A multifunctional optoelectronic logic gate device based on circularly polarized light and a preparation method and application thereof

Abstract

The application discloses a multifunctional optoelectronic logic gate device based on circularly polarized light and a preparation method and application thereof, comprising a bottom substrate, a bottom electrode, a chiral light-absorbing active layer, a top transparent electrode and a top transparent packaging layer which are sequentially stacked. The chiral light-absorbing active layer comprises lead-free chiral molecules, skeleton materials, carrier transport materials and stabilizers. The application utilizes the intrinsic differential response of chiral materials to left-handed and right-handed circularly polarized light to directly realize circularly polarized light detection on a single device. By synergistically regulating the polarization state, light intensity and / or external bias of incident light, the device can serve as a reconfigurable logic gate to output various binary or multi-value logic operation results. The application has the advantages of environmental friendliness and high stability, and realizes the integration of detection, logic and potential imaging functions. The device structure is simple, the preparation process is convenient, and the application has a wide application prospect in the fields of optical computing, information encryption and polarization imaging.

Description

Technical Field

[0001] This invention relates to the field of optoelectronic technology, and in particular to a multifunctional optoelectronic logic gate device based on circularly polarized light, its fabrication method and application. This detector can realize circularly polarized light detection and reconfigurable multi-valued logic gate operations on a single device. Background Technology

[0002] Circularly polarized light (CPL) detection technology holds significant promise for applications in biomedical imaging, optical encryption, quantum information processing, and future optical computing. Traditional CPL detection systems rely on a combination of quarter-wave plates, polarizers, and conventional photodetectors, resulting in complex structures, low integration, and large size. Directly detecting CPL using intrinsically chiral optoelectronic materials eliminates the need for external polarization optical components, providing a new pathway for developing ultra-compact, high-performance polarization optoelectronic devices.

[0003] In the field of optical computing and information processing, logic gates (circularly polarized optoelectronic logic gates) that can directly process circularly polarized light signals are the basic building blocks for integrated optical computing chips. These devices utilize their different responses to left-handed and right-handed circularly polarized light to directly output "0" and "1" logic signals.

[0004] Currently, the existing technologies for realizing circularly polarized light detection and logic operations mainly fall into two categories, but both have significant shortcomings:

[0005] The first type of scheme uses chiral lead halide perovskites (e.g., ( ) as photosensitive materials to construct detectors (such as the research published by Zhang et al.). Although this type of scheme can achieve circularly polarized light detection, its core material contains the toxic heavy metal lead, which poses serious environmental and biosafety hazards. In addition, the material has poor stability in air, which restricts the practical application and long-term reliability of the device.

[0006] The second type of approach involves more advanced circularly polarized optoelectronic logic gates (such as the work reported by Huang et al.). This type of approach achieves basic logic functions through device design and signal modulation. However, its material systems largely still utilize the aforementioned toxic lead-based perovskites, failing to address the fundamental toxicity issue. Furthermore, existing logic gates typically have fixed functions, only able to achieve basic binary logic (such as AND and OR) by changing a single parameter (e.g., polarization state). It is difficult to achieve reconfigurable, multifunctional, and multi-valued logic operations on the same device through coordinated modulation of multiple parameters such as light intensity and bias voltage. Additionally, it lacks direct integration capabilities with applications such as circularly polarized imaging.

[0007] Therefore, existing technologies generally face key problems such as high material toxicity, environmental unfriendliness, single and non-switchable device functions, and difficulty in achieving multi-valued logic and system integration. Developing an environmentally friendly, stable, and lead-free circularly polarized optoelectronic logic device capable of multi-functional integration and reconfigurable logic operations on a single device has become an urgent technical challenge in this field. This invention is proposed against this backdrop. Summary of the Invention

[0008] To address the shortcomings of existing technologies, this invention provides a multifunctional optoelectronic logic gate device based on circularly polarized light, its fabrication method, and its applications.

