Passivated contact crystal silicon battery piece, photovoltaic module and photovoltaic system
By forming a double-layer or multi-layer tunnel structure in the metal contact area of the passivation contact crystalline silicon cell and reducing the polysilicon layer thickness and doping concentration in the non-metal contact area, the problems of current loss and metal recombination in the prior art are solved, and the effects of low metal recombination, low contact resistivity and high short circuit current are achieved.
Patent Information
- Application Number
- CN202420579815.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-25
- Publication Date
- 2025-03-25
- Estimated Expiration
- 2034-03-25
AI Technical Summary
The existing passivation contact crystalline silicon cell cells have parasitic absorption of light due to the doped polycrystalline silicon, which leads to current loss, and silver paste is corrosive and destructive to thinner doped polycrystalline silicon, resulting in increased metal recombination and large open pressure loss.
A double-layer or multi-layer tunnel structure is used to form a metal contact area, with a thicker polysilicon layer and a high doping concentration, and combined with an intermediate oxide layer to inhibit the longitudinal diffusion and corrosion of silver ions; in the non-metal contact area, the polysilicon layer is thinner and the doping concentration is low, forming a silicon nitride passivation contact layer to reduce the loss of free carrier absorption.
Low metal composite and low contact resistivity are achieved, which reduces the opening voltage loss and improves the battery's short circuit current and conversion efficiency.
Smart Images
Figure CN222674866U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of solar cells, and specifically relates to a passivated contact crystalline silicon cell sheet, and also relates to a photovoltaic component and a photovoltaic system. Background Art
[0002] At present, there are mainly two types of passivated contact crystalline silicon cells, one is the TOPCon cell structure, and the other is the HIT cell structure. Among them, for the TOPCon cell, its main core lies in the back tunneling oxide layer and the heavily phosphorus-doped polysilicon structure, which simultaneously achieves low surface recombination and low interface contact resistance.
[0003] However, due to the parasitic absorption of light by doped polysilicon, which leads to current loss, from the perspective of battery current, the lower the thickness of the doped polysilicon, the better. However, silver paste has more serious corrosion and destructive effects on thinner doped polysilicon, resulting in a significant increase in metal composite and a large opening voltage loss. Therefore, from the perspective of reducing parasitic absorption loss of light and reducing metal composite, the market urgently needs a passivated contact structure with a large polysilicon thickness in the contact area and a small thickness in the non-contact area, which is expected to achieve higher short-circuit current, higher open-circuit voltage, and higher battery conversion efficiency. Passivated contact crystalline silicon cell wafers. Utility Model Content
[0004] The technical problem to be solved by the utility model is to overcome the deficiencies of the prior art and provide an improved passivation contact crystalline silicon solar cell.
[0005] At the same time, the utility model also relates to a photovoltaic component and a photovoltaic system.
[0006] In order to solve the above technical problems, the technical solutions adopted by the utility model are as follows:
[0007] A passivated contact crystalline silicon cell comprises a silicon cell body, a tunneling silicon oxide layer and a polysilicon layer formed on the silicon cell body, and a metal electrode formed in a metal contact area. At least one tunnel structure layer is formed on the surface of the polysilicon layer corresponding to the metal contact area, and each tunnel structure layer comprises a tunneling oxide layer and a doping layer, wherein the thickness of the doping layer is greater than that of the polysilicon layer. The passivated contact crystalline silicon cell further comprises a passivation contact layer formed on the surface of the polysilicon layer in the non-metallic contact area and on the surface of the doping layer in the metal contact area.
[0008] In short, the metal contact area adopts a structure similar to a double-layer tunnel structure or a multi-layer tunnel structure, and the polysilicon thickness is thick and the doping concentration is high. Therefore, low metal recombination and low contact resistivity can be achieved at the same time. At the same time, the middle oxide layer of the double-layer tunnel structure or the multi-layer tunnel structure can inhibit the longitudinal diffusion and corrosion of silver ions, further reducing metal recombination. In addition, the polysilicon thickness of the non-metallic contact area is thin and the doping concentration is low. Therefore, while maintaining low surface recombination and reducing free carrier absorption losses, the short-circuit current of the battery can be further improved.
