 GHz and less than or equal to 100 GHz. In some embodiments, the frequency (f) of the electromagnetic wave can be greater than or equal to 3 GHz and less than or equal to 50 GHz. In some embodiments, the frequency (f) of the electromagnetic wave can be greater than or equal to 3 GHz and less than or equal to 30 GHz. In some embodiments, the frequency (f) of the electromagnetic wave can be greater than or equal to 30 GHz and less than or equal to 400 GHz. In some embodiments, the frequency (f) of the electromagnetic wave can be greater than or equal to 30 GHz and less than or equal to 300 GHz. In some embodiments, the frequency (f) of the electromagnetic wave can be greater than or equal to 30 GHz and less than or equal to 200 GHz. In some embodiments, the frequency (f) of the electromagnetic wave can be greater than or equal to 30 GHz and less than or equal to 100 GHz. In some embodiments, the frequency (f) of the electromagnetic wave can be greater than or equal to 30 GHz and less than or equal to 50 GHz. In some embodiments, the frequency (f) of the electromagnetic wave can be greater than or equal to 50 GHz and less than or equal to 400 GHz. In one embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 50 GHz and less than or equal to 300 GHz. In another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 50 GHz and less than or equal to 200 GHz. In yet another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 50 GHz and less than or equal to 100 GHz. In yet another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 100 GHz and less than or equal to 400 GHz. In yet another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 100 GHz and less than or equal to 300 GHz. In yet another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 100 GHz and less than or equal to 200 GHz. In yet another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 200 GHz and less than or equal to 400 GHz. In yet another embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 200 GHz and less than or equal to 300 GHz. In an embodiment, the frequency (f) of the electromagnetic wave can be greater than or equal to 300 GHz and less than or equal to 400 GHz. In an embodiment, the frequency (f) of the electromagnetic wave can be in any other range above, such as greater than or equal to 75 GHz and less than or equal to 84 GHz in an embodiment.

[0102] In some embodiments, the vacuum wavelength (λ) of the electromagnetic wave can be greater than or equal to 1 µm, greater than or equal to 1 mm, greater than or equal to 10 mm, greater than or equal to 50 mm, or even greater than or equal to 1 cm. In some embodiments, the vacuum wavelength (λ) of the electromagnetic wave can be less than or equal to 10 cm, less than or equal to 1 cm, less than or equal to 50 mm, less than or equal to 10 mm, or even less than or equal to 1 mm. In some embodiments, the vacuum wavelength (λ) of the electromagnetic wave can be greater than or equal to 1 µm and less than or equal to 10 cm. In some embodiments, the vacuum wavelength (λ) of the electromagnetic wave can be greater than or equal to 1 µm and less than or equal to 1 cm. In some embodiments, the vacuum wavelength (λ) of the electromagnetic wave can be greater than or equal to 1 µm and less than or equal to 50 mm. In some embodiments, the vacuum wavelength (λ) of the electromagnetic wave can be greater than or equal to 1 µm and less than or equal to 10 mm. In some embodiments, the vacuum wavelength (λ) of the electromagnetic wave can be greater than or equal to 1 µm and less than or equal to 1 mm. In some embodiments, the vacuum wavelength (λ) of the electromagnetic wave can be greater than or equal to 1 mm and less than or equal to 10 cm. In some embodiments, the vacuum wavelength (λ) of the electromagnetic wave can be greater than or equal to 1 mm and less than or equal to 1 cm. In some embodiments, the vacuum wavelength (λ) of the electromagnetic wave can be greater than or equal to 1 mm and less than or equal to 50 mm. In some embodiments, the vacuum wavelength (λ) of the electromagnetic wave can be greater than or equal to 1 mm and less than or equal to 10 mm. In some embodiments, the vacuum wavelength (λ) of the electromagnetic wave can be greater than or equal to 10 mm and less than or equal to 10 cm. In some embodiments, the vacuum wavelength (λ) of the electromagnetic wave can be greater than or equal to 10 mm and less than or equal to 1 cm. In some embodiments, the vacuum wavelength (λ) of the electromagnetic wave can be greater than or equal to 10 mm and less than or equal to 50 mm. In some embodiments, the vacuum wavelength (λ) of the electromagnetic wave can be greater than or equal to 50 mm and less than or equal to 10 cm. In some embodiments, the vacuum wavelength (λ) of the electromagnetic wave can be greater than or equal to 50 mm and less than or equal to 1 cm. In an embodiment, the vacuum wavelength (λ) of the electromagnetic wave can be greater than or equal to 1 cm and less than or equal to 10 cm. In an embodiment, the vacuum wavelength (λ) of the electromagnetic wave can be in any other range within the above range.

[0103] Still referencing Figure 3CIn an embodiment, via 262 defines a via spacing (p) (e.g., the spacing of the first SIW 260), said via spacing being the distance between each via 262 and each via in adjacent vias 262 in the same row (e.g., a first plurality of vias 262A or a second plurality of vias 262B). For example, the via spacing (p) may be the distance between the center of a via and the center of adjacent vias in the same row (e.g., center-to-center distance). In an embodiment, the via spacing (p) between vias in different rows may be substantially constant. For example, in Figure 3C In one embodiment, the via spacing (p) defined by the first plurality of vias 262A can be substantially equal to the via spacing (p) defined by the second plurality of vias 262B. However, in other embodiments, the via spacing (p) across different rows of vias may not be substantially constant. For example, in an embodiment, the first plurality of vias 262A may define via spacing (p) with a length different from the via spacing (p) defined by the second plurality of vias 262B. Furthermore, in an embodiment, the via spacing (p) of the vias of the other SIWs of the first SIW 260 (e.g., depicted in Figures 2A-2D) may vary among these SIWs of the first SIW 260.

[0104] In some embodiments, the via spacing (p) can be greater than or equal to 50 µm, greater than or equal to 100 µm, greater than or equal to 250 µm, greater than or equal to 500 µm, or even greater than or equal to 750 µm. In some embodiments, the via spacing (p) can be less than or equal to 1 mm, less than or equal to 750 µm, less than or equal to 500 µm, less than or equal to 250 µm, or even less than or equal to 100 µm. In some embodiments, the via spacing (p) can be greater than or equal to 50 µm and less than or equal to 1 mm. In some embodiments, the via spacing (p) can be greater than or equal to 50 µm and less than or equal to 750 µm. In some embodiments, the via spacing (p) can be greater than or equal to 50 µm and less than or equal to 500 µm. In some embodiments, the via spacing (p) can be greater than or equal to 50 µm and less than or equal to 250 µm. In some embodiments, the via spacing (p) can be greater than or equal to 50 µm and less than or equal to 100 µm. In one embodiment, the via spacing (p) can be greater than or equal to 100 µm and less than or equal to 1 mm. In another embodiment, the via spacing (p) can be greater than or equal to 100 µm and less than or equal to 750 µm. In another embodiment, the via spacing (p) can be greater than or equal to 100 µm and less than or equal to 500 µm. In another embodiment, the via spacing (p) can be greater than or equal to 100 µm and less than or equal to 250 µm. In another embodiment, the via spacing (p) can be greater than or equal to 250 µm and less than or equal to 1 mm. In another embodiment, the via spacing (p) can be greater than or equal to 250 µm and less than or equal to 750 µm. In another embodiment, the via spacing (p) can be greater than or equal to 250 µm and less than or equal to 500 µm. In another embodiment, the via spacing (p) can be greater than or equal to 500 µm and less than or equal to 1 mm. In another embodiment, the via spacing (p) can be greater than or equal to 500 µm and less than or equal to 750 µm. In an embodiment, the via spacing (p) can be greater than or equal to 750 µm and less than or equal to 1 mm. In an embodiment, the via spacing (p) can be within any other range described above.

[0105] Still referencing Figure 3CIn an embodiment, via 262 defines a first waveguide width (a) of the first SIW 260, wherein the first waveguide width (a) of the first SIW 260 is the distance between the centers of vias in adjacent rows (e.g., the distance between the centers of the vias of the first plurality of vias 262A and the centers of the adjacent vias of the second plurality of vias 262B). For example, the waveguide width (a) may be the distance between the axis of a row of vias (e.g., a line passing through the center of each via in a row of vias) and the axis of an adjacent row of vias. Therefore, in an embodiment, the first waveguide width (a) of the first SIW 260 separates the first plurality of vias 262A from the second plurality of vias 262B. In an embodiment, the waveguide width (a) of the other SIWs of the first SIW 260 (e.g., depicted in Figures 2A-2D) may vary among these SIWs of the first SIW 260.

[0106] In one embodiment, the first waveguide width (a) of the first SIW 260 can be substantially equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the first SIW 260. In another embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the first SIW 260 minus 0.05 mm and less than or equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the first SIW 260 plus 0.05 mm. In yet another embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the first SIW 260 minus 0.1 mm and less than or equal to half the vacuum wavelength (λ) plus 0.1 mm. In one embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the first SIW 260 minus 0.15 mm and less than or equal to half the vacuum wavelength (λ) plus 0.15 mm. In another embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the first SIW 260 minus 0.2 mm and less than or equal to half the vacuum wavelength (λ) plus 0.2 mm. In yet another embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the first SIW 260 minus 0.25 mm and less than or equal to half the vacuum wavelength (λ) plus 0.25 mm. In yet another embodiment, the first waveguide width (a) of the first SIW 260 can be within any other range described above.