[0009] To achieve the above-mentioned objectives, the technical solution adopted by the present invention is as follows:

[0010] A multifunctional optoelectronic logic gate device based on circularly polarized light, comprising: (The following is a list of components stacked sequentially.)

[0011] Bottom substrate;

[0012] The bottom electrode is disposed on the bottom substrate;

[0013] A chiral light-absorbing active layer disposed on the bottom electrode;

[0014] A top transparent electrode is disposed on the chiral light-absorbing active layer;

[0015] And a top transparent encapsulation layer covering the top transparent electrode;

[0016] The chiral light-absorbing active layer comprises lead-free chiral molecules, a framework material, a carrier transport material, and a stabilizer. The chiral light-absorbing active layer generates differentiated photocurrent responses to left-handed and right-handed circularly polarized light, thereby enabling circularly polarized light detection and multi-valued logic operations on a single device.

[0017] Furthermore, in the chiral light-absorbing active layer, the components by weight percentage are: 40wt%-70wt% lead-free chiral molecules, 20wt%-50wt% framework material, 5wt%-15wt% carrier transport material, and 1wt%-5wt% stabilizer, with the sum of the contents of all components being 100wt%.

[0018] Furthermore, the lead-free chiral molecule is a chiral organic amine salt, the framework material is a bismuth-based perovskite precursor, and the material of the chiral light-absorbing active layer is chiral (R / S-MBA)4Bi2I. 10 Perovskite.

[0019] Furthermore, the top transparent electrode is an interdigitated electrode or a parallel electrode, and the material is a transparent conductive oxide; the bottom electrode is a metal or alloy electrode.

[0020] Furthermore, the thickness of the chiral light-absorbing active layer is from 100 nm to 5 μm.

[0021] Furthermore, the device can achieve at least two of the following logic gate functions: YES, NOT, AND, OR, NAND, NOR, and XOR, and / or achieve binary or higher multi-valued logic outputs by coordinating the control of at least two of the three parameters: the polarization state of the incident light, the light intensity, and the bias voltage applied to the device.

[0022] Furthermore, the response band of the device is 400nm to 600nm, covering the violet, blue, cyan and green spectral range of visible light.

[0023] Furthermore, the bottom substrate is a silicon wafer with a SiO2 layer covering its surface.

[0024] This invention also discloses a method for fabricating a multifunctional optoelectronic logic gate device, comprising the following steps:

[0025] S1. Provide and clean the bottom substrate;

[0026] S2. Prepare a bottom electrode on the bottom substrate;

[0027] S3. Prepare a precursor solution containing lead-free chiral molecules, a framework material, a charge carrier transport material, and a stabilizer, and coat the precursor solution onto the bottom electrode to form a wet film;

[0028] S4. Anneal the wet film to form a chiral light-absorbing active layer;

[0029] S5. Fabricate a top transparent electrode on the chiral light-absorbing active layer;

[0030] S6. The device is packaged using a top transparent encapsulation layer.

[0031] Furthermore, in step S3, the coating is performed by spin coating, with a spin coating speed of 500 rpm to 2000 rpm and a spin coating time of 20 s to 60 s.

[0032] Furthermore, in step S4, the annealing process is carried out in a vacuum or inert gas atmosphere, the annealing temperature is 90°C to 100°C, and the annealing time is 5 min to 10 min.

[0033] This invention also discloses a method for circularly polarized light detection and logic operation, using the aforementioned multifunctional optoelectronic logic gate device, including:

[0034] Circularly polarized light is incident on the device;

[0035] The chiral light-absorbing active layer of the device generates differentiated photocurrents for left-handed and right-handed circularly polarized light.

[0036] The source meter outputs an electrical signal corresponding to the polarization state of the incident circularly polarized light.

[0037] Based on the magnitude of the electrical signal, the polarization state of the incident light is determined and a corresponding logic signal is output.

[0038] This invention also discloses a method for circularly polarized light detection and logic operation, using the aforementioned multifunctional optoelectronic logic gate device, including:

[0039] Circularly polarized light is incident on the device;

[0040] The chiral light-absorbing active layer of the device generates differentiated photocurrents for left-handed and right-handed circularly polarized light.