[0009] Preferably, the width of the tunnel oxide layer and the doping layer of each tunnel structure layer is equal. Further, the width of each metal contact area is equal to (or consistent with) the width of the tunnel structure layer, and each tunnel structure layer in each metal contact area is aligned and has the same thickness. This helps to ensure that the metal contact areas fall within the double-layer tunnel structure area during printing, ensuring high printing accuracy, thereby helping to achieve low metal composite and contact resistivity.
[0010] According to another specific implementation and preferred aspect of the utility model, the metal electrode is formed in the corresponding metal contact area, and the metal electrode burns through the passivation contact layer and is sintered in the doped layer; or, the metal electrode burns through the passivation contact layer, the doped layer, the tunnel oxide layer, and is sintered in the polysilicon layer. In short, different metal electrode sintering methods are used to better match the double-layer tunnel structure or the multi-layer tunnel structure. The sintering method needs to be optimized and adjusted according to the thickness of the inner and outer polysilicon layers of the double-layer tunnel structure to obtain the best contact and metal composite performance. If the outer polysilicon doped layer is thicker, the sintering temperature curve can be adjusted so that the metal electrode burns through the passivation contact layer and stays in the outer polysilicon doped layer, thereby achieving low metal composite and low contact resistivity; if the outer polysilicon doped layer is thinner, the sintering temperature curve can be adjusted so that the metal electrode burns through the passivation contact layer and stays in the inner polysilicon doped layer, thereby achieving low metal composite and low contact resistivity.
[0011] According to another specific implementation and preferred aspect of the present invention, the phosphorus doping concentration in the doping layer is greater than the phosphorus doping concentration in the polysilicon layer; further, the phosphorus doping concentration in the doping layer is 5 to 6*10 20 .cm 3 The phosphorus doping concentration in the polysilicon layer is 1 to 3*10 20 .cm 3 In short, different phosphorus doping concentrations can better achieve the performance of polysilicon in different structural areas. For non-contact areas, a suitable and relatively low doping concentration can reduce free carrier absorption losses while maintaining low surface recombination, further improving the short-circuit current of the battery; for contact areas, as high a doping concentration as possible helps reduce metal recombination and contact resistance.
[0012] Preferably, the tunneling oxide layer is a tunneling silicon oxide layer; and the doped layer is a polysilicon doped layer. In short, the oxide layer can inhibit the longitudinal diffusion and corrosion of silver ions, further reducing metal recombination; and the polysilicon doped layer can achieve low metal recombination and low contact resistivity at the same time due to its own thickness.
[0013] In some specific embodiments, the resistivity of the silicon wafer body is 0.5 to 3Ω.cm; the thickness of the silicon wafer body is 100 to 200μm; the silicon wafer body is an N-type single crystal silicon wafer; and the surface reflectivity of the silicon wafer body is 30 to 50%. In short, the silicon wafer is polished with an alkaline solution to remove the damaged layer on the surface of the silicon wafer and obtain a flat surface morphology. Specifically, the temperature of the alkaline solution is 50 to 80°C, the mass percentage of the alkaline substance in the solution is 0.5 to 2.5%, and the surface reflectivity of the silicon wafer after polishing is 30 to 50%. The flat tower base morphology on the surface of the silicon wafer reduces the surface area relative to the velvet surface, reduces the dangling bond density on the surface of the silicon wafer, and can achieve a lower interface state density. It also helps to achieve lower surface recombination by superimposing the tunnel structure.
[0014] Preferably, the thickness of the doped layer is 60-150 nm; the thickness of the polysilicon layer is 30-50 nm. Generally, a thickness of 60-100 nm is a thinner case; a thickness of 100-150 nm is a thicker case. In short, at this thickness, low metal composite and low contact resistivity can be achieved at the same time.
[0015] Preferably, the thickness of the tunneling silicon oxide layer is 1-2 nm. Methods for preparing the tunneling oxide layer include thermal oxidation, photo-ozone oxidation, ozone water oxidation, nitric acid oxidation, and plasma enhanced chemical vapor deposition (PECVD).
