Method for manufacturing a screen mask and exposure apparatus

Abstract

This invention provides a method for manufacturing a screen mask and an exposure apparatus capable of achieving high-precision printing. One aspect of the screen mask manufacturing method includes: an exposure process in which light is irradiated onto a photosensitive material mask film with a predetermined exposure pattern to form predetermined pattern openings in the mask film, the mask film being formed in a grid portion having a transmittance portion for a coating material to pass through; and correction of the exposure pattern based on information from the transmittance portion.

Description

[0001] This application is a divisional application of Chinese invention patent application filed on June 14, 2019, with application number 201980015266.4, entitled "Method for manufacturing a screen mask and an exposure apparatus", and filed by Mitani Mecroni Co., Ltd. Technical Field

[0002] The embodiments of the present invention relate to a method for manufacturing a screen mask and an exposure apparatus. Background Technology

[0003] Screen printing, as a printing method, involves using a screen mask with a predetermined pattern of openings formed from a resin composition on a grid to create an arbitrary print on the substrate. This screen printing method is used for various printing applications, such as wiring, electrodes, and fluorescent materials, and is applied in various fields including electronic components.

[0004] In recent years, the miniaturization and high quality of electronic components have led to a demand for high precision in screen masks.

[0005] For example, a screen mask comprises: a grid having holes through which a coating material can pass; and a mask film disposed on the grid and having patterned openings. For example, after an emulsion for forming the mask film is coated onto the grid, the patterned openings are formed by an exposure process of overlapping a photomask having a predetermined pattern.

[0006] A grid is constructed by weaving together multiple grid lines. For example, if the pattern opening overlaps with the grid lines, part of the pattern opening will be blocked by the grid material, causing the printed shape to change and making it difficult to obtain the desired printed shape.

[0007] Existing technical documents

[0008] Patent documents

[0009] Patent Document 1: Japanese Patent Application Publication No. 2013-169783 Summary of the Invention

[0010] The problem that the invention will solve

[0011] The purpose of this invention is to provide a method for manufacturing a screen mask and an exposure apparatus that enables high-precision printing.

[0012] Methods for solving problems

[0013] One aspect of the present invention provides a method for manufacturing a screen mask comprising: an exposure process in which light is irradiated onto a photosensitive material mask film with a predetermined exposure pattern, a predetermined pattern opening is formed in the mask film, the mask film being formed in a grid portion having a transmissive portion through which a coating material passes; and correction of the exposure pattern based on information from the transmissive portion.

[0014] According to embodiments of the present invention, a method for manufacturing a screen mask capable of forming highly precise patterns and an exposure apparatus can be provided. Attached Figure Description

[0015] Figure 1 This is an explanatory diagram showing the configuration of the screen printing apparatus according to the first embodiment.

[0016] Figure 2 This is a top view of the screen mask of the screen printing device.

[0017] Figure 3 This is a magnified top view showing a portion of the screen mask.

[0018] Figure 4 This is a magnified top view showing a portion of the screen mask.

[0019] Figure 5 This is a magnified cross-sectional view showing a portion of the screen mask.

[0020] Figure 6 This is an illustration of a solar cell with a pattern formed using a screen mask.

[0021] Figure 7 This is an explanatory diagram illustrating the manufacturing method of the screen mask according to this embodiment.

[0022] Figure 8 This is an explanatory diagram showing the manufacturing method of the screen mask.

[0023] Figure 9 This is an explanatory diagram illustrating the correction process in the manufacturing method of the screen mask.

[0024] Figure 10 This is an explanatory diagram showing the configuration of a screen mask in other embodiments.

[0025] Figure 11 This is an explanatory diagram showing the configuration of a screen mask in other embodiments.

[0026] Figure 12 This is an explanatory diagram showing the configuration of a screen mask in other embodiments.

[0027] Figure 13 This is an explanatory diagram showing the configuration of a screen mask in other embodiments.

[0028] Figure 14 This is an explanatory diagram showing the configuration of a screen mask in other embodiments.

