A phase-locked multi-path microstrip meander line slow wave structure and a traveling wave tube

Abstract

The application discloses a phase-locked multi-path microstrip meander line slow wave structure and a traveling wave tube, and relates to the technical field of microwave electric vacuum, which comprises a microstrip meander slow wave line group, a phase locking structure and a substrate, the microstrip meander slow wave line group comprises at least two parallel meander metal conductive strips, the meander metal conductive strip can be any periodic meander structure, such as a U-shaped structure, a V-shaped structure, an N-shaped structure and the like; the phase locking structure comprises a plurality of groups of coupling connection sections, the coupling connection sections can be connected to any two adjacent meander metal conductive strips; and the substrate is a layered structure, which can be a single dielectric substrate layer, a conductive substrate layer or a structure in which a conductive layer is laid on the dielectric substrate layer. The application can solve the problems of significant decrease in synthesis efficiency of the multi-path parallel slow wave structure, easy occurrence of output signal distortion, power sudden drop and device damage.

Description

Technical Field

[0001] This invention relates to the field of microwave vacuum technology, specifically to a phase-locked multi-channel microstrip zigzag slow-wave structure and traveling-wave tube. Background Technology

[0002] A traveling wave tube (TWT) is a microwave vacuum tube that amplifies microwave signals by transferring the energy of a high-energy electron beam to the high-frequency field of a traveling wave through the interaction of an electron beam with the traveling wave. It is widely used in communications, radar, and electronic warfare. Its main structure generally includes: an electron gun, a focusing system, a slow-wave structure, input / output devices, and a collector.

[0003] To improve the output power of planar microstrip zigzag traveling wave tubes, the most effective technical approach is to use a dual-beam or multi-beam microstrip zigzag slow-wave structure. This structure can increase the total electron beam current without significantly increasing the device size, thereby achieving higher output power and gain.

[0004] However, multi-parallel slow-wave structures face a core challenge in practical engineering: due to manufacturing tolerances and parasitic circuit parameters, the electrical lengths of adjacent microstrip meandering slow-wave structures are difficult to be strictly consistent, leading to phase mismatch at the power combining points at the slow-wave line ends, resulting in a significant decrease in combining efficiency. Furthermore, since the two slow-wave lines connect the power divider at the signal input and the power combining structure at the output, they physically form a closed positive feedback loop. When the signals of the various slow-wave lines are out of phase and meet specific oscillation conditions, loop oscillation will be triggered, causing distortion of the traveling-wave tube output signal, a sudden drop in power, and even device damage.

[0005] Therefore, this application is hereby submitted. Summary of the Invention

[0006] The purpose of this invention is to provide a phase-locked loop multi-channel microstrip zigzag slow-wave structure to solve the problems of significantly reduced synthesis efficiency, easy output signal distortion, power drop and device damage in multi-channel parallel slow-wave structures.

[0007] This invention is achieved through the following technical solution: A phase-locked loop (PLL) multi-channel microstrip zigzag slow-wave structure includes: a microstrip zigzag slow-wave line group for propagating electromagnetic wave signals, wherein the microstrip zigzag slow-wave line group includes at least two parallel zigzag metal conductors, the zigzag metal conductors being any kind of periodic zigzag structure; adjacent zigzag metal conductors are arranged in parallel at intervals; a phase-locking structure, the phase-locking structure including several sets of coupling connection segments, wherein a set of coupling connection segments is provided between any two adjacent zigzag metal conductors, so that adjacent zigzag metal conductors are connected through the coupling connection segments; and a substrate, the substrate having a bearing plane, wherein the zigzag metal conductors and the coupling connection segments are all connected to the bearing plane.

[0008] In another preferred embodiment, the spacing between two adjacent tortuous metal conductors is d, 0 < d ≤ λ, λ = c / f; where: c is the speed of light, and f is the design operating frequency of the microstrip tortuous slow wave line group.

[0009] In another preferred embodiment, when the microstrip zigzag slow wave line group has more than two parallel zigzag metal conductors, the spacing between two adjacent sets of coupling connection segments is ≤k, 0<k<b; where: b is the width of the substrate.

[0010] In another preferred embodiment, the substrate has a layered structure, which is a dielectric substrate layer, a conductive substrate layer, or a structure in which the conductive substrate layer is laid flat on the dielectric substrate layer; when the substrate is the dielectric substrate layer, the substrate is connected to the tortuous metal conductive strip and the coupling connection segment; when the substrate is the conductive substrate layer or a structure in which the conductive substrate layer is laid flat on the dielectric substrate layer, a dielectric layer conformally to the tortuous metal conductive strip and the coupling connection segment is connected between the substrate and the tortuous metal conductive strip and the coupling connection segment.