[0016] In addition, the passivation contact layer is a silicon nitride layer, and the refractive index of the silicon nitride layer is 1.9 to 2.3; and / or the thickness of the silicon nitride layer is 70 to 100 nm. According to the Fresnel principle, a transparent film layer with a certain thickness and a certain refractive index covering the surface can promote the destructive interference of reflected light, thereby reducing reflection. Adding a silicon nitride layer can reduce reflectivity, improve light absorption utilization, and provide a good surface passivation effect.
[0017] Another technical solution of the utility model is: a photovoltaic module, which includes a front plate, a front packaging layer, a battery cell, and a back packaging layer arranged in sequence from top to bottom, wherein the battery cell is the above-mentioned passivated contact crystalline silicon battery cell.
[0018] Another technical solution of the utility model is: a photovoltaic system, which includes the above-mentioned photovoltaic module, wherein there are one or more photovoltaic modules, and when there are multiple photovoltaic modules, the multiple photovoltaic modules are connected. In short, the multiple photovoltaic modules are connected (connected in series).
[0019] Due to the implementation of the above technical solution, the utility model has the following advantages compared with the prior art:
[0020] The existing passivated contact crystalline silicon cell has parasitic absorption of light by doped polysilicon, which leads to current loss. Therefore, from the perspective of battery current, the lower the thickness of the doped polysilicon, the better. However, silver paste has more serious corrosion and destructive effects on thinner doped polysilicon, resulting in a significant increase in metal composites, resulting in a large opening voltage loss and other deficiencies. The overall design of the passivated contact crystalline silicon cell of the utility model cleverly solves various deficiencies of the existing structure. The passivated contact crystalline silicon cell is adopted, and tunnel structure layers of different numbers are formed by the non-metallic contact area and the metal contact area of the silicon cell body, and the thickness of the polysilicon layer in the non-metallic contact area is less than the thickness of the doped layer in the metal contact area. At the same time, a passivation contact layer is formed on the polysilicon layers in the non-metallic contact area and the metal contact area, and then the metal electrode is sintered in the metal contact area. Therefore, on the one hand, the polysilicon thickness in the non-metallic contact area of the utility model is thinner, and the doping concentration is lower, so that the free carrier absorption loss is reduced while maintaining low surface recombination, and the short-circuit current of the battery can be further improved; on the other hand, the metal contact area adopts a tunnel structure layer, and the thickness of the doping layer is thicker and the doping concentration is higher, so low metal recombination and low contact resistivity can be achieved at the same time, and the intermediate oxide layer of the tunnel structure layer can inhibit the longitudinal diffusion and corrosion of silver ions, and further reduce metal recombination. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] Figure 1 It is a schematic diagram of the passivated contact crystalline silicon cell in Example 1;
[0022] Figure 2 It is a schematic diagram of the passivated contact crystalline silicon cell in Example 2;
[0023] Among them: 1. Silicon wafer body;
[0024] 2. Tunneling through the silicon oxide layer;
[0025] 3. Polysilicon layer;
[0026] 4. Metal electrode;
[0027] 5. Tunnel structure layer; 50. Tunnel oxide layer; 51. Doping layer;
[0028] 6. Passivate contact layer. DETAILED DESCRIPTION
[0029] In order to make the above-mentioned purposes, features and advantages of the utility model more obvious and easy to understand, the utility model is described in detail below in conjunction with the accompanying drawings and specific embodiments. In the following description, many specific details are set forth to facilitate a full understanding of the utility model. However, the utility model can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the utility model, so the utility model is not limited by the specific embodiments disclosed below.
[0030] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.
[0031] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present utility model, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.
[0032] In the present invention, unless otherwise clearly defined and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected, or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0033] In the utility model, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.
[0034] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and do not represent the only implementation method.
[0035] Example 1
[0036] like Figure 1 As shown, the passivated contact crystalline silicon cell provided in this embodiment includes a silicon wafer body 1, a tunneling silicon oxide layer 2 and a polysilicon layer 3 formed on the silicon wafer body 1, a metal electrode 4 forming a metal contact area, and a passivation contact layer 6.
