Multi-single-tube semiconductor laser diode densely-arranged beam shaping and coupling device

Abstract

The utility model provides a multi-single-tube semiconductor laser diode densely-arranged beam shaping and coupling device, comprising a semiconductor array laser used for emitting a first beam array and carrying out fast and slow axis collimation to obtain a second beam array; the light beam reflection separation system is used for performing separation arrangement on the second light beam array; the fast and slow axis conversion system is arranged on a light path where the light beam is emitted by the light beam reflection separation system and used for rotating the fast and slow axis of the second light beam array which is separated and arranged by 90 degrees; the confocal beam shrinking and expanding system is used for simultaneously focusing the fast axis light spots and the slow axis light spots of the separated and arranged second light beam array and then carrying out fast axis beam shrinking and slow axis beam expanding to obtain a third light beam array; the light beam reflecting and combining system is arranged on the light beam emergent light path of the confocal beam shrinking and expanding system and is used for closely arranging the third light beam array; and the focusing system is arranged on a light path where the light beams are emitted by the light beam reflecting and combining system, and is used for focusing the light spots of the closely arranged third light beam array to a target size.

Description

Technical Field

[0001] The utility model relates to the technical field of laser devices, in particular to a beam shaping coupling device with densely arranged multiple single-tube semiconductor laser diodes. Background Art

[0002] In the prior art, there are roughly two ways of shaping coupling of semiconductor laser diodes. One is to first collimate the fast axis of the long strips (bars) of semiconductor laser diodes arranged side by side, and then use a cylindrical mirror array to compress the slow axis of each diode. Because such lasers are arranged too closely, if the spots are to not interfere with each other, the slow axis focal length of the cylindrical mirror array for slow axis collimation cannot be made large, which results in a large focal spot in the slow axis direction during coupling. In view of the obvious disadvantages of this shaping coupling method, another bar shaping coupling method has been developed, that is, first collimate the fast axis of each diode of the bar, use a fast-slow axis conversion lens group to rotate the fast-slow axis of each spot in the bar by 90 degrees, rearrange the spots of the bar, and then collimate the slow axis. This shaping method solves the problem of large focused spots.

[0003] However, there are some problems with the above two shaping methods: the laser chips are arranged too closely, and as the power of a single chip increases, heat dissipation becomes difficult; the optical path debugging of each link must be powered on to light up the bar, but some special semiconductor materials have strict requirements on the working and use environment. In the absence of suitable protective gas and a good dust-free environment, the exposed power-on bar will inevitably cause the bar optical power to decay or even fail. During fast-axis collimation, the distance between the fast-axis collimation lens and the chip is too short, most of which are within 100 microns, which can easily damage the chip end face during the debugging process, causing the chip to fail. Utility Model Content

[0004] In view of this, the utility model provides a beam shaping coupling device with multiple single-tube semiconductor laser diodes densely arranged, which is used to at least solve the above technical problems.

[0005] One aspect of an embodiment of the utility model provides a beam shaping coupling device with multiple single-tube semiconductor laser diodes densely arranged, comprising: a semiconductor array laser, configured to emit a first beam array, collimate the fast axis and the slow axis of the first beam array to obtain a second beam array, wherein the beams of the second beam array are arranged along the slow axis direction; a beam reflection and separation system, arranged on the optical path of the semiconductor array laser beam, configured to separate and arrange the second beam array, increase the distance between the beams of the second beam array, and improve the consistency of the pointing of each beam; a fast-slow axis conversion system, arranged on the optical path of the beam of the beam reflection and separation system, configured to separate and arrange the second beam array The fast and slow axes rotate 90 degrees; the confocal beam shrinking and expanding system is configured to simultaneously focus the fast-axis light spot and the slow-axis light spot of the separated and arranged second beam array, shape the focused fast-axis light spot into quasi-parallel light to achieve fast-axis beam shrinkage, and shape the axis light spot into parallel light to achieve slow-axis beam expansion, so as to obtain a third beam array; the beam reflection and combining system is arranged on the optical path of the light beam emitted by the confocal beam shrinking and expanding system, and is configured to arrange the third beam array closely, reduce the distance between the light beams in the third beam array, and improve the consistency of the pointing directions of the light beams; the focusing system is arranged on the optical path of the light beam emitted by the beam reflection and combining system, and is configured to focus the light spot of the closely arranged third beam array to the target size.