[0029] Figure 15 This is an explanatory diagram illustrating the correction process in a method for manufacturing a screen mask according to other embodiments. Detailed Implementation

[0030] The following is for reference Figures 1 to 3 The screen printing apparatus 10 and screen mask 20 according to the first embodiment of the present invention will be described. Figure 1 This is an explanatory diagram showing the configuration of the screen printing apparatus 10 according to this embodiment. Figure 2 This is a top view of the screen mask 20 of the screen printing apparatus 10. Figures 3 to 5 This is an enlarged top view and cross-sectional view showing a portion of the screen mask 20. Figure 6 This is a perspective view showing the structure of a solar cell patterned using a screen mask 20. Furthermore, for illustrative purposes, the structure has been appropriately enlarged, reduced, or omitted in each figure. The arrows X, Y, and Z in the figures represent three mutually orthogonal directions; the first direction is the Y direction, and the second direction is the X direction.

[0031] like Figure 1 as well as Figure 2 As shown, the screen printing apparatus 10 includes: a screen mask 20; a holding member 12 that holds a printing medium 30 opposite to a side (surface) of the screen mask 20 that is the printing surface side; a squeegee 13 configured to move in a state that abuts against a side (back side) of the screen mask 20 opposite to the printing surface side; a moving unit for moving the squeegee 13; and a support unit for supporting the screen mask 20 and the printing medium 30 opposite to each other.

[0032] The screen printing apparatus 10 forms various printing materials in a prescribed pattern on the surface of the printing medium 30. The screen printing apparatus 10 is used, for example, in the manufacture of chip components (capacitors, chip resistors, inductors, thermistors, etc.), touch panels, liquid crystal display (LCD) substrate seals, LTCC (Low Temperature Co-fired ceramics) substrates, electrodes for solar cells, and other electronic components.

[0033] The screen mask 20 includes a frame 21, a grid portion 22 stretched on the frame 21, and a mask film 23 of photosensitive material formed on the grid portion 22. In the screen mask 20, the side facing the surface of the printing medium 30 during printing is designated as the surface, and the opposite side, which is the side to which the coating material is supplied, is designated as the back side.

[0034] The frame 21 is configured as a frame with two pairs of parallel sides, for example, a square opening of a desired size. The frame 21 supports the outer periphery of the grid section 22, and the grid section 22 is stretched in the opening.

[0035] In addition, the frame 21 also functions as a frame that holds a specified amount of coating material on the back side of the mask film 23. The frame 21 and the mesh portion 22 are joined at the joint using, for example, a synthetic rubber or cyanoacrylate adhesive.

[0036] The mesh section 22 is a so-called composite type, consisting of an inner main mesh 26 with different elongation rates and an outer support mesh 27, which are fixed together using a UV-curable adhesive. The mesh section 22 holds the mask film 23 at the opening of the frame 21.

[0037] like Figures 1 to 5 As shown, the main mesh 26 is square or rectangular. The main mesh 26 is a fabric woven from warp threads 26a and weft threads 26b, which serve as mesh wires, and has multiple perforations 26c that allow the coating material to pass through. The warp threads 26a and weft threads 26b of the main mesh 26 are made of metals such as stainless steel or tungsten. The diameter d1 of the warp thread 26a and the diameter d2 of the weft thread are 10 to 150 μm. The phase difference between the warp threads 26a and the weft threads 26b is 90°; for example, the warp thread 26a is along the X direction, and the weft thread 26b is along the Y direction. As an example, in this embodiment, d1 = d2 = φ16 μm, the longitudinal and transverse dimensions of the perforations 26c are 54.6 μm, and the number of meshes is 360.

[0038] The support mesh 27 is bonded to the outer periphery of the main mesh 26 using an adhesive. The support mesh 27 is a fabric woven from warp yarns 27a and weft yarns 27b. The support mesh 27 is configured to have a higher elongation rate than the main mesh 26. The warp yarns 27a and weft yarns 27b of the support mesh 27 are made of, for example, synthetic resins such as polyester.