[0037] The resistivity of the silicon wafer body 1 is 0.5 to 3Ω.cm; the thickness of the silicon wafer body is 100 to 200μm; the silicon wafer body 1 is an N-type single crystal silicon wafer; and the surface reflectivity of the silicon wafer body 1 is 30 to 50%. In short, the silicon wafer is polished with an alkaline solution to remove the damaged layer on the surface of the silicon wafer and obtain a flat surface morphology. Specifically, the temperature of the alkaline solution is 50 to 80°C, the mass percentage of the alkaline substance in the solution is 0.5 to 2.5%, and the surface reflectivity of the silicon wafer after polishing is 30 to 50%.
[0038] The thickness of the tunneling silicon oxide layer 2 is 1-2 nm. Methods for preparing the tunneling oxide layer include thermal oxidation, light ozone oxidation, ozone water oxidation, nitric acid oxidation, and PECVD.
[0039] At least one tunnel structure layer 5 is formed on the surface of the polysilicon layer 3 corresponding to the metal contact area, and each tunnel structure layer 5 includes a tunnel oxide layer 50 and a doping layer 51, wherein the thickness of the doping layer 51 is greater than the thickness of the polysilicon layer 3. In short, the metal contact area adopts a structure similar to a double-layer tunnel structure or a multi-layer tunnel structure, and the thickness of the polysilicon is relatively thick, that is, the doping concentration is relatively high, so low metal recombination and low contact resistivity can be achieved at the same time, and the middle oxide layer of the double-layer tunnel structure or the multi-layer tunnel structure can inhibit the longitudinal diffusion and corrosion of silver ions, further reducing metal recombination. In addition, the thickness of the polysilicon in the non-metal contact area is relatively thin, and the doping concentration is relatively low, so while maintaining low surface recombination and reducing free carrier absorption losses, the short-circuit current of the battery can be further improved.
[0040] In some specific embodiments, the tunnel oxide layer 50 and the doping layer 51 of the tunnel structure layer 5 are of equal width. The phosphorus doping concentration in the doping layer 51 is greater than the phosphorus doping concentration in the polysilicon layer 3. Further, the phosphorus doping concentration in the doping layer 51 is 5 to 6*1020 .cm 3 The phosphorus doping concentration in the polysilicon layer 3 is 1 to 3*10 20 .cm 3 , here, phosphorus doping concentrations are different to form polysilicon layers of different thicknesses.
[0041] The passivation contact layer 6 is formed on the surface of the polysilicon layer 3 in the non-metallic contact area and the surface of the doped layer 51 in the metal contact area, and the passivation contact layer 6 is a silicon nitride layer, and the refractive index of the silicon nitride layer is 1.9-2.3; the thickness of the silicon nitride layer 5 is 70-100nm. The metal electrode 4 is formed in the corresponding metal contact area, and the metal electrode 4 burns through the passivation contact layer 6 and is sintered in the doped layer 51, wherein the thickness of the doped layer 51 is 100-150nm, and the thickness of the polysilicon layer 3 is 30-50nm.
[0042] In addition, the width of each metal contact area is equal to the width of the tunnel structure layer. At the same time, the widths formed by the metal contact areas are relative and spaced apart. The same tunnel structure layer 5 is arranged one by one and aligned in each metal contact area, and the sintering method of the metal electrode 4 is also the same.
[0043] Example 2
[0044] like Figure 2 As shown, the structure of the passivated contact crystalline silicon cell provided in this embodiment is basically the same as that in Embodiment 1, and both include a silicon wafer body 1, a tunneling silicon oxide layer 2 and a polysilicon layer 3 formed on the silicon wafer body 1, a metal electrode 4 forming a metal contact area, and a passivation contact layer 6. At the same time, the specific differences are as follows:
[0045] The metal electrode 4 burns through the passivation contact layer 6, the doping layer 51, and the tunneling oxide layer 50, and is sintered in the polysilicon layer 3, wherein the thickness of the doping layer 51 is 60-100 nm, and the thickness of the polysilicon layer is 30-50 nm.
[0046] Example 3
[0047] The photovoltaic module involved in this embodiment includes a front panel, a front packaging layer, a battery cell, and a back packaging layer arranged in sequence from top to bottom, wherein the battery cell is the passivated contact crystalline silicon battery cell in the above-mentioned embodiment 1 or 2.