[0006] According to an embodiment of the present disclosure, a semiconductor array laser includes: at least two semiconductor laser diode single chips arranged along a slow axis direction, the semiconductor laser diode single chip being configured to emit a laser beam; a reflector disposed on an optical path of an outgoing light beam of the semiconductor laser diode single chip, being configured to change the direction of the laser beam to obtain a first beam array; an aspheric fast and slow axis collimation array being configured to collimate the fast axis and slow axis of the first beam array to obtain a second beam array; wherein at least two semiconductor laser diode single chips and the reflector are hermetically packaged to obtain a semiconductor array laser.

[0007] According to an embodiment of the present disclosure, the aspherical fast-slow axis collimation array includes: one of a spherical mirror lens array and an aspherical mirror lens array, and is configured to simultaneously collimate the fast axis and the slow axis of the first light beam array.

[0008] According to an embodiment of the present disclosure, an aspheric fast-slow axis collimation array is configured to collimate the fast axis and the slow axis of the first light beam array respectively; wherein the fast axis collimation adopts one of an aspheric cylindrical mirror, a cylindrical mirror, a cylindrical mirror group array, and an aspheric cylindrical mirror array; the slow axis collimation adopts one of a plurality of aspheric mirrors, a plurality of cylindrical mirrors, a cylindrical mirror array, and an aspheric cylindrical mirror array.

[0009] According to an embodiment of the present disclosure, the confocal beam shrinking and expanding system includes: a focusing lens, configured to simultaneously focus the fast-axis spot and the slow-axis spot of the second light beam array after separation and arrangement; a fast-axis collimator, arranged on the optical path of the light beam emitted from the focusing lens, configured to shape the focused fast-axis spot into quasi-parallel light to achieve fast-axis beam shrinkage; a slow-axis collimator, arranged on the optical path of the light beam emitted from the fast-axis collimator, configured to shape the axis spot into parallel light to achieve slow-axis beam expansion, thereby obtaining a third light beam array; wherein the focal length of the fast-axis collimator is smaller than the focal length of the slow-axis collimator.

[0010] According to an embodiment of the present disclosure, the focusing lens includes a spherical or aspherical mirror; the fast-axis collimating mirror includes a cylindrical mirror, a microlens cylindrical mirror array or an aspherical cylindrical mirror; the slow-axis collimating mirror includes a cylindrical mirror, a cylindrical microlens array or an aspherical cylindrical mirror.

[0011] According to an embodiment of the present disclosure, the fast-slow axis conversion system is arranged between the beam reflection and separation system and the confocal beam shrinking and expanding system; or, the fast-slow axis conversion system is arranged between the focusing lens and the fast-axis collimating lens; or, the fast-slow axis conversion system is arranged between the fast-axis collimating lens and the slow-axis collimating lens.

[0012] According to an embodiment of the present disclosure, the fast-slow axis conversion system includes one of a cylindrical mirror pair, an aspherical mirror pair, a stepped reflector pair, and a micro-sheet prism stack, and the cylindrical mirror pair and the aspherical mirror pair are tilted 45 degrees relative to the fast axis or the slow axis direction.

[0013] According to an embodiment of the present disclosure, the focusing system includes one of a single spherical mirror, an aspherical mirror, multiple spherical mirrors, a combined lens of aspherical mirrors, and a group of multiple cylindrical mirrors.

[0014] According to an embodiment of the present disclosure, it also includes: a polarization beam combining system, which is arranged between the semiconductor array laser and the focusing system, and is configured to perform polarization beam combining on a two-dimensional arrangement array consisting of two second beam arrays or two separately arranged second beam arrays or two third beam arrays or two closely arranged third beam arrays.

[0015] According to an embodiment of the present disclosure, it also includes: a reflective two-dimensional light beam arrangement system, which is arranged before the focusing system and is configured to make a two-dimensional arrangement of a plurality of closely arranged third light beam arrays, or to make a two-dimensional arrangement of a plurality of closely arranged and polarized third light beam arrays.