[0039] For example, in this embodiment, the elongation of the main grid 26 is smaller than that of the support grid 27.

[0040] The support grid 27 has a shape corresponding to the shape of the opening portion of the frame 21, and is configured as a square with the same dimensions in the X and Y directions. The outer periphery of the support grid 27 is joined to and supported by the frame 21 using adhesives or the like.

[0041] The mask film 23 is a layer composed of a photocurable resin composition such as PVA, PVAc, silicone resin, acrylic resin, epoxy resin, etc. The mask film 23 is formed in the grid portion 22 and disposed in the opening portion of the frame 21. The mask film 23 forms a predetermined pattern opening 23a for printing through maskless exposure.

[0042] The pattern opening 23a is formed within the effective area of ​​the mask film 23 formed on the main grid 26. In this embodiment, the pattern opening 23a is, for example, a shape corresponding to the pattern shape of the electrode of the solar cell, and is configured as a square shape having multiple parallel linear finger-shaped portions 23b and linear busbar portions 23c extending intersecting with the finger-shaped portions 23b.

[0043] Multiple finger-shaped portions 23b are arranged longitudinally, and multiple confluence strip portions are arranged transversely. That is, the finger-shaped portions 23b and the confluence strip portions 23c extend along the meridians and parallels of the main grid 26, respectively.

[0044] As an example, in this embodiment, the pattern opening 23a is configured as a rectangular shape with a square diameter of 100mm to 400mm. The width dimension wf1 of the lines of the finger-shaped portions 23b is 0.015mm to 0.050mm, and the spacing Pf1 of the finger-shaped portions 23b is 0.5mm to 2.0mm. Three to six confluence strips 23c are arranged within the depicted area, with a width dimension Wb1 of 0.1mm to 2.0mm and a spacing Pb1 of 15mm to 60mm. The inclination angle between the finger-shaped portions 23b and the warp threads 26a of the mesh material is set to 0±0.1°, and the inclination angle between the finger-shaped portions 23b and the weft threads 26b of the mesh material is set to 90±5°. The inclination angle between the confluence strips 23c and the warp threads 26a of the mesh material is set to 90±5°, and the inclination angle between the confluence strips 23c and the weft threads 26b of the mesh material is set to 0±5°.

[0045] The finger-shaped portions 23b are arranged in a parallel configuration along the direction of the warp 26a, and are arranged along the perforations 26c between adjacent pairs of warp 26a in a position that does not overlap with the warp 26a, thus ensuring that the openings of the mask film 23 are not blocked by the mesh wires. On the other hand, the busbar portions 23c are arranged along the perforations 26c between adjacent pairs of weft 26b, thus ensuring that the openings are not blocked by the mesh wires. Furthermore, the finger-shaped portions 23b are orthogonal to the weft 26b at 90 degrees, and the busbar portions 23c are orthogonal to the warp 26a at 90 degrees.

[0046] The mask 23 has a printing section in the pattern opening 23a where there is no photosensitive resin and the coating material can pass through the holes of the grid section 22 from the back side to the surface. The parts of the mask 23 other than the pattern opening 23a where the holes of the grid section 22 are blocked by photosensitive resin constitute non-printing sections where ink as the coating material cannot pass through.

[0047] The mesh portion 22 on which the mask film 23 is formed is configured to be elastically deformable in such a way as to bend and deform by the pressing pressure of the squeegee 13 and recover by releasing the pressing pressure. With the coating material in the pattern opening 23a of the mask film 23, the mask film 23 contacts and separates from the printing medium 30 by means of the elastic deformation of the mesh portion 22, so that the coating material is transferred from the pattern opening 23a to the printing medium 30.