[0048] In some specific embodiments, the passivated contact crystalline silicon cell is made by the molding processes in Examples 1 and 2, respectively.
[0049] Example 4
[0050] The photovoltaic system involved in this embodiment includes the photovoltaic components involved in Embodiment 3, wherein there are two or three or more photovoltaic components, and the multiple photovoltaic components are interconnected (generally connected in series).
[0051] Meanwhile, there may be only one photovoltaic module, that is, a photovoltaic system consisting of a single photovoltaic module; or there may be two or three or more photovoltaic modules, and the multiple photovoltaic modules may be relatively connected in series and / or in parallel.
[0052] In summary, the passivated contact crystalline silicon cell is adopted, and tunnel structure layers of different numbers are formed by the non-metallic contact area and the metal contact area of the silicon wafer body, and the thickness of the polysilicon layer in the non-metallic contact area is less than the thickness of the doped layer in the metal contact area. At the same time, a passivation contact layer is formed on the polysilicon layers in the non-metallic contact area and the metal contact area, and then the metal electrode is sintered in the metal contact area. Therefore, on the one hand, the thickness of the polysilicon in the non-metallic contact area of the utility model is thinner, and the doping concentration is lower, so while maintaining low surface recombination and reducing free carrier absorption loss, the short-circuit current of the battery can be further improved; on the other hand, the metal contact area adopts a tunnel structure layer, and the thickness of the doping layer is thicker and the doping concentration is higher, so This can achieve low metal composite and low contact resistivity at the same time. At the same time, the middle oxide layer of the tunnel structure layer can inhibit the longitudinal diffusion and corrosion of silver ions, further reducing metal composite; thirdly, the widths of the tunnel oxide layer and the doping layer of each tunnel structure layer are equal, the width of each metal contact area is equal to (or consistent with) the width of the tunnel structure layer, and the tunnel structure layers in each metal contact area are aligned and have the same thickness, which is conducive to ensuring that the metal contact areas fall in the double-layer tunnel structure area during printing, ensuring high printing accuracy, thereby helping to achieve low metal composite and contact resistivity; fourthly, different metal electrode sintering methods are used to better match the double-layer tunnel structure or the multi-layer tunnel structure. The sintering method The formula needs to be optimized and adjusted according to the thickness of the inner and outer polysilicon layers of the double-layer tunnel structure in order to obtain the best contact and metal composite performance. If the outer polysilicon doping layer is thicker, the sintering temperature curve can be adjusted so that the metal electrode burns through the passivation contact layer and stays in the outer polysilicon doping layer, thereby achieving low metal composite and low contact resistivity; if the outer polysilicon doping layer is thinner, the sintering temperature curve can be adjusted so that the metal electrode burns through the passivation contact layer and stays in the inner polysilicon doping layer, thereby achieving low metal composite and low contact resistivity; fifthly, different phosphorus doping concentrations can better realize the polysilicon performance in different structural areas. For non-contact areas, a suitable and relatively low doping concentration can be used while maintaining While maintaining low surface recombination, free carrier absorption loss is reduced, further improving the short-circuit current of the battery; for the contact area, the highest possible doping concentration is conducive to reducing metal recombination and contact resistance; sixthly, the oxide layer can inhibit the longitudinal diffusion and corrosion of silver ions, further reducing metal recombination; the polysilicon doping layer is thicker, so it can achieve low metal recombination and low contact resistivity at the same time; seventhly, the flat tower base morphology on the surface of the silicon wafer reduces the surface area relative to the velvet surface, reduces the dangling bond density on the surface of the silicon wafer, and can achieve a lower interface state density, and also helps to achieve lower surface recombination by superimposing the tunnel structure; eighthly, in general, a thickness of 60 to 100 nm is considered thin;The thickness of 100-150nm is relatively thick. In short, at this thickness, low metal composite and low contact resistivity can be achieved simultaneously. In the ninth aspect, according to the Fresnel principle, a transparent film layer with a certain thickness and a certain refractive index covering the surface can promote the destructive interference of reflected light, thereby reducing reflection. Adding a silicon nitride layer can reduce reflectivity, improve the absorption and utilization rate of light, and provide a good surface passivation effect; in the tenth aspect, the front panel, front encapsulation layer, passivated contact crystalline silicon cell, and back encapsulation layer arranged from top to bottom constitute a photovoltaic module, and then multiple photovoltaic modules are connected to form a photovoltaic system with the best efficiency and effect. ;
[0053] The above detailed description of the utility model is intended to enable people familiar with the technology in this field to understand the content of the utility model and implement it. It is not intended to limit the protection scope of the utility model. All equivalent changes or modifications made according to the spirit of the utility model should be included in the protection scope of the utility model.
