NiFeP alloy interface barrier layer of n-type bismuth telluride-based thermoelectric element and preparation method thereof

By using NiFeP alloy as an interface barrier layer in n-type bismuth telluride thermoelectric devices, the problem of rapid diffusion of nickel-based barrier layers was solved, achieving low interface reaction rate and high bonding strength at high temperatures, making it suitable for industrial production.

CN122373678APending Publication Date: 2026-07-10SHANGHAI SECOND POLYTECHNIC UNIVERSITY
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI SECOND POLYTECHNIC UNIVERSITY
Filing Date
2026-03-16
Publication Date
2026-07-10

AI Technical Summary

Technical Problem

In existing n-type bismuth telluride thermoelectric devices, the high interfacial reaction rate between the nickel-based barrier layer and bismuth telluride leads to element diffusion, increased contact resistance, and decreased bonding strength, which seriously affects the performance in high-temperature applications.

Method used

A NiFeP alloy is used as an interface barrier layer. A Ni-18Fe-3P ternary alloy coating is formed by electroplating. The Fe and P contents are controlled to form a high-iron and low-phosphorus crystalline structure, which hinders Ni diffusion and improves thermal expansion matching.

Benefits of technology

It significantly reduces the interfacial reaction rate, enhances the interfacial bonding strength, and maintains low contact resistivity, making it suitable for large-scale industrial production.

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Abstract

The application discloses an n-type bismuth telluride-based thermoelectric element NiFeP alloy interface barrier layer and a preparation method thereof, and belongs to the technical field of thermoelectric materials and devices. The barrier layer in the application is an electroplated NiFeP ternary plating layer, the content of Fe is 15-20 wt%, the content of P is 2-4 wt%, the balance is Ni, the thickness is 5-10 microns, and the barrier layer is prepared through substrate pretreatment, electroplating solution preparation, electroplating deposition and post-treatment. The application also constructs a thermoelectric element containing the barrier layer, and the n-type bismuth telluride thermoelectric material layer is connected by a NiFeP alloy interface barrier layer, a SAC305 solder layer and a copper electrode layer in sequence. The barrier layer has excellent diffusion inhibition effect, the interface bonding strength is greater than 16 MPa and the contact resistivity is less than 8 mu omega cm after aging at 200 DEG C for 144 hours. 2 The preparation process is simple, the cost is relatively low, large-scale production is suitable, and the barrier layer is expected to play an important role in the application field of thermoelectric materials and devices.
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