[0048] The squeegee 13 is made of materials such as polyurethane rubber, silicone rubber, synthetic rubber, metal, or plastic, and is in the form of a thin plate. For example, the squeegee 13 is chamfered in such a way that the thickness at the front end is reduced. The squeegee 13 is configured to reciprocate relative to the frame 21. For example, the squeegee 13 is configured to have a length covering the entire area of ​​the mask film 23 in a direction orthogonal to the moving direction. The front end portion 13a of the squeegee 13 abuts against the back of the screen mask 20, and while being pressed towards the surface, it moves in the moving direction along the Y direction, thereby pressing the entire surface of the mask film 23 and pushing the coating material outward from the pattern opening 23a pre-filled with the coating material.

[0049] The support unit supports the frame 21 parallel to the printing medium 30 at a predetermined interval. The moving unit moves the scraper 13 along a first direction at a predetermined speed.

[0050] Next, refer to Figures 1 to 6 This describes a method for manufacturing printed matter 31 using the screen printing apparatus 10 of this embodiment. First, the surface side of the screen mask 20 is arranged opposite to the surface of the printing medium 30 held by the holding member 12.

[0051] Then, a high-viscosity paste-like coating material is supplied from the back side of the screen mask 20, that is, the side opposite to the printing medium 30, so that the coating material fills the pattern opening 23a.

[0052] Next, the squeegee 13 is positioned on the back side of the screen mask 20, that is, on the side opposite to the printing surface. At this time, for example, the squeegee 13 is positioned at a predetermined angle θ relative to the surface of the printing medium 30. Then, the squeegee 13 is pressed against the back side of the mesh portion 22 and the mask film 23 with a predetermined printing pressure toward the printing medium 30 while moving along the Y direction at a predetermined speed.

[0053] The squeegee 13 presses the mask 23 over the entire back surface area, for example. The pressing action of the squeegee 13 deforms the mask 23 by displacing the pressed portion towards the surface, bringing it into contact with the printing medium 30. The coating material propelled by the squeegee 13 is pushed from the pattern opening 23a towards the printing medium 30.

[0054] After the squeegee 13 passes, the mask film 23 and the mesh portion 22 deform in a restorative manner and leave the printing medium 30. A portion of the coating material is transferred onto the printing medium 30 and remains there, thus completing pattern printing on the printing medium 30 and completing the printed object 31. Furthermore, the coating material can be various materials, including metals and resins, and multiple materials can be used depending on the type of printed object, such as electronic components or displays. For example... Figure 6 The solar cell 100 shown is patterned, for example, using a screen mask 20, to form electrodes 123 having pattern shapes corresponding to the pattern openings 23a of the screen mask 20. The electrodes 123 have linear finger electrodes 123b and busbar electrodes 123c that correspond to the linear openings, i.e., a plurality of finger portions 23b and a plurality of busbar portions 23c in the pattern openings 23a, respectively.

[0055] During printing, the longer squeegee 13 in the X direction is pressed down in the Z direction while moving a predetermined amount in the Y direction. Due to this movement and pressing, the grid section 22 deforms and extends.

[0056] Next, refer to Figures 1 to 9 The manufacturing method of the screen mask 20 of this embodiment will be described. Figure 7 as well as Figure 8 This is an explanatory diagram showing the manufacturing method of the screen mask 20. Figure 7 The configuration of the grid detection device 60 is shown. Figure 8 The exposure apparatus is shown. Figure 9 This is an explanatory diagram illustrating the correction process. The manufacturing method of the screen mask 20 includes mesh data detection processing, emulsion Pm coating processing, and exposure processing.

[0057] In the manufacturing method of the screen mask 20, firstly, a mesh substrate with a mesh portion 22 attached is placed inside the frame 21, and mesh pattern detection processing is performed by scanning to detect mesh pattern data containing information on the position and shape of the mesh wires and the transparent portion.

[0058] Figure 7 The grid detection device 60 shown includes a support device 61, a scanning head 62, and an LED illumination 63. The grid detection device 60 detects information such as the shape and size of the grid section 22, the position and shape of the warp lines 26a and weft lines 26b of the main grid 26, and the holes 26c, i.e., grid pattern data, as CAD data. The grid detection device 60 stores the grid data and sends it to the exposure device 50.