[0011] In another preferred embodiment, the dielectric substrate layer is made of a highly insulating, low-loss material, including but not limited to any one or more combinations of beryllium oxide, silicon oxide, silicon nitride, aluminum oxide, boron nitride, and diamond; the conductive substrate layer is made of a metal or semiconductor; and the thickness of the dielectric substrate layer is 50 μm-5 mm.

[0012] In another preferred embodiment, the materials of the tortuous metal conductor and the coupling connection segment include, but are not limited to, any one or more combinations of gold, silver and copper.

[0013] In another preferred embodiment, the thickness of the zigzag metal conductor is 1-100 μm, the line width is 5-150 μm, the lateral width of the zigzag line is 0.2-3 mm, and the spacing between two adjacent inner zigzag segments or two adjacent outer zigzag segments is 50-1000 μm.

[0014] In another preferred embodiment, the system further includes: a power splitting structure connected to the beginning of all the zigzag metal conductors along their length; a power combining structure connected to the end of all the zigzag metal conductors along their length; and a pair of impedance matching structures connected to the power splitting structure and the power combining structure, respectively. The ends of the impedance matching structures furthest from the power splitting structure and the power combining structure extend to the edge of the substrate to form an input port and an output port, respectively. The power splitting structure, the power combining structure, and the impedance matching structures are all tightly fitted and connected to the bearing plane.

[0015] A traveling wave tube comprising any of the above-mentioned phase-locked multi-channel microstrip zigzag slow-wave structures.

[0016] The present invention, by adopting the above-mentioned technical solution, has the following positive effects compared with the prior art: This invention discloses a phase-locked multi-channel microstrip zigzag slow-wave structure. By setting up a group of microstrip zigzag slow-wave lines, at least two parallel zigzag metal conductors are formed, creating a periodic zigzag structure, such as U-shaped, V-shaped, or N-shaped, which forms the structural basis for subsequent structures. Based on this, a phase-locking structure is set up, including several sets of coupling connection segments. These coupling connection segments connect the closely spaced and aligned inner or outer zigzag segments of adjacent zigzag metal conductors, introducing coupling connection segments between adjacent zigzag metal conductors. This forces the propagation phase of each zigzag metal conductor to tend towards consistency, thereby eliminating the problem at its source. Aside from phase mismatch caused by machining tolerances and parasitic parameters, the phase-locked structure shares the same planar circuit with the microstrip zigzag slow-wave line group, eliminating the need for additional isolation resistors or other lumped components. This effectively disrupts the conditions for loop oscillation while achieving phase synchronization. Furthermore, a substrate is provided to support the microstrip zigzag slow-wave line group and the phase-locked structure, ensuring they share the same planar circuit. Through the synergy of these features, this phase-locked multi-channel microstrip zigzag slow-wave structure effectively solves the problems of significantly reduced synthesis efficiency, easy output signal distortion, power drop, and device damage associated with multi-channel parallel slow-wave structures. Attached Figure Description

[0017] The accompanying drawings, which are included to provide a further understanding of embodiments of the invention and form part of this application, do not constitute a limitation thereof. In the drawings: Figure 1 A schematic diagram of a phase-locked multi-channel microstrip zigzag slow-wave structure provided in an embodiment of the present invention; Figure 2 This is a partially enlarged schematic diagram of a phase-locked multi-channel microstrip zigzag slow-wave structure provided in an embodiment of the present invention; Figure 3A schematic diagram of a structure for modifying one of the channels of a dual-channel microstrip zigzag slow-wave structure without phase-locked structure to create a phase difference; Figure 4 for Figure 3 A schematic diagram of the structure after adding the phase-locked structure; Figure 5 for Figure 3 A comparison of the phase curves of the transmission parameters of port 2 and port 3; Figure 6 for Figure 4 A comparison of the phase curves of the transmission parameters of port 2 and port 3; Figure 7 and Figure 9 for Figure 3 Simulation of the beam-wave interaction of the structure, including the output amplitude curve and output signal spectrum; Figure 8 and Figure 10 for Figure 4 The output amplitude curve and output signal spectrum of the 100 ns beam-wave interaction simulation of the structure; Figure 11 for Figure 3 and Figure 4 A comparison of the coupling impedance curves of the structures; Figure 12 for Figure 3 and Figure 4 The output power simulation results of the structure are compared in the curve.

