Elastic wave device and method for manufacturing the same
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- SANAN JAPAN TECH CORP
- Filing Date
- 2024-12-12
- Publication Date
- 2026-06-24
AI Technical Summary
【0011】 この発明にかかる弾性波デバイスによれば、パッド上の第2金属層とピラーとは、前記凹部に前記凸所を相補状に入り込ませ、かつ、この凹部に隣接した前記凸部を前記凹所に相補状に受け入れて、一体化されることから、ピラーのデバイスチップからの剥離は効果的に抑制される。 前記凹部と凸部は、第2金属層に形成されており、デバイスチップ自体に対するエッチングなどの加工は不要とされる。 また、この発明にかかる弾性波デバイスによれば、前記特性検査において、プローブピンによって前記第2金属層の一部を塑性変形させて前記凹部と前記凸部とを形成させることから、弾性波デバイスの製造プロセスにおける工数を増加させることなく、ピラーのデバイスチップからの剥離を効果的に抑制する構造を弾性波デバイスに対し付与することができる。
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Figure 2026103033000001_ABST
Abstract
Claims
1. A device chip having a functional surface composed of a piezoelectric material on one side, A first metal layer formed on the functional surface, comprising a circuit pattern including a plurality of resonators, a plurality of pads, inter-resonator wiring connecting the resonators, and external connection wiring connecting the resonators and the pads, In the area where the first metal layer is formed, a second metal layer is formed on the first metal layer and covers at least a portion of the inter-resonator wiring, the external connection wiring, and the pad, A support layer formed in a region other than the resonator formation region on the functional surface, A roof layer formed on the support layer and working in cooperation with the functional surface and the support layer to form a sealing space for the resonator, The pad comprises a pillar formed in a through hole that penetrates the support layer and the roof layer and positions the pad at the bottom of the hole, with the base of the pillar fixed to the second metal layer on the pad. An elastic wave device wherein the second metal layer on the pad has a recess and a protrusion adjacent to the recess, and the base of the pillar has a protrusion that complements the recess and fits into the recess, and a recess that complements the protrusion and receives the protrusion.
2. The recess has a first surface portion that is connected to the side surface of the convex portion, and a second surface portion that is on the side opposite to the first surface portion and forms the lowest part of the recess between it and the first surface portion, The elastic wave device according to claim 1, wherein the second surface is inclined such that the distance between the second surface and the surface of the second metal layer gradually increases as it approaches the bottom.
3. The elastic wave device according to claim 2, wherein the recess has a cross-sectional contour shape that is arc-shaped at any position on the imaginary line segment connecting the starting end of the second surface, located on the upper side of the inclination of the second surface, to the lowest part, and the recess has a cross-sectional contour shape that is perpendicular to the imaginary line segment connecting the starting end of the second surface, located on the upper side of the inclination of the second surface, to the lowest part.
4. The elastic wave device according to claim 1, wherein the convex portion is formed to have a top portion that protrudes in an overhang shape above the lowest part of the concave portion.
5. A method for manufacturing an elastic wave device according to any one of claims 1 to 4, The steps include forming the first metal layer in each region of the wafer that will become one of the device chips, For each of the aforementioned regions, the step of forming the second metal layer after forming the first metal layer, A method for manufacturing an elastic wave device, comprising the steps of: for each region, after the formation of the second metal layer, performing a characteristic inspection by bringing a probe pin into contact with the second metal layer on the pad, and plastically deforming a part of the second metal layer with the probe pin to form the recess and the convex portion.
6. The method for manufacturing an elastic wave device according to claim 5, wherein the plastic deformation is caused by pressing the tip of the probe pin against the surface of the second metal layer such that the central axis of the probe pin forms an acute angle between the surface and the central axis of the second metal layer.
Citation Information
Patent Citations
Elastic wave device
JP2012005033A