[0107] In one embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to 0.1 mm, greater than or equal to 0.5 mm, greater than or equal to 1 mm, greater than or equal to 2.5 mm, or even greater than or equal to 5 mm. In another embodiment, the first waveguide width (a) of the first SIW 260 can be less than or equal to 10 mm, less than or equal to 5 mm, less than or equal to 2.5 mm, less than or equal to 1 mm, or even less than or equal to 0.5 mm. In another embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to 0.1 mm and less than or equal to 10 mm. In another embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to 0.1 mm and less than or equal to 5 mm. In another embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to 0.1 mm and less than or equal to 2.5 mm. In another embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to 0.1 mm and less than or equal to 1 mm. In one embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to 0.1 mm and less than or equal to 0.5 mm. In another embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to 0.5 mm and less than or equal to 10 mm. In yet another embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to 0.5 mm and less than or equal to 5 mm. In yet another embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to 0.5 mm and less than or equal to 2.5 mm. In yet another embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to 0.5 mm and less than or equal to 1 mm. In yet another embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to 1 mm and less than or equal to 10 mm. In yet another embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to 1 mm and less than or equal to 5 mm. In one embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to 1 mm and less than or equal to 2.5 mm. In another embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to 2.5 mm and less than or equal to 10 mm. In yet another embodiment, the first waveguide width (a) of the first SIW 260 can be greater than or equal to 2.5 mm and less than or equal to 5 mm. In yet another embodiment, the first waveguide width (a) of the first SIW 260 can be within any other range described above.

[0108] Still referencing Figure 3CIn an embodiment, each through-hole in via 262 includes a through-hole diameter (d). In an embodiment, the through-hole diameter (d) of each through-hole in via 262 may be substantially constant. In an embodiment, the through-hole diameter (d) may vary between any, some, or all of the through-holes 262. In an embodiment, the through-hole diameter (d) of through-holes in different rows may be substantially equal. For example, in... Figure 3C In some embodiments, the through-hole diameter (d) of the through-hole 262 of the first plurality of through-holes 262A may be substantially equal to the through-hole diameter (d) of the through-hole 262 of the second row of through-holes 262B. However, in other embodiments, the through-hole diameter (d) of the through-holes of different rows of through-holes may not be substantially equal. For example, the through-hole diameter (d) of the through-hole 262 of the first plurality of through-holes 262A may be different from the through-hole diameter (d) of the through-hole 262 of the second plurality of through-holes 262B. Furthermore, in embodiments, the through-hole diameter (d) of the through-holes of the other SIWs of the first SIW 260 (e.g., depicted in Figures 2A-2D) may differ among these SIWs of the first SIW 260.

[0109] In some embodiments, the through-hole diameter (d) can be greater than or equal to 1 µm, greater than or equal to 10 µm, greater than or equal to 25 µm, greater than or equal to 50 µm, greater than or equal to 75 µm, greater than or equal to 100 µm, or even greater than or equal to 250 µm. In some embodiments, the through-hole diameter (d) can be less than or equal to 500 µm, less than or equal to 100 µm, less than or equal to 75 µm, less than or equal to 50 µm, less than or equal to 25 µm, or even less than or equal to 10 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 1 µm and less than or equal to 500 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 1 µm and less than or equal to 250 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 1 µm and less than or equal to 100 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 1 µm and less than or equal to 75 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 1 µm and less than or equal to 50 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 1 µm and less than or equal to 25 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 1 µm and less than or equal to 10 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 10 µm and less than or equal to 500 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 10 µm and less than or equal to 250 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 10 µm and less than or equal to 100 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 10 µm and less than or equal to 75 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 10 µm and less than or equal to 50 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 10 µm and less than or equal to 25 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 25 µm and less than or equal to 500 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 25 µm and less than or equal to 250 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 25 µm and less than or equal to 100 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 25 µm and less than or equal to 75 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 25 µm and less than or equal to 50 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 50 µm and less than or equal to 500 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 50 µm and less than or equal to 250 µm. In some embodiments, the through-hole diameter (d) can be greater than or equal to 50 µm and less than or equal to 100 µm.In one embodiment, the through-hole diameter (d) can be greater than or equal to 50 µm and less than or equal to 75 µm. In another embodiment, the through-hole diameter (d) can be greater than or equal to 75 µm and less than or equal to 500 µm. In yet another embodiment, the through-hole diameter (d) can be greater than or equal to 75 µm and less than or equal to 250 µm. In yet another embodiment, the through-hole diameter (d) can be greater than or equal to 75 µm and less than or equal to 100 µm. In yet another embodiment, the through-hole diameter (d) can be greater than or equal to 100 µm and less than or equal to 500 µm. In yet another embodiment, the through-hole diameter (d) can be greater than or equal to 100 µm and less than or equal to 250 µm. In yet another embodiment, the through-hole diameter (d) can be greater than or equal to 250 µm and less than or equal to 500 µm. In yet another embodiment, the through-hole diameter (d) can be within any other range described above.

[0110] Still referencing Figure 3C , Figure 3C The corresponding waveguide channel 310 of the first SIW 260 depicted in the image is shown in a superimposed manner. Therefore, due to the fact that in Figure 3C In some embodiments, the waveguide channel 310 may not be formed from the first substrate 250, therefore the waveguide channel 310 is depicted with dashed lines. The waveguide channel 310 may be positioned around the source electromagnetic wave transmission element 261 such that the waveguide channel 310 can guide electromagnetic waves to and / or from the first SIW 260 by extending from the rear side 114 of the source circuit board 110 toward the front side 112 of the source circuit board 110 (e.g., through the top layer 300 of the circuit board in an embodiment), such that the waveguide channel 310 extends to the first substrate 250. However, in embodiments (e.g., embodiments where the source circuit board 110 does not include the top layer 300 of the circuit board), the waveguide channel 310 may alternatively be formed from another layer (e.g., waveguide layer 400 in an embodiment).

[0111] Waveguide channel 310 limits the channel length (l) c ) and channel width (w c ).exist Figure 3C In the embodiment, the channel length (l c The first waveguide length (l) is parallel to the first SIW 260. However, in other embodiments, the channel length (l) is... c The first waveguide channel 310 may be substantially parallel to the first waveguide length (l) of the first SIW 260. Nevertheless, in embodiments, it is important that the waveguide channel 310 may be substantially rectangular in shape and positioned such that the channel length (l) is... c The channel length (l) may not be substantially perpendicular to the first waveguide length (l) of the first SIW 260. That is, in the embodiment, the channel length (l) cIt can be larger than the channel width (w) c The width of the first waveguide (a) can also be greater than the first waveguide width (a) of the first SIW 260. However, the “generally rectangular shape” as described herein should not be interpreted as requiring the waveguide channel 310 to be defined by only four straight edges. More precisely, as from Figure 3C As can be seen, waveguide channel 310 alternatively has rounded edges. This means that, in embodiments, the shape of waveguide channel 310 may be determined only by the channel length (l...). c ) greater than the channel width (w) c (restrictions).

[0112] In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2 mm, greater than or equal to 2.2 mm, greater than or equal to 2.4 mm, greater than or equal to 2.6 mm, greater than or equal to 2.8 mm, or even greater than or equal to 2.9 mm. In the embodiment, the channel length (l) c The channel length (l) can be less than or equal to 4 mm, less than or equal to 3.8 mm, less than or equal to 3.6 mm, less than or equal to 3.4 mm, less than or equal to 3.2 mm, or even less than or equal to 3.1 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2 mm and less than or equal to 4 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2 mm and less than or equal to 3.8 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2 mm and less than or equal to 3.6 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2 mm and less than or equal to 3.4 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2 mm and less than or equal to 3.2 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2 mm and less than or equal to 3.1 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.2 mm and less than or equal to 4 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.2 mm and less than or equal to 3.8 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.2 mm and less than or equal to 3.6 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.2 mm and less than or equal to 3.4 mm. In the embodiment, the channel length (l) cThe channel length (l) can be greater than or equal to 2.2 mm and less than or equal to 3.2 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.2 mm and less than or equal to 3.1 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.4 mm and less than or equal to 4 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.4 mm and less than or equal to 3.8 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.4 mm and less than or equal to 3.6 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.4 mm and less than or equal to 3.4 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.4 mm and less than or equal to 3.2 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.4 mm and less than or equal to 3.1 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.6 mm and less than or equal to 4 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.6 mm and less than or equal to 3.8 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.6 mm and less than or equal to 3.6 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.6 mm and less than or equal to 3.4 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.6 mm and less than or equal to 3.2 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.6 mm and less than or equal to 3.1 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.8 mm and less than or equal to 4 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.8 mm and less than or equal to 3.8 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.8 mm and less than or equal to 3.6 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.8 mm and less than or equal to 3.4 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.8 mm and less than or equal to 3.2 mm. In the embodiment, the channel length (l) cThe channel length (l) can be greater than or equal to 2.8 mm and less than or equal to 3.1 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.9 mm and less than or equal to 4 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.9 mm and less than or equal to 3.8 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.9 mm and less than or equal to 3.6 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.9 mm and less than or equal to 3.4 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.9 mm and less than or equal to 3.2 mm. In the embodiment, the channel length (l) c The channel length (l) can be greater than or equal to 2.9 mm and less than or equal to 3.1 mm. In the embodiment, the channel length (l) c It can be in any other range beyond the ranges mentioned above.

[0113] In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 0.5 mm, greater than or equal to 0.75 mm, greater than or equal to 1 mm, greater than or equal to 1.2 mm, or even greater than or equal to 1.4 mm. In the embodiment, the channel width (w) c The channel width (w) can be less than or equal to 2.5 mm, less than or equal to 2.25 mm, less than or equal to 2 mm, less than or equal to 1.8 mm, or even less than or equal to 1.6 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 0.5 mm and less than or equal to 2.5 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 0.5 mm and less than or equal to 2.25 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 0.5 mm and less than or equal to 2 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 0.5 mm and less than or equal to 1.8 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 0.5 mm and less than or equal to 1.6 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 0.75 mm and less than or equal to 2.5 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 0.75 mm and less than or equal to 2.25 mm. In the embodiment, the channel width (w) cThe channel width (w) can be greater than or equal to 0.75 mm and less than or equal to 2 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 0.75 mm and less than or equal to 1.8 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 0.75 mm and less than or equal to 1.6 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 1 mm and less than or equal to 2.5 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 1 mm and less than or equal to 2.25 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 1 mm and less than or equal to 2 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 1 mm and less than or equal to 1.8 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 1 mm and less than or equal to 1.6 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 1.2 mm and less than or equal to 2.5 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 1.2 mm and less than or equal to 2.25 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 1.2 mm and less than or equal to 2 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 1.2 mm and less than or equal to 1.8 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 1.2 mm and less than or equal to 1.6 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 1.4 mm and less than or equal to 2.5 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 1.4 mm and less than or equal to 2.25 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 1.4 mm and less than or equal to 2 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 1.4 mm and less than or equal to 1.8 mm. In the embodiment, the channel width (w) c The channel width (w) can be greater than or equal to 1.4 mm and less than or equal to 1.6 mm. In the embodiment, the channel width (w) c It can be in any other range beyond the ranges mentioned above.