[0018] The attached diagram shows the markings and corresponding component names: 1-Power divider structure; 2-Power combining structure; 3-Impedance matching structure; 4-Input port; 5-Output port; 6-Port 2; 7-Port 3; 8-Fabrication of phase difference microstrip line; 10-Bent-bend metal conductor strip; 11-Inner curved section; 12-Outer curved section; 20-Coupled connection section; 30-Substrate. Detailed Implementation

[0019] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0020] In the description of this invention, it should be understood that the orientation or positional relationship indicated by terms such as "upper", "lower", "left", "right", "inner", "outer", "front", "rear", "lateral", and "vertical" are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this invention, and are not intended to indicate or imply that the device or component referred to must have a specific orientation, and therefore should not be construed as a limitation of this invention.

[0021] It should be noted that the terms "horizontal" and "vertical" in this invention are used to describe approximate positional relationships, and not strictly "horizontal plane" or "vertical plane".

[0022] Please refer to Figure 1 and Figure 2 As shown, this embodiment provides a phase-locked multi-channel microstrip zigzag slow-wave structure. First, it includes a microstrip zigzag slow-wave line group for propagating electromagnetic wave signals. The microstrip zigzag slow-wave line group includes at least two parallel zigzag metal conductors 10, each zigzag metal conductor 10 being any kind of periodic zigzag structure. Adjacent zigzag metal conductors 10 are arranged parallel and spaced apart. Second, it includes a phase-locking structure, such as a U-shape, V-shape, or N-shape. The phase-locking structure includes several sets of coupling connection segments 20. A set of coupling connection segments 20 is provided between any two adjacent zigzag metal conductors 10, so that adjacent zigzag metal conductors 10 are connected through the coupling connection segments 20. Third, it includes a substrate 30, which has a bearing plane. The zigzag metal conductors 10 and the coupling connection segments 20 are both connected to the bearing plane. The substrate 30 is a layered structure, which can be a dielectric substrate layer, a conductive substrate layer, or a structure in which a conductive layer is laid flat on a dielectric substrate layer. When the substrate 30 is a dielectric substrate layer, the substrate 30 is connected to the tortuous metal conductor 10 and the coupling connection section 20; when the substrate 30 is a conductive substrate layer or a conductive layer structure laid flat on a dielectric substrate layer, a dielectric layer conforming to the tortuous metal conductor 10 and the coupling connection section 20 is connected between the substrate 30, the tortuous metal conductor 10 and the coupling connection section 20 to achieve insulation.

[0023] This invention discloses a phase-locked multi-channel microstrip zigzag slow-wave structure. By setting up a group of microstrip zigzag slow-wave lines, at least two parallel zigzag metal conduction strips 10 are formed as a foundation. These zigzag metal conduction strips 10 form a periodic zigzag structure, providing a structural basis for subsequent structures. Based on this, a phase-locking structure is set up, including several sets of coupling connection segments 20. These coupling connection segments 20 connect adjacent zigzag metal conduction strips 10, introducing coupling segments between adjacent zigzag metal conduction strips 10. This forces the propagation phase of each zigzag metal conduction strip 10 to tend towards consistency, thereby eliminating interference at the source. Phase mismatch caused by tolerances and parasitic parameters; and the phase-locked structure and the microstrip zigzag slow-wave line group share the same planar circuit, eliminating the need for additional isolation resistors or other lumped components, effectively disrupting the conditions for loop oscillation while achieving phase synchronization; on this basis, a substrate 30 is set to support the microstrip zigzag slow-wave line group and the phase-locked structure, and both share the same planar circuit; through the cooperation of the above features, the phase-locked multi-channel microstrip zigzag slow-wave structure can effectively solve the problems of significantly reduced synthesis efficiency, easy output signal distortion, power drop and device damage in multi-channel parallel slow-wave structures.

[0024] It should be noted that the aforementioned tortuous metal conductor 10 can be any kind of periodic tortuous structure, such as a minimum period of U-shape, V-shape, N-shape, etc., as long as it is tortuous.