[0059] Next, a coating process is performed to coat the emulsion Pm onto the mesh portion 22, forming the emulsion Pm into a flat plate on the mesh portion 22.

[0060] The emulsion Pm used as a mask material is a photocurable resin, such as a liquid containing polyvinyl alcohol (PVA), polyvinyl acetate (PVAc), silicone resin, acrylic resin, epoxy resin, etc.

[0061] For example, the coating process can be repeated multiple times as needed. In this embodiment, the emulsion thickness Pm is set so that the emulsion thickness tm after drying is approximately 10 μm. Alternatively, the mesh can be coated in a horizontal orientation or a vertical orientation.

[0062] Next, maskless exposure processing is performed using a so-called maskless exposure device 50 (maskless exposure machine) that does not use a photomask, with a specified exposure pattern.

[0063] Figure 8 This is an explanatory diagram showing the configuration of the exposure apparatus 50. (For example...) Figure 8 As shown, the exposure apparatus 50 includes a support device 51, an irradiation head 52 including a DMD element, and a control device 57 for controlling the operation of each part.

[0064] Exposure apparatus 50 is an exposure apparatus that draws a predetermined exposure pattern directly onto screen mask 20 using irradiation head 52 without a photomask.

[0065] The support device 51 includes a worktable 51a capable of moving the mesh component having a frame 21 and a mesh section 22. The support device 51 is driven, for example, by a control device 57, and includes a moving mechanism that moves the worktable 51a, for example, in two directions, such as the X-axis and the Y-axis. The worktable 51a includes, for example, an adsorption mechanism. The moving mechanism moves the irradiation head 52 relative to the screen mask 20.

[0066] The irradiation head 52 is configured to irradiate multiple wavelengths of laser light. For example, it can be driven by the control device 57 to irradiate two wavelengths (375 nm and 405 nm) of laser light, either individually or in combination.

[0067] The irradiation head 52 includes a laser light source 52a that emits a laser beam, multiple DMD elements 52b that reflect light from the laser light source 52a to irradiate the mask film 23, and a microlens array 52c. Each DMD element 52b, under the control of the control unit 57a, performs ON / OFF control according to a predetermined exposure pattern stored or calculated as CAD data, irradiating the mask film 23 with the laser beam in the ON state. The laser beam is focused by the microlens array 52c. For example, the DMD elements 52b switch ON / OFF states tens of thousands of times per second.

[0068] The control device 57 includes a control unit 57a that executes a prescribed program and a storage unit 57b that stores various programs and settings. For example, the storage unit 57b stores drawing data such as exposure patterns and output conditions for exposure processing.

[0069] The control unit 57a drives the irradiation head 52 and the support device 51 based on a pre-set program and various data, thereby exposing the mask film 23 with a predetermined exposure pattern to form a pattern opening 23a.

[0070] Furthermore, the control unit 57a corrects the exposure pattern based on grid pattern data containing the position information of the hole portion 26c. That is, the control unit 57a performs correction processing (adjustment processing) on ​​the CAD data, i.e., the basic pattern data, which corresponds to the shape of the opening of the drawn pattern, based on the grid information, and determines the CAD data of the pattern for the actual exposure processing, i.e., the exposure pattern.

[0071] During the correction process, the control unit 57a adjusts the positional relationship between the pattern opening 23a and the hole 26c of the grid portion 22 within the depicted area of ​​the object. For example, the control unit 57a adjusts one or more of the opening width and spacing of the linear opening 23d of the pattern opening 23a, and the tilt angle between the grid line 26d and the linear opening 23d.

[0072] Specifically, for example, the position is adjusted so that the opening of the pattern opening 23a overlaps with the position of the hole (transparent portion) 26c of the grid. For example, the position, size, tilt angle of the exposure pattern relative to the mask film 23, the opening width of each linear opening 23d in the exposure pattern, and the spacing are increased or decreased.