[0114] Therefore, in an embodiment, waveguide channel 310 can enable the first SIW 260 to have a first waveguide width (a) smaller than the alternative potential waveguide width of the alternative potential SIW, which can be coupled to a waveguide channel having a channel length that can be substantially perpendicular to the waveguide length (l) of such alternative potential SIW. Thus, the size of the first SIW 260 can be reduced (e.g., by reducing the first waveguide width (a) of the first SIW 260 to a value within a range (e.g., any, some, or all of the ranges described above). By reducing the size of the first SIW 260, in an embodiment, the size of the first substrate 250 can also be reduced. By reducing the size of the first substrate 250, in an embodiment, the cost of manufacturing the first substrate 250 (and therefore, for example, the cost of manufacturing the source circuit board 110 and / or the circuit board underlayer 200) can be similarly reduced. Furthermore, in embodiments, waveguide channel 310 can reduce electrical losses of electromagnetic waves propagated and / or received by the first SIW 260 and / or source electromagnetic wave transmission element 261 by acting as a waveguide to guide electromagnetic waves to and / or from the first SIW 260. Finally, in embodiments, waveguide channel 310 enables the integrated digital RF circuit system 100 to be manufactured without inserting a layer (e.g., a redistribution layer, connector, or jumper) between the source board 110 and the antenna package 120, because waveguide channel 310 itself can provide a coupling mechanism between the source board 110 and the antenna package 120.

[0115] In an embodiment, the waveguide channel 310 may be at least partially positioned between the first plurality of vias 262A and the second plurality of vias 262B. Figure 3C In one embodiment, the waveguide channel 310 is depicted as being completely positioned between the plurality of vias 262A, 262B (that is, within the internal spacing (w)). However, in other embodiments, the waveguide channel 310 may have alternative dimensions, positions, or orientations such that the waveguide channel 310 overlaps with any, some, or all of the vias 262. In another embodiment, the waveguide channel 310 may have any size, position, or orientation such that the waveguide channel 310 can be positioned around the source electromagnetic wave transmission element 261 and has a channel length (l c It can be greater than the channel width (w) c The dimensions of the channel (w) are as follows. In this embodiment, the channel width (w) is... c The first waveguide length (l) of the first SIW 260 is parallel or substantially parallel to the first waveguide length (l) of the first SIW 260. Therefore, in the embodiment, this orientation of the waveguide channel 310 can make the source electromagnetic wave transmission element 261 similarly parallel or substantially parallel to the first waveguide length (l) of the first SIW 260.

[0116] In an embodiment, in order to propagate electromagnetic waves to and / or from the first SIW 260 and / or the source electromagnetic wave transmission element 261 (which, compared to, for example, alternative SIWs and / or electromagnetic wave transmission elements, may not be oriented substantially parallel to the first waveguide length (l) of the first SIW 260) and / or the source electromagnetic wave transmission element, the polarization of the electromagnetic waves propagated or received by the first SIW 260 and / or the source electromagnetic wave transmission element 261 can be rotated to accommodate the orientation of the source electromagnetic wave transmission element 261 and / or the waveguide channel 310. Furthermore, in an embodiment, electromagnetic waves propagated by another SIW and / or other electromagnetic wave transmission elements and received by the first SIW 260 and / or the source electromagnetic wave transmission element 261 can similarly be rotated in polarization to accommodate the orientation of the source electromagnetic wave transmission element 261 and / or the waveguide channel 310.

[0117] refer to Figure 4A The waveguide layer 400 includes a second substrate 410. In one embodiment, the waveguide layer 400 may not include any additional layers or substrates other than the second substrate 410. However, in other embodiments, the waveguide layer 400 may include... Figure 4A Additional layers or substrates not depicted. For example, in embodiments, waveguide layer 400 may define (i.e., form waveguide channel 310 as a gap within waveguide layer 400) waveguide channel 310 or include additional layers defining (i.e., form waveguide channel 310 as a gap within additional layers of waveguide layer 400) waveguide channel 310, and in some such embodiments, source board 110 may not include board top layer 300 or may not define waveguide channel 310. In embodiments, waveguide channel 310 may be waveguide layer 400 or a gap within a layer of waveguide layer 400. In embodiments, waveguide layer 400 may include a metal plating around the walls of waveguide channel 310. In embodiments, waveguide channel 310 may be a milled groove in waveguide layer 400.

[0118] The second substrate 410 includes a second SIW 420. Each of the second SIWs 420 includes a first packaged electromagnetic wave transmission element 421A, which in an embodiment can propagate one or more electromagnetic waves to and / or receive one or more electromagnetic waves from the source board 110 (via, for example, a corresponding source electromagnetic wave transmission element in source electromagnetic wave transmission element 261). In an embodiment, the second SIW 420 can propagate one or more electromagnetic waves from a corresponding second packaged electromagnetic wave transmission element 421B to a corresponding first packaged electromagnetic wave transmission element in the first packaged electromagnetic wave transmission element 421A and / or receive one or more electromagnetic waves from the corresponding first packaged electromagnetic wave transmission element to the corresponding second packaged electromagnetic wave transmission element. Thus, the second packaged electromagnetic wave transmission element 421B can propagate such electromagnetic waves to other wave transmission elements (e.g., antenna elements of antenna layer 500, e.g., such as...). Figure 5 (As depicted in the diagram and described further in detail below) and / or receive such electromagnetic waves from other wave transmission elements. Therefore, waveguide layer 400, second SIW 420, and packaged electromagnetic wave transmission elements 421A, 421B can thereby electrically couple any, some, or all of the respective SIWs in the source circuit board 110, integrated circuit 270, first SIW 260, and / or the respective source electromagnetic wave transmission elements in the source electromagnetic wave transmission element 261, such that one or more electromagnetic waves can be transmitted between them. In an embodiment, the first packaged electromagnetic wave transmission element 421A may include, for example, a grounded coplanar waveguide, a microstrip transmission line, a patch element (e.g., a patch antenna), a slot antenna, an RF chip, or any combination thereof. In an embodiment, the second packaged electromagnetic wave transmission element 421B may include, for example, a grounded coplanar waveguide, a microstrip transmission line, a patch element (e.g., a patch antenna), a slot antenna, an RF chip, or any combination thereof.

[0119] exist Figure 4A In one embodiment, the second substrate 410 includes seven second SIWs 420. However, in other embodiments, the second substrate 410 may include any number of second SIWs 420, including two, three, or even four or more second SIWs 420. In one embodiment, the second substrate 410 may include only one second SIW 420. In another embodiment, the second substrate 410 may include a number of second SIWs 420 equal to the number of first SIWs 260 on the first substrate 260.

[0120] exist Figure 4A In one embodiment, each of the second SIWs in the second SIW 420 includes only a through-hole 422 located in each of the second SIWs in the second SIW 420 (e.g., Figure 4BThe first packaged electromagnetic wave transmission element 421A is depicted in the diagram and described in further detail below. However, in other embodiments, each second SIW in the second SIW 420 may include a plurality of first packaged electromagnetic wave transmission elements 421A positioned between vias 422 of each second SIW in the second SIW 420, for example, two first packaged electromagnetic wave transmission elements 421A, three first packaged electromagnetic wave transmission elements 421A, or even four or more first packaged electromagnetic wave transmission elements 421A. In embodiments, any, some, or all of the second SIW 420 may have a different number of first packaged electromagnetic wave transmission elements 421A positioned between vias 422 of each second SIW in the second SIW 420.

[0121] exist Figure 4A In one embodiment, each of the second SIWs in the second SIW 420 includes a through-hole 422 located in each of the second SIWs in the second SIW 420 (e.g., Figure 4B The six second packaged electromagnetic wave transmission elements 421B are depicted in the diagram and described in further detail below. However, in other embodiments, each second SIW in the second SIW 420 may include any plurality of second packaged electromagnetic wave transmission elements 421B positioned between the vias 422 of each second SIW in the second SIW 420, for example, two second packaged electromagnetic wave transmission elements 421B, three second packaged electromagnetic wave transmission elements 421B, or even four or more second packaged electromagnetic wave transmission elements 421B. In embodiments, each second SIW in the second SIW 420 may include only one second packaged electromagnetic wave transmission element 421B positioned between the vias 422 of each second SIW in the second SIW 420. In embodiments, any, some, or all of the second SIW 420 may have different numbers of second packaged electromagnetic wave transmission elements 421B positioned between the vias 422 of each second SIW in the second SIW 420.

[0122] Therefore, in an embodiment, each waveguide channel in the waveguide channel 310 can be positioned such that when the source circuit board 110 and the waveguide layer 400 are attached, each waveguide channel 310 is positioned around a corresponding first packaged electromagnetic wave transmission element in the first packaged electromagnetic wave transmission element 421A. Thus, in an embodiment, the waveguide channel 310 can act as a connection mechanism (e.g., a coupler) that can electrically couple the first packaged electromagnetic wave transmission element 421A to other electromagnetic wave transmission elements, such as the source electromagnetic wave transmission element 261 (e.g., depicted in Figures 2A-3C and described further in detail above), so that the first packaged electromagnetic wave transmission element 421A can propagate electromagnetic waves to and / or receive electromagnetic waves from such other electromagnetic wave transmission elements. Therefore, such electromagnetic waves can be guided through the waveguide channel 310 between the first packaged electromagnetic wave transmission element 421A and such other electromagnetic wave transmission elements, and the waveguide channel 310 itself can be radiated, thereby reducing, for example, the electrical loss of electromagnetic waves between the first packaged electromagnetic wave transmission element 421A and such other electromagnetic wave transmission elements. Waveguide channel 310 can thus serve as a waveguide for electromagnetic waves between the first packaged electromagnetic wave transmission element 421A and other source electromagnetic wave transmission elements.