[0025] It should be noted that, in this embodiment, the aforementioned tortuous metal guide strip 10 includes multiple inner curved sections 11 and multiple outer curved sections 12. The inner curved sections 11 and the outer curved sections 12 are U-shaped structures with opposite opening directions. The inner curved sections 11 and the outer curved sections 12 are connected alternately in sequence. Furthermore, the inner curved sections 11 of two adjacent tortuous metal guide strips 10 are arranged close to each other and aligned, or the outer curved sections 12 of two adjacent tortuous metal guide strips 10 are arranged close to each other and aligned.

[0026] It should be noted that in this embodiment, the coupling connection segment 20 connects a pair of inner curved segments 11 or outer curved segments 12 that are close to each other and aligned.

[0027] It should be noted that the above-mentioned coupling connection segment 20 can be of any shape, as long as it can connect two adjacent tortuous metal conductors 10. For example, the shape can be any planar or spatial geometric shape, including but not limited to straight lines, broken lines, curves or combinations thereof, and can be one or more sets.

[0028] To further limit the spacing between two adjacent tortuous metal conductor strips 10, the spacing between the two adjacent tortuous metal conductor strips 10 is d, 0<d≤λ, λ=c / f; where: c is the speed of light, and f is the design operating frequency of the microstrip tortuous slow wave line group.

[0029] To further limit the spacing between adjacent sets of coupling connection segments 20, when the microstrip zigzag slow wave line group has more than two parallel zigzag metal conductors 10, the spacing between adjacent sets of coupling connection segments 20 is ≤k, 0<k<b; where: b is the width of the substrate 30.

[0030] To further explain the specific structure of the substrate 30, the substrate 30 has a layered structure, which may be a dielectric substrate layer, a conductive substrate layer, or a structure in which a conductive substrate layer is laid flat on a dielectric substrate layer; when the substrate 30 is the dielectric substrate layer, the substrate 30 is connected to the tortuous metal conductive strip 10 and the coupling connection segment 20; when the substrate 30 is the conductive substrate layer or a structure in which a conductive substrate layer is laid flat on a dielectric substrate layer, a dielectric layer conformally to the tortuous metal conductive strip 10 and the coupling connection segment 20 is connected between the substrate 30 and the tortuous metal conductive strip 10 and the coupling connection segment 20 to achieve insulation.

[0031] To further explain the materials of the dielectric substrate and the conductive substrate, the dielectric substrate is made of a high-insulation, low-loss material, including but not limited to any one or more combinations of beryllium oxide, silicon oxide, silicon nitride, aluminum oxide, boron nitride, and diamond; the conductive substrate is made of a metal or a semiconductor; and the thickness of the dielectric substrate is 50 μm-5 mm.

[0032] To further explain the materials of the tortuous metal conductor 10 and the coupling connection section 20, the materials of the tortuous metal conductor 10 and the coupling connection section 20 include, but are not limited to, any one or more combinations of gold, silver and copper.

[0033] To further define the dimensional parameters of the zigzag metal guide strip 10, the thickness of the zigzag metal guide strip 10 is 1-100μm, the line width is 5-150μm, the lateral width of the zigzag line is 0.2-3mm, and the spacing between two adjacent inner curved segments 11 or two adjacent outer curved segments 12 is 50-1000μm.

[0034] Please refer to further details. Figure 1The aforementioned phase-locked multi-channel microstrip tortuous slow-wave structure further includes a power divider structure 1, a power combining structure 2, and a pair of impedance matching structures 3. The power divider structure 1 is connected to the beginning of the entire tortuous metal conductor 10 along its length; the power combining structure 2 is connected to the end of the entire tortuous metal conductor 10 along its length; the two impedance matching structures 3 are respectively connected to the power divider structure 1 and the power combining structure 2, and the end of the impedance matching structure 3 away from the power divider structure 1 and the power combining structure 2 extends to the edge of the substrate 30 to form an input port 4 and an output port 5, respectively; the power divider structure 1, the power combining structure 2, and the impedance matching structure 3 are all tightly fitted and connected to the bearing plane. Example