[0016] Another aspect of the embodiment of the utility model provides a beam shaping coupling device of multiple single-tube semiconductor laser diodes densely arranged, including: a semiconductor array laser, configured to emit a first beam array, collimate the fast axis and slow axis of the first beam array to obtain a second beam array, wherein the beams of the second beam array are arranged along the slow axis direction; a fast-slow axis conversion system, arranged on the optical path of the semiconductor array laser beam, the fast-slow axis conversion system is a stepped reflector pair, configured to separate and arrange the second beam array by arranging the relative positions of the stepped reflector pair, increase the distance between the beams of the second beam array, and improve the consistency of the pointing of each beam; rotate the fast and slow axes of the separated and arranged second beam array by 90 degrees , and rotate the direction of the second beam array 90 degrees; the confocal beam shrinking and expanding system is configured to simultaneously focus the fast-axis light spot and the slow-axis light spot of the separated and arranged second beam array, shape the focused fast-axis light spot into quasi-parallel light to achieve fast-axis beam shrinkage, and shape the slow-axis light spot into parallel light to achieve slow-axis beam expansion, so as to obtain a third beam array; the beam reflection and combining system is arranged on the optical path of the light beam emitted by the confocal beam shrinking and expanding system, and is configured to closely arrange the third beam array, reduce the distance between the light beams in the third beam array, and improve the consistency of the pointing of each light beam; the focusing system is arranged on the optical path of the light beam emitted by the beam reflection and combining system, and is configured to focus the light spot of the closely arranged third beam array to the target size.

[0017] The beam shaping coupling device with multiple single-tube semiconductor laser diodes densely arranged according to the embodiment of the utility model can at least achieve the following technical effects:

[0018] The system uses a confocal beam shrinking and expansion system to simultaneously focus the fast-axis spot and the slow-axis spot of the beam array, and then performs fast-axis beam shrinking and slow-axis beam expansion, so that the beam shrinking and beam expansion can share a focusing lens, thereby simplifying the system and reducing the difficulty and cost of manufacturing the coupling device.

[0019] The fast and slow axes are used for collimation, and the light spots of the beam array are arranged separately through the beam reflection separation system, which can facilitate the design of the subsequent optical system and the mounting of optical devices. Combined with the fast and slow axis conversion system, the confocal beam shrinking and expanding system and the beam reflection and combining system, the working distance between the collimation array and the semiconductor laser diode single chip can be increased, thereby avoiding damage to the chip during the installation and debugging of the beam shaping coupling device, reducing the difficulty of debugging, and thus being able to well realize beam shaping after the fast and slow axes are collimated at the same time.

[0020] The fast-slow axis conversion system can also use a pair of stepped reflectors. The second beam array can be separated and arranged directly by arranging the relative positions of the stepped reflectors. There is no need to set up an additional beam reflection separation system to arrange the light spots of the beam array separately, which further simplifies the system and reduces the manufacturing cost of the coupling device.

[0021] During the optical path debugging process of the beam shaping device, the semiconductor array laser is pre-packaged in an airtight package with protective gas, thus avoiding the problem of the bar bar being exposed and powered on without suitable protective gas and a good dust-free environment, resulting in the attenuation of the bar bar's optical power or even failure.

[0022] The semiconductor array laser is formed by airtight packaging of at least two semiconductor laser diode single chips and reflectors arranged along the slow axis direction, and then the lasers emitted by multiple semiconductor laser diode single chips are collimated in fast and slow axes based on the collimation system. Compared with the way that a single bar is arranged too closely, the heat dissipation effect is good, which solves the traditional heat dissipation problem. In addition, there is no need to set up a fast axis array, a slow axis collimation array, etc. for each light-emitting point in the overly dense bar, which can greatly reduce the precision of the collimation device, better control the material cost, and reduce the complexity and debugging difficulty of the beam shaping device.

[0023] After the fast and slow axes are aligned by a large focal length collimation system, the spot is shaped based on the fast and slow axis conversion system, the confocal beam shrinking and expanding system, and the beam reflection and combining system. Because the fast and slow axis collimation system has a large focal length, compared to directly accelerating the axis collimation lens in front of the bar, it can further increase the distance between the collimation system and the semiconductor array laser, avoiding damage to the chip during debugging, reducing the difficulty of debugging, improving production efficiency, improving product yield, improving product quality, and expanding the types of packaged materials. In addition, because the large focal length fast and slow axis collimation system can increase the distance between the collimation system and the semiconductor array laser, there is enough space for pre-airtight packaging of the semiconductor array laser, which further protects the chip compared to densely arranged bars. At the same time, it can also further reduce the complexity of debugging the beam shaping device.

[0024] The beam shaping effect is further guaranteed by rationally designing the specific components of the collimation system, beam reduction system, fast-slow axis conversion system and beam expansion system. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The above and other purposes, features and advantages of the present invention will become more apparent through the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:

[0026] Figure 1 The structure of a beam shaping coupling device with multiple single-tube semiconductor laser diodes densely arranged according to an embodiment of the utility model is schematically shown.

[0027] Figure 2 The structure of the aspheric fast and slow axis collimation array according to the embodiment of the utility model is schematically shown.