[0123] In embodiments, the second substrate 410 may be partially or entirely formed of one or more dielectric materials. In embodiments, the dielectric material forming the second substrate 410 may include glass (in embodiments, any, some, or all of lithium potassium borosilicate glass, silica glass, ion-exchange glass, and / or inorganic glass), ceramics (in embodiments, any, some, or all of polycrystalline ceramics, polycrystalline inorganic materials, polycrystalline alumina, alumina, and / or silica), glass-ceramics (in embodiments, Corning 9606® cordierite glass-ceramics), polymers (in embodiments, polycarbonate, ceramic-filled PTFE composites, and / or Topas®), polycrystalline ceramics, single-crystal ceramics (in embodiments, sapphire), and / or any combination thereof. In embodiments, the dielectric material forming the second substrate 410 may include organic and / or inorganic materials. In embodiments, the second substrate 410 may be formed partially or entirely of a variety of dielectric materials, and in some such embodiments, the various dielectric materials may include a variety of organic materials, a variety of inorganic materials, and / or any combination of one or more organic materials and one or more inorganic materials. In embodiments where the second substrate 410 is formed partially or entirely of a variety of dielectric materials, the various dielectric materials may form separate layers of the second substrate 410. In embodiments, one or more laminating materials may be applied to the second substrate 410 to, for example, reduce the dielectric constant of the second substrate 410.

[0124] refer to Figure 4B An exemplary second SIW in the second SIW 420 may be defined by through-holes 422, the through-holes including a third plurality of through-holes 422A (arranged in a first row) and a fourth plurality of through-holes 422B (arranged in a second row), wherein the third plurality of through-holes 422A and the fourth plurality of through-holes 422B define an internal spacing (w) between the internal edges of the plurality of through-holes 422A, 422B. In an embodiment, Figure 4A Each of the second SIWs in the second SIW 420 can be substantially similar to Figure 4B The exemplary second SIW 420 is depicted herein. However, as described elsewhere in this document, Figure 4A Any, some, or all of the second SIW 420 may differ from, for example, by having a different number of through holes 422, having a different number of first packaged electromagnetic wave transmission elements 421A positioned between the through holes 422, and / or in other aspects. Figure 4B The exemplary second SIW 420 depicted herein is as described elsewhere. In embodiments, any, some, or all of the vias 422 may extend at least partially through the second substrate 410. In embodiments, any, some, or all of the vias 422 may extend completely through the second substrate 410. Figure 4B In one embodiment, the through holes 422 are arranged in two rows (e.g., a third plurality of through holes 422A and a fourth plurality of through holes 422B). However, in other embodiments, the through holes 422 can be arranged in any number of rows, including three, four, or even five or more rows in the embodiments. Figure 4B In one embodiment, the second SIW 420 includes 27 through holes. However, in other embodiments, the second SIW 420 may alternatively include 10 or more through holes 422, 100 or more through holes 422, 250 or more through holes 422, 500 or more through holes 422, or even 1,000 or more through holes 422.

[0125] In an embodiment, the second SIW 420 may propagate and / or be configured to propagate electromagnetic waves comprising a frequency (f) and a vacuum wavelength (λ), and the frequency (f) and vacuum wavelength (λ) may be within the range described above with respect to the frequency and / or vacuum wavelength of the electromagnetic waves propagated by the first SIW 260. In an embodiment, the second SIW 420 may propagate and / or be configured to propagate electromagnetic waves along and / or parallel to a second waveguide length (l) between each of the plurality of vias 422A, 422B of the second SIW 420, wherein the second waveguide length (l) of the second SIW 420 extends along the propagation direction of the electromagnetic waves through the second SIW 420. In embodiments having more than two rows of vias 422, each additional row of vias 422 may further define an additional waveguide along which additional electromagnetic waves may propagate.

[0126] In an embodiment, similar to via 262 of the first SIW 260, via 422 defines a via spacing (p). In an embodiment, the via spacing (p) between different rows of vias may be substantially constant. For example, in Figure 4B In one embodiment, the via spacing (p) defined by the third plurality of vias 422A can be substantially equal to the via spacing (p) defined by the fourth plurality of vias 422B. However, in other embodiments, the via spacing (p) across different rows of vias may not be substantially constant. For example, in one embodiment, the third plurality of vias 422A can define a via spacing (p) with a length different from the via spacing (p) defined by the fourth plurality of vias 422B. Furthermore, in one embodiment, the second SIW 420 (e.g., as...) Figure 4A The via spacing (p) of the other SIWs (described in the text) may vary between these SIWs of the second SIW 420. In an embodiment, the via spacing (p) defined by via 422 may be within the range described above with respect to the via spacing (p) of the first SIW 260.

[0127] In an embodiment, via 422 defines a second waveguide width (a) of the second SIW 420. Therefore, in an embodiment, the second waveguide width (a) of the second SIW 420 separates the third plurality of vias 422A from the fourth plurality of vias 422B. In an embodiment, the second waveguide width (a) of the second SIW 420 may be substantially equal to half the vacuum wavelength (λ) of the electromagnetic wave propagating by the second SIW 420. Furthermore, in an embodiment, the waveguide widths (a) of the other SIWs of the second SIW 420 (e.g., depicted in Figures 2A-2D) may vary among these SIWs of the second SIW 420. In an embodiment, the second waveguide width (a) of the second SIW 420 may be within a range such as that described above regarding the first waveguide width (a) of the first SIW 260.

[0128] In one embodiment, the second waveguide width (a) of the second SIW 420 can be substantially equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the second SIW 420. In another embodiment, the second waveguide width (a) of the second SIW 420 can be greater than or equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the second SIW 420 minus 0.05 mm and less than or equal to half the vacuum wavelength (λ) plus 0.05 mm. In yet another embodiment, the second waveguide width (a) of the second SIW 420 can be greater than or equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the second SIW 420 minus 0.1 mm and less than or equal to half the vacuum wavelength (λ) plus 0.1 mm. In yet another embodiment, the second waveguide width (a) of the second SIW 420 can be greater than or equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the second SIW 420 minus 0.15 mm and less than or equal to half the vacuum wavelength (λ) plus 0.15 mm. In one embodiment, the second waveguide width (a) of the second SIW 420 can be greater than or equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the second SIW 420 minus 0.2 mm and less than or equal to half the vacuum wavelength (λ) plus 0.2 mm. In another embodiment, the second waveguide width (a) of the second SIW 420 can be greater than or equal to half the vacuum wavelength (λ) of the electromagnetic wave propagated by the second SIW 420 minus 0.25 mm and less than or equal to half the vacuum wavelength (λ) plus 0.25 mm. In yet another embodiment, the second waveguide width (a) of the second SIW 420 can be within any other range described above.

[0129] In an embodiment, each through-hole in via 422 includes a through-hole diameter (d). In an embodiment, the through-hole diameter (d) of each through-hole in via 422 may be substantially constant. In an embodiment, the through-hole diameter (d) may vary between any, some, or all of the through-holes 422. In an embodiment, the through-hole diameter (d) of through-holes in different rows may be substantially equal. However, in other embodiments, the through-hole diameter (d) of through-holes in different rows may not be substantially equal. Furthermore, in an embodiment, the second SIW 420 (e.g., as...) Figure 4A The via diameter (d) of the other SIWs (described in the figure) may vary between these SIWs of the second SIW 420. In an embodiment, the via diameter (d) of via 422 may be within the range described above for via diameter (d) of via 262.

[0130] Still referencing Figure 4B , Figure 4B The corresponding waveguide channel 310 of the second SIW 420 depicted in the figure is shown in a superimposed manner. Therefore, due to the fact that in Figure 4B In some embodiments, the waveguide channel 310 may not be formed by the second substrate 410, therefore the waveguide channel 310 is depicted with dashed lines. The waveguide channel 310 may be positioned around the first packaged electromagnetic wave transmission element 421A such that the waveguide channel 310 can guide electromagnetic waves to and / or guide electromagnetic waves from the second SIW 420 by extending from the source circuit board 110 to the second substrate 410 (e.g., through the top layer 300 of the circuit board or through another layer or substrate of the waveguide layer 400 in an embodiment).

[0131] Therefore, in an embodiment, waveguide channel 310 can enable the second SIW 420 to have a second waveguide width (a) smaller than the alternative potential waveguide width of the alternative potential SIW, which can be coupled to a waveguide channel having a channel length that can be substantially perpendicular to the waveguide length (l) of such alternative potential SIW. Thus, the size of the second SIW 420 can be reduced (e.g., by reducing the second waveguide width (a) of the second SIW 420 to a value within a range (e.g., any, some, or all of the ranges described above). By reducing the size of the second SIW 420, in an embodiment, the size of the second substrate 410 can also be reduced. By reducing the size of the second substrate 410, in an embodiment, the cost of manufacturing the second substrate 410 (and therefore, for example, the cost of manufacturing the waveguide layer 400) can be similarly reduced. Furthermore, in the embodiments, the waveguide channel 310 can reduce the electrical loss of electromagnetic waves propagated and / or received by the second SIW 420 and / or the first packaged electromagnetic wave transmission element 421A by acting as a waveguide to guide electromagnetic waves to and / or from the second SIW 420.

[0132] In an embodiment, the waveguide channel 310 may be at least partially positioned between the third plurality of vias 422A and the fourth plurality of vias 422B. Figure 4B In one embodiment, the waveguide channel 310 is depicted as being completely positioned between the plurality of vias 422A, 422B (that is, within the internal spacing (w)). However, in other embodiments, the waveguide channel 310 may have alternative dimensions, positions, or orientations such that the waveguide channel 310 overlaps with any, some, or all of the vias 422. In another embodiment, the waveguide channel 310 may have any size, position, or orientation such that the waveguide channel 310 can be positioned around the first packaged electromagnetic wave transmission element 421A and has a channel length (l c It can be greater than the channel width (w) c The dimensions of the channel (w) are as follows. In this embodiment, the channel width (w) is... c The first packaged electromagnetic wave transmission element 421A is parallel to or substantially parallel to the second waveguide length (l) of the second SIW 420. Therefore, in the embodiment, this orientation of the waveguide channel 310 can make the first packaged electromagnetic wave transmission element 421A similarly parallel to or substantially parallel to the second waveguide length (l) of the second SIW 420.