[0035] Please refer to Figure 1 and 2 This embodiment provides a phase-locked multi-channel microstrip zigzag slow-wave structure, including: The microstrip zigzag slow wave line assembly is used to propagate electromagnetic wave signals. The microstrip zigzag slow wave line assembly includes two parallel zigzag metal conductors 10, which are suitable for dual-beam traveling wave tubes. The thickness of the zigzag metal conductors 10 is 20μm, the linewidth a is 55μm, the lateral width w of the zigzag line is 0.935mm, and the spacing l between two adjacent inner zigzag segments 11 or two adjacent outer zigzag segments 12 is 320μm. The phase-locking structure includes several sets of coupling connection segments 20. These coupling connection segments 20 can connect any two adjacent tortuous metal conductors 10. Any pair of inner curved segments 11 or outer curved segments 12 that are close to each other and aligned are connected by a coupling connection segment 20 and are integrally formed. The spacing d between two adjacent coupling connection segments 20 is 0.2 mm, and the spacing between two adjacent sets of coupling connection segments 20 is 320 μm. The substrate 30 is set as a bearing plane. The tortuous metal guide strip 10 and the coupling connection section 20 are both tightly attached to and connected to the bearing plane. The thickness of the substrate is 200μm. Example

[0036] This application also provides a traveling wave tube, including any of the above-mentioned phase-locked multichannel microstrip zigzag slow wave structures.

[0037] Experimental Example This experimental example demonstrates the three core beneficial effects of the phase-locked structure: suppressing loop oscillations, achieving phase locking, and improving coupling impedance and output power. The specific experimental content is as follows: 1. To simulate phase mismatch caused by manufacturing errors, this experimental example specifically modified the local dimensions of one of the tortuous metal conductive strips 10 to create a phase difference (at point 8 of the phase difference microstrip line). A schematic diagram of its structure is shown below. Figure 3 (Modify one path) and Figure 4(After adding a phase-locked structure). For the non-phase-locked structure ( Figure 3 ) and phase-locked structures ( Figure 4 Simulations were performed using the model. Figure 5 and Figure 6 The phase curves of the transmission parameters of the two output ports (port 2) 6 and (port 3) 7 are shown in two different cases.

[0038] Figure 5 (No phase-locked structure): Within the center frequency band, the phase difference (ΔΦ) between the two curves is large, indicating that the difference in the length of the two electrical paths caused by the manufacturing error will lead to the output signal being out of phase.

[0039] Figure 6 (With phase-locked structure): Under the condition of a pre-existing phase difference, after introducing a phase-locked structure, the two phase curves almost completely overlap, and ΔΦ approaches zero. This intuitively demonstrates that the phase-locked structure can force the signal phases of the two paths to synchronize, effectively compensate for processing errors, and ensure power combining efficiency.

[0040] II. Oscillation Suppression and Stability Verification: Long-term PIC simulation was performed on a full model containing complete beam-wave interaction in CST electromagnetic simulation software.

[0041] Figure 7 The output signal amplitude curve of the traveling wave tube without a phase-locked loop structure is shown. Significant amplitude fluctuations and loop oscillations can be observed in the output signal, indicating that the device is extremely unstable. Figure 8 The simulation results of the beam-wave interaction with a phase-locked structure over a period of 100 ns are presented. The output signal amplitude curve is stable and shows no signs of oscillation.

[0042] Figure 9: The output signal spectrum of the phase-locked structure is shown. The spectrum curve is quite messy, indicating that the output signal is spurious and impure. Figure 10 : This is the spectrum of the output signal containing the phase-locked structure, displayed as a single, pure spectral line with no spurious spectra.

[0043] Figures 7 to 10 This strongly demonstrates that the phase-locked structure completely destroys the oscillation circuit, eliminates loop oscillation, and ensures the high stability of the traveling wave tube.

[0044] III. Performance Improvement Verification: Figure 11Coupled impedance comparison curves. This figure shows the change in coupling impedance of the slow-wave structure with frequency before and after adding the phase-locked structure. Simulation results show that with the phase-locked structure, the coupling impedance is improved by approximately 8.2% across the entire frequency band due to the optimized field distribution. Higher coupling impedance means higher energy exchange efficiency between the electron beam and the slow-wave field.

[0045] Figure 12 Output power comparison curve. This figure shows the simulation results of the traveling wave tube's output power as a function of frequency before and after adding the phase-locked loop structure, under the same operating current. The curve comparison shows that, thanks to the increased coupling impedance, the traveling wave tube with the phase-locked loop structure has a higher output power across the entire operating frequency band than the traditional non-phase-locked loop structure, with an increase of 2-7W. This empirically demonstrates that the present invention achieves an increase in output power while solving the stability problem.

[0046] The above description is merely a preferred embodiment of the present invention and does not limit the implementation and protection scope of the present invention. Those skilled in the art should realize that any equivalent substitutions and obvious changes made based on the description and illustrations of the present invention should be included within the protection scope of the present invention.