[0028] Figure 3 The diagram schematically shows the conversion principle of a cylindrical mirror pair and an aspherical mirror pair according to an embodiment of the utility model.

[0029] Figure 4 The conversion principle diagram of the step reflector and the micro-sheet prism stack according to the embodiment of the utility model is schematically shown. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical solution and advantages of the utility model more clear, the utility model is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the utility model, not all of them. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0031] Figure 1 The structure of a beam shaping coupling device with multiple single-tube semiconductor laser diodes densely arranged according to an embodiment of the utility model is schematically shown.

[0032] like Figure 1 As shown, a beam shaping coupling device with multiple single-tube semiconductor laser diodes densely arranged may include a semiconductor array laser A, a beam reflection and separation system B, a fast-slow axis conversion system C, a confocal beam shrinking and expanding system D, a beam reflection and combining system E, and a focusing system F.

[0033] The semiconductor array laser A is configured to emit a first beam array, collimate the fast axis and slow axis of the first beam array, and obtain a second beam array, wherein the beams of the second beam array are arranged along the slow axis direction.

[0034] The beam reflection and separation system B is arranged on the optical path of the semiconductor array laser A beam, and is configured to separate and arrange the second beam array, increase the distance between the beams of the second beam array, and improve the consistency of the pointing of each beam.

[0035] The fast-slow axis conversion system C is arranged on the optical path of the light beam emitted by the light beam reflection and separation system B, and is configured to rotate the fast-slow axis of the second light beam array after separation and arrangement by 90 degrees.

[0036] The confocal beam shrinking and expanding system D is configured to simultaneously focus the fast-axis spot and the slow-axis spot of the separated and arranged second beam array, shape the focused fast-axis spot into quasi-parallel light to achieve fast-axis beam shrinkage, and shape the slow-axis spot into parallel light to achieve slow-axis beam expansion, thereby obtaining a third beam array.

[0037] The beam reflection and combining system E is arranged on the optical path of the light beam emitted by the confocal beam shrinking and expanding system D, and is configured to arrange the third beam array closely, reduce the distance between the beams in the third beam array, and improve the consistency of the pointing directions of each beam.

[0038] The focusing system F is arranged on the optical path of the light beam emitted by the light beam reflection and combination system E, and is configured to focus the light spot of the tightly arranged third light beam array to a target size.

[0039] It should be understood that the beam reflection and separation system is to increase the distance between the beams, so the number of reflectors in the beam reflection and separation system will be different according to the requirements of different separation distances. The beam reflection and combination system is set between the confocal beam shrinking and expanding system and the focusing system, and is configured to arrange the third array tightly and improve the consistency of the pointing of each beam.

[0040] In some embodiments, the semiconductor array laser A may include a semiconductor laser diode single chip 1, a reflector (not shown in the figure), and an aspherical fast and slow axis collimation array 2. The number of semiconductor laser diode single chips 1 is at least two, at least two semiconductor laser diode single chips 1 are arranged along the slow axis direction, and the semiconductor laser diode single chip 1 is configured to emit a laser beam. The reflector is arranged on the optical path of the semiconductor laser diode single chip light beam, and is configured to change the direction of the laser beam to obtain a first beam array. The aspherical fast and slow axis collimation array 2 is configured to collimate the fast axis and slow axis of the first beam array to obtain a second beam array.

[0041] According to the embodiment of the present utility model, the aspheric fast and slow axis collimation array 2 adopts a large focal length collimation system.

[0042] In some embodiments, the aspheric fast and slow axis collimation array 2 is one of a spherical lens array and an aspheric lens array. The aspheric fast and slow axis collimation array 2 is configured to collimate the fast axis and the slow axis of the first beam array simultaneously.

[0043] Figure 2 The structure of the aspheric fast and slow axis collimation array according to the embodiment of the utility model is schematically shown.

[0044] like Figure 2 As shown, the aspheric fast and slow axis collimation array 2 in this embodiment includes at least two aspheric lenses, and the at least two aspheric lenses are formed into an aspheric mirror lens array by molding, and the aspheric mirror lens array is configured to simultaneously collimate the fast axis and slow axis of the first light beam array.

[0045] In some embodiments, the aspheric fast and slow axis collimation array 2 can also be configured to collimate the fast axis and slow axis of the first light beam array respectively. When the fast axis is collimated, the aspheric fast and slow axis collimation array 2 uses one of an aspheric cylindrical mirror, a cylindrical mirror, a cylindrical mirror array, and an aspheric cylindrical mirror array; when the slow axis is collimated, the aspheric fast and slow axis collimation array 2 uses one of a plurality of aspheric cylindrical mirrors, a plurality of cylindrical mirrors, a cylindrical mirror array, and an aspheric cylindrical mirror array.