[0041] The electrodes output an electrical signal corresponding to the polarization state of the incident circularly polarized light.

[0042] Based on the magnitude of the electrical signal, the polarization state of the incident light is determined and the corresponding logic signal is output.

[0043] Furthermore, by adjusting at least two parameters among the intensity and polarization state of the circularly polarized light incident on the device and the bias voltage applied to the device, the device can output different logic operation results, thereby realizing the function of a reconfigurable multi-valued logic gate.

[0044] Compared with the prior art, the advantages of the present invention are as follows:

[0045] 1. Environmentally friendly and free of heavy metal pollution: It adopts a lead-free and non-toxic chiral material system, completely abandoning traditional lead-containing optoelectronic materials, eliminating environmental pollution and health risks from the source, and meeting the requirements of green electronics and sustainable development.

[0046] 2. Significantly improved circular polarization light recognition capability: Relying on the intrinsic difference in response of chiral structure to left-handed / right-handed circularly polarized light, direct recognition with high sensitivity and high signal-to-noise ratio is achieved without the need for additional complex optical components (such as quarter-wave plates and polarizers), simplifying the system structure and reducing costs.

[0047] 3. Multifunctional integration in a single device: Circular polarization detection, photocurrent output, and multi-state logic operations can be simultaneously implemented on the same device, which greatly improves the functional integration and reduces the device size and power consumption, making it suitable for optoelectronic systems with high requirements for miniaturization and portability.

[0048] 4. Fast response and high stability: The materials used have high crystallinity and few defects, resulting in high carrier transport efficiency. The device exhibits extremely slow performance degradation under environmental conditions such as air, light, and humidity, enabling long-term stable operation and a long service life.

[0049] 5. Simple fabrication process, suitable for large-area mass production: The process employs a cooling crystallization method, which is mild, requires minimal equipment, and offers good repeatability. This process is compatible with flexible substrates and is suitable for large-area mass production technologies such as roll-to-roll, significantly reducing manufacturing costs.

[0050] 6. Expanding application scenarios and market value: This device can be directly applied to high-end cutting-edge fields such as circularly polarized light detection, chiral recognition, logic storage, biomimetic imaging, and information encryption, filling the gap in the existing market for lead-free, multifunctional, and integrated optoelectronic devices.

[0051] 7. Providing core support for next-generation optical computing and optical communication: The multi-state output and fast response characteristics of the device can directly support multi-valued logic operations, optical control switching and high-speed signal processing, providing key material and device solutions for the development of low-power, high-parallel performance optical computing and optical communication technologies in the post-Moore era. Attached Figure Description

[0052] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0053] Figure 1 This is a schematic diagram of the test structure of a multifunctional optoelectronic logic gate device based on circularly polarized light in an embodiment of the present invention;

[0054] Figure 2 This is a schematic diagram of the structure of a multifunctional optoelectronic logic gate device based on circularly polarized light in an embodiment of the present invention;

[0055] In the figure, 1-laser, 2-polarizer, 3-quarter-wave plate, 4-rotatable waveplate, 5-mirror, 6-sample stage, 7-chopper, 8-optical power meter, 9-multifunctional optoelectronic logic gate device based on circularly polarized light, 10-source measurement unit, 11-computer, 12-incident light path, 13-wire, 21-chiral light-absorbing active layer, 22-gold electrode. Layer, 24-substrate. Detailed Implementation

[0056] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0057] Example 1: A chiral (R-MBA) 4Bi2I-based method 10 Fabrication of multifunctional optoelectronic logic gate devices from perovskites

[0058] This embodiment provides a specific method for fabricating a multifunctional optoelectronic logic gate device, the structural schematic of which can be found in the attached diagram. Figure 2 (The diagram illustrates the layered structure from bottom to top.) The specific steps are as follows:

[0059] 1. Substrate cleaning and pretreatment:

[0060] Take a piece with a surface covered by 300nm thick The N-type silicon wafer of layer 23 serves as substrate 24. The substrate is sequentially immersed in acetone, ethanol, and deionized water for ultrasonic cleaning for 15 minutes each, then dried with high-purity nitrogen gas, and baked on a hot plate at 120°C for 10 minutes to remove residual moisture.