[0073] As an example, in Figure 9 In the correction process shown, the original data illustrates a pattern opening 23a where the shape is a linear opening 23d with a width of 0.03 mm, i.e., multiple finger-shaped portions 23b arranged at 0.18 mm intervals. The control unit, as a detection process, scans and detects the data of the main grid 26, digitizing the positions of the grid openings (i.e., the positions of the transparent portions), and detecting the arrangement direction and parallel spacing of the transparent portions. As a correction process, the control unit adjusts the spacing and extension angle of the finger-shaped portions 23b to match the spacing and parallel angle of the transparent portions.

[0074] That is, the control unit performs a correction process to tilt the extension direction of the finger-shaped portion 23b in accordance with the extension direction of the column of the through portion. For example, the relative angle between the pattern opening 23a and the grid portion 22 is adjusted so that the tilt angle with the warp 26a, which is the grid wire 26d, is in the range of -5 degrees to 5 degrees, preferably 0 degrees.

[0075] Furthermore, as an example of adjusting the relative position with respect to the reference position, one could make the center line of the reference position of the finger-shaped portion 23b close to the middle position of a pair of meridians 26a. Preferably, the center line of the finger-shaped portion 23b coincides with the middle line of the pair of meridians 26a.

[0076] Furthermore, by setting the spacing Pf1 of the finger-shaped portions 23b to a multiple of the spacing Pm1 of the meridians 26a, all finger-shaped portions 23b are configured to not overlap with the meridians 26a of the main grid 26. For example, in Figure 9 In the example shown, the interval changes from 0.18 mm to 0.22 mm.

[0077] In another example of adjusting the relative position to the reference position, during calibration, the center line of the busbar portion 23c is positioned in the middle of a pair of latitude lines 26b, adjusting the position of the busbar portion in the exposure pattern so that the opening is not blocked by the grid lines. The inclination angle between the wider busbar pattern and the latitude lines can also be relatively large. Therefore, in the case of linear openings with different multiple directions, the angle of the narrower linear opening is adjusted preferentially.

[0078] Here, the correction amount for the positional displacement of the linear opening is set to ±0.05 mm or less. Furthermore, in this embodiment, the correction amount for the positional displacement of the linear opening is preferably less than or equal to the line width. For example, when the width Wf1 of the electrode and the finger portion 23b is approximately 0.030 mm and the arrangement spacing Pf1 is approximately 1.4 mm, the correction amount for the positional displacement of the finger portion 23b is set to 0.03 mm or less. More preferably, the correction amount for the linear opening is set to 1 / 2 or less of the line width. That is, for example, in a grid with 360 lines... In the case of 360 meshes, with the line width of the finger-shaped part 23b and the electrode being 0.071, it is set to ±0.035 or less.

[0079] Exposure processing is an exposure process in which light is irradiated from the printed surface side. By exposing the surface to a predetermined pattern, the area corresponding to the exposure pattern is cured. Specifically, in a designated area, the surface of the emulsion Pm is positioned with the irradiation head (such as an ultraviolet lamp or ultraviolet LED) facing the surface, and light is irradiated using the irradiation head 52 to perform exposure processing on the surface of the emulsion Pm. As an example, the exposure amount is approximately 1000 mJ / cm².

[0080] Based on the calculated exposure pattern data, the control unit 57a irradiates a laser beam onto a designated exposure area. Alternatively, the designated exposure area can be exposed multiple times while simultaneously scanning areas with narrower depiction regions.

[0081] Through exposure processing, the portion of the emulsion Pm that has been irradiated with ultraviolet light corresponding to the exposed pattern is cured by ultraviolet light.

[0082] After exposure, as an etching process, the surface side of the emulsion Pm is rinsed with water and solvent. This process removes the uncured portions of the emulsion Pm. Specifically, all uncured areas within the emulsion Pm layer are rinsed, forming a patterned opening 23a extending from the surface side to the back side in the thickness direction. Through this process, a mask film 23 with a defined patterned opening 23a is formed from the emulsion Pm.