[0133] In an embodiment, in order to propagate electromagnetic waves to and / or from the first SIW 260 and / or the source electromagnetic wave transmission element 261 (which, compared to, for example, an alternative SIW and / or electromagnetic wave transmission element, may not be oriented substantially parallel to the second waveguide length (l) of the second SIW 420) and / or the source electromagnetic wave transmission element, the polarization of the electromagnetic waves propagated or received by the first SIW 260 and / or the source electromagnetic wave transmission element 261 can be rotated to accommodate the orientation of the source electromagnetic wave transmission element 261 and / or the waveguide channel 310. Furthermore, in an embodiment, electromagnetic waves propagated by another SIW and / or other electromagnetic wave transmission elements and received by the first SIW 260 and / or the source electromagnetic wave transmission element 261 can similarly be rotated in polarization to accommodate the orientation of the source electromagnetic wave transmission element 261 and / or the waveguide channel 310.

[0134] refer to Figure 3C and 4B In an embodiment, the waveguide channel 310 can be sized, oriented, and / or positioned such that the waveguide channel 310 is positioned around both the source electromagnetic wave transmission element 261 and the first packaged electromagnetic wave transmission element 421A. Therefore, in an embodiment, the waveguide channel 310 can form a waveguide between the electromagnetic wave transmission elements 261, 421A and / or SIW 260, 420, thereby enabling either or both of the electromagnetic wave transmission elements 261, 421A to propagate electromagnetic waves to and / or receive electromagnetic waves from the other electromagnetic wave transmission element 261, 421A. The waveguide channel 310 can thus provide a coupler between the electromagnetic wave transmission elements 261, 421A and reduce electrical losses of the electromagnetic waves propagating therebetween. Therefore, in an embodiment, the channel length (l) c The channel length (l) can be greater than both the first waveguide width (a) of the first SIW 260 and the second waveguide width (a) of the second SIW 420, such that in the embodiment, the channel length (l) cThe waveguide channel 310 is parallel to or substantially parallel to both the first waveguide length (l) of the first SIW 260 and the second waveguide length (l) of the second SIW 420. Furthermore, in an embodiment, the waveguide channel 310 can be at least partially located between the first plurality of vias 262A and the second plurality of vias 262B, and also at least partially located between the third plurality of vias 422A and the fourth plurality of vias 422B. In an embodiment, the waveguide channel 310 can be completely located between the first plurality of vias 262A and the second plurality of vias 262B, and also completely located between the third plurality of vias 422A and the fourth plurality of vias 422B. In an embodiment, the waveguide channel 310 can be at least partially located between the first plurality of vias 262A and the second plurality of vias 262B, and also completely located between the third plurality of vias 422A and the fourth plurality of vias 422B. In the embodiment, the waveguide channel 310 can be completely positioned between the first plurality of through holes 262A and the second plurality of through holes 262B, and can also be at least partially positioned between the third plurality of through holes 422A and the fourth plurality of through holes 422B.

[0135] However, in other embodiments, any, some or all, of the source circuit board 110, antenna package 120, bottom circuit board 200, top circuit board 300 and / or waveguide layer 400 may be manufactured separately from any, some or all, of such other components of the integrated digital RF circuit system 100. Therefore, in embodiments, the waveguide channel 310 may be parallel only to or substantially parallel to one of the first waveguide length (l) of the first SIW 260 and the second waveguide length (l) of the second SIW 420, and not both. Therefore, in embodiments, the waveguide channel 310 may be positioned only around the source electromagnetic wave transmission element 261 and / or the first SIW 260, such that, for example, the channel length (l) is... c The first waveguide width (a) of the first SIW 260 is greater than that of the first SIW 260. In an embodiment, the waveguide channel 310 may be positioned only around the first packaged electromagnetic wave transmission element 421A and / or the second SIW 420, such that, for example, the channel length (l) is greater than that of the first waveguide width (a) of the first SIW 260. c (a) is greater than the second waveguide width (a) of the second SIW 420.

[0136] Now refer to Figures 2A-3B and Figure 4AIn an embodiment, each first SIW in the first SIW 260 and a corresponding source electromagnetic wave transmission element in the source electromagnetic wave transmission element 261 may correspond to a corresponding waveguide channel in the waveguide channel 310, and thus propagate and / or receive electromagnetic waves through the corresponding waveguide channel. Therefore, in such embodiments, each waveguide channel in the waveguide channel 310 may be sized, oriented, and / or positioned around the corresponding source electromagnetic wave transmission element in the source electromagnetic wave transmission element 261, and / or parallel to or substantially parallel to the first waveguide length (l) of the corresponding first SIW in the first SIW 260, such that, in an embodiment, the channel length (l) of each waveguide channel 310 is... c The first waveguide width (a) of the corresponding first SIW in the first SIW 260 is greater than that of the first waveguide in the first SIW 260. Similarly, in an embodiment, each waveguide channel in the waveguide channel 310 may be at least partially located between a first plurality of vias 262A and a second plurality of vias 262B of the corresponding first SIW in the first SIW 260, and at least partially located between a third plurality of vias 422A and a fourth plurality of vias 422B of the corresponding second SIW in the second SIW 420. However, in an embodiment, only some of the corresponding source electromagnetic wave transmission elements in the first SIW 260 and the source electromagnetic wave transmission elements 261 may correspond to the corresponding waveguide channels in the waveguide channel 310, and thereby propagate and / or receive electromagnetic waves through the corresponding waveguide channels. Therefore, in the embodiments, each or some waveguide channels in waveguide channels 310 may be sized, oriented, and / or positioned around a corresponding source electromagnetic wave transmission element in source electromagnetic wave transmission element 261, and / or parallel to or substantially parallel to the first waveguide length (l) of the corresponding first SIW in the first SIW 260, such that, in the embodiments, the channel length (l) of each waveguide channel 310 is... cThe first waveguide width (a) of the corresponding first SIW in the first SIW 260 is greater than that of the first waveguide in the first SIW 260. Similarly, in embodiments, some waveguide channels in waveguide channel 310 may be at least partially located between a first plurality of vias 262A and a second plurality of vias 262B of only some of the first SIWs in the first SIW 260, and at least partially located between a third plurality of vias 422A and a fourth plurality of vias 422B of only some of the second SIWs in the second SIW 420. In some such embodiments, some of the first SIWs and source electromagnetic wave transmission elements in the first SIW 260 and the source electromagnetic wave transmission element 261 may not propagate or receive electromagnetic waves through the corresponding waveguide channels in waveguide channel 310. Furthermore, in embodiments, only one corresponding source electromagnetic wave transmission element in the first SIW 260 and the source electromagnetic wave transmission element 261 may correspond to the corresponding waveguide channel in waveguide channel 310, and thereby propagate and / or receive electromagnetic waves through the corresponding waveguide channel. Therefore, in an embodiment, only one waveguide channel in waveguide channel 310 may be sized, oriented, and / or positioned around a corresponding source electromagnetic wave transmission element in source electromagnetic wave transmission element 261, and / or parallel to or substantially parallel to the first waveguide length (l) of the corresponding first SIW in the first SIW 260, such that in an embodiment, the channel length (l) of each waveguide channel 310 is... c The first waveguide width (a) of the first SIW 260 is greater than the first waveguide width (a) of the corresponding first SIW in the first SIW 260. Similarly, in an embodiment, only one waveguide channel in waveguide channel 310 may be at least partially located between a first plurality of vias 262A and a second plurality of vias 262B of only one first SIW in the first SIW 260, and at least partially located between a third plurality of vias 422A and a fourth plurality of vias 422B of only one second SIW in the second SIW 420. In some such embodiments, the remaining first SIWs and source electromagnetic wave transmission elements in the first SIW 260 and the source electromagnetic wave transmission element 261 may not propagate or receive electromagnetic waves through the corresponding waveguide channels in waveguide channel 310.

[0137] Still referring to Figures 2A-3B and Figure 4AIn an embodiment, each second SIW in the second SIW 420 and a corresponding first packaged electromagnetic wave transmission element in the first packaged electromagnetic wave transmission element 421A can correspond to a corresponding waveguide channel in the waveguide channel 310, and thereby propagate and / or receive electromagnetic waves through the corresponding waveguide channel. Therefore, in such embodiments, each waveguide channel in the waveguide channel 310 can be sized, oriented, and / or positioned around the corresponding first packaged electromagnetic wave transmission element in the first packaged electromagnetic wave transmission element 421A, and / or parallel to or substantially parallel to the second waveguide length (l) of the corresponding second SIW in the second SIW 420, such that in an embodiment, the channel length (l) of each waveguide channel 310 is... c The second waveguide width (a) of the corresponding second SIW in the second SIW 420 is greater than that of the second waveguide in the second SIW 420. However, in embodiments, only some of the second SIWs 420 and the corresponding first packaged electromagnetic wave transmission elements in the first packaged electromagnetic wave transmission element 421A can correspond to the corresponding waveguide channels in the waveguide channels 310, and thereby propagate and / or receive electromagnetic waves through the corresponding waveguide channels. Therefore, in such embodiments, each or some of the waveguide channels in the waveguide channels 310 can be sized, oriented, and / or positioned around the corresponding first packaged electromagnetic wave transmission element in the first packaged electromagnetic wave transmission element 421A, and / or parallel to or substantially parallel to the second waveguide length (l) of the corresponding second SIW in the second SIW 420, such that in embodiments, the channel length (l) of each waveguide channel 310 is greater than that of the corresponding first packaged electromagnetic wave transmission element in the first packaged electromagnetic wave transmission element 421A. c The second waveguide width (a) of the corresponding second SIW in the second SIW 420 is greater than that of the second waveguide in the second SIW 420. In some such embodiments, some of the second SIWs and first packaged electromagnetic wave transmission elements in the second SIW 420 and the first packaged electromagnetic wave transmission element 421A may not propagate or receive electromagnetic waves through the corresponding waveguide channel in the waveguide channel 310. Furthermore, in embodiments, only one corresponding first packaged electromagnetic wave transmission element in the second SIW 420 and the first packaged electromagnetic wave transmission element 421A may correspond to the corresponding waveguide channel in the waveguide channel 310, and thereby propagate and / or receive electromagnetic waves through the corresponding waveguide channel. Therefore, in such embodiments, only one waveguide channel in the waveguide channel 310 may be sized, oriented, and / or positioned around the corresponding first packaged electromagnetic wave transmission element in the first packaged electromagnetic wave transmission element 421A, and / or parallel to or substantially parallel to the second waveguide length (l) of the corresponding second SIW in the second SIW 420, such that in embodiments, the channel length (l) of each waveguide channel 310 is greater than that of the corresponding second SIW in the second SIW 420. cThe second waveguide width (a) is greater than that of the corresponding second SIW in the second SIW 420. In some such embodiments, the remaining second SIWs and first packaged electromagnetic wave transmission elements in the second SIW 420 and the first packaged electromagnetic wave transmission element 421A may not propagate or receive electromagnetic waves through the corresponding waveguide channels in the waveguide channel 310.