Claims
1. A passivated contact crystalline silicon cell, comprising a silicon wafer body (1), a tunneling silicon oxide layer (2) and a polysilicon layer (3) formed on the silicon wafer body (1), and a metal electrode (4) formed in a metal contact area, characterized in that: At least one tunnel structure layer (5) is formed on the surface of the polysilicon layer (3) corresponding to the metal contact area, each tunnel structure layer (5) comprises a tunneling oxide layer (50) and a doping layer (51), wherein the thickness of the doping layer (51) is greater than the thickness of the polysilicon layer (3), and the passivation contact crystalline silicon cell further comprises a passivation contact layer (6) formed on the surface of the polysilicon layer (3) in the non-metal contact area and on the surface of the doping layer (51) in the metal contact area.
2. The passivated contact crystalline silicon cell according to claim 1, characterized in that: The widths of the tunneling oxide layer (50) and the doping layer (51) of each tunnel structure layer (5) are equal.
3. The passivated contact crystalline silicon cell according to claim 1, characterized in that: The width of each metal contact region is consistent with the width of the tunnel structure layer (5), and the tunnel structure layers (5) in each metal contact region are aligned and have the same thickness.
4. The passivated contact crystalline silicon solar cell according to claim 1, 2 or 3, characterized in that: The metal electrode (4) is formed in the corresponding metal contact area, and the metal electrode (4) burns through the passivation contact layer (6) and is sintered in the doping layer (51); or, the metal electrode (4) burns through the passivation contact layer (6), the doping layer (51), the tunneling oxide layer (50), and is sintered in the polysilicon layer (3); and the tunneling oxide layer (50) is a tunneling silicon oxide layer; and the doping layer (51) is a polysilicon doping layer.
5. The passivated contact crystalline silicon cell according to claim 1, characterized in that: The resistivity of the silicon wafer body (1) is 0.5-3Ω.cm.
6. The passivated contact crystalline silicon cell according to claim 1, characterized in that: The thickness of the silicon wafer body (1) is 100-200 μm.
7. The passivated contact crystalline silicon cell according to claim 1, characterized in that: The silicon wafer body (1) is an N-type single crystal silicon wafer.
8. The passivated contact crystalline silicon cell according to claim 1, characterized in that: The surface reflectivity of the silicon wafer body (1) is 30-50%.
9. The passivated contact crystalline silicon cell according to claim 1, characterized in that: The thickness of the doped layer (51) is 60-150 nm; the thickness of the polysilicon layer (3) is 30-50 nm; and the thickness of the tunneling silicon oxide layer (2) is 1-2 nm.
10. The passivated contact crystalline silicon cell according to claim 1, characterized in that: The passivation contact layer (6) is a silicon nitride layer, and the refractive index of the silicon nitride layer is 1.9-2.
3.
11. The passivated contact crystalline silicon cell according to claim 10, characterized in that: The thickness of the silicon nitride layer is 70-100 nm.
12. A photovoltaic module, comprising a front plate, a front encapsulation layer, a battery cell, and a back encapsulation layer arranged in order from top to bottom, characterized in that: The cell is a passivated contact crystalline silicon cell according to any one of claims 1 to 11.
13. A photovoltaic system, characterized in that: The photovoltaic system comprises the photovoltaic assembly as claimed in claim 12, wherein there are one or more photovoltaic assemblies, and when there are multiple photovoltaic assemblies, the multiple photovoltaic assemblies are interconnected.