[0061] 2. Fabrication of the bottom electrode:

[0062] An electron beam evaporation process was used to deposit a 5 nm thick chromium (Cr) layer as an adhesion layer on the pretreated substrate, followed by a 50 nm thick gold (Au) layer as the bottom electrode 22. The electrode pattern was defined as a simple rectangle or interdigitated shape using a mask.

[0063] (R / S-MBA)4Bi2I 10 Synthesis of single crystals: 1 mole of bismuth(III) oxide (Bi₂O₃) was dissolved in 10 mL of hydroiodic acid (HI) and 1 mL of hypophosphorous acid (…). In a mixed solution of (R-methylbenzylamine iodide) and (R-MBA)I, the mixture was continuously stirred magnetically at approximately 100°C. Once the solution became clear and transparent, 2 moles of R-methylbenzylamine iodide (R-MBA)I were added. After 30 minutes, heating and stirring were stopped, and the solution was cooled to room temperature at a rate of 5°C per hour and allowed to stand overnight. During this process, the orange-red (R-MBA)4Bi2I... 10 Crystals began to precipitate. After filtration and separation, the sample was dried overnight to obtain pure chiral zero-dimensional perovskite (R-MBA)4Bi2I. 10 Crystal. (S-MBA)₄Bi₂I was prepared using the same steps. 10 The only difference is that R-MBAI is replaced with S-MBAI.

[0064] (R / S-MBA)4Bi2I 10 Thin film preparation: 0.118 g of (R-MBA)4Bi2I 10 A precursor solution was prepared by dissolving crystals in 0.3 g of anhydrous N,N-dimethylformamide (DMF). The precursor solution was then spin-coated onto a substrate for 1 minute at low speed (500 rpm, 10 seconds) and high speed (2000 rpm, 50 seconds). Finally, the substrate was annealed at 80°C for 10 minutes to induce crystallization. The precursor solution can be replaced simply with (S-MBA)₄Bi₂I. 10 (S-MBA)4Bi2I can be easily prepared. 10 film.

[0065] 3. Spin-coating perovskite thin film (forming a chiral light-absorbing active layer 21):

[0066] The substrate with the bottom electrode obtained in step 2 was fixed on a spin coater, and 50 μL of the precursor solution prepared in step 3 was dropped onto the electrode area. The solution was first spin-coated at 500 rpm for 10 seconds to spread, and then at 2000 rpm for 30 seconds. In the last 5 seconds before the spin coating was completed, 200 μL of the antisolvent chlorobenzene (CB) was added for quenching to promote rapid nucleation of perovskite crystals.

[0067] 4. Thin film annealing:

[0068] The spin-coated film was immediately transferred to a heating stage and annealed at 100°C for 10 minutes in a nitrogen atmosphere. After annealing, it was allowed to cool naturally to room temperature to obtain a uniform, glossy chiral (R-MBA)4Bi2I. 10 The perovskite film has a thickness of approximately 350 nm.

[0069] 5. Device packaging:

[0070] UV-curable adhesive is applied to the surface of the device and covered with a thin glass cover. The adhesive is then cured under UV light to form a top transparent encapsulation layer, thus completing the device fabrication.