[0138] refer to Figure 5 Antenna layer 500 includes antenna element 510. In an embodiment, antenna element 510 may be positioned on the side of antenna layer 500 opposite to the side attached to spacer layer 450. In an embodiment, antenna element 510 may include, for example, a grounded coplanar waveguide, a microstrip transmission line, a patch element (e.g., a patch antenna), a slot antenna, an RF chip, or any combination thereof. In an embodiment, antenna element 510 may receive electromagnetic waves from the environment and / or transmit electromagnetic waves to the environment. Therefore, in an embodiment, antenna element 510 may act as a radar device, an electromagnetic communication device (e.g., having an external transceiver and receiver), or other such device that communicates or otherwise collects information by emitting electromagnetic waves to and / or receiving electromagnetic waves from the environment or other devices.

[0139] In an embodiment, antenna element 510 can propagate electromagnetic waves to and / or receive electromagnetic waves from one or more corresponding second-packaged electromagnetic wave transmission elements in the second-packaged electromagnetic wave transmission element 421B. Therefore, in an embodiment, antenna element 510 can receive one or more electromagnetic waves from the second-packaged electromagnetic wave transmission element 421B and transmit the electromagnetic waves to the environment and / or external devices. Similarly, in an embodiment, antenna element 510 can receive electromagnetic waves from the environment and / or external devices and transmit the electromagnetic waves to the second-packaged electromagnetic wave transmission element 421B. In an embodiment, antenna layer 500 can be formed of glass or other optically transparent or substantially optically transparent materials. Therefore, in an embodiment, one or more electromagnetic waves transmitted between antenna element 510 and the second-packaged electromagnetic wave transmission element 421B can propagate through both spacer layer 450 and antenna layer 500, because in some such embodiments, antenna element 510 can be positioned on the side of antenna layer 500 opposite to the side of antenna layer 500 attached to spacer layer 450.

[0140] exist Figure 5 In one embodiment, antenna layer 500 includes 48 antenna elements 510. However, in other embodiments, antenna layer 500 may include any number of antenna elements 510. In one embodiment, antenna layer 500 may include only one antenna element 510. In another embodiment, antenna layer 500 may include an antenna element 510 in a number equal to the number of second packaged electromagnetic wave transmission elements 421B of waveguide layer 400.

[0141] refer to Figure 4A and 5 Each antenna element in antenna element 510 may correspond to a corresponding second-packaged electromagnetic wave transmission element in second-packaged electromagnetic wave transmission element 421B. In an embodiment, any, some, or all of antenna elements 510 may correspond to a plurality of second-packaged electromagnetic wave transmission elements 421B. Therefore, in an embodiment, each second-packaged electromagnetic wave transmission element in second-packaged electromagnetic wave transmission element 421B may propagate electromagnetic waves (e.g., through spacer layer 450) to and / or receive electromagnetic waves from a corresponding one or more antenna elements in antenna element 510. Similarly, in an embodiment, each antenna element in antenna element 510 may propagate electromagnetic waves (e.g., through spacer layer 450) to and / or receive electromagnetic waves from a corresponding one or more second-packaged electromagnetic wave transmission elements in second-packaged electromagnetic wave transmission element 421B. Therefore, in this embodiment, when the antenna layer 500, the spacer layer 450, and the waveguide layer 400 are attached, each antenna element in the antenna element 510 can be positioned above a corresponding second packaged electromagnetic wave transmission element in the second packaged electromagnetic wave transmission element 421B (e.g., in...). Figure 1 (and / or 4 axes in the +z direction).

[0142] Therefore, refer to Figure 12A, 2C, 3A, 4A, and 5, the integrated digital RF circuit system 100, in embodiments, can operate by propagating and / or receiving one or more electromagnetic wave signals via various components, for example, positioned between integrated circuit 270 and antenna element 510. For example, electromagnetic waves can be transmitted by integrated circuit 270 via microstrip transmission line 271, after which the electromagnetic wave signal can propagate through a first SIW 260 to a source electromagnetic wave transmission element 261, which then transmits the electromagnetic wave signal through waveguide channel 310 to a first packaged electromagnetic wave transmission element 421A, after which the electromagnetic wave signal can propagate through a second SIW 420 to a second packaged electromagnetic wave transmission element 421B, which can then transmit the electromagnetic wave signal to antenna element 510, whereby the antenna element can thereby transmit the electromagnetic wave signal to the environment and / or external devices. Similarly, in this embodiment, antenna element 510 can receive electromagnetic wave signals and transmit them to a second packaged electromagnetic wave transmission element 421B. The electromagnetic wave signals can then propagate through a second SIW 420 to a first packaged electromagnetic wave transmission element 421A. The first packaged electromagnetic wave transmission element can transmit the electromagnetic wave signals to a source electromagnetic wave transmission element 261 via a waveguide channel 310. The electromagnetic wave signals can then propagate through a first SIW 260 to a microstrip transmission line 271, which in turn transmits the electromagnetic wave signals to an integrated circuit 270.

[0143] In an embodiment, the source circuit board 110 can operate by propagating and / or receiving electromagnetic wave signals through the waveguide channel 310 via various components, for example, positioned between the waveguide channel 310 and the integrated circuit 270. For example, electromagnetic waves can be transmitted by the integrated circuit 270 via a microstrip transmission line 271, after which the electromagnetic wave signal can propagate through a first SIW 260 to a source electromagnetic wave transmission element 261, which can then transmit the electromagnetic wave signal through the waveguide channel 310. Similarly, in an embodiment, the source electromagnetic wave transmission element 261 can receive electromagnetic wave signals through the waveguide channel 310, after which the electromagnetic wave signal can propagate through the first SIW 260 to the microstrip transmission line 271, whereby the microstrip transmission line can transmit the electromagnetic wave signal to the integrated circuit 270.

[0144] In an embodiment, the antenna package 120 can operate by propagating and / or receiving one or more electromagnetic wave signals through the waveguide channel 310 via various components, for example, positioned between the waveguide channel 310 and the antenna element 510. For example, a first packaged electromagnetic wave transmission element 421A can receive electromagnetic waves through the waveguide channel 310, after which the electromagnetic wave signal can propagate through a second SIW 420 to a second packaged electromagnetic wave transmission element 421B, which can then transmit the electromagnetic wave signal to the antenna element 510, thereby transmitting the electromagnetic wave signal to the environment and / or external devices. Similarly, in an embodiment, the antenna element 510 can receive electromagnetic wave signals, which can then transmit the electromagnetic wave signals to a second packaged electromagnetic wave transmission element 421B, after which the electromagnetic wave signal can propagate through the second SIW 420 to the first packaged electromagnetic wave transmission element 421A, which can then transmit the electromagnetic wave signal through the waveguide channel 310.

[0145] Figure 6 Describes the fabrication of integrated digital RF circuit systems (such as...) Figure 1-5 The flowchart illustrates a first illustrative method 600 for the fabrication of an integrated digital RF circuit system 100 described herein. While the first method 600 generally relates to the fabrication of the integrated digital RF circuit system described herein, it should be understood that similar processes can be used for other integrated digital RF circuit systems, and only a portion of the first method 600 can be used for other integrated digital RF circuit systems, source boards, antenna packages, and waveguide channels (e.g., as described herein). Figure 1-5 The described source circuit board 110, antenna package 120 and / or waveguide channel 310, although no steps are related to the components of this integrated digital RF circuit system.

[0146] refer to Figure 6Referring to Figures 2A-3C, the first method 600 includes forming a source circuit board 110, the source circuit board including a waveguide channel 310 defined by the source circuit board 110 and a first substrate 250 including a first SIW 260, as depicted in block 610. In an embodiment, the first SIW 260 may include a first waveguide length (l) and a first waveguide width (a). In an embodiment, the first SIW 260 may include a first plurality of vias 262A disposed along the first waveguide length (l) of the first SIW 260. In an embodiment, each via 262 of the first plurality of vias 262A may extend at least partially through the first substrate 250. In an embodiment, the first SIW 260 may include a second plurality of vias 262B disposed along the first waveguide length (l) of the first SIW 260. In an embodiment, each via 262 of the second plurality of vias 262B may extend at least partially through the first substrate 250. In an embodiment, the first plurality of vias 262A and the second plurality of vias 262B can be separated by a first waveguide width (a) of the first SIW 260. In an embodiment, the source circuit board 110 may include a front side 112. In an embodiment, the source circuit board 110 may include a rear side 114 opposite to the front side 112. In an embodiment, the waveguide channel 310 can guide electromagnetic waves to and / or from the first SIW 260. In an embodiment, the waveguide channel 310 can extend from the rear side 114 toward the front side 112. In an embodiment, the waveguide channel 310 can define a channel length (l c ) and channel width (w c In the embodiment, the channel length (l) c It can be greater than the channel width (w) c In the embodiment, the channel length (l) c The first waveguide width (a) of the first SIW 260 can be greater than that of the first SIW 260. In an embodiment, the waveguide channel 310 can be at least partially located between the first plurality of vias 262A and the second plurality of vias 262B. In an embodiment, the first substrate 250 can include a source electromagnetic wave transmission element 261. In an embodiment, the waveguide channel 310 can be located around the source electromagnetic wave transmission element 261. In an embodiment, the waveguide channel 310 can be positioned parallel to or substantially parallel to the first waveguide length (l) of the first SIW 260.