[0046] In some embodiments, the confocal beam shrinking and expanding system D may include a focusing lens 5 , a fast-axis collimating lens 6 , and a slow-axis collimating lens 7 .

[0047] The focusing lens 5 is configured to simultaneously focus the fast-axis light spot and the slow-axis light spot of the separated and arranged second light beam array.

[0048] The fast axis collimator 6 is disposed on the optical path of the focusing lens light beam, and is configured to shape the focused fast axis light spot into a quasi-parallel light to achieve fast axis beam reduction.

[0049] The slow axis collimator 7 is arranged on the optical path of the fast axis collimator light beam, and is configured to shape the axial light spot into parallel light to achieve slow axis beam expansion, thereby obtaining a third light beam array.

[0050] The focal length of the fast axis collimator 6 is smaller than the focal length of the slow axis collimator 7. The system realizes the confocal beam shrinking and beam expanding functions at the same time.

[0051] Furthermore, the focusing lens 5 comprises a spherical or aspherical lens. The fast axis collimator 6 comprises a cylindrical lens, a micro-lens cylindrical lens array or an aspherical cylindrical lens, and the slow axis collimator cylindrical lens, a cylindrical micro-lens array or an aspherical cylindrical lens.

[0052] In one embodiment, the slow axis conversion system C can be arranged between the beam reflection and separation system B and the confocal beam shrinking and expanding system D. In another embodiment, the slow axis conversion system C can also be placed in the confocal beam shrinking and expanding system D, that is, the fast-slow axis conversion system C can be arranged between the focusing lens 5 and the fast-axis collimating lens 6, or the fast-slow axis conversion system C can be arranged between the fast-axis collimating lens 6 and the slow-axis collimating lens 7.

[0053] In one embodiment, the slow axis conversion system C can be arranged between the fast and slow axis collimation array 2 and the confocal beam shrinking and expanding system D to achieve fast and slow axis conversion and beam separation at the same time.

[0054] In some embodiments, the fast-slow axis conversion system C includes one of a cylindrical mirror pair, an aspherical mirror pair, a step mirror pair, and a micro-sheet prism stack. The cylindrical mirror pair and the aspherical mirror pair are tilted 45 degrees relative to the fast axis or the slow axis direction.

[0055] Figure 3The conversion principle diagram of the cylindrical mirror pair and the aspherical mirror pair according to the embodiment of the utility model is schematically shown.

[0056] like Figure 3 As shown, for example, before the separated and arranged second light beam array enters the cylindrical mirror pair or the aspherical mirror pair, the horizontal direction is the slow axis direction, and the vertical direction is the fast axis direction. After being processed by the cylindrical mirror pair or the aspherical mirror pair, the horizontal direction is the fast axis direction, and the vertical direction is the slow axis direction, that is, the fast and slow axes of the separated and arranged second light beam array are rotated 90 degrees.

[0057] Figure 4 The conversion principle diagram of the stepped reflector pair according to the embodiment of the utility model is schematically shown.

[0058] like Figure 4 As shown, for example, the step reflector pair can be a step structure composed of two upper and lower reflectors. Before the collimated second beam array or the separated and arranged second beam array enters the step reflector, the horizontal direction is the slow axis direction and the vertical direction is the fast axis direction. The second beam array is reflected by the reflector below the step reflector for the first time, and then reflected by the reflector above the step reflector for the second time, and the fast and slow axes of the separated and arranged second beam array are rotated by 90 degrees, so that the fast axis direction is along the horizontal direction and the slow axis direction is along the vertical direction, and the beam direction is rotated by 90 degrees.

[0059] In some embodiments, the focusing system F may include a single spherical mirror, an aspherical mirror, multiple spherical mirrors, a combination lens of aspherical mirrors, or a cylindrical mirror group, and the present invention is not limited thereto.

[0060] In some embodiments, the densely arranged beam shaping coupling device of multiple single-tube semiconductor laser diodes also includes: a polarization beam combining system, which is arranged between the semiconductor array laser A and the focusing system F, and is configured to perform polarization beam combining on a two-dimensional arrangement array consisting of two second beam arrays or two separately arranged second beam arrays or two third beam arrays or two closely arranged third beam arrays.

[0061] According to the polarization combining principle of laser, after the semiconductor array laser beam passes through the collimation system and before passing through the focusing system, two such beam arrays can be polarized combined based on the polarization combining system to combine the two beams into one beam. After combining, the energy density of the system can be improved and the application field of the system can be broadened.

