Semiconductor laser with ridge-integrated pn junction temperature control layer and preparation method thereof

By introducing a ridge-side integrated PN junction temperature control layer into a semiconductor laser, and utilizing the high resistance and small footprint of the PN junction, efficient thermal tuning of the laser is achieved. This solves the problems of process complexity and large space occupation in traditional solutions, and meets the industrial requirements of high integration and high reliability.

CN122338532APending Publication Date: 2026-07-03SHENZHEN XINGHAN LASER TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHENZHEN XINGHAN LASER TECH CO LTD
Filing Date
2026-06-05
Publication Date
2026-07-03

AI Technical Summary

Technical Problem

Traditional thermal tuning solutions in semiconductor lasers suffer from high process complexity, poor structural reliability, or large space occupation, making it difficult to meet the industrial demands for high integration, low cost, and high reliability.

Method used

The design employs a ridge-side integrated PN junction temperature control layer. By introducing a PN junction formed by a P-type control layer and an N-type control layer into the semiconductor laser, the high static resistance and small footprint of the PN junction are utilized to achieve efficient thermal tuning. Furthermore, the temperature and electric field of the temperature control region are controlled by voltage to adjust the laser wavelength and limit the lateral diffusion of charge carriers.

Benefits of technology

It achieves precise wavelength fine-tuning, narrow linewidth output, and stable transverse mode characteristics of lasers under low power consumption conditions, reduces the process complexity of thermal tuning schemes, improves structural reliability, and reduces space occupation, thus meeting the industrial requirements of high integration, low cost, and high reliability.

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Abstract

This application provides a semiconductor laser with a ridge-side integrated PN junction temperature control layer and its fabrication method, relating to the field of semiconductor laser technology. The semiconductor laser includes a substrate; an epitaxial structure formed on one side of the substrate along a first direction; the epitaxial structure having a first surface facing away from the substrate; a ridge waveguide layer formed on the first surface and extending along a second direction; a temperature control region formed on the first surface and located on one side of the ridge waveguide layer along a third direction; the temperature control region includes a P-type control layer and an N-type control layer, which form a PN junction. In this application embodiment, because the PN junction has high resistance and small footprint under static operation, it is possible to achieve efficient thermal tuning while reducing the process complexity of the thermal tuning scheme, improving structural reliability, and reducing the footprint, thereby meeting the industrial demands for high integration, low cost, and high reliability.
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