[0147] Refer again Figure 6 And refer to Figure 1 and 5 The first method 600 includes attaching the antenna layer 500 to the spacer layer 450, as depicted in block 620.

[0148] Refer again Figure 6 And refer to Figure 1 and 5 The first method 600 includes attaching a spacer layer 450 to a waveguide layer 400, as depicted in block 630. In an embodiment, the spacer layer 450 may be positioned between the waveguide layer 400 and the antenna layer 500. In an embodiment, the waveguide layer 400 may be positioned between the spacer layer 450 and the source circuit board 110.

[0149] Refer again Figure 6 And refer to Figure 1 and 4A The first method 600 includes attaching the waveguide layer 400 to the rear side 114 of the source circuit board 110, as depicted in block 640.

[0150] In one embodiment, the waveguide layer 400 may include a second substrate 410. In another embodiment, the second substrate 410 may include a second SIW 420. In another embodiment, the second SIW 420 may include a second waveguide length (l) and a second waveguide width (a). In another embodiment, the second SIW 420 may include a third plurality of vias 422A disposed along the second waveguide length (l) of the second SIW 420. In another embodiment, each via 422 in the third plurality of vias 422A may extend at least partially through the second substrate 410. In another embodiment, the second SIW 420 may include a fourth plurality of vias 422B disposed along the second waveguide length (l) of the second SIW 420. In another embodiment, each via 422 in the fourth plurality of vias 422B may extend at least partially through the second substrate 410. In another embodiment, the third plurality of vias 422A and the fourth plurality of vias 422B may be separated by the second waveguide width (a) of the second SIW 420. In one embodiment, the second substrate 410 may be a component of the waveguide layer 400. In another embodiment, the waveguide layer 400 may consist of only a single layer, and in yet another embodiment, the single layer may be the second substrate 410.

[0151] In an embodiment, the waveguide channel 310 may be at least partially positioned between the third plurality of vias 422A and the fourth plurality of vias 422B. In an embodiment, the channel length (l c The second waveguide width (a) of the second SIW 420 can be greater than that of the second SIW 420. In an embodiment, the second substrate 410 may include the first packaged electromagnetic wave transmission element 421A. In an embodiment, the waveguide channel 310 may be positioned around the first packaged electromagnetic wave transmission element 421A. In an embodiment, the waveguide channel 310 may be positioned parallel to or substantially parallel to the second waveguide length (l) of the second SIW 420.

[0152] In one embodiment, waveguide channel 310 can guide electromagnetic waves between the first SIW 260 and the second SIW 420. In one embodiment, the channel length (l c The waveguide channel 310 can be larger than the first waveguide width (a) of the first SIW 260 and the second waveguide width (a) of the second SIW 420. In an embodiment, the waveguide channel 310 can be located at least partially between the first plurality of vias 262A and the second plurality of vias 262B, and at least partially between the third plurality of vias 422A and the fourth plurality of vias 422B. In an embodiment, the waveguide channel 310 can be located around both the source electromagnetic wave transmission element 261 and the first packaged electromagnetic wave transmission element 421A. In an embodiment, the waveguide channel 310 can be located parallel to or substantially parallel to both the first waveguide length (l) of the first SIW 260 and the second waveguide length (l) of the second SIW 420.

[0153] Figure 7 Describes the fabrication of integrated digital RF circuit systems (such as...) Figure 1-5 The flowchart illustrates a second illustrative method 700 for the fabrication of the integrated digital RF circuit system 100 described herein. While the second method 700 generally relates to the fabrication of the integrated digital RF circuit system described herein, it should be understood that similar processes can be used for other integrated digital RF circuit systems, and only a portion of the second method 700 can be used for other integrated digital RF circuit systems, source boards, antenna packages, and waveguide channels (e.g., as described herein regarding...). Figure 1-5 The described source circuit board 110, antenna package 120 and / or waveguide channel 310, although no steps are related to the components of this integrated digital RF circuit system.

[0154] refer to Figure 7 And refer to Figures 4A-4BThe second method 700 includes forming a second substrate 410 comprising a second SIW 420, as depicted in block 710. In an embodiment, the second SIW 420 may include a second waveguide length (l) and a second waveguide width (a). In an embodiment, the second SIW 420 may include a third plurality of vias 422A disposed along the second waveguide length (l) of the second SIW 420. In an embodiment, each via 422 in the third plurality of vias 422A may extend at least partially through the second substrate 410. In an embodiment, the second SIW 420 may include a fourth plurality of vias 422B disposed along the second waveguide length (l) of the second SIW 420. In an embodiment, each via 422 in the fourth plurality of vias 422B may extend at least partially through the second substrate 410. In an embodiment, the third plurality of vias 422A and the fourth plurality of vias 422B may be separated by the second waveguide width (a) of the second SIW 420. In one embodiment, the second substrate 410 may be a component of the waveguide layer 400. In another embodiment, the waveguide layer 400 may consist of only a single layer, and in yet another embodiment, the single layer may be the second substrate 410.

[0155] Refer again Figure 7 And refer to Figure 1 and 5 The second method 700 includes attaching the antenna layer 500 to the spacer layer 450, as depicted in box 720.

[0156] Refer again Figure 7 And refer to Figure 1 The second method 700 includes attaching the spacer layer 450 to the second substrate 410, as depicted in block 730. In embodiments where the second substrate 410 is a component of the waveguide layer 400, the second method 700 may further or alternatively include attaching the spacer layer 450 to the waveguide layer 400, rather than, for example, attaching the spacer layer 450 directly to the second substrate 410.

[0157] Refer again Figure 7 And refer to Figure 1-4B The second method 700 includes attaching a second substrate 410 to a rear side 114 of a source circuit board 110, as depicted in block 740. In an embodiment, the source circuit board 110 may include a front side 112 opposite to the rear side 114. In an embodiment, the source circuit board 110 may define a waveguide channel 310. In an embodiment, the waveguide channel 310 may guide electromagnetic waves to and / or from the second SIW 420. In an embodiment, the waveguide channel 310 may extend from the rear side 114 toward the front side 112. In an embodiment, the waveguide channel 310 may define a channel length (l c) and channel width (w c In the embodiment, the channel length (l) c It can be greater than the channel width (w) c ).

[0158] In embodiments where the second substrate 410 is a component of the waveguide layer 400, the second method 700 may further or alternatively include attaching the waveguide layer 400 to the source circuit board 110, rather than, for example, attaching the second substrate 410 directly to the source circuit board 110. In embodiments, the waveguide layer 400, rather than the source circuit board 110, may define a waveguide channel 310. In some such embodiments, the waveguide channel 310 may extend from the source circuit board 110 to the second substrate 410.

[0159] In an embodiment, the waveguide channel 310 may be at least partially positioned between the third plurality of vias 422A and the fourth plurality of vias 422B. In an embodiment, the channel length (l c The second waveguide width (a) of the second SIW 420 can be greater than that of the second SIW 420. In an embodiment, the second substrate 410 may include the first packaged electromagnetic wave transmission element 421A. In an embodiment, the waveguide channel 310 may be positioned around the first packaged electromagnetic wave transmission element 421A. In an embodiment, the waveguide channel 310 may be positioned parallel to or substantially parallel to the second waveguide length (l) of the second SIW 420.

[0160] In one embodiment, the source circuit board 110 may include a first substrate 250. In another embodiment, the first substrate 250 may include a first single-wavelength waveguide (SIW) 260. In another embodiment, the first SIW 260 may include a first waveguide length (l) and a first waveguide width (a). In another embodiment, the first SIW 260 may include a first plurality of vias 262A disposed along the first waveguide length (l) of the first SIW 260. In another embodiment, each via 262 in the first plurality of vias 262A may extend at least partially through the first substrate 250. In another embodiment, the first SIW 260 may include a second plurality of vias 262B disposed along the first waveguide length (l) of the first SIW 260. In another embodiment, each via 262 in the second plurality of vias 262B may extend at least partially through the first substrate 250. In another embodiment, the first plurality of vias 262A and the second plurality of vias 262B may be separated by the first waveguide width (a) of the first SIW 260. In an embodiment, waveguide channel 310 can guide electromagnetic waves to and / or from the first SIW 260. In an embodiment, waveguide channel 310 can extend from the rear side 114 toward the front side 112. In an embodiment, the channel length (l) of waveguide channel 310 is... cThe first waveguide width (a) of the first SIW 260 can be greater than that of the first SIW 260. In an embodiment, the waveguide channel 310 can be at least partially located between the first plurality of vias 262A and the second plurality of vias 262B. In an embodiment, the first substrate 250 can include a source electromagnetic wave transmission element 261. In an embodiment, the waveguide channel 310 can be located around the source electromagnetic wave transmission element 261. In an embodiment, the waveguide channel 310 can be positioned parallel to or substantially parallel to the first waveguide length (l) of the first SIW 260.

[0161] In one embodiment, waveguide channel 310 can guide electromagnetic waves between the first SIW 260 and the second SIW 420. In one embodiment, the channel length (l c The waveguide channel 310 can be larger than the first waveguide width (a) of the first SIW 260 and the second waveguide width (a) of the second SIW 420. In an embodiment, the waveguide channel 310 can be located at least partially between the first plurality of vias 262A and the second plurality of vias 262B, and at least partially between the third plurality of vias 422A and the fourth plurality of vias 422B. In an embodiment, the waveguide channel 310 can be located around both the source electromagnetic wave transmission element 261 and the first packaged electromagnetic wave transmission element 421A. In an embodiment, the waveguide channel 310 can be located parallel to or substantially parallel to both the first waveguide length (l) of the first SIW 260 and the second waveguide length (l) of the second SIW 420.

[0162] In one embodiment, the second substrate 410 may be positioned between the spacer layer 450 and the source circuit board 110. In another embodiment, the spacer layer 450 may be positioned between the antenna layer 500 and the second substrate 410.