[0071] Example 2: Device Performance Testing and Logic Function Verification

[0072] To verify the performance of the circularly polarized optoelectronic logic gate device prepared in Example 1, a system was constructed as follows: Figure 1The test system shown is mainly composed of optical excitation, device loading, electrical measurement, and data acquisition sections. Optical excitation unit: A laser 1 with a wavelength of 532 nm and a maximum output power of 30 mW serves as the light source. The laser beam passes sequentially through a polarizer 2, a quarter-wave plate 3, and a precisely rotatable waveplate 4 to generate left-hand or right-hand circularly polarized light with tunable purity. After being guided by a reflector 5, the beam is modulated into an AC signal of a specific frequency by a chopper 7 and finally incident perpendicularly onto the effective region of the device under test (DUT) 9. The incident light power is monitored in real time by an optical power meter 8. Device loading and biasing unit: The DUT 9 is fixed on a probe stage, and its electrodes are connected to a Keithley source meter 10 via probes and wires 13. Data acquisition and analysis unit: The source meter 10 is responsible for providing bias voltage to the device and measuring the photocurrent signal it generates. After being processed by a preamplifier, the signal is demodulated by a lock-in amplifier (not shown separately in the diagram, but usually linked with a chopper) and finally transmitted to computer 11 for recording and analysis. The entire test is conducted in a dark box to shield against ambient light interference.

[0073] The device prepared in Example 1 was subjected to performance characterization and logic function testing.

[0074] 1. Photoelectric properties and circular polarization detection:

[0075] The device was placed on a probe station and connected to a semiconductor parameter analyzer. The effective region of the device was illuminated using a light source (wavelength 532 nm) capable of outputting left-handed circularly polarized (LCP) and right-handed circularly polarized (RCP) light. The photocurrent response of the device to LCP and RCP was measured at a bias voltage of 1 V. The results showed that the device responded to the photocurrent of LCP (… The photocurrent of RCP is significantly higher than that of RCP. ), anisotropy factor of circularly polarized photocurrent ( The calculated value reaches 0.15, indicating that it has excellent direct circularly polarized light detection capability.

[0076] 2. Implementation of reconfigurable logic gate functionality:

[0077] The incident light polarization state and the applied bias voltage are defined as two input logic signals ("0" or "1"). The output photocurrent is converted by a comparator and used as the logic output.

[0078] The “YES” and “NOT” gates have a fixed bias of 1V (logic “1”). When the incident light is LCP (logic “1”), the output is high (logic “1”), implementing the “YES” gate function; when the incident light is RCP (logic “0”), the output is low (logic “0”), implementing the “NOT” gate function (when LCP is used as the reference).

[0079] The "AND" gate is defined with the following logic inputs: LCP = "1", RCP = "0"; bias voltage ≥ 1V = "1", bias voltage = 0V = "0". The output is a high level "1" only when the input is (LCP, 1V). The output is "0" for the other three input combinations (LCP, 0V), (RCP, 1V), and (RCP, 0V), perfectly implementing the "AND" logic truth table.

[0080] The "OR" gate adjusts the threshold of the current comparator. The output is "1" when the input is (LCP, 1V), (LCP, 0V), or (RCP, 1V); the output is "0" only when the input is (RCP, 0V), thus implementing the "OR" logic function.

[0081] 3. Demonstration of multi-valued logic output:

[0082] By finely adjusting the incident light intensity (the third parameter), the output photocurrent of the device can switch between multiple discrete stable levels under a fixed polarization state and bias voltage. By setting three different current thresholds, the output can be distinguished into four states: "00", "01", "10", and "11", successfully realizing a four-valued logic output and demonstrating its application potential in multi-valued computation and high-density information encoding.

[0083] Example 3: An Alternative Implementation Based on S-Chiral Molecules

[0084] The main difference between this embodiment and Example 1 lies in the chiral molecules and the precursor solution formulation:

[0085] S-methylbenzylamine hydroiodide (S-MBAI) was used instead of R-MBAI, with other steps and parameters the same as in Example 1. The resulting device exhibited a chiral response opposite to that of the device in Example 1, i.e., a stronger photocurrent response to RCP than to LCP. This device also achieved the various reconfigurable logic functions described in Example 2. This demonstrates that the invention is not limited to molecules with specific chiral configurations, and its technical solution is applicable to both R-type and S-type chiral molecules.