[0083] According to the manufacturing method of the screen mask configured as described above, by adjusting the correction of the position of the pattern opening 23a and the aperture 26c, it is possible to prevent the opening from being blocked by the grid lines 26d. Therefore, a screen mask 20 that can obtain the desired printed shape can be manufactured. Thus, for example, in a screen mask for forming electrodes of a solar cell having multiple finger-shaped portions 23b as finer linear openings 23d, the pattern shape is uninterrupted, the deviation of the opening width is reduced, and thus it is possible to prevent line breakage and increase in resistance value, and to form a stable electrode. In addition, in the electrodes of a solar cell, by setting the correction amount to 0.05 mm or less, or less than the line width, and more preferably less than 1 / 2 of the line width, the performance of the electrodes of the solar cell can be ensured.

[0084] Furthermore, by employing maskless exposure without using a photomask, the above-described embodiment can easily achieve correction processing corresponding to the shape of each grid section 22. That is, for example, in the case of pattern formation using a photomask, it is necessary to form a photomask conforming to the shape of each grid. However, according to the above-described embodiment, since a photomask is not required, correction corresponding to the different grid shapes can be achieved simply by correcting the exposure data of maskless exposure, and a screen mask capable of high-precision pattern formation can be formed.

[0085] Furthermore, the present invention is not limited to the above-described embodiments as is. During the implementation phase, the constituent elements can be modified and embodied without departing from its main idea.

[0086] For example, the shapes of the grid portion 22 and the pattern opening 23a are not limited to the above-described embodiment, but can be appropriately changed. For example Figure 10 This is an explanatory diagram showing the correspondence between various types of grid sections 22 and pattern openings 23a. In the diagram, φ represents the diameter of the warp 26a and weft 26b of the grid section 22, and OP represents the opening width of the grid section 22. Figure 10 As shown, by aligning the angles of the linear opening 23d with the warp 26a or the weft 26b, and by placing the linear opening 23d in the hole 26c between a pair of parallel threads, the same effect as the above embodiment can be obtained.

[0087] Furthermore, in the above embodiment, a patterned opening 23a for forming an electrode for a solar cell is shown, but it is not limited to this.

[0088] As other implementation methods, such as Figure 11 As shown, in the case of a pattern shape having multiple linear openings 23d extending in one direction, the angle can also be adjusted so that it is inclined at an angle to both the warp 26a and the weft 26b. In this case, since each linear opening 23d is not blocked by the grid wires 26d, the same effect as the above-described embodiment can be obtained.

[0089] As other implementation methods, such as Figure 12 as well as Figure 13 As shown, in a pattern opening 23a that includes a pattern shape comprising a linear opening 23d having curved linear portions facing different directions, each linear portion is arranged in the direction along the warp 26a and the weft 26b respectively, and the linear opening 23d is arranged between adjacent grid wires 26d to achieve the same effect as the above embodiment.

[0090] As another implementation method, it can also be as follows: Figure 14 As shown, in the patterned opening 23a with a pattern of multiple square and circular openings 23e and 23f, the alignment is performed such that each opening 23e and 23f is arranged in the hole 26c of the grid portion 22. In this case, since each opening 23e and 23f is not blocked by the grid wire 26d, the same effect as in the above embodiment can be obtained.

[0091] Furthermore, the above embodiment shows an example of adjusting the angle after adjusting the pattern spacing, but it is not limited to this. For example, it can also be done as follows: Figure 15 As shown, after adjusting the overall angle of the pattern to match the extension angle of the grid, the position of the staggered linear opening 23d is corrected.

[0092] Furthermore, the above embodiments illustrate an example of using a laser light source to irradiate a laser beam, but are not limited to this; a configuration that includes an ultraviolet light source capable of irradiating ultraviolet light may also be used.

[0093] In addition, the constituent elements illustrated in the above embodiments can be deleted, and the shape, structure, material, etc., of each constituent element can be changed. Various inventions can be formed by appropriate combinations of the multiple constituent elements disclosed in the above embodiments.