[0062] In some embodiments, the beam shaping coupling device of multiple single-tube semiconductor laser diodes densely arranged also includes: a reflective two-dimensional beam arrangement system, which is arranged before the focusing system F and is configured to make a two-dimensional arrangement of multiple closely arranged third beam arrays, or to make a two-dimensional arrangement of multiple closely arranged and polarization-combined third beam arrays.

[0063] It should be understood that the beam shaping coupling device provided by the embodiment of the utility model realizes beam shaping based on the joint action of semiconductor array laser A, beam reflection separation system B, fast and slow axis conversion system C, confocal beam shrinking and expansion system D, beam reflection and combining system E and focusing system F. Regardless of whether the fast and slow axes are collimated simultaneously or separately, the joint action of the fast and slow axis conversion system, the confocal beam shrinking and expansion system, and the reflection and combining system can increase the working distance between the collimation system and the semiconductor array laser and achieve a suitable focusing angle and focal size. Moreover, compared with the independent beam expansion system and the beam shrinking system, the confocal beam shrinking and expansion system is simpler, simpler to manufacture, and lower in cost. If there is no confocal beam shrinking and expansion system to increase the working distance between the collimation system and the semiconductor array laser, when focusing, the focus of the slow axis spot will be too large, or the focusing angle will be too large. If it is used for direct processing, the processing is relatively rough, resulting in limited application scenarios. If it needs to be coupled into an optical fiber, only a large-diameter optical fiber can be used, which greatly reduces the applicable field of the beam shaping coupling device.

[0064] Another embodiment of the utility model also provides a beam shaping coupling device with multiple single-tube semiconductor laser diodes densely arranged, which may include a semiconductor array laser A, a fast-slow axis conversion system C, a confocal beam shrinking and expanding system D, a beam reflection and combining system E and a focusing system F.

[0065] The semiconductor array laser A is configured to emit a first beam array, collimate the fast axis and slow axis of the first beam array, and obtain a second beam array, wherein the beams of the second beam array are arranged along the slow axis direction.

[0066] The fast-slow axis conversion system C is arranged on the optical path of the light beam emitted by the semiconductor array laser A. The fast-slow axis conversion system C is a pair of stepped reflectors, which is configured to separate and arrange the second beam array by arranging the relative positions of the stepped reflectors, increase the distance between the beams of the second beam array, and improve the consistency of the pointing of each beam, rotate the fast-slow axis of each beam of the separated and arranged second beam array by 90 degrees, and rotate the direction of the second beam array by 90 degrees.

[0067] The confocal beam shrinking and expanding system D is configured to simultaneously focus the fast-axis spot and the slow-axis spot of the separated and arranged second beam array, shape the focused fast-axis spot into quasi-parallel light to achieve fast-axis beam shrinkage, and shape the axis spot into parallel light to achieve slow-axis beam expansion, thereby obtaining a third beam array.

[0068] The beam reflection and combining system E is arranged on the optical path of the light beam emitted by the confocal beam shrinking and expanding system D, and is configured to arrange the third beam array closely, reduce the distance between the beams in the third beam array, and improve the consistency of the pointing directions of each beam.

[0069] The focusing system F is arranged on the optical path of the light beam emitted by the light beam reflection and combination system E, and is configured to focus the light spot of the tightly arranged third light beam array to a target size.

[0070] It should be noted that the multiple single-tube semiconductor laser diodes densely arranged beam shaping coupling device in this embodiment is Figure 1 The difference of the multi-single-tube semiconductor laser diode densely arranged beam shaping coupling device shown is that the fast-slow axis conversion system in the multi-single-tube semiconductor laser diode densely arranged beam shaping coupling device of this embodiment is a stepped reflector, which simultaneously realizes fast-slow axis conversion and beam separation, and rotates the beam direction by 90 degrees. The beam reflection separation system can be omitted to simplify the system.

[0071] For other specific implementation details, please refer to the above Figure 1 The implementation details of the densely arranged beam shaping coupling device of multiple single-tube semiconductor laser diodes are not repeated here.

[0072] In summary, the densely arranged beam shaping coupling device of multiple single-tube semiconductor laser diodes provided in the embodiment of the utility model solves the heat dissipation problem, and solves the problem of the bar bar optical power attenuation or even failure caused by the exposed power-on lighting of the bar bar without suitable protective gas and a good dust-free environment, and the problem of easy damage to the chip during the debugging process, thereby achieving a simultaneous reduction in the size of the focused light spot and the focusing angle.