[0086] In summary, this invention successfully fabricated a multifunctional optoelectronic logic gate device based on lead-free chiral perovskite through specific material formulations, device structures, and fabrication processes. This device effectively overcomes the toxicity and stability issues of existing lead-based devices. Furthermore, through the coordinated control of multiple parameters such as polarization state, light intensity, and bias voltage, it achieves various reconfigurable logic operations and multi-valued outputs on a single device, verifying the effectiveness, advancement, and practicality of the technical solution of this invention.

[0087] The above-described embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included within the protection scope of the present invention.

Claims

1. A multifunctional optoelectronic logic gate device based on circularly polarized light, characterized in that, Including those set up in a stacked manner: Bottom substrate; The bottom electrode is disposed on the bottom substrate; A chiral light-absorbing active layer disposed on the bottom electrode; A top transparent electrode is disposed on the chiral light-absorbing active layer; And a top transparent encapsulation layer covering the top transparent electrode; The chiral light-absorbing active layer comprises lead-free chiral molecules, a framework material, a carrier transport material, and a stabilizer. The chiral light-absorbing active layer generates differentiated photocurrent responses to left-handed and right-handed circularly polarized light, thereby enabling circularly polarized light detection and multi-valued logic operations on a single device.

2. The multifunctional optoelectronic logic gate device according to claim 1, characterized in that, The chiral light-absorbing active layer comprises the following components by weight percentage: 40wt%-70wt% lead-free chiral molecules, 20wt%-50wt% framework material, 5wt%-15wt% carrier transport material, and 1wt%-5wt% stabilizer, with a total content of 100wt%.

3. The multifunctional optoelectronic logic gate device according to claim 1 or 2, characterized in that, The lead-free chiral molecule is a chiral organic amine salt, the framework material is a bismuth-based perovskite precursor, and the material of the chiral light-absorbing active layer is chiral (R / S-MBA)4Bi2I. 10 Perovskite.

4. The multifunctional optoelectronic logic gate device according to claim 1, characterized in that, The top transparent electrode is an interdigitated electrode or a parallel electrode, and the material is a transparent conductive oxide; the bottom electrode is a metal or alloy electrode.

5. The multifunctional optoelectronic logic gate device according to claim 1, characterized in that, The thickness of the chiral light-absorbing active layer is 100 nm to 5 μm.

6. The multifunctional optoelectronic logic gate device according to claim 1, characterized in that, The device achieves at least two of the following logic gate functions: YES, NOT, AND, OR, NAND, NOR, and XOR, and / or implements binary or higher multi-valued logic outputs by coordinating the control of at least two of the three parameters: the polarization state of the incident light, the light intensity, and the bias voltage applied to the device.

7. The multifunctional optoelectronic logic gate device according to claim 1, characterized in that, The device has a response wavelength of 400nm to 600nm, covering the violet, blue, cyan and green spectral range of visible light.

8. A method for fabricating a multifunctional optoelectronic logic gate device according to any one of claims 1 to 7, characterized in that, Includes the following steps: S1. Provide and clean the bottom substrate; S2. Prepare a bottom electrode on the bottom substrate; S3. Prepare a precursor solution containing lead-free chiral molecules, a framework material, a charge carrier transport material, and a stabilizer, and coat the precursor solution onto the bottom electrode to form a wet film; S4. Anneal the wet film to form a chiral light-absorbing active layer; S5. Fabricate a top transparent electrode on the chiral light-absorbing active layer; S6. The device is packaged using a top transparent encapsulation layer.

9. The preparation method according to claim 8, characterized in that, In step S3, the coating is performed by spin coating, with a spin coating speed of 500 rpm to 2000 rpm and a spin coating time of 20 s to 60 s.

10. A method for circularly polarized light detection and logic operation, characterized in that, The multifunctional optoelectronic logic gate device according to any one of claims 1 to 7 includes: Circularly polarized light is incident on the device; The chiral light-absorbing active layer of the device generates differentiated photocurrents for left-handed and right-handed circularly polarized light. The source meter outputs an electrical signal corresponding to the polarization state of the incident circularly polarized light. Based on the magnitude of the electrical signal, the polarization state of the incident light is determined and the corresponding logic signal is output.

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