Claims

1. A phase-locked multi-channel microstrip zigzag slow-wave structure, characterized in that, include: A microstrip zigzag slow wave line group is used to propagate electromagnetic wave signals. The microstrip zigzag slow wave line group includes at least two parallel zigzag metal conductors (10). The zigzag metal conductors (10) are any kind of periodic zigzag structure. Two adjacent zigzag metal conductors (10) are arranged in parallel at intervals. A phase-locking structure, the phase-locking structure includes several sets of coupling connection segments (20), and a set of coupling connection segments (20) is provided between any two adjacent tortuous metal conductors (10) so that the two adjacent tortuous metal conductors (10) are connected through the coupling connection segments (20); The substrate (30) is provided with a bearing plane, and the tortuous metal guide strip (10) and the coupling connection section (20) are both connected to the bearing plane.

2. The phase-locked multi-channel microstrip zigzag slow-wave structure according to claim 1, characterized in that, The distance between two adjacent tortuous metal conductor strips (10) is d, 0 < d ≤ λ, λ = c / f; Where: c is the speed of light, and f is the design operating frequency of the microstrip tortuous slow-wave line group.

3. The phase-locked multi-channel microstrip zigzag slow-wave structure according to claim 2, characterized in that, When the microstrip tortuous slow wave line group has more than two parallel tortuous metal conductors (10), the spacing between two adjacent sets of coupling connection segments (20) is ≤k, 0<k<b; Where: b is the width of the base (30).

4. The phase-locked multi-channel microstrip zigzag slow-wave structure according to claim 1, characterized in that, The substrate (30) has a layered structure, which is a dielectric substrate layer, a conductive substrate layer, or a structure in which the conductive substrate layer is laid flat on the dielectric substrate layer; when the substrate (30) is the dielectric substrate layer, the substrate (30) is connected to the tortuous metal conductor (10) and the coupling connection segment (20); when the substrate (30) is the conductive substrate layer or a structure in which the conductive substrate layer is laid flat on the dielectric substrate layer, a dielectric layer conforming to the tortuous metal conductor (10) and the coupling connection segment (20) is connected between the substrate (30) and the tortuous metal conductor (10) and the coupling connection segment (20).

5. The phase-locked multi-channel microstrip zigzag slow-wave structure according to claim 4, characterized in that, The dielectric substrate layer is made of a highly insulating, low-loss material, including but not limited to any one or more combinations of beryllium oxide, silicon oxide, silicon nitride, aluminum oxide, boron nitride, and diamond. The conductive substrate layer is made of metal or semiconductor; The thickness of the dielectric substrate layer is 50μm-5mm.

6. The phase-locked multi-channel microstrip zigzag slow-wave structure according to claim 1, characterized in that, The materials of the tortuous metal conductor (10) and the coupling connection section (20) include, but are not limited to, any one or more combinations of gold, silver and copper.

7. The phase-locked multi-channel microstrip zigzag slow-wave structure according to claim 6, characterized in that, The thickness of the tortuous metal guide strip (10) is 1-100μm, the line width is 5-150μm, the lateral width of the tortuous line is 0.2-3mm, and the distance between two adjacent inner curved sections (11) or two adjacent outer curved sections (12) is 50-1000μm.

8. The phase-locked multi-channel microstrip zigzag slow-wave structure according to any one of claims 1-7, characterized in that, Also includes: The power distribution structure (1) is connected to the first end of all the meandering metal conductors (10) along their length. A power combining structure (2) is connected to the tail end of all the meandering metal conductors (10) along their length. A pair of impedance matching structures (3), the two impedance matching structures (3) are respectively connected to the power dividing structure (1) and the power combining structure (2), and the end of the impedance matching structure (3) away from the power dividing structure (1) and the power combining structure (2) extends to the edge of the substrate (30) to form an input port (4) and an output port (5) respectively. The power distribution structure (1), the power combining structure (2), and the impedance matching structure (3) are all tightly fitted and connected to the bearing plane.

9. The phase-locked multi-channel microstrip zigzag slow-wave structure according to claim 1, characterized in that, When the two adjacent zigzag metal conductors (10) are arranged in a translational symmetrical manner, the coupling connection section (20) can also selectively connect the proximal bending section of one path with the distal bending section of the other path.

10. A traveling wave tube, characterized in that, Including the phase-locked multiplex microstrip zigzag slow-wave structure as described in any one of claims 1-9.

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