[0073] The terms used herein are only for describing specific embodiments and are not intended to limit the present invention. The terms "include", "comprises", etc. used herein indicate the existence of the features, steps, operations and / or components, but do not exclude the existence or addition of one or more other features, steps, operations or components.

[0074] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or can communicate with each other; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0075] In the description of the present invention, it should be understood that the terms "longitudinal", "length", "circumferential", "front", "rear", "left", "right", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the subsystem or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0076] Throughout the drawings, the same elements are represented by the same or similar reference numerals. Conventional structures or configurations will be omitted when they may cause confusion in the understanding of the present invention. The shapes, sizes, and positional relationships of the components in the drawings do not reflect the actual size, proportion, and actual positional relationship. In addition, in the present invention, any reference symbol between brackets should not be constructed as a limitation to the present invention.

[0077] Similarly, in order to simplify the present invention and help understand one or more of the various disclosed aspects, in the above description of the exemplary embodiments of the present invention, the various features of the present invention are sometimes grouped together into a single embodiment, figure or description thereof. The description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0078] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present utility model, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0079] The above is only a specific embodiment of the utility model, but the protection scope of the utility model is not limited to this. Any changes or substitutions made within the spirit and principle of the utility model should be included in the protection scope of the utility model. Therefore, the protection scope of the utility model should be based on the protection scope of the claims.

Claims

1. A beam shaping coupling device with densely arranged multiple single-tube semiconductor laser diodes, characterized in that: include: a semiconductor array laser configured to emit a first beam array, collimate a fast axis and a slow axis of the first beam array to obtain a second beam array, wherein the beams of the second beam array are arranged along the slow axis; a beam reflection and separation system, disposed on the optical path of the semiconductor array laser beam, configured to separate and arrange the second beam array, increase the distance between the beams of the second beam array, and improve the consistency of the pointing directions of the beams; A fast-slow axis conversion system is provided on the optical path of the light beam emitted by the light beam reflection and separation system, and is configured to rotate the fast-slow axis of the second light beam array after separation and arrangement by 90 degrees; a confocal beam shrinking and expanding system configured to simultaneously focus the fast-axis light spot and the slow-axis light spot of the separated and arranged second beam array, shape the focused fast-axis light spot into quasi-parallel light to achieve fast-axis beam shrinkage, and shape the slow-axis light spot into parallel light to achieve slow-axis beam expansion, thereby obtaining a third beam array; a beam reflection and combining system, disposed on an optical path of the light beams emitted by the confocal beam shrinking and expanding system, and configured to closely arrange the third beam array, reduce the distance between the beams in the third beam array, and improve the consistency of the pointing directions of the beams; The focusing system is arranged on the optical path of the light beam emitted by the light beam reflection and combination system, and is configured to focus the light spot of the tightly arranged third light beam array to a target size.

2. The beam shaping coupling device of multiple densely arranged single-tube semiconductor laser diodes according to claim 1, characterized in that: The semiconductor array laser comprises: at least two semiconductor laser diode single chips arranged along the slow axis direction, the semiconductor laser diode single chips being configured to emit a laser beam; A reflector is provided on an optical path of the light beam emitted by the semiconductor laser diode single chip and is configured to change the direction of the laser beam to obtain the first light beam array; an aspheric fast and slow axis collimation array, configured to collimate the fast axis and slow axis of the first beam array to obtain a second beam array; The at least two semiconductor laser diode single chips and the reflector are hermetically packaged to obtain the semiconductor array laser.

3. The beam shaping coupling device of multiple densely arranged single-tube semiconductor laser diodes according to claim 2, characterized in that: The aspheric fast-slow axis collimation array includes: a spherical mirror lens array or an aspheric mirror lens array, and is configured to simultaneously collimate the fast axis and the slow axis of the first light beam array.

4. The beam shaping coupling device of multiple densely arranged single-tube semiconductor laser diodes according to claim 2, characterized in that: The aspheric fast and slow axis collimation array is configured to collimate the fast axis and the slow axis of the first beam array respectively; Among them, the fast axis collimation adopts one of an aspheric cylindrical mirror, a cylindrical mirror, a cylindrical mirror array, and an aspheric cylindrical mirror array; the slow axis collimation adopts one of multiple aspheric mirrors, multiple cylindrical mirrors, a cylindrical mirror array, and an aspheric cylindrical mirror array.