[0163] It should now be understood that this disclosure relates to various integrated digital RF circuit systems, source circuit boards, and antenna packages, and methods of manufacturing thereof, including SIWs having waveguide lengths, first plurality of vias and second plurality of vias, and waveguide channels having channel lengths and channel widths, wherein the waveguide channels are at least partially located between the first plurality of vias and the second plurality of vias, the channel length being greater than the channel width, and the channel length being greater than the waveguide width. Therefore, this document describes integrated digital RF circuit systems, source circuit boards, and antenna packages having waveguide channels that may be parallel or substantially parallel to the waveguides of the source circuit board (e.g., the integrated digital RF circuit system), the waveguides of the antenna package (e.g., the integrated digital RF circuit system), and / or the waveguide lengths of both the source circuit board and the antenna package of the integrated digital RF circuit system. Such waveguide channels of the source circuit board, antenna package, or both can advantageously reduce the size of such waveguides and / or the substrate on which the waveguides are positioned, for example, by orienting the waveguide channels parallel or substantially parallel to the waveguide lengths of such waveguides. Furthermore, such a waveguide channel for the source circuit board, antenna package, or both can advantageously reduce the electrical losses of electromagnetic waves propagating through the waveguide of the source circuit board or antenna package and / or received by providing a waveguide between the source circuit board and the antenna package.

[0164] Example

[0165] To make the various embodiments easier to understand, refer to the following examples, which are intended to illustrate various embodiments of the laser bonding method described herein.

[0166] Now for reference Figure 8 Figure 800 shows the relationship between the electrical loss (measured in decibels (“dB”) of an electromagnetic wave propagating through a waveguide channel (e.g., waveguide channel 310) and the frequency (in GHz) of such electromagnetic waves. As illustrated at, for example, 77 GHz, the electromagnetic wave exhibits a loss of about 1 dB, including about 0.5 dB of propagation loss (instead of, for example, insertion loss).

[0167] While specific embodiments have been described and illustrated herein, it should be understood that various other changes and modifications may be made without departing from the spirit and scope of the claimed subject matter. Furthermore, although various aspects of the claimed subject matter have been described herein, these aspects need not be used in combination. Therefore, the appended claims are intended to cover all such changes and modifications within the scope of the claimed subject matter.

Claims

1. An integrated digital RF circuit system, comprising: A first substrate, the first substrate including a first substrate integrated waveguide, the first substrate integrated waveguide comprising: First waveguide length and first waveguide width, A first plurality of vias disposed along the length of the first waveguide, wherein each of the first plurality of vias extends at least partially through the first substrate. A second plurality of vias disposed along the length of the first waveguide, wherein each of the second plurality of vias extends at least partially through the first substrate, and wherein the first plurality of vias and the second plurality of vias are separated by the width of the first waveguide; and Source circuit board, the source circuit board comprising: Front side, The rear side, which is opposite to the front side, and A waveguide channel defined by the source circuit board, the waveguide channel guiding electromagnetic waves to or from the first substrate integrated waveguide, wherein the waveguide channel extends from the rear side toward the front side; in: The waveguide channel is at least partially located between the first plurality of vias and the second plurality of vias; The waveguide channel defines the channel length and channel width; The channel length is greater than the channel width; and The channel length is greater than the width of the first waveguide.

2. The integrated digital RF circuit system according to claim 1, wherein: The source circuit board includes the first substrate. The first substrate includes a source electromagnetic wave transmission element, and The source electromagnetic wave transmission element propagates or receives the electromagnetic waves through the waveguide channel.

3. The integrated digital RF circuit system of claim 2, wherein the source electromagnetic wave transmission element comprises at least one of the following: Grounded coplanar waveguide; Microstrip transmission line; Surface mount components; Slot antenna; RF chip; or Any combination thereof.

4. The integrated digital RF circuit system of claim 3, wherein the first substrate is attached to the source circuit board by at least one of the following: Adhesives; welding; Ambient temperature laser welding; Laser sintering; Optical contact; Thermal diffusion bonding; or Any combination thereof.

5. The integrated digital RF circuit system of claim 1, further comprising an antenna package, wherein the antenna package is attached to the rear side of the source circuit board, and wherein the antenna package includes the first substrate.

6. The integrated digital RF circuit system according to claim 5, wherein: The antenna package further includes a spacer layer and an antenna layer; The antenna layer includes antenna elements; The spacer layer is positioned between the antenna layer and the first substrate; and The first substrate is positioned between the spacer layer and the rear side of the source circuit board.

7. The integrated digital RF circuit system of claim 6, wherein the antenna element performs any of the following operations: The first electromagnetic wave is received from the integrated waveguide on the first substrate, and the first electromagnetic wave is transmitted to the environment. Receive the first electromagnetic wave from the environment and transmit the first electromagnetic wave to the first substrate integrated waveguide; or Any combination thereof.

8. The integrated digital RF circuit system according to claim 5, wherein: The source circuit board further includes a second substrate. The second substrate includes a second substrate integrated waveguide; The antenna package includes an encapsulated electromagnetic wave transmission element. The second substrate integrated waveguide includes a source electromagnetic wave transmission element; and The waveguide channel guides the electromagnetic wave between the source electromagnetic wave transmission element and the packaged electromagnetic wave transmission element.

9. The integrated digital RF circuit system of claim 8, wherein either or both of the packaged electromagnetic wave transmission element and the source electromagnetic wave transmission element comprise at least one of the following: Grounded coplanar waveguide; Microstrip transmission line; Surface mount components; Slot antenna; RF chip; or Any combination thereof.

10. The integrated digital RF circuit system of claim 8, wherein the second substrate integrated waveguide comprises: Second waveguide length and second waveguide width; A third plurality of vias disposed along the length of the second waveguide, wherein each of the third plurality of vias extends at least partially through the second substrate; and A fourth plurality of vias are disposed along the length of the second waveguide, wherein each of the fourth plurality of vias extends at least partially through the second substrate, and wherein the third plurality of vias and the fourth plurality of vias are separated by the width of the second waveguide; in: The waveguide channel is at least partially located between the third plurality of vias and the fourth plurality of vias; and The channel length is greater than the width of the second waveguide.

11. The integrated digital RF circuit system of claim 5, wherein the antenna package is attached to the source circuit board by at least one of the following: Adhesives; welding; Ambient temperature laser welding; Laser sintering; Optical contact; Thermal diffusion bonding; or Any combination thereof.

12. The integrated digital RF circuit system of claim 1, wherein the electromagnetic wave contains a frequency greater than or equal to 300 MHz and less than or equal to 300 GHz.

13. The integrated digital RF circuit system of claim 12, wherein the electromagnetic wave comprises a frequency greater than or equal to 75 GHz and less than or equal to 84 GHz.

14. The integrated digital RF circuit system according to claim 1, wherein: The electromagnetic wave includes a wavelength λ. The width of the first waveguide is greater than or equal to (0.5 * λ) – 0.05 mm; and The width of the first waveguide is less than or equal to (0.5 * λ) + 0.05 mm.

15. The integrated digital RF circuit system according to claim 1, wherein: The channel length is greater than or equal to 2.9 mm and less than or equal to 3.1 mm; and The channel width is greater than or equal to 1.4 mm and less than or equal to 1.6 mm.

16. The integrated digital RF circuit system of claim 1, wherein the channel length is parallel to the length of the first waveguide.

17. The integrated circuit system of claim 1, wherein the source circuit board comprises a printed circuit board.

18. The integrated digital RF circuit system of claim 1, wherein the first substrate comprises at least one of the following: Glass; ceramics; Glass and ceramics; polymer; Polycrystalline ceramics; Single-crystal ceramics; or Any combination thereof.

19. A method for manufacturing an integrated digital RF circuit system, the method comprising: Forming a source circuit board, the source circuit board comprising: A substrate, the substrate including a substrate integrated waveguide, the substrate integrated waveguide comprising: Waveguide length and waveguide width A first plurality of vias disposed along the length of the waveguide, wherein each of the first plurality of vias extends at least partially through the substrate. A second plurality of vias are disposed along the length of the waveguide, wherein each of the second plurality of vias extends at least partially through the substrate, and wherein the first plurality of vias and the second plurality of vias are separated by the width of the first waveguide. Front side, The rear side, which is opposite to the front side, and A waveguide channel, defined by the source circuit board, is used to guide electromagnetic waves to or from a first substrate integrated waveguide, wherein the waveguide channel extends from the rear side toward the front side, wherein: The waveguide channel defines the channel length and channel width. The channel length is greater than the channel width. The channel length is greater than the waveguide width, and The waveguide channel is at least partially located between the first plurality of vias and the second plurality of vias; Attach the antenna layer to the spacer layer; Attach the spacer layer to the waveguide layer; The waveguide layer is attached to the rear side of the source circuit board, wherein: The spacer layer is positioned between the waveguide layer and the antenna layer, and The waveguide layer is positioned between the spacer layer and the source circuit board.

20. A method for manufacturing an integrated digital RF circuit system, the method comprising: A substrate is formed, the substrate comprising a substrate integrated waveguide, the substrate integrated waveguide comprising: Waveguide length and waveguide width A first plurality of vias disposed along the length of the waveguide, wherein each of the first plurality of vias extends at least partially through the substrate. A second plurality of vias disposed along the length of the waveguide, wherein each of the second plurality of vias extends at least partially through the substrate, and wherein the first plurality of vias and the second plurality of vias are separated by the width of the waveguide; Attach the antenna layer to the spacer layer; Attaching the spacer layer to the substrate; and The substrate is attached to the rear side of the source circuit board, the source circuit board comprising: The front side, which is opposite to the rear side, and A waveguide channel, defined by the source circuit board, is used to guide electromagnetic waves to or from the substrate-integrated waveguide, wherein: The waveguide channel extends from the rear side toward the front side. The waveguide channel is at least partially located between the first plurality of vias and the second plurality of vias. The waveguide channel defines the channel length and channel width. The channel length is greater than the channel width. The channel length is greater than the waveguide width. The substrate is positioned between the spacer layer and the source circuit board, and The spacer layer is positioned between the antenna layer and the substrate.

Images