[0094] Explanation of reference numerals in the attached figures

[0095] 10…screen printing apparatus, 12…holding component, 13…squeegee, 13a…front end portion, 20…screen mask, 21…frame, 22…grid section, 23…mask film, 23a…pattern opening, 23b…finger section, 23c…busbar section, 26…main grid, 26a…warp, 26b…weft, 26c…perforation (transmission section), 27…support grid, 27a…warp, 27b…weft, 30…printing medium, 31…printed material, 50…exposure device, 51…support device, 51a…worktable, 52…irradiation head, 52a…laser light source, 52b…DMD element, 52c…microlens array, 57…control device, 57a…control section, 57b…storage section, 60…grid detection device, 61…support device, 62…scanning head, 63…LED illumination.

Claims

1. A method for manufacturing a screen mask, comprising: Maskless exposure processing involves irradiating a photosensitive material mask film with light using an exposure pattern based on specified exposure data, forming a specified pattern opening in the mask film, wherein the mask film is formed in a grid portion having a transmissive portion for the coating material to pass through; Based on the information from the transmitted portion, the exposure data of the maskless exposure process is corrected; and The step of detecting the position information of the transparent portion of the mesh portion; In the correction, the relative position of the reference position of the exposure pattern and the transmission portion of the grid portion is adjusted. The adjustment of the relative position is a correction of the CAD data. This involves correcting the pre-set base pattern data to determine the CAD data of the actual exposure pattern, i.e., the exposure pattern. The mesh section has multiple mesh wires arranged side by side. The pattern opening has multiple linear openings arranged side by side. In the correction, the spacing of the linear openings in the exposure pattern is adjusted. In the correction, the center position of the linear opening is brought close to the center position of the plurality of mesh wires. When the widths of linear openings differ in multiple directions, the adjustment of the angle prioritizes the direction of the narrower linear opening. In the correction, the position of the linear opening is shifted, and the shift correction amount is less than or equal to the line width. In the correction, the interval, or spacing, of any arrangement of the linear openings is set to a multiple of the line spacing of the mesh.

2. The method for manufacturing a screen mask according to claim 1, wherein, In the correction, one or more of the following are adjusted: the opening width of the linear opening in the exposure pattern, and the tilt angle between the grid line forming the grid portion and the linear opening.

3. The method for manufacturing a screen mask according to claim 1, wherein, The patterned opening is a shape corresponding to the patterned shape of the electrode of the solar cell, and has multiple parallel linear finger-shaped portions and linear busbar portions that intersect and extend from the finger-shaped portions.

4. An exposure apparatus for maskless exposure of a screen mask with an exposure pattern based on predetermined exposure data, the screen mask comprising: a mesh portion having a permeable portion for a coating material to pass through; and a mask film formed in the mesh portion, wherein... The exposure apparatus comprises: An irradiation head that irradiates light onto the mask film of the screen mask; A moving mechanism that moves the irradiation head relative to the screen mask; and The control unit corrects the exposure data of the maskless exposure based on the position information of the transparent portion of the screen mask. In the correction, the relative position of the reference position of the exposure pattern and the transmission portion of the grid portion is adjusted. The adjustment of the relative position is a correction of the CAD data. This involves correcting the pre-set base pattern data to determine the CAD data of the actual exposure pattern, i.e., the exposure pattern. The mesh section has multiple mesh wires arranged side by side. The pattern opening has multiple linear openings arranged side by side. In the correction, the spacing of the linear openings in the exposure pattern is adjusted. In the correction, the center position of the linear opening is brought close to the center position of the plurality of mesh wires. When the widths of linear openings differ in multiple directions, the adjustment of the angle prioritizes the direction of the narrower linear opening. In the correction, the position of the linear opening is shifted, and the shift correction amount is less than or equal to the line width. In the correction, the interval, or spacing, of any one of the linear openings is set to a multiple of the line spacing of the mesh. The control unit detects the position information of the through portion of the mesh portion.

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