5. The beam shaping and coupling device of multiple densely arranged single-tube semiconductor laser diodes according to claim 1, characterized in that: The confocal beam shrinking and expanding system comprises: a focusing lens configured to simultaneously focus the fast-axis light spot and the slow-axis light spot of the separated and arranged second light beam array; A fast axis collimator is provided on the optical path of the light beam emitted by the focusing lens and is configured to shape the focused fast axis light spot into a quasi-parallel light to achieve fast axis beam reduction; a slow-axis collimator, disposed on an optical path of the light beam emitted by the fast-axis collimator, and configured to shape the axial light spot into parallel light to achieve slow-axis beam expansion, thereby obtaining a third light beam array; Wherein, the focal length of the fast-axis collimator is smaller than the focal length of the slow-axis collimator.

6. The beam shaping and coupling device of multiple densely arranged single-tube semiconductor laser diodes according to claim 5, characterized in that: The focusing lens includes a spherical or aspherical lens; the fast axis collimating lens includes a cylindrical lens, a micro lens cylindrical lens array or an aspherical cylindrical lens; the slow axis collimating lens includes a cylindrical lens, a cylindrical micro lens array or an aspherical cylindrical lens.

7. The beam shaping and coupling device of multiple densely arranged single-tube semiconductor laser diodes according to claim 5, characterized in that: The fast-slow axis conversion system is arranged between the beam reflection and separation system and the confocal beam shrinking and expanding system; or, the fast-slow axis conversion system is arranged between the focusing lens and the fast-axis collimator; or, the fast-slow axis conversion system is arranged between the fast-axis collimator and the slow-axis collimator.

8. The beam shaping and coupling device of multiple densely arranged single-tube semiconductor laser diodes according to claim 1 or 7, characterized in that: The fast-slow axis conversion system includes one of a cylindrical mirror pair, an aspheric mirror pair, a stepped reflector pair, and a micro-prism stack. The cylindrical mirror pair and the aspheric mirror pair are tilted 45 degrees relative to the fast axis or the slow axis.

9. The beam shaping and coupling device of multiple densely arranged single-tube semiconductor laser diodes according to claim 1, characterized in that: The focusing system includes one of a single spherical mirror, an aspherical mirror, multiple spherical mirrors, a combined lens of aspherical mirrors, and a multiple cylindrical mirror group.

10. The beam shaping and coupling device of multiple densely arranged single-tube semiconductor laser diodes according to claim 1, characterized in that: Also includes: A polarization beam combining system is arranged between the semiconductor array laser and the focusing system, and is configured to perform polarization beam combining on a two-dimensional array consisting of two second beam arrays or two separately arranged second beam arrays or two third beam arrays or two closely arranged third beam arrays.

11. The beam shaping and coupling device of multiple densely arranged single-tube semiconductor laser diodes according to claim 1 or 10, characterized in that: Also includes: The reflective two-dimensional beam arrangement system is arranged before the focusing system and is configured to arrange in two dimensions a plurality of closely arranged third beam arrays, or to arrange in two dimensions a plurality of closely arranged and polarization-combined third beam arrays.

12. A beam shaping coupling device with multiple single-tube semiconductor laser diodes densely arranged, characterized in that: include: a semiconductor array laser configured to emit a first beam array, collimate a fast axis and a slow axis of the first beam array to obtain a second beam array, wherein the beams of the second beam array are arranged along the slow axis; a fast-slow axis conversion system disposed on an optical path of the semiconductor array laser beam, the fast-slow axis conversion system comprising a stepped reflector pair, configured to separate and arrange the second beam array by arranging the relative positions of the stepped reflector pair, thereby increasing the distance between the beams of the second beam array and improving the consistency of the pointing directions of the beams; rotating the fast-slow axis of each beam of the separated and arranged second beam array by 90 degrees, and rotating the direction of the second beam array by 90 degrees; a confocal beam shrinking and expanding system configured to simultaneously focus the fast-axis light spot and the slow-axis light spot of the separated and arranged second beam array, shape the focused fast-axis light spot into quasi-parallel light to achieve fast-axis beam shrinkage, and shape the slow-axis light spot into parallel light to achieve slow-axis beam expansion, thereby obtaining a third beam array; a beam reflection and combining system, disposed on an optical path of the light beams emitted by the confocal beam shrinking and expanding system, and configured to closely arrange the third beam array, reduce the distance between the beams in the third beam array, and improve the consistency of the pointing directions of the beams; The focusing system is arranged on the optical path of the light beam emitted by the light beam reflection and combination system, and is configured to focus the light spot of the tightly arranged third light beam